CN112703608A - Igzo薄膜晶体管、制备方法及显示面板 - Google Patents
Igzo薄膜晶体管、制备方法及显示面板 Download PDFInfo
- Publication number
- CN112703608A CN112703608A CN201880094123.2A CN201880094123A CN112703608A CN 112703608 A CN112703608 A CN 112703608A CN 201880094123 A CN201880094123 A CN 201880094123A CN 112703608 A CN112703608 A CN 112703608A
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- CN
- China
- Prior art keywords
- layer
- source
- igzo
- thin film
- film transistor
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Links
- 239000010409 thin film Substances 0.000 title claims abstract description 65
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 55
- 239000002184 metal Substances 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000005234 chemical deposition Methods 0.000 claims description 2
- 238000004070 electrodeposition Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
本申请公开一种IGZO薄膜晶体管，包括第一源漏极；金属层，包括一倾斜段，所述倾斜段与所述第一源漏极相接；绝缘层，形成于所述金属层及所述第一源漏极上，所述绝缘层上形成有开孔从而暴露出至少部分所述第一源漏极；及IGZO层，覆盖连接暴露于所述开孔内的所述第一源漏极。本申请还公开一种显示面板及一种IGZO薄膜晶体管的制备方法。本申请的IGZO薄膜晶体管的横向长度更小。
Description
PCT国内申请，说明书已公开。
Claims (20)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2018/099046 WO2020029037A1 (zh) | 2018-08-06 | 2018-08-06 | Igzo薄膜晶体管、制备方法及显示面板 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112703608A true CN112703608A (zh) | 2021-04-23 |
Family
ID=69413899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880094123.2A Pending CN112703608A (zh) | 2018-08-06 | 2018-08-06 | Igzo薄膜晶体管、制备方法及显示面板 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN112703608A (zh) |
| WO (1) | WO2020029037A1 (zh) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104022156A (zh) * | 2014-05-20 | 2014-09-03 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及相应的制作方法、显示装置 |
| US20150131020A1 (en) * | 2013-11-08 | 2015-05-14 | Innolux Corporation | Display panel and display apparatus including the same |
| KR20150073612A (ko) * | 2013-12-23 | 2015-07-01 | 엘지디스플레이 주식회사 | 박막 트랜지스터를 포함하는 어레이 기판 및 이의 제조 방법 |
| CN105425493A (zh) * | 2016-01-11 | 2016-03-23 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示面板 |
| CN107342328A (zh) * | 2017-07-19 | 2017-11-10 | 京东方科技集团股份有限公司 | 一种异形薄膜晶体管及其制作方法、阵列基板 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW518764B (en) * | 2001-04-04 | 2003-01-21 | Au Optronics Corp | Reflection type TFT-LCD with slant diffuser pixel electrode |
-
2018
- 2018-08-06 CN CN201880094123.2A patent/CN112703608A/zh active Pending
- 2018-08-06 WO PCT/CN2018/099046 patent/WO2020029037A1/zh active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150131020A1 (en) * | 2013-11-08 | 2015-05-14 | Innolux Corporation | Display panel and display apparatus including the same |
| KR20150073612A (ko) * | 2013-12-23 | 2015-07-01 | 엘지디스플레이 주식회사 | 박막 트랜지스터를 포함하는 어레이 기판 및 이의 제조 방법 |
| CN104022156A (zh) * | 2014-05-20 | 2014-09-03 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及相应的制作方法、显示装置 |
| CN105425493A (zh) * | 2016-01-11 | 2016-03-23 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示面板 |
| CN107342328A (zh) * | 2017-07-19 | 2017-11-10 | 京东方科技集团股份有限公司 | 一种异形薄膜晶体管及其制作方法、阵列基板 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020029037A1 (zh) | 2020-02-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20210423 |
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| WD01 | Invention patent application deemed withdrawn after publication |