CN112626455A - Vacuum system for controlling reactive sputtering plume of flexible CIGS (copper indium gallium selenide) film - Google Patents
Vacuum system for controlling reactive sputtering plume of flexible CIGS (copper indium gallium selenide) film Download PDFInfo
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- CN112626455A CN112626455A CN202011493803.7A CN202011493803A CN112626455A CN 112626455 A CN112626455 A CN 112626455A CN 202011493803 A CN202011493803 A CN 202011493803A CN 112626455 A CN112626455 A CN 112626455A
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- vacuum system
- copper cover
- cavity
- plume
- flexible cigs
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to a solar cell processing apparatus. The utility model provides a vacuum system of flexible CIGS film reaction sputtering plume control, includes the cavity, is equipped with oil temperature drum in the cavity, is equipped with a plurality of copper cover below oil temperature drum, is the coiled material passageway between copper cover and oil temperature drum, the copper cover towards coiled material one side opening, be equipped with target and air duct in the copper cover, the air duct on be connected with gas flowmeter, the air duct on be equipped with the gas pocket. The invention provides a vacuum system structure for controlling reactive sputtering plume of a flexible CIGS thin film, which has good formed plume state, strong controllability on sputtering of different materials and good uniform coating effect; the technical problems of unstable sputtering plume, uneven coating and poor sputtering controllability of different materials in the prior art are solved.
Description
Technical Field
The invention relates to a processing device of a solar cell, in particular to a magnetron sputtering vacuum device of a flexible copper indium gallium selenide thin-film solar cell.
Background
The current global photovoltaic market is mainly crystalline silicon solar cells, but the rapid consumption of energy resources caused by a high-energy-consumption production process cannot be borne by the society, and the larger-scale development of the photovoltaic industry is bound to be restricted. Therefore, the development of low-cost, new thin-film solar cells is a necessary trend in the future international photovoltaic industry.
The high-efficiency thin-film solar cell taking copper indium gallium selenide as an absorption layer is generally called a copper indium gallium selenide cell (CIGS cell), and the CIGS thin-film solar cell is taken as a flexible solar cell and is characterized by high technical requirement, portability, no phenomenon of light-induced decay, high conversion efficiency and stable performance.
When the flexible solar cell is produced, materials need to be sputtered on the flexible solar cell roll, and in the existing vacuum sputtering production process, the vacuumizing consumption time is too long, the vacuum degree does not reach the standard, and the coating process is not uniform.
Disclosure of Invention
The invention provides a vacuum system structure for controlling reactive sputtering plume of a flexible CIGS thin film, which has good formed plume state, strong controllability on sputtering of different materials and good uniform coating effect; the technical problems of unstable sputtering plume, uneven coating and poor sputtering controllability of different materials in the prior art are solved.
The invention also provides a vacuum system for controlling the reactive sputtering plume of the flexible CIGS thin film, which has short vacuum speed of the cavity and stable vacuum state; the technical problems that the cavity vacuumizing speed is long and the vacuum state is unstable in the prior art are solved.
The technical problem of the invention is solved by the following technical scheme: the utility model provides a vacuum system of flexible CIGS film reaction sputtering plume control, includes the cavity, is equipped with oil temperature drum in the cavity, is equipped with a plurality of copper cover below oil temperature drum, is the coiled material passageway between copper cover and oil temperature drum, the copper cover towards coiled material one side opening, be equipped with target and air duct in the copper cover, the air duct on be connected with gas flowmeter, the air duct on be equipped with the gas pocket. The part of copper sheathing towards the top coiled material is the open-ended, when the cavity evacuation, also reach in the copper sheathing with the cavity vacuum always, then through control gas flowmeter, let each copper sheathing atmospheric pressure different, and because the separation of copper sheathing wall between each copper sheathing, can realize respectively not influencing each other again at each copper sheathing, realize selecting different atmospheric pressure according to the target of difference in the copper sheathing of difference, thereby let sputter more even according to the difference of material, form the plume, the coating process quality improves.
Preferably, the target material is arranged along the width direction of the coiled material, and the gas guide pipe is positioned below the target material. According to the requirements of magnetic field intensity and angle change of magnetron sputtering, the optimal sputtering effect can be achieved.
Preferably, the target is cylindrical, and the length of the target is the same as the width of the coil. The cylindrical target material enables the utilization rate of the target material to reach 85%.
Preferably, a bottom plate of the oil temperature drum is provided with a fixing strip, the fixing strip is provided with a clamping groove, and a copper cover is provided with a clamping edge matched with the clamping groove. The copper cover is convenient to assemble and disassemble.
Preferably, one end of the target and one end of the air duct are fixed on the front wall of the cavity, and the end, connected with the front wall of the cavity, of the copper cover is sealed through a sealing ring. The target and the air duct are fixed on the front wall of the cavity, the target and the air duct are just in the copper cover when the cavity is closed, the target is separated from the copper cover when the front cavity and the rear cavity are separated, the front end of the copper cover and the front cavity are sealed by sealing rings, and the copper cover is sealed by the sealing rings when the cavity is closed.
Preferably, a pressure gauge is arranged in the copper cover. The pressure in the copper cover is monitored at any time and then adjusted through a gas flowmeter.
Preferably, a vacuum system is formed in the cavity, and the vacuum system comprises a rough pumping pump set, a molecular pump, a cold trap, a backing pump, a cold pump and a composite vacuum gauge. The cavity starts to vacuumize from the atmospheric pressure, a rough pump set is started firstly, the rough pump set reaches the level of-2 torr within 15 minutes, a cold trap is started, the temperature of the cold trap can be between-120 ℃ and-130 ℃, the pressure can reach-3 torr within 2 minutes, a backing pump and a molecular pump are started after the rough pump set is closed, the vacuum degree is rapidly reduced to-6 torr within about 1 hour, and the cold pump is started for about 15 minutes to reach the vacuum degree of-7 torr to reach the bulk vacuum degree.
Therefore, the vacuum system for controlling the reactive sputtering plume of the flexible CIGS thin film has the following advantages:
1. the vacuum pipeline is in an intercommunicated state in the vacuumizing state, so that the vacuumizing speed can be increased, the vacuum requirement of the body is met, and the vacuum pipeline is also in an intercommunicated state in the production process to keep the vacuum stable;
2. the gas flow is controlled by adopting each copper cover, and different flows are controlled according to different targets to form a stable coating;
3. the gas flow control is stable, and a plume is formed in the copper shield during sputtering.
Drawings
Fig. 1 is a schematic diagram of a flexible CIGS thin film reactive sputtering plume controlled vacuum system of the present invention.
Fig. 2 is a side view of the chamber portion of fig. 1.
Fig. 3 is a perspective view of the copper cap of fig. 2.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings.
Example (b):
as shown in fig. 1, 2 and 3, the vacuum system for controlling the reactive sputtering plume of the flexible CIGS thin film comprises a cavity 1, wherein an unwinding roller 5, an oil temperature drum 2 and a winding roller 6 are arranged in the cavity 1 at one time, and a driving roller 4 is connected among the unwinding roller 5, the oil temperature drum 2 and the winding roller 6. The bottom plate of the oil temperature drum 2 is provided with a fixing strip, the fixing strip is provided with a clamping groove, and the copper cover 7 is provided with a clamping edge 20 matched with the clamping groove. The flexible coiled material 8 sequentially passes through the unreeling roller 5, the driving roller 4, the copper cover 7, the oil temperature drum 2 and the reeling roller 6to form a reeling state.
A vacuum system is formed in the chamber 1, and the vacuum system comprises a rough pumping set 11, a molecular pump 9, a cold trap 3, a backing pump 12, a cold pump 21 and a composite vacuum gauge 10. The vacuum pumping action of the cavity 1 is started from the atmospheric pressure, the rough pump set 11 is started firstly, the level of reaching-2 torr is displayed by a vacuum gauge 10 within 15 minutes, then the cold trap 3 is started, the temperature of the cold trap 3 can be between-120 ℃ and-130 ℃, the level can reach-3 torr within 2 minutes, the pre-pump 12 and the molecular pump 9 are started after the rough pump set 11 is closed, the vacuum degree is rapidly reduced to-6 torr within about 1 hour, and the vacuum degree can reach-7 torr to reach the bulk vacuum degree after the cold pump 21 is started for about 15 minutes.
An air guide tube perpendicular to the front wall 13 of the cavity and a cylindrical target 16 are fixed on the front wall 13 of the cavity, and the target 16 is positioned above the air guide tube 15. Holes 17 with the diameter of 0.4mm are uniformly formed in the air guide tube 15, and a gas flowmeter 18 is connected to the air guide tube to control the flow rate of the air in the air guide tube. Copper sheathing 7 is fixed in oil temperature 2 below of bulging, and oil temperature is bulged 2 and is located cavity 1, and the antetheca lock of cavity is on the terminal surface before the cavity. When the front wall of the cavity is buckled on the cavity, the target 16 and the air duct 17 just penetrate into the inner cavity of the copper cover, and the copper cover is also internally provided with a pressure gauge 19 for testing the air pressure in the copper cover. The end face of the copper cover is sealed with the front wall of the cavity through a sealing ring 14.
Claims (7)
1. The utility model provides a vacuum system of flexible CIGS film reaction sputtering plume control, includes the cavity, is equipped with oil temperature drum in the cavity, is equipped with a plurality of copper cover below oil temperature drum, is the coiled material passageway between copper cover and oil temperature drum, its characterized in that: the copper cover is provided with an opening towards one side of the coiled material, a target material and an air guide pipe are arranged in the copper cover, the air guide pipe is connected with a gas flowmeter, and the air guide pipe is provided with an air hole.
2. The flexible CIGS thin film reactive sputtering plume controlled vacuum system as claimed in claim 1 wherein: the target material is arranged along the width direction of the coiled material, and the air guide pipe is positioned below the target material.
3. A flexible CIGS thin film reactive sputtering plume controlled vacuum system as claimed in claim 1 or 2 wherein: the target is cylindrical, and the length of the target is the same as the width of the coiled material.
4. A flexible CIGS thin film reactive sputtering plume controlled vacuum system as claimed in claim 1 or 2 wherein: the bottom plate of the oil temperature drum is provided with a fixing strip, the fixing strip is provided with a clamping groove, and the copper cover is provided with a clamping edge matched with the clamping groove.
5. A flexible CIGS thin film reactive sputtering plume controlled vacuum system as claimed in claim 1 or 2 wherein: one end of the target and one end of the air duct are fixed on the front wall of the cavity, and the end, connected with the front wall of the cavity, of the copper cover is sealed through a sealing ring.
6. A flexible CIGS thin film reactive sputtering plume controlled vacuum system as claimed in claim 1 or 2 wherein: a pressure gauge is arranged in the copper cover.
7. A flexible CIGS thin film reactive sputtering plume controlled vacuum system as claimed in claim 1 or 2 wherein: a vacuum system is formed in the cavity and comprises a rough pumping pump group, a molecular pump, a cold trap, a backing pump, a cold pump and a composite vacuum gauge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011493803.7A CN112626455A (en) | 2020-12-17 | 2020-12-17 | Vacuum system for controlling reactive sputtering plume of flexible CIGS (copper indium gallium selenide) film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011493803.7A CN112626455A (en) | 2020-12-17 | 2020-12-17 | Vacuum system for controlling reactive sputtering plume of flexible CIGS (copper indium gallium selenide) film |
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| Publication Number | Publication Date |
|---|---|
| CN112626455A true CN112626455A (en) | 2021-04-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011493803.7A Pending CN112626455A (en) | 2020-12-17 | 2020-12-17 | Vacuum system for controlling reactive sputtering plume of flexible CIGS (copper indium gallium selenide) film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114672784A (en) * | 2022-03-28 | 2022-06-28 | 尚越光电科技股份有限公司 | Flexible reel-to-reel CIGS evaporation plume control structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204490985U (en) * | 2015-02-18 | 2015-07-22 | 南京汇金锦元光电材料有限公司 | Flexible transparent conductive film and preparation facilities thereof |
| CN108649007A (en) * | 2018-06-14 | 2018-10-12 | 浙江尚越新能源开发有限公司 | Flexible solar battery window layer production equipment |
-
2020
- 2020-12-17 CN CN202011493803.7A patent/CN112626455A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204490985U (en) * | 2015-02-18 | 2015-07-22 | 南京汇金锦元光电材料有限公司 | Flexible transparent conductive film and preparation facilities thereof |
| CN108649007A (en) * | 2018-06-14 | 2018-10-12 | 浙江尚越新能源开发有限公司 | Flexible solar battery window layer production equipment |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114672784A (en) * | 2022-03-28 | 2022-06-28 | 尚越光电科技股份有限公司 | Flexible reel-to-reel CIGS evaporation plume control structure |
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