CN112794714B - 一种氧化锌电阻片及其制备方法与调控其电位梯度及通流能力的方法 - Google Patents
一种氧化锌电阻片及其制备方法与调控其电位梯度及通流能力的方法 Download PDFInfo
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- CN112794714B CN112794714B CN202110397856.7A CN202110397856A CN112794714B CN 112794714 B CN112794714 B CN 112794714B CN 202110397856 A CN202110397856 A CN 202110397856A CN 112794714 B CN112794714 B CN 112794714B
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 144
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 69
- 238000002360 preparation method Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 title abstract description 18
- 230000001105 regulatory effect Effects 0.000 title description 5
- 230000001276 controlling effect Effects 0.000 title description 4
- 239000002994 raw material Substances 0.000 claims abstract description 27
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 15
- 238000007906 compression Methods 0.000 claims abstract description 14
- 230000006835 compression Effects 0.000 claims abstract description 14
- 238000002844 melting Methods 0.000 claims abstract description 13
- 230000008018 melting Effects 0.000 claims abstract description 13
- 238000005469 granulation Methods 0.000 claims abstract description 11
- 230000003179 granulation Effects 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims abstract description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- JLDSOYXADOWAKB-UHFFFAOYSA-N aluminium nitrate Chemical compound [Al+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O JLDSOYXADOWAKB-UHFFFAOYSA-N 0.000 claims description 10
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 10
- UPWOEMHINGJHOB-UHFFFAOYSA-N oxo(oxocobaltiooxy)cobalt Chemical compound O=[Co]O[Co]=O UPWOEMHINGJHOB-UHFFFAOYSA-N 0.000 claims description 10
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 8
- 238000000227 grinding Methods 0.000 claims description 6
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 238000002788 crimping Methods 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- GNMQOUGYKPVJRR-UHFFFAOYSA-N nickel(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Ni+3].[Ni+3] GNMQOUGYKPVJRR-UHFFFAOYSA-N 0.000 claims description 4
- PZFKDUMHDHEBLD-UHFFFAOYSA-N oxo(oxonickeliooxy)nickel Chemical compound O=[Ni]O[Ni]=O PZFKDUMHDHEBLD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004576 sand Substances 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 abstract description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052726 zirconium Inorganic materials 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 3
- 238000009766 low-temperature sintering Methods 0.000 abstract description 3
- 238000000280 densification Methods 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 4
- 238000009472 formulation Methods 0.000 description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Inorganic materials [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229940098458 powder spray Drugs 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- APTZNLHMIGJTEW-UHFFFAOYSA-N pyraflufen-ethyl Chemical compound C1=C(Cl)C(OCC(=O)OCC)=CC(C=2C(=C(OC(F)F)N(C)N=2)Cl)=C1F APTZNLHMIGJTEW-UHFFFAOYSA-N 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明涉及电力材料技术领域，具体公开了一种含锆多铋的高电位梯度大通流氧化锌电阻片。本发明通过对氧化锌电阻片的原料配方进行改良，改变了ZrO2、Bi2O3以及熔融剂的占比，实现了对氧化锌压敏电阻电位梯度与通流密度的调控。进一步采用砂磨与离心造粒工艺促进氧化锌电阻原料粉体形貌均匀，采用双面压接工艺实现生坯致密化，提出低温烧结工艺，促进晶粒均匀生长的同时降低孔隙率。本发明可使氧化锌电阻片的电位梯度在原配方基础上实现±200V/mm可调，2ms方波通流密度在±20A/cm2之间可调，解决了现有技术中电位梯度/通流能力不足，电位梯度/通流能力等电气性能无法调控的难题。
Description
技术领域
本发明涉及电力材料技术领域，尤其涉及一种含锆多铋的高电位梯度大通流氧化锌电阻片。
背景技术
近年来，全球自然灾害频发，输电线路经常因遭受雷击而引发跳闸停电事故。随着电力建设的迅速发展，电网覆盖的区域越来越广，输电线路经常需要架设到一些地形复杂的山区，而这些区域往往同时存在冬季寒冷易覆冰、春夏季雷电多发的气候现象。在上述地理环境特殊的地区，当遭遇恶劣天气时，输电线路极易发生雷击引起的闪络跳闸停电事故，严重威胁大电网安全稳定运行，因此，亟需提升输电线路的防雷性能。
氧化锌避雷器作为输电线路防雷的重要装备之一，而氧化锌电阻片作为避雷器核心元件，其电气特性很大程度上影响线路的防雷性能（《DL-T 815-2016 交流输电线路用复合外套金属氧化物避雷器》）。随着电网的不断发展，对具有高电位梯度与大通流能力的氧化锌电阻片的需求逐步增加，同时要求氧化锌电阻的电气性能可调。
现有关于氧化锌的文献主要针对于提升氧化锌电阻片通流能力、或电位梯度、或残压比等某单一方面的电气性能，无法实现通流能力与电位梯度的综合调控，适用面受到严重的限制。
发明内容
为了解决现有技术中存在的问题，本发明的目的是提供一种含锆多铋的高电位梯度大通流氧化锌电阻片，解决相关技术中氧化锌电阻片的电位梯度/通流能力不足以及电气性能无法调控的难题。
为了实现本发明目的，本发明的技术方案如下：
第一方面，本发明提供一种含锆多铋的高电位梯度大通流氧化锌电阻片，在制备所述氧化锌电阻片时，向制备原料中添加ZrO2和Bi2O3，使ZrO2在原料中的摩尔百分比为0.1~2.0%，Bi2O3在原料中的摩尔百分比为0.8~1.5%。
进一步地，在制备所述氧化锌电阻片时，向制备原料中添加熔融剂，使熔融剂在原料中的摩尔百分比为0.5%，所述熔融剂为TiO2和Cu(NO3)2按质量比为1:1的混合物。
在本发明的一个具体实施方式中，作为示例性说明，所述氧化锌电阻片的原料配方为：
ZnO 91.4%~96.3%、Bi2O3 0.8~1.5%、Sb2O3 0.8%~1.5%、Co2O3 0.5%～1%、Cr2O30%~0.5%、MnO2 0.5%~0.7%、SiO2 0.5%~1.5%、Ni2O3 0.4%~0.6%、Al(NO3)3 0.05%~0.08%、B2O3 0.2%~0.4%、Ga2O3 0~0.825%，ZrO2 0.1~2.0%，熔融剂0.5%。所涉及的百分比为摩尔百分比。
在此原料配方的基础上制备的氧化锌电阻片，其电位梯度可达180-600V/mm，2ms方波通流密度在25-65A/cm2之间。
第二方面，本发明提供前述氧化锌电阻片的制备方法，所述制备方法具体包括如下步骤：
（1）研磨：将氧化锌电阻片的原料以1300-1700r/min的砂磨速度进行混合研磨，得到原料粉体；
（2）造粒：将原料粉体在140-170℃，离心泵转速为960r-1040/min的条件下离心造粒，获得粒径介于30-50μm之间的氧化锌粉体球；
（3）压接：采用双面压接形式制备氧化锌电阻生坯，压接前调节含水率为1.0-2.0%,压接压强为8-10Mpa，获得压接后的生坯密度为3.23-3.25g/cm3；
（4）烧结：将氧化锌电阻生坯，在1100-1125℃条件下进行低温烧结，烧结时间5-7h。
当ZrO2为0.1mol%，Bi2O3为0.8mol%时，采用上述制备方法，可使氧化锌电阻片的2ms方波通流能力达到45A/cm2，电位梯度达到390V/mm；当改变基础元素掺杂配方时，通过改变ZrO2与Bi2O3的含量，可以实现电位梯度±200V/mm可调，2ms方波通流密度±20A/cm2之间可调。
第三方面，本发明提供一种提高氧化锌电阻片电位梯度及通流能力的方法，通过调控氧化锌电阻片原料配方中ZrO2和Bi2O3的摩尔比分别为0.1~2.0%和0.8~1.5%，同时提高氧化锌电阻片的电位梯度及通流能力。
进一步地，以m表示掺杂的氧化锆ZrO2摩尔百分数，n表示在原配方以外掺杂的氧化铋Bi2O3摩尔百分数，对于预期的能量耐受能力E，以及电位梯度E1mA，确定氧化锌电阻片原料配方中的氧化锆ZrO2与氧化铋Bi2O3的摩尔百分数分别为：
更进一步地，通过向氧化锌电阻片原料配方中添加0.5mol%的熔融剂，熔融剂为TiO2和Cu(NO3)2按质量1：1的混合物，提高氧化锌电阻片的通流能力。
作为优选，所述氧化锌电阻片的原料配方为：
ZnO 91.4%~96.3%、Bi2O3 0.8~1.5%、Sb2O3 0.8%~1.5%、Co2O3 0.5%～1%、Cr2O30%~0.5%、MnO2 0.5%~0.7%、SiO2 0.5%~1.5%、Ni2O3 0.4%~0.6%、Al(NO3)3 0.05%~0.08%、B2O3 0.2%~0.4%、Ga2O3 0~0.825%，ZrO2 0~2.0%，熔融剂0.5%。
需要说明的是，所述氧化锌电阻片的原料配方并不局限于此，可在本领域常规的氧化锌电阻片配方的基础上采用本发明所述方法进行调控。当采用其他配方时，按照本发明所述前述方法，仍能在原有配方的基础上，实现电位梯度±200V/mm可调，2ms方波通流密度±20A/cm2可调。
更进一步地，本发明还通过高能砂磨与离心造粒工艺增强粉体均匀性；通过双面压接减小电阻片孔隙率，增大通流能力。
更进一步地，本发明通过在1100-1125℃条件下进行低温烧结，促进晶粒均匀生长的同时降低孔隙率，增大电阻片的通流能力。
本发明涉及到的原料或试剂均为普通市售产品，涉及到的操作如无特殊说明均为本领域常规操作。
在符合本领域常识的基础上，上述各优选条件，可以相互组合，得到具体实施方式。
本发明的有益效果在于：
本发明通过对氧化锌电阻片的原料配方进行改良，改变了ZrO2、Bi2O3以及熔融剂的占比，实现了对氧化锌压敏电阻电位梯度与通流密度的调控。进一步采用砂磨与离心造粒工艺促进氧化锌电阻原料粉体形貌均匀，采用双面压接工艺实现生坯致密化，提出低温烧结工艺，促进晶粒均匀生长的同时降低孔隙率。本发明可使氧化锌电阻片的电位梯度达到180-600V/mm，2ms方波通流密度在25-65A/cm2之间可调，解决了现有技术中电位梯度/通流能力不足以及电气性能无法调控的难题。
附图说明
此处的附图被并入说明书中并构成本说明书的一部分，示出了符合本发明的实施例，并与说明书一起用于解释本发明的原理。
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，对于本领域普通技术人员而言，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1为含锆多铋的高电位梯度大通流氧化锌电阻片的制备流程图。
图2为氧化锌粉体砂磨工艺原理；其中，A：ZnO材料，B：氧化锆球，C：搅拌臂。
图3为氧化锌粉体喷雾造粒工艺设备；其中，1：热风发生器，2：雾化器，3：浆料泵，4：浆料桶，5：排风机，6：过滤器，7：送风机，8：造粒塔，9：旋风分离器，10：接料桶。
具体实施方式
为了能够更清楚地理解本发明的上述目的、特征和优点，下面将对本发明的方案进行进一步描述。需要说明的是，在不冲突的情况下，本发明的实施例及实施例中的特征可以相互组合。
在下面的描述中阐述了很多具体细节以便于充分理解本发明，但本发明还可以采用其他不同于在此描述的方式来实施；显然，说明书中的实施例只是本发明的一部分实施例，而不是全部的实施例。
下面将结合实施例对本发明的优选实施方式进行详细说明。需要理解的是以下实施例的给出仅是为了起到说明的目的，并不是用于对本发明的范围进行限制。本领域的技术人员在不背离本发明的宗旨和精神的情况下，可以对本发明进行各种修改和替换。
下述实施例中所使用的实验方法如无特殊说明，均为常规方法。
下述实施例中所用的材料、试剂等，如无特殊说明，均可从商业途径得到。
实施例1
如图1所示的氧化锌电阻片制备流程，原有配方为：ZnO 91.4%~96.3%、Bi2O30.7%、Sb2O3 0.8%~1.5%、Co2O3 0.5%～1%、Cr2O3 0%~0.5%、MnO2 0.5%~0.7%、SiO2 0.5%~1.5%、Ni2O3 0.4%~0.6%、Al(NO3)3 0.05%~0.08%、B2O3 0.2%~0.4%、Ga2O30~0.825%，ZrO2 0%。以上百分数指摩尔百分数。
本发明在原有配方基础之上，增加了TiO2/Cu(NO3)2熔融剂0.5mol%，同时调整ZrO2与Bi2O3成分占比。其中电位梯度随ZrO2含量的上升呈线性增加，随Bi2O3的增加呈二次下降规律。其对应的影响规律如式1所示：
E1mA= 180 + 420m- 100n（V/mm）（1）
上式中，m表示掺杂的氧化锆ZrO2摩尔百分数，n表示在原配方以外掺杂的氧化锆ZrO2摩尔百分数。
当ZrO2含量占比小于0.5%时，ZrO2对通流能力影响很小，含量超过1.0mol%时，通流能力随线性下降。当Bi2O3在0.7-2.0mol%之间不断增加时，氧化锌电阻通流能力线性增加。其对应的影响规律如式2所示，其中E表示ZnO电阻的通流密度。
如图2所示的砂磨工艺，氧化锌粉体在砂磨机中以1300-1700r/min高速碰撞研磨，获得平均粒径小于1μm，粒径分散性小于10%的氧化锌粉末颗粒。
如图3所示的喷雾造粒工艺，喷雾造粒塔中同一水平面上温度相等，研磨后的氧化锌浆料在同一水平面上干燥，粉体粒径与颗粒形貌更加均匀，离心造粒温度为140-170℃，离心泵转速为960r-1040/min。获得氧化锌粉体球形形貌，粒径介于30-50μm之间。
压接时采用双向压接的方式，促使压接更加紧密。压接前调节含水率为1.0-2.0%；压接压强为8-10Mpa，获得压接后的生坯密度为3.23-3.25g/cm3。烧结时降低烧结温度至1100-1125℃，同时烧结时间延长至5-7h。
本发明通过调控氧化锌电阻片原料配方中ZrO2和Bi2O3的摩尔百分比分别为0.1-2mol%和0.8-1.5mol%，以及通过添加0.5mol%的熔融剂，使得所制备的含锆多铋的氧化锌电阻片相对于传统的氧化锌电阻片而言，可在提升氧化锌电阻片整体电气性能的同时，实现电位梯度180-600V/mm，2ms方波通流密度25-65A/cm2，4/10μs冲击电流7.7-9.2kA/cm2之间可调。
实施例2
原有配方：ZnO 91.4%~96.3%、Bi2O3 0.7%、Sb2O3 0.8%~1.5%、Co2O3 0.5%～1%、Cr2O3 0%~0.5%、MnO2 0.5%~0.7%、SiO2 0.5%~1.5%、Ga2O3 0~0.825% 、Al(NO3)3 0.05%~0.08%、B2O3 0.2%~0.4%。以上百分数指摩尔百分数，相对于实施例1的原有配方，取消了Ni2O3成分。
采用的生产制备工艺与实施例1相同。
在ZrO2和Bi2O3的摩尔百分比分别为0.1mol%和0.8mol%的情况下，实施例2烧结得到的氧化锌电阻片电位梯度为365V/mm，方波通流密度为35A/cm2。在制备工艺不变的情况下，通过调节ZrO2和Bi2O3元素配方，可以实现氧化锌电阻片电位梯度±200V/mm，通流密度±20A/cm2可调，即电位梯度165-565V/mm、通流能力15-55A/cm2可调。
以上所述仅是本发明的具体实施方式，使本领域技术人员能够理解或实现本发明。对这些实施例的多种修改对本领域的技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。因此，本发明将不会被限制于本文所述的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。
Claims (2)
1.一种氧化锌电阻片，其特征在于，在制备所述氧化锌电阻片时，向制备原料中添加ZrO2、Bi2O3和熔融剂，使ZrO2在原料中的摩尔百分比为0.1~2.0%，Bi2O3在原料中的摩尔百分比为0.8~1.5%，熔融剂在原料中的摩尔百分比为0.5%，所述熔融剂为TiO2和Cu(NO3)2按质量1：1的混合物；
所述氧化锌电阻片的制备方法包括如下步骤：
（1）研磨：将氧化锌电阻片的原料以1300-1700r/min的砂磨速度进行混合研磨，得到原料粉体；
（2）造粒：将原料粉体在140-170℃，离心泵转速为960r-1040/min的条件下离心造粒，获得粒径介于30-50μm之间的氧化锌粉体球；
（3）压接：采用双面压接形式制备氧化锌电阻生坯，压接前调节含水率为1.0-2.0%；压接压强为8-10Mpa，获得压接后的生坯密度为3.23-3.25g/cm3；
（4）烧结：将氧化锌电阻生坯，在1100-1125℃条件下进行低温烧结，烧结时间5-7h。
2.根据权利要求1所述的氧化锌电阻片，其特征在于，所述氧化锌电阻片的原料配方为：
ZnO 91.4%~96.3%、Bi2O3 0.8~1.5%、Sb2O3 0.8%~1.5%、Co2O3 0.5%～1%、Cr2O3 0%~0.5%、MnO2 0.5%~0.7%、SiO2 0.5%~1.5%、Ni2O3 0.4%~0.6%、Al(NO3)3 0.05%~0.08%、B2O30.2%~0.4%、Ga2O3 0~0.825%，ZrO2 0.1~2.0%，熔融剂0.5%。
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| JP2005145809A (ja) * | 2003-11-15 | 2005-06-09 | Atsushi Iga | 酸化亜鉛系焼結体と酸化亜鉛バリスタおよび積層型酸化亜鉛バリスタ． |
| CN101239819B (zh) * | 2007-09-14 | 2012-05-16 | 深圳顺络电子股份有限公司 | 片式多层氧化锌压敏电阻陶瓷粉料制备方法 |
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| CN102515740A (zh) * | 2011-11-29 | 2012-06-27 | 中国科学院过程工程研究所 | 一种高能型氧化锌压敏电阻材料及其制备方法 |
| CN102723157A (zh) * | 2012-06-14 | 2012-10-10 | 扬州发运电气有限公司 | 中压高能氧化锌电阻片的制造方法 |
| RU2514085C2 (ru) * | 2012-06-20 | 2014-04-27 | Закрытое акционерное общество "Научно-производственная фирма "Магнетон Варистор" | Керамический материал для варисторов на основе оксида цинка |
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| CN103646738B (zh) * | 2013-12-13 | 2016-08-24 | 中国西电电气股份有限公司 | 一种氧化锌电阻片侧面用高阻层的制备方法 |
| CN105110786B (zh) * | 2015-09-14 | 2016-09-28 | 国家电网公司 | 氧化锌电阻片及其制备方法 |
| CN105174936B (zh) * | 2015-09-14 | 2017-03-22 | 国家电网公司 | 一种高电位梯度和强通流能力的氧化锌电阻片生产工艺 |
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| CN108929108A (zh) * | 2018-07-30 | 2018-12-04 | 宜宾志源高压电器有限公司 | 一种测量避雷器用氧化锌电阻片的生产工艺 |
| CN111439996A (zh) * | 2019-01-17 | 2020-07-24 | 陕西华星电子集团有限公司 | 一种压敏电阻器陶瓷材料及其制备方法 |
| CN110078494B (zh) * | 2019-03-21 | 2022-10-04 | 全球能源互联网研究院有限公司 | 一种氧化锌电阻片及其制备方法 |
| CN111462970B (zh) * | 2020-04-08 | 2021-02-09 | 湖南省湘电试研技术有限公司 | 一种配网防雷环形氧化锌电阻片及其制备方法 |
| CN111508676B (zh) * | 2020-04-24 | 2021-08-24 | 国网湖南省电力有限公司 | 一种小尺寸配网环形氧化锌电阻片及其制备方法 |
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