CN108512207A - Electrostatic discharge protective circuit - Google Patents
Electrostatic discharge protective circuit Download PDFInfo
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- CN108512207A CN108512207A CN201810346902.9A CN201810346902A CN108512207A CN 108512207 A CN108512207 A CN 108512207A CN 201810346902 A CN201810346902 A CN 201810346902A CN 108512207 A CN108512207 A CN 108512207A
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/041—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage using a short-circuiting device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
- H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
A kind of electrostatic discharge protective circuit is disclosed, including：Vent unit is connected with signal end, and vent unit carries out energy to signal end according to trigger signal and releases；Trigger element, for providing the trigger signal；Wherein, the trigger element includes the first transistor, conducting is to provide starting current under parasitic capacitance coupling of the first transistor between its first end and control terminal, the first end of the first transistor is connected with the signal end, when the first transistor is connected, the trigger element provides the trigger signal according to the starting current.The mask layer being arranged for high-voltage capacitance can be omitted when carrying out device design, to reduce mask quantity, the design cost of circuit is created a further reduction, improves the design efficiency of circuit.
Description
Technical field
The present invention relates to integrated circuit fields, relate more specifically to a kind of electrostatic discharge protective circuit.
Background technology
Static discharge (Electro-Static Discharge, ESD) phenomenon refers to the electricity between chip and exterior object
Lotus discharges and transfer phenomena.ESD event can discharge a large amount of charges when occurring in the short time, be born far above chip to generate
The energy of ability, it is thus possible to lead to the function temporarily failure even permanent damages of chip.In chip manufacturing proces, it can adopt
Reduce the damage of ESD event with anti-electrostatic wrist ring or antistatic clothing.After chip manufacturing completion, due to the use environment of chip
Difference is big, is easy to that ESD event occurs between chip and exterior object so that chip is influenced by static discharge.Therefore, lead to
Electrostatic discharge protective circuit is often set in the chips to provide Electro-static Driven Comb path so that chip itself has the function of electrostatic protection,
To improve the reliability and service life of chip.
Modern electronic product (such as smart mobile phone, laptop, tablet computer and light-emitting diode display etc.) usually wraps
Containing the high-speed data port on printed circuit board (Printed Circuit Board, PCB), such as HDMI, USB,
DVI etc., these high-speed data ports widely use electrostatic discharge protective circuit to realize protection.Electrostatic discharge protective circuit can be designed as point
Vertical device, can also be directly integrated in chip interior.Fig. 1 shows the schematic diagram of the electrostatic discharge protective circuit of the prior art, when ESD arteries and veins
When being flushed to next, transistor N1 is triggered using resistance R1 and capacitance C1, after transistor N1 is connected, current flowing resistance R2 is then touched
Send out transistor N2, most ESD energy of finally releasing using transistor N2.In order to esd pulse of effectively releasing, lead to
Often need RC time constants being designed as 10ns-10ms, therefore capacitance C1 needs to be set as high-voltage capacitance, that is to say, that into
When row device designs, need with individual mask layer formation capacitance C1, to substantially increase the cost of design, reduce chip and set
Count efficiency.
Invention content
In view of this, the purpose of the present invention is to provide a kind of electrostatic discharge protective circuit, setting for circuit is created a further reduction
Meter cost, the design efficiency for improving circuit.
According to a kind of electrostatic discharge protective circuit provided by the invention, including：Vent unit is connected with signal end, described to release
Unit carries out energy to the signal end according to trigger signal and releases；Trigger element, for providing the trigger signal；Wherein,
The trigger element includes the first transistor, parasitic capacitance coupling of the first transistor between its first end and control terminal
To provide starting current, the first end of the first transistor is connected the lower conducting of effect with the signal end, when first crystalline substance
When body pipe is connected, the trigger element provides the trigger signal according to the starting current.
Preferably, the trigger element further includes first resistor, and the first resistor is connected to the first transistor
Between second end and control terminal.
Preferably, the trigger element further includes：1st to N grade of trigger circuit, the 1st grade of trigger circuit is according to the startup
Electric current generates the 1st grade of output current, and the 2nd to the N grade of trigger circuit is respectively according to the 1st to N-1 grade of the output current
The the 2nd to N grade of the output current is generated, N is non-zero natural number；And conversion circuit, according to N grades of the output current
Generate the trigger signal.
Preferably, at least output of the trigger circuit described in level-one for amplifying the starting current or upper level trigger circuit
Electric current.
Preferably, every grade of trigger circuit includes：Input terminal receives the starting current or the corresponding output electricity
Stream；Output end provides the output current of this grade；Second transistor, control terminal are connected with the input terminal, first end and institute
It states signal end to be connected, second end is connected with the output end；And second resistance, it is connected to the input terminal and the output end
Between.
Preferably, the conversion circuit includes 3rd resistor, the first end of the 3rd resistor and described N grades triggering electricity
The output end on road is connected to provide the trigger signal, and second end, which receives, refers to ground voltage.
Preferably, the vent unit includes third transistor, the first end of the third transistor and the signal end
It is connected, second end receives described with reference to ground voltage, the control terminal reception trigger signal.
Preferably, the electrostatic discharge protective circuit further includes diode, the anode of the diode and the third crystal
The control terminal of pipe is connected, and the cathode of the diode is connected with the first end of the third transistor.
Preferably, the first transistor is triode and/or field-effect tube.
Preferably, the second transistor is triode and/or field-effect tube.
Preferably, the signal end is for receiving high level voltage.
The advantageous effect of electrostatic discharge protective circuit provided by the invention is：Utilize the collector and base stage of triode or field
Coupled capacitor between the drain and gate of effect pipe generates starting current instead of high-voltage capacitance, and trigger element is according to the startup
Electric current generates trigger signal, and when trigger signal is effective, vent unit is opened is released path with the energy for forming signal end to ground,
It is released with carrying out ESD energy.Electrostatic discharge protective circuit provided by the invention can be realized quickly when esd pulse occurs in signal end
It opens, prevents chip internal circuits from damaging.Meanwhile because utilizing the collector and base stage of triode or the drain electrode of field-effect tube
Coupled capacitor between grid replaces high-voltage capacitance, and the mask being arranged for high-voltage capacitance can be omitted when carrying out device design
Layer, to reduce mask quantity, creates a further reduction the design cost of circuit, improves the design efficiency of circuit.
Description of the drawings
By referring to the drawings to the description of the embodiment of the present invention, above-mentioned and other purposes of the invention, feature and
Advantage will be apparent from.
Fig. 1 shows the circuit diagram of the electrostatic discharge protective circuit of the prior art.
Fig. 2 shows the structural schematic diagrams of the electrostatic discharge protective circuit of the embodiment of the present invention.
Fig. 3 shows the circuit diagram of the electrostatic discharge protective circuit of first embodiment of the invention.
Fig. 4 shows the circuit diagram of the electrostatic discharge protective circuit of second embodiment of the invention.
Fig. 5 shows the circuit diagram of the electrostatic discharge protective circuit of third embodiment of the invention.
Specific implementation mode
Hereinafter reference will be made to the drawings is more fully described the present invention.In various figures, identical element is using similar attached
Icon is remembered to indicate.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.In addition, may not show in figure
Go out certain well known parts.
It should be appreciated that in the following description, " circuit " refers to passing through electrical connection by least one element or sub-circuit
Or the galvanic circle that electromagnetism connects and composes.As element or another element of circuit " being connected to " or element/circuit " being connected to "
When between two nodes, it can be directly coupled or connected in another element or may exist intermediary element, between element
Connection can be physically, in logic or its combination.On the contrary, when claiming element " being directly coupled to " or " being directly connected to
To " another element when, it is meant that between the two be not present intermediary element.
Fig. 2 shows the structural schematic diagrams of the electrostatic discharge protective circuit of the embodiment of the present invention.As shown in Fig. 2, electrostatic discharge protective circuit
200 include trigger element 230 and the vent unit 220 being connected between signal end 210 and ground.
Specifically, trigger element 230 includes at least trigger circuit 231 of level-one, conversion circuit 232 and the first transistor
233.As shown in Fig. 2, the first end of the first transistor 233 is connect with signal end 210, second end and the trigger circuit being attached thereto
231 input terminal is connected.Parasitic capacitance of the first transistor 233 between its first end and control terminal is connected under the action of coupling
To provide starting current to trigger circuit 231.Trigger element 230 further includes first resistor R1, and first resistor R1 is connected to first
Between the second end and control terminal of transistor 233.
In addition, trigger element 230 includes the 1st grade of trigger circuit 231 to N grades of trigger circuits 231, N is non-zero natural number.
All include input terminal and output end per level-one trigger circuit 231, input terminal is used for receiving the triggering of starting current or upper level
The output current of circuit 231, output end provide the output current of this grade.For example, the input terminal of the 1st grade of trigger circuit 231 receives
Starting current generates the 1st grade of output current according to starting current, and the 2nd to N grade of trigger circuit 231 is respectively according to the 1st to N-1
The output current of grade trigger circuit 231 generates the 2nd to N grade of output current.Conversion circuit 232 and N grades of trigger circuits 231 connect
It connects, generates trigger signal according to N grades of output currents, vent unit 220 carries out energy according to trigger signal to signal end 210
It releases.
In addition, in embodiments of the present invention, the specific series N for the trigger circuit 231 that trigger element 230 is included is according to institute
The cut-in voltage of the starting current and vent unit needs of stating the first transistor output determines that, when N is higher, circuit is also more multiple
It is miscellaneous, cause chip area to increase, cost improves, therefore those skilled in the art can select to trigger according to physical circuit situation
The series N for the trigger circuit 231 for including in unit 230.In some practical applications, series N is preferably 1 or 2.
In embodiment below, the principle of electrostatic discharge protective circuit provided by the invention is illustrated so that N is equal to 1 as an example.
Fig. 3 shows the circuit diagram of the electrostatic discharge protective circuit of first embodiment of the invention.As shown in figure 3, first crystal
Pipe 233 can realize that the collector of triode NPN1 is connect with signal end 210, base stage and first resistor by triode NPN1
The first end of R1 connects, and emitter is connect with the second end of first resistor R1, in addition, the emitter of triode NPN1 and the first electricity
The node of resistance R1 is used for providing starting current.
Trigger circuit 231 includes triode NPN2 and second resistance R2, and collector and the signal end 210 of triode NPN2 connect
It connects, base stage is connect with the node of the emitter of triode NPN1 and first resistor R1 to receive starting current, and emitter is for carrying
For the output current of this grade.Second resistance R2 is connected between the base stage and emitter of triode NPN2.
In addition, the conversion circuit 232 in Fig. 1 can be realized by 3rd resistor R3, the first end of 3rd resistor R3 with
The emitter of triode NPN2 is connected with the node of second resistance R2, second end ground connection.
As shown in figure 3, vent unit 220 includes third transistor N3, first end and the signal end 210 of third transistor N3
Connection, second end ground connection, control terminal are connected with the first end of 3rd resistor to receive trigger signal.
When esd pulse occurs in signal end 210, due to the parasitic capacitance coupling between the collector and base stage of triode NPN1
Cooperation is used, and the voltage between the base stage and emitter of triode NPN1 is raised by first resistor R1 so that triode NPN1 conductings
And provide starting current.Starting current flows through the second resistance R2 in trigger circuit 231 so that the base stage and hair of triode NPN2
Voltage between emitter-base bandgap grading is higher than the conducting voltage of triode NPN2, to which triode NPN2 turns on and generates the output electricity of this grade
Stream.The output current provided by triode NPN2 flows through 3rd resistor R3, to generate triggering in the first end of 3rd resistor R3
Signal, the trigger signal have raised the voltage of the control terminal of third transistor N3 so that third transistor N3 conductings are to form letter
The energy on number end 210 to ground is released path, to the ESD energy for signal end 210 of releasing.
In addition, can also include diode D1, the sun of diode D1 between the control terminal and first end of third transistor N3
Pole is connect with the control terminal of third transistor N3, and cathode is connect with the first end of third transistor N3, to prevent third transistor
It is over-pressed between the first end and ground of N1.
Specifically, third transistor N3 can be realized by N-type metal-oxide-semiconductor, and the control terminal of third transistor N3 is metal-oxide-semiconductor
Grid, first end be metal-oxide-semiconductor drain electrode, second end be metal-oxide-semiconductor source electrode.
Fig. 4 shows the circuit diagram of the electrostatic discharge protective circuit of second embodiment of the invention, the first implementation as shown in figure 3
Example compare, second embodiment of the invention provide electrostatic discharge protective circuit the difference is that：The first transistor 233 is N-type field
The drain electrode of effect pipe N1, field-effect tube N1 are connect with signal end 210, and grid is connect with the first end of first resistor R1, source electrode with
The second end of first resistor R1 is connected to provide starting current.
In addition, structure and the connection pass of trigger circuit 231, conversion circuit 232, diode D1 and vent unit 220
The first embodiment of system as shown in figure 3 is identical, and details are not described herein.
In second embodiment as shown in Figure 4, when esd pulse occurs in signal end 210, due to field-effect tube N1
Drain and gate between parasitic capacitance coupling, the voltage between the grid and source electrode of field-effect tube N1 is by first resistor
R1 is raised so that field-effect tube N1 is connected and provides starting current.Later, starting current flows through second resistance R2 so that three poles
Voltage between the base stage and emitter of pipe NPN2 is higher than the conducting voltage of triode NPN2, to which triode NPN2 is connected and carries
For the output current of this grade.The output current provided by triode NPN2 flows through 3rd resistor R3, to 3rd resistor R3's
First end generates trigger signal, which has raised the voltage of the grid of third transistor N3 so that third transistor N3
Conducting is released path with the energy for forming signal end 210 to ground, to the ESD energy for signal end 210 of releasing.
Fig. 5 shows the circuit diagram of the electrostatic discharge protective circuit of third embodiment of the invention, and as shown in fig. 4 second implements
Example compare, third embodiment of the invention provide electrostatic discharge protective circuit the difference is that, trigger circuit 231 include N-type field
The first end and second end of effect pipe N2 and second resistance R2, second resistance R2 respectively with the grid of field-effect tube N2 and source electrode phase
Even, the drain electrode of field-effect tube N2 is connect with signal end 210, and the first end of second resistance R2 is connected with the second end of first resistor R1
To receive starting current, to which second resistance R2 can provide the gate source voltage of field-effect tube N2 with controlling filed according to starting current
The source electrode of the turn-on and turn-off of effect pipe N2, field-effect tube N2 provides the output current of this grade.
In addition, the knot of the first transistor 233, first resistor R1, conversion circuit 232, diode D1 and vent unit 220
Structure and connection relation second embodiment as shown in fig. 4 are identical, and details are not described herein.
In 3rd embodiment as shown in Figure 5, when esd pulse occurs in signal end 210, due to field-effect tube N1
Drain and gate between parasitic capacitance coupling, the gate source voltage of field-effect tube N1 raised by first resistor R1 so that
Field-effect tube N1 turns on and generates starting current.Starting current flows through second resistance R2 so that the gate source voltage of field-effect tube N2
It is raised to the conducting voltage of field-effect tube N2, to which field-effect tube N2 turns on and generates the output current of this grade.By field-effect
The output current that pipe N2 is provided flows through 3rd resistor R3, to generate trigger signal, the triggering in the first end of 3rd resistor R3
Signal has raised the grid voltage of third transistor N3 so that third transistor N3 conductings are to form the energy that signal end 210 arrives ground
Path of releasing is measured, to the ESD energy for signal end 210 of releasing.
In conclusion collector and base stage or field-effect tube of the electrostatic discharge protective circuit provided by the invention using triode
Drain and gate between coupled capacitor generate starting current instead of high-voltage capacitance, trigger element is produced according to the starting current
Raw trigger signal, when trigger signal is effective, vent unit is opened is released path with the energy for forming signal end to ground, with progress
ESD energy is released.Electrostatic discharge protective circuit provided by the invention can realize quick unlatching when esd pulse occurs in signal end,
Prevent chip internal circuits from damaging.Meanwhile because utilizing the collector and base stage of triode or drain electrode and the grid of field-effect tube
Coupled capacitor between pole replaces high-voltage capacitance, and the mask layer being arranged for high-voltage capacitance can be omitted when carrying out device design,
To reduce mask quantity, creates a further reduction the design cost of circuit, improves the design efficiency of circuit.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also include other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
As described above according to the embodiment of the present invention, there is no all details of detailed descriptionthe for these embodiments, also not
Limit the specific embodiment that the invention is only described.Obviously, as described above, can make many modifications and variations.This explanation
These embodiments are chosen and specifically described to book, is in order to preferably explain the principle of the present invention and practical application, belonging to making
Technical field technical staff can utilize modification of the invention and on the basis of the present invention to use well.The present invention is only by right
The limitation of claim and its full scope and equivalent.
Claims (11)
1. a kind of electrostatic discharge protective circuit, which is characterized in that including：
Vent unit is connected with signal end, and the vent unit carries out energy to the signal end according to trigger signal and releases；
Trigger element, for providing the trigger signal；
Wherein, the trigger element includes the first transistor, the first transistor posting between its first end and control terminal
To provide starting current, the first end of the first transistor is connected with the signal end for the raw lower conducting of capacitive coupling effect, when
When the first transistor conducting, the trigger element provides the trigger signal according to the starting current.
2. electrostatic discharge protective circuit according to claim 1, which is characterized in that the trigger element further includes first resistor,
The first resistor is connected between the second end and control terminal of the first transistor.
3. electrostatic discharge protective circuit according to claim 1, which is characterized in that the trigger element further includes：
1st to N grade of trigger circuit, the 1st grade of trigger circuit generate the 1st grade of output current according to the starting current, and the 2nd to N
The grade trigger circuit generates the 2nd to N grade of the output current according to the 1st to N-1 grade of the output current respectively, and N is
Non-zero natural number；And
Conversion circuit generates the trigger signal according to N grades of the output currents.
4. electrostatic discharge protective circuit according to claim 3, which is characterized in that at least trigger circuit described in level-one is for amplifying
The output current of the starting current or upper level trigger circuit.
5. electrostatic discharge protective circuit according to claim 3, which is characterized in that every grade of trigger circuit includes：
Input terminal receives the starting current or the corresponding output current；
Output end provides the output current of this grade；
Second transistor, control terminal are connected with the input terminal, and first end is connected with the signal end, second end and the output
End is connected；And
Second resistance is connected between the input terminal and the output end.
6. electrostatic discharge protective circuit according to claim 5, which is characterized in that the conversion circuit includes 3rd resistor, institute
The first end for stating 3rd resistor is connected with the output end of the N grades of trigger circuits to provide the trigger signal, the second termination
It receives and refers to ground voltage.
7. electrostatic discharge protective circuit according to claim 1, which is characterized in that the vent unit includes third transistor,
The first end of the third transistor is connected with the signal end, and second end receives described with reference to ground voltage, control terminal reception institute
State trigger signal.
8. electrostatic discharge protective circuit according to claim 7, which is characterized in that further include diode, the sun of the diode
Pole is connected with the control terminal of the third transistor, and the cathode of the diode is connected with the first end of the third transistor.
9. electrostatic discharge protective circuit according to claim 1, which is characterized in that the first transistor be triode and/or
Field-effect tube.
10. electrostatic discharge protective circuit according to claim 5, which is characterized in that the second transistor be triode and/or
Field-effect tube.
11. electrostatic discharge protective circuit according to claim 1, which is characterized in that the signal end is for receiving high level electricity
Pressure.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810346902.9A CN108512207B (en) | 2018-04-18 | 2018-04-18 | Electrostatic protection circuit |
| TW108106307A TWI696258B (en) | 2018-04-18 | 2019-02-25 | Electrostatic protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810346902.9A CN108512207B (en) | 2018-04-18 | 2018-04-18 | Electrostatic protection circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108512207A true CN108512207A (en) | 2018-09-07 |
| CN108512207B CN108512207B (en) | 2020-01-24 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810346902.9A Active CN108512207B (en) | 2018-04-18 | 2018-04-18 | Electrostatic protection circuit |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108512207B (en) |
| TW (1) | TWI696258B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112865058A (en) * | 2021-04-12 | 2021-05-28 | 上海传泰电子科技有限公司 | High-voltage peak bleeder circuit |
| CN112968437A (en) * | 2021-04-01 | 2021-06-15 | 长鑫存储技术有限公司 | Electrostatic protection circuit and electrostatic protection network of chip |
| CN118630710A (en) * | 2024-08-09 | 2024-09-10 | 博瑞集信(西安)电子科技股份有限公司 | ESD protection circuit |
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| CN1658388A (en) * | 2004-02-18 | 2005-08-24 | 富士通株式会社 | Electrostatic discharge protection circuit |
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| CN107565537A (en) * | 2017-09-29 | 2018-01-09 | 广州慧智微电子有限公司 | A kind of esd protection circuit and method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112968437A (en) * | 2021-04-01 | 2021-06-15 | 长鑫存储技术有限公司 | Electrostatic protection circuit and electrostatic protection network of chip |
| CN112968437B (en) * | 2021-04-01 | 2022-07-08 | 长鑫存储技术有限公司 | Electrostatic protection circuit and electrostatic protection network of chip |
| CN112865058A (en) * | 2021-04-12 | 2021-05-28 | 上海传泰电子科技有限公司 | High-voltage peak bleeder circuit |
| CN118630710A (en) * | 2024-08-09 | 2024-09-10 | 博瑞集信(西安)电子科技股份有限公司 | ESD protection circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI696258B (en) | 2020-06-11 |
| TW201944572A (en) | 2019-11-16 |
| CN108512207B (en) | 2020-01-24 |
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