CN112652577A - Semiconductor material cutting device - Google Patents
Semiconductor material cutting device Download PDFInfo
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- CN112652577A CN112652577A CN202011057408.4A CN202011057408A CN112652577A CN 112652577 A CN112652577 A CN 112652577A CN 202011057408 A CN202011057408 A CN 202011057408A CN 112652577 A CN112652577 A CN 112652577A
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- semiconductor package
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- unit picker
- pipe
- liquid
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 345
- 238000005520 cutting process Methods 0.000 title claims abstract description 85
- 239000000463 material Substances 0.000 title claims abstract description 73
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 69
- 239000007788 liquid Substances 0.000 claims description 174
- 238000001179 sorption measurement Methods 0.000 claims description 135
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 105
- 238000004140 cleaning Methods 0.000 claims description 58
- 238000001035 drying Methods 0.000 claims description 17
- 238000012546 transfer Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000004891 communication Methods 0.000 claims description 10
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- 238000002347 injection Methods 0.000 claims description 5
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- 230000001965 increasing effect Effects 0.000 description 13
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- 239000007921 spray Substances 0.000 description 5
- 238000007605 air drying Methods 0.000 description 4
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- 238000005507 spraying Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
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- 239000000356 contaminant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Abstract
The present invention relates to a semiconductor material cutting apparatus for cutting a semiconductor strip into individual semiconductor packages, and more particularly, to a semiconductor material cutting apparatus which can clean both the lower surface and the upper surface of a semiconductor package using an ultrasonic cleaning part and a cell picker without separate desoldering equipment.
Description
Technical Field
The present invention relates to a semiconductor material cutting device for cutting a semiconductor strip into individual semiconductor packages.
Background
A semiconductor material cutting apparatus is a device that cuts a packaged semiconductor strip (strip) into individual semiconductor packages.
In addition to the function of simply cutting the semiconductor tape, the semiconductor material cutting device provides a function of processing a series of processes of inspecting upper and lower surfaces of the cut semiconductor packages to classify the semiconductor packages generating the manufacturing defects after performing the cutting, cleaning and drying processes of the semiconductor tape, and as a patent for such a semiconductor material cutting device, one described in korean laid-open patent No. 10-2017 and 0026751 (hereinafter, referred to as "patent document 1") is known.
In the semiconductor material dicing apparatus of patent document 1 described above, after a semiconductor tape is diced into a plurality of individual semiconductor packages on a chuck table (chuck table) by a blade, a cleaning and drying process and a drying process are performed in a cleaning and drying section and a suction table.
However, in the cleaning of patent document 1, the cleaning process is performed by spraying a cleaning liquid or compressed air to the lower surface of the semiconductor package, but such a cleaning process has a problem that high cleaning quality (quality) of various kinds of semiconductor packages cannot be secured.
To explain in detail, it is difficult to remove white contamination (white contamination) generated due to high-speed sawing of the cutting portion, and in the case where foreign matter such as fine powder is embedded in the Ball (Ball) portion, it is difficult to remove the foreign matter only by the cleaning process of patent document 1.
In addition, in the case where the semiconductor package is small in size, there may be a problem in that interference is generated with an alignment state of the semiconductor package picked up by the unit picker in the case where the semiconductor package is physically contacted and cleaned with a brush (brush), sponge (sponge), or the like.
On the other hand, in a Ball Grid Array (BGA) type semiconductor tape, a flux (flux) is applied to attach balls to Ball lands (Ball lands) of a Printed Circuit Board (PCB) substrate and a reflow (reflow) process is performed after the balls are attached, and thereafter a defluxing (defluxing) process for removing the flux remaining on the PCB substrate is required, for which a separate defluxing apparatus is required in a semiconductor material cutting apparatus.
If such a desoldering apparatus is separately provided, there is a problem that a semiconductor material production process is delayed.
In addition, since the desoldering equipment is manufactured in a large size, it is difficult to achieve miniaturization of the semiconductor material cutting apparatus, and the desoldering equipment is expensive, so that the manufacturing cost of the semiconductor material cutting apparatus increases.
Therefore, there is a need to develop a semiconductor material cutting apparatus that can perform defluxing simultaneously with cleaning of a semiconductor package at the time of cleaning of the semiconductor material cutting apparatus even if there is no separate defluxing device.
[ Prior art documents ]
[ patent document ]
[ patent document 1]1) Korean patent No. 10-2017-
Disclosure of Invention
[ problems to be solved by the invention ]
The present invention has been made to solve the above problems, and an object of the present invention is to provide a semiconductor material dicing apparatus that can clean both the lower surface and the upper surface of a semiconductor package using an ultrasonic cleaning unit and a cell picker without a separate desoldering device.
[ means for solving problems ]
A semiconductor material cutting apparatus according to a feature of the present invention includes: a cutting part for cutting the semiconductor strip absorbed and supported by the upper surface of the chuck table into individual semiconductor packages; a unit picker including an adsorption pad, a pressure supply part and a first pipeline, wherein the adsorption pad is provided with an adsorption hole on the bottom surface to vacuum adsorb the cut spherical surface of the semiconductor package, the pressure supply part supplies negative pressure to the adsorption hole, the first pipeline transmits the negative pressure supplied by the pressure supply part and is communicated with the adsorption hole, and the unit picker picks up and transfers the semiconductor package adsorbed and supported by the upper surface of the chuck table; an ultrasonic cleaning unit including a water tank storing a liquid in which the semiconductor packages picked up by the unit pickers are immersed, and an ultrasonic generating unit generating ultrasonic waves into the water tank and performing ultrasonic cleaning after immersing the semiconductor packages picked up by the unit pickers in the water tank; an adsorption stage adsorbing the semiconductor package after the ultrasonic-cleaned semiconductor package is transferred by the unit picker; and a control unit that controls an intensity of a negative pressure applied to the adsorption hole through the first pipe when the semiconductor package picked up by the unit picker is immersed in the water tank, wherein the control unit reduces the intensity of the negative pressure to form a gap between the adsorption pad of the unit picker and the semiconductor package adsorbed by the adsorption pad, so that the liquid stored in the water tank can flow in through the adsorption hole of the adsorption pad of the unit picker, and increases the intensity of the negative pressure if the liquid flowing into the first pipe of the unit picker reaches a set amount.
According to another feature of the present invention, a semiconductor material cutting apparatus includes: a cutting part for cutting the semiconductor strip absorbed and supported by the upper surface of the chuck table into individual semiconductor packages; a unit picker including an adsorption pad, a pressure supply part, and a first pipe, a second pipe and a valve, the adsorption pad being provided with an adsorption hole on a bottom surface to vacuum-adsorb the cut spherical surface of the semiconductor package, the pressure supply part supplying a negative pressure to the adsorption hole, the first pipe transmitting the negative pressure supplied by the pressure supply part and communicating with the adsorption hole, one end of the second pipe communicating with the first pipe to allow external air to flow into the first pipe, the valve being connected to the other end of the second pipe to open and close the second pipe, the unit picker picking up and transferring the semiconductor package adsorbed and supported by the upper surface of the chuck table; an ultrasonic cleaning unit including a water tank storing a liquid in which the semiconductor packages picked up by the unit pickers are immersed, and an ultrasonic generating unit generating ultrasonic waves into the water tank and performing ultrasonic cleaning after immersing the semiconductor packages picked up by the unit pickers in the water tank; an adsorption stage adsorbing the semiconductor package after the ultrasonic-cleaned semiconductor package is transferred by the unit picker; and a control part for controlling the valve to be opened or closed or controlling the opening and closing amount, wherein the control part opens the valve before the unit picker transfers the semiconductor package to the adsorption table to remove the liquid remained in the first pipeline of the unit picker.
Here, the unit picker further includes: a second pipe having one end communicating with the first pipe to allow external air to flow into the first pipe; and a valve connected to the other end of the second pipe to open and close the second pipe, wherein the control part controls the strength of the negative pressure applied to the adsorption hole by adjusting whether the valve is opened or closed or adjusting the opening and closing amount.
Further, the control unit opens the valve to form a gap between the adsorption pad of the unit picker and the semiconductor package adsorbed by the adsorption pad when the semiconductor package picked up by the unit picker is immersed in the water bath, so that the liquid stored in the water bath can flow in through the adsorption hole of the adsorption pad of the unit picker, and closes the valve when the liquid flowing into the first pipe of the unit picker reaches a set amount.
In addition, the control part may open the valve to remove the liquid remaining in the first pipe of the unit picker before the unit picker transfers the semiconductor package to the adsorption stage.
The unit picker may be raised from the water tank when the ultrasonic cleaning is completed, and then the valve may be opened to remove the liquid remaining in the first pipe of the unit picker, and the unit picker may be moved to the adsorption stage in a state where the valve is closed after the remaining liquid is removed.
Further, the control part repeatedly performs opening and closing of the valve until the liquid stored in the water tank flows in through the adsorption hole of the adsorption pad of the unit picker, keeps the valve open if the liquid flows in through the adsorption hole, and makes the negative pressure transmitted to the semiconductor package through the first pipe have an adsorption force to such an extent that the semiconductor package does not fall off the unit picker by using external air flowing in when the valve is open.
In addition, the control part may open the valve before the semiconductor package is immersed in the water bath or in a state where the semiconductor package has been immersed in the water bath.
The valve is an atmospheric communication valve, and the pressure supply portion is a vacuum ejector (vacuum ejector).
In addition, the valve is a proportional valve, and the amount of outside air flowing in through the valve can be adjusted by controlling the opening and closing amount of the proportional valve.
In addition, the ultrasonic cleaning part may include: an upper drain port provided at one side of the inside of the water tub, for discharging floating foreign matters generated during cleaning; a lower water outlet disposed below the upper water outlet for discharging foreign matters precipitated during cleaning; and a liquid supply part formed at the other side of the inside of the water tank and supplying the liquid in one side direction.
In addition, the ultrasonic cleaning part may include a liquid supply part that supplies a liquid having a certain temperature into the water bath.
In addition, the ultrasonic cleaning part may be provided with a heating part at one side of the water bath to heat the liquid stored in the water bath to a specific temperature.
In addition, the present invention may further include: a foreign matter removing part provided at one side of the ultrasonic cleaning part to clean a lower surface of the semiconductor package before ultrasonic cleaning of the semiconductor package picked up by the unit picker; and an air injection part provided at one side of the ultrasonic cleaning part and injecting air for drying the semiconductor package subjected to the ultrasonic cleaning.
[ Effect of the invention ]
The semiconductor material dicing apparatus of the present invention as described above has the following effects.
Unlike the prior art, both the lower surface and the upper surface of the semiconductor package (P) can be cleaned without providing separate desoldering equipment and various cleaning equipment, thereby shortening the process time of the semiconductor material cutting device and achieving the miniaturization of the semiconductor material cutting device.
When the semiconductor package is cleaned by using the ultrasonic wave, foreign matters of the semiconductor package can be more effectively removed by performing at least one of the vertical movement of the unit pickup up and down and the horizontal movement of the unit pickup back and forth.
The liquid stored in the water tank is heated to a specific temperature by supplying the liquid having the specific temperature into the water tank or providing a heating part at one side of the water tank, so that the removal of the residual foreign materials of the semiconductor package and the desoldering can be more effectively performed at the time of the ultrasonic cleaning.
In this way, since the control unit repeatedly opens and closes the atmosphere communication valve, even when the suction pad is formed of a rubber material, a gap can be easily formed between the upper surface of the semiconductor package and the lower surface of the suction pad.
Since the control section repeats the opening of the atmospheric communication valve and the closing of the atmospheric communication valve, the liquid flows into the gap quickly while forming a minute gap between the semiconductor package and the adsorption pad, and the cleaning of the upper surface of the semiconductor package can be achieved more effectively.
In addition, in the present invention, since the residual liquid remaining in the unit picker can be completely removed when transferring the cut and cleaned semiconductor package to the suction table, the suction force is not reduced, and the semiconductor package and the contaminated liquid can be prevented from falling off when transferring the cleaned semiconductor package to the suction table, thereby preventing the possibility of recontamination of the cleaned semiconductor package in advance.
Drawings
Fig. 1 is a plan view of a semiconductor material cutting apparatus according to a preferred embodiment of the present invention.
Fig. 2 is a side sectional view of fig. 1.
Fig. 3 is a view showing a state when the unit picker of fig. 1 immerses the semiconductor package in a liquid of a water tank of the ultrasonic cleaning part.
Fig. 4 is a view showing a state in which the valve is opened in the state of fig. 3 so that liquid flows in through the gap and is sucked into the first pipe.
Fig. 5 is a view showing a state in which the valve is closed in the state of fig. 4 so that a large amount of liquid flows in through the gap and is sucked into the first pipe.
Fig. 6 is a view showing a state in which the unit picker is raised in the state of fig. 5, and the upper surface of the semiconductor package contacts the lower surface of the unit picker to remove the gap.
Fig. 7 is a view showing a state in which the valve is opened to discharge and remove the remaining liquid of the first pipeline in the state of fig. 6.
Fig. 8 is a schematic view of a method of cleaning and drying a semiconductor package using a semiconductor material cutting apparatus according to a preferred embodiment of the present invention.
[ description of symbols ]
10: semiconductor material cutting device
110: loading part
130: tape picker
150: chuck table
170: cutting part
200: unit picker
210: main body
230: adsorption pad
231: adsorption hole
233: first pipeline
235: second pipeline
237: valve with a valve body
400: ultrasonic cleaning part
410: water tank
430: ultrasonic wave generating part
510: foreign matter removing part
530: two-fluid nozzle
570: adsorption table
600: turntable picker
700: alignment part
710: rotary table
721: upper surface vision unit
722: lower surface vision unit
731: first sorting picker
732: second sorting picker
800: classification unit
810: good tray
820: waste tray
830: empty tray
850: tray picker
851: tray picker vision unit
910: first guide frame
920: second guide frame
930: third guide frame
940: fourth guide frame
950: fifth guide frame
960: sixth guide frame
P: semiconductor package
L: liquid, method for producing the same and use thereof
S: gap
S10: first picking up step
S20: foreign matter removal step
S30: lower surface cleaning step
S40: first upper surface cleaning step
S50: second upper surface cleaning step
S60: liquid removal step
S70: air drying step
S80: transfer step of adsorption table
X, Y: shaft
θ: direction of rotation
Detailed Description
The following merely illustrates the principles of the invention. Therefore, those skilled in the art can embody the principles of the invention and invent various devices included in the concept and scope of the invention even if they are not explicitly described or illustrated in the present specification. In addition, all terms and examples of the conditional parts listed in the present specification are to be understood as being used only for the purpose of clearly understanding the concept of the present invention and are not limited to the examples and states specifically listed above.
The objects, features and advantages described above will be further clarified by the following detailed description in connection with the accompanying drawings, so that a person having ordinary skill in the art to which the present invention pertains can easily carry out the technical idea of the present invention.
The embodiments described in this specification will be described with reference to a cross-sectional view and/or a perspective view, which are ideal illustrations of the present invention. Thus, embodiments of the present invention are not limited to the specific form shown, but also include variations in form produced by the manufacturing process.
Before the description, the following matters are defined.
The X-axis of fig. 1 indicates a direction in which the tape picker 130 and the unit picker 200 move horizontally. The positive direction of the X-axis is the rear of the semiconductor material cutting apparatus 10, and the negative direction of the X-axis is the front of the semiconductor material cutting apparatus 10.
The front of the semiconductor material cutting apparatus 10 is the opposite direction of the process performed in the semiconductor material cutting apparatus 10, and the rear of the semiconductor material cutting apparatus 10 is the direction of the process performed by the semiconductor material cutting apparatus 10. Therefore, the front-rear direction of the semiconductor material cutting apparatus 10 has the same meaning as the X-axis direction.
The Y-axis of fig. 1 represents the direction in which the turntable 710 moves horizontally.
Theta in fig. 1 represents the direction of rotation in the X-Y plane. Therefore, the θ direction represents a direction of rotation in the counterclockwise direction on the X-Y plane.
Hereinafter, a semiconductor material cutting apparatus 10 according to a preferred embodiment of the present invention will be described with reference to fig. 1 to 8.
Fig. 1 is a plan view of a semiconductor material cutting apparatus according to a preferred embodiment of the present invention, fig. 2 is a side sectional view of fig. 1, fig. 3 is a view showing a state when a semiconductor package is immersed in a liquid in a water tank of an ultrasonic cleaning part in the unit picker of fig. 1, fig. 4 is a view showing a state where a valve is opened in the state of fig. 3 to allow the liquid to flow in through a gap and be sucked into a first pipe, fig. 5 is a view showing a state where a valve is closed in the state of fig. 4 to allow a large amount of the liquid to flow in through a gap and be sucked into a first pipe, fig. 6 is a view showing a state where the unit picker is raised and an upper surface of the semiconductor package contacts a lower surface of the unit picker to remove the gap, fig. 7 is a view showing a state where the valve is opened to discharge and remove a remaining liquid of the first pipe in the state of fig. 6, and fig. 8 is a view showing a state where the semiconductor material cutting apparatus according to a preferred embodiment of the present invention is used to clean Schematic diagram of a method of packaging.
As shown in fig. 1 and 2, a semiconductor material cutting apparatus 10 according to a preferred embodiment of the present invention is a semiconductor material cutting apparatus 10 for cutting and processing a semiconductor strip into individual semiconductor packages P, including: a cutting part 170 cutting the semiconductor strip sucked and supported by the upper surface of the chuck table into individual semiconductor packages; a unit picker 200 including an adsorption pad having adsorption holes 231 on a bottom surface thereof to vacuum-adsorb a spherical surface (upper surface) of the cut semiconductor packages P, a pressure supply part (not shown) supplying a negative pressure to the adsorption holes 231, and a first pipe 233 communicating with the adsorption holes and transferring the semiconductor packages adsorbed and supported by the upper surface of the chuck table by the unit picker 200; an ultrasonic cleaning unit 400 including a water tank 410 and an ultrasonic generator, the water tank 410 storing a liquid L into which the semiconductor packages P picked up by the unit picker 200 are immersed, the ultrasonic generator generating ultrasonic waves into the water tank 410 and performing ultrasonic cleaning after immersing the semiconductor packages picked up by the unit picker into the water tank; an adsorption stage 570 adsorbing a lower surface of the semiconductor package P on an upper surface of the adsorption stage 570 after the semiconductor package P cleaned in the ultrasonic cleaning part 400 is transferred by the unit pickup 200; and a control part for controlling the intensity of the negative pressure applied to the adsorption holes through the first pipeline when the semiconductor package P picked up by the unit picker 200 is immersed in the water tank, wherein the control part reduces the intensity of the negative pressure to form a gap between the adsorption pad of the unit picker and the semiconductor package adsorbed by the adsorption pad, so that the liquid stored in the water tank can flow in through the adsorption holes of the adsorption pad of the unit picker, and increases the intensity of the negative pressure when the liquid flowing into the first pipeline of the unit picker reaches a set amount.
The main feature of the present invention is that the strength of the suction force (negative pressure) of the unit pickup is reduced in the ultrasonic cleaning unit, so that a gap is formed between the semiconductor package sucked by the suction pad of the unit pickup and the suction pad of the unit pickup, and a liquid in which ultrasonic waves are generated flows in through the gap, thereby performing ultrasonic cleaning of the spherical surface of the semiconductor package. In addition, when the liquid flowing into the first pipe of the unit picker through the gap reaches a set amount, the strength of the negative pressure is increased to increase the amount of the flowing liquid, thereby further enhancing the spherical surface cleaning force.
The intensity adjustment of the negative pressure at the time of ultrasonic cleaning may also be performed by adjusting the intensity of the negative pressure supplied through the pressure supply portion, but may also be achieved using an additional pipe including a switchable valve.
To this end, the unit picker of the present invention may further include a second pipe which communicates with the first pipe and allows external air to flow into the first pipe according to whether the valve is opened or closed. With this configuration, the negative pressure supplied from the pressure supply portion to the first pipe is kept fixed, and whether or not the external air flows in can be determined by whether the valve is open or closed, and the strength of the negative pressure supplied to the first pipe can be adjusted according to the inflow of the external air, so that the strength of the negative pressure can be controlled more conveniently. In addition, even if the volume and capacity of the pressure supply part are not increased, a separate valve and a second pipe may be used to form an air flow, so that the liquid remaining inside the unit picker may be discharged with a small capacity, and in case that the valve is provided adjacent to the position of the suction hole of the unit picker, there may be an advantage of a rapid response as compared to the pressure supply part located at the uppermost end of the unit picker.
Therefore, it is more preferable to further include a second pipe which communicates with the first pipe and allows the outside air to flow into the first pipe depending on whether the valve is opened or closed.
For reference, the control part of the present invention may also control the strength of the negative pressure applied to the adsorption hole by adjusting whether the valve is opened or closed.
More specifically, the control part opens the valve to form a gap between the semiconductor packages adsorbed by the adsorption pads of the unit picker when the semiconductor packages picked up by the unit picker are immersed in the water bath, so that the liquid stored in the water bath can flow in through the adsorption holes of the adsorption pads of the unit picker, and controls the closing valve if the liquid flowing into the first pipe of the unit picker reaches a set amount.
On the other hand, the ultrasonic cleaning part of the present invention may further include a separate cleaning part. For example, the method may further include: a foreign material removing part 510 provided at one side of the ultrasonic cleaning part, contacting a lower surface of the semiconductor package and removing the foreign material before ultrasonic cleaning of the semiconductor package picked up by the unit picker; and an air injection part provided at one side of the ultrasonic cleaning part and injecting air to a lower surface of the semiconductor package P in order to dry the semiconductor package which is subjected to the ultrasonic cleaning.
The air injection unit of the present invention may use an air nozzle for injecting air, or may use an air nozzle of a twin-fluid nozzle (twin-fluid nozzle) for independently controlling water and air.
In addition, in order to inspect the semiconductor package P sucked by the suction stage 570, the upper surface vision unit 721 inspects the upper surface of the semiconductor package P, and the semiconductor package P sucked by the unit picker 200 is cleaned in the ultrasonic wave generating part 430, the unit picker 200 is lowered to immerse the semiconductor package P in the liquid L, and then the ultrasonic wave generating part 430 is operated to clean the semiconductor package P with ultrasonic waves, and opens the valve 237 communicating with the first pipe 233 to reduce the negative pressure transferred to the adsorption hole 231 of the unit picker, so that the liquid L flows in through the gap S generated between the upper surface of the semiconductor package P adsorbed by the unit picker 200 and the lower surface of the unit picker 200 and is sucked into the first pipe 233, and thereafter, if the liquid flowing into the first pipe of the unit picker reaches a set amount, the valve 237 may be controlled to be closed to increase the negative pressure of the adsorption hole 231 of the unit picker.
On the other hand, in the case of the present invention, in the case of a material capable of generating a gap between the semiconductor package sucked by the suction pad of the unit pickup and the suction pad, it is not necessary to artificially form a gap between the suction pad of the unit pickup and the semiconductor package sucked by the suction pad. Therefore, in this case, since the liquid stored in the water tank flows into the first pipe of the unit pickup when the semiconductor package picked up by the unit pickup is immersed in the water tank, so that the cleaning effect of the upper surface (spherical surface) of the semiconductor package can be observed, it is not necessary to manually cause the control portion to control the intensity of the negative pressure applied to the suction hole through the first pipe.
Therefore, in the present invention, in the case of a material capable of generating a gap between the semiconductor package and the suction pad sucked by the suction pad of the unit pickup, a configuration of a valve and a second pipe may be used in order to remove the liquid flowing into the first pipe of the unit pickup and increase the suction force.
That is, the semiconductor material cutting apparatus of the present invention includes: a cutting part for cutting the semiconductor strip absorbed and supported by the upper surface of the chuck table into individual semiconductor packages; a unit picker including an adsorption pad, a pressure supply part, a first pipeline and a second pipeline, wherein the adsorption pad is provided with an adsorption hole on the bottom surface to vacuum adsorb the cut spherical surface of the semiconductor package, the pressure supply part supplies negative pressure to the adsorption hole, the first pipeline transmits the negative pressure supplied by the pressure supply part and is communicated with the adsorption hole, the second pipeline is communicated with the first pipeline, and external air flows into the first pipeline according to whether a valve is opened or closed, and the unit picker picks up and transfers the semiconductor package adsorbed and supported by the upper surface of the chuck table; an ultrasonic cleaning unit including a water tank storing a liquid in which the semiconductor packages picked up by the unit pickers are immersed, and an ultrasonic generating unit generating ultrasonic waves into the water tank and performing ultrasonic cleaning after immersing the semiconductor packages picked up by the unit pickers in the water tank; an adsorption stage adsorbing the semiconductor package after the ultrasonic-cleaned semiconductor package is transferred by the unit picker; and a control part for controlling the valve to be opened or closed, wherein the control part is equipped with the following modes: the valve may be opened before the unit picker transfers the semiconductor package to the adsorption stage to remove liquid remaining in the first line of the unit picker.
The semiconductor material dicing apparatus 10 according to the present invention will be described in more detail below with reference to fig. 1 and 2. First, when semiconductor tapes are supplied to the loading part 110 one at a time through an inlet rail (inlet rail), the tape picker 130 picks up the semiconductor tape supplied to the loading part 110 and transfers the semiconductor tape to the chuck table 150 in a state in which the spherical surface of the semiconductor tape is directed to the upper portion. The chuck table 150 receives the semiconductor tape picked up by the tape picker 130, moves to the cutting part 170 in a state of adsorbing a lower surface (molding surface) of the semiconductor tape, and cuts into individual semiconductor packages P in the cutting part 170.
The cutting part 170 functions to cut the semiconductor strip sucked by the chuck table 150 into a plurality of individual semiconductor packages P. Such a cutting section 170 may be a blade that cuts the semiconductor strip into individual semiconductor packages P on the chuck table 150 by rotating at a high speed, or may be a cutting tool such as a laser cutter that irradiates laser light on the chuck table 150 to cut the semiconductor strip into individual semiconductor packages P.
After the individual semiconductor packages P are cut in the cutting part 170, in order to remove foreign substances generated at the time of cutting, the foreign substances are moved to the foreign substance removing part 510, the ultrasonic cleaning part 400, and the two-fluid nozzle 530 in a state of being adsorbed by the unit pickup 200.
The unit picker 200 functions to pick up the upper surfaces of the plurality of cut semiconductor packages P on the chuck table 150, and is equipped to be lifted and moved in the front-rear direction.
In detail, the unit picker 200 functions as follows: the semiconductor packages cut by the cutting part 170 on the chuck table 150 are sucked, and the semiconductor packages P having been cleaned are transferred to the suction table 570 through the foreign material removing part 510, the ultrasonic cleaning part 400, and the two-fluid nozzle 530.
As shown in fig. 1 to 7, the unit picker 200 may include the following components: a body 210 connected to the first guide frame 910; an adsorption pad 230 provided at a lower portion of the main body 210; a plurality of adsorption holes 231 of the unit picker, provided at a lower surface of the adsorption pad 230 and adsorbing each of upper surfaces of the plurality of semiconductor packages P; a pressure supply unit (not shown) for generating negative pressure; a first pipe 233 transferring the negative pressure supplied from the pressure supply part and communicating with the adsorption hole 231 of the unit picker; a second pipe 235 communicating with the first pipe 233 and allowing external air (outside air) to flow into the first pipe 233 according to whether the valve 237 is open or closed; and a valve 237 provided in the second pipe 235, allowing external air to flow into the first pipe 233 through the second pipe 235 when opened, and blocking the inflow of external air into the first pipe 233 when closed.
The adsorption pad 230 may be provided on the main body 210 in an alternative manner.
The suction holes 231 of the unit picker are provided in plurality on the lower surface of the suction pad 230, i.e., the lower surface of the unit picker 200.
When the suction holes 231 of the unit picker suck and pick up the semiconductor packages P cut by the unit picker 200, the upper surfaces of the cut semiconductor packages P are brought into contact with the lower surfaces of the suction holes 231, thereby sucking the upper portions of the cut semiconductor packages P with a negative pressure. In this case, the negative pressure transferred to the adsorption hole 231 of the unit picker is generated in the pressure supply part and transferred through the first pipe 233.
The suction holes 231 of the unit picker are formed to correspond to the positions of the semiconductor packages P cut in the cutting part 170, as the suction holes of the chuck table provided at the chuck table 150, and the number of the suction holes 231 is formed to have the same number as that of the individual semiconductor packages P. Accordingly, each of the semiconductor packages placed on the chuck table 150 is adsorbed to each of the adsorption holes 231 of the unit picker 200, so that the unit picker 200 can easily adsorb the singulated semiconductor packages P.
The first pipe 233 functions to communicate the suction hole 231 of the unit picker with the pressure supply part. Therefore, when the pressure supply part operates to generate a negative pressure, the negative pressure is transmitted to the upper surface of the semiconductor package P through the first pipe 233 and the suction hole 231 of the unit picker, so that the suction of the semiconductor package P is easily achieved.
The second pipe 235 has one end connected to the valve 237 and the other end communicating with the first pipe 233. Such a second pipe 235 allows outside air to flow into the first pipe 233 depending on whether the valve 237 is open or closed. In the present invention, the outside air includes the atmosphere and compressed air, etc., and the valve may also be an atmosphere communication valve communicating with the atmosphere, and may also be a pump generating compressed air or a valve connected to an air tank.
In the case of using the atmosphere communication valve, the atmosphere can be flowed in when the valve is opened.
The valve of the present invention may be a proportional valve, and the amount of external air flowing in through the valve may also be adjusted by controlling the opening and closing amount of the proportional valve.
The valve 237 of the present invention is provided in the second pipe 235, and when the valve is opened, external air flows into the first pipe 233, thereby decreasing the strength of the negative pressure of the first pipe, and when closed, the inflow of external air into the first pipe 233 is blocked, thereby increasing the strength of the negative pressure applied to the adsorption hole through the first pipe.
For reference, in the present invention, the intensity of the negative pressure supplied to the first pipe through the pressure supply part is kept fixed, and the intensity of the negative pressure applied to the adsorption hole through the first pipe may be changed according to the opening and closing amount of the valve.
To explain in detail, when the valve 237 is opened, the external air flows into the inside of the second pipe 235 through the hole of the second pipe 235 and flows to the first pipe 233. In other words, as the valve 237 is opened, external air having atmospheric pressure flows into the first and second pipes 233 and 235 to communicate the atmosphere with the first and second pipes 233 and 235.
When the valve 237 is closed, the strength of the negative pressure applied to the adsorption hole is increased by blocking the inflow of the external air into the inside of the second pipe 235.
In the unit picker 200, the main body 210 of the unit picker 200 is disposed at the first guide frame 910, and the unit picker 200 moves along the first guide frame 910 so as to be movable in a front-rear direction, i.e., in an X-axis direction.
The unit picker 200 is provided to be movable up and down, and thus, it is possible to easily pick up the semiconductor package P sucked and supported on the upper surface of the chuck table, move the semiconductor package P to the ultrasonic cleaning unit, and transfer the semiconductor package P to the suction table.
The ultrasonic cleaning unit 400 functions as follows: the plurality of semiconductor packages P are cleaned by ultrasonic waves transmitted through the liquid L.
Such an ultrasonic cleaning part 400 may include the following components: a water tank 410 storing a liquid L for immersing the semiconductor packages P cut in the cutting part 170 by the unit picker 200; and an ultrasonic wave generator 430 for transmitting ultrasonic waves to the water tank 410 to clean the semiconductor package P immersed in the liquid L.
The ultrasonic cleaning part of the present invention is provided at one side of the inside of the water tank and may further include: an upper drain port for discharging floating foreign matters generated at the time of cleaning; a lower water discharge port provided at a lower portion of the upper water discharge port for discharging foreign matters precipitated during cleaning; and a liquid supply part formed at the other side of the inside of the water tank to supply the liquid in one side direction.
In this case, the liquid supply part may supply the liquid having a specific temperature into the water bath, and a heating part may be provided at one side of the water bath to heat the liquid stored in the water bath to the specific temperature.
For example, the specific temperature may be set to a temperature of 30 ° to 60 ° to facilitate the desoldering of the spherical surface.
On the other hand, the liquid L stored in the water tank of the ultrasonic cleaning section may be water, purified water, ultrapure water, a liquid to which a surfactant is added, or the like.
The upper drain port is preferably formed at a height similar to the height of the water surface of the liquid L stored in the water tank 410, and the lower drain port is preferably formed at a height slightly spaced from the bottom surface of the water tank 410.
A liquid supply portion for supplying the liquid L is provided on the other side of the inside of the water tank 410. The liquid supply part may include a plurality of supply nozzles, and the liquid L supplied through the liquid supply part is supplied from the other side inside the water tank 410 in one side direction to impart a unidirectional flow (flow velocity) to the liquid stored in the water tank.
The liquid supply unit is provided to supply the liquid L from the other side of the inside of the water tank 410 in one direction or to supply the liquid L and air at the same time, and is provided with a valve capable of adjusting the supply amount of the liquid L or the liquid L and air. Here, the valve may be adjusted manually or automatically.
For reference, the liquid supply may be adjusted as follows: floating foreign matters generated at the time of cleaning are overflowed together with the liquid L and discharged through the upper drain port, and the amount of the liquid L supplied through the liquid supply portion is made the same as or more than the amount of the liquid L discharged through the upper drain port and the lower drain port.
The ultrasonic wave generator 430 is disposed at a lower portion of the water tank 410, and functions to generate ultrasonic waves and transmit the ultrasonic waves to the liquid L stored in the water tank 410.
The liquid supply portion functions to supply the liquid L to the water tank 410.
In addition, the liquid supply part supplies the liquid L to the water tank 410 while sucking the liquid stored in the water tank 410 through the first pipe 233 in the ultrasonic cleaning process, thereby preventing the water level of the water tank 410 from being lowered.
The heating section functions to heat the liquid L supplied to the liquid supply section.
In this manner, the liquid L is heated by the heating part so that the liquid L supplied by the liquid supply part (not shown) has a high temperature, whereby the residual foreign substances and the residual flux of the semiconductor package P can be more effectively removed.
The adsorption stage 570 functions as follows: receives the plurality of semiconductor packages P picked up by the unit picker 200, which has completed cleaning and drying, and adsorbs lower surfaces of the plurality of semiconductor packages P. A heating unit (heater) for drying excess moisture remaining in the semiconductor package P adsorbed may be additionally provided in the adsorption stage 570.
The suction stage 570 is provided with stage suction holes (not shown) similar to the suction holes of the chuck stage 150, and the lower surface of each semiconductor package P can be easily sucked to the suction stage 570 through the stage suction holes.
The suction stage 570 may be provided with a heater, and when the lower surface of the semiconductor package P is sucked through the stage suction hole as described above, the heater may be operated by the control of the control part, and the plurality of semiconductor packages P may be easily dried by the heat of the heater. Of course, instead of the heater provided at the adsorption stage 570, a separate air nozzle may be provided at an upper portion of the adsorption stage 570 to spray air to the upper surface of the semiconductor package P to dry the semiconductor package P.
The adsorption stage 570 may be disposed at the fifth guide frame 950 and move along the fifth guide frame 950 so as to be movable in the X-axis direction, i.e., in the front-rear direction.
The foreign substance removing part 510 functions to remove the foreign substance on the lower surface of the semiconductor package P by being provided with a contact member for contacting the lower surface of the semiconductor package P adsorbed by the unit picker 200 to remove the foreign substance.
The contact member has a shape protruding upward.
Therefore, when the unit picker 200 passes over the upper portion of the foreign material removal part 510, the lower surfaces of the plurality of semiconductor packages P picked up by the unit picker 200 contact the foreign material removal part 510, so that the foreign material attached to the lower surfaces of the semiconductor packages P is easily removed. The foreign substance removal part 510 removes relatively large foreign substances, and by first removing the large foreign substances before performing ultrasonic cleaning, contamination of the water tank 410 of the ultrasonic cleaning part 400 can be relatively prevented.
The contact member of the foreign substance removing part 510 may be a brush, a sponge, or the like. If the size of the semiconductor package is very small, it may also cause the position of the semiconductor package to be skewed or leak (leak) to occur when the foreign matter is removed by the contact member, and thus the foreign matter removal portion may also be omitted and the ultrasonic cleaning may be performed by the ultrasonic cleaning portion.
The two-fluid nozzle 530 functions as follows: the semiconductor packages P adsorbed by the unit picker 200 are cleaned by spraying water and air to the lower surface of the semiconductor packages P adsorbed by the unit picker 200. It is also possible to spray water together with air through a two-fluid nozzle and to spray air after spraying water for drying.
A separate air nozzle may be additionally provided instead of the two-fluid nozzle to spray air to the lower surfaces of the plurality of semiconductor packages P to perform a function of drying the semiconductor packages P, and in this case, the air nozzle may be disposed between the two-fluid nozzle 530 and the adsorption stage 570.
The cutting unit 170, the ultrasonic cleaning unit 400, the foreign substance removal unit 510, the two-fluid nozzle 530, the air nozzle, and the suction table 570 may be arranged in the order of the cutting unit 170, the ultrasonic cleaning unit 400, the foreign substance removal unit 510, the two-fluid nozzle 530, the air nozzle, and the suction table 570 with reference to the front-rear direction of the semiconductor material cutting apparatus 10.
The structure is as follows: after cleaning and drying the semiconductor packages sucked by the suction stage 570 and performing the vision inspection by the upper surface vision unit 721, the semiconductor packages P are picked up by the turntable pickup 600 as shown in fig. 1, transferred to the alignment section 700, and then carried to the sorting section 800 after performing the vision inspection.
Hereinafter, a method of cleaning and drying the semiconductor package P using the semiconductor material cutting apparatus 10 having the above-described configuration will be described in detail with reference to fig. 1 to 8.
The method of cleaning and drying the semiconductor package P using the semiconductor material cutting apparatus 10 is realized by the control of the control section.
The method of cleaning and drying the semiconductor package P using the semiconductor material cutting apparatus 10 may include the steps of: a first pick-up step S10 of picking up the semiconductor package P on the chuck table 150 by the unit picker 200; a foreign substance removal step S20 of removing foreign substances on the lower surface of the semiconductor package P by physical contact of the foreign substance removal part 510; a lower surface cleaning step S30 of immersing the semiconductor package P in the liquid L by lowering the unit pickup 200 into the water tank 410, and ultrasonically cleaning the lower surface of the semiconductor package P by the ultrasonic waves generated by the ultrasonic wave generating unit 430; a first upper surface cleaning step S40 of opening the valve 237 communicating with the first pipe 233 to reduce the negative pressure transferred to the suction hole 231 of the unit picker, thereby creating a gap S between the upper surface of the semiconductor package P and the lower surface of the unit picker 200, and allowing the liquid L to be sucked into the first pipe 233 through the gap S, thereby cleaning the upper surface of the semiconductor package P; a second upper surface cleaning step S50 of, when the liquid flowing into the first pipe of the unit picker reaches a set amount, closing the valve 237 to increase the negative pressure of the adsorption hole 231 of the unit picker, thereby increasing the inflow amount of the liquid L flowing in through the gap S; a liquid removing step S60 of, after raising the unit pickup 200 from the water tank with the valve 237 closed, opening the atmosphere communication valve 237 so that the liquid L remaining in the first pipe 233 is removed through the first pipe 233; an air drying step S70 of moving the unit picker 200 to an upper portion of the air nozzle and spraying air to the semiconductor packages P completed with the ultrasonic cleaning to dry the semiconductor packages; and a suction stage transferring step S80, the unit picker 200 transfers the semiconductor package P to the suction stage 570.
In the first pick-up step S10, a process of picking up the semiconductor package P on the chuck table 150 by the unit picker 200 is performed.
First, when the semiconductor tape is cut into individual semiconductor packages P in the cutting section 170, the control section controls the unit picker 200 to move onto the chuck table 150, and then lowers the unit picker 200 onto the chuck table 150 to bring the upper surfaces of the cut semiconductor packages P into contact with the lower surfaces of the suction pads 230, and sucks the upper portions of the semiconductor packages P by negative pressure to pick up the same.
In the foreign substance removal step S20, a process of removing foreign substances of the lower surface of the semiconductor package P by physical contact of the foreign substance removal part 510 is performed.
After the first picking step S10 of sucking and picking up the semiconductor packages P in the cutting part 170, the control part may cause the unit picker 200 to remove foreign materials in the foreign material removing part 510 and move to the upper part of the ultrasonic cleaning part 400 to clean the semiconductor packages P sucked by the unit picker 200 in the ultrasonic cleaning part 400.
To explain in detail, the control part controls the unit picker 200 to move the unit picker 200 to an upper portion of the foreign substance removal part 510 so that the lower surfaces of the plurality of semiconductor packages P picked up by the unit picker 200 contact the foreign substance removal part 510, thereby removing large foreign substances attached to the lower surfaces of the semiconductor packages P first.
Thereafter, the unit pickup 200 is moved to an upper portion of the ultrasonic cleaning part 400, and an ultrasonic cleaning process is performed.
The ultrasonic cleaning process may include a lower surface cleaning step S30, a first upper surface cleaning step S40, a second upper surface cleaning step S50, and a liquid removing step S60.
The following process is performed in the lower surface cleaning step S30: the unit picker 200 is lowered into the water tank 410 to immerse the semiconductor package P in the liquid L, and the lower surface of the semiconductor package P is ultrasonically cleaned by the ultrasonic waves generated by the ultrasonic wave generating part 430.
In the ultrasonic cleaning process, the control part operates the ultrasonic wave generating part 430 to clean the semiconductor package P with the ultrasonic wave after the unit picker 200 is lowered and the semiconductor package P is immersed in the liquid L, as shown in fig. 3, in the ultrasonic cleaning process in which the semiconductor package P adsorbed by the unit picker 200 is cleaned in the ultrasonic wave generating part 430.
Since the ultrasonic wave is generated in the ultrasonic wave generating part 430, the ultrasonic wave is transmitted to the liquid L stored in the water tank 410, thereby cleaning the lower surface of the semiconductor package P by the ultrasonic wave through the liquid L and the ultrasonic wave.
In this case, the semiconductor package P is sucked by the suction hole 231 of the unit picker at a negative pressure, and the upper surface of the semiconductor package P is in close contact with the lower surface of the suction pad 230, i.e., the lower surface of the unit picker 200. Therefore, a gap is not generated between the semiconductor package P and the lower surface of the suction pad 230, i.e., the lower surface of the unit pickup 200.
For reference, since the value of the negative pressure in the present invention is a portion that can be changed according to the size, kind, and shape of the semiconductor package, detailed description thereof is omitted.
In the first upper surface cleaning step S40, by opening the valve in a state where the semiconductor package picked up by the unit pickup is immersed in the water bath, the suction force of the unit pickup sucking the semiconductor package is weakened, and a gap is formed between the suction pad of the unit pickup and the semiconductor package sucked by the suction pad. At this time, the opening and closing amount of the valve is set so that the negative pressure, which is transmitted to the semiconductor package through the first pipe by the external air flowing in when the valve is opened, has an adsorption force to such an extent that the semiconductor package does not fall from the unit picker.
In the first upper surface cleaning step S40, the valve is opened to form a gap between the adsorption pad and the semiconductor package adsorbed by the adsorption pad, so that liquid may flow in through the adsorption hole of the adsorption pad of the unit picker.
In the second upper surface cleaning step S50, the following process is performed: when the liquid flowing into the first pipe of the unit picker reaches a set amount, the valve 237 is closed to increase the negative pressure of the adsorption hole 231 of the unit picker, thereby increasing the strength of the adsorption force and increasing the inflow amount of the liquid L flowing in through the gap S.
The control part opens the valve 237 of the second pipe 235 communicating with the first pipe 233 to reduce the negative pressure transferred to the adsorption hole 231 of the unit picker, so that the liquid flows in through the gap S generated between the upper surface of the semiconductor package P adsorbed by the unit picker 200 and the lower surface of the unit picker 200 and is sucked into the first pipe 233.
To describe in detail, the control part controls and opens the valve 237, and thus, the external air flows into the first pipe 233 through the second pipe 235.
Since the external air has a pressure of atmospheric pressure, a negative pressure transmitted from the pressure supply part to the first pipe 233 and the adsorption hole 231 of the unit picker is reduced.
As described above, since the negative pressure is reduced, a portion of the area in the upper surface of the semiconductor package P is not in contact with the lower surface of the adsorption pad 230, i.e., the lower surface of the unit picker 200, as shown in fig. 4. That is, a part of the area in the suction pad does not contact the semiconductor package, and the remaining area maintains a state of contacting the semiconductor package. At this time, a gap S is generated between the lower surface of the adsorption pad 230, i.e., the lower surface of the unit pickup 200 and the upper surface of the semiconductor package P due to a partial region where contact is not made, and liquid flows in through the gap.
However, in this case, since the remaining region of the upper surface of the semiconductor package P is in contact with the lower surface of the suction pad 230, i.e., the lower surface of the unit picker 200, the entire semiconductor package P is not in a state of being spaced apart from the lower surface of the suction pad 230, i.e., the lower surface of the unit picker 200.
Since the valve 237 is opened, the external air flows into the first pipe 233 and the negative pressure is reduced, but the negative pressure can be continuously transmitted through the first pipe 233 and the adsorption hole 231 of the unit picker, and thus the liquid L of the water tank 410 is sucked into the first pipe 233 through the adsorption hole 231 of the unit picker and flows into the first pipe 233.
As described above, since the liquid L is sucked along the first pipe 233, the liquid L flows on the upper surface of the semiconductor package P, thereby cleaning the upper surface of the semiconductor package P. In the case where the semiconductor package P is of the BGA type, the balls formed on the upper surface of the semiconductor package P are also cleaned.
Of course, since the lower surface of the semiconductor package immersed in the liquid is also cleaned during the cleaning of the upper surface of the semiconductor package, the foregoing is divided into the lower surface cleaning step and the upper surface cleaning step, but not limited thereto, and since there is an effect of cleaning the lower surface of the semiconductor package also when the upper surface cleaning step is performed, the upper surface cleaning step of the present invention includes the lower surface cleaning step.
When the liquid L is sucked into the first pipe 233, the liquid L flows along the inner wall of the first pipe 233, and a vacuum flow caused by a negative pressure is generated in the central region of the first pipe 233. Therefore, even if the liquid L is sucked into the first pipe 233, the negative pressure can be continuously transmitted through the first pipe 233 and the suction hole 231 of the unit picker.
When the liquid L flows into the first pipe 233 to clean the upper surface of the semiconductor package P, and when the liquid flowing into the first pipe of the unit picker reaches a set amount, the control part closes the valve 237 to increase the negative pressure of the adsorption hole 231 of the unit picker, thereby increasing the inflow amount and flow rate of the liquid L flowing in through the gap S.
At this time, whether the liquid flowing into the first pipe reaches the set amount may be confirmed by a flow sensing sensor or a pressure sensor, may be judged according to the lapse of a certain time, and may be judged to reach the set amount by data obtained by repeated experiments.
To describe in detail, the control unit controls and closes the valve 237, thereby blocking the inflow of the outside air into the second duct 235. Therefore, the negative pressure inside the first pipe 233 increases again. In this case, the negative pressure transmitted from the pressure supply portion to the first pipe 233 and the suction hole 231 of the unit picker is increased as compared to when the external air flows through the second pipe 235. Even if the valve 237 is closed, the negative pressure transmitted to the first pipe 233 and the suction hole 231 of the unit picker is reduced as compared with the state of fig. 3, because the liquid L still flows into the first pipe 233.
In the case where the liquid is flowed in through the gap formed in the unit pickup in the water tank, the liquid is continuously flowed in through the gap, and therefore, if the valve is closed to increase the intensity of the negative pressure, the inflow amount and flow rate of the liquid are increased through the gap and the liquid inflow state is maintained.
As shown in fig. 5, as the negative pressure increases, the flow rate of the liquid L flowing in through the gap S between the upper surface of the semiconductor package P and the lower surface of the adsorption pad 230, i.e., the lower surface of the unit pickup 200, becomes faster, and the inflow amount of the liquid L flowing in through the gap S increases. In this case, the inflow amount is an inflow amount per unit time.
In this case, since the liquid L continuously flows into the suction holes 231 of the unit pickup and the first pipe 233 through the gap S, the upper surface of the semiconductor package P is not in contact with the lower surface of the suction pad 230, that is, the lower surface of the unit pickup 200 at all.
On the other hand, depending on the kind of semiconductor package, the liquid may be caused to flow in by opening the valve only once, but this may not be the case. Therefore, a process of repeating the opening and closing of the valve 237 until the liquid flows in may also be performed.
At this time, when the liquid flows in through the adsorption hole, the holding valve is opened, and when the liquid flowing into the first pipe reaches a set amount, the valve is closed to increase the flow rate and inflow amount of the liquid, thereby increasing the upper surface cleaning force.
The control portion can adjust the inflow amount of the liquid L flowing in through the gap S by repeatedly performing the opening of the valve 237 and the closing of the valve 237.
When the decrease and increase of the negative pressure transmitted to the inside of the first pipe 233 are repeated, a gap S may be formed between the upper surface of the semiconductor package P and the lower surface of the adsorption pad 230.
In this manner, since the control section repeats the opening of the valve 237 and the closing of the valve 237, even when the suction pad 230 is formed of a rubber material, the upper surface of the semiconductor package P is easily spaced apart from the lower surface of the suction pad 230 to generate the gap S.
In other words, forming the gap S between the upper surface of the semiconductor package P and the lower surface of the adsorption pad 230 can be more easily achieved.
Further, since the control section repeats the opening of the valve 237 and the closing of the valve 237, the suction force to the semiconductor package P can be changed, and thus the sucked semiconductor package moves slightly in the vertical direction and forms the gap S. In addition, the inflow amount of the liquid L passing through the gap S is changed, whereby the upper surface of the semiconductor package P can be more effectively cleaned.
Such repeated execution of the opening and closing of the valve 237 by the control portion may be realized over 2 to 6 times.
On the other hand, in the present invention, the valve uses a proportional valve, and the amount of outside air flowing in through the valve can be easily adjusted by controlling the opening and closing amount of the proportional valve.
When the ultrasonic cleaning is completed, a process of raising the unit picker 200 from the water tank in a state where the valve 237 is closed is performed.
When the cleaning of the lower surface of the semiconductor package P and the upper surface of the semiconductor package P is completed, the control part raises the unit picker 200 as shown in fig. 6. In this case, the valve 237 is in a closed state.
When the unit picker 200 is raised from the water tank, the liquid L is not sucked when the suction hole 231 of the unit picker is located at a position higher than the water level of the liquid L of the water tank 410. Accordingly, the negative pressure is increased again, and thus the upper surface of the semiconductor package P is brought into contact with the lower surface of the adsorption pad 230, i.e., the lower surface of the unit pickup 200, and the gap S disappears.
The liquid removing step S60 is performed to remove the liquid remaining in the first line of the unit picker. In the liquid removing step S60, a process of opening the valve 237 to remove the liquid L remaining in the first pipe 233 through the first pipe 233 is performed.
As shown in fig. 7, in a state after the unit picker 200 is raised, the control part opens the valve so that the liquid L remaining in the first pipe 233 is removed through the first pipe 233.
To explain in detail, in a state after the ultrasonic cleaning is completed and the unit picker 200 is raised, the liquid L remains inside the first pipe 233. In this state, when the control portion opens the valve 237 (preferably, an atmospheric communication valve), the external air flows into the first pipe 233 through the second pipe 235. Since the external air has a pressure of atmospheric pressure, the negative pressure transmitted from the pressure supply part to the first pipe 233 and the suction hole 231 of the unit picker is reduced.
When the outside air flows into the first pipe 233 from the second pipe 235, the outside air has a pressure of atmospheric pressure, and therefore, a vacuum flow is generated in the second pipe 235 in the direction of the pressure supply portion, and the liquid L remaining in the first pipe 233 moves upward along the first pipe 233 along the vacuum flow and is removed.
For this, the pressure supply part of the present invention may use a vacuum ejector.
The vacuum ejector may include an inflow port into which compressed air or the like flows and a discharge port from which the compressed air and the liquid L are discharged. In such a vacuum ejector, compressed air flows in through the inflow port and is discharged through the discharge port, so that a negative pressure is generated by a pressure difference, and such a negative pressure can be transmitted to the first pipe 233.
As described above, in the liquid removing step S60, the liquid L flowing in the first pipe 233 may be removed by being discharged by flowing to the outflow port.
By discharging and removing all the liquid L remaining in the first pipe 233 under the control of the controller, the liquid L remaining in the first pipe 233 can be prevented from flowing to the adsorption stage 570 in advance when the semiconductor package P adsorbed by the unit pickup 200 is unloaded to the adsorption stage 570.
The liquid remaining inside the first pipe of the unit picker may contain a part of contaminants when the spherical surface of the semiconductor package is cleaned. Therefore, if the liquid remaining in the first pipe is not removed when the unit picker transfers the semiconductor package to the suction table, the semiconductor package and the liquid remaining in the first pipe may be discharged to the upper portion of the suction table.
When a semiconductor package is transferred to an adsorption stage, there is a problem that the semiconductor package may be secondarily contaminated if a contaminated liquid is discharged, and in the case of an adsorption stage including a heating member, the heating temperature of the adsorption stage may be lowered, thereby deteriorating the drying performance.
In addition, when the semiconductor package P is dried by the adsorption stage 570, the drying can be prevented from being hindered by the liquid L.
Therefore, after all the remaining liquid L inside the first pipe 233 is discharged and removed, the control portion closes the atmosphere communication valve 237 again to increase the negative pressure. The discharge of the remaining liquid is preferably performed before the semiconductor package is transferred to the adsorption stage, and more preferably performed at the point when the ultrasonic cleaning is completed and the unit pickup is raised from the water tank.
In the air drying step S70, the following process is performed: the unit picker 200 is moved to the upper portion of the air nozzle, which sprays air to the semiconductor packages, which have been subjected to the ultrasonic cleaning, to dry the semiconductor packages P.
In a state where the semiconductor package P is completely adsorbed to the unit picker 200 by increasing the negative pressure by closing the valve 237, the control part controls the unit picker 200 and moves it to the upper portion of the air nozzle, and then dries the lower surface of the semiconductor package P by the air injection of the air nozzle.
In the suction stage transferring step S80, a step of transferring the semiconductor package P to the suction stage 570 for the unit picker 200. The semiconductor package transferred to the adsorption stage 570 may be heated with a separate heating member mounted, and the remaining liquid may be completely dried.
After performing the air drying step S70, the control part controls the unit picker 200 and moves it to the upper portion of the suction table 570, and then lowers the unit picker 200 to release the negative pressure of the pressure supply part, thereby transferring the semiconductor package P to the suction table 570.
Thereafter, the control part may operate the heating part of the adsorption stage 570 to further dry the semiconductor package P adsorbed to the stage adsorption hole of the adsorption stage 570.
In the above-described steps, in the state of the lower surface cleaning step S30 and the liquid removing step S60, that is, the state of fig. 3, 6, and 7, the upper surface of the semiconductor package P is in close contact with the lower surface of the cell picker 200, that is, the lower surface of the adsorption pad 230, and thus there is no gap between the upper surface of the semiconductor package P and the lower surface of the cell picker 200, that is, the lower surface of the adsorption pad 230.
In the states of the first and second upper surface cleaning steps S40 and S50, i.e., the states of fig. 4 and 5, a partial region of the upper surface of the semiconductor package P is not in close contact with the lower surface of the cell picker 200, i.e., the lower surface of the suction pad 230, and thus a gap S exists between the upper surface of the semiconductor package P and the lower surface of the cell picker 200, i.e., the lower surface of the suction pad 230.
The semiconductor material cutting apparatus 10 of the present invention adjusts the negative pressure of the unit picker 200 to generate the gap S between the semiconductor package P sucked by the suction hole 231 of the unit picker and the lower surface of the unit picker 200, so that the liquid L can be sucked into the first pipe 233, whereby the lower surface of the semiconductor package P and the upper surface of the semiconductor package P can be cleaned at the same time.
Therefore, unlike the prior art, the spherical surface of the semiconductor package P can be cleaned to remove the flux remaining on the upper surface of the semiconductor package without providing a separate defluxing device, thereby shortening the process time of the semiconductor material sawing device 10 and achieving miniaturization of the semiconductor material sawing device 10.
During the immersion of the semiconductor package P into the liquid L stored in the water tank 410 and the cleaning with the ultrasonic wave, the control section may control as follows: the operation of raising the unit picker 200 and lowering the unit picker 200 is repeated so that the semiconductor package P is raised and lowered while being immersed in the liquid L.
In addition, during the immersion of the semiconductor package P into the liquid L stored in the water tank 410 and the cleaning with the ultrasonic wave, the control section may control as follows: the unit picker 200 is repeatedly moved in the X-axis direction, i.e., moved forward and backward, so that the semiconductor package P is moved in the horizontal direction while being immersed in the liquid L.
As described above, the control unit controls the unit picker 200 to perform at least any one of the up-and-down vertical movement and the front-and-back horizontal movement, so that the foreign substances of the semiconductor package P can be more effectively removed when the semiconductor package P is cleaned with the ultrasonic waves.
As described above, although the present invention has been described with reference to the preferred embodiments thereof, those skilled in the relevant art can make various modifications and variations of the present invention without departing from the spirit and scope of the invention as set forth in the following claims.
Claims (14)
1. A semiconductor material cutting apparatus, comprising:
a cutting part for cutting the semiconductor strip absorbed and supported by the upper surface of the chuck table into individual semiconductor packages;
a unit picker including an adsorption pad, a pressure supply part, and a first pipeline, wherein the adsorption pad is provided with adsorption holes on a bottom surface to vacuum adsorb the cut spherical surface of the semiconductor package, the pressure supply part supplies negative pressure to the adsorption holes, the first pipeline transfers the negative pressure supplied by the pressure supply part and communicates with the adsorption holes, and the unit picker picks up and transfers the semiconductor package adsorbed and supported by the upper surface of the chuck table;
an ultrasonic cleaning unit including a water tank storing a liquid in which the semiconductor package picked up by the unit picker is immersed, and an ultrasonic generating unit generating ultrasonic waves into the water tank and performing ultrasonic cleaning after immersing the semiconductor package picked up by the unit picker in the water tank;
an adsorption stage adsorbing the semiconductor package after the ultrasonic-cleaned semiconductor package is transferred by the unit picker; and
a control unit for controlling the intensity of the negative pressure applied to the suction hole through the first pipeline when the semiconductor package picked up by the unit picker is immersed in the water tank,
the control part reduces the intensity of the negative pressure to form a gap between the adsorption pad of the unit picker and the semiconductor package adsorbed by the adsorption pad, so that the liquid stored in the water tank can flow in through the adsorption hole of the adsorption pad of the unit picker, and increases the intensity of the negative pressure if the liquid flowing into the first pipeline of the unit picker reaches a set amount.
2. The semiconductor material cutting apparatus according to claim 1,
the unit picker further includes: a second pipe having one end communicating with the first pipe to allow external air to flow into the first pipe;
a valve connected to the other end of the second line to open and close the second line,
the control part controls the strength of the negative pressure applied to the adsorption hole by adjusting whether the valve is opened or closed or adjusting the opening and closing amount.
3. The semiconductor material cutting apparatus according to claim 2,
the control part opens the valve to remove the liquid remaining in the first pipe of the unit picker before the unit picker transfers the semiconductor package to the adsorption stage.
4. A semiconductor material cutting apparatus, comprising:
a cutting part for cutting the semiconductor strip absorbed and supported by the upper surface of the chuck table into individual semiconductor packages;
a unit picker including an adsorption pad, a pressure supply part, and a first pipe, a second pipe and a valve, the adsorption pad being provided with an adsorption hole on a bottom surface to vacuum-adsorb the cut spherical surface of the semiconductor package, the pressure supply part supplying a negative pressure to the adsorption hole, the first pipe transmitting the negative pressure supplied by the pressure supply part and communicating with the adsorption hole, one end of the second pipe communicating with the first pipe to allow external air to flow into the first pipe, the valve being connected to the other end of the second pipe to open and close the second pipe, the unit picker picking up and transferring the semiconductor package adsorbed and supported by the upper surface of the chuck table;
an ultrasonic cleaning unit including a water tank storing a liquid in which the semiconductor package picked up by the unit picker is immersed, and an ultrasonic generating unit generating ultrasonic waves into the water tank and performing ultrasonic cleaning after immersing the semiconductor package picked up by the unit picker in the water tank;
an adsorption stage adsorbing the semiconductor package after the ultrasonic-cleaned semiconductor package is transferred by the unit picker; and
a control part for controlling the valve to be opened or closed or controlling the opening and closing amount,
the control part opens the valve to remove the liquid remaining in the first pipe of the unit picker before the unit picker transfers the semiconductor package to the adsorption stage.
5. The semiconductor material cutting apparatus according to claim 2 or 4,
the control unit opens the valve to form a gap between the adsorption pad of the unit picker and the semiconductor package adsorbed by the adsorption pad when the semiconductor package picked up by the unit picker is immersed in the water tank, so that the liquid stored in the water tank can flow in through the adsorption hole of the adsorption pad of the unit picker, and closes the valve when the liquid flowing into the first pipe of the unit picker reaches a set amount.
6. The semiconductor material cutting apparatus according to claim 2 or 4,
the unit picker is raised from the water tank when ultrasonic cleaning is completed, and then the valve is opened to remove the liquid remaining in the first pipe of the unit picker, and the unit picker is moved to the adsorption stage in a state where the valve is closed after the remaining liquid is removed.
7. The semiconductor material cutting apparatus according to claim 5,
the control part repeatedly performs opening and closing of the valve until the liquid stored in the water tank flows in through the adsorption holes of the adsorption pad of the unit picker, and keeps the valve open if the liquid flows in through the adsorption holes,
the negative pressure transmitted to the semiconductor package through the first pipe has an adsorption force to such an extent that the semiconductor package does not fall off the unit picker using the external air flowing in when the valve is opened.
8. The semiconductor material cutting apparatus according to claim 2 or 4,
the control part opens the valve before the semiconductor package is immersed in the water tank or in a state where the semiconductor package has been immersed in the water tank.
9. The semiconductor material cutting apparatus according to claim 2 or 4,
the valve is an atmospheric communication valve,
the pressure supply part is a vacuum ejector.
10. The semiconductor material cutting apparatus according to claim 2 or 4,
the valve is a proportional valve and is provided with a valve,
the amount of the outside air flowing in through the valve is adjusted by controlling the opening and closing amount of the proportional valve.
11. The semiconductor material cutting apparatus according to claim 1 or 4,
the ultrasonic cleaning section includes:
an upper drain port provided at one side of the inside of the water tub, for discharging floating foreign matters generated during cleaning;
a lower water outlet disposed below the upper water outlet for discharging foreign matters precipitated during cleaning; and
and a liquid supply part formed at the other side of the inside of the water tank and supplying the liquid in one side direction.
12. The semiconductor material cutting apparatus according to claim 1 or 4,
the ultrasonic cleaning portion includes a liquid supply portion that supplies the liquid having a specific temperature into the water tank.
13. The semiconductor material cutting apparatus according to claim 1 or 4,
the ultrasonic cleaning part is provided with a heating part at one side of the water tank to heat the liquid stored in the water tank to a specific temperature.
14. The semiconductor material cutting apparatus according to claim 1 or 4, characterized by further comprising:
a foreign material removing part provided at one side of the ultrasonic cleaning part to clean a lower surface of the semiconductor package before ultrasonic cleaning of the semiconductor package picked up by the unit picker; and
and an air injection part provided at one side of the ultrasonic cleaning part and injecting air for drying the semiconductor package subjected to the ultrasonic cleaning.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2019-0125607 | 2019-10-10 | ||
| KR1020190125607A KR102334138B1 (en) | 2019-10-10 | 2019-10-10 | Sawing Apparatus of Semiconductor Device |
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| Publication Number | Publication Date |
|---|---|
| CN112652577A true CN112652577A (en) | 2021-04-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011057408.4A Pending CN112652577A (en) | 2019-10-10 | 2020-09-30 | Semiconductor material cutting device |
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|---|---|
| KR (1) | KR102334138B1 (en) |
| CN (1) | CN112652577A (en) |
| TW (1) | TWI728907B (en) |
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- 2019-10-10 KR KR1020190125607A patent/KR102334138B1/en active IP Right Grant
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Also Published As
| Publication number | Publication date |
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| TWI728907B (en) | 2021-05-21 |
| KR20210042711A (en) | 2021-04-20 |
| TW202115813A (en) | 2021-04-16 |
| KR102334138B1 (en) | 2021-12-01 |
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