CN107565537A - A kind of esd protection circuit and method - Google Patents
A kind of esd protection circuit and method Download PDFInfo
- Publication number
- CN107565537A CN107565537A CN201710924098.3A CN201710924098A CN107565537A CN 107565537 A CN107565537 A CN 107565537A CN 201710924098 A CN201710924098 A CN 201710924098A CN 107565537 A CN107565537 A CN 107565537A
- Authority
- CN
- China
- Prior art keywords
- esd
- semiconductor
- oxide
- metal
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
The embodiments of the invention provide a kind of esd protection circuit and method, protection circuit includes：Bleeder circuit, for the voltage of dc source to be carried out into partial pressure and exports the bleeder circuit of voltage signal after partial pressure；Electric charge discharges branch road, for that need to carry out the device work of ESD protections using voltage signal driving after partial pressure, and will be discharged reverse ESD when there is reverse ESD by positive ESD current drains to ground nodes when there is positive ESD；Wherein, the value that need to carry out the driving voltage of the device of ESD protections is less than the magnitude of voltage of dc source；In this way, high power supply voltage is converted to by low-voltage by bleeder circuit, it is ensured that the normal operation of the device of low pressure process, and positive ESD is at least discharged into branch road by electric charge and discharged, it is ensured that the device under low pressure process can bear positive ESD；In addition, the metal-oxide-semiconductor in need to carrying out the devices of ESD protections can use the device that can bear high power supply voltage between source-drain electrode, it prevent metal-oxide-semiconductor from being damaged under high power supply voltage.
Description
Technical field
The present invention relates to ESD protection techniques, more particularly to a kind of Electro-static Driven Comb (Electro-Static discharge,
ESD) protection circuit and method.
Background technology
ESD is a kind of common near field Harm and control, can form high voltage, transient high-current, circuit devcie be caused to damage.
To prevent the high current high voltage of this moment from causing to damage to device, need to design esd protection circuit inside circuit.So
And the devices such as the electric capacity under low pressure process and transistor (device for being adapted to low supply voltage) are being applied to high power supply voltage
During scene, corresponding esd protection circuit is also lacked at present, causes to produce the device failure occurred because of situations such as ESD.
The content of the invention
To solve existing technical problem, the embodiment of the present invention provides a kind of esd protection circuit and method, Ke Yi
When the devices such as the electric capacity under low pressure process and transistor are applied into high power supply voltage scene, there is provided corresponding esd protection circuit,
The device under low pressure process is set to bear by high power supply voltage and caused ESD.
To reach above-mentioned purpose, what the technical scheme of the embodiment of the present invention was realized in：
The embodiment of the present invention provides a kind of Electro-static Driven Comb esd protection circuit, and the protection circuit accesses dc source, described
Protection circuit includes：
Bleeder circuit, for the voltage of dc source to be carried out into partial pressure and exports the bleeder circuit of voltage signal after partial pressure；
Electric charge discharges branch road, for that need to carry out the device work of ESD protections using voltage signal driving after partial pressure, and is going out
Will be by positive ESD current drains to ground nodes during existing positive ESD；Wherein, the driving electricity of the device that ESD protections need to be carried out
The value of pressure is less than the magnitude of voltage of the dc source.
The embodiment of the present invention also provides a kind of Electro-static Driven Comb ESD guard methods, and methods described includes：
The voltage of dc source is subjected to partial pressure, and exports voltage signal after partial pressure；
The device that ESD protections need to be carried out using voltage signal driving after partial pressure is worked, and will be by just when there is positive ESD
To ESD current drains to ground nodes；Wherein, the value of the driving voltage of the device that need to carry out ESD protections is less than described straight
Flow the magnitude of voltage of power supply.
In a kind of esd protection circuit provided in an embodiment of the present invention and method, the protection circuit accesses dc source, institute
Stating protection circuit includes：Bleeder circuit, for the voltage of dc source to be carried out into partial pressure and exports point of voltage signal after partial pressure
Volt circuit；Electric charge discharges branch road, for that need to carry out the device work of ESD protections using voltage signal driving after partial pressure, and is going out
Will be by positive ESD current drains to ground nodes, when reverse ESD to discharge temporarily by its parasitic diode during existing positive ESD
Electric charge；Wherein, it is (small to be no more than the maximum voltage that device can be born for the value of the driving voltage of the device that need to carry out ESD protections
In the magnitude of voltage of the dc source)；In this way, high power supply voltage is on the one hand converted to by low-voltage by bleeder circuit, it is ensured that
The electric capacity of low pressure process and the normal operation of metal-oxide-semiconductor, on the other hand, positive ESD is at least discharged into branch road by electric charge and released
Put, it is ensured that the device under low pressure process can bear positive ESD.
Brief description of the drawings
Fig. 1 is a schematic diagram of the esd protection circuit in the embodiment of the present invention；
Fig. 2 is the flow chart of Electro-static Driven Comb ESD guard methods of the embodiment of the present invention；
Fig. 3 is another schematic diagram of the esd protection circuit in the embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the present invention will be described in further detail.It is it should be appreciated that described herein
Specific embodiment only to explain the present invention, is not intended to limit the present invention.
The embodiment of the invention discloses a kind of esd protection circuit and method, can be directed to and be applied to high power supply voltage application
The low pressure process device of scene provides ESD protections, and here, low pressure process device is generally used for representing at low supply voltages can be with
The device of normal work, this device be directly accessed high power supply voltage may generating device damage situations such as, the present invention is real
Apply in example, low pressure process device includes but is not limited to electric capacity, metal-oxide-semiconductor (Metal Oxide
Semiconductor) field-effect transistor (abbreviation metal-oxide-semiconductor) etc.；It should be noted that the low supply voltage of above-mentioned record and height
Supply voltage is relative concept, for example, low pressure process device be can under 2.5V supply voltages normal work device, when
When supply voltage is more than 2.5V, it is believed that power supply is high power supply voltage；It is pointed out that merely illustrate herein low
Process devices and high voltage voltage are pressed, according to actual conditions, low pressure process device can also be normal under other supply voltages
The device of work, high power supply voltage can also actual conditions be configured.
Low pressure process device and application scenarios based on above-mentioned record, propose following specific embodiment.
First embodiment
Fig. 1 is a schematic diagram of the esd protection circuit in the embodiment of the present invention, as shown in figure 1, the esd protection circuit
Dc source 101 is accessed, the protection circuit includes：
Bleeder circuit 102, for the voltage of dc source to be carried out into partial pressure and exports the partial pressure electricity of voltage signal after partial pressure
Road；
Electric charge discharges branch road 103, for the device work of ESD protections need to be carried out using voltage signal driving after partial pressure, and
Ground nodes will be released to by positive ESD electric currents (positive charge brought by positive ESD) when there is positive ESD；Wherein, institute
The value for stating the driving voltage for the device that need to carry out ESD protections is less than the magnitude of voltage of the dc source, and is no more than corresponding device
The maximum voltage that can be born.
Here, electric charge release branch road 103, can be also used for coming reverse two pole temporarily by power supply to ground in reverse ESD
Pipe discharges electric charge, and this backward dioded can be various forms of diodes, for example, it may be the parasitism of positive protection device
Diode, positive protection device value here need to carry out the device of ESD protections.
Here, the device that need to carry out ESD protections includes following at least one：Electric capacity, metal-oxide-semiconductor.
Exemplarily, voltage signal after partial pressure is accessed in the one end that need to carry out at least one electric capacity of the device of ESD protections, separately
One end connects ground nodes.
Optionally, the value that need to carry out the driving voltage of the device of ESD protections is not more than the pressure voltage or described of the electric capacity
The value of the grid maximum voltage of metal-oxide-semiconductor.
The quantity of the electric capacity to ESD protective device and metal-oxide-semiconductor does not limit in the embodiment of the present invention, need to carry out ESD
The quantity of electric capacity and metal-oxide-semiconductor in the device of protection can be determined according to practical application request；Alternatively, for needing to carry out
The physical circuit annexation of the device of ESD protections, can also flexibly be set according to practical application request.
It is understood that the pressure voltage of electric capacity is used to represent the maximum voltage value that electric capacity can be born；In the grid of metal-oxide-semiconductor
When pole tension exceedes the grid maximum voltage of metal-oxide-semiconductor, MOS may be caused to be not normally functioning, it is necessary to illustrate, above-mentioned right
In the explanation of the grid maximum voltage of metal-oxide-semiconductor, only the numerical value of voltage is illustrated, it is not intended that voltage is positive and negative.
Obviously, it can be seen that when the pressure voltage of electric capacity is less than the direct current power source voltage, the maximum electricity of grid of metal-oxide-semiconductor
When pressure is less than the direct current power source voltage as, electric capacity and metal-oxide-semiconductor can be seen to the low pressure process under high power supply voltage scene
Device.
Exemplary, the parameter of bleeder circuit 102 can be according to device in direct current power source voltage and electric charge release branch road
Normal working voltage be configured, for example, direct current power source voltage is 6V, and metal-oxide-semiconductor and electric capacity in electric charge release branch road
Normal working voltage is 3V, then set bleeder circuit must ensure that its output voltage is 3V, to ensure that electric charge discharges branch road
The normal operation of middle device.
When actually implementing, electric charge release branch road 103 can include：
Voltage signal after partial pressure is connected to the tie point for the device that need to carry out ESD protections；And
The device that ESD protections need to be carried out is connected to the second branch road of ground nodes.
For example, tie point may each comprise the wire connected for circuit with the second branch road, tie point and second
Road may each comprise the devices such as resistance.
As can be seen that in the esd protection circuit of above-mentioned record, on the one hand, by setting suitable bleeder circuit, can incite somebody to action
High power supply voltage is converted to the low-voltage of the proper device operation in suitable electric charge release branch road, it is ensured that the electric capacity of low pressure process and
The normal operation of metal-oxide-semiconductor, on the other hand, positive ESD at least can be discharged branch road by electric charge release branch road by electric charge to be released
Put, it is ensured that the device under low pressure process can bear positive ESD.
Optionally, the protection circuit of above-mentioned record can also include being used to release reverse ESD electric currents (i.e. by reverse ESD bands
Come negative electrical charge) diode (Fig. 1 is not shown), that is to say, that for reverse ESD electric currents, can be discharged by diode；
In one optional example, the plus earth of diode, negative electrode connects the dc source of above-mentioned record；In this way, can be easily
Releasing reverse ESD electric currents.
Especially, metal-oxide-semiconductor is included in the electric charge release branch road of above-mentioned record, if any one in electric charge release branch road
The source electrode of metal-oxide-semiconductor and drain electrode connect dc source and ground respectively, then can be not provided with extra diode；This is due to each
All there is parasitic diode in metal-oxide-semiconductor, at this point it is possible to be released reverse ESD electric currents by the parasitic diode of corresponding metal-oxide-semiconductor.
When actually implementing, when the device that need to carry out ESD protections includes at least one metal-oxide-semiconductor, in order to ensure metal-oxide-semiconductor
Normal work, one in the source electrode and drain electrode of metal-oxide-semiconductor can be grounded, by another company in the source electrode and drain electrode of metal-oxide-semiconductor
Connect dc source；For example, the source electrode of metal-oxide-semiconductor or drain electrode can be directly grounded, can also be on the source electrode of metal-oxide-semiconductor or drain electrode and ground
Between series resistance；The source electrode of metal-oxide-semiconductor or drain electrode can be directly connected to dc source, can also metal-oxide-semiconductor source electrode or drain electrode with
Series resistance between dc source.
It is normal in order to ensure metal-oxide-semiconductor as can be seen that the need of above-mentioned record carry out the device of ESD protections when including metal-oxide-semiconductor
Operation, the drain-source breakdown voltage (pressure voltage) that need to carry out each metal-oxide-semiconductor in the device of ESD protections are more than the dc source
Voltage；Here, the drain-source breakdown voltage of metal-oxide-semiconductor refers to the timing of metal-oxide-semiconductor gate source voltage one, and metal-oxide-semiconductor normal work can bear
Maximum drain-source voltage.
Because the drain-source breakdown voltage of LDMOS (LDMOS) pipe is generally larger, show at one
In example, it can be LDMOS pipes that need to carry out at least one metal-oxide-semiconductor in each metal-oxide-semiconductor in the device of ESD protections, especially, need to be entered
Each metal-oxide-semiconductor in the device of row ESD protections is LDMOS pipes.It should be noted that merely illustrate needs to carry out here
The species of each metal-oxide-semiconductor in the device of ESD protections, the metal-oxide-semiconductor being not intended to limit in the device that need to carry out ESD protections must be
LDMOS is managed, for example, the metal-oxide-semiconductor in need to carrying out the devices of ESD protections can also be that other source-drain electrodes can bear high-tension device
Part.
As can be seen that using in the esd protection circuit described in second embodiment of the invention, it is ensured that ESD guarantors need to be carried out
The source-drain electrode of metal-oxide-semiconductor in the device of shield can bear larger voltage difference, ensure that metal-oxide-semiconductor will not puncture because of high voltage.
Optionally, the number that need to carry out the metal-oxide-semiconductor in the device of ESD protections can be 1 or at least two,
Illustrated separately below by two specific examples.
Example 1：
It is the 1st metal-oxide-semiconductor that the metal-oxide-semiconductor in the device of ESD protections, which need to be carried out, and the grid of the 1st metal-oxide-semiconductor is described for accessing
Voltage signal after partial pressure.
Optionally, the grid of the 1st metal-oxide-semiconductor can be directly connected to the output end of bleeder circuit, can also connect other
Device (such as resistance or electric capacity) connects the output end of bleeder circuit afterwards.
When actually implementing, one in the source electrode and drain electrode of the 1st metal-oxide-semiconductor is directly connected to dc source, or is going here and there
Dc source is connected after connection resistance, and another in the source electrode and drain electrode of the 1st metal-oxide-semiconductor is directly connected to dc source, Huo Zhe
It is grounded after series resistance；The annexation of the source electrode and drain electrode of 1st metal-oxide-semiconductor in circuit needs true according to practical application request
It is fixed.
Example 2：
The cascade circuit that the device of ESD protections includes being formed to the cascade of n-th metal-oxide-semiconductor by the 1st metal-oxide-semiconductor, institute need to be carried out
The grid for stating the 1st metal-oxide-semiconductor is used to access voltage signal after the partial pressure, and N is the natural number more than 1.
When actually implementing, one in the source electrode and drain electrode of the 1st metal-oxide-semiconductor is directly connected to dc source, or is going here and there
Dc source is connected after connection resistance, and another in the source electrode and drain electrode of the 1st metal-oxide-semiconductor is directly connected to dc source, Huo Zhe
It is grounded after series resistance；The annexation of the source electrode and drain electrode of 1st metal-oxide-semiconductor in circuit needs true according to practical application request
It is fixed.
Work as n=2, during 3 ... N, the annexation and the 1st metal-oxide-semiconductor phase of the source electrode and drain electrode of n-th of metal-oxide-semiconductor in circuit
Together, repeat no more here.
, can also be in each metal-oxide-semiconductor in need to carrying out the device of ESD protections for some specific practical application requests
Resistance is connected between grid and ground, for example, during each metal-oxide-semiconductor conducting, the resistance between its grid and ground has electric current process, by
It is cascade connection between metal-oxide-semiconductor, then can turn on next stage metal-oxide-semiconductor.
Optionally, bleeder circuit is resistor voltage divider circuit, the resistance number in resistor voltage divider circuit is not carried out here
Limit, the resistance number in resistor voltage divider circuit can be designated as M, and M is the natural number more than 1.
It is understood that in circuit technology, resistance can inevitably have the relatively small parasitic capacitance of capacitance,
When positive esd event arrives (positive ESD electric currents occur), cause bleeder circuit in parasitic capacitance charging of the electric charge to resistance
Output voltage be not preferable output voltage when there is high-frequency signal influence；For example, one of the circuit of an electric resistance partial pressure
The preferable output voltage in resistance both ends is the 1/3 of direct current power source voltage, due to the parasitic capacitance of the resistance so that the resistance both ends
Actual output voltage be not the 1/3 of direct current power source voltage.
In order to solve the above-mentioned technical problem, in 1 example, each resistance also parallel connection of resistor voltage divider circuit is connected to electricity
Hold, be more than or equal to the i-th of the resistor voltage divider circuit with the capacitance of the electric capacity of i-th of resistor coupled in parallel of resistor voltage divider circuit
K times of the capacitance of the parasitic capacitance of individual resistance, K are the positive number for being more than 1 of setting, and it is electric resistance partial pressure electricity that i, which takes 1 to M, M,
The resistance number on road；
Here, K value can be according to empirically being set, such as K is more than 5, then, pass through resistor voltage divider circuit
Each resistance the electric capacity of larger capacitance value in parallel therewith is set, it can be ensured that the output voltage of the circuit of electric resistance partial pressure is in high frequency
Still practical application request is reached under the influence of signal, it is ensured that the normal operation of the device in electric charge release branch road.
For the esd protection circuit of above-mentioned record, the course of work can be illustrated using Electro-static Driven Comb ESD guard methods.
Fig. 2 is the flow chart of Electro-static Driven Comb ESD guard methods of the embodiment of the present invention, as shown in Fig. 2 the flow can wrap
Include：
Step 201：The voltage of dc source is subjected to partial pressure, and exports voltage signal after partial pressure；
Step 202：The device that ESD protections need to be carried out using voltage signal driving after partial pressure is worked, and positive ESD is occurring
When will be by positive ESD current drains to ground nodes；Wherein, the value of the driving voltage of the device that need to carry out ESD protections is small
In the magnitude of voltage of the dc source, and the maximum voltage that can be born no more than device.
In addition, coming to discharge electric charge temporarily by the backward dioded of power supply to ground in reverse ESD, this backward dioded can
To be various forms of diodes, for example, it may be the parasitic diode of positive protection device.
Optionally, the device of ESD protections need to be carried out including at least one of following：Electric capacity, metal-oxide-semiconductor.
Second embodiment
In order to more embody the purpose of the present invention, on the basis of the above embodiment of the present invention, carry out further
Illustrate.
Fig. 3 is another schematic diagram of the esd protection circuit of the embodiment of the present invention, as shown in figure 3, in esd protection circuit
Resistor voltage divider circuit include first resistor R1 and second resistance R2, first resistor R1 and second resistance R2 are parallel with first respectively
Electric capacity C1 and the second electric capacity C2；Electric charge release branch road includes the 3rd electric capacity C3a, the 4th electric capacity C3b, the first metal-oxide-semiconductor M1, second
Metal-oxide-semiconductor M2,3rd resistor Rg1 and the 4th resistance Rg2, wherein, the 3rd electric capacity C3a one end connection dc source Vcc, the other end
The 4th electric capacity C3b one end is connected, 3rd resistor Rg1 is connected between the 4th electric capacity C3b other end and ground；First metal-oxide-semiconductor M1
Grid connect the 4th electric capacity C3b other end, a connection dc source Vcc in the first metal-oxide-semiconductor M1 source electrode and drain electrode,
Another connects the second metal-oxide-semiconductor M2 grid and the 4th resistance Rg2 one end, the 4th resistance Rg2 other end ground connection respectively；The
A connection dc source Vcc in two metal-oxide-semiconductor M2 source electrode and drain electrode, another ground connection, it can be seen that the first metal-oxide-semiconductor M1
Mutually cascaded with the second metal-oxide-semiconductor M2；
In addition, esd protection circuit also includes the 5th resistance R3, the 5th resistance R3 one end connection first resistor R1 and second
Resistance R2 common node, the other end connect the 3rd electric capacity C3a and the 4th electric capacity C3b common node；Esd protection circuit also wraps
Include diode D1, diode D1 plus earth, negative electrode connection dc source Vcc.
By taking the application of the electric capacity of 2.5V low pressure process and metal-oxide-semiconductor under 5V supply voltages as an example；In Fig. 2, pass through the first electricity
Supply voltage progress partial pressure is caused the 3rd electric capacity C3a and the DC voltage at the 4th electric capacity C3b both ends by resistance R1 and second resistance R2
Difference is the half of supply voltage, and to meet process requirements, now first resistor R1 and second resistance R2 resistance value are equal.
Because in integrated circuit technology, always inevitably there is the relatively small parasitic capacitance of capacitance in resistance；When
Positive esd event comes interim, and the output voltage of dead resistance charging of the electric charge to resistance with causing electric resistance partial pressure circuit is in high frequency
It is not the half of supply voltage in the case of under effect of signals；Therefore, can distinguish on first resistor R1 and second resistance R2
Two capacitances in parallel electric capacity big with respect to R1/R2 parasitic capacitances：First electric capacity C1 and the second electric capacity C2, now, first resistor R1
Influence with second resistance R2 parasitic capacitance can be ignored, and the first electric capacity C1 and the second electric capacity C2 capacitance approach or phase
Deng to ensure the output voltage of resistor voltage divider circuit in the case where there is high-frequency signal influence still for the half of supply voltage.
In the esd protection circuit specific works of above-mentioned record, when positive ESD signals carry out interim, the 3rd electric capacity C3a and the
Four electric capacity C3b charge, and the voltage of the first transistor M1 grids rises, the first metal-oxide-semiconductor M1 conductings；After first metal-oxide-semiconductor M1 conductings, the
Electric current is had on four resistance Rg2 to flow through, therefore the second metal-oxide-semiconductor M2 grid voltage can rise, the second metal-oxide-semiconductor M2 conductings；Now
Positive ESD electric charge can be discharged into ground by the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2.Wherein, on guarantee 3rd resistor Rg1
There are enough electric currents that the first metal-oxide-semiconductor M1 is turned on, the 5th resistance R3 resistance value is significantly larger than Rg1, avoids signal by the
Then five resistance R3 are discharged into ground by the resistance and electric capacity (i.e. second resistance R2 and the second electric capacity C2) on the left side.
As can be seen that resistor voltage divider circuit make it that the first metal-oxide-semiconductor M1 gate source voltage is the half (2.5V) of supply voltage,
To meet technological requirement；The first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2 are managed using LDMOS simultaneously, and its source and drain can bear larger electricity
Pressure, to avoid the source and drain of the device caused by high power supply voltage from puncturing.
In addition, when reverse esd event comes temporarily, electric charge can be discharged by diode D1；Here, can not also additionally set
Diode D1 is put, this is due to that parasitic diode in the second metal-oxide-semiconductor can also produce and diode D1 identicals act on.
As can be seen that in fourth embodiment of the invention, pass through the electric capacity C3a of electric resistance partial pressure the 3rd or the 4th electric capacity C3b
The voltage difference at both ends is reduced to the half of direct current power source voltage, hereby it is ensured that in the case of high power supply voltage, low pressure process electricity
Appearance will not puncture；And when metal-oxide-semiconductor (including the first transistor M1 and second transistor M2) uses LDMOS pipes so that metal-oxide-semiconductor source
The tolerable larger voltage difference of leakage, hereby it is ensured that metal-oxide-semiconductor will not puncture because of high voltage.
It should be noted that the esd protection circuit shown in Fig. 3 is only an example of the esd protection circuit of the present invention；
According to actual conditions, Fig. 3 circuit can be directed to, the quantity of change resistance, electric capacity and metal-oxide-semiconductor can also be by two poles in Fig. 3
Pipe D1 removes, according to practical application request, can by different resistant series or parallel connection, or, by different electric capacity series connection or
It is in parallel.
The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited thereto, any
Those familiar with the art the invention discloses technical scope in, the change or replacement that can readily occur in, all should
It is included within the scope of the present invention.Therefore, protection scope of the present invention should using the scope of the claims as
It is accurate.
Claims (12)
1. a kind of Electro-static Driven Comb esd protection circuit, it is characterised in that the protection circuit accesses dc source, the protection electricity
Road includes：
Bleeder circuit, for the voltage of dc source to be carried out into partial pressure and exports the bleeder circuit of voltage signal after partial pressure；
Electric charge discharges branch road, for that need to carry out the device work of ESD protections using voltage signal driving after partial pressure, and is occurring just
To will be by positive ESD current drains to ground nodes during ESD；Wherein, the driving voltage of the device that ESD protections need to be carried out
Magnitude of voltage of the value less than the dc source.
2. protection circuit according to claim 1, it is characterised in that the device that need to carry out ESD protections includes following
It is at least one：Electric capacity, mos field effect transistor metal-oxide-semiconductor.
3. protection circuit according to claim 2, it is characterised in that the driving electricity of the device that ESD protections need to be carried out
The value of pressure is no more than the value of the pressure voltage of the electric capacity or the grid maximum voltage of the metal-oxide-semiconductor.
4. protection circuit according to claim 2, it is characterised in that the device that need to carry out ESD protections is included at least
During one metal-oxide-semiconductor, the drain-source breakdown voltage of each metal-oxide-semiconductor in the device that need to carry out ESD protections is more than the direct current
The voltage in source.
5. protection circuit according to claim 4, it is characterised in that in the device that ESD protections need to be carried out at least
One metal-oxide-semiconductor is managed for LDMOS LDMOS.
6. the protection circuit according to claim 4 or 5, it is characterised in that in the device that ESD protections need to be carried out
Metal-oxide-semiconductor is the 1st metal-oxide-semiconductor, and the grid of the 1st metal-oxide-semiconductor accesses voltage signal after the partial pressure, the 1st metal-oxide-semiconductor
An access dc source in source electrode and drain electrode, another connection ground connection section in the source electrode and drain electrode of the 1st metal-oxide-semiconductor
Point；Or
Metal-oxide-semiconductor in the device that ESD protections need to be carried out includes the 1st metal-oxide-semiconductor to n-th metal-oxide-semiconductor, the 1st metal-oxide-semiconductor
Mutually cascaded to n-th metal-oxide-semiconductor, the grid of the 1st metal-oxide-semiconductor accesses voltage signal after the partial pressure, described to carry out ESD
An access dc source in the source electrode and drain electrode of each metal-oxide-semiconductor in the device of protection, the device that ESD protections need to be carried out
Another connection ground nodes in the source electrode and drain electrode of each metal-oxide-semiconductor in part, N is the natural number more than 1.
7. protection circuit according to claim 2, it is characterised in that at least the one of the device that ESD protections need to be carried out
Voltage signal after one end access partial pressure of individual electric capacity, other end connection ground nodes.
8. protection circuit according to claim 1, it is characterised in that the protection circuit also includes：For releasing reversely
The diode of ESD electric currents.
9. protection circuit according to claim 1, it is characterised in that the bleeder circuit is resistor voltage divider circuit.
10. protection circuit according to claim 9, it is characterised in that each resistance of the resistor voltage divider circuit is also simultaneously
Connection has electric capacity, is more than or equal to the electric resistance partial pressure with the capacitance of the electric capacity of i-th of resistor coupled in parallel of resistor voltage divider circuit
K times of the capacitance of the parasitic capacitance of i-th of resistance of circuit, K are the positive number more than 1, and it is the electric resistance partial pressure that i, which takes 1 to M, M,
The resistance number of circuit.
11. a kind of Electro-static Driven Comb ESD guard methods, it is characterised in that methods described includes：
The voltage of dc source is subjected to partial pressure, and exports voltage signal after partial pressure；
The device that ESD protections need to be carried out using voltage signal driving after partial pressure is worked, and will be by forward direction when there is positive ESD
ESD current drains are to ground nodes；Wherein, the value of the driving voltage of the device that need to carry out ESD protections is less than the direct current
The magnitude of voltage of power supply.
12. according to the method for claim 11, it is characterised in that the device that need to carry out ESD protections is included below extremely
One item missing：Electric capacity, mos field effect transistor metal-oxide-semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710924098.3A CN107565537B (en) | 2017-09-29 | 2017-09-29 | A kind of esd protection circuit and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710924098.3A CN107565537B (en) | 2017-09-29 | 2017-09-29 | A kind of esd protection circuit and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107565537A true CN107565537A (en) | 2018-01-09 |
| CN107565537B CN107565537B (en) | 2019-09-20 |
Family
ID=60984204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710924098.3A Active CN107565537B (en) | 2017-09-29 | 2017-09-29 | A kind of esd protection circuit and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107565537B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108512207A (en) * | 2018-04-18 | 2018-09-07 | 矽力杰半导体技术(杭州)有限公司 | Electrostatic discharge protective circuit |
| CN108879633A (en) * | 2018-06-07 | 2018-11-23 | 广州慧智微电子有限公司 | A kind of esd protection circuit and method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1658388A (en) * | 2004-02-18 | 2005-08-24 | 富士通株式会社 | Electrostatic discharge protection circuit |
| US20090161273A1 (en) * | 2007-12-19 | 2009-06-25 | Xiaoming Li | High voltage tolerant electrostatic discharge protection circuit |
| CN102315633A (en) * | 2010-07-06 | 2012-01-11 | 瑞昱半导体股份有限公司 | Electrostatic protection circuit |
| CN106786463A (en) * | 2017-01-04 | 2017-05-31 | 上海华虹宏力半导体制造有限公司 | High pressure ESD protects triggers circuit |
| CN107403796A (en) * | 2016-05-20 | 2017-11-28 | 中芯国际集成电路制造(上海)有限公司 | High pressure ESD protection circuits |
-
2017
- 2017-09-29 CN CN201710924098.3A patent/CN107565537B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1658388A (en) * | 2004-02-18 | 2005-08-24 | 富士通株式会社 | Electrostatic discharge protection circuit |
| US20090161273A1 (en) * | 2007-12-19 | 2009-06-25 | Xiaoming Li | High voltage tolerant electrostatic discharge protection circuit |
| CN102315633A (en) * | 2010-07-06 | 2012-01-11 | 瑞昱半导体股份有限公司 | Electrostatic protection circuit |
| CN107403796A (en) * | 2016-05-20 | 2017-11-28 | 中芯国际集成电路制造(上海)有限公司 | High pressure ESD protection circuits |
| CN106786463A (en) * | 2017-01-04 | 2017-05-31 | 上海华虹宏力半导体制造有限公司 | High pressure ESD protects triggers circuit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108512207A (en) * | 2018-04-18 | 2018-09-07 | 矽力杰半导体技术(杭州)有限公司 | Electrostatic discharge protective circuit |
| CN108879633A (en) * | 2018-06-07 | 2018-11-23 | 广州慧智微电子有限公司 | A kind of esd protection circuit and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107565537B (en) | 2019-09-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102017144B (en) | Multi-voltage electrostatic discharge protection | |
| CN103795026B (en) | Input stage esd protection circuit | |
| JP5827382B2 (en) | Output power supply protection device and operation method thereof | |
| CN107565537B (en) | A kind of esd protection circuit and method | |
| KR20160104638A (en) | High-energy ignition coil | |
| US20090086394A1 (en) | Protection circuit and semiconductor integrated circuit | |
| CN106655109B (en) | Protection circuit against input over-voltage applied to integrated circuit | |
| CN109580997A (en) | Test fixture, test device and test macro | |
| CN202978213U (en) | Power supply overvoltage protection circuit | |
| CN104319271A (en) | CDM (Charged-Device-Model) electrostatic protection circuit | |
| CN108400578B (en) | High-voltage ESD protection circuit | |
| CN203607841U (en) | Overvoltage protection circuit used for high-voltage integrated circuit | |
| CN101682321A (en) | Circuit, integrated circuit and method for dissipating heat from an inductive load | |
| CN107979281A (en) | A kind of input voltage division module and overvoltage protection switch | |
| CN205594492U (en) | Electric circuit | |
| CN108803766B (en) | Controller operating voltage management system | |
| CN207819765U (en) | A kind of booster circuit | |
| CN105143662B (en) | Drive control circuit, and ignition device for internal combustion engine | |
| CN203301144U (en) | Vehicle-mounted power supply surge protection circuit | |
| CN100444377C (en) | Static discharge protection circuit and method for providing semiconductor circuit | |
| CN207166472U (en) | A kind of IGBT drive circuit | |
| CN207680799U (en) | A kind of recoil absorbing circuit of the pulse power | |
| CN203415942U (en) | Fault signal processing circuit | |
| CN108879633A (en) | A kind of esd protection circuit and method | |
| CN102157520A (en) | Electrostatic discharge protection circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 510663 8th floor, building C2, Chuangxin building, No. 182, Kexue Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Guangzhou Huizhi Microelectronics Co.,Ltd. Address before: 510663 unit c3-802, innovation building, 182 science Avenue, Science City, Guangzhou high tech Industrial Development Zone, Guangdong Province Patentee before: SMARTER MICROELECTRONICS (GUANG ZHOU) Co.,Ltd. |
|
| CP03 | Change of name, title or address |