CN112744816A - 用于碳化硅单晶生长的碳化硅粉体的制备方法 - Google Patents
用于碳化硅单晶生长的碳化硅粉体的制备方法 Download PDFInfo
- Publication number
- CN112744816A CN112744816A CN202110126924.6A CN202110126924A CN112744816A CN 112744816 A CN112744816 A CN 112744816A CN 202110126924 A CN202110126924 A CN 202110126924A CN 112744816 A CN112744816 A CN 112744816A
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- CN
- China
- Prior art keywords
- silicon carbide
- powder
- carbide powder
- crystal growth
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 239000013078 crystal Substances 0.000 title claims abstract description 48
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 40
- 239000000843 powder Substances 0.000 claims abstract description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 229910021431 alpha silicon carbide Inorganic materials 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 238000005087 graphitization Methods 0.000 abstract description 3
- 239000002994 raw material Substances 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202110126924.6A CN112744816B (zh) | 2021-01-29 | 2021-01-29 | 用于碳化硅单晶生长的碳化硅粉体的制备方法 |
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CN202110126924.6A CN112744816B (zh) | 2021-01-29 | 2021-01-29 | 用于碳化硅单晶生长的碳化硅粉体的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN112744816A true CN112744816A (zh) | 2021-05-04 |
CN112744816B CN112744816B (zh) | 2023-02-28 |
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CN202110126924.6A Active CN112744816B (zh) | 2021-01-29 | 2021-01-29 | 用于碳化硅单晶生长的碳化硅粉体的制备方法 |
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CN (1) | CN112744816B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117069115A (zh) * | 2023-10-18 | 2023-11-17 | 江苏博迁新材料股份有限公司 | 一种碳化硅掺杂硅粉的制备方法及锂电池硅碳复合负极材料 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011102205A (ja) * | 2009-11-10 | 2011-05-26 | Sumitomo Osaka Cement Co Ltd | α型炭化ケイ素粉体の粒径制御方法及び炭化ケイ素単結晶 |
CN110217796A (zh) * | 2019-06-04 | 2019-09-10 | 山东天岳先进材料科技有限公司 | 一种高纯碳化硅粉及其制备方法 |
CN112226815A (zh) * | 2020-11-16 | 2021-01-15 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | 用于pvt法生长碳化硅单晶的碳化硅粉料的预处理方法 |
-
2021
- 2021-01-29 CN CN202110126924.6A patent/CN112744816B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011102205A (ja) * | 2009-11-10 | 2011-05-26 | Sumitomo Osaka Cement Co Ltd | α型炭化ケイ素粉体の粒径制御方法及び炭化ケイ素単結晶 |
CN110217796A (zh) * | 2019-06-04 | 2019-09-10 | 山东天岳先进材料科技有限公司 | 一种高纯碳化硅粉及其制备方法 |
CN112226815A (zh) * | 2020-11-16 | 2021-01-15 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | 用于pvt法生长碳化硅单晶的碳化硅粉料的预处理方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117069115A (zh) * | 2023-10-18 | 2023-11-17 | 江苏博迁新材料股份有限公司 | 一种碳化硅掺杂硅粉的制备方法及锂电池硅碳复合负极材料 |
CN117069115B (zh) * | 2023-10-18 | 2023-12-26 | 江苏博迁新材料股份有限公司 | 一种碳化硅掺杂硅粉的制备方法及锂电池硅碳复合负极材料 |
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CN112744816B (zh) | 2023-02-28 |
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Effective date of registration: 20211119 Address after: 100176 935, floor 9, building 2, yard 38, Kechuang Fifth Street, Beijing Economic and Technological Development Zone, Daxing District, Beijing Applicant after: Beijing libaosheng Technology Co.,Ltd. Address before: Room 501, 5th floor, 3749 Erhuan East Road, Licheng District, Jinan City, Shandong Province Applicant before: XINCAN semiconductor technology (Shandong) Co.,Ltd. |
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Effective date of registration: 20240407 Address after: 101300 North Wenhuaying Village, Shunyi District, Beijing (No. 1, Shunchuang Second Road) Patentee after: Beijing Changlong Zhixin Semiconductor Co.,Ltd. Country or region after: China Address before: 100176 935, floor 9, building 2, yard 38, Kechuang Fifth Street, Beijing Economic and Technological Development Zone, Daxing District, Beijing Patentee before: Beijing libaosheng Technology Co.,Ltd. Country or region before: China |