CN112846194B - Vapor chamber surface treatment and vapor chamber processing method, vapor chamber and electronic device - Google Patents
Vapor chamber surface treatment and vapor chamber processing method, vapor chamber and electronic device Download PDFInfo
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- CN112846194B CN112846194B CN202110078758.7A CN202110078758A CN112846194B CN 112846194 B CN112846194 B CN 112846194B CN 202110078758 A CN202110078758 A CN 202110078758A CN 112846194 B CN112846194 B CN 112846194B
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- 238000003672 processing method Methods 0.000 title claims abstract description 19
- 238000004381 surface treatment Methods 0.000 title claims abstract description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 286
- 239000002245 particle Substances 0.000 claims abstract description 131
- 230000017525 heat dissipation Effects 0.000 claims abstract description 104
- 238000002791 soaking Methods 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims description 91
- 238000000034 method Methods 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 25
- 238000005245 sintering Methods 0.000 claims description 15
- 238000002156 mixing Methods 0.000 claims description 12
- 238000007493 shaping process Methods 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 5
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- 238000005530 etching Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000010949 copper Substances 0.000 abstract description 26
- 229910052802 copper Inorganic materials 0.000 abstract description 26
- 239000011148 porous material Substances 0.000 abstract description 18
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- 239000010410 layer Substances 0.000 description 86
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- 238000012546 transfer Methods 0.000 description 13
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- 239000010935 stainless steel Substances 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- NNPPMTNAJDCUHE-UHFFFAOYSA-N isobutane Chemical compound CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 description 2
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- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
-
- B22F1/0007—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/06—Metallic powder characterised by the shape of the particles
- B22F1/065—Spherical particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/11—Making porous workpieces or articles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
- C23C24/10—Coating starting from inorganic powder by application of heat or pressure and heat with intermediate formation of a liquid phase in the layer
- C23C24/103—Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
- C23C24/106—Coating with metal alloys or metal elements only
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2029—Modifications to facilitate cooling, ventilating, or heating using a liquid coolant with phase change in electronic enclosures
- H05K7/20336—Heat pipes, e.g. wicks or capillary pumps
Abstract
The application discloses a soaking plate surface treatment and soaking plate processing method, a soaking plate and an electronic device. The mixed copper powder includes spherical copper powder and dendritic copper powder with small particle size, and the specific surface area of the capillary layer prepared from the mixed copper powder is easy to be increased. The dendritic copper powder also has branches or bulges, and the spherical copper powder and the dendritic copper powder are convenient to mutually support to form a porous structure with better pore size and porosity after being mixed, and are easy to mutually bond after being hot melted to form a stable porous structure after being cooled. Under the same heat dissipation efficiency, the capillary layer is made of copper material only, so that the space occupied by the capillary layer can be effectively reduced, the thickness of the soaking plate is reduced, and the thickness of the electronic device provided with the soaking plate can be further effectively reduced.
Description
Technical Field
The present application relates to the field of soaking plates, and in particular, to a soaking plate surface treatment method, a soaking plate processing method, a soaking plate, and an electronic device.
Background
The vapor chamber is a heat dissipation structure which is arranged near a heat source of the electronic device to accelerate heat diffusion on the heat source, the vapor chamber is formed by compounding two metal heat dissipation substrates, a runner is arranged in the two compounded heat dissipation substrates, a heat-transferable liquid working medium is poured into the runner, the heat on the heat source of the electronic device is absorbed by the liquid working medium and gasified, and the gasified liquid working medium is moved to a position far away from the heat source to release the heat for liquefaction, so that the heat on the heat source is taken away by gas-liquid conversion through continuous flow of the liquid working medium, and the purpose of rapid heat dissipation is achieved.
The inside of the runner is also provided with a porous capillary structure, and the capillary structure can effectively improve the mass transfer power of the liquid working medium. With the development of miniaturization and thinness of electronic devices, the increase of the capillary layer may increase the space occupied by the flow channel, so on the basis of improving the heat dissipation efficiency of the vapor chamber, how to optimize the capillary structure to reduce the thickness of the vapor chamber is a problem to be solved in the related art.
Disclosure of Invention
The application provides a soaking plate surface treatment and soaking plate processing method, a soaking plate and an electronic device, which can optimize the structure of the soaking plate, improve the heat dissipation efficiency of the soaking plate and reduce the thickness of the soaking plate.
In a first aspect, an embodiment of the present application provides a method for treating a surface of a soaking plate, including the following steps:
obtaining mixed copper powder, wherein the mixed copper powder comprises spherical copper powder and dendritic copper powder.
And setting the mixed copper powder on the wall surface of the flow channel with preset roughness on the surface of the heat dissipation substrate of the vapor chamber.
And carrying out heat treatment on the heat dissipation substrate until the mixed copper powder is melted and mutually adhered on the surface of the runner to form a capillary layer.
According to the soaking plate surface treatment method provided by the embodiment of the application, the mixed copper powder is filled on the wall surface of the flow channel on the surface of the soaking plate heat dissipation substrate, so that the mixed copper powder is melted to form a capillary structure, and the capillary structure prepared from the copper powder can achieve the purpose of accelerating the diffusion of a liquid working medium. The mixed copper powder is only prepared from copper materials, and copper has better heat conduction efficiency, so that the capillary layer prepared from copper powder can effectively improve the heat dissipation efficiency of the vapor chamber, and other filling media for preparing the capillary layer are not needed to be added, so that the thickness of the vapor chamber can be further thinned. The dendritic copper powder is branched, the spherical copper powder and the dendritic copper powder are convenient to mutually support to form a porous structure after being mixed, the particle sizes of the spherical copper powder and the dendritic copper powder are small, the specific surface area of a capillary layer is easy to improve, and the spherical copper powder and the dendritic copper powder are easy to mutually bond after being melted so as to form a stable porous structure after being cooled.
In some exemplary embodiments, the flow channel walls are lined with grooves having dimensions in the range of: the width of the groove is 20-150 mu m, and the depth of the groove is 20-200 mu m; the mixed copper powder is embedded on the inner wall of the groove on the wall surface of the runner.
Based on the above embodiments, copper powder particles can be easily attached in the above predetermined roughness range, and a copper capillary layer formed after heat treatment can be easily attached stably to the flow channel wall surface. The method can avoid the adhesion of the mixed copper powder caused by too smooth wall surfaces of the flow channels and the increase of the overall thickness of the vapor chamber due to the fact that the rough layers of the wall surfaces of the flow channels occupy too much space.
In some exemplary embodiments, the mass mixing ratio of dendritic copper powder to spherical copper powder ranges from 6.2 to 7.4:3.8 to 2.6.
Based on the above examples, in the above mass ratio range, dendritic copper powder particles are mutually supported, spherical copper powder particles are embedded in gaps between dendritic copper powder particles, and dendritic copper powder particles and spherical copper powder particles are mutually matched, so that mixed copper powder with proper pore size and porosity, uniformity and stability are obtained. The dendritic copper powder is more convenient to form a porous structure by using the spherical copper powder, and the capillary layer is facilitated to build up.
In some exemplary embodiments, the spherical copper powder has a particle size in the range of 600 mesh to 2000 mesh; the particle size of the dendritic copper powder ranges from 3 μm to 5 μm.
Based on the above examples, both spherical copper powder and dendritic copper powder may be intermixed within the above particle size ranges, so that the capillary layer produced may achieve a suitable range of porosities as well as porosities. And simultaneously, the surface melting of the copper powder particles is facilitated by controlling the heat treatment temperature, so that the bonding of two adjacent copper powder particles is facilitated.
In some exemplary embodiments, the spherical copper powder includes first particles in a first particle size range, second particles in a second particle size range, and third particles in a third particle size range, the first, second, and third particle size ranges being 600 mesh to 800 mesh, 800 mesh to 1000 mesh, 1000 mesh to 2000 mesh, respectively; the mass mixing ratio of the first particles, the second particles and the third particles in the spherical copper powder is 6:1-3:1-3.
Based on the above examples, spherical copper powder in a plurality of particle size ranges was mixed, and when spherical copper powder particles of large particle size failed to enter a certain gap, spherical copper powder of small particle size could enter the gap to tune the pore size. The spherical copper powder particles with various particle diameters can be adaptively embedded between dendritic copper powder particles with the particle diameter ranging from 3 mu m to 5 mu m by dividing the particle diameter range of the spherical copper powder into the three ranges and adding the spherical copper powder particles according to a certain proportion, so that the pore size and the porosity of the prepared capillary layer can be better tuned.
In some exemplary embodiments, the percentage of the mixed copper powder disposed on the flow channel wall surface that occupies the flow channel cross section of the heat dissipating substrate surface is in the range of 1.5% to 4%.
Based on the embodiment, the capillary layer prepared under the copper powder particle ratio range can obtain a proper specific surface area, so that the capillary layer can obtain a good mass transfer power, and meanwhile, the capillary layer cannot occupy too much flow channel space too much.
In some exemplary embodiments, after the heat-treated heat-dissipating substrate is cooled, the hot-melted mixed copper powder can be adhered to each other on the surface of the runner to form a capillary layer; the heat treatment includes: and (3) conveying the radiating substrate into a sintering furnace for heat treatment, wherein the temperature range of the inlet and outlet of the sintering furnace is 500-600 ℃, the temperature range of the constant temperature section is 650-800 ℃, the time range of the constant temperature section is 20-30 min, and the total treatment time range of the radiating substrate in the sintering furnace is 50-60 min.
Based on the embodiment, the hot melting of the mixed copper powder is carried out in the constant temperature stage, the temperature range of the constant temperature stage is 650-800 ℃, the constant temperature time range is 20-30 min, and the whole time range of the vapor chamber in the sintering furnace is controlled to be 50-60 min, so that the surface layers of the mixed copper powder particles are mutually bonded, and meanwhile, the prepared capillary layer is not collapsed due to the fact that the copper powder particles are thermally melted to be liquefied.
In a second aspect, an embodiment of the present application provides a method for processing a soaking plate, including:
providing two heat dissipation substrates, etching a runner with a preset shape on the surfaces of the heat dissipation substrates, and processing the wall surfaces of the runner to a preset roughness.
And arranging the mixed copper powder on the wall surface of the runner with preset roughness.
And covering one of the two radiating substrates on the other radiating substrate, butting the runners on the two radiating substrates to form a radiating channel, and connecting the mixed copper powder on the wall surfaces of the two runners to fully distribute the mixed copper powder on the wall surfaces of the radiating channel.
And pressing and shaping the two heat dissipation substrates. The heat treatment can be performed before the two heat dissipation substrates are pressed together, or after the two heat dissipation substrates are pressed together and before shaping.
Based on the embodiment, the mixed copper powder is firstly arranged on the wall surface of the flow channel, and then the two heat dissipation substrates are pressed together, so that the mixed copper powder is uniformly arranged on the wall surface of the flow channel, and the uniform stability of the prepared capillary layer is improved.
In a third aspect, an embodiment of the present application provides a soaking plate, including:
the heat dissipation substrate is internally provided with a flow channel, and the wall surface of the flow channel has preset roughness; a kind of electronic device with high-pressure air-conditioning system
The capillary layer is arranged on the wall surface of the runner with preset roughness, and is formed by heat treatment, hot melting and mutual bonding of mixed copper powder, wherein the mixed copper powder comprises dendritic copper powder and spherical copper powder.
According to the vapor chamber provided by the embodiment of the application, the dendritic copper powder and the spherical copper powder are mixed and then arranged on the wall surface of the flow channel, and the capillary layer is arranged on the wall surface of the flow channel after being melted, so that the heat transfer efficiency of the liquid working medium in the flow channel can be improved through the capillary layer prepared from the copper powder, and the heat dissipation efficiency of the vapor chamber is further improved. Under the same heat dissipation efficiency, the capillary layer is only made of copper materials, so that the space occupied by the capillary layer can be effectively reduced, and the aim of thinning the thickness of the soaking plate is fulfilled.
In a fourth aspect, an embodiment of the present application provides an electronic device, including a device main body and a soaking plate, where the soaking plate is manufactured by a processing method of the soaking plate as described above.
Based on the electronic device provided by the embodiment of the application, the electronic device provided with the vapor chamber has better heat dissipation effect on the basis that the vapor chamber has better heat transfer efficiency. The capillary layer of the vapor chamber is only made of copper, so that the requirement of thinning the thickness of the vapor chamber can be met, and the requirement of miniaturization design of the electronic device can be further met.
The application provides a soaking plate surface treatment and soaking plate processing method, a soaking plate and an electronic device. The spherical copper powder and the dendritic copper powder have small particle sizes, and the specific surface area of the capillary layer is easy to improve. The dendritic copper powder also has branches or bulges, and the spherical copper powder and the dendritic copper powder are convenient to mutually support to form a porous structure with better pore size and porosity after being mixed, and are easy to mutually bond after being hot melted to form a stable porous structure after being cooled. Under the same heat dissipation efficiency, the capillary layer is made of copper material only, so that the space occupied by the capillary layer can be effectively reduced, the thickness of the soaking plate is reduced, and the thickness of the electronic device provided with the soaking plate can be further effectively reduced.
Drawings
In order to more clearly illustrate the embodiments of the application or the technical solutions in the prior art, the drawings that are necessary for the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the application and that other drawings may be obtained from them without inventive effort for a person skilled in the art.
FIG. 1 is a flowchart showing a method for manufacturing a vapor chamber according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a mixed dendritic copper powder and spherical copper powder in a processing method of a vapor chamber according to an embodiment of the present application;
fig. 3 is a cross-sectional view of a rough layer on a flow passage wall surface of a heat dissipation substrate in a processing method of a vapor chamber according to an embodiment of the present application;
fig. 4 is a cross-sectional view of a mixed copper powder provided on the wall surface of a flow passage in the processing method of a vapor chamber according to an embodiment of the present application;
FIG. 5 is a cross-sectional view of a heat dissipation substrate after being covered in a processing method of a vapor chamber according to an embodiment of the present application;
fig. 6 is a front view of a bonded two heat dissipating substrates in a processing method of a vapor chamber according to an embodiment of the present application;
FIG. 7 is a second flowchart of a method for fabricating a vapor chamber according to an embodiment of the application;
fig. 8 is a cross-sectional view of a vapor chamber of an embodiment of the application.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
The inventor finds that the capillary structure of the soaking plate in the related art is prepared by mixing various raw materials, so that a good heat dissipation effect is difficult to obtain, and the soaking plate is unfavorable for developing toward miniaturization, so that the application provides a surface treatment method of the soaking plate to solve the problems in the soaking plate.
As shown in fig. 1, the method for treating the surface of the soaking plate according to an embodiment of the present application specifically includes the following steps:
s101, obtaining mixed copper powder, wherein the mixed copper powder comprises spherical copper powder and dendritic copper powder.
The dendritic copper powder is of a structure with a raised or branched surface, and can be prepared by an electrolytic method, for example, the electrolytic method can adopt highly polished stainless steel as a cathode and an electrolytic copper plate as an anode, electrolyte can be sulfate solution, simple substance copper on the electrolytic copper plate is migrated to a stainless steel plate by applying voltage to the cathode and the anode, and the stainless steel plate is taken out to scrape the simple substance copper to prepare the dendritic copper powder.
The spherical copper powder is in the form of particles having a smooth surface, and can be produced by atomization, for example, by placing a copper liquid in a molten state in a container, allowing the copper liquid to flow down from a small hole in the bottom of the container, providing a high-pressure nozzle at the outlet of the small hole, blowing off the copper liquid flowing out of the small hole by the high-pressure nozzle, and providing a cooling liquid nozzle in the vicinity of the high-pressure nozzle, and rapidly cooling the blown-off copper liquid, thereby producing spherical copper powder having a fixed form.
And uniformly mixing the spherical copper powder and the dendritic copper powder according to a preset proportion to obtain the required mixed copper powder.
S102, setting the mixed copper powder on a runner wall surface with preset roughness in the heat dissipation substrate.
The wall surface of the cooling plate forming the flow channel has roughness, so that the mixed copper powder can be adhered to the wall surface of the flow channel. The copper powder may partially cover the flow channel wall or entirely cover the flow channel wall. Preferably, the mixed copper powder can fully cover the wall surface of the runner so as to increase the specific surface area of the mixed copper powder filled in the runner.
S103, performing heat treatment on the heat dissipation substrate until the mixed copper powder is melted and mutually adhered on the surface of the runner to form a capillary layer.
In the heat treatment process, the heat treatment temperature and the heat treatment time can be regulated and controlled, so that the surface layers of single copper powder particles of the mixed copper powder are melted first, and the surface layers of two adjacent copper powder particles can be bonded with each other. It should be noted that the heat treatment temperature and the heat treatment time are controlled at the same time, so that the single copper powder particles are prevented from being completely melted to be in a liquid state and flowing randomly, and gaps can still exist between two adjacent copper powder particles.
According to the processing method of the vapor chamber, provided by the embodiment of the application, the mixed copper powder is filled in the flow channel on the surface of the vapor chamber heat dissipation substrate, so that the mixed copper powder is melted to form a capillary structure, and the capillary structure prepared from the copper powder can achieve the purpose of accelerating the diffusion of a liquid working medium. The mixed copper powder is only prepared from copper materials, and copper has better heat conduction efficiency, so that the capillary layer prepared from copper powder can effectively improve the heat dissipation efficiency of the vapor chamber, and other filling media for preparing the capillary layer are not needed to be added, so that the thickness of the vapor chamber can be further thinned. The dendritic copper powder is provided with branches or bulges, and the spherical copper powder and the dendritic copper powder are convenient to mutually support to form a porous structure after being mixed. In addition, the spherical copper powder and the dendritic copper powder have small particle sizes, the specific surface area of the prepared capillary layer is easy to be increased after the spherical copper powder and the dendritic copper powder are mixed with each other, and the spherical copper powder and the dendritic copper powder are easy to be bonded with each other after being melted, so that a stable capillary layer can be formed after the spherical copper powder and the dendritic copper powder are cooled.
The specific surface area of the capillary layer is increased, the mass transfer power of the capillary layer to the liquid working medium can be effectively improved, copper powder particles with smaller particle size range can be selected, meanwhile, the wall surface of the runner is provided with roughness, and the copper powder particles with small particle size are convenient to adhere to the rough wall surface of the runner. In some exemplary embodiments, the flow channel walls are lined with grooves, and the mixed copper powder is embedded on the inner walls of the grooves of the flow channel walls. The groove width of the groove may range from 20 μm to 150 μm, for example, the groove width of the groove may range from 20 μm, 50 μm, 100 μm, 150 μm, etc., and the groove depth of the groove may range from 20 μm to 200 μm, for example, the groove depth may range from 20 μm, 60 μm, 100 μm, 150 μm, 200 μm, etc. In the above size range, copper powder particles can be easily attached, and a copper capillary layer formed after heat treatment can be easily attached to the wall surface of the flow channel stably. When the size of the groove on the wall surface of the runner is smaller than the lower limit of the size range, the wall surface of the runner is too smooth, so that copper powder particles are difficult to attach, and the copper powder particles can fall off from the wall surface of the runner under the action of slight external force, so that the uniformity of the capillary layer manufactured by final processing is difficult to control. When the size of the groove on the wall surface of the runner is larger than the upper limit of the size range, the wall surface of the runner is too rough, and the copper powder particles can be ensured to be stably attached to the wall surface of the runner, but the roughness is too large, so that a rough layer occupies more installation space, and the thickness of the vapor chamber is not beneficial to thinning.
Because the surfaces of the single dendritic copper powder particles are provided with bulges or branches, the adjacent two dendritic copper powder particles are difficult to be compactly arranged, and the pore size and the porosity between the adjacent two dendritic copper powder particles are large. The surfaces of the single spherical copper powder particles are smooth, and the adjacent spherical copper powder particles are compactly arranged in a sliding manner, so that the pore size and the porosity between the adjacent spherical copper powder particles are smaller. The larger or smaller pore size and porosity are not beneficial to the pumping capacity of the finally prepared capillary layer on the liquid working medium. As shown in fig. 2, both dendritic copper powder particles 120 and spherical copper powder particles 110 are mixed such that spherical copper powder particles 110 may be embedded between protrusions or branches 121 of dendritic copper powder particles 120, effectively filling the interstices between dendritic copper powder particles 120, thereby facilitating the tuning of the pore size and porosity of the resulting capillary layer.
In some exemplary embodiments, the mass mixing ratio of dendritic copper powder to spherical copper powder ranges from 6.2 to 7.4:3.8 to 2.6. For example, the mass mixing ratio of dendritic copper powder to spherical copper powder may be 6.2:3.8, 6.8:3.2 or 7.4:
2.6, etc. In the mass ratio range, dendritic copper powder particles are mutually supported, spherical copper powder particles are embedded in gaps among the dendritic copper powder particles, and the dendritic copper powder particles and the spherical copper powder particles are mutually matched, so that mixed copper powder with proper pore size and porosity is obtained. The dendritic copper powder is more convenient to form a porous structure by using the spherical copper powder, and the capillary layer is facilitated to build up. When the mass mixing ratio of the dendritic copper powder to the spherical copper powder is smaller than the above range, the amount of spherical copper powder particles is too large, resulting in too low porosity of the finally produced capillary layer. When the mass mixing ratio of the dendritic copper powder to the spherical copper powder is larger than the above ratio range, the dosage of the dendritic copper powder particles is too large, the spherical copper powder particles are difficult to meet the filling requirement, and the porosity of the finally obtained capillary layer is too large.
The size of the individual dendritic copper particles and the individual spherical copper particles will also determine the pore size and porosity of the pores within the resulting capillary layer. In some exemplary embodiments, the particle size of the spherical copper powder ranges from 600 mesh to 2000 mesh, for example, the particle size of the spherical copper powder may be 600 mesh, 800 mesh, 1000 mesh, 1500 mesh, 2000 mesh, or the like. The particle diameter of the dendritic copper powder is in the range of 3 μm to 5 μm, for example, the particle diameter of the dendritic copper powder may be in the range of 3 μm, 4 μm, 5 μm, or the like. In the above particle size range, both the spherical copper powder and the dendritic copper powder may be intermixed so that the capillary layer produced may achieve a suitable range of pore sizes and porosities. And simultaneously, the heat treatment temperature is convenient to control so as to melt the surfaces of the copper powder particles, so that the adjacent two copper powder particles are convenient to bond.
Further, dendritic copper powder with single particle size can be selected, dendritic copper powder with a preset particle size range can also be selected, and in consideration of the great difficulty of adopting an electrolytic method to prepare the dendritic copper powder with single particle size, in the embodiment of the application, mixed dendritic copper powder with the particle size range of 3-5 μm is selected, so that dendritic copper powder particles with smaller particle size and dendritic copper powder particles with larger particle size are mutually embedded, and gaps between two adjacent dendritic copper powder particles are tuned.
Similarly, spherical copper powder with a single particle size can be selected, and spherical copper powder with a preset particle size range can also be selected. In some exemplary embodiments, the spherical copper powder includes first particles in a first particle size range, second particles in a second particle size range, and third particles in a third particle size range, the first, second, and third particle size ranges being 600 mesh to 800 mesh, 800 mesh to 1000 mesh, 1000 mesh to 2000 mesh, respectively; the mass mixing ratio of the first particles, the second particles, and the third particles in the spherical copper powder ranges from 6:1 to 3:1 to 3, for example, the mass mixing ratio of the first particles, the second particles, and the third particles may be 6:1: 3. 6:2:2 or 6:3:1. the spherical copper powder in various particle size ranges is mixed, and when spherical copper powder particles with large particle size cannot enter a certain gap, spherical copper powder with small particle size can enter the gap to tune the pore size. The spherical copper powder particles with various particle diameters can be adaptively embedded between dendritic copper powder particles with the particle diameter ranging from 3 mu m to 5 mu m by dividing the particle diameter range of the spherical copper powder into the three ranges and adding the spherical copper powder particles according to a certain proportion, so that the pore size and the porosity of the prepared capillary layer can be better tuned.
The mixed copper powder can be partially covered on the wall surface of the runner, and the mixed copper powder can also be completely covered on the wall surface of the runner, preferably, the mixed copper powder is completely covered on the wall surface of the runner, so that the contact area of the finally prepared capillary layer and the liquid working medium can be increased, and the mass transfer power is improved. On the basis that the mixed copper powder is fully covered on the wall surface of the flow channel, in some exemplary embodiments, the percentage of the mixed copper powder on the wall surface of the flow channel to occupy the flow channel cross section of the surface of the heat dissipation substrate ranges from 1.5% to 4%. It can be understood that after the two heat dissipation substrates are pressed together, the two flow channels on the two heat dissipation substrates can be butted to form a heat dissipation channel, and the percentage of the mixed copper powder occupying the cross section of the heat dissipation channel ranges from 3% to 8%, for example, the percentage of the mixed copper powder occupying the cross section of the heat dissipation channel can be 3%, 6% or 8%. The capillary layer prepared under the copper powder particle occupying ratio range can enable the capillary layer to obtain a proper specific surface area, so that the capillary layer can obtain a good mass transfer power, and meanwhile, the capillary layer cannot occupy too much flow passage space too much.
In some exemplary embodiments, after cooling the heat-treated heat-dissipating substrate, the hot-melted copper powder mixture may adhere to each other on the surface of the flow channel to form a capillary layer. Specifically, the heat treatment process may be to send the heat dissipating substrate into a sintering furnace for heat treatment, wherein the temperature range of the inlet and outlet of the sintering furnace is 500-600 ℃, the temperature range of the constant temperature section is 650-800 ℃, the time range of the constant temperature section is 20-30 min, and the total treatment time range of the heat dissipating substrate in the sintering furnace is 50-60 min. The hot melting of the mixed copper powder is carried out in a constant temperature stage, the temperature range of the constant temperature stage is 650-800 ℃, the constant temperature time range is 20-30 min, and the whole time range of a soaking plate in a sintering furnace is controlled to be 50-60 min, so that the surface layers of the mixed copper powder particles are hot melted to be mutually bonded, and meanwhile, the prepared capillary layer is not collapsed caused by the fact that the copper powder particles are hot melted to be liquefied.
The embodiment of the application also provides a processing method of the vapor chamber, wherein the vapor chamber can comprise two heat dissipation substrates made of metal materials, and a heat dissipation channel is formed in the heat dissipation substrates after the two heat dissipation substrates are pressed together. For example, the two heat dissipation substrates may be aluminum heat dissipation substrates or copper heat dissipation substrates, or one of the two heat dissipation substrates is copper heat dissipation substrate and the other is aluminum heat dissipation substrate. The mixed copper powder can be arranged on the wall surface of the flow channel formed by the heat dissipation substrates before the two heat dissipation substrates are pressed, and the mixed copper powder can also be arranged on the wall surface of the flow channel between the two heat dissipation substrates after the two heat dissipation substrates are pressed.
When the mixed copper powder is disposed on the wall surface of the flow channel of the heat dissipation substrate before the two heat dissipation substrates are pressed together, referring to fig. 3 to 5, in some exemplary embodiments, the processing method of the heat dissipation substrate may include the following steps:
s201, two heat dissipation substrates 210 are provided, a runner 220 with a preset shape is etched on the surface of the heat dissipation substrate 210, and the wall surface of the runner 220 is processed to a preset roughness, so that a rough layer 230 is formed on the surface of the runner 220.
The wall surface of the flow channel 220 may be treated by plasma bombardment, etc. to process the wall surface of the flow channel 220 to a predetermined roughness.
And S202, arranging the mixed copper powder 240 on the wall surface of the flow channel 220 with preset roughness.
In the embodiment of the application, the mixed copper powder with smaller particle size is selected, and the mixed copper powder 240 is coated on the wall surface of the flow channel 220 with preset roughness, so that copper powder particles can be hung up, and light weight falling deposition can be avoided. The mixed copper powder 240 can be arranged on the wall surface of the flow channel by brushing, spraying and the like. If necessary, the uniform and stable wind speed can be adopted for blowing and sucking, and the mixed copper powder with the unattached surface layer is removed, so that the uniformity of the prepared capillary layer is prevented from being influenced by the deposition of the mixed copper powder with the unattached surface layer under the action of gravity in the process of moving the heat dissipation substrate.
S203, one of the two heat dissipation substrates 210 is covered on the other heat dissipation substrate, the runners 220 on the two heat dissipation substrates 210 are butted to form a heat dissipation channel 250, and the mixed copper powder 240 on the wall surfaces of the two runners 220 are butted to fully distribute the mixed copper powder 240 on the wall surfaces of the heat dissipation channel 250, so that the capillary layer is fully distributed on the whole wall surface of the heat dissipation channel 250, and the mass transfer power of the capillary layer is improved.
S204, pressing and shaping the two heat dissipation substrates 210.
The heat treatment may be performed before the two heat dissipation substrates 210 are pressed together, or may be performed after the two heat dissipation substrates 210 are pressed together and before shaping. For example, after the two heat dissipation substrates 210 are processed to form the runner 220, the mixed copper powder 240 is respectively disposed on the wall surfaces of the runner 220, and then the two heat dissipation substrates 210 with the mixed copper powder 240 are directly subjected to heat treatment, so that the mixed copper powder 240 forms a capillary layer with stable structure on the wall surfaces of the runner 220, and then the two heat dissipation substrates 210 are pressed and shaped, so that the uniformity and stability of the prepared capillary layer are improved.
As shown in fig. 6, the process of shaping the laminated heat dissipating substrate 210 may include disposing liquid filling pipes 270 at two ends of the heat dissipating channel 250, where the liquid filling pipes 270 form the inlet 251 of the heat dissipating channel 250. The liquid working medium for heat transfer is poured into the heat radiation channel 250 from the inlet 251, and then the inlet 251 is closed to seal the liquid working medium. The liquid working medium may be partially filled in the heat dissipation channel 250 to provide a space for the liquid working medium to perform gas-liquid conversion. The liquid working medium may be, but is not limited to, water, liquid nitrogen, ammonia, isobutane, acetone, methanol, ethanol, HFC refrigerants, etc.
After the liquid working medium is poured, the liquid filling pipe 270 is used for vacuumizing the heat dissipation channel 250 filled with the liquid working medium, gas in the heat dissipation channel 250 is removed, and then the liquid filling pipe 270 is closed, so that the heat dissipation channel 250 is in a negative pressure environment, the gas-liquid conversion of the liquid working medium is facilitated, and the heat dissipation efficiency is improved.
The following describes a processing method of the vapor chamber according to the present application in a specific embodiment, and referring to fig. 7, the processing method of the vapor chamber specifically includes the following steps:
s301, providing two heat dissipation substrates, and etching flow channels with preset shapes on the surfaces of the two heat dissipation substrates respectively.
S302, respectively carrying out plasma bombardment treatment on the wall surfaces of the flow channels on the two heat dissipation substrates, and processing the wall surfaces of the flow channels into grooves, wherein the width of the grooves can be 90-100 mu m, and the depth of the grooves can be 95-105 mu m.
S303, preparing mixed copper powder, and preparing mixed copper powder of three formulas of formula A, formula B and formula C according to the mass ratio in the table 1.
TABLE 1
S304, respectively coating the mixed copper powder of the three formulas A, B and C on the wall surface of the flow channel with preset roughness on the heat dissipation substrate.
S305, feeding the radiating substrate coated with the mixed copper powder into a sintering furnace, controlling the temperature range of an inlet and an outlet of the sintering furnace to be 500-600 ℃, controlling the temperature of a constant temperature section to be 755 ℃, controlling the time range of the constant temperature section to be 25min, and putting the radiating substrate into the sintering furnace for 50-60 min.
And S306, taking out the heat dissipation substrate from the sintering furnace, and cooling the mixed copper powder to form the capillary layer. And respectively pressing the two heat dissipation substrates provided with the mixed copper powder with the same proportion, so that the flow channels on the two heat dissipation substrates form heat dissipation channels, and the capillary layers on the wall surfaces of the two flow channels are connected to form the capillary layers distributed in the whole heat dissipation channels.
S307, a liquid filling pipe is welded at the inlet of the runner, and liquid working medium, which can be acetone or water, is filled into the runner through the liquid filling pipe.
S308, vacuumizing the flow channel filled with the liquid working medium through the liquid filling pipe, discharging gas in the flow channel, and sealing the liquid filling pipe to enable the flow channel to be in a negative pressure environment.
According to the method, the mixed copper powder in the three formulas A, B, C is coated on the wall surface of the flow channel by adopting the method in the steps S301 to S306, 9 radiating plates with the percentage of the mixed copper powder to occupy the cross section of the radiating channel of 3%, 5% and 8% are prepared, the porosities of the capillary layers in the 9 radiating plates are shown in the table 2, and the pore sizes of the pores in the 9 radiating plate inner capillary layers are shown in the table 3.
TABLE 2
| Ratio of mixed copper powder | 3％ | 5％ | 8％ |
| Formulation A | 46.3％ | 47.9％ | 45.2％ |
| Formulation B | 47.5％ | 48.1％ | 46.4％ |
| Formula C | 53.2％ | 50.4％ | 49.8％ |
TABLE 3 Table 3
| Ratio of mixed copper powder | 3％ | 5％ | 8％ |
| Formulation A | 8～11μm | 9～12μm | 9～14μm |
| Formulation B | 9～13μm | 10～15μm | 8～12μm |
| Formula C | 11～16μm | 12～17μm | 10～14μm |
As can be seen from the results in Table 2, the porosity of the prepared capillary layer was maximized when the mixed copper powder of formula C occupied 3% of the cross section of the flow passage at different addition amounts of the three mixed copper powders of formula A, formula B and formula C.
As is clear from the results in Table 3, the pore diameter of the prepared capillary layer was maximized when the mixed copper powder of formula C occupied 5% of the cross section of the flow passage at different addition amounts of the three mixed copper powders of formula A, formula B and formula C.
The application continues to carry out capillary layer vertical suction liquid working medium detection experiments on the 9 soaking plates prepared in the table 2 and the table 3 respectively, and the suction capacity of the 9 capillary layers on the liquid working medium is judged by measuring the quality of the liquid working medium sucked by the capillary layers. Specifically, the aperture of a runner in the soaking plate is 3mm, the liquid working medium is deionized water, the position of the soaking plate is adjusted to enable the runner to be distributed along the vertical direction, the runner inlet is immersed in the deionized water, the soaking plate is taken out after standing until the capillary layer does not suck the deionized water any more, and the mass of the deionized water sucked by the capillary layer is counted, wherein the mass of the deionized water sucked by the capillary layer is shown in table 4.
TABLE 4 Table 4
| Ratio of mixed copper powder | 3％ | 5％ | 8％ |
| Formulation A | 0.07g | 0.08g | 0.06g |
| Formulation B | 0.09g | 0.11g | 0.08g |
| Formula C | 0.13g | 0.16g | 0.10g |
As can be seen from the results in table 4, the capillary layers in the 9 soaking plates prepared in the above examples all have the ability to suck deionized water. When the mixed copper powder of the formula C occupies 5% of the cross section of the flow channel, the prepared capillary layer has the best pumping capacity for deionized water, which indicates that the capillary layer has the best mass transfer capacity for deionized water, and the capillary layer can be applied to the vapor chamber to improve the heat dissipation efficiency of the vapor chamber.
Referring to fig. 8, the soaking plate 200 may include a heat dissipating substrate and a capillary layer 290.
The surface of the heat dissipation substrate is provided with a flow passage, and the wall surface of the flow passage has preset roughness. Specifically, the heat dissipation substrate includes two metal heat dissipation substrates 210, flow channels are etched on the surfaces of the two metal heat dissipation substrates 210, the wall surfaces of the flow channels are processed to have a predetermined roughness, and after the two metal heat dissipation substrates 210 are pressed together, the flow channels on the two metal heat dissipation substrates 210 form the heat dissipation channel 250.
The capillary layer 290 is arranged on the wall surface of the runner 250 with preset roughness, and the capillary layer 290 is a porous capillary layer formed by heat treatment, hot melting and mutual bonding of mixed copper powder, wherein the mixed copper powder comprises dendritic copper powder and spherical copper powder.
The vapor chamber 200 further comprises a liquid working medium 280 arranged in the heat dissipation channel 250, a part of the capillary layer 290 is immersed in the liquid working medium 280, the capillary layer 290 sucks the liquid working medium 280 for diffusion, and under the condition that external heat is received, the capillary layer 290 sucks the liquid working medium 280 to promote the liquid working medium 280 to rapidly perform gas-liquid conversion, so that the heat dissipation efficiency of the vapor chamber 200 is improved.
The two ends of the flow channel in the vapor chamber 200 can be sealed, and the interior of the flow channel is in a negative pressure state, so that the gasification temperature of the liquid working medium 280 is reduced, the mass transfer power is improved, and the heat dissipation efficiency of the vapor chamber 200 is further improved.
According to the vapor chamber 200 provided by the embodiment of the application, dendritic copper powder and spherical copper powder are mixed and then arranged on the wall surface of the heat dissipation channel 250, and the capillary layer 290 is formed on the wall surface of the heat dissipation channel 250 after being melted, so that the heat transfer efficiency of the liquid working medium 280 in the flow channel can be improved through the capillary layer 290 made of copper powder, and the heat dissipation efficiency of the vapor chamber 200 is further improved. Under the same heat dissipation efficiency, the capillary layer 290 is made of copper material only, so that the space occupied by the capillary layer 290 can be effectively reduced, and the purpose of thinning the thickness of the soaking plate 200 can be achieved.
The embodiment of the application also provides an electronic device, which comprises a device main body and a soaking plate 200, wherein the soaking plate 200 can be installed in the device main body, and the soaking plate 200 is manufactured by the processing method of the soaking plate.
Based on the electronic device provided by the embodiment of the application, on the basis that the soaking plate 200 has better heat transfer efficiency, the electronic device provided with the soaking plate 200 also has better heat dissipation effect. The capillary layer of the vapor chamber 200 is made of copper only, so that the requirement of thinning the thickness of the vapor chamber can be met, and the requirement of miniaturization design of the electronic device can be further met.
The same or similar reference numerals in the drawings of the present embodiment correspond to the same or similar components; in the description of the present application, it should be understood that, if there is an azimuth or positional relationship indicated by terms such as "upper", "lower", "left", "right", etc., based on the azimuth or positional relationship shown in the drawings, it is only for convenience of describing the present application and simplifying the description, but it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be constructed and operated in a specific azimuth, and thus terms describing the positional relationship in the drawings are merely illustrative and should not be construed as limitations of the present patent, and specific meanings of the terms described above may be understood by those skilled in the art according to specific circumstances.
The foregoing description of the preferred embodiments of the application is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the application.
Claims (10)
1. The soaking plate surface treatment method is characterized by comprising the following steps of:
obtaining mixed copper powder, wherein the mixed copper powder comprises spherical copper powder and dendritic copper powder;
in the mixed copper powder, the dendritic copper powder is larger than the spherical copper powder in use;
the mixed copper powder comprises dendritic copper powder, the dendritic copper powder is of a structure with bulges or branches on the surface, the dendritic copper powder supports each other, and the spherical copper powder is embedded between the bulges or the branches of the dendritic copper powder;
the mixed copper powder is arranged on the wall surface of a flow channel with preset roughness on the surface of a radiating substrate of a vapor chamber;
and performing heat treatment on the heat dissipation substrate until the mixed copper powder is melted and mutually adhered on the surface of the runner to form a stable capillary layer.
2. The soaking plate surface treatment method according to claim 1, wherein grooves are distributed on the wall surface of the runner, and the size range of the grooves is as follows: the width of the groove is 20-150 mu m, and the depth of the groove is 20-200 mu m; the mixed copper powder is embedded on the inner wall of the groove on the wall surface of the flow passage.
3. The soaking plate surface treatment method according to any one of claims 1 to 2, characterized in that the mass mixing ratio of the dendritic copper powder to the spherical copper powder is in the range of 6.2 to 7.4:3.8 to 2.6.
4. The soaking plate surface treatment method according to any one of claims 1 to 2, characterized in that the particle size of the spherical copper powder ranges from 600 mesh to 2000 mesh; the grain diameter of the dendritic copper powder ranges from 3 mu m to 5 mu m.
5. The soaking plate surface treatment method according to any one of claims 1 to 2, wherein the spherical copper powder comprises first particles in a first particle size range, second particles in a second particle size range, and third particles in a third particle size range, the first particle size range, the second particle size range, and the third particle size range being 600 mesh to 800 mesh, 800 mesh to 1000 mesh, 1000 mesh to 2000 mesh, respectively; the mass mixing proportion of the first particles, the second particles and the third particles in the spherical copper powder ranges from 6:1 to 3:1 to 3.
6. The soaking plate surface treatment method according to any one of claims 1-2, wherein the mixed copper powder provided on the flow passage wall surface occupies 1.5% -4% of the flow passage cross section of the heat radiating substrate surface.
7. The method for treating a surface of a vapor chamber according to claim 1, wherein the heat-treated heat-dissipating substrate is cooled, and the melted mixed copper powder is allowed to adhere to each other on the surface of the flow channel to form a capillary layer; the heat treatment includes: and (3) sending the radiating substrate into a sintering furnace for heat treatment, wherein the temperature range of an inlet and an outlet of the sintering furnace is 500-600 ℃, the temperature range of a constant temperature section is 650-800 ℃, the time range of the constant temperature section is 20-30 min, and the total treatment time range of the radiating substrate in the sintering furnace is 50-60 min.
8. A processing method of a soaking plate is characterized by comprising the following steps:
wherein the surface of the soaking plate is prepared by the soaking plate surface treatment method of any one of the claims 1-7;
providing two heat dissipation substrates, etching a runner with a preset shape on the surface of the heat dissipation substrates, and processing the wall surface of the runner to a preset roughness;
the mixed copper powder is arranged on the wall surface of the flow channel with the preset roughness;
covering one of the two radiating substrates on the other radiating substrate, butting the runners on the two radiating substrates to form runners, and connecting the mixed copper powder on the wall surfaces of the two runners to fully distribute the mixed copper powder on the wall surfaces of the runners;
and pressing and shaping the two heat dissipation substrates, wherein the heat treatment enables the mixed copper powder to form a capillary layer before the two heat dissipation substrates are pressed, or after the two heat dissipation substrates are pressed and before shaping.
9. A vapor chamber produced by the method for producing a vapor chamber according to claim 8, comprising:
the heat dissipation substrate is internally provided with a flow channel, and the wall surface of the flow channel has preset roughness; the capillary layer is arranged on the wall surface of the runner with the preset roughness, the capillary layer is formed by heat treatment, hot melting and mutual bonding of mixed copper powder, and the mixed copper powder comprises dendritic copper powder and spherical copper powder.
10. An electronic device comprising a device body and a soaking plate, wherein the soaking plate is manufactured by the method for manufacturing the soaking plate according to claim 8.
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Address after: Room 422, 4th floor, building 1, Linrui youth apartment, 955 rulehu street, Airport Economic Zone, Nanchang City, Jiangxi Province 330000 Applicant after: Jiangxi zhanyao Microelectronics Co.,Ltd. Address before: 330013, Nanchang, Jiangxi, north of the Economic Development Zone Huang Jia Hu West Road, the ophelion Technology Park. Applicant before: NANCHAGN OFILM DISPLAY TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20220511 Address after: Room 1020, 2nd floor, Yangke Road, Xinchang District, Xinjiang District, Jiangxi Province Applicant after: Jiangxi Xinfei New Material Co.,Ltd. Address before: Room 422, 4th floor, building 1, Linrui youth apartment, 955 rulehu street, Airport Economic Zone, Nanchang City, Jiangxi Province 330000 Applicant before: Jiangxi zhanyao Microelectronics Co.,Ltd. |
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