CN107565537B - A kind of esd protection circuit and method - Google Patents

A kind of esd protection circuit and method Download PDF

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Publication number
CN107565537B
CN107565537B CN201710924098.3A CN201710924098A CN107565537B CN 107565537 B CN107565537 B CN 107565537B CN 201710924098 A CN201710924098 A CN 201710924098A CN 107565537 B CN107565537 B CN 107565537B
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China
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semiconductor
oxide
metal
esd
voltage
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CN201710924098.3A
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Chinese (zh)
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CN107565537A (en
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苏强
杨雪
周慧祥
李平
金海鹏
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广州慧智微电子有限公司
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Abstract

The embodiment of the invention provides a kind of esd protection circuit and method, protecting circuit includes: bleeder circuit, for the voltage of DC power supply to be divided to and exported the bleeder circuit of voltage signal after partial pressure;Charge discharges branch, for that need to carry out the device work of ESD protection using voltage signal driving after partial pressure, and will be released to ground nodes by positive ESD electric current when there is forward direction ESD, and discharge reversed ESD when there is reversed ESD;Wherein, the value that need to carry out the driving voltage of the device of ESD protection is less than the voltage value of DC power supply;In this way, high power supply voltage is converted to low-voltage by bleeder circuit, it is ensured that the normal operation of the device of low pressure process, and positive ESD is at least discharged into branch by charge and is discharged, it is ensured that the device under low pressure process can bear positive ESD;In addition, the metal-oxide-semiconductor that need to be carried out in the device of ESD protection can prevent metal-oxide-semiconductor from damaging under high power supply voltage using the device that can bear high power supply voltage between source-drain electrode.

Description

A kind of esd protection circuit and method

Technical field

The present invention relates to ESD protection technique more particularly to a kind of Electro-static Driven Comb (Electro-Static discharge, ESD circuit and method) are protected.

Background technique

ESD is a kind of common near field Harm and control, can form high voltage, transient high-current causes to damage to circuit devcie. To prevent the high current high voltage of this moment from causing to damage to device, need to design esd protection circuit inside circuit.So And by under low pressure process capacitor and the devices (device for being adapted to low supply voltage) such as transistor be applied to high power supply voltage When scene, corresponding esd protection circuit is also lacked at present, causes to generate the device failure occurred because of situations such as ESD.

Summary of the invention

To solve existing technical problem, the embodiment of the present invention provides a kind of esd protection circuit and method, Ke Yi By under low pressure process capacitor and the devices such as transistor be applied to high power supply voltage scene when, corresponding esd protection circuit is provided, The device under low pressure process is set to bear the ESD generated by high power supply voltage.

In order to achieve the above objectives, the technical solution of the embodiment of the present invention is achieved in that

The embodiment of the present invention provides a kind of Electro-static Driven Comb esd protection circuit, and the protection circuit accesses DC power supply, described Protection circuit include:

Bleeder circuit, for the voltage of DC power supply is divided and is exported partial pressure after voltage signal bleeder circuit;

Charge discharges branch, for that need to carry out the device work of ESD protection using voltage signal driving after partial pressure, and is going out Ground nodes will be released to by positive ESD electric current when existing forward direction ESD;Wherein, the driving electricity of the device that ESD protection need to be carried out The value of pressure is less than the voltage value of the DC power supply.

The embodiment of the present invention also provides a kind of Electro-static Driven Comb ESD guard method, which comprises

The voltage of DC power supply is divided, and exports voltage signal after partial pressure;

The device work of ESD protection need to be carried out using voltage signal driving after partial pressure, and will be by just when there is forward direction ESD Ground nodes are released to ESD electric current;Wherein, the value of the driving voltage of the device that need to carry out ESD protection is less than described straight The voltage value in galvanic electricity source.

In a kind of esd protection circuit provided in an embodiment of the present invention and method, the protection circuit accesses DC power supply, institute State protection circuit include: bleeder circuit, for the voltage of DC power supply is divided and is exported partial pressure after voltage signal point Volt circuit;Charge discharges branch, for that need to carry out the device work of ESD protection using voltage signal driving after partial pressure, and is going out Ground nodes will be released to by positive ESD electric current when existing forward direction ESD, when reversed ESD to discharge temporarily by its parasitic diode Charge;Wherein, it is (small to be no more than the maximum voltage that device can be born for the value of the driving voltage of the device that need to carry out ESD protection In the voltage value of the DC power supply);In this way, high power supply voltage is on the one hand converted to low-voltage by bleeder circuit, it is ensured that On the other hand positive ESD is at least discharged branch by charge and released by the capacitor of low pressure process and the normal operation of metal-oxide-semiconductor It puts, it is ensured that the device under low pressure process can bear positive ESD.

Detailed description of the invention

Fig. 1 is a schematic diagram of the esd protection circuit in the embodiment of the present invention;

Fig. 2 is the flow chart of Electro-static Driven Comb of embodiment of the present invention ESD guard method;

Fig. 3 is another schematic diagram of the esd protection circuit in the embodiment of the present invention.

Specific embodiment

The present invention is further described in detail below with reference to the accompanying drawings and embodiments.It should be appreciated that described herein Specific embodiment is only used to explain the present invention, is not intended to limit the present invention.

The embodiment of the invention discloses a kind of esd protection circuit and methods, can be for applied to high power supply voltage application The low pressure process device of scene provides ESD protection, and here, low pressure process device is commonly used in indicate at low supply voltages can be with The device of normal work, this device be directly accessed high power supply voltage may generating device damage situations such as, the present invention is real It applies in example, low pressure process device includes but is not limited to capacitor, metal-oxide-semiconductor (Metal Oxide Semiconductor) field effect transistor (abbreviation metal-oxide-semiconductor) etc.;It should be noted that the low supply voltage of above-mentioned record and height Supply voltage is opposite concept, for example, low pressure process device is the device that can be worked normally under 2.5V supply voltage, when When supply voltage is more than 2.5V, it is believed that power supply is high power supply voltage;It should be pointed out that merely illustrate low herein Process devices and high voltage voltage are pressed, according to the actual situation, low pressure process device can also be normal under other supply voltages The device of work, high power supply voltage can also be configured with actual conditions.

Low pressure process device and application scenarios based on above-mentioned record, propose following specific embodiment.

First embodiment

Fig. 1 is a schematic diagram of the esd protection circuit in the embodiment of the present invention, as shown in Figure 1, the esd protection circuit DC power supply 101 is accessed, the protection circuit includes:

Bleeder circuit 102, for the voltage of DC power supply is divided and is exported partial pressure after voltage signal partial pressure electricity Road;

Charge discharges branch 103, for the device work of ESD protection need to be carried out using voltage signal driving after partial pressure, and Ground nodes will be released to by positive ESD electric current when there is forward direction ESD (by positive ESD bring positive charge);Wherein, institute Voltage value of the value of the driving voltage of device of ESD protection less than the DC power supply need to be carried out by stating, and be no more than corresponding device The maximum voltage that can be born.

Here, charge discharges branch 103, can be also used for coming reversed two pole temporarily by power supply to ground in reversed ESD Pipe discharges charge, this backward dioded can be various forms of diodes, for example, it may be the parasitism of positive protection device Diode, positive protection device value here need to carry out the device of ESD protection.

Here, the device that need to carry out ESD protection comprises at least one of the following: capacitor, metal-oxide-semiconductor.

Illustratively, voltage signal after partial pressure is accessed in the one end that need to carry out at least one capacitor of the device of ESD protection, separately One end connects ground nodes.

Optionally, the value that need to carry out the driving voltage of the device of ESD protection is not more than the pressure voltage or described of the capacitor The value of the grid maximum voltage of metal-oxide-semiconductor.

The quantity of the capacitor of ESD protective device and metal-oxide-semiconductor is not limited in the embodiment of the present invention, ESD need to be carried out The quantity of capacitor and metal-oxide-semiconductor in the device of protection can be determined according to practical application request;Optionally, for needing to carry out The physical circuit connection relationship of the device of ESD protection can also carry out flexible setting according to practical application request.

It is understood that the pressure voltage of capacitor is for indicating the maximum voltage value that capacitor can be born;In the grid of metal-oxide-semiconductor When pole tension is more than the grid maximum voltage of metal-oxide-semiconductor, it may cause MOS and be not normally functioning, it should be noted that above-mentioned right In the explanation of the grid maximum voltage of metal-oxide-semiconductor, only the numerical value of voltage is illustrated, it is not intended that voltage is positive and negative.

Obviously, it can be seen that when the pressure voltage of capacitor is less than the direct current power source voltage, the maximum electricity of the grid of metal-oxide-semiconductor When pressure is less than the direct current power source voltage as, capacitor and metal-oxide-semiconductor can be seen to the low pressure process under high power supply voltage scene Device.

Illustratively, the parameter of bleeder circuit 102 can be according to device in direct current power source voltage and charge release branch Normal working voltage be configured, for example, direct current power source voltage is 6V, and metal-oxide-semiconductor and capacitor in charge release branch Normal working voltage is 3V, then set bleeder circuit must ensure that its output voltage is 3V, to guarantee that charge discharges branch The normal operation of middle device.

In actual implementation, charge release branch 103 may include:

Voltage signal after partial pressure is connected to the first branch that need to carry out the device of ESD protection;And

The device that need to carry out ESD protection is connected to the second branch of ground nodes.

For example, the first branch and second branch may each comprise the conducting wire for circuit connection, the first branch and second Road may each comprise the devices such as resistance.

As can be seen that in the esd protection circuit of above-mentioned record, on the one hand, by the way that suitable bleeder circuit is arranged, can incite somebody to action High power supply voltage is converted to the low-voltage of the proper device operation in suitable charge release branch, it is ensured that the capacitor of low pressure process and The normal operation of metal-oxide-semiconductor, on the other hand, positive ESD at least can be discharged branch by charge by charge release branch to be released It puts, it is ensured that the device under low pressure process can bear positive ESD.

Optionally, the protection circuit of above-mentioned record can also include for reversed ESD electric current of releasing (i.e. by reversed ESD band Come negative electrical charge) diode (Fig. 1 is not shown), that is to say, that for reversed ESD electric current, can be discharged by diode;? In one optional example, the plus earth of diode, cathode connects the DC power supply of above-mentioned record;In this way, can be easily Releasing reverse ESD electric current.

It particularly, include metal-oxide-semiconductor in the charge release branch of above-mentioned record, if any one in charge release branch The source electrode and drain electrode of metal-oxide-semiconductor is separately connected DC power supply and ground, then additional diode can be not provided with;This is because each All there is parasitic diode in metal-oxide-semiconductor, at this point it is possible to be released reversed ESD electric current by the parasitic diode of corresponding metal-oxide-semiconductor.

In actual implementation, when need to carry out the device of ESD protection includes at least one metal-oxide-semiconductor, in order to ensure metal-oxide-semiconductor It works normally, one in the source electrode and drain electrode of metal-oxide-semiconductor can be grounded, by another company in the source electrode and drain electrode of metal-oxide-semiconductor Connect DC power supply;For example, the source electrode of metal-oxide-semiconductor or drain electrode can be directly grounded, it can also be on the source electrode of metal-oxide-semiconductor or drain electrode and ground Between series resistance;The source electrode of metal-oxide-semiconductor or drain electrode can be directly connected to DC power supply, can also metal-oxide-semiconductor source electrode or drain electrode with Series resistance between DC power supply.

It is normal in order to ensure metal-oxide-semiconductor as can be seen that the need of above-mentioned record carry out the device of ESD protection when including metal-oxide-semiconductor Operation, the drain-source breakdown voltage (pressure voltage) that need to carry out each metal-oxide-semiconductor in the device of ESD protection are greater than the DC power supply Voltage;Here, the drain-source breakdown voltage of metal-oxide-semiconductor refers to one timing of metal-oxide-semiconductor gate source voltage, and metal-oxide-semiconductor normal work can bear Maximum drain-source voltage.

Since the drain-source breakdown voltage of lateral diffusion metal oxide semiconductor (LDMOS) pipe is usually larger, show at one In example, need to carry out at least one metal-oxide-semiconductor in each metal-oxide-semiconductor in the device of ESD protection can be LDMOS pipe particularly need to be into Each metal-oxide-semiconductor in the device of row ESD protection is LDMOS pipe.It should be noted that merely illustrate needs to carry out here The type of each metal-oxide-semiconductor in the device of ESD protection, the metal-oxide-semiconductor that being not intended to limit need to carry out in the device of ESD protection must be LDMOS pipe, for example, need to carry out the metal-oxide-semiconductor in the device of ESD protection can also be that other source-drain electrodes can bear the device of high voltage Part.

As can be seen that using in esd protection circuit described in second embodiment of the invention, it is ensured that ESD guarantor need to be carried out The source-drain electrode of metal-oxide-semiconductor in the device of shield can bear biggish voltage difference, guarantee that metal-oxide-semiconductor will not puncture because of high voltage.

Optionally, the number that need to carry out the metal-oxide-semiconductor in the device of ESD protection can be 1, be also possible at least two, It is illustrated separately below by two specific examples.

Example 1:

Need to carry out the metal-oxide-semiconductor in the device of ESD protection is the 1st metal-oxide-semiconductor, and the grid of the 1st metal-oxide-semiconductor is described for accessing Voltage signal after partial pressure.

Optionally, the grid of the 1st metal-oxide-semiconductor can be directly connected to the output end of bleeder circuit, can also connect other Device (such as resistance or capacitor) connects the output end of bleeder circuit afterwards.

In actual implementation, one in the source electrode and drain electrode of the 1st metal-oxide-semiconductor is directly connected to DC power supply, or is going here and there DC power supply is connected after connection resistance, another in the source electrode and drain electrode of the 1st metal-oxide-semiconductor is directly connected to DC power supply, Huo Zhe It is grounded after series resistance;The connection relationship of the source electrode and drain electrode of 1st metal-oxide-semiconductor in circuit needs true according to practical application request It is fixed.

Example 2:

The device that need to carry out ESD protection includes the cascade circuit as made of the 1st metal-oxide-semiconductor to n-th metal-oxide-semiconductor cascade, institute The grid for stating the 1st metal-oxide-semiconductor is used to access voltage signal after the partial pressure, and N is the natural number greater than 1.

In actual implementation, one in the source electrode and drain electrode of the 1st metal-oxide-semiconductor is directly connected to DC power supply, or is going here and there DC power supply is connected after connection resistance, another in the source electrode and drain electrode of the 1st metal-oxide-semiconductor is directly connected to DC power supply, Huo Zhe It is grounded after series resistance;The connection relationship of the source electrode and drain electrode of 1st metal-oxide-semiconductor in circuit needs true according to practical application request It is fixed.

Work as n=2, when 3 ... N, the connection relationship of the source electrode and drain electrode of n-th of metal-oxide-semiconductor in circuit and the 1st metal-oxide-semiconductor phase Together, which is not described herein again.

It, can also be in each metal-oxide-semiconductor in the device that need to carry out ESD protection for certain specific practical application requests Resistance is connected between grid and ground, for example, the resistance between grid and ground has electric current process when each metal-oxide-semiconductor is connected, by It is cascade connection between metal-oxide-semiconductor, then next stage metal-oxide-semiconductor can be made to be connected.

Optionally, bleeder circuit is resistor voltage divider circuit, is not carried out here to the resistance number in resistor voltage divider circuit It limits, the resistance number in resistor voltage divider circuit can be denoted as M, and M is the natural number greater than 1.

It is understood that resistance can inevitably have the relatively small parasitic capacitance of capacitance in circuit technology, When positive esd event arrives (i.e. appearance forward direction ESD electric current), bleeder circuit is caused to the parasitic capacitance charging of resistance in charge Output voltage be not ideal output voltage when there is high-frequency signal influence;For example, one of the circuit of an electric resistance partial pressure The ideal output voltage in resistance both ends is the 1/3 of direct current power source voltage, due to the parasitic capacitance of the resistance, so that the resistance both ends Actual output voltage be not the 1/3 of direct current power source voltage.

In order to solve the above-mentioned technical problem, in 1 example, each resistance also parallel connection of resistor voltage divider circuit is connected to electricity Hold, is greater than or equal to the i-th of the resistor voltage divider circuit with the capacitance of the capacitor of i-th of resistor coupled in parallel of resistor voltage divider circuit K times of the capacitance of the parasitic capacitance of a resistance, K are the positive number for being greater than 1 of setting, and it is the electric resistance partial pressure electricity that i, which takes 1 to M, M, The resistance number on road;

Here, the value of K can be according to being empirically arranged, such as K is greater than 5, then, pass through resistor voltage divider circuit Each resistance setting larger capacitance value in parallel therewith capacitor, it can be ensured that the output voltage of the circuit of electric resistance partial pressure is in high frequency Still reach practical application request under the influence of signal, it is ensured that charge discharges the normal operation of the device in branch.

For the esd protection circuit of above-mentioned record, the course of work can be illustrated using Electro-static Driven Comb ESD guard method.

Fig. 2 is the flow chart of Electro-static Driven Comb of embodiment of the present invention ESD guard method, as shown in Fig. 2, the process can wrap It includes:

Step 201: the voltage of DC power supply being divided, and exports voltage signal after partial pressure;

Step 202: the device work of ESD protection need to be carried out using voltage signal driving after partial pressure, and forward direction ESD occurring When ground nodes will be released to by positive ESD electric current;Wherein, the value of the driving voltage of the device that need to carry out ESD protection is small In the voltage value of the DC power supply, and it is no more than the maximum voltage that device can be born.

In addition, coming to discharge charge temporarily by the backward dioded of power supply to ground in reversed ESD, this backward dioded can To be various forms of diodes, for example, it may be the parasitic diode of positive protection device.

Optionally, the device that need to carry out ESD protection includes at least one of the following: capacitor, metal-oxide-semiconductor.

Second embodiment

In order to more embody the purpose of the present invention, on the basis of the above embodiment of the present invention, carry out further It illustrates.

Fig. 3 is another schematic diagram of the esd protection circuit of the embodiment of the present invention, as shown in figure 3, in esd protection circuit Resistor voltage divider circuit include first resistor R1 and second resistance R2, first resistor R1 and second resistance R2 are parallel with first respectively Capacitor C1 and the second capacitor C2;It includes third capacitor C3a, the 4th capacitor C3b, the first metal-oxide-semiconductor M1, second that charge, which discharges branch, Metal-oxide-semiconductor M2,3rd resistor Rg1 and the 4th resistance Rg2, wherein one end of third capacitor C3a connects DC power supply Vcc, the other end One end of the 4th capacitor C3b is connected, 3rd resistor Rg1 connects between the other end and ground of the 4th capacitor C3b;First metal-oxide-semiconductor M1 Grid connect the other end of the 4th capacitor C3b, a connection DC power supply Vcc in the source electrode and drain electrode of the first metal-oxide-semiconductor M1, Another is separately connected the grid of the second metal-oxide-semiconductor M2 and one end of the 4th resistance Rg2, the other end ground connection of the 4th resistance Rg2;The A connection DC power supply Vcc in the source electrode and drain electrode of two metal-oxide-semiconductor M2, another ground connection, it can be seen that the first metal-oxide-semiconductor M1 It is mutually cascaded with the second metal-oxide-semiconductor M2;

In addition, esd protection circuit further includes the 5th resistance R3, one end of the 5th resistance R3 connects first resistor R1 and second The common node of resistance R2, the other end connect the common node of third capacitor C3a and the 4th capacitor C3b;Esd protection circuit also wraps Diode D1, the plus earth of diode D1 are included, cathode connects DC power supply Vcc.

By taking the application of the capacitor of 2.5V low pressure process and metal-oxide-semiconductor under 5V supply voltage as an example;In Fig. 2, pass through the first electricity Supply voltage is divided the DC voltage so that third capacitor C3a and the 4th both ends capacitor C3b by resistance R1 and second resistance R2 Difference is the half of supply voltage, and to meet process requirements, the resistance value of first resistor R1 and second resistance R2 are equal at this time.

Due in integrated circuit technology, resistance is always inevitable that there are the relatively small parasitic capacitances of capacitance;When Positive esd event comes interim, and charge is to the output voltage of the dead resistance charging of resistance with leading to electric resistance partial pressure circuit in high frequency It is not the half of supply voltage in situation under effect of signals;Therefore, can distinguish on first resistor R1 and second resistance R2 Two capacitances in parallel capacitor big with respect to R1/R2 parasitic capacitance: first capacitor C1 and the second capacitor C2, at this point, first resistor R1 Influence with the parasitic capacitance of second resistance R2 can be ignored, and the capacitance of first capacitor C1 and the second capacitor C2 approach or phase Deng to guarantee the output voltage of resistor voltage divider circuit in the case where there is high-frequency signal influence still for the half of supply voltage.

In the esd protection circuit specific works of above-mentioned record, when positive ESD signal carrys out interim, third capacitor C3a and the The voltage of four capacitor C3b charging, the first transistor M1 grid rises, the first metal-oxide-semiconductor M1 conducting;After first metal-oxide-semiconductor M1 conducting, the It has electric current on four resistance Rg2 to flow through, therefore the grid voltage of the second metal-oxide-semiconductor M2 can rise, the second metal-oxide-semiconductor M2 conducting;At this time The charge of positive ESD can be discharged into ground by the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2.Wherein, on guarantee 3rd resistor Rg1 There are enough electric currents that the first metal-oxide-semiconductor M1 is connected, the resistance value of the 5th resistance R3 is significantly larger than Rg1, avoids signal by the Then five resistance R3 are discharged into ground by the resistance and capacitor (i.e. second resistance R2 and the second capacitor C2) on the left side.

As can be seen that resistor voltage divider circuit makes the gate source voltage of the first metal-oxide-semiconductor M1 for the half (2.5V) of supply voltage, To meet technique requirement;The first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2 are managed using LDMOS simultaneously, and source and drain can bear biggish electricity Pressure punctures to avoid the source and drain of the device due to caused by high power supply voltage.

In addition, charge can be discharged by diode D1 when reversed esd event comes temporarily;Here, it can not also additionally set Diode D1 is set, this is because the parasitic diode in the second metal-oxide-semiconductor also can produce effect identical with diode D1.

As can be seen that making third capacitor C3a or the 4th capacitor C3b by electric resistance partial pressure in fourth embodiment of the invention The voltage difference at both ends is reduced to the half of direct current power source voltage, hereby it is ensured that in the case where high power supply voltage, low pressure process electricity Appearance will not puncture;And when metal-oxide-semiconductor (including the first transistor M1 and second transistor M2) uses LDMOS pipe, so that metal-oxide-semiconductor source Leakage can tolerate biggish voltage difference, hereby it is ensured that metal-oxide-semiconductor will not puncture because of high voltage.

It should be noted that esd protection circuit shown in Fig. 3 is only an example of esd protection circuit of the invention; According to the actual situation, it can be directed to the circuit of Fig. 3, the quantity of change resistance, capacitor and metal-oxide-semiconductor can also be by two poles in Fig. 3 Pipe D1 removes, according to practical application request, can by different resistance serial or parallel connections, alternatively, by different capacitor series connection or It is in parallel.

The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any In the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of by those familiar with the art, all answers It is included within the scope of the present invention.Therefore, protection scope of the present invention should be with the scope of protection of the claims It is quasi-.

Claims (11)

1. a kind of Electro-static Driven Comb esd protection circuit, which is characterized in that the protection circuit accesses DC power supply, the protection electricity Road includes:
Bleeder circuit, for the voltage of DC power supply is divided and is exported partial pressure after voltage signal bleeder circuit;
Charge discharges branch, for that need to carry out the device work of ESD protection using voltage signal driving after partial pressure, and is occurring just Ground nodes will be released to by positive ESD electric current when to ESD;Wherein, the driving voltage of the device that ESD protection need to be carried out Value is less than the voltage value of the DC power supply;
The charge release branch specifically includes:
The first branch is connected to the device that need to carry out ESD protection for voltage signal after dividing;And
Second branch, for the device that need to carry out ESD protection to be connected to ground nodes;
The metal-oxide-semiconductor that need to be carried out in the device of ESD protection be the 1st metal-oxide-semiconductor, the 1st metal-oxide-semiconductor grid access described in Voltage signal after partial pressure, an access DC power supply in the source electrode and drain electrode of the 1st metal-oxide-semiconductor, the 1st metal-oxide-semiconductor Source electrode and drain electrode in another connection ground nodes;Alternatively,
The metal-oxide-semiconductor that need to be carried out in the device of ESD protection includes the 1st metal-oxide-semiconductor to n-th metal-oxide-semiconductor, the 1st metal-oxide-semiconductor It is mutually cascaded to n-th metal-oxide-semiconductor, the grid of the 1st metal-oxide-semiconductor accesses voltage signal after the partial pressure, described to carry out ESD An access DC power supply in the source electrode and drain electrode of each metal-oxide-semiconductor in the device of protection, the device that ESD protection need to be carried out Another connection ground nodes in the source electrode and drain electrode of each metal-oxide-semiconductor in part, N is the natural number greater than 1.
2. protection circuit according to claim 1, which is characterized in that the device that need to carry out ESD protection includes following It is at least one: capacitor, Metal Oxide Semiconductor Field Effect Transistor metal-oxide-semiconductor.
3. protection circuit according to claim 2, which is characterized in that the driving electricity of the device that ESD protection need to be carried out The value of pressure is no more than the value of the pressure voltage of the capacitor or the grid maximum voltage of the metal-oxide-semiconductor.
4. protection circuit according to claim 2, which is characterized in that the device that need to carry out ESD protection includes at least When one metal-oxide-semiconductor, the drain-source breakdown voltage that need to carry out each metal-oxide-semiconductor in the device of ESD protection is greater than the direct current The voltage in source.
5. protection circuit according to claim 4, which is characterized in that described to carry out in the device of ESD protection at least One metal-oxide-semiconductor is lateral diffusion metal oxide semiconductor LDMOS pipe.
6. protection circuit according to claim 2, which is characterized in that at least the one of the device that ESD protection need to be carried out Voltage signal after one end access partial pressure of a capacitor, the other end connect ground nodes.
7. protection circuit according to claim 1, which is characterized in that the protection circuit further include: reversed for releasing The diode of ESD electric current.
8. protection circuit according to claim 1, which is characterized in that the bleeder circuit is resistor voltage divider circuit.
9. protection circuit according to claim 8, which is characterized in that each resistance of the resistor voltage divider circuit is also in parallel It is connected to capacitor, is greater than or equal to the electric resistance partial pressure electricity with the capacitance of the capacitor of i-th of resistor coupled in parallel of resistor voltage divider circuit K times of the capacitance of the parasitic capacitance of i-th of the resistance on road, K are the positive number greater than 1, and it is the electric resistance partial pressure electricity that i, which takes 1 to M, M, The resistance number on road.
10. a kind of Electro-static Driven Comb ESD guard method, which is characterized in that the described method includes:
The voltage of DC power supply is divided, and exports voltage signal after partial pressure;
The device work of ESD protection need to be carried out using voltage signal driving after partial pressure, and will be by forward direction when there is forward direction ESD ESD electric current is released to ground nodes;Wherein, the value of the driving voltage of the device that need to carry out ESD protection is less than the direct current The voltage value of power supply;
The device work that ESD protection need to be carried out using voltage signal driving after partial pressure, and will be by just when there is forward direction ESD The step of being released to ground nodes to ESD electric current, specifically includes:
Voltage signal after partial pressure is connected to the device that need to carry out ESD protection by the first branch;And pass through second The device that need to carry out ESD protection is connected to ground nodes by road;
The metal-oxide-semiconductor that need to be carried out in the device of ESD protection be the 1st metal-oxide-semiconductor, the 1st metal-oxide-semiconductor grid access described in Voltage signal after partial pressure, an access DC power supply in the source electrode and drain electrode of the 1st metal-oxide-semiconductor, the 1st metal-oxide-semiconductor Source electrode and drain electrode in another connection ground nodes;Alternatively,
The metal-oxide-semiconductor that need to be carried out in the device of ESD protection includes the 1st metal-oxide-semiconductor to n-th metal-oxide-semiconductor, the 1st metal-oxide-semiconductor It is mutually cascaded to n-th metal-oxide-semiconductor, the grid of the 1st metal-oxide-semiconductor accesses voltage signal after the partial pressure, described to carry out ESD An access DC power supply in the source electrode and drain electrode of each metal-oxide-semiconductor in the device of protection, the device that ESD protection need to be carried out Another connection ground nodes in the source electrode and drain electrode of each metal-oxide-semiconductor in part, N is the natural number greater than 1.
11. according to the method described in claim 10, it is characterized in that, the device that ESD protection need to be carried out include with down toward One item missing: capacitor, Metal Oxide Semiconductor Field Effect Transistor metal-oxide-semiconductor.
CN201710924098.3A 2017-09-29 2017-09-29 A kind of esd protection circuit and method CN107565537B (en)

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CN108512207B (en) * 2018-04-18 2020-01-24 矽力杰半导体技术(杭州)有限公司 Electrostatic protection circuit
CN108879633B (en) * 2018-06-07 2020-06-16 广州慧智微电子有限公司 ESD protection circuit and method

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CN106786463A (en) * 2017-01-04 2017-05-31 上海华虹宏力半导体制造有限公司 High pressure ESD protects triggers circuit
CN107403796A (en) * 2016-05-20 2017-11-28 中芯国际集成电路制造(上海)有限公司 High pressure ESD protection circuits

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CN102315633A (en) * 2010-07-06 2012-01-11 瑞昱半导体股份有限公司 Electrostatic protection circuit
CN107403796A (en) * 2016-05-20 2017-11-28 中芯国际集成电路制造(上海)有限公司 High pressure ESD protection circuits
CN106786463A (en) * 2017-01-04 2017-05-31 上海华虹宏力半导体制造有限公司 High pressure ESD protects triggers circuit

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