CN112846194A - Surface treatment of vapor chamber, method of processing vapor chamber, and electronic device - Google Patents

Surface treatment of vapor chamber, method of processing vapor chamber, and electronic device Download PDF

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CN112846194A
CN112846194A CN202110078758.7A CN202110078758A CN112846194A CN 112846194 A CN112846194 A CN 112846194A CN 202110078758 A CN202110078758 A CN 202110078758A CN 112846194 A CN112846194 A CN 112846194A
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copper powder
heat dissipation
soaking plate
mixed
flow channel
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CN112846194B (en
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李甜甜
胡冬生
寨虎
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Jiangxi Xinfei New Material Co ltd
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Nanchang OFilm Display Technology Co Ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/08Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
    • B22F1/0007
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/06Metallic powder characterised by the shape of the particles
    • B22F1/065Spherical particles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10Sintering only
    • B22F3/11Making porous workpieces or articles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00Coating starting from inorganic powder
    • C23C24/08Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/10Coating starting from inorganic powder by application of heat or pressure and heat with intermediate formation of a liquid phase in the layer
    • C23C24/103Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
    • C23C24/106Coating with metal alloys or metal elements only
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00Constructional details common to different types of electric apparatus
    • H05K7/20Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2029Modifications to facilitate cooling, ventilating, or heating using a liquid coolant with phase change in electronic enclosures
    • H05K7/20336Heat pipes, e.g. wicks or capillary pumps

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  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
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  • Composite Materials (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Nanotechnology (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Powder Metallurgy (AREA)

Abstract

The application discloses a soaking plate surface treatment and soaking plate processing method, a soaking plate and an electronic device. The mixed copper powder comprises spherical copper powder and dendritic copper powder with small particle size, and the specific surface area of a capillary layer prepared from the mixed copper powder is easy to increase. The dendritic copper powder also has branches or bulges, the spherical copper powder and the dendritic copper powder are convenient to support each other after being mixed to form a porous structure with better pore size and porosity, and the spherical copper powder and the dendritic copper powder are easy to bond each other after being hot-melted to form a stable porous structure after being cooled. Under equal radiating efficiency, the capillary layer is only made by the copper product, can effectively reduce the space that the capillary layer occupy, and attenuate soaking plate thickness further still can effectively reduce the thickness of the electron device who installs this application soaking plate.

Description

Surface treatment of vapor chamber, method of processing vapor chamber, and electronic device
Technical Field
The application relates to the technical field of vapor chamber, in particular to a vapor chamber surface treatment and vapor chamber processing method, a vapor chamber and an electronic device.
Background
The soaking plate is a heat dissipation structure which is arranged near a heat source of the electronic device and used for accelerating heat diffusion on the heat source, the soaking plate is formed by compounding two metal heat dissipation substrates, a flow channel is arranged in the two compounded heat dissipation substrates, a liquid working medium capable of conducting heat is filled in the flow channel, the heat on the heat source of the electronic device is absorbed through the liquid working medium and is gasified, the gasified liquid working medium releases heat for liquefaction after moving to a position far away from the heat source, and therefore the heat on the heat source is taken away through gas-liquid conversion through continuous flowing of the liquid working medium, and the purpose of rapid heat dissipation is achieved.
A porous capillary structure is further arranged inside the flow channel, and the capillary structure can effectively improve mass transfer power of the liquid working medium. As electronic devices are increasingly miniaturized and thinned, increasing the capillary layer may increase the space occupied by the flow channel, and therefore, on the basis of improving the heat dissipation efficiency of the vapor chamber, how to optimize the capillary structure to reduce the thickness of the vapor chamber is an urgent problem to be solved in the related art.
Disclosure of Invention
The application provides a soaking plate surface treatment and soaking plate processing method, a soaking plate and an electronic device, which can optimize the structure of the soaking plate, improve the heat dissipation efficiency of the soaking plate and reduce the thickness of the soaking plate.
In a first aspect, an embodiment of the present application provides a method for processing a surface of a soaking plate, including the steps of:
and obtaining mixed copper powder, wherein the mixed copper powder comprises spherical copper powder and dendritic copper powder.
And arranging the mixed copper powder on the surface of the heat dissipation substrate of the soaking plate, wherein the surface of the channel wall has preset roughness.
And carrying out heat treatment on the heat dissipation substrate until the mixed copper powder is melted and adhered to each other to form a capillary layer on the surface of the flow channel.
According to the surface treatment method of the soaking plate provided by the embodiment of the application, the mixed copper powder is filled on the wall surface of the flow channel on the surface of the heat dissipation substrate of the soaking plate, so that the mixed copper powder is melted to form a capillary structure, and the capillary structure made of the copper powder can achieve the purpose of accelerating the diffusion of the liquid working medium. The mixed copper powder is only made of copper materials, and the copper has better heat conduction efficiency, so that the capillary layer made of the copper powder can effectively improve the heat dissipation efficiency of the vapor chamber, other filling media for making the capillary layer are not needed, and the thickness of the vapor chamber can be further reduced. The dendritic copper powder has branches, the spherical copper powder and the dendritic copper powder are convenient to support each other to form a porous structure after being mixed, the particle sizes of the spherical copper powder and the dendritic copper powder are small, the specific surface area of a capillary layer is easy to increase, and the spherical copper powder and the dendritic copper powder are easy to bond with each other after being hot-melted so as to form a stable porous structure after being cooled.
In some exemplary embodiments, the flow channel wall is lined with grooves having a size range of: the width of the groove is 20-150 μm, and the depth of the groove is 20-200 μm; the mixed copper powder is embedded on the inner wall of the groove on the wall surface of the runner.
Based on the embodiment, the copper powder particles can be conveniently attached within the preset roughness range, and the copper capillary layer formed after the heat treatment can be conveniently and stably attached to the wall surface of the flow channel. The phenomenon that the mixed copper powder is difficult to attach due to the fact that the wall surface of the flow channel is too smooth is avoided, and the phenomenon that the rough layer on the wall surface of the flow channel occupies too much space to increase the overall thickness of the soaking plate is avoided.
In some exemplary embodiments, the mass mixing ratio of the dendritic copper powder to the spherical copper powder is in a range of 6.2-7.4: 3.8 to 2.6.
Based on the above embodiment, in the above mass ratio range, the dendritic copper powder particles support each other, and the spherical copper powder particles are embedded in the gaps between the dendritic copper powder particles, so that the dendritic copper powder particles and the spherical copper powder particles are matched with each other to obtain the mixed copper powder with appropriate pore size and porosity, uniformity and stability. The usage amount of the dendritic copper powder is larger than that of the spherical copper powder, so that a porous structure can be formed more conveniently, and a framework with fluffy fine layers is favorably constructed.
In some exemplary embodiments, the spherical copper powder has a particle size in the range of 600 mesh to 2000 mesh; the grain diameter of the dendritic copper powder ranges from 3 mu m to 5 mu m.
Based on the above examples, both spherical copper powder and dendritic copper powder can be mixed with each other in the above particle size range, so that the prepared capillary layer can obtain pores and porosities in appropriate ranges. Meanwhile, the heat treatment temperature is convenient to control so that the surfaces of the copper powder particles are molten, and two adjacent copper powder particles are convenient to bond.
In some exemplary embodiments, the spherical copper powder includes first particles in a first particle size range, second particles in a second particle size range, and third particles in a third particle size range, the first, second, and third particle size ranges being 600 mesh to 800 mesh, 800 mesh to 1000 mesh, 1000 mesh to 2000 mesh, respectively; the mass mixing ratio of the first particles, the second particles and the third particles in the spherical copper powder is 6: 1-3.
Based on the above embodiment, spherical copper powder in a plurality of particle size ranges is mixed, and when spherical copper powder particles with large particle size fail to enter a certain gap, spherical copper powder particles with small particle size can enter the gap to tune the pore size. The particle size range of the spherical copper powder is divided into the three ranges, and the spherical copper powder particles with various particle sizes are added according to a certain proportion, so that the spherical copper powder particles with various particle sizes can be adaptively embedded among the dendritic copper powder particles with the particle size range of 3-5 mu m, and the pore size and the porosity of the prepared capillary layer can be better tuned.
In some exemplary embodiments, the mixed copper powder disposed on the wall surface of the flow channel occupies a cross-section of the flow channel on the surface of the heat dissipation substrate in a percentage ranging from 1.5% to 4%.
Based on the embodiment, the capillary layer prepared in the copper powder particle ratio range can obtain a proper specific surface area, so that the capillary layer can obtain good mass transfer power, and the capillary layer is not too thick to occupy too much flow channel space.
In some exemplary embodiments, after cooling the heat-treated heat-dissipating substrate, the hot-melted mixed copper powder can adhere to each other to form a capillary layer on the surface of the flow channel; the heat treatment comprises the following steps: and (2) conveying the heat dissipation substrate into a sintering furnace for heat treatment, wherein the inlet and outlet temperature range of the sintering furnace is 500-600 ℃, the temperature range of the constant temperature section is 650-800 ℃, the time range of the constant temperature section is 20-30 min, and the total treatment time range in the sintering furnace is 50-60 min.
Based on the embodiment, the mixed copper powder is hot-melted in a constant temperature stage, the temperature range of the constant temperature stage is set to be 650-800 ℃, the constant temperature time range is set to be 20-30 min, and the whole time range of the soaking plate in the sintering furnace is controlled to be 50-60 min, so that the surface layers of the mixed copper powder particles are hot-melted to be bonded with each other, and the phenomenon that the prepared capillary layer collapses because the copper powder particles are hot-melted to be liquefied is avoided.
In a second aspect, an embodiment of the present application provides a method for processing a vapor chamber, including:
providing two radiating substrates, etching a flow channel with a preset shape on the surface of the radiating substrate, and processing the wall surface of the flow channel to a preset roughness.
And arranging the mixed copper powder on the wall surface of the flow channel with the preset roughness.
One of the two radiating substrates is covered on the other radiating substrate, the runners on the two radiating substrates are butted to form a radiating channel, and the mixed copper powder on the wall surfaces of the two runners is connected to distribute the mixed copper powder on the wall surfaces of the radiating channel.
And pressing the two heat dissipation substrates and shaping. The heat treatment can be carried out before the two heat dissipation substrates are pressed together, or after the two heat dissipation substrates are pressed together and before shaping.
Based on the embodiment, the mixed copper powder is arranged on the wall surface of the runner firstly, and then the two heat dissipation substrates are pressed together, so that the mixed copper powder is conveniently and uniformly arranged on the wall surface of the runner, and the uniformity and stability of the prepared capillary layer are improved.
In a third aspect, embodiments of the present application provide a vapor chamber, including:
the heat dissipation substrate is internally provided with a flow channel, and the wall surface of the flow channel has preset roughness; and
the capillary layer is arranged on the wall surface of the flow channel with preset roughness, the capillary layer is a porous structure formed by carrying out heat treatment on mixed copper powder, carrying out heat melting and mutually bonding, and the mixed copper powder comprises dendritic copper powder and spherical copper powder.
Based on the soaking plate provided by the embodiment of the application, the dendritic copper powder and the spherical copper powder are mixed and then arranged on the wall surface of the flow channel, and a capillary layer is formed on the wall surface of the flow channel after hot melting, so that the heat transfer efficiency of the liquid working medium in the flow channel is improved through the capillary layer made of the copper powder, and the heat dissipation efficiency of the soaking plate is further improved. Under the same heat dissipation efficiency, the capillary layer is only made of copper materials, so that the space occupied by the capillary layer can be effectively reduced, and the purpose of reducing the thickness of the soaking plate is further achieved.
In a fourth aspect, embodiments of the present application provide an electronic device including a device body and a heat spreader, the heat spreader being manufactured by the method of processing a heat spreader as described above.
Based on the electronic device that this application embodiment provided, on the soaking board has the basis of better heat transfer efficiency, the electronic device who installs this application soaking board also has better radiating effect. The capillary layer of the soaking plate is made of copper materials only, so that the requirement of thinning the thickness of the soaking plate can be met, and the requirement of miniaturization design of the electronic device is further met.
The application provides a soaking plate surface treatment and soaking plate processing method, a soaking plate and an electronic device. The spherical copper powder and the dendritic copper powder have small particle size, and the specific surface area of a capillary layer is easy to increase. The dendritic copper powder also has branches or bulges, the spherical copper powder and the dendritic copper powder are convenient to support each other after being mixed to form a porous structure with better pore size and porosity, and the spherical copper powder and the dendritic copper powder are easy to bond each other after being hot-melted to form a stable porous structure after being cooled. Under equal radiating efficiency, the capillary layer is only made by the copper product, can effectively reduce the space that the capillary layer occupy, and attenuate soaking plate thickness further still can effectively reduce the thickness of the electron device who installs this application soaking plate.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a first flowchart of a method for processing a soaking plate according to an embodiment of the present application;
FIG. 2 is a schematic view showing a structure of a soaking plate according to an embodiment of the present invention after mixing dendritic copper powder and spherical copper powder;
fig. 3 is a cross-sectional view of a heat dissipating substrate having a roughened layer on a flow channel wall surface in a method of processing a soaking plate according to an embodiment of the present invention;
fig. 4 is a sectional view showing a mixed copper powder provided on the wall surface of a flow channel in the method of processing a soaking plate according to an embodiment of the present application;
fig. 5 is a cross-sectional view of two heat dissipating substrates covered in a method of processing a vapor chamber according to an embodiment of the present invention;
fig. 6 is a front view of a vapor chamber according to an embodiment of the present invention after two heat dissipation substrates are bonded;
FIG. 7 is a second flowchart of a method of fabricating a vapor chamber according to an embodiment of the present application;
fig. 8 is a cross-sectional view of a vapor chamber according to an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
The inventor finds that the capillary structure of the soaking plate in the related art is prepared by mixing a plurality of raw materials, so that a good heat dissipation effect is difficult to obtain, and the development of the soaking plate towards miniaturization is also difficult, so that the application provides a soaking plate surface treatment method to solve the problems in the soaking plate.
As shown in fig. 1, a method for processing a surface of a soaking plate provided in an embodiment of the present application specifically includes the following steps:
s101, obtaining mixed copper powder, wherein the mixed copper powder comprises spherical copper powder and dendritic copper powder.
The dendritic copper powder has a structure with a convex or branched surface, and can be prepared by an electrolytic method, for example, the electrolytic method can be used for preparing the dendritic copper powder, a highly polished stainless steel is used as a cathode, an electrolytic copper plate is used as an anode, an electrolyte can be a sulfate solution, the simple substance copper on the electrolytic copper plate is transferred to a stainless steel plate by applying voltage to the cathode and the anode, the stainless steel plate is taken out, and the simple substance copper is scraped off to prepare the dendritic copper powder.
The spherical copper powder is in the form of particles having a smooth surface, and can be produced by an atomization method, for example, by charging a molten copper solution in a container, allowing the copper solution to flow down through a small hole in the bottom of the container, providing a high-pressure nozzle at the outlet of the small hole, blowing off the copper solution flowing out through the small hole by the high-pressure nozzle, and providing a cooling liquid nozzle near the high-pressure nozzle, to rapidly cool the blown-off copper solution, thereby producing spherical copper powder having a fixed shape.
And uniformly mixing the spherical copper powder and the dendritic copper powder according to a preset proportion to obtain the required mixed copper powder.
S102, arranging the mixed copper powder on the wall surface of a flow channel with preset roughness in the heat dissipation substrate.
The wall surface of the heat dissipation plate forming the flow channel has roughness, so that the mixed copper powder can be attached to the wall surface of the flow channel. The copper powder may partially cover the flow channel walls or completely cover the flow channel walls. Preferably, the mixed copper powder can completely cover the wall surface of the flow channel so as to increase the specific surface area of the mixed copper powder filled in the flow channel.
And S103, carrying out heat treatment on the heat dissipation substrate until the mixed copper powder is melted and adhered to each other to form a capillary layer on the surface of the flow channel.
In the heat treatment process, the heat treatment temperature and the heat treatment time can be regulated and controlled, so that the surface layers of the single copper powder particles of the mixed copper powder are firstly melted, and the surface layers of two adjacent copper powder particles can be mutually bonded. It should be noted that the heat treatment temperature and the heat treatment time are controlled at the same time, so that the situation that the single copper powder particles are completely melted to be in a liquid state and flow freely is avoided, and gaps still exist between two adjacent copper powder particles.
According to the processing method of the soaking plate provided by the embodiment of the application, the mixed copper powder is filled in the flow channel on the surface of the heat dissipation substrate of the soaking plate, so that the mixed copper powder is melted to form the capillary structure, and the capillary structure made of the copper powder can achieve the purpose of accelerating the diffusion of the liquid working medium. The mixed copper powder is only made of copper materials, and the copper has better heat conduction efficiency, so that the capillary layer made of the copper powder can effectively improve the heat dissipation efficiency of the vapor chamber, other filling media for making the capillary layer are not needed, and the thickness of the vapor chamber can be further reduced. The dendritic copper powder is provided with branches or bulges, and the spherical copper powder and the dendritic copper powder are mixed and then are convenient to support each other to form a porous structure. In addition, the spherical copper powder and the dendritic copper powder are small in particle size, the specific surface area of the prepared capillary layer is easily increased after the spherical copper powder and the dendritic copper powder are mixed with each other, and the spherical copper powder and the dendritic copper powder are easily bonded with each other after hot melting so as to form a stable capillary layer after cooling.
The specific surface area of the capillary layer is increased, so that the mass transfer power of the capillary layer to the liquid working medium can be effectively increased, copper powder particles with a small particle size range can be selected, and the wall surface of the flow channel is provided with roughness, so that the copper powder particles with small particle sizes can be conveniently attached to the rough wall surface of the flow channel. In some exemplary embodiments, the flow channel wall is filled with grooves, and the mixed copper powder is embedded on the inner walls of the grooves of the flow channel wall. The grooves may have a groove width in the range of 20 μm to 150 μm, for example, the grooves may have a groove width in the range of 20 μm, 50 μm, 100 μm, 150 μm, etc., and the grooves may have a groove depth in the range of 20 μm to 200 μm, for example, the grooves may have a depth in the range of 20 μm, 60 μm, 100 μm, 150 μm, 200 μm, etc. Under the size range, copper powder particles can be conveniently attached, and a copper capillary layer formed after heat treatment can be conveniently and stably attached to the wall surface of the flow channel. When the size of the groove on the wall surface of the flow channel is smaller than the lower limit of the size range, the wall surface of the flow channel is too smooth, so that copper powder particles are difficult to attach, the copper powder particles can fall off from the wall surface of the flow channel under slight external acting force, and the uniformity of a capillary layer prepared by final processing is difficult to control. When the size of the groove on the wall surface of the runner is larger than the upper limit of the size range, the wall surface of the runner is too rough, so that the copper powder particles can be stably attached to the wall surface of the runner, but the roughness is too large, so that the rough layer needs to occupy more installation space, and the thickness of the soaking plate is not favorably reduced.
Because the surface of a single dendritic copper powder particle is provided with bulges or branches, two adjacent dendritic copper powders are difficult to compactly arrange, and the size and the porosity of pores between two adjacent dendritic copper powders are large. The surface of a single spherical copper powder particle is smooth, and two adjacent spherical copper powder particles are mutually and compactly arranged in a sliding manner, so that the pore size and the porosity between the two adjacent spherical copper powder particles are small. The large or small pore size and porosity are not favorable for the suction capacity of the finally prepared capillary layer to the liquid working medium. As shown in fig. 2, the dendritic copper powder particles 120 and the spherical copper powder particles 110 are mixed, so that the spherical copper powder particles 110 can be embedded between the protrusions or branches 121 of the dendritic copper powder particles 120, and the gaps between the dendritic copper powder particles 120 can be effectively filled, thereby facilitating the regulation and control of the pore size and porosity of the prepared capillary layer.
In some exemplary embodiments, the mass mixing ratio of the dendritic copper powder to the spherical copper powder is in a range of 6.2-7.4: 3.8 to 2.6. For example, the mass mixing ratio of the dendritic copper powder to the spherical copper powder may be 6.2: 3.8, 6.8: 3.2 or 7.4: 2.6, etc. Under the mass proportion range, the dendritic copper powder particles are mutually supported, and the spherical copper powder particles are embedded in gaps among the dendritic copper powder particles, so that the dendritic copper powder particles and the spherical copper powder particles are mutually matched to obtain the mixed copper powder with proper pore size and porosity, uniformity and stability. The usage amount of the dendritic copper powder is larger than that of the spherical copper powder, so that a porous structure can be formed more conveniently, and a framework with fluffy fine layers is favorably constructed. When the mass mixing ratio of the dendritic copper powder and the spherical copper powder is smaller than the ratio range, the using amount of spherical copper powder particles is too large, so that the porosity of a finally prepared capillary layer is too low. When the mass mixing ratio of the dendritic copper powder and the spherical copper powder is larger than the ratio range, the using amount of the dendritic copper powder particles is too large, the spherical copper powder particles are difficult to meet the filling requirement, and the finally obtained porosity of the capillary layer is too large.
The size of the individual dendritic copper powder particles and the individual spherical copper powder particles will also determine the pore size and porosity of the pores in the capillary layer produced. In some exemplary embodiments, the spherical copper powder has a particle size in the range of 600 mesh to 2000 mesh, for example, the spherical copper powder may have a particle size of 600 mesh, 800 mesh, 1000 mesh, 1500 mesh, 2000 mesh, or the like. The particle size of the dendritic copper powder is in the range of 3 μm to 5 μm, for example, the particle size of the dendritic copper powder may be in the range of 3 μm, 4 μm, or 5 μm. Under the particle size range, the spherical copper powder and the dendritic copper powder can be mixed with each other, so that the prepared capillary layer can obtain the pore size and the porosity in a proper range. Meanwhile, the heat treatment temperature is convenient to control so that the surfaces of the copper powder particles are molten, and two adjacent copper powder particles are convenient to bond.
Furthermore, the dendritic copper powder with the single particle size can be selected, the dendritic copper powder with the preset particle size range can also be selected, and considering that the process difficulty for preparing the dendritic copper powder with the single particle size by adopting an electrolytic method is higher, in the embodiment of the application, the mixed dendritic copper powder with the particle size range of 3-5 microns is selected, so that the dendritic copper powder particles with the smaller particle size and the dendritic copper powder particles with the larger particle size are embedded with each other, and the gap between every two adjacent dendritic copper powder particles is tuned.
Similarly, spherical copper powder with a single particle size can be selected, and spherical copper powder with a preset particle size range can also be selected. In some exemplary embodiments, the spherical copper powder includes first particles in a first particle size range, second particles in a second particle size range, and third particles in a third particle size range, the first, second, and third particle size ranges being 600 mesh to 800 mesh, 800 mesh to 1000 mesh, 1000 mesh to 2000 mesh, respectively; the mass mixing ratio of the first particles, the second particles, and the third particles in the spherical copper powder is in a range of 6:1 to 3, and for example, the mass mixing ratio of the first particles, the second particles, and the third particles may be 6: 1: 3. 6: 2: 2 or 6: 3: 1. spherical copper powder in various particle size ranges is mixed, and when spherical copper powder particles with large particle sizes cannot enter a certain gap, spherical copper powder with small particle sizes can enter the gap to tune the size of the pore. The particle size range of the spherical copper powder is divided into the three ranges, and the spherical copper powder particles with various particle sizes are added according to a certain proportion, so that the spherical copper powder particles with various particle sizes can be adaptively embedded among the dendritic copper powder particles with the particle size range of 3-5 mu m, and the pore size and the porosity of the prepared capillary layer can be better tuned.
The mixed copper powder can be partially covered on the wall surface of the flow channel, and can also be completely covered on the wall surface of the flow channel, and preferably, the mixed copper powder is completely covered on the wall surface of the flow channel, so that the contact area of the finally prepared capillary layer and the liquid working medium can be increased, and the mass transfer power is improved. On the basis that the mixed copper powder is completely covered on the wall surface of the flow channel, in some exemplary embodiments, the percentage of the mixed copper powder arranged on the wall surface of the flow channel occupying the cross section of the flow channel on the surface of the heat dissipation substrate is in the range of 1.5% -4%. It can be understood that after the two heat dissipation substrates are pressed together, the two runners on the two heat dissipation substrates are butted to form a heat dissipation channel, and the percentage of the mixed copper powder occupying the cross section of the heat dissipation channel ranges from 3% to 8%, for example, the percentage of the mixed copper powder occupying the cross section of the heat dissipation channel may be 3%, 6%, 8%, or the like. The capillary layer prepared in the proportion range of the copper powder particles can obtain a proper specific surface area, so that the capillary layer can obtain good mass transfer power, and the capillary layer is too thick and occupies too much flow channel space.
In some exemplary embodiments, after cooling the heat-treated heat-dissipating substrate, the hot-melted mixed copper powder can adhere to each other to form a capillary layer on the surface of the flow channel. Specifically, the heat treatment process can be to send the heat dissipation substrate into a sintering furnace for heat treatment, wherein the inlet and outlet temperature range of the sintering furnace is 500-600 ℃, the temperature range of the constant temperature section is 650-800 ℃, the time range of the constant temperature section is 20-30 min, and the total treatment time range in the sintering furnace is 50-60 min. The mixed copper powder is hot-melted in a constant temperature stage, the temperature range of the constant temperature stage is 650-800 ℃, the constant temperature time range is 20-30 min, and the whole time range of the soaking plate in the sintering furnace is controlled to be 50-60 min, so that the surface layers of the mixed copper powder particles can be hot-melted to be mutually bonded, and the phenomenon that the prepared capillary layer collapses because the copper powder particles are hot-melted to be liquefied is avoided.
The embodiment of the application also provides a processing method of the soaking plate, wherein the soaking plate can comprise two radiating substrates made of metal materials, and a radiating channel is formed in the soaking plate after the two radiating substrates are pressed. For example, the two heat dissipation substrates may be aluminum heat dissipation substrates or copper heat dissipation substrates, or one of the two heat dissipation substrates may be a copper heat dissipation substrate and the other may be an aluminum heat dissipation substrate. The mixed copper powder can be arranged on the wall surface of the runner formed by the radiating substrates before the two radiating substrates are pressed, and can also be arranged on the wall surface of the runner between the two radiating substrates after the two radiating substrates are pressed.
When the mixed copper powder is disposed on the flow channel wall of the heat dissipation substrate before the two heat dissipation substrates are bonded, referring to fig. 3 to 5, in some exemplary embodiments, the method for processing the heat dissipation substrate may include:
s201, providing two heat dissipation substrates 210, etching a flow channel 220 with a predetermined shape on the surface of the heat dissipation substrate 210, and processing the wall surface of the flow channel 220 to a predetermined roughness, so that a rough layer 230 is formed on the surface of the flow channel 220.
The wall surface of the flow channel 220 may be treated by plasma bombardment or the like to process the wall surface of the flow channel 220 to a predetermined roughness.
S202, the mixed copper powder 240 is disposed on the wall surface of the flow channel 220 having a predetermined roughness.
In the embodiment of the application, the mixed copper powder with a small particle size is selected, and the mixed copper powder 240 is coated on the wall surface of the flow channel 220 with the preset roughness, so that copper powder particles can be hung, and light falling and deposition cannot be caused. The mixed copper powder 240 can be arranged on the wall surface of the runner by adopting a brush coating, a spray coating and the like. When necessary, blowing and sucking can be carried out at a uniform and stable wind speed, and the mixed copper powder which is not attached to the surface layer is removed, so that the phenomenon that the uniformity of the prepared capillary layer is influenced by the deposition of the mixed copper powder which is not attached to the surface layer under the action of gravity in the process of moving the heat dissipation substrate is avoided.
S203, covering one of the two heat dissipation substrates 210 on the other heat dissipation substrate, and butting the flow channels 220 on the two heat dissipation substrates 210 to form the heat dissipation channel 250, and connecting the mixed copper powder 240 on the wall surfaces of the two flow channels 220 to distribute the mixed copper powder 240 on the wall surface of the heat dissipation channel 250, so that the capillary layer is distributed on the whole wall surface of the heat dissipation channel 250, thereby improving the mass transfer power of the capillary layer.
And S204, pressing the two heat dissipation substrates 210 and shaping.
The heat treatment can be performed before the two heat dissipation substrates 210 are pressed together, or after the two heat dissipation substrates 210 are pressed together and before the shaping is performed, so that the mixed copper powder 240 forms a capillary layer. For example, after the flow channel 220 is processed on the two heat dissipation substrates 210, the mixed copper powder 240 is respectively disposed on the wall surfaces of the flow channel 220, and then the two heat dissipation substrates 210 with the mixed copper powder 240 are directly subjected to heat treatment, so that the mixed copper powder 240 forms a capillary layer with a stable structure on the wall surfaces of the flow channel 220, and then the two heat dissipation substrates 210 are pressed and shaped, so as to improve the uniformity and stability of the prepared capillary layer.
As shown in fig. 6, the shaping process of the bonded heat dissipation substrate 210 may include disposing liquid filling pipes 270 at two ends of the heat dissipation channel 250, where the liquid filling pipes 270 form the inlets 251 of the heat dissipation channel 250. Liquid working medium for heat transfer is poured into the heat dissipation channel 250 from the inlet 251, and then the inlet 251 is closed to enclose the liquid working medium. The liquid working medium can be partially filled in the heat dissipation channel 250 so as to provide space for gas-liquid conversion of the liquid working medium. The liquid working fluid may be, but is not limited to, water, liquid nitrogen, ammonia, isobutane, acetone, methanol, ethanol, HFC refrigerants, and the like.
After the liquid working medium is filled, the heat dissipation channel 250 filled with the liquid working medium is vacuumized through the liquid filling pipe 270, gas in the heat dissipation channel 250 is removed, and then the liquid filling pipe 270 is sealed, so that the interior of the heat dissipation channel 250 is in a negative pressure environment, gas-liquid conversion of the liquid working medium is facilitated, and the heat dissipation efficiency is improved.
The method for processing the soaking plate in the present application will be described below by referring to fig. 7, which specifically includes the following steps:
s301, providing two heat dissipation substrates, and etching flow channels with preset shapes on the surfaces of the two heat dissipation substrates respectively.
S302, respectively carrying out plasma bombardment treatment on the wall surfaces of the flow channels on the two heat dissipation substrates, and processing grooves on the wall surfaces of the flow channels, wherein the width range of the grooves can be 90-100 μm, and the depth range of the grooves can be 95-105 μm.
S303, preparing mixed copper powder, and preparing the mixed copper powder with the formula A, the formula B and the formula C according to the mass ratio in the table 1.
TABLE 1
Figure BDA0002907053660000121
Figure BDA0002907053660000131
S304, respectively coating the mixed copper powder of the formula A, the formula B and the formula C on the wall surface of the flow channel with preset roughness on the heat dissipation substrate.
S305, conveying the heat dissipation substrate coated with the mixed copper powder into a sintering furnace, controlling the inlet and outlet temperature range of the sintering furnace to be 500-600 ℃, the temperature of a constant temperature section to be 755 ℃, the time range of the constant temperature section to be 25min, and putting the heat dissipation substrate into the sintering furnace for total processing time to be 50-60 min.
And S306, taking the heat dissipation substrate out of the sintering furnace, and cooling the mixed copper powder to form a capillary layer. And respectively pressing the two heat dissipation substrates provided with the mixed copper powder with the same proportion, so that the flow channels on the two heat dissipation substrates form heat dissipation channels, and the capillary layers on the wall surfaces of the two flow channels are connected to form capillary layers distributed in the whole heat dissipation channel.
S307, welding a liquid filling pipe at the inlet of the flow passage, and filling liquid working media into the flow passage through the liquid filling pipe, wherein the liquid working media can be acetone or water and the like.
And S308, vacuumizing the flow channel filled with the liquid working medium through the liquid filling pipe, discharging gas in the flow channel, and then sealing the liquid filling pipe to enable the flow channel to be in a negative pressure environment.
By the method in the above steps S301 to S306, 9 kinds of heat dissipation plates were prepared by coating A, B, C mixed copper powders in three formulations on the wall surface of the flow channel, respectively, wherein the mixed copper powders occupy 3%, 5% and 8% of the cross section of the heat dissipation channel, and accordingly, the porosity of the capillary layer in the 9 kinds of heat dissipation plates is shown in table 2, and the pore size of the pore of the capillary layer in the 9 kinds of heat dissipation plates is shown in table 3.
TABLE 2
Proportion of mixed copper powder 3% 5% 8%
Formulation A 46.3% 47.9% 45.2%
Formulation B 47.5% 48.1% 46.4%
Formulation C 53.2% 50.4% 49.8%
TABLE 3
Proportion of mixed copper powder 3% 5% 8%
Formulation A 8-11μm 9-12μm 9-14μm
Formulation B 9-13μm 10-15μm 8-12μm
Formulation C 11-16μm 12-17μm 10-14μm
From the results in table 2, it can be seen that the porosity of the capillary layer is the largest when the percentage of the mixed copper powder of formula C occupying the cross section of the flow channel is 3% under different addition amounts of the three mixed copper powders of formula a, formula B and formula C.
From the results in table 3, it can be seen that the pore diameter of the capillary layer is the largest when the percentage of the mixed copper powder of formula C occupying the cross section of the flow channel is 5% in the three mixed copper powders of formula a, formula B and formula C at different addition amounts.
The application continues to carry out capillary layer vertical suction liquid working medium detection experiments on the 9 soaking plates prepared in the table 2 and the table 3 respectively, and judges the suction capacity of the 9 capillary layers to the liquid working medium by measuring the quality of the liquid working medium sucked by the capillary layers. Specifically, the aperture of the flow channel in the soaking plate is 3mm, the liquid working medium is deionized water, the position of the soaking plate is adjusted to enable the flow channel to be arranged in the vertical direction, the inlet of the flow channel is immersed in the deionized water, the soaking plate is taken out after the capillary layer is kept still until the capillary layer does not suck the deionized water any more, the mass of the deionized water sucked by the capillary layer is counted, and the mass of the deionized water sucked by the capillary layer is shown in table 5.
TABLE 5
Proportion of mixed copper powder 3% 5% 8%
Formulation A 0.07g 0.08g 0.06g
Formulation B 0.09g 0.11g 0.08g
Formulation C 0.13g 0.16g 0.10g
As can be seen from the results in table 5, the capillary layer in the 9 soaking plates prepared in the above examples has the ability to pump deionized water. When the percentage of the mixed copper powder occupying the cross section of the flow channel in the formula C is 5%, the prepared capillary layer has the best suction capacity on the deionized water, which shows that the capillary layer has the best mass transfer capacity on the deionized water, and the capillary layer can be applied to the soaking plate to improve the heat dissipation efficiency of the soaking plate.
Referring to fig. 8, the heat spreader 200 may include a heat spreader substrate and a capillary layer 290.
The surface of the heat dissipation substrate is provided with a flow channel, and the wall surface of the flow channel is provided with preset roughness. Specifically, the heat dissipation substrate includes two metal heat dissipation substrates 210, a flow channel is etched on the surface of each of the two metal heat dissipation substrates 210, a predetermined roughness is processed on the wall surface of the flow channel, and after the two metal heat dissipation substrates 210 are pressed, the flow channel on the two metal heat dissipation substrates 210 forms the heat dissipation channel 250.
The capillary layer 290 is arranged on the wall surface of the flow channel 250 with preset roughness, the capillary layer 290 is a porous capillary layer formed by heat treatment of mixed copper powder, thermal melting and mutual bonding of the mixed copper powder, and the mixed copper powder comprises dendritic copper powder and spherical copper powder.
The vapor chamber 200 further comprises a liquid working medium 280 arranged in the heat dissipation channel 250, a part of the capillary layer 290 is immersed in the liquid working medium 280, the capillary layer 290 sucks the liquid working medium 280 to diffuse, and when external heat is received, the capillary layer 290 sucks the liquid working medium 280 to promote the liquid working medium 280 to perform gas-liquid conversion rapidly, so that the heat dissipation efficiency of the vapor chamber 200 is improved.
The two ends of the flow channel in the soaking plate 200 can be sealed, and the inside of the flow channel is in a negative pressure state, so that the gasification temperature of the liquid working medium 280 is reduced, the mass transfer power is improved, and the heat dissipation efficiency of the soaking plate 200 is further improved.
According to the soaking plate 200 provided by the embodiment of the application, the dendritic copper powder and the spherical copper powder are mixed and then arranged on the wall surface of the heat dissipation channel 250, and the capillary layer 290 is formed on the wall surface of the heat dissipation channel 250 after being melted, so that the heat transfer efficiency of the liquid working medium 280 in the flow channel is improved through the capillary layer 290 made of the copper powder, and further, the heat dissipation efficiency of the soaking plate 200 is improved. Under the same heat dissipation efficiency, the capillary layer 290 is made of copper only, so that the space occupied by the capillary layer 290 can be effectively reduced, and the purpose of reducing the thickness of the soaking plate 200 is further achieved.
The embodiment of the application also provides an electronic device, which comprises a device main body and the soaking plate 200, wherein the soaking plate 200 can be installed in the device main body, and the soaking plate 200 is manufactured by the soaking plate processing method.
Based on the electronic device that this application embodiment provided, on the basis that soaking board 200 has better heat transfer efficiency, the electronic device who installs this application soaking board 200 also has better radiating effect. The capillary layer of the soaking plate 200 is made of copper material only, so that the requirement of thinning the thickness of the soaking plate can be met, and the requirement of miniaturization design of the electronic device is further met.
The same or similar reference numerals in the drawings of the present embodiment correspond to the same or similar components; in the description of the present application, it is to be understood that if there is an orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", etc. based on the orientation or positional relationship shown in the drawings, it is only for convenience of description and simplification of description, but it is not intended to indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, the terms describing the positional relationship in the drawings are only for illustrative purposes and are not to be construed as limitations of the present patent, and specific meanings of the above terms may be understood by those skilled in the art according to specific situations.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims (10)

1. A surface treatment method of a soaking plate is characterized by comprising the following steps:
obtaining mixed copper powder, wherein the mixed copper powder comprises spherical copper powder and dendritic copper powder;
arranging the mixed copper powder on the surface of a heat dissipation substrate of the soaking plate, wherein the surface of the heat dissipation substrate of the soaking plate is provided with a runner wall surface with preset roughness;
and carrying out heat treatment on the heat dissipation substrate until the mixed copper powder is melted and adhered to the surface of the flow channel to form a capillary layer.
2. The soaking plate surface treatment method according to claim 1, wherein grooves are distributed on the wall surface of the flow channel, and the size range of the grooves is as follows: the width of the groove is 20-150 μm, and the depth of the groove is 20-200 μm; the mixed copper powder is embedded on the inner wall of the groove on the wall surface of the runner.
3. The soaking plate surface treatment method according to any one of claims 1 to 2, wherein the mass mixing ratio of the dendritic copper powder to the spherical copper powder is in the range of 6.2 to 7.4: 3.8 to 2.6.
4. The soaking plate surface treatment method according to any one of claims 1 to 2, wherein the spherical copper powder has a particle size ranging from 600 mesh to 2000 mesh; the particle size range of the dendritic copper powder is 3-5 mu m.
5. The soaking plate surface treatment method according to any one of claims 1 to 2, wherein the spherical copper powder comprises first particles in a first particle size range, second particles in a second particle size range, and third particles in a third particle size range, and the first particle size range, the second particle size range, and the third particle size range are 600 mesh to 800 mesh, 800 mesh to 1000 mesh, and 1000 mesh to 2000 mesh, respectively; the mass mixing ratio of the first particles, the second particles and the third particles in the spherical copper powder ranges from 6:1 to 3.
6. The soaking plate surface treatment method according to any one of claims 1 to 2, wherein the percentage of the mixed copper powder provided on the runner wall surface occupying the runner cross section of the heat dissipating substrate surface is in a range of 1.5% to 4%.
7. The method for surface treatment of a soaking plate according to claim 1, wherein the mixed copper powders melted by heat are bonded to each other on the surface of the runner to form a capillary layer after cooling the heat-treated heat-dissipating substrate; the heat treatment comprises: and conveying the heat dissipation substrate into a sintering furnace for heat treatment, wherein the inlet and outlet temperature range of the sintering furnace is 500-600 ℃, the temperature range of the constant temperature section is 650-800 ℃, the time range of the constant temperature section is 20-30 min, and the total treatment time range of the heat dissipation substrate in the sintering furnace is 50-60 min.
8. A method for processing a soaking plate is characterized by comprising the following steps:
providing two radiating substrates, etching a runner with a preset shape on the surface of each radiating substrate, and processing the wall surface of the runner to a preset roughness;
arranging the mixed copper powder on the wall surface of the flow channel with the preset roughness;
covering one of the two heat dissipation substrates on the other heat dissipation substrate, enabling the runners on the two heat dissipation substrates to be in butt joint to form a runner, and enabling the mixed copper powder on the wall surfaces of the two runners to be connected to enable the mixed copper powder to be fully distributed on the wall surfaces of the runners;
and pressing the two heat dissipation substrates and shaping, wherein the heat treatment can be carried out before the two heat dissipation substrates are pressed, or can be carried out after the two heat dissipation substrates are pressed and before the shaping, so that the mixed copper powder forms a capillary layer.
9. A vapor chamber, comprising:
the heat dissipation substrate is internally provided with a flow channel, and the wall surface of the flow channel has preset roughness; and
and the capillary layer is arranged on the wall surface of the flow channel with the preset roughness, the capillary layer is formed by carrying out heat treatment on mixed copper powder, carrying out heat melting and mutually bonding, and the mixed copper powder comprises dendritic copper powder and spherical copper powder.
10. An electronic device, comprising:
a device main body; and
a soaking plate manufactured by the method for processing a soaking plate described in the above claim 8.
CN202110078758.7A 2021-01-20 2021-01-20 Vapor chamber surface treatment and vapor chamber processing method, vapor chamber and electronic device Active CN112846194B (en)

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