CN112889220B - 使用具有反馈的有源预驱动器的GaN驱动器 - Google Patents

使用具有反馈的有源预驱动器的GaN驱动器 Download PDF

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Publication number
CN112889220B
CN112889220B CN201980068471.7A CN201980068471A CN112889220B CN 112889220 B CN112889220 B CN 112889220B CN 201980068471 A CN201980068471 A CN 201980068471A CN 112889220 B CN112889220 B CN 112889220B
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CN
China
Prior art keywords
driver
transistor
voltage
gate
supply voltage
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CN201980068471.7A
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English (en)
Chinese (zh)
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CN112889220A (zh
Inventor
李剑锋
R·阿南思
M·查普曼
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Efficient Power Conversion Corp
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Efficient Power Conversion Corp
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Publication of CN112889220A publication Critical patent/CN112889220A/zh
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches

Landscapes

  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Amplifiers (AREA)
CN201980068471.7A 2018-08-28 2019-08-28 使用具有反馈的有源预驱动器的GaN驱动器 Active CN112889220B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862723801P 2018-08-28 2018-08-28
US62/723,801 2018-08-28
PCT/US2019/048600 WO2020047119A1 (en) 2018-08-28 2019-08-28 Gan driver using active pre-driver with feedback

Publications (2)

Publication Number Publication Date
CN112889220A CN112889220A (zh) 2021-06-01
CN112889220B true CN112889220B (zh) 2024-08-23

Family

ID=69640268

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980068471.7A Active CN112889220B (zh) 2018-08-28 2019-08-28 使用具有反馈的有源预驱动器的GaN驱动器

Country Status (7)

Country Link
US (1) US11038503B2 (enExample)
EP (1) EP3844874A4 (enExample)
JP (1) JP7499255B2 (enExample)
KR (1) KR102508184B1 (enExample)
CN (1) CN112889220B (enExample)
TW (1) TWI716980B (enExample)
WO (1) WO2020047119A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7275984B2 (ja) * 2019-08-09 2023-05-18 オムロン株式会社 駆動回路
WO2023107917A1 (en) * 2021-12-10 2023-06-15 Efficient Power Conversion Corporation Pre-driven bootstrapping drivers
JP7668252B2 (ja) * 2022-09-08 2025-04-24 株式会社京三製作所 高周波電源装置
TWI876726B (zh) 2023-12-01 2025-03-11 立積電子股份有限公司 邏輯電路和包含邏輯電路的前端模組
CN121444344A (zh) * 2024-05-30 2026-01-30 长江存储科技有限责任公司 驱动电路、使用驱动电路的存储器装置以及存储器系统

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4965464A (en) * 1988-10-14 1990-10-23 Siemens Aktiengesellschaft Power amplifier circuit for integrated digital circuits

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US4414502A (en) 1981-07-20 1983-11-08 Advanced Micro Devices, Inc. Current source circuit
US5272432A (en) * 1991-05-01 1993-12-21 Winbond Electronics N.A. Corporation DAC current source with stabilizing bias
US5796276A (en) * 1994-12-30 1998-08-18 Sgs-Thomson Microelectronics, Inc. High-side-driver gate drive circuit
KR100205233B1 (ko) 1996-06-14 1999-07-01 김탁중 게이트 구동회로
JP4935294B2 (ja) 2006-10-18 2012-05-23 富士電機株式会社 絶縁ゲート型デバイスの駆動回路
US7639081B2 (en) * 2007-02-06 2009-12-29 Texas Instuments Incorporated Biasing scheme for low-voltage MOS cascode current mirrors
CN101816119B (zh) 2007-10-02 2013-04-03 三菱电机株式会社 栅极驱动电路
WO2009063535A1 (ja) * 2007-11-16 2009-05-22 Fujitsu Limited バイアス回路、及びバイアス回路に対する制御方法
US7969226B2 (en) * 2009-05-07 2011-06-28 Semisouth Laboratories, Inc. High temperature gate drivers for wide bandgap semiconductor power JFETs and integrated circuits including the same
US8253479B2 (en) * 2009-11-19 2012-08-28 Freescale Semiconductor, Inc. Output driver circuits for voltage regulators
EP2426820B1 (en) * 2010-09-07 2013-09-04 Dialog Semiconductor GmbH Circuit controlling HS-NMOS power switches with slew-rate limitation
US8742803B2 (en) * 2012-09-26 2014-06-03 Broadcom Corporation Output driver using low voltage transistors
JP6286899B2 (ja) 2013-07-03 2018-03-07 富士電機株式会社 絶縁ゲート型半導体素子の駆動装置および電力変換装置
US9537338B2 (en) * 2014-09-16 2017-01-03 Navitas Semiconductor Inc. Level shift and inverter circuits for GaN devices
US9874893B2 (en) * 2015-05-27 2018-01-23 Analog Devices, Inc. Self-biased multiple cascode current mirror circuit
US9722599B1 (en) * 2016-01-28 2017-08-01 Infineon Technologies Austria Ag Driver for the high side switch of the cascode switch
TWI641218B (zh) * 2016-05-25 2018-11-11 高效電源轉換公司 增強模式fet閘極驅動器ic

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4965464A (en) * 1988-10-14 1990-10-23 Siemens Aktiengesellschaft Power amplifier circuit for integrated digital circuits

Also Published As

Publication number Publication date
TW202023195A (zh) 2020-06-16
KR20210072762A (ko) 2021-06-17
US11038503B2 (en) 2021-06-15
WO2020047119A1 (en) 2020-03-05
CN112889220A (zh) 2021-06-01
EP3844874A4 (en) 2022-05-25
JP7499255B2 (ja) 2024-06-13
EP3844874A1 (en) 2021-07-07
US20200076426A1 (en) 2020-03-05
JP2021535702A (ja) 2021-12-16
KR102508184B1 (ko) 2023-03-09
TWI716980B (zh) 2021-01-21

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