CN112897451B - Sensor packaging structure, manufacturing method thereof and electronic equipment - Google Patents
Sensor packaging structure, manufacturing method thereof and electronic equipment Download PDFInfo
- Publication number
- CN112897451B CN112897451B CN202110073187.8A CN202110073187A CN112897451B CN 112897451 B CN112897451 B CN 112897451B CN 202110073187 A CN202110073187 A CN 202110073187A CN 112897451 B CN112897451 B CN 112897451B
- Authority
- CN
- China
- Prior art keywords
- chip
- substrate
- asic chip
- sensor
- asic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 120
- 239000004033 plastic Substances 0.000 claims abstract description 68
- 239000002184 metal Substances 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 238000007789 sealing Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- 238000000465 moulding Methods 0.000 claims description 14
- 238000003466 welding Methods 0.000 claims description 10
- 238000012858 packaging process Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 abstract description 58
- 239000011241 protective layer Substances 0.000 abstract description 2
- 229910000679 solder Inorganic materials 0.000 description 11
- 239000000243 solution Substances 0.000 description 7
- 238000005476 soldering Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0064—Packages or encapsulation for protecting against electromagnetic or electrostatic interferences
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- General Health & Medical Sciences (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Pressure Sensors (AREA)
Abstract
The invention discloses a sensor packaging structure, a manufacturing method thereof and electronic equipment, wherein the sensor packaging structure comprises a cover cap, a substrate, a sensor chip, an ASIC chip and a plastic layer, wherein the substrate and the cover cap are enclosed to form a containing cavity; the sensor chip is arranged in the accommodating cavity; the ASIC chip is arranged in the accommodating cavity and is electrically connected with the substrate and the sensor chip; the plastic layer covers a portion of the surface of the ASIC chip facing away from the substrate. The sensor packaging structure of the technical scheme of the invention can improve the pollution of the protective layer in a dispensing mode to other chips and metal wires and improve the product yield.
Description
Technical Field
The present invention relates to the field of semiconductor devices, and in particular, to a sensor package structure, a method for manufacturing the sensor package structure, and an electronic device.
Background
As the size of semiconductor devices becomes smaller, the internal package space of the product is compressed, and the chip pitch within the package structure is also smaller. Meanwhile, since the shielding requirements for external corrosion and the like are higher and higher, a protective layer is required to be coated on the surface of the integrated circuit chip. At present, a dispensing mode is generally adopted to realize the coating of the chips, but the dispensing mode has the problems of easily polluting the chips beside and damaging metal connecting wires due to smaller chip spacing.
Disclosure of Invention
The invention mainly aims to provide a sensor packaging structure, which aims to solve the problem that the protection is easy to pollute by using a dispensing mode.
In order to achieve the above object, the sensor package structure according to the present invention includes:
a cover cap;
the base plate and the cover cap are enclosed to form a containing cavity;
the sensor chip is arranged in the accommodating cavity;
the ASIC chip is arranged in the accommodating cavity and is electrically connected with the substrate and the sensor chip; and
And the plastic sealing layer covers the surface of the part of the ASIC chip, which is away from the substrate.
In an alternative embodiment, the plastic sealing layer wraps a part of the ASIC chip away from the surface of the substrate and a part of the peripheral side surface of the ASIC chip, and the plastic sealing layer is located on a side of the ASIC chip away from the sensor chip.
In an alternative embodiment, the surface of the substrate facing the cover cap is provided with a mounting groove, the ASIC chip is arranged in the mounting groove, and the portion of the plastic sealing layer covering the ASIC chip is away from the surface of the substrate and fills the gap between the peripheral side surface of the portion of the ASIC chip and the corresponding side wall of the mounting groove.
In an alternative embodiment, the plastic layer also covers a part of the open outer edge of the mounting groove.
In an alternative embodiment, the projection area of the plastic sealing layer on the surface of the ASIC chip, which is away from the substrate, is S1, and the surface area of the ASIC chip, which is away from the substrate, is S2, where the ratio of S1/S2 ranges from 2/3 to 3/4; and/or the number of the groups of groups,
the thickness of the plastic layer on the surface of the ASIC chip facing away from the substrate ranges from 75 mu m to 100 mu m.
In an alternative embodiment, the sensor chip is a MEMS chip, the substrate is provided with an acoustic hole communicated with the accommodating cavity, the sensor chip covers the acoustic hole, a first pin is arranged at a position of the ASIC chip, which is not covered by the plastic sealing layer, and the MEMS chip is electrically connected with the first pin through a first metal wire.
In an alternative embodiment, a bonding pad is disposed on the surface of the substrate, the ASIC chip is electrically connected to the bonding pad through a second metal wire, and the molding layer encapsulates the second metal wire.
The invention also provides a manufacturing method of the sensor packaging structure, which comprises the following steps:
providing a substrate, a cover cap, a sensor chip and an ASIC chip;
attaching the sensor chip and the ASIC chip to the surface of the substrate at intervals;
electrically connecting the ASIC chip with the substrate, and covering one side of the ASIC chip, which is close to the sensor chip, by using a baffle plate;
using a plastic packaging process to carry out plastic packaging on the ASIC chip to form a plastic packaging layer which partially covers the surface of the ASIC chip, which is away from the substrate;
removing the baffle and electrically connecting the sensor chip to an uncovered portion of the ASIC chip;
and packaging the cover cap on the surface of the substrate to enclose to form a containing cavity, wherein the sensor chip, the ASIC chip and the plastic sealing layer are all positioned in the containing cavity.
In an alternative embodiment, a bonding pad is arranged on the surface of the substrate, a welding point is arranged on the surface of the sensor chip, and a first pin and a second pin are arranged on the surface of the ASIC chip;
the step of attaching the sensor chip and the ASIC chip to the surface of the substrate at intervals includes:
attaching the surface of the sensor chip, on which the welding point is not arranged, to the surface of the substrate, on which the welding point is arranged;
attaching the surface of the ASIC chip, on which the first pin and the second pin are not arranged, to the surface of the substrate, on which the bonding pad is arranged;
the step of electrically connecting the ASIC chip with the substrate and covering a side of the ASIC chip, which is close to the sensor chip, with a baffle plate includes:
connecting a second pin of the ASIC chip with the bonding pad through a second metal wire;
covering a second pin of the ASIC chip and the peripheral position of the second pin by using a baffle plate;
the step of removing the shutter and electrically connecting the sensor chip to the uncovered portion of the ASIC chip includes:
and connecting the first pin of the ASIC chip with the welding point through a first metal wire.
The invention further provides electronic equipment, which comprises a shell and a sensor packaging structure arranged in the shell, wherein the sensor packaging structure is the sensor packaging structure.
The sensor packaging structure comprises the substrate, the cover cap, the sensor chip and the ASIC chip, wherein the substrate and the cover cap are enclosed to form the accommodating cavity which can provide shielding space for the ASIC chip and the MEMS chip, so that external elements and signals are effectively prevented from affecting electric signals of the sensor packaging structure. Meanwhile, the plastic sealing layer is used for covering part of the surface of the ASIC chip, which is away from the substrate, so that an anti-corrosion protection effect is achieved, the existing method of coating the ASIC chip in a dispensing mode is replaced, the problem that the chips beside the ASIC chip are easy to pollute due to small chip spacing in the dispensing process can be effectively avoided, and therefore the reliability and the yield of the packaging structure are improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a longitudinal cross-sectional view of one embodiment of a sensor package of the present invention;
FIG. 2 is a cross-sectional view of the sensor package structure of FIG. 1;
FIG. 3 is a flow chart of a method of fabricating a sensor package according to the present invention;
fig. 4 to 7 are cross-sectional views of the sensor package structure of fig. 3 during the fabrication process.
Reference numerals illustrate:
reference numerals | Name of the name | Reference numerals | Name of the name |
100 | Sensor packaging structure | 71 | Substrate and method for manufacturing the same |
100a | Accommodating cavity | 711 | Through hole |
10 | Substrate board | 73 | Vibrating diaphragm assembly |
11 | Acoustic aperture | 731 | Welding point |
13 | Bonding pad | 81 | First metal wire |
15 | Mounting groove | 83 | Second metal wire |
30 | Cover cap | 90 | ASIC chip |
50 | Plastic seal layer | 91 | First pin |
70 | Sensor chip | 93 | Second pin |
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that all directional indicators (such as up, down, left, right, front, and rear … …) in the embodiments of the present invention are merely used to explain the relative positional relationship, movement, etc. between the components in a particular posture (as shown in the drawings), and if the particular posture is changed, the directional indicator is changed accordingly.
In the present invention, unless specifically stated and limited otherwise, the terms "connected," "affixed," and the like are to be construed broadly, and for example, "affixed" may be a fixed connection, a removable connection, or an integral body; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
Furthermore, descriptions such as those referred to as "first," "second," and the like, are provided for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implying an order of magnitude of the indicated technical features in the present disclosure. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present invention.
The invention provides a sensor package structure 100.
Referring to fig. 1 and 2, in an embodiment of the invention, a sensor package structure 100 includes a cover 30, a substrate 10, a sensor chip 70, an ASIC chip 90, and a plastic layer 50, wherein the substrate 10 and the cover 30 enclose a receiving cavity 100a;
the sensor chip 70 is disposed in the accommodating cavity 100a; the ASIC chip 90 is disposed in the accommodating cavity 100a and electrically connected to the substrate 10 and the sensor chip 70;
the plastic layer 50 covers a portion of the surface of the ASIC chip 90 facing away from the substrate 10.
In this embodiment, the sensor package structure 100 includes a cover 30 and a substrate 10, wherein the substrate 10 is a printed circuit board, that is, a PCB, and the substrate may be a silicon substrate or an epoxy resin substrate, a circuit for electrical connection is formed on a surface of the substrate, a signal lead-out pad 13 connected to the circuit is provided, and a solder mask layer, that is, a solder mask layer, is a green surface layer on the printed circuit board, and can prevent solder from overflowing and avoid causing a short circuit of the circuit; the circuit board can also be effectively dampproof and protect the performance of the circuit board. And an exposure opening is formed on the solder mask layer corresponding to the bonding pad 13 to expose the bonding pad 13 for externally connecting an electronic element.
The longitudinal section of the cover 30 is U-shaped, the cover 30 may be an integrally formed metal shell or a non-metal shell coated with a metal material, and one end of the cover 30 in the opening direction and the substrate 10 enclose a closed accommodating cavity 100a. It will be appreciated that the cover 30 and the substrate 10 may be connected by conductive paste or solder paste, and electrical connection between the two may be achieved, so as to form a conductive shielding cavity, and the bonding pad 13, the ASIC chip 90 and the sensor chip 70 are all located in the accommodating cavity 100a, so as to facilitate electrical connection. The two-by-two electrical connection may be performed by wire bonding, or may be performed by providing metal traces in the substrate 10. Meanwhile, the closed accommodating cavity 100a can prevent the interference of external electromagnetic waves, enhance the protection effect on the two chips and ensure the conversion performance of the sensor chip 70. Of course, the cover 30 and the substrate 10 may also be in communication with each other through other conductive materials.
The cross-sectional shape of the structure formed by enclosing the cover 30 and the substrate 10 may be square, circular, polygonal, etc., and is not limited herein. Meanwhile, in order to fix the substrate 10 and the applied product or system and transmit the electrical signal, the surface of the substrate 10 facing away from the accommodating cavity 100a may be provided with solder feet, and the solder feet may be soldered to the motherboard circuit of a specific product through SMT or other processes, and the number of specific solder feet may be 3 or 4, so as to improve the stability of structural connection and data transmission.
Here, the sensor chip 70 disposed in the accommodating cavity 100a may be an environmental sensor chip 70, such as an air pressure sensor chip 70, a humidity sensor chip 70, a temperature sensor chip 70, or the like, or may be an acoustic sensor chip 70, such as a microphone sensor chip 70, which is not limited herein, and is within the scope of the present invention. The plastic layer 50 covers a portion of the surface of the ASIC chip 90 facing away from the substrate 10, so that the ASIC chip 90 can be effectively shielded and protected without dispensing operation. The plastic layer 50 is specifically formed by a plastic sealing step in a conventional plastic sealing process, and the material of the plastic layer may be epoxy resin, and the part of the surface of the ASIC chip 90 facing away from the substrate 10 may be covered by a cover plate, so that the remaining part of the surface is convenient to be electrically connected with the sensor chip 70.
The sensor package structure 100 of the present invention includes the substrate 10, the cover 30, the sensor chip 70 and the ASIC chip 90, where the accommodating cavity 100a formed by enclosing the substrate 10 and the cover 30 can provide shielding space for the ASIC chip 90 and the MEMS chip, so as to effectively prevent external elements and signals from affecting the electrical signals thereof. Meanwhile, the plastic sealing layer 50 is used for covering part of the surface of the ASIC chip 90, which is away from the substrate 10, so that an anti-corrosion protection effect is achieved, the existing application of dispensing mode to cover the ASIC chip 90 is replaced, the problem that the chips beside the ASIC chip are polluted easily due to smaller chip spacing in the dispensing process can be effectively avoided, and therefore the reliability and yield of the packaging structure are improved.
In an alternative embodiment, the portion of the molding layer 50 that encapsulates the ASIC chip 90 faces away from the surface of the substrate 10 and a portion of the peripheral side of the ASIC chip 90, and the molding layer 50 is located on the side of the ASIC chip 90 that faces away from the sensor chip 70.
Here, the plastic layer 50 covers part of the surface of the integrated ASIC chip 90 facing away from the substrate 10, and also covers part of the peripheral side surface of the ASIC chip 90, so that the shielding effect is better, and the peripheral edge of the plastic layer 50 is connected with the surface of the substrate 10, and meanwhile, the function of fixing the ASIC chip 90 can be achieved, so that the structure is more stable. Of course, the molding layer 50 is located on the side of the ASIC chip 90 away from the sensor chip 70, for example, the ASIC chip 90 has a square structure, and the molding layer 50 covers three peripheral sides, but does not cover the peripheral side facing the sensor chip 70, so that the electrical connection between the sensor chip 70 and the ASIC chip 90 is not affected, and the molding process is also convenient.
With continued reference to fig. 1, in an alternative embodiment, a mounting groove 15 is formed in a surface of the substrate 10 facing the cover 30, the ASIC chip 90 is disposed in the mounting groove 15, and the portion of the molding layer 50 covering the ASIC chip 90 is away from the surface of the substrate 10 and fills a gap between a portion of the peripheral side surface of the ASIC chip 90 and a corresponding side wall of the mounting groove 15.
In this embodiment, in order to facilitate the plastic packaging process, a mounting groove 15 is formed on the surface of the substrate 10 facing the cover 30, where the opening size of the mounting groove 15 is larger than the size of the ASIC chip 90, so that it is convenient to attach the ASIC chip to the bottom wall of the mounting groove 15. At this time, the opening edge of one side of the mounting groove 15, which is close to the sensor chip 70, is covered, and at the same time, part of the ASIC chip 90 is covered against the surface of the substrate 10, and then the injection molding material is injected into the enclosed range, so that the plastic layer 50 fills the gap between the part of the peripheral side surface of the ASIC chip 90 and the side wall of the mounting groove 15, thereby increasing the mounting stability of the ASIC chip 90, and saving a baffle for blocking the overflow of the plastic material, and making the plastic package more convenient and faster.
In an alternative embodiment, the plastic layer 50 also covers a part of the open outer edge of the mounting groove 15.
In this embodiment, in order to further improve the structural stability, the plastic layer 50 also covers the outer edge of the partial opening of the mounting groove 15, where the edge is far away from the sensor chip 70 and corresponds to the peripheral side surface of the covered ASIC chip 90, so as to increase the connection area between the plastic layer 50 and the substrate 10, thereby making the overall structure stable and better.
In an alternative embodiment, the projected area of the plastic layer 50 on the surface of the ASIC chip 90 facing away from the substrate 10 is S1, and the surface area of the ASIC chip 90 facing away from the substrate 10 is S2, where the ratio of S1/S2 ranges from 2/3 to 3/4; and/or the number of the groups of groups,
the thickness of the plastic layer 50 on the surface of the ASIC chip 90 facing away from the substrate 10 ranges from 75 μm to 100 μm.
In this embodiment, in order to protect the ASIC chip 90 as much as possible, the area of the surface covered by the plastic layer 50 should not be too small, but the area of the surface covered by the plastic layer 50, which does not affect the electrical connection with the sensor chip 70, should not be too large in order to facilitate the implementation of the plastic packaging process, where the projection area of the plastic layer 50, which is the surface of the ASIC chip 90, which is away from the substrate 10, is set to be S1, the surface area of the ASIC chip 90, which is away from the substrate 10, is S2, and the ratio range of S1/S2 is equal to or greater than 2/3 and equal to or less than 3/4, so that the protection of the ASIC chip 90 can be improved to the greatest extent while the processing efficiency is ensured.
In an embodiment, the thickness of the plastic layer 50 on the surface of the ASIC chip 90 facing away from the substrate 10 is not too small, otherwise voids are easily generated, and of course, the thickness of the plastic layer 50 on the surface of the ASIC chip 90 facing away from the substrate 10 is not too large, which causes unnecessary waste. Here, the thickness of the molding layer 50 is set in the range of 75 μm to 100 μm, for example, 80 μm, 85 μm, 90 μm, etc., so that the ASIC chip 90 can be protected and also cost can be saved.
Referring to fig. 1 and 2, in an alternative embodiment, the sensor chip 70 is a MEMS chip, the substrate 10 is provided with an acoustic hole 11 communicating with the accommodating cavity 100a, the sensor chip 70 is disposed to cover the acoustic hole 11, a first pin 91 is disposed at a position of the ASIC chip 90 not covered by the molding layer 50, and the MEMS chip is electrically connected to the first pin 91 through a first metal wire 81.
In this embodiment, the sensor chip 70 is a MEMS chip, that is, a microphone chip, and in order to implement acoustic-electric conversion, the substrate 10 is provided with the acoustic holes 11 corresponding to the MEMS chip, so that the acoustic signals can flow in conveniently, and the MEMS chip is used for sensing and detecting the acoustic signals flowing in from the acoustic holes 11, and can convert the acoustic signals into electrical signals for transmission and transmit to the ASIC chip 90. The ASIC chip 90 is configured to provide a voltage to the MEMS chip and process and amplify a signal output by the MEMS chip, so that the sensor package structure 100 provides a sound receiving function for an electronic device. Of course, in other embodiments, the cover 30 may be provided with the corresponding sound hole 11.
Specifically, the MEMS chip includes a substrate 71 and a diaphragm assembly 73, wherein the substrate 71 is made of monocrystalline silicon, polycrystalline silicon or silicon nitride, and the substrate 71 has a substantially square external shape, and is connected to the substrate 10 by a glue. The substrate 71 is disposed around the periphery of the acoustic hole 11, and is provided with a through hole 711, and the through hole 711 is communicated with the acoustic hole 11 to form an acoustic cavity of the sensor package structure 100, so as to ensure smoothness of sound transmission. The cross-sectional shape of the through hole 711 is a circle, a square, a polygon, or the like, and the opening shape of the sound hole 11 may be a circle, so that the peripheral wall of the sound cavity is a smooth arc surface. The diaphragm assembly 73 may be of a piezoelectric type or a capacitive type, and is not limited thereto. For example, when the diaphragm assembly 73 has a piezoelectric structure, it includes a diaphragm and piezoelectric materials disposed on two sides of the diaphragm, and the diaphragm is excited by the sound signal to vibrate the diaphragm, so that the pressure of the piezoelectric materials changes, and a corresponding electrical signal is output.
Here, the MEMS chip is electrically connected to the ASIC chip 90, that is, the diaphragm assembly 73 is electrically connected to the ASIC chip 90, and the diaphragm assembly 73 is electrically connected to the first pin 91 of the ASIC chip 90 through the first metal wire 81, where the first metal wire 81 may be a gold wire or a copper wire, so as to effectively improve the performance of electrical connection. The first pins 91 are arranged on one side of the ASIC chip 90 adjacent to the MEMS chip and are not covered by the plastic sealing layer 50, the number of the first pins is two, two welding points 731 are correspondingly arranged on the MEMS chip, the two welding points 731 are respectively and electrically connected with the two first pins 91 through the two first metal wires 81, and even if one of the first pins fails, the electric connection can be ensured, so that the service performance of the sensor is ensured.
Referring to fig. 2, in an alternative embodiment, a pad 13 is disposed on a surface of the substrate 10, the ASIC chip 90 is electrically connected to the pad 13 through a second metal wire 83, and the molding layer 50 encapsulates the second metal wire 83.
The ASIC chip 90 is electrically connected to the substrate 10 through the second metal wire 83, and the second metal wire 83 is made of the same material as the first metal wire 81, and may be made of copper or gold, so that good conduction effect is achieved. The plurality of pads 13 of the substrate 10 are provided, and the corresponding ASIC chip 90 is provided with a plurality of second pins 93, and the plurality of pads 13 are provided in one-to-one correspondence with the plurality of second pins 93, and are electrically connected by the plurality of second metal wires 83, thereby realizing connection stability between the ASIC chip 90 and the substrate 10. Of course, in other embodiments, the ASIC chip 90 is fixed to the substrate 10 by soldering with solder balls.
Referring to fig. 3 to 7, the present invention further provides a method for manufacturing a sensor package structure 100, where the method for manufacturing the sensor package structure 100 includes the following steps:
step S10: providing a substrate 10, a cover 30, a sensor chip 70, and an ASIC chip 90;
step S20: attaching the sensor chip 70 and the ASIC chip 90 to the surface of the substrate 10 at intervals;
step S30: electrically connecting the ASIC chip 90 with the substrate 10, and covering a side of the ASIC chip 90 close to the sensor chip 70 with a shutter;
step S40: using a plastic packaging process to perform plastic packaging on the ASIC chip 90 to form a plastic packaging layer 50 which partially covers the surface of the ASIC chip 90 facing away from the substrate 10;
step S50: removing the shutter and electrically connecting the sensor chip 70 to the uncovered portion of the ASIC chip 90;
step S60: the cover 30 is encapsulated on the surface of the substrate 10 to form a housing cavity 100a, and the sensor chip 70, the ASIC chip 90 and the plastic layer 50 are all located in the housing cavity 100a.
Specifically, the ASIC chip 90 is first attached to the surface of the substrate 10 by means of gluing, thereby forming a stable fixing structure. Then, the ASIC chip 90 is electrically connected to the substrate 10, thereby realizing electrical connection. The surface of the ASIC chip 90, which is close to the sensor, is covered with a shielding plate, and the ASIC chip 90 is molded to form a molding layer 50 that partially covers the surface of the ASIC chip 90, which faces away from the substrate 10. Next, the shielding plate is removed, the sensor chip 70 is mounted on the surface of the substrate 10, and the sensor chip 70 is electrically connected to the ASIC chip 90, where the sensor chip 70 may be electrically connected through an uncovered portion of the ASIC chip 90. Finally, the cover 30 is encapsulated on the surface of the substrate 10 by gluing, so as to form an encapsulation structure with a containing cavity 100a, and the sensor chip 70, the ASIC chip 90 and the plastic layer 50 are all located in the containing cavity 100a.
It can be appreciated that the plastic sealing layer 50 is adopted to partially cover the ASIC chip 90 for protection, instead of the dispensing operation to cover the ASIC chip 90, so that the problem that the chips beside are easily polluted due to smaller chip spacing in the dispensing process is effectively avoided, and the reliability and yield of the sensor packaging structure 100 are improved.
It should be noted that, the substrate 10 may be further grooved, the ASIC chip 90 is disposed in the groove, and the plastic layer 50 not only covers the surface of the ASIC chip 90 facing away from the substrate 10, but also may cover a part of the peripheral side surface of the ASIC chip 90, that is, the plastic layer 50 is filled between the inner wall of the groove and a part of the peripheral side surface of the ASIC chip 90, so as to play a better role in shielding and protection. Of course, the covering of the plastic layer 50 on the surface of the ASIC chip 90 facing away from the substrate 10 may extend to the opening edge of the slot a distance to make the plastic package structure more stable.
In an alternative embodiment, the surface of the substrate 10 is provided with a bonding pad 13, the surface of the sensor chip 70 is provided with a soldering point 731, and a surface of the ASIC chip 90 is provided with a first pin 91 and a second pin 93 at intervals;
the step S20 of attaching the sensor chip 70 and the ASIC chip 90 to the surface of the substrate 10 at intervals includes:
s21: attaching the surface of the sensor chip 70, on which the soldering points 731 are not provided, to the surface of the substrate 10, on which the pads 13 are provided;
s22: attaching the surface of the ASIC chip 90, on which the first and second pins 91 and 93 are not provided, to the surface of the substrate 10, on which the pads 13 are provided;
the step S30 of electrically connecting the ASIC chip 90 with the substrate 10 and covering a side of the ASIC chip 90 near the sensor chip 70 with a shutter includes:
s31: connecting the first pin 91 of the ASIC chip 90 with the pad 13 through the second metal line 83;
s32: covering the second pins 93 of the ASIC chip 90 and the peripheral positions thereof with a shutter;
the step S50 of removing the shutter and electrically connecting the sensor chip 70 to the uncovered portion of the ASIC chip 90 includes:
s51: the second pin 93 of the ASIC chip 90 is connected to the solder joint 731 via the first metal line 81.
Specifically, the solder mask layer on the substrate 10 is provided with exposure holes, so that the bonding pads 13 to be connected are exposed, meanwhile, the surface of the sensor chip 70, on which the bonding pads 731 are not arranged, is attached to the surface of the substrate 10, on which the bonding pads 13 are arranged, and the surface of the ASIC chip 90, on which the first pins 91 are not arranged, is attached to the surface of the substrate 10, on which the bonding pads 13 are arranged, so that the electrical connection of the ASIC chip 90 is facilitated. Then, after the first pins 91 of the ASIC chip 90 are connected to the pads 13 through the second metal lines 83, the second pins 93 are covered with a shutter, and the peripheral positions of the second pins 93 are covered, so that the plastic layer 50 is prevented from being covered. During the plastic packaging process, the plastic packaging layer 50 can be extended towards the notch edge of the mounting groove 15 for a certain distance, so that the second metal wire 83 and the bonding pad 13 are coated together, and the connection stability of the ASIC chip 90 is further ensured. After the barrier is removed, the second pins 93 are exposed to be processed, so that the electrical connection of the ASIC chip 90 and the sensor chip 70 can be achieved by connecting the first metal wires 81 with the soldering points 731. Here, the sensor chip 70 is mounted and electrically connected after the plastic packaging, so that the plastic packaging layer 50 does not damage the first metal wire 81, and meanwhile, the sensor chip 70 is not affected, and the yield of the sensor packaging structure 100 is improved.
It should be noted that, the number of the second pins 93, the pads 13, and the second metal lines 83 may be plural, and the second pins 93 and the pads 13 are in one-to-one correspondence and are electrically connected through a second metal line 83. Similarly, the number of the second pins 93, the soldering points 731 and the first metal wires 81 may be plural, and the first pins 91 and the soldering points 731 are in one-to-one correspondence, and are electrically connected through a first metal wire 81, so as to ensure implementation of electrical connection.
The present invention further provides an electronic device (not shown) including a housing and a sensor package structure 100 disposed in the housing, where the specific structure of the sensor package structure 100 refers to the above embodiment, and since the sensor package structure 100 of the electronic device adopts all the technical solutions of all the embodiments, at least the beneficial effects brought by the technical solutions of the embodiments are provided, and will not be described in detail herein.
The electronic device may be a wearable electronic device, such as a smart watch or a bracelet, or a mobile terminal, such as a mobile phone or a notebook computer, or other devices that need to have an acoustic-electric conversion function, which is not limited herein.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the invention, and all equivalent structural changes made by the description of the present invention and the accompanying drawings or direct/indirect application in other related technical fields are included in the scope of the invention.
Claims (8)
1. A sensor package structure, comprising:
a cover cap;
the base plate and the cover cap are enclosed to form a containing cavity;
the sensor chip is arranged in the accommodating cavity;
the ASIC chip is arranged in the accommodating cavity and is electrically connected with the substrate and the sensor chip; and
A plastic layer covering a portion of the ASIC chip facing away from the surface of the substrate;
the surface of the substrate, which faces the cover cap, is provided with a mounting groove, the ASIC chip is arranged in the mounting groove, a part of the plastic layer, which covers the ASIC chip, is away from the surface of the substrate and fills a gap between a part of peripheral side surfaces of the ASIC chip and the side wall of the mounting groove corresponding to the peripheral side surfaces, and the part of peripheral side surfaces do not comprise a side surface close to the sensor chip;
the sensor chip is an MEMS chip, the substrate is provided with an acoustic hole communicated with the accommodating cavity, the sensor chip covers the acoustic hole, a first pin is arranged at a position, which is not covered by the plastic sealing layer, of the ASIC chip, and the MEMS chip is electrically connected with the first pin through a first metal wire.
2. The sensor package of claim 1, wherein the molding layer encapsulates a portion of the ASIC chip facing away from the surface of the substrate and a portion of the perimeter of the ASIC chip, and wherein the molding layer is located on a side of the ASIC chip facing away from the sensor chip.
3. The sensor package of claim 2, wherein the plastic layer also encapsulates a portion of the open outer edge of the mounting groove.
4. The sensor package structure of claim 2, wherein a projected area of the plastic layer on a surface of the ASIC chip facing away from the substrate is S1, and a surface area of the ASIC chip facing away from the substrate is S2, wherein a ratio of S1/S2 ranges from 2/3 to 3/4; and/or the number of the groups of groups,
the thickness of the plastic layer on the surface of the ASIC chip, which is far away from the substrate, ranges from 75 mu m to 100 mu m.
5. The sensor package according to any one of claims 1 to 4, wherein a surface of the substrate is provided with pads, the ASIC chip is electrically connected to the pads through second metal wires, and the molding layer encapsulates the second metal wires.
6. The manufacturing method of the sensor packaging structure is characterized by comprising the following steps of:
providing a substrate, a cover cap, a sensor chip and an ASIC chip;
digging a mounting groove on the substrate, arranging the ASIC chip in the mounting groove, and attaching the sensor chip on the surface of the substrate;
electrically connecting the ASIC chip with the substrate, and covering an opening edge of the mounting groove, which is close to the sensor chip, by using a baffle plate;
using a plastic packaging process to carry out plastic packaging on the ASIC chip to form a plastic packaging layer which partially covers the surface of the ASIC chip, which is away from the substrate; the plastic layer is also filled between the inner wall of the mounting groove and a part of the peripheral side surface of the ASIC chip, wherein the part of the peripheral side surface does not comprise a side surface close to the sensor chip;
removing the baffle and electrically connecting the sensor chip to an uncovered portion of the ASIC chip;
and packaging the cover cap on the surface of the substrate to enclose to form a containing cavity, wherein the sensor chip, the ASIC chip and the plastic sealing layer are all positioned in the containing cavity.
7. The method for manufacturing a sensor package structure according to claim 6, wherein a bonding pad is provided on a surface of the substrate, a bonding pad is provided on a surface of the sensor chip, and a first pin and a second pin are provided on a surface of the ASIC chip;
the step of attaching the sensor chip and the ASIC chip to the surface of the substrate at intervals includes:
attaching the surface of the sensor chip, on which the welding point is not arranged, to the surface of the substrate, on which the welding point is arranged;
attaching the surface of the ASIC chip, on which the first pin and the second pin are not arranged, to the surface of the substrate, on which the bonding pad is arranged;
the step of electrically connecting the ASIC chip with the substrate and covering a side of the ASIC chip, which is close to the sensor chip, with a baffle plate includes:
connecting a second pin of the ASIC chip with the bonding pad through a second metal wire;
covering a second pin of the ASIC chip and the peripheral position of the second pin by using a baffle plate;
the step of removing the shutter and electrically connecting the sensor chip to the uncovered portion of the ASIC chip includes:
and connecting the first pin of the ASIC chip with the welding point through a first metal wire.
8. An electronic device comprising a housing and a sensor package disposed within the housing, the sensor package being the sensor package of any one of claims 1 to 5.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110073187.8A CN112897451B (en) | 2021-01-19 | 2021-01-19 | Sensor packaging structure, manufacturing method thereof and electronic equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110073187.8A CN112897451B (en) | 2021-01-19 | 2021-01-19 | Sensor packaging structure, manufacturing method thereof and electronic equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112897451A CN112897451A (en) | 2021-06-04 |
CN112897451B true CN112897451B (en) | 2023-12-22 |
Family
ID=76116390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110073187.8A Active CN112897451B (en) | 2021-01-19 | 2021-01-19 | Sensor packaging structure, manufacturing method thereof and electronic equipment |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112897451B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113299569B (en) * | 2021-06-11 | 2022-11-22 | 广东佛智芯微电子技术研究有限公司 | Preparation method of large-board-level fan-out substrate flip chip packaging structure |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1941333A (en) * | 2005-09-30 | 2007-04-04 | 日月光半导体制造股份有限公司 | Chip packing structure |
JP2009164826A (en) * | 2007-12-28 | 2009-07-23 | Yamaha Corp | Silicon microphone package and mounting method of silicon microphone chip |
CN107567184A (en) * | 2016-07-02 | 2018-01-09 | 深圳市微航磁电技术有限公司 | The structure and method of electronic circuit are manufactured on the product of metal and plastic-injection |
CN111354684A (en) * | 2018-12-21 | 2020-06-30 | 深南电路股份有限公司 | Chip substrate and manufacturing method thereof, packaged chip and packaging method thereof |
CN111370335A (en) * | 2018-12-26 | 2020-07-03 | 中芯集成电路(宁波)有限公司 | Wafer level system packaging method |
CN111422819A (en) * | 2020-03-30 | 2020-07-17 | 歌尔微电子有限公司 | Sensor packaging structure, packaging method thereof and electronic equipment |
CN112054004A (en) * | 2019-06-06 | 2020-12-08 | 南昌欧菲光电技术有限公司 | Chip, substrate, chip packaging assembly, packaging method of chip packaging assembly and camera module |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9087828B2 (en) * | 2013-03-12 | 2015-07-21 | Alpha & Omega Semiconductor Incorporated | Semiconductor device with thick bottom metal and preparation method thereof |
DE102013225552A1 (en) * | 2013-12-11 | 2015-06-11 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
-
2021
- 2021-01-19 CN CN202110073187.8A patent/CN112897451B/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1941333A (en) * | 2005-09-30 | 2007-04-04 | 日月光半导体制造股份有限公司 | Chip packing structure |
JP2009164826A (en) * | 2007-12-28 | 2009-07-23 | Yamaha Corp | Silicon microphone package and mounting method of silicon microphone chip |
CN107567184A (en) * | 2016-07-02 | 2018-01-09 | 深圳市微航磁电技术有限公司 | The structure and method of electronic circuit are manufactured on the product of metal and plastic-injection |
CN111354684A (en) * | 2018-12-21 | 2020-06-30 | 深南电路股份有限公司 | Chip substrate and manufacturing method thereof, packaged chip and packaging method thereof |
CN111370335A (en) * | 2018-12-26 | 2020-07-03 | 中芯集成电路(宁波)有限公司 | Wafer level system packaging method |
CN112054004A (en) * | 2019-06-06 | 2020-12-08 | 南昌欧菲光电技术有限公司 | Chip, substrate, chip packaging assembly, packaging method of chip packaging assembly and camera module |
CN111422819A (en) * | 2020-03-30 | 2020-07-17 | 歌尔微电子有限公司 | Sensor packaging structure, packaging method thereof and electronic equipment |
Non-Patent Citations (1)
Title |
---|
姚玉等.《芯片先进制造》.暨南大学出版社,第14页. * |
Also Published As
Publication number | Publication date |
---|---|
CN112897451A (en) | 2021-06-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7261596B2 (en) | Shielded semiconductor device | |
US8314485B2 (en) | Electronic component | |
US9613877B2 (en) | Semiconductor packages and methods for forming semiconductor package | |
CN110677793B (en) | Microphone packaging structure | |
JP2012253190A (en) | Semiconductor package and assembling method of the same | |
JPH11289024A (en) | Semiconductor device and manufacture thereof | |
US9209101B2 (en) | Semiconductor package with a conductive shielding member | |
US10654709B1 (en) | Shielded semiconductor device and lead frame therefor | |
CN213186551U (en) | Packaging structure and electronic equipment of MEMS microphone | |
JPWO2016092633A1 (en) | Semiconductor package | |
CN111422819A (en) | Sensor packaging structure, packaging method thereof and electronic equipment | |
US8274797B2 (en) | Electronic component | |
CN112897451B (en) | Sensor packaging structure, manufacturing method thereof and electronic equipment | |
CN211929484U (en) | Packaging structure and electronic equipment | |
US11049817B2 (en) | Semiconductor device with integral EMI shield | |
JPH10284873A (en) | Semiconductor integrated circuit device and ic card, and lead frame used for manufacturing the device | |
CN114339560B (en) | Miniature microphone and electronic equipment | |
JP4859016B2 (en) | Semiconductor package | |
CN112911490B (en) | Sensor packaging structure, manufacturing method thereof and electronic equipment | |
CN213186550U (en) | Microphone module and electronic equipment | |
CN213661584U (en) | Surface acoustic wave filter chip packaging structure | |
CN211504517U (en) | Combined sensor and electronic device | |
JP6494723B2 (en) | Semiconductor package | |
CN112954559A (en) | Microphone structure and electronic equipment | |
CN215326927U (en) | MEMS sensor and packaging structure thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |