CN112567502B - 蚀刻的方法和等离子体处理装置 - Google Patents

蚀刻的方法和等离子体处理装置 Download PDF

Info

Publication number
CN112567502B
CN112567502B CN201980053944.6A CN201980053944A CN112567502B CN 112567502 B CN112567502 B CN 112567502B CN 201980053944 A CN201980053944 A CN 201980053944A CN 112567502 B CN112567502 B CN 112567502B
Authority
CN
China
Prior art keywords
region
substrate
gas
plasma
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201980053944.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN112567502A (zh
Inventor
岩野光纮
细谷正德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN112567502A publication Critical patent/CN112567502A/zh
Application granted granted Critical
Publication of CN112567502B publication Critical patent/CN112567502B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201980053944.6A 2018-08-24 2019-08-13 蚀刻的方法和等离子体处理装置 Active CN112567502B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018-157570 2018-08-24
JP2018157570A JP7110034B2 (ja) 2018-08-24 2018-08-24 エッチングする方法及びプラズマ処理装置
PCT/JP2019/031859 WO2020040005A1 (ja) 2018-08-24 2019-08-13 エッチングする方法及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
CN112567502A CN112567502A (zh) 2021-03-26
CN112567502B true CN112567502B (zh) 2024-08-20

Family

ID=69592629

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980053944.6A Active CN112567502B (zh) 2018-08-24 2019-08-13 蚀刻的方法和等离子体处理装置

Country Status (6)

Country Link
US (1) US11710643B2 (https=)
JP (1) JP7110034B2 (https=)
KR (1) KR102767140B1 (https=)
CN (1) CN112567502B (https=)
TW (1) TWI811432B (https=)
WO (1) WO2020040005A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7123287B1 (ja) * 2020-09-18 2022-08-22 東京エレクトロン株式会社 エッチング方法、プラズマ処理装置、基板処理システム、及びプログラム
JP7492928B2 (ja) * 2021-02-10 2024-05-30 東京エレクトロン株式会社 基板支持器、プラズマ処理システム及びプラズマエッチング方法
US12347645B2 (en) * 2021-04-27 2025-07-01 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
TW202414581A (zh) * 2021-06-22 2024-04-01 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置
US12308250B2 (en) * 2022-05-12 2025-05-20 Tokyo Electron Limited Pre-etch treatment for metal etch
CN119340234A (zh) * 2023-07-20 2025-01-21 中微半导体设备(上海)股份有限公司 用于等离子体刻蚀的气体、气体组合、刻蚀方法及设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0777267A1 (en) * 1995-11-28 1997-06-04 Applied Materials, Inc. Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography
CN103943489A (zh) * 2013-01-21 2014-07-23 东京毅力科创株式会社 多层膜的蚀刻方法
CN104867827A (zh) * 2014-02-24 2015-08-26 东京毅力科创株式会社 蚀刻方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09270416A (ja) * 1996-03-29 1997-10-14 Sony Corp ドライエッチング装置およびドライエッチング方法
JP2001053061A (ja) 1999-08-06 2001-02-23 Hitachi Ltd ドライエッチング方法
WO2002037541A2 (en) * 2000-11-01 2002-05-10 Applied Materials, Inc. Etch chamber for etching dielectric layer with expanded process window
US7547635B2 (en) * 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
JP4643916B2 (ja) * 2004-03-02 2011-03-02 株式会社アルバック 層間絶縁膜のドライエッチング方法及びその装置
US20070246354A1 (en) 2006-04-19 2007-10-25 Maxim Integrated Products, Inc. Plasma systems with magnetic filter devices to alter film deposition/etching characteristics
WO2008140012A1 (ja) * 2007-05-11 2008-11-20 Ulvac, Inc. ドライエッチング装置及びドライエッチング方法
JP5223377B2 (ja) * 2008-02-29 2013-06-26 東京エレクトロン株式会社 プラズマ処理装置用の電極、プラズマ処理装置及びプラズマ処理方法
JP2010027175A (ja) * 2008-07-23 2010-02-04 Showa Denko HD Singapore Pte Ltd 炭素膜の形成方法、磁気記録媒体の製造方法、及び炭素膜の形成装置
US8664126B2 (en) * 2011-06-10 2014-03-04 Applied Materials, Inc. Selective deposition of polymer films on bare silicon instead of oxide surface
JP5830275B2 (ja) 2011-06-15 2015-12-09 東京エレクトロン株式会社 プラズマエッチング方法
KR20150055473A (ko) * 2013-11-13 2015-05-21 삼성전자주식회사 탄소 함유 박막의 형성 방법 및 이를 이용한 반도체 소자의 제조 방법
JP6320282B2 (ja) * 2014-12-05 2018-05-09 東京エレクトロン株式会社 エッチング方法
JP2016136606A (ja) * 2015-01-16 2016-07-28 東京エレクトロン株式会社 エッチング方法
JP6438831B2 (ja) * 2015-04-20 2018-12-19 東京エレクトロン株式会社 有機膜をエッチングする方法
JP6689674B2 (ja) 2016-05-30 2020-04-28 東京エレクトロン株式会社 エッチング方法
JP6670707B2 (ja) 2016-08-24 2020-03-25 東京エレクトロン株式会社 基板処理方法
JP6851217B2 (ja) * 2017-02-16 2021-03-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0777267A1 (en) * 1995-11-28 1997-06-04 Applied Materials, Inc. Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography
CN103943489A (zh) * 2013-01-21 2014-07-23 东京毅力科创株式会社 多层膜的蚀刻方法
CN104867827A (zh) * 2014-02-24 2015-08-26 东京毅力科创株式会社 蚀刻方法

Also Published As

Publication number Publication date
CN112567502A (zh) 2021-03-26
TW202027161A (zh) 2020-07-16
JP7110034B2 (ja) 2022-08-01
KR102767140B1 (ko) 2025-02-13
TWI811432B (zh) 2023-08-11
US20210335623A1 (en) 2021-10-28
JP2020031190A (ja) 2020-02-27
WO2020040005A1 (ja) 2020-02-27
KR20210041072A (ko) 2021-04-14
US11710643B2 (en) 2023-07-25

Similar Documents

Publication Publication Date Title
CN112567502B (zh) 蚀刻的方法和等离子体处理装置
CN109559968B (zh) 等离子体处理装置
CN115938906B (zh) 等离子体处理装置
CN111105973B (zh) 清洗方法及等离子体处理装置
US20240290625A1 (en) Plasma processing apparatus
KR102723940B1 (ko) 에칭 방법
CN113496889B (zh) 蚀刻方法和等离子体处理装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant