CN112567495A - 半导体结构及其形成方法 - Google Patents

半导体结构及其形成方法 Download PDF

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Publication number
CN112567495A
CN112567495A CN201880096595.1A CN201880096595A CN112567495A CN 112567495 A CN112567495 A CN 112567495A CN 201880096595 A CN201880096595 A CN 201880096595A CN 112567495 A CN112567495 A CN 112567495A
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bonding
adhesion
layer
stack
semiconductor structure
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CN201880096595.1A
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CN112567495B (zh
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陈俊
华子群
胡思平
王家文
王涛
朱继锋
丁滔滔
王新胜
朱宏斌
程卫华
杨士宁
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Yangtze Memory Technologies Co Ltd
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Yangtze Memory Technologies Co Ltd
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Abstract

本发明涉及一种半导体结构及其形成方法，所述半导体结构包括：第一基底；在所述第一基底表面上的第一粘附/键合叠层，所述第一粘附/键合叠层包括至少一层第一粘附层和至少一层第一键合层，所述第一粘附层和第一键合层分别采用不同的材料，所述第一键合层的材料为包括Si、N和C的介质材料，所述第一粘附层的材料为包括Si和N的介质材料。所述半导体结构的第一粘附/键合叠层在键合时能够具有较高的键合力。

Description

PCT国内申请，说明书已公开。

Claims (20)

  1. PCT国内申请，权利要求书已公开。
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