CN112838002B - 基板处理方法及等离子体处理装置 - Google Patents

基板处理方法及等离子体处理装置

Info

Publication number
CN112838002B
CN112838002B CN202011285147.1A CN202011285147A CN112838002B CN 112838002 B CN112838002 B CN 112838002B CN 202011285147 A CN202011285147 A CN 202011285147A CN 112838002 B CN112838002 B CN 112838002B
Authority
CN
China
Prior art keywords
gas
film
processing method
substrate processing
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011285147.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN112838002A (zh
Inventor
须田隆太郎
户村幕树
田中康基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN202511189923.0A priority Critical patent/CN121034951A/zh
Publication of CN112838002A publication Critical patent/CN112838002A/zh
Application granted granted Critical
Publication of CN112838002B publication Critical patent/CN112838002B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN202011285147.1A 2019-11-25 2020-11-17 基板处理方法及等离子体处理装置 Active CN112838002B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202511189923.0A CN121034951A (zh) 2019-11-25 2020-11-17 基板处理方法及等离子体处理装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019-212425 2019-11-25
JP2019212425 2019-11-25
JP2020154668A JP7604145B2 (ja) 2019-11-25 2020-09-15 基板処理方法及びプラズマ処理装置
JP2020-154668 2020-09-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202511189923.0A Division CN121034951A (zh) 2019-11-25 2020-11-17 基板处理方法及等离子体处理装置

Publications (2)

Publication Number Publication Date
CN112838002A CN112838002A (zh) 2021-05-25
CN112838002B true CN112838002B (zh) 2025-09-16

Family

ID=75923065

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202011285147.1A Active CN112838002B (zh) 2019-11-25 2020-11-17 基板处理方法及等离子体处理装置
CN202511189923.0A Pending CN121034951A (zh) 2019-11-25 2020-11-17 基板处理方法及等离子体处理装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202511189923.0A Pending CN121034951A (zh) 2019-11-25 2020-11-17 基板处理方法及等离子体处理装置

Country Status (5)

Country Link
JP (2) JP7604145B2 (enExample)
KR (1) KR20210064066A (enExample)
CN (2) CN112838002B (enExample)
SG (1) SG10202011423RA (enExample)
TW (2) TWI878384B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116034454A (zh) * 2021-04-28 2023-04-28 东京毅力科创株式会社 蚀刻方法
JP7099675B1 (ja) 2021-07-27 2022-07-12 東京エレクトロン株式会社 エッチング方法、半導体装置の製造方法、プログラムおよびプラズマ処理装置
JP7763251B2 (ja) * 2021-07-27 2025-10-31 東京エレクトロン株式会社 エッチング方法、半導体装置の製造方法、エッチングプログラムおよびプラズマ処理装置
KR102646804B1 (ko) * 2021-08-25 2024-03-12 주식회사 테스 실리콘 질화물층을 포함하는 기판을 처리하는 방법
JP7667060B2 (ja) * 2021-10-22 2025-04-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
JP7674223B2 (ja) * 2021-11-01 2025-05-09 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
JP7348672B2 (ja) * 2021-12-03 2023-09-21 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
JPWO2024043166A1 (enExample) * 2022-08-22 2024-02-29
WO2025126937A1 (ja) * 2023-12-14 2025-06-19 東京エレクトロン株式会社 被膜形成方法、プラズマ処理方法、及び、プラズマ処理装置
KR20250124941A (ko) * 2024-02-14 2025-08-21 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016225567A (ja) * 2015-06-03 2016-12-28 東京エレクトロン株式会社 クリーニング方法
JP2019009403A (ja) * 2017-06-21 2019-01-17 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP2019145780A (ja) * 2018-02-15 2019-08-29 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06168914A (ja) * 1992-05-13 1994-06-14 Tokyo Electron Ltd エッチング処理方法
JPH07147273A (ja) * 1993-11-24 1995-06-06 Tokyo Electron Ltd エッチング処理方法
KR100518606B1 (ko) * 2003-12-19 2005-10-04 삼성전자주식회사 실리콘 기판과 식각 선택비가 큰 마스크층을 이용한리세스 채널 어레이 트랜지스터의 제조 방법
US8058179B1 (en) * 2008-12-23 2011-11-15 Novellus Systems, Inc. Atomic layer removal process with higher etch amount
CN102498550B (zh) * 2009-09-02 2014-07-16 积水化学工业株式会社 用于蚀刻含硅膜的方法
JP6180824B2 (ja) * 2013-07-02 2017-08-16 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
US9824865B2 (en) * 2014-03-05 2017-11-21 Lam Research Corporation Waferless clean in dielectric etch process
JP6423643B2 (ja) 2014-08-08 2018-11-14 東京エレクトロン株式会社 多層膜をエッチングする方法
JP6393574B2 (ja) * 2014-10-09 2018-09-19 東京エレクトロン株式会社 エッチング方法
US9922840B2 (en) * 2015-07-07 2018-03-20 Applied Materials, Inc. Adjustable remote dissociation
JP6920309B2 (ja) * 2016-01-13 2021-08-18 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エッチングハードウェアに対する水素プラズマベース洗浄処理
JP6689159B2 (ja) * 2016-08-22 2020-04-28 東京エレクトロン株式会社 エッチング方法およびｄｒａｍキャパシタの製造方法
US10607850B2 (en) * 2016-12-30 2020-03-31 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures
US20180286707A1 (en) * 2017-03-30 2018-10-04 Lam Research Corporation Gas additives for sidewall passivation during high aspect ratio cryogenic etch
JP7109165B2 (ja) * 2017-05-30 2022-07-29 東京エレクトロン株式会社 エッチング方法
JP6948181B2 (ja) * 2017-08-01 2021-10-13 東京エレクトロン株式会社 多層膜をエッチングする方法
US11075084B2 (en) * 2017-08-31 2021-07-27 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Chemistries for etching multi-stacked layers
KR102741055B1 (ko) * 2018-02-15 2024-12-10 도쿄엘렉트론가부시키가이샤 플라즈마 에칭 방법 및 플라즈마 에칭 장치
KR20200124673A (ko) * 2018-03-02 2020-11-03 도쿄엘렉트론가부시키가이샤 3차원 반도체 기억 장치의 제조 방법
CN118588549A (zh) * 2018-03-16 2024-09-03 朗姆研究公司 在电介质中的高深宽比特征的等离子体蚀刻化学过程

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016225567A (ja) * 2015-06-03 2016-12-28 東京エレクトロン株式会社 クリーニング方法
JP2019009403A (ja) * 2017-06-21 2019-01-17 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP2019145780A (ja) * 2018-02-15 2019-08-29 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置

Also Published As

Publication number Publication date
JP2024177528A (ja) 2024-12-19
JP7763312B2 (ja) 2025-10-31
TW202533297A (zh) 2025-08-16
TW202133261A (zh) 2021-09-01
SG10202011423RA (en) 2021-06-29
JP2021090039A (ja) 2021-06-10
CN121034951A (zh) 2025-11-28
CN112838002A (zh) 2021-05-25
KR20210064066A (ko) 2021-06-02
TWI878384B (zh) 2025-04-01
JP7604145B2 (ja) 2024-12-23

Similar Documents

Publication Publication Date Title
CN112838002B (zh) 基板处理方法及等离子体处理装置
US20220285169A1 (en) Substrate processing method and plasma processing apparatus
TWI760555B (zh) 蝕刻方法
JP6956288B2 (ja) 基板処理方法、プラズマ処理装置、及びエッチングガス組成物
KR102459129B1 (ko) 기판 처리 방법 및 플라즈마 처리 장치
CN106057666B (zh) 蚀刻方法
CN105390387B (zh) 蚀刻方法
JP6339961B2 (ja) エッチング方法
CN109326517B (zh) 对多层膜进行蚀刻的方法
CN116206968A (zh) 蚀刻方法及等离子体处理装置
EP3905307B1 (en) Substrate processing method and plasma processing apparatus
KR20210055015A (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
CN115312381A (zh) 基板处理装置和基板处理方法
TWI899193B (zh) 基板處理方法及電漿處理裝置
TW202213517A (zh) 基板處理方法及電漿處理裝置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB03 Change of inventor or designer information

Inventor after: Kagita Ryutaro

Inventor after: Family village curtain tree

Inventor after: Tanaka Yasumoto

Inventor before: Kagita Ryutaro

Inventor before: Family village curtain tree

CB03 Change of inventor or designer information
GR01 Patent grant
GR01 Patent grant