CN112740492A - 半导体激光器、光发射组件、光线路终端及光网络单元 - Google Patents
半导体激光器、光发射组件、光线路终端及光网络单元 Download PDFInfo
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- CN112740492A CN112740492A CN201980061913.5A CN201980061913A CN112740492A CN 112740492 A CN112740492 A CN 112740492A CN 201980061913 A CN201980061913 A CN 201980061913A CN 112740492 A CN112740492 A CN 112740492A
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06226—Modulation at ultra-high frequencies
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/27—Arrangements for networking
- H04B10/272—Star-type networks or tree-type networks
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04J—MULTIPLEX COMMUNICATION
- H04J14/00—Optical multiplex systems
- H04J14/02—Wavelength-division multiplex systems
- H04J14/0227—Operation, administration, maintenance or provisioning [OAMP] of WDM networks, e.g. media access, routing or wavelength allocation
- H04J14/0241—Wavelength allocation for communications one-to-one, e.g. unicasting wavelengths
- H04J14/0242—Wavelength allocation for communications one-to-one, e.g. unicasting wavelengths in WDM-PON
- H04J14/0245—Wavelength allocation for communications one-to-one, e.g. unicasting wavelengths in WDM-PON for downstream transmission, e.g. optical line terminal [OLT] to ONU
- H04J14/0246—Wavelength allocation for communications one-to-one, e.g. unicasting wavelengths in WDM-PON for downstream transmission, e.g. optical line terminal [OLT] to ONU using one wavelength per ONU
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- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/163—Single longitudinal mode
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0287—Facet reflectivity
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06258—Controlling the frequency of the radiation with DFB-structure
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1039—Details on the cavity length
Abstract
本申请实施例提供一种半导体激光器、光发射组件、光线路终端及光网络单元,半导体激光器包括衬底和在衬底上依次形成的下波导层、下限制层、中心层、上限制层、光栅层、上波导层和电极层;滤波区内上限制层、中心层和下限制层构成滤波区的芯层;滤波区的光栅层包括倾斜光栅。本申请可减小调制啁啾,减小传输光脉冲的色散。
Description
PCT国内申请,说明书已公开。
Claims (22)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/CN2019/070483 WO2020140286A1 (zh) | 2019-01-04 | 2019-01-04 | 半导体激光器、光发射组件、光线路终端及光网络单元 |
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CN112740492A true CN112740492A (zh) | 2021-04-30 |
CN112740492B CN112740492B (zh) | 2023-04-04 |
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CN201980061913.5A Active CN112740492B (zh) | 2019-01-04 | 2019-01-04 | 半导体激光器、光发射组件、光线路终端及光网络单元 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20210296859A1 (zh) |
EP (1) | EP3869640B1 (zh) |
JP (1) | JP7206393B2 (zh) |
KR (1) | KR102495786B1 (zh) |
CN (1) | CN112740492B (zh) |
WO (1) | WO2020140286A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114094438A (zh) * | 2022-01-24 | 2022-02-25 | 日照市艾锐光电科技有限公司 | 一种双电极共调制发射激光器 |
CN116387976A (zh) * | 2023-06-05 | 2023-07-04 | 福建慧芯激光科技有限公司 | 一种具有内嵌式多阶光栅的边发射激光器的制备方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7458885B2 (ja) | 2020-01-28 | 2024-04-01 | 日本ルメンタム株式会社 | 半導体光増幅器集積レーザ |
CA3186204A1 (en) * | 2020-07-23 | 2022-01-27 | Sylvain Boudreau | Semiconductor lasers with improved frequency modulation response |
CN117203149A (zh) | 2021-04-30 | 2023-12-08 | 三菱电机楼宇解决方案株式会社 | 乘客输送机用移动扶手的引导辊更换辅具 |
CN113823993B (zh) * | 2021-11-23 | 2022-03-01 | 日照市艾锐光电科技有限公司 | 一种集成表面光栅有源滤波器的半导体激光器 |
Citations (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4873691A (en) * | 1987-07-31 | 1989-10-10 | Hitachi, Ltd. | Wavelength-tunable semiconductor laser |
JPH01273377A (ja) * | 1988-04-26 | 1989-11-01 | Furukawa Electric Co Ltd:The | 分布ブラッグ反射器レーザ素子 |
US5155736A (en) * | 1989-04-04 | 1992-10-13 | International Business Machines Corporation | Semiconductor laser element capable of changing emission wavelength, and method of driving the same |
JPH0677571A (ja) * | 1992-08-24 | 1994-03-18 | Nippon Telegr & Teleph Corp <Ntt> | 光導波路形フィルタ |
JPH09186408A (ja) * | 1996-01-04 | 1997-07-15 | Canon Inc | 分布反射型半導体レーザ |
JP2000124543A (ja) * | 1998-10-14 | 2000-04-28 | Nippon Telegr & Teleph Corp <Ntt> | 半導体モード同期レーザ |
US6122299A (en) * | 1997-12-31 | 2000-09-19 | Sdl, Inc. | Angled distributed reflector optical device with enhanced light confinement |
WO2004088802A1 (ja) * | 2003-03-31 | 2004-10-14 | Nippon Telegraph And Telephone Corporation | 光半導体素子および光半導体集積回路 |
CN101227061A (zh) * | 2007-12-28 | 2008-07-23 | 武汉光迅科技股份有限公司 | 可调谐半导体激光器的制作方法及可调谐半导体激光器 |
JP2011158907A (ja) * | 2011-02-03 | 2011-08-18 | Pgt Photonics Spa | チューナブル共鳴格子フィルタ |
CN102544265A (zh) * | 2012-01-20 | 2012-07-04 | 苏州大学 | 一种窄带陷波滤光输出的发光二极管及其制备方法 |
CN102742099A (zh) * | 2011-12-20 | 2012-10-17 | 华为技术有限公司 | 激光器、无源光网络系统、装置以及波长控制方法 |
US20130308662A1 (en) * | 2012-05-15 | 2013-11-21 | Finisar Corporation | Wavelength Tunable Laser |
US8718111B1 (en) * | 2011-05-27 | 2014-05-06 | Clemson University | Diode laser |
JP2014116352A (ja) * | 2012-12-06 | 2014-06-26 | Fujitsu Ltd | チャープ制御半導体レーザ |
CN103986063A (zh) * | 2014-05-15 | 2014-08-13 | 华中科技大学 | 一种基于带通滤波结构的单纵模半导体激光器 |
CN104917052A (zh) * | 2015-07-06 | 2015-09-16 | 中国科学院半导体研究所 | 变周期倾斜光栅激光器及制备方法 |
CN108233177A (zh) * | 2018-01-22 | 2018-06-29 | 华中科技大学 | 一种可调谐半导体激光器 |
CN108649426A (zh) * | 2018-04-24 | 2018-10-12 | 青岛海信宽带多媒体技术有限公司 | 一种激光器 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08162711A (ja) * | 1994-11-30 | 1996-06-21 | Fujikura Ltd | 半導体レーザ及び光学フィルタ |
US5901164A (en) * | 1997-05-30 | 1999-05-04 | Northern Telecom Limited | Direct amplitude modulation of lasers |
JP2001237494A (ja) | 2000-02-25 | 2001-08-31 | Mitsubishi Electric Corp | 半導体レーザ装置 |
US6806114B1 (en) * | 2001-11-07 | 2004-10-19 | Nova Crystals, Inc. | Broadly tunable distributed bragg reflector structure processing |
KR100519922B1 (ko) * | 2002-12-17 | 2005-10-10 | 한국전자통신연구원 | 다영역 자기모드 잠김 반도체 레이저 다이오드 |
KR100837404B1 (ko) * | 2006-10-18 | 2008-06-12 | 삼성전자주식회사 | 반도체 광전 소자 |
JP5287460B2 (ja) * | 2009-04-17 | 2013-09-11 | 富士通株式会社 | 半導体レーザ |
WO2013173797A1 (en) * | 2012-05-17 | 2013-11-21 | Finisar Corporation | Directly modulated laser for pon application |
US10063032B2 (en) * | 2016-03-06 | 2018-08-28 | Finisar Corporation | Distributed reflector laser |
EP3611810B1 (en) * | 2018-04-28 | 2021-06-02 | Guangdong Oppo Mobile Telecommunications Corp., Ltd. | Control system and control method for laser projector, laser projection assembly and terminal |
US11018475B2 (en) * | 2018-12-27 | 2021-05-25 | Electronics And Telecommunications Research Institute | High-output power quarter-wavelength shifted distributed feedback laser diode |
-
2019
- 2019-01-04 JP JP2021536188A patent/JP7206393B2/ja active Active
- 2019-01-04 KR KR1020217017795A patent/KR102495786B1/ko active IP Right Grant
- 2019-01-04 CN CN201980061913.5A patent/CN112740492B/zh active Active
- 2019-01-04 WO PCT/CN2019/070483 patent/WO2020140286A1/zh unknown
- 2019-01-04 EP EP19907942.7A patent/EP3869640B1/en active Active
-
2021
- 2021-05-28 US US17/333,289 patent/US20210296859A1/en active Pending
Patent Citations (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4873691A (en) * | 1987-07-31 | 1989-10-10 | Hitachi, Ltd. | Wavelength-tunable semiconductor laser |
JPH01273377A (ja) * | 1988-04-26 | 1989-11-01 | Furukawa Electric Co Ltd:The | 分布ブラッグ反射器レーザ素子 |
US5155736A (en) * | 1989-04-04 | 1992-10-13 | International Business Machines Corporation | Semiconductor laser element capable of changing emission wavelength, and method of driving the same |
JPH0677571A (ja) * | 1992-08-24 | 1994-03-18 | Nippon Telegr & Teleph Corp <Ntt> | 光導波路形フィルタ |
JPH09186408A (ja) * | 1996-01-04 | 1997-07-15 | Canon Inc | 分布反射型半導体レーザ |
US6122299A (en) * | 1997-12-31 | 2000-09-19 | Sdl, Inc. | Angled distributed reflector optical device with enhanced light confinement |
JP2000124543A (ja) * | 1998-10-14 | 2000-04-28 | Nippon Telegr & Teleph Corp <Ntt> | 半導体モード同期レーザ |
WO2004088802A1 (ja) * | 2003-03-31 | 2004-10-14 | Nippon Telegraph And Telephone Corporation | 光半導体素子および光半導体集積回路 |
CN101227061A (zh) * | 2007-12-28 | 2008-07-23 | 武汉光迅科技股份有限公司 | 可调谐半导体激光器的制作方法及可调谐半导体激光器 |
JP2011158907A (ja) * | 2011-02-03 | 2011-08-18 | Pgt Photonics Spa | チューナブル共鳴格子フィルタ |
US8718111B1 (en) * | 2011-05-27 | 2014-05-06 | Clemson University | Diode laser |
CN102742099A (zh) * | 2011-12-20 | 2012-10-17 | 华为技术有限公司 | 激光器、无源光网络系统、装置以及波长控制方法 |
CN102544265A (zh) * | 2012-01-20 | 2012-07-04 | 苏州大学 | 一种窄带陷波滤光输出的发光二极管及其制备方法 |
US20130308662A1 (en) * | 2012-05-15 | 2013-11-21 | Finisar Corporation | Wavelength Tunable Laser |
JP2014116352A (ja) * | 2012-12-06 | 2014-06-26 | Fujitsu Ltd | チャープ制御半導体レーザ |
CN103986063A (zh) * | 2014-05-15 | 2014-08-13 | 华中科技大学 | 一种基于带通滤波结构的单纵模半导体激光器 |
CN104917052A (zh) * | 2015-07-06 | 2015-09-16 | 中国科学院半导体研究所 | 变周期倾斜光栅激光器及制备方法 |
CN108233177A (zh) * | 2018-01-22 | 2018-06-29 | 华中科技大学 | 一种可调谐半导体激光器 |
CN108649426A (zh) * | 2018-04-24 | 2018-10-12 | 青岛海信宽带多媒体技术有限公司 | 一种激光器 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114094438A (zh) * | 2022-01-24 | 2022-02-25 | 日照市艾锐光电科技有限公司 | 一种双电极共调制发射激光器 |
CN114094438B (zh) * | 2022-01-24 | 2022-05-31 | 日照市艾锐光电科技有限公司 | 一种双电极共调制发射激光器 |
CN116387976A (zh) * | 2023-06-05 | 2023-07-04 | 福建慧芯激光科技有限公司 | 一种具有内嵌式多阶光栅的边发射激光器的制备方法 |
CN116387976B (zh) * | 2023-06-05 | 2023-12-29 | 福建慧芯激光科技有限公司 | 一种具有内嵌式多阶光栅的边发射激光器的制备方法 |
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KR20210087085A (ko) | 2021-07-09 |
CN112740492B (zh) | 2023-04-04 |
JP2022516019A (ja) | 2022-02-24 |
US20210296859A1 (en) | 2021-09-23 |
EP3869640A4 (en) | 2021-12-29 |
EP3869640A1 (en) | 2021-08-25 |
WO2020140286A1 (zh) | 2020-07-09 |
EP3869640B1 (en) | 2024-03-20 |
JP7206393B2 (ja) | 2023-01-17 |
KR102495786B1 (ko) | 2023-02-06 |
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