CN112864234A - Igbt功率器件 - Google Patents

Igbt功率器件 Download PDF

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CN112864234A
CN112864234A CN201911183421.1A CN201911183421A CN112864234A CN 112864234 A CN112864234 A CN 112864234A CN 201911183421 A CN201911183421 A CN 201911183421A CN 112864234 A CN112864234 A CN 112864234A
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floating gate
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power device
igbt power
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CN112864234B (zh
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龚轶
刘磊
刘伟
袁愿林
王鑫
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Suzhou Dongwei Semiconductor Co ltd
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Priority to PCT/CN2019/123759 priority patent/WO2021103113A1/zh
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Abstract

本发明实施例提供的一种IGBT功率器件，包括位于两个p型体区和两个所述p型体区之间的n型漂移区之上的栅介质层，位于所述栅介质层之上的n型浮栅；位于所述栅介质层和所述n型浮栅之上的栅极，且在横向上所述栅极覆盖所述n型浮栅的两侧侧壁；介于所述栅极与所述n型浮栅之间的绝缘介质层；位于所述栅介质层中的第一开口，所述n型浮栅通过所述第一开口与其中一个所述p型体区接触形成p‑n结二极管；位于所述栅介质层中的第二开口，所述n型浮栅通过所述第二开口与另一个所述p型体区接触形成p‑n结二极管。本发明能够提高IGBT功率器件的反向恢复速度。

Description

IGBT功率器件
技术领域
本发明属于IGBT功率器件技术领域，特别是涉及一种反向恢复速度快的IGBT功率器件。
背景技术
相关技术的IGBT(绝缘栅双极型晶体管)功率器件的剖面结构示意图如图1所示，包括底部间隔设置的p型集电极区31和n型集电极区3，p型集电极区31和n型集电极区3通过集电极金属接触层70接集电极电压；位于p型集电极区31和n型集电极区3之上的n型场截止区32，位于n型场截止区32之上的n型漂移区30，位于n型漂移区30顶部的至少两个p型体区33；在每个p型体区33内设有n型发射极区34，n型发射极区34和p型体区33通过发射极金属接触层47接发射极电压，p型体区接触区38用于降低p型体区34的接触电阻；用于控制IGBT功率器件的电流沟道的开启和关断的栅介质层35和栅极36，栅极36和发射极金属接触层47通过绝缘介质层50相绝缘，绝缘介质层50为层间绝缘介质层。
相关技术的IGBT功率器件在关断时，反向电流会从发射极经IGBT功率器件中寄生的体二极管流至集电极，此时体二极管的电流存在注入少子载流子现象，而这些少子载流子在IGBT功率器件再一次开启时进行反向恢复，导致较大的反向恢复电流，反向恢复时间长。
发明内容
有鉴于此，本发明的目的是提供一种反向恢复速度快的IGBT功率器件，以解决相关技术中的IGBT功率器件因少子载流子注入问题造成的反向恢复时间长的技术问题。
本发明实施例提供的一种IGBT功率器件，包括：
n型集电极区和p型集电极区，位于所述n型集电极区和所述p型集电极区之上的n型漂移区，位于所述n型漂移区顶部的至少两个p型体区，两个所述p型体区被所述n型漂移区隔离；位于每个所述p型体区内的n型发射极区；
位于两个所述p型体区和两个所述p型体区之间的n型漂移区之上的栅介质层，位于所述栅介质层之上的n型浮栅；位于所述栅介质层和所述n型浮栅之上的栅极，且在横向上所述栅极覆盖所述n型浮栅的两侧侧壁；介于所述栅极与所述n型浮栅之间的绝缘介质层；
位于所述栅介质层中的第一开口，所述n型浮栅通过所述第一开口与其中一个所述p型体区接触形成p-n结二极管；
位于所述栅介质层中的第二开口，所述n型浮栅通过所述第二开口与另一个所述p型体区接触形成p-n结二极管。
可选的，所述n型浮栅在所述栅介质层之上被绝缘层分隔为第一n型浮栅和第二n型浮栅，所述第一n型浮栅通过所述第一开口与其中一个所述p型体区接触形成p-n结二极管，所述第二n型浮栅通过所述第二开口与另一个所述p型体区接触形成p-n结二极管。
可选的，还包括位于所述n型集电极区和所述p型集电极区之上的n型场截止区，所述n型场截止区位于所述n型漂移区下方。
可选的，所述第一开口位于所述n型浮栅下方且靠近所述n型漂移区设置。
可选的，所述第二开口位于所述n型浮栅下方且靠近所述n型漂移区设置。
本发明实施例提供的一种IGBT功率器件，在正向阻断状态和正向开启时具有高阈值电压；在反向导通时具有低阈值电压，使得IGBT功率器件在低栅极电压(或0V电压)下导通，从而能够增加流过IGBT功率器件的电流沟道的反向电流，减少流过IGBT功率器件中寄生的体二极管的电流，提高IGBT功率器件的反向恢复速度。
附图说明
为了更加清楚地说明本发明示例性实施例的技术方案，下面对描述实施例中所需要用到的附图做一简单介绍。
图1是相关技术的一种IGBT功率器件的剖面结构示意图；
图2是本发明提供的一种IGBT功率器件的第一个实施例的剖面结构示意图；
图3是本发明提供的一种IGBT功率器件的第二个实施例的剖面结构示意图。
具体实施方式
以下将结合本发明实施例中的附图，通过具体实施方式，完整地描述本发明的技术方案。同时，为清楚地说明本发明的具体实施方式，说明书附图中所列示意图，放大了本发明所述的层和区域的尺寸，且所列图形大小并不代表实际尺寸。说明书中所列实施例不应仅限于说明书附图中所示区域的特定形状，而是包括所得到的形状如制备引起的偏差等。
图2是本发明提供的一种IGBT功率器件的第一个实施例的剖面结构示意图，如图2所示，本发明实施例提供的一种IGBT功率器件包括n型集电极区20和p型集电极区10，位于n型集电极区20和p型集电极区10之上的n型场截止区29，位于n型场截止区29之上的n型漂移区21，位于n型漂移区21顶部的至少两个p型体区22，图2中仅示例性的示出了两个p型体区22。位于每个p型体区22内的n型发射极区23；
位于两个p型体区22和两个p型体区22之间的n型漂移区21之上的栅介质层24，位于栅介质层24之上的n型浮栅25；位于栅介质层24和n型浮栅25之上的栅极26，且在横向上栅极26覆盖n型浮栅25的两侧侧壁，从而IGBT功率器件的电流沟道的开启和关断被栅极26和n型浮栅25同时控制；介于栅极26与n型浮栅25之间的绝缘介质层27，栅极26通过电容耦合作用于n型浮栅25；绝缘介质层27通常为二氧化硅；
位于栅介质层24中的第一开口1，n型浮栅25通过第一开口1与其中一个p型体区22接触形成p-n结二极管；位于栅介质层24中的第二开口2，n型浮栅25通过第二开口2与另一个p型体区22接触形成p-n结二极管。
本发明实施例的IGBT功率器件，在正向阻断状态时，n型集电极区20和p型集电极区10被施加高电压，由n型浮栅25与p型体区22形成的p-n结二极管被正向偏置，n型浮栅25被充入正电荷，这使得n型浮栅25下面的电流沟道的阈值电压Vht1降低。n型浮栅25的电压与位于栅介质层24中的第一开口1和第二开口2的位置有关，可选的，第一开口1位于n型浮栅25下方且靠近n型漂移区21设置，同时，第二开口2位于n型浮栅25下方且靠近n型漂移区21设置，即第一开口1形成于位于上述一个p型体区22与n型漂移区21(两个p型体区22之间的n型漂移区21)之间的栅介质层24中，且第一开口1更靠近该部分n型漂移区21设置，同时，第二开口2形成于位于上述另一个p型体区22与n型漂移区21(两个p型体区22之间的n型漂移区21)之间的栅介质层24中，且第二开口2更靠近该部分n型漂移区21设置。这样n型浮栅25可以更容易的被写入正电荷，从而可以提高n型浮栅25的电压，降低n型浮栅25下面的电流沟道的阈值电压Vht1。
本发明实施例的IGBT功率器件在正向阻断状态和正向开启状态时，集电极-发射极电压Vce大于0V，n型浮栅25下面的电流沟道的阈值电压Vht1对整个IGBT功率器件的阈值电压Vth的影响很低，IGBT功率器件仍具有高阈值电压Vth。本发明实施例的IGBT功率器件在关断时，当源漏电压Vec大于0V时，n型浮栅25下面的电流沟道的阈值电压Vht1对整个IGBT功率器件的阈值电压Vth的影响很大，使得IGBT功率器件具有低阈值电压Vth，从而使IGBT的电流沟道在低栅极电压(或0V电压)下导通，从而能够增加流过IGBT功率器件的电流沟道电流，减少流过IGBT功率器件中寄生的体二极管的电流，提高IGBT功率器件的反向恢复速度。
图3是本发明提供的一种IGBT功率器件的第二个实施例的剖面结构示意图，该实施例的IGBT功率器件与图2所示的IGBT功率器件结构所不同的是，该实施例中，位于栅介质层24之上的n型浮栅被绝缘层250分隔为第一n型浮栅251和第二n型浮栅252，第一n型浮栅251通过第一开口1与其中一个p型体区22接触形成p-n结二极管，第二浮栅252通过第二开口2与另一个p型体区22接触形成p-n结二极管。将n型浮栅分隔为两个n型浮栅结构，在n型浮栅被充入正电荷后，可以使得n型浮栅的电压更高，从而IGBT功率器件在反向导通时，IGBT功率器件的电流沟道更容易被开启。
以上具体实施方式及实施例是对本发明技术思想的具体支持，不能以此限定本发明的保护范围，凡是按照本发明提出的技术思想，在本技术方案基础上所做的任何等同变化或等效的改动，均仍属于本发明技术方案保护的范围。

Claims (5)

1.一种IGBT功率器件，其特征在于，包括：
n型集电极区和p型集电极区，位于所述n型集电极区和所述p型集电极区之上的n型漂移区，位于所述n型漂移区顶部的至少两个p型体区，两个所述p型体区被所述n型漂移区隔离；位于每个所述p型体区内的n型发射极区；
位于两个所述p型体区和两个所述p型体区之间的n型漂移区之上的栅介质层，位于所述栅介质层之上的n型浮栅；位于所述栅介质层和所述n型浮栅之上的栅极，且在横向上所述栅极覆盖所述n型浮栅的两侧侧壁；介于所述栅极与所述n型浮栅之间的绝缘介质层；
位于所述栅介质层中的第一开口，所述n型浮栅通过所述第一开口与其中一个所述p型体区接触形成p-n结二极管；
位于所述栅介质层中的第二开口，所述n型浮栅通过所述第二开口与另一个所述p型体区接触形成p-n结二极管。
2.如权利要求1所述的IGBT功率器件，其特征在于，所述n型浮栅在所述栅介质层之上被绝缘层分隔为第一n型浮栅和第二n型浮栅，所述第一n型浮栅通过所述第一开口与其中一个所述p型体区接触形成p-n结二极管，所述第二n型浮栅通过所述第二开口与另一个所述p型体区接触形成p-n结二极管。
3.如权利要求1所述的IGBT功率器件，其特征在于，还包括位于所述n型集电极区和所述p型集电极区之上的n型场截止区，所述n型场截止区位于所述n型漂移区下方。
4.如权利要求1所述的IGBT功率器件，其特征在于，所述第一开口位于所述n型浮栅下方且靠近所述n型漂移区设置。
5.如权利要求1所述的IGBT功率器件，其特征在于，所述第二开口位于所述n型浮栅下方且靠近所述n型漂移区设置。
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