CN112865058A - High-voltage peak bleeder circuit - Google Patents
High-voltage peak bleeder circuit Download PDFInfo
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- CN112865058A CN112865058A CN202110389288.6A CN202110389288A CN112865058A CN 112865058 A CN112865058 A CN 112865058A CN 202110389288 A CN202110389288 A CN 202110389288A CN 112865058 A CN112865058 A CN 112865058A
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- 238000001514 detection method Methods 0.000 claims abstract description 52
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 22
- 230000015556 catabolic process Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 8
- 230000005669 field effect Effects 0.000 abstract description 7
- 238000007599 discharging Methods 0.000 description 9
- 230000000740 bleeding effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
Abstract
The invention provides a high-voltage peak discharge circuit, which comprises a voltage stabilizing module, a peak voltage detection module, a discharge MOS protection module and a peak voltage discharge MOS tube module, wherein the peak voltage detection module is used for detecting the peak voltage of a high-voltage peak; the peak voltage detection module comprises a PMOS tube and two resistors; the bleeder MOS protection circuit comprises N (N >0) NMOS tubes; the peak voltage discharge MOS tube module comprises an NMOS tube. The invention solves the problems of low discharge speed and large voltage value after peak voltage discharge caused by the low discharge speed when the input voltage generates high voltage peak through the detection of the input voltage and the control of the discharge MOS tube, and improves the reliability of the circuit. The PMOS tube used by the peak voltage detection module is the PM1 field effect tube carried by the process, so that the plate making level is reduced, and the production cost is reduced.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a high-voltage peak bleeder circuit.
Background
In production life, the input voltage of the electronic equipment has the maximum value allowed by the input voltage. If the input voltage exceeds the maximum voltage allowed by the equipment, the equipment is easily damaged or overvoltage protection is triggered, but the input voltage of the electronic equipment is usually not stable and constant, and transient high-voltage spikes are caused by the conditions that the input loop responds untimely, the switch is opened and closed to generate jitter and the like. The voltage spike may cause the subsequent stage electronic device to restart or stop working, resulting in an abnormality of the subsequent stage power utilization system.
Generally, the method for suppressing the peak voltage is to bleed off the generated high voltage peak or adjust the oscillation parameter of the oscillation by using a bleeding circuit. The conventional bleeder circuit has an RC bleeder circuit and an RCD bleeder circuit. Both of these bleeder circuits use a bleeder resistor to absorb the energy of the spike. The traditional bleeder circuit has the advantages of low bleeder speed, large peak voltage value after bleeder and higher cost.
Disclosure of Invention
Aiming at the defects in the prior art, the embodiment of the invention aims to provide a high-voltage peak bleeder circuit, and by detecting input voltage and controlling a bleeder MOS (metal oxide semiconductor) tube, the problems of slow bleeder speed and large voltage value after peak voltage bleeder when the input voltage generates a high-voltage peak are solved, the reliability of the circuit is improved, and a PMOS (P-channel metal oxide semiconductor) tube used by a middle-peak voltage detection module is a PM1 field effect tube carried by a process, so that the platemaking level is reduced, and the production cost is reduced.
In order to achieve the purpose, the invention provides the following technical scheme:
a high-voltage peak discharge circuit comprises a circuit scheme including four parts, namely a voltage stabilizing module, a peak voltage detection module, a discharge MOS protection module and a peak voltage discharge MOS tube module;
a voltage stabilizing module: the input end of the power supply voltage input end is connected with the power supply voltage input end; the output end output voltage VA is connected with the peak voltage detection module; spike voltage detection module: the input end input voltage VA is connected with the voltage stabilizing module; the output voltage VB of the first output end of the power supply is connected with the peak voltage bleeder MOS tube module; the output voltage VC of the second output end of the voltage regulating circuit is connected with a bleeder MOS protection module; the bleeder MOS protection module: the input end input voltage VC of the voltage detection module is connected with the peak voltage detection module; the output voltage VD of the output end of the MOS transistor module is connected with a peak voltage relief MOS transistor module; peak voltage bleeder MOS pipe module: the input voltage VB of the first input end is connected with the peak voltage detection module; the input voltage VD of the second input end is connected with the bleeder MOS protection module; the output voltage VREG of the output end of the high-voltage power supply circuit is the stable voltage finally output by the high-voltage power supply circuit, the problem that an internal circuit is burnt due to the fact that a traditional bleeder circuit is low in bleeder speed and large in voltage value after peak voltage is bleeder is solved, and the reliability of the circuit is improved.
In the invention, the voltage stabilizing module stabilizes the input power supply voltage to the working voltage of the post-stage equipment, so that the peak voltage acting on the internal peak voltage detection module, the discharge MOS protection module and the peak voltage discharge MOS tube module is small.
As a further aspect of the present invention, the spike voltage detection module includes a PMOS transistor PM1 and two resistors R1, R2.
As a further aspect of the present invention, the spike voltage detection module implements spike voltage detection through the on-voltage of the PMOS transistor PM 1.
As a further scheme of the invention, the bleeder MOS protection module comprises N (N >0) NMOS tubes, and gate oxide of the spike voltage bleeder MOS tube is protected from breakdown through superposition of breakover voltages of the N (N >0) NMOS tubes.
As a further aspect of the present invention, the peak voltage bleeder MOS transistor module includes a bleeder NMOS transistor NM 4.
The invention solves the problems of low discharge speed and large voltage value after peak voltage discharge caused by the low discharge speed when the input voltage generates high voltage peak through the detection of the input voltage and the control of the discharge MOS tube, and improves the reliability of the circuit. The PMOS tube used by the peak voltage detection module is a PM1 field effect tube carried by the process, so that the plate making level is reduced, and the production cost is reduced; compared with the traditional bleeder resistor, the bleeder resistor has higher bleeder speed and smaller voltage peak value after bleeder; the problem of burning out an internal circuit caused by a large voltage value after discharge is effectively avoided, and the reliability of the circuit is improved. The PMOS tube used by the peak voltage detection module is the PM1 field effect tube carried by the process, so that the plate making level is reduced, and the production cost is reduced.
To more clearly illustrate the structural features and effects of the present invention, the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
Description of the drawings:
FIG. 1 is a schematic block diagram of a specific embodiment of the present invention.
Fig. 2 is a schematic circuit structure diagram according to an embodiment of the invention.
The specific implementation mode is as follows:
the invention will be described more fully and clearly in connection with the accompanying drawings and the accompanying knowledge, and it is to be understood that the circuit diagrams described are merely exemplary embodiments of the invention, and are not intended to represent all exemplary embodiments.
Referring to fig. 1-2, a high-voltage peak bleeder circuit includes a voltage regulator module 1, a peak voltage detection module 2, a bleeder MOS protection module 3, and a peak voltage bleeder MOS transistor module 4; the peak voltage detection module comprises a PMOS tube and two resistors; the bleeder MOS protection circuit 3 comprises N (N >0) NMOS tubes; the peak voltage discharge MOS tube module 4 comprises an NMOS tube; the invention solves the problems of low discharge speed and large voltage value after peak voltage discharge caused by the low discharge speed when the input voltage generates high voltage peak through the detection of the input voltage and the control of the discharge MOS tube, and improves the reliability of the circuit. The PMOS tube used by the peak voltage detection module is the PM1 field effect tube carried by the process, so that the plate making level is reduced, and the production cost is reduced.
The input end of the voltage stabilizing module 1 is connected with the power supply voltage input end; the output end output voltage VA of the peak voltage detection module is connected with the peak voltage detection module 2, the input end input voltage VA of the peak voltage detection module is connected with the voltage stabilization module 1, the first output end output voltage VB of the peak voltage detection module is connected with the peak voltage discharge MOS tube module 4, and the second output end output voltage VC of the peak voltage detection module is connected with the discharge MOS protection module 3. And the input end of the discharge MOS protection module 3 is connected with the peak voltage detection module 2 through VC, and the output end of the discharge MOS protection module is connected with the peak voltage discharge MOS tube module 4 through VD. The peak voltage discharge MOS tube module 4 is characterized in that the input voltage VB of a first input end of the peak voltage discharge MOS tube module 4 is connected with the peak voltage detection module 2, and the input voltage VD of a second input end of the peak voltage discharge MOS tube module is connected with the discharge MOS protection module 3; the output voltage VREG of the output end of the voltage stabilizing circuit is the final output stable voltage of the voltage stabilizing circuit.
Preferably, the input high voltage range of the high voltage spike discharging circuit provided by the invention is 3.0V-4.0V, and the output voltage of the high voltage spike discharging circuit is 5.5V.
Voltage stabilizing module 1 stabilizes the input supply voltage to 5.5V, makes the spike voltage that is used in inside spike voltage detection module 2, the MOS protection module 3 that releases and spike voltage MOS transistor module 4 that releases little, and can work in the voltage range of broad.
The spike voltage detection module 2 includes: a PMOS pipe PM1 and two resistors R1 and R2. The spike voltage detection module 2 detects a spike voltage through the conduction voltage of the PMOS transistor PM 1. When the output voltage VA of the voltage stabilizing module 1 is lower than the PM1 turn-on voltage, the PM1 included in the spike voltage detection module 2 is turned off, and the bleeding MOS protection module 3 and the spike voltage bleeding MOS transistor module 4 do not work. When the output voltage VA of the voltage stabilizing module is higher than the PM1 turn-on voltage, the spike voltage detection module includes PM1 turn-off, and the bleeding MOS protection module 3 and the spike voltage bleeding MOS transistor module 4 start to operate to perform spike voltage bleeding.
The bleeder MOS protection module 3 includes N (N >0) NMOS transistors. The discharging MOS protection module 3 protects the gate oxide of the peak voltage discharging MOS transistor from being broken down by the superposition of the N NMOS transistor turn-on voltages, and the peak voltage discharging MOS transistor module 4 includes a discharging NMOS transistor NM 4.
Compared with the traditional discharge resistor, the peak voltage discharge MOS tube module 4 is introduced, so that the discharge speed is higher, and the peak value of the discharged voltage is smaller; the problem of burning out an internal circuit caused by a large voltage value after discharge is effectively avoided, and the reliability of the circuit is improved. The PMOS tube used by the peak voltage detection module is the PM1 field effect tube carried by the process, so that the plate making level is reduced, and the production cost is reduced.
The following provides a specific embodiment of the present invention
Example 1
Referring to fig. 1, a high-voltage peak bleeder circuit includes a voltage regulator module 1, a peak voltage detection module 2, a bleeder MOS protection module 3, and a peak voltage bleeder MOS transistor module 4;
the input end of the voltage stabilizing module 1 is connected with the power supply voltage input end, and the output end of the voltage stabilizing module VA is connected with the peak voltage detection module 2.
The peak voltage detection module 2 has an input end input voltage VA connected with the voltage stabilizing module 1, a first output end output voltage VB connected with the peak voltage discharge MOS tube module 4, and a second output end output voltage VC connected with the discharge MOS protection module 3.
And the input end of the discharge MOS protection module 3 is connected with the peak voltage detection module 2 through VC, and the output end of the discharge MOS protection module is connected with the peak voltage discharge MOS tube module 4 through VD.
The peak voltage bleeder MOS tube module 4 has a first input end input voltage VB connected with the peak voltage detection module 2, a second input end input voltage VD connected with the bleeder MOS protection module 3, and an output end output voltage VREG which is the final output stable voltage of the invention.
Referring to fig. 2, in the present embodiment, the input high voltage range of the high voltage spike discharging circuit is 3.0V to 4.0V, and the output voltage of the circuit is 5.5V.
In this embodiment, the voltage stabilizing module 1 stabilizes the input power supply voltage to 5.5V, so that the peak voltage acting on the internal peak voltage detecting module 2, the discharging MOS protection module 3, and the peak voltage discharging MOS transistor module 4 is small, and the voltage stabilizing module can work in a wide voltage range.
The spike voltage detection module 2 includes: a PMOS pipe PM1 and two resistors R1 and R2. The spike voltage detection module 2 detects a spike voltage through the conduction voltage of the PMOS transistor PM 1. The PM1 turn-on voltage is 7.5V in this embodiment.
In the present embodiment, the bleeder MOS protection module 3 includes 3 NMOS transistors NM1, NM2, NM 3. The bleeder MOS protection module 3 stabilizes the gate-source voltage of the NM4 by the superposition of the conduction voltages of the 3 NMOS transistors, and protects the gate oxide of the peak voltage bleeder MOS transistor NM4 from being broken down. The gate-source voltage of the protection NM4 in this embodiment is less than 5V.
The peak voltage bleeder MOS transistor module 4 includes a bleeder NMOS transistor NM 4.
When the voltage stabilizing module 1 works normally, the output voltage of the voltage stabilizing module 1 is stable, the PMOS tube PM1 in the peak voltage detection module 2 is turned off, and the NM1, the NM2, the NM3 and the NM4 are all in the off state; at this time, the spike voltage detection module 2, the relief MOS protection module 3, and the spike voltage relief MOS transistor module 4 are all in a non-operating state. When the output voltage of the voltage stabilizing module 1 generates a peak voltage which is larger than the conduction voltage 7.5V of PM1, PM1 is conducted and works in a saturation region. NM1, NM2 and NM3 are all turned on, and the gate-source voltage of NM4 is protected to be less than 5V. The NM4 is saturated and conducted, and absorbs the peak high voltage output by the voltage stabilizing module. The device can work normally when the post-stage device works in a normal voltage range.
According to the invention, through the detection of the input voltage and the control of the discharge MOS tube, the problems of low discharge speed and burning of an internal circuit caused by large voltage value after the peak voltage is discharged when the input voltage generates a high-voltage peak are solved, the reliability of the circuit is improved, and specifically, compared with the traditional discharge resistor, the discharge speed is higher and the peak value of the discharged voltage is smaller by introducing the peak voltage discharge MOS tube module 4; the problem of burning out an internal circuit caused by a large voltage value after discharge is effectively avoided, and the reliability of the circuit is improved. The PMOS tube used by the peak voltage detection module is the PM1 field effect tube carried by the process, so that the plate making level is reduced, and the production cost is reduced.
The technical principle of the present invention has been described above with reference to specific embodiments, which are merely preferred embodiments of the present invention. The protection scope of the present invention is not limited to the above embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. Other embodiments of the invention will occur to those skilled in the art without the exercise of inventive faculty, and such will fall within the scope of the invention.
Claims (6)
1. A high voltage spike bleed circuit, comprising:
the input end of the voltage stabilizing module is connected with the power supply voltage input end, and the output end of the voltage stabilizing module is connected with the peak voltage detection module;
the peak voltage detection module is connected with the peak voltage discharge MOS tube module through a first output end output voltage VB and a discharge MOS protection module through a second output end output voltage VC;
the output voltage VD of the output end of the discharge MOS protection module is connected with the peak voltage discharge MOS tube module;
and the output voltage of the output end of the peak voltage relief MOS tube module is VREG.
2. The high-voltage spike bleeder circuit according to claim 1, wherein said spike voltage detection module comprises a PMOS transistor PM1 and resistors R1, R2.
3. The high-voltage spike bleeder circuit of claim 2 wherein said spike voltage detection module implements spike voltage detection by the turn-on voltage of the PMOS transistor PM 1.
4. The high-voltage spike bleeder circuit of claim 1 wherein the bleeder MOS protection module comprises N NMOS transistors, wherein N is a natural number greater than 0.
5. The high-voltage spike leakage circuit of claim 4 wherein the leakage MOS protection module protects the gate oxide of the spike voltage leakage MOS transistor from breakdown by a superposition of N NMOS transistor turn-on voltages.
6. The high voltage spike leakage circuit of claim 5 wherein said spike voltage leakage MOS transistor module includes a leakage NMOS transistor NM 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110389288.6A CN112865058A (en) | 2021-04-12 | 2021-04-12 | High-voltage peak bleeder circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110389288.6A CN112865058A (en) | 2021-04-12 | 2021-04-12 | High-voltage peak bleeder circuit |
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| Publication Number | Publication Date |
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| CN112865058A true CN112865058A (en) | 2021-05-28 |
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| CN202110389288.6A Pending CN112865058A (en) | 2021-04-12 | 2021-04-12 | High-voltage peak bleeder circuit |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1438706A (en) * | 2002-02-14 | 2003-08-27 | 株式会社日立制作所 | Electrostatic releasing protection circuit |
| CN101707196A (en) * | 2009-05-15 | 2010-05-12 | 彩优微电子(昆山)有限公司 | Improved electrostatic discharge protective device, corresponding method and integrated circuit |
| CN103311913A (en) * | 2012-03-12 | 2013-09-18 | 上海华虹Nec电子有限公司 | Electrostatic protection trigger circuit |
| CN103840443A (en) * | 2012-11-20 | 2014-06-04 | 无锡华润上华半导体有限公司 | Power-supply protection circuit and chip thereof |
| CN107453342A (en) * | 2017-05-19 | 2017-12-08 | 上海北京大学微电子研究院 | A kind of ESD power clamps circuit and IC chip |
| CN107946297A (en) * | 2017-11-16 | 2018-04-20 | 长江存储科技有限责任公司 | ESD protection circuit, IC chip and electronic equipment |
| CN108512207A (en) * | 2018-04-18 | 2018-09-07 | 矽力杰半导体技术(杭州)有限公司 | Electrostatic discharge protective circuit |
| CN110994574A (en) * | 2019-10-15 | 2020-04-10 | 珠海亿智电子科技有限公司 | High-voltage-resistant power supply clamping circuit |
| CN212627155U (en) * | 2020-07-23 | 2021-02-26 | 华域视觉科技(上海)有限公司 | Surge interference protection circuit and vehicle LED drive power supply |
-
2021
- 2021-04-12 CN CN202110389288.6A patent/CN112865058A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1438706A (en) * | 2002-02-14 | 2003-08-27 | 株式会社日立制作所 | Electrostatic releasing protection circuit |
| CN101707196A (en) * | 2009-05-15 | 2010-05-12 | 彩优微电子(昆山)有限公司 | Improved electrostatic discharge protective device, corresponding method and integrated circuit |
| CN103311913A (en) * | 2012-03-12 | 2013-09-18 | 上海华虹Nec电子有限公司 | Electrostatic protection trigger circuit |
| CN103840443A (en) * | 2012-11-20 | 2014-06-04 | 无锡华润上华半导体有限公司 | Power-supply protection circuit and chip thereof |
| CN107453342A (en) * | 2017-05-19 | 2017-12-08 | 上海北京大学微电子研究院 | A kind of ESD power clamps circuit and IC chip |
| CN107946297A (en) * | 2017-11-16 | 2018-04-20 | 长江存储科技有限责任公司 | ESD protection circuit, IC chip and electronic equipment |
| CN108512207A (en) * | 2018-04-18 | 2018-09-07 | 矽力杰半导体技术(杭州)有限公司 | Electrostatic discharge protective circuit |
| CN110994574A (en) * | 2019-10-15 | 2020-04-10 | 珠海亿智电子科技有限公司 | High-voltage-resistant power supply clamping circuit |
| CN212627155U (en) * | 2020-07-23 | 2021-02-26 | 华域视觉科技(上海)有限公司 | Surge interference protection circuit and vehicle LED drive power supply |
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