WO2021103113A1 - Igbt功率器件 - Google Patents

Igbt功率器件 Download PDF

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Publication number
WO2021103113A1
WO2021103113A1 PCT/CN2019/123759 CN2019123759W WO2021103113A1 WO 2021103113 A1 WO2021103113 A1 WO 2021103113A1 CN 2019123759 W CN2019123759 W CN 2019123759W WO 2021103113 A1 WO2021103113 A1 WO 2021103113A1
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Prior art keywords
type
floating gate
gate
region
dielectric layer
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PCT/CN2019/123759
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English (en)
French (fr)
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龚轶
刘磊
刘伟
袁愿林
王鑫
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苏州东微半导体有限公司
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Priority to JP2021551599A priority Critical patent/JP7177552B2/ja
Priority to US17/428,142 priority patent/US11721749B2/en
Publication of WO2021103113A1 publication Critical patent/WO2021103113A1/zh

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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0664—Vertical bipolar transistor in combination with diodes
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    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
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    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
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    • H01L29/0642—Isolation within the component, i.e. internal isolation
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    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
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    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7889—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane

Definitions

  • This application belongs to the technical field of IGBT power devices, and for example relates to an IGBT power device with a fast reverse recovery speed.
  • FIG. 1 A schematic cross-sectional structure diagram of a related art IGBT (insulated gate bipolar transistor) power device is shown in FIG. 1, including a p-type collector region 31 and an n-type collector region 3 arranged at intervals at the bottom, a p-type collector region 31 and The n-type collector region 3 is connected to the collector voltage through the collector metal contact layer 70; the n-type field stop region 32 above the p-type collector region 31 and the n-type collector region 3 is located between the n-type field stop region 32
  • the upper n-type drift region 30 is at least two p-type body regions 33 on the top of the n-type drift region 30; each p-type body region 33 is provided with an n-type emitter region 34, an n-type emitter region 34 and The p-type body region 33 is connected to the emitter voltage through the emitter metal contact layer 47.
  • the p-type body region contact region 38 is used to reduce the contact resistance of the p-type body region 34; it is used to control the turn-on and turn-off of the current channel of the IGBT power device.
  • the broken gate dielectric layer 35 and the gate 36, the gate 36 and the emitter metal contact layer 47 are insulated by the insulating dielectric layer 50, and the insulating dielectric layer 50 is an interlayer insulating dielectric layer.
  • the reverse current will flow from the emitter to the collector through the parasitic body diode in the IGBT power device.
  • the current of the body diode has the phenomenon of injecting minority carrier carriers, and these minority carrier carriers The current conducts reverse recovery when the IGBT power device is turned on again, resulting in a large reverse recovery current and a long reverse recovery time.
  • This application provides an IGBT power device with a fast reverse recovery speed to solve the technical problem of long reverse recovery time caused by the minority carrier injection problem of the IGBT power device in the related art.
  • an n-type collector region and a p-type collector region an n-type drift region above the n-type collector region and the p-type collector region, and at least two p-type regions on the top of the n-type drift region Body region, two of the p-type body regions are separated by the n-type drift region; an n-type emitter region located in each of the p-type body regions;
  • a gate dielectric layer located above the n-type drift region between the two p-type body regions and the two p-type body regions, an n-type floating gate located above the gate dielectric layer; A dielectric layer and a gate above the n-type floating gate, and in the lateral direction the gate covers both sidewalls of the n-type floating gate; between the gate and the n-type floating gate Insulating dielectric layer between;
  • the n-type floating gate is separated into a first n-type floating gate and a second n-type floating gate by an insulating layer on the gate dielectric layer, and the first n-type floating gate passes through the first n-type floating gate.
  • the opening contacts one of the p-type body regions to form a pn junction diode, and the second n-type floating gate contacts the other p-type body region through the second opening to form a pn junction diode.
  • it further includes an n-type field stop region located above the n-type collector region and the p-type collector region, and the n-type field stop region is located below the n-type drift region.
  • the first opening is located under the n-type floating gate and close to the n-type drift region.
  • the second opening is located under the n-type floating gate and close to the n-type drift region.
  • the IGBT power device provided by the embodiment of the present invention has a high threshold voltage in a forward blocking state and a forward turn-on; a low threshold voltage in a reverse conduction state, so that the IGBT power device has a low gate voltage (or 0V voltage). ) Is turned on, so as to increase the reverse current flowing through the current channel of the IGBT power device, reduce the current flowing through the parasitic body diode in the IGBT power device, and improve the reverse recovery speed of the IGBT power device.
  • FIG. 1 is a schematic diagram of a cross-sectional structure of an IGBT power device in related art
  • FIG. 2 is a schematic cross-sectional structure diagram of a first embodiment of an IGBT power device provided by the present application
  • FIG. 3 is a schematic cross-sectional structure diagram of a second embodiment of an IGBT power device provided by the present application.
  • an IGBT power device provided by an embodiment of the present invention includes an n-type collector region 20 and a p-type The collector region 10, the n-type field stop region 29 located above the n-type collector region 20 and the p-type collector region 10, the n-type drift region 21 located above the n-type field stop region 29, is located in the n-type drift region At least two p-type body regions 22 at the top of 21, and only two p-type body regions 22 are exemplarily shown in FIG. 2.
  • the IGBT power device of the embodiment of the present invention in the forward blocking state, a high voltage is applied to the n-type collector region 20 and the p-type collector region 10, and the pn formed by the n-type floating gate 25 and the p-type body region 22
  • the junction diode is forward biased, and the n-type floating gate 25 is charged with positive charges, which lowers the threshold voltage Vht1 of the current channel under the n-type floating gate 25.
  • the voltage of the n-type floating gate 25 is related to the positions of the first opening 1 and the second opening 2 in the gate dielectric layer 24.
  • the first opening 1 is located under the n-type floating gate 25 and close to the n-type drift region 21
  • the second opening 2 is located under the n-type floating gate 25 and close to the n-type drift region 21. That is, the first opening 1 is formed in the above-mentioned one p-type body region 22 and the n-type drift region 21 (two p-type drift regions).
  • the second opening 2 is formed in the other p In the gate dielectric layer 24 between the n-type body region 22 and the n-type drift region 21 (the n-type drift region 21 between the two p-type body regions 22), and the second opening 2 is closer to the part of the n-type drift region 21 Set up.
  • the n-type floating gate 25 can be written with positive charges more easily, so that the voltage of the n-type floating gate 25 can be increased, and the threshold voltage Vht1 of the current channel under the n-type floating gate 25 can be reduced.
  • the collector-emitter voltage Vce is greater than 0V
  • the threshold voltage Vht1 of the current channel under the n-type floating gate 25 is effective for the entire IGBT power device.
  • the influence of the threshold voltage Vth is very low, and the IGBT power device still has a high threshold voltage Vth.
  • the IGBT power device of the embodiment of the present invention is turned off, when the source-drain voltage Vec is greater than 0V, the threshold voltage Vht1 of the current channel under the n-type floating gate 25 has a great influence on the threshold voltage Vth of the entire IGBT power device.
  • the IGBT power device has a low threshold voltage Vth, so that the current channel of the IGBT is turned on at a low gate voltage (or 0V voltage), which can increase the current channel current flowing through the IGBT power device and reduce the power flowing through the IGBT
  • the current of the parasitic body diode in the device improves the reverse recovery speed of the IGBT power device.
  • FIG. 3 is a schematic cross-sectional structure diagram of a second embodiment of an IGBT power device provided by the present application.
  • the IGBT power device in this embodiment is different from the IGBT power device structure shown in FIG. 2 in that, in this embodiment, The n-type floating gate located on the gate dielectric layer 24 is separated by the insulating layer 250 into a first n-type floating gate 251 and a second n-type floating gate 252.
  • the first n-type floating gate 251 passes through the first opening 1 and one of the p
  • the type body region 22 contacts to form a pn junction diode
  • the second floating gate 252 contacts another p type body region 22 through the second opening 2 to form a pn junction diode.
  • the n-type floating gate into two n-type floating gate structures. After the n-type floating gate is charged with positive charges, the voltage of the n-type floating gate can be made higher, so that when the IGBT power device is reverse conducting, the IGBT power The current channel of the device is easier to be opened.

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  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

本发明实施例提供的一种IGBT功率器件，包括位于两个p型体区和两个所述p型体区之间的n型漂移区之上的栅介质层，位于所述栅介质层之上的n型浮栅；位于所述栅介质层和所述n型浮栅之上的栅极，且在横向上所述栅极覆盖所述n型浮栅的两侧侧壁；介于所述栅极与所述n型浮栅之间的绝缘介质层；位于所述栅介质层中的第一开口，所述n型浮栅通过所述第一开口与其中一个所述p型体区接触形成p-n结二极管；位于所述栅介质层中的第二开口，所述n型浮栅通过所述第二开口与另一个所述p型体区接触形成p-n结二极管。本申请能够提高IGBT功率器件的反向恢复速度。

Description

IGBT功率器件
本公开要求在2019年11月27日提交中国专利局、申请号为201911183421.1的中国专利申请的优先权，以上申请的全部内容通过引用结合在本公开中。
技术领域
本申请属于IGBT功率器件技术领域，例如涉及一种反向恢复速度快的IGBT功率器件。
背景技术
相关技术的IGBT(绝缘栅双极型晶体管)功率器件的剖面结构示意图如图1所示，包括底部间隔设置的p型集电极区31和n型集电极区3，p型集电极区31和n型集电极区3通过集电极金属接触层70接集电极电压；位于p型集电极区31和n型集电极区3之上的n型场截止区32，位于n型场截止区32之上的n型漂移区30，位于n型漂移区30顶部的至少两个p型体区33；在每个p型体区33内设有n型发射极区34，n型发射极区34和p型体区33通过发射极金属接触层47接发射极电压，p型体区接触区38用于降低p型体区34的接触电阻；用于控制IGBT功率器件的电流沟道的开启和关断的栅介质层35和栅极36，栅极36和发射极金属接触层47通过绝缘介质层50相绝缘，绝缘介质层50为层间绝缘介质层。
相关技术的IGBT功率器件在关断时，反向电流会从发射极经IGBT功率器件中寄生的体二极管流至集电极，此时体二极管的电流存在注入少子载流子现象，而这些少子载流子在IGBT功率器件再一次开启时进行反向恢复，导致较大的反向恢复电流，反向恢复时间长。
发明内容
本申请提供一种反向恢复速度快的IGBT功率器件，以解决相关技术中的IGBT功率器件因少子载流子注入问题造成的反向恢复时间长的技术问题。
本发明实施例提供的一种IGBT功率器件，包括：
n型集电极区和p型集电极区，位于所述n型集电极区和所述p型集电极区之上的n型漂移区，位于所述n型漂移区顶部的至少两个p型体区，两个所述p型体区被所述n型漂移区隔离；位于每个所述p型体区内的n型发射极区；
位于两个所述p型体区和两个所述p型体区之间的n型漂移区之上的栅介质层，位于所述栅介质层之上的n型浮栅；位于所述栅介质层和所述n型浮栅之上的栅极，且在横向上所述栅极覆盖所述n型浮栅的两侧侧壁；介于所述栅极与所述n型浮栅之间的绝缘介质层；
位于所述栅介质层中的第一开口，所述n型浮栅通过所述第一开口与其中一个所述p型体区接触形成p-n结二极管；
位于所述栅介质层中的第二开口，所述n型浮栅通过所述第二开口与另一个所述p型体区接触形成p-n结二极管。
可选的，所述n型浮栅在所述栅介质层之上被绝缘层分隔为第一n型浮栅和第二n型浮栅，所述第一n型浮栅通过所述第一开口与其中一个所述p型体区接触形成p-n结二极管，所述第二n型浮栅通过所述第二开口与另一个所述p型体区接触形成p-n结二极管。
可选的，还包括位于所述n型集电极区和所述p型集电极区之上的n型场截止区，所述n型场截止区位于所述n型漂移区下方。
可选的，所述第一开口位于所述n型浮栅下方且靠近所述n型漂移区设置。
可选的，所述第二开口位于所述n型浮栅下方且靠近所述n型漂移区设置。
本发明实施例提供的一种IGBT功率器件，在正向阻断状态和正向开启时具有高阈值电压；在反向导通时具有低阈值电压，使得IGBT功率器件在低栅极电压(或0V电压)下导通，从而能够增加流过IGBT功率器件的电流沟道的反向电流，减少流过IGBT功率器件中寄生的体二极管的电流，提高IGBT功率器件的反向恢复速度。
附图说明
下面对描述实施例中所需要用到的附图做一简单介绍。
图1是相关技术的一种IGBT功率器件的剖面结构示意图；
图2是本申请提供的一种IGBT功率器件的第一个实施例的剖面结构示意图；
图3是本申请提供的一种IGBT功率器件的第二个实施例的剖面结构示意图。
具体实施方式
以下将结合本发明实施例中的附图，通过具体实施方式，完整地描述本申请的技术方案。同时，说明书附图中所列示意图，放大了本申请所述的层和区域的尺寸，且所列图形大小并不代表实际尺寸。说明书中所列实施例不应仅限于说明书附图中所示区域的特定形状，而是包括所得到的形状如制备引起的偏差等。
图2是本申请提供的一种IGBT功率器件的第一个实施例的剖面结构示意图，如图2所示，本发明实施例提供的一种IGBT功率器件包括n型集电极区20和p型集电极区10，位于n型集电极区20和p型集电极区10之上的n型场截止区29，位于n型场截止区29之上的n型漂移区21，位于n型漂移区21顶部的至少两个p型体区22，图2中仅示例性的示出了两个p型体区22。位于每个p型体区22内的n型发射极区23；
位于两个p型体区22和两个p型体区22之间的n型漂移区21之上的栅介质层24，位于栅介质层24之上的n型浮栅25；位于栅介质层24和n型浮栅25之上的栅极26，且在横向上栅极26覆盖n型浮栅25的两侧侧壁，从而IGBT功率器件的电流沟道的开启和关断被栅极26和n型浮栅25同时控制；介于栅极26与n型浮栅25之间的绝缘介质层27，栅极26通过电容耦合作用于n型浮栅25；绝缘介质层27通常为二氧化硅；
位于栅介质层24中的第一开口1，n型浮栅25通过第一开口1与其中一个p型体区22接触形成p-n结二极管；位于栅介质层24中的第二开口2，n型浮栅25通过第二开口2与另一个p型体区22接触形成p-n结二极管。
本发明实施例的IGBT功率器件，在正向阻断状态时，n型集电极区20和p型集电极区10被施加高电压，由n型浮栅25与p型体区22形成的p-n结二极管被正向偏置，n型浮栅25被充入正电荷，这使得n型浮栅25下面的电流沟道的阈值电压Vht1降低。n型浮栅25的电压与位于栅介质层24中的第一开口1和第二开口2的位置有关，可选的，第一开口1位于n型浮栅25下方且靠近n型漂移区21设置，同时，第二开口2位于n型浮栅25下方且靠近n型漂移区21设置，即第一开口1形成于位于上述一个p型体区22与n型漂移区21(两个p型体区22之间的n型漂移区21)之间的栅介质层24中，且第一开口1更靠近该部分n型漂移区21设置，同时，第二开口2形成于位于上述另一个p型体区22与n型漂移区21(两个p型体区22之间的n型漂移区21)之间的栅介质层24中，且第二开口2更靠近该部分n型漂移区21设置。这样n型浮栅25 可以更容易的被写入正电荷，从而可以提高n型浮栅25的电压，降低n型浮栅25下面的电流沟道的阈值电压Vht1。
本发明实施例的IGBT功率器件在正向阻断状态和正向开启状态时，集电极-发射极电压Vce大于0V，n型浮栅25下面的电流沟道的阈值电压Vht1对整个IGBT功率器件的阈值电压Vth的影响很低，IGBT功率器件仍具有高阈值电压Vth。本发明实施例的IGBT功率器件在关断时，当源漏电压Vec大于0V时，n型浮栅25下面的电流沟道的阈值电压Vht1对整个IGBT功率器件的阈值电压Vth的影响很大，使得IGBT功率器件具有低阈值电压Vth，从而使IGBT的电流沟道在低栅极电压(或0V电压)下导通，从而能够增加流过IGBT功率器件的电流沟道电流，减少流过IGBT功率器件中寄生的体二极管的电流，提高IGBT功率器件的反向恢复速度。
图3是本申请提供的一种IGBT功率器件的第二个实施例的剖面结构示意图，该实施例的IGBT功率器件与图2所示的IGBT功率器件结构所不同的是，该实施例中，位于栅介质层24之上的n型浮栅被绝缘层250分隔为第一n型浮栅251和第二n型浮栅252，第一n型浮栅251通过第一开口1与其中一个p型体区22接触形成p-n结二极管，第二浮栅252通过第二开口2与另一个p型体区22接触形成p-n结二极管。将n型浮栅分隔为两个n型浮栅结构，在n型浮栅被充入正电荷后，可以使得n型浮栅的电压更高，从而IGBT功率器件在反向导通时，IGBT功率器件的电流沟道更容易被开启。

Claims (5)

  1. 一种IGBT功率器件，包括：
    n型集电极区和p型集电极区，位于所述n型集电极区和所述p型集电极区之上的n型漂移区，位于所述n型漂移区顶部的至少两个p型体区，两个所述p型体区被所述n型漂移区隔离；位于每个所述p型体区内的n型发射极区；
    位于两个所述p型体区和两个所述p型体区之间的n型漂移区之上的栅介质层，位于所述栅介质层之上的n型浮栅；位于所述栅介质层和所述n型浮栅之上的栅极，且在横向上所述栅极覆盖所述n型浮栅的两侧侧壁；介于所述栅极与所述n型浮栅之间的绝缘介质层；
    位于所述栅介质层中的第一开口，所述n型浮栅通过所述第一开口与其中一个所述p型体区接触形成p-n结二极管；
    位于所述栅介质层中的第二开口，所述n型浮栅通过所述第二开口与另一个所述p型体区接触形成p-n结二极管。
  2. 如权利要求1所述的IGBT功率器件，其中，所述n型浮栅在所述栅介质层之上被绝缘层分隔为第一n型浮栅和第二n型浮栅，所述第一n型浮栅通过所述第一开口与其中一个所述p型体区接触形成p-n结二极管，所述第二n型浮栅通过所述第二开口与另一个所述p型体区接触形成p-n结二极管。
  3. 如权利要求1所述的IGBT功率器件，所述IGBT功率器件还包括位于所述n型集电极区和所述p型集电极区之上的n型场截止区，所述n型场截止区位于所述n型漂移区下方。
  4. 如权利要求1所述的IGBT功率器件，其中，所述第一开口位于所述n型浮栅下方且靠近所述n型漂移区设置。
  5. 如权利要求1所述的IGBT功率器件，其中，所述第二开口位于所述n型浮栅下方且靠近所述n型漂移区设置。
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