CN112563169B - Hot plate device for removing photoresist by plasma dry method and using method thereof - Google Patents
Hot plate device for removing photoresist by plasma dry method and using method thereof Download PDFInfo
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- CN112563169B CN112563169B CN202011446213.9A CN202011446213A CN112563169B CN 112563169 B CN112563169 B CN 112563169B CN 202011446213 A CN202011446213 A CN 202011446213A CN 112563169 B CN112563169 B CN 112563169B
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Abstract
The invention relates to the technical field of plasma photoresist removers, and particularly discloses a hot plate device for removing photoresist by a plasma dry method; the heating device comprises a process cavity, wherein a heating disc body is fixedly arranged in the process cavity, T-shaped insertion grooves are formed in the front side surface and the rear side surface of the heating disc body, and resistance heating rod penetrating grooves are formed in the heating disc body, which is positioned on the inner side of each T-shaped insertion groove; a plurality of first threaded holes are uniformly formed in the side face of the heating plate body positioned above and below the T-shaped insertion groove, a T-shaped resistance rod fixing block matched with the T-shaped insertion groove is arranged in the T-shaped insertion groove, first through holes corresponding to the first threaded holes are formed in the upper side and the lower side of the outer end of the T-shaped resistance rod fixing block, and fixing bolts in threaded connection with the first threaded holes are arranged in the first through holes; the heater in the heating plate disclosed by the invention is fixedly detachably designed, and can be independently replaced after being damaged, so that the maintenance and production cost is greatly reduced, and meanwhile, the double-station design can simultaneously meet the process temperature requirements of two product pieces.
Description
Technical Field
The invention relates to the technical field of plasma photoresist removers, and particularly discloses a hot plate device for removing photoresist by a plasma dry method and a using method thereof.
Background
The manufacturing process of the semiconductor device comprises thin film deposition, exposure, etching, photoresist removal and wet cleaning, wherein the photoresist removal is carried out on a plasma photoresist remover. The heating plate of the existing ion photoresist removing machine is divided into a flat type and a groove type. Wherein flat formula heating plate leads to the wafer to be heated too fast because the back direct contact of heating plate and wafer, makes the degree of consistency of sculpture photoresist poor, and the groove type heating plate is more even to the surface heating of the heating of wafer, and its heating effect is better.
The utility model with the patent number of CN211017022U discloses a heating plate of a plasma degumming machine, which comprises a plate body, wherein a heating groove is formed in the inner side of the plate body, a heating layer is arranged below the heating groove in the plate body, four groups of support rods are fixedly arranged in the heating groove, supporting heat-conducting blocks are fixedly arranged at the upper ends of the support rods, a wafer is movably placed in the heating groove, the wafer is movably connected with the supporting heat-conducting blocks, and a heat-insulating cover is fixedly arranged above the heating groove on the upper surface of the plate body; the wafer can keep balanced heating in the dry method degumming process of the heating plate of the plasma degumming machine disclosed by the utility model, the degumming effect is excellent, but some defects exist; firstly, the heater in the heating plate of the plasma degumming machine disclosed by the utility model is fixed with the plate body in a welding way, the heater can only be integrally replaced with the heating plate after being damaged, the maintenance cost is high, and the production cost is higher for manufacturers; secondly, the heating plate of the existing plasma photoresist remover can only remove photoresist on one wafer by a dry method at a time, and the photoresist removing effect is low in efficiency; thirdly, the heating plate is heated by the resistance heating rod when the heating plate is arranged inside the heating plate, and the heat of the resistance heating rod is concentrated, so that the generated heat can not be uniformly and quickly transferred to the heating plate. Therefore, aiming at the three defects of the heating plate in the existing plasma degumming machine, the design of the plasma dry degumming hot plate device which can remove photoresist on a plurality of wafers at one time without replacing the whole heating plate after the heater is damaged and can ensure that the temperature of the upper surface of the whole heating plate is uniform is a technical problem to be solved at present.
Disclosure of Invention
The invention aims to solve the technical problems of the heating plate in the existing plasma degumming machine and three defects in the background technology, and designs a heating plate device for plasma dry degumming, which can perform dry degumming on a plurality of wafers at one time without integrally replacing the heating plate after a heater is damaged and enables the temperature of the upper surface of the whole heating plate to be uniform, so as to solve the problems or the defects brought by the heating plate in the existing plasma degumming machine in the actual use process.
The invention is realized by the following technical scheme:
a hot plate device for removing glue by a plasma dry method comprises a process cavity body, wherein a heating groove is formed in the upper surface of the process cavity body, a heating plate body is fixedly arranged in the heating groove, a heat insulation connecting post is fixedly connected to the center of the lower surface of the heating plate body, the lower end of the heat insulation connecting post is fixedly connected with the bottom wall of the heating groove, T-shaped insertion grooves are formed in the front side and the rear side of the heating plate body, a resistance heating rod penetrating groove is formed in the heating plate body on the inner side of each T-shaped insertion groove, the resistance heating rod penetrating grooves are communicated with the inner wall of the corresponding T-shaped insertion groove, a resistance heating rod is inserted into each resistance heating rod penetrating groove, the two ends of each resistance heating rod are respectively connected with a positive end and a negative end, a power supply positive end and a power supply negative end are arranged on the lower surface of the process cavity body, the power supply positive end extends into the process cavity body to be connected with the two positive ends, the power supply negative electrode end extends into the process cavity and is connected with the two negative electrode ends;
a plurality of first threaded holes are uniformly formed in the side face of the heating plate body above and below the T-shaped insertion groove, a T-shaped resistance rod fixing block matched with the T-shaped insertion groove is arranged in the T-shaped insertion groove, the T-shaped resistance rod fixing block is made of heat conduction materials, an arc-shaped groove attached to the side face of the resistance heating rod is formed in the inner side face of the T-shaped resistance rod fixing block, first through holes corresponding to the first threaded holes are formed in the upper side and the lower side of the outer end of the T-shaped resistance rod fixing block, and fixing bolts in threaded connection with the first threaded holes are arranged in the first through holes;
the wafer extraction port is formed in the rear side face of the process cavity, the horizontal height of the wafer extraction port is parallel to the upper surface of the heating disc body, a plurality of second threaded holes are uniformly formed in the left end and the right end of the upper surface of the process cavity, a sealing cover is arranged at the upper end of the process cavity, a second through hole corresponding to each second threaded hole is formed in each of the front end and the rear end of the sealing cover, fastening screws in threaded connection with the second threaded holes are arranged in the second through holes, a strip-shaped insertion groove communicated with the wafer extraction port is formed in the process cavity above the wafer extraction port, strip-shaped through holes corresponding to the strip-shaped insertion grooves are formed in the rear end of the sealing cover, a baffle capable of sealing the wafer extraction port is inserted into each strip-shaped through hole, and a horizontal anti-falling plate is arranged at the upper end of each baffle.
As a further arrangement of the scheme, the heating tray body is rectangular, and a first station and a second station are arranged at the left end and the right end of the upper surface of the heating tray body; through setting up the heating disk body into rectangle to both ends respectively set up a station about rectangular heating disk body, it can realize through heating two wafers and realize that the dry process strips, can satisfy the technology temperature demand of two product pieces simultaneously, can be suitable for 4 cun, 6 cun and 8 cun product technology simultaneously.
As a further arrangement of the above scheme, the upper surfaces of the first station and the second station are both provided with a groove group; the design of its slot group can avoid the whole contacts of wafer and heating disk body upper surface, and it can prevent that the wafer from being heated at the excessive speed, makes the homogeneity of sculpture photoresist relatively poor.
As a further arrangement of the above scheme, the groove group is composed of a plurality of concentric ring grooves, a plurality of longitudinal grooves and a transverse groove; the shape design of the groove group is not limited to this, and may be further modified or rearranged according to the actual situation.
As a further arrangement of the scheme, a temperature measuring rod penetrating through the lower surface of the process cavity is arranged on the lower surface of the process cavity, and the upper end of the temperature measuring rod is connected with the heating plate body; the temperature measuring rod can feed back the surface temperature of the heating disc body in real time, so that the heating disc body is prevented from being heated too high; in addition, a plurality of the temperature measuring rods are provided with two stations, the temperature measuring rods can be arranged into two and are respectively connected with the lower surface of the heating disc body below each station, and therefore real-time monitoring on the temperature of the heating disc body of each station is achieved.
As a further arrangement of the above scheme, an over-temperature protector penetrating through the lower surface of the process cavity is arranged on the lower surface of the process cavity; its excess temperature protector can constitute the system of an automatic monitoring heating disk body with the temperature probe, and when the high temperature of temperature probe feedback can damage the wafer, its excess temperature protector can fuse whole circuit to realize the cooling of resistance heating stick.
As a further arrangement of the scheme, a name plate is arranged on the front side surface of the process cavity; the name plate is arranged to display the relevant information of the whole device.
As a further arrangement of the scheme, the heating disc body is made of aluminum with the surface subjected to anodic oxidation treatment, and the heat insulation connecting column is made of ceramic materials; the heating disk body is made of aluminum with the surface subjected to anodic oxidation treatment, so that heat can be efficiently transferred to the surface of a product, the uniformity of the process temperature at each part of the product is maintained, and meanwhile, the heating disk body has the process characteristics of better corrosion resistance, insulation and good heat conduction performance; the heat insulation connecting column is made of ceramic materials, has good strength and hardness while having heat insulation performance, and can fix the heating disc body in the heating groove.
As a further arrangement of the above scheme, the T-shaped resistor rod fixing block is made of aluminum or copper material; the T-shaped resistance rod fixing block can have excellent heat conduction performance, heat generated by the resistance heating rod can be completely dispersed on the T-shaped resistance rod fixing block, and then the heating disk body is heated more uniformly through a more uniform heat transfer process.
A use method of the hot plate device for removing the photoresist by the plasma dry method comprises the following steps:
s1: placing a wafer to be subjected to photoresist stripping on a station on the upper surface of the heating plate body by using a manipulator;
s2: closing a sealing cover above the process cavity, communicating the positive end of the power supply with the negative end of the power supply, heating the resistance heating rod, diffusing heat generated by the resistance heating rod to the surface of the heating disc body, transmitting the heat generated by the resistance heating rod to the T-shaped resistance rod fixing block, and more uniformly transmitting the heat to the heating disc body through the T-shaped resistance rod fixing block;
s3: heating the wafer after the upper surface of the heating disc body is heated, thereby realizing dry-method photoresist removing;
s4: after the photoresist on the surface of the wafer is completely removed, the baffle is lifted, and then the manipulator extends into the heating groove from the wafer taking-out opening to take out the wafer.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention discloses a hot plate device for removing glue by a plasma dry method, which is characterized in that a T-shaped insertion groove and a resistance heating rod penetrating groove which are mutually communicated are formed in the front side surface and the rear side surface of the hot plate device, the resistance heating rod is arranged in the resistance heating rod penetrating groove, and then a T-shaped resistance rod fixing block is inserted into the T-shaped insertion groove and fixed by bolts, so that the fixing effect on the resistance heating rod is realized.
2. The invention discloses a hot plate device for removing glue by a plasma dry method, which is characterized in that when a resistance heating rod is detachably fixed, the whole resistance heating rod and a T-shaped resistance rod fixing block are mutually fixed in an extrusion mode, the T-shaped resistance rod fixing block is made of a heat conducting material, heat on the resistance heating rod can be quickly transferred to the surface of the T-shaped resistance rod fixing block, and then the heat is more uniformly transferred to a heating plate body through the T-shaped resistance rod fixing block.
3. The heating disc body can be also provided with a plurality of stations, dry-method photoresist removing processing can be performed on a plurality of wafers, the process temperature requirements of two or more wafers are met, the dry-method photoresist removing device is suitable for 4-inch, 6-inch and 8-inch product processes, the dry-method photoresist removing efficiency is high, and the application range is wide.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic perspective view of the present invention;
FIG. 2 is a schematic view of the front view internal plan structure of the present invention;
FIG. 3 is a side view of the internal planar structure of the present invention;
FIG. 4 is a side view of the heating plate of the present invention showing the internal planar structure;
FIG. 5 is a schematic view of the three-dimensional process at A in FIG. 3 according to the present invention;
FIG. 6 is a schematic perspective view of a T-shaped resistor rod fixing block according to the present invention;
fig. 7 is a schematic perspective view of the sealing cap of the present invention.
Wherein the content of the first and second substances,
1-a process cavity, 101-a heating groove, 102-a wafer taking-out port and 103-a nameplate;
2-heating a disc body, 201-T-shaped insertion grooves, 202-resistance heating rod through grooves, 203-first threaded holes, 204-first stations, 205-second stations and 206-groove groups;
3-resistance heating rod, 301-positive terminal, 302-negative terminal
4-power supply positive terminal, 5-power supply negative terminal, 6-T-shaped resistance rod fixing block, 7-temperature measuring rod, 8-over-temperature protector, 9-heat insulation connecting column, 10-sealing cover, 11-fastening screw, 12-strip insertion groove, 13-strip through hole, 14-baffle plate and 15-horizontal anti-falling plate.
Detailed Description
In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only partial embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention.
It should be noted that the terms "first", "second" and the like in the description of the present invention are used for convenience only to describe different components, and are not to be construed as indicating or implying a sequential relationship, relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first", "second", may explicitly or implicitly include at least one of the feature.
The hot plate device for removing photoresist by the plasma dry method disclosed by the invention is further explained with reference to the attached drawings 1-7.
Example 1
This embodiment 1 discloses a hot plate device for removing photoresist by a plasma dry method, and referring to fig. 1, one main body of the hot plate device comprises a process chamber 1, the process chamber 1 is integrally rectangular, and a heating groove 101 is formed in the upper surface of the process chamber 1. Meanwhile, a wafer taking-out port 102 is formed in the rear side surface of the process cavity 1, and a nameplate plate 103 is arranged on the front side surface of the process cavity 1; the wafer taking-out port 102 can be arranged to take out the wafer after the dry stripping by a mechanical hand, and the name plate 103 can be arranged to display the relevant information of the whole device.
Referring to fig. 1, a heating tray body 2 is fixedly arranged in a heating groove 101, and in particular, when the heating tray body 2 is arranged, the heating tray body 2 is made of aluminum with the surface subjected to anodic oxidation treatment, the aluminum subjected to anodic oxidation treatment is made into the heating tray body 2, so that heat can be efficiently conducted to the surface of a product, uniformity of process temperature at each position of the product is maintained, and meanwhile, the heating tray body can have good process characteristics of corrosion resistance, insulation and good heat conduction performance. The lower surface center department fixedly connected with of heating disk body 2 separates heat exchanger column 9, and this separates heat exchanger column 9 has ceramic material to make, and its ceramic material still has better intensity and hardness when having heat-proof quality, can be with heating disk body 2 fixed setting in the heating recess. Then, the lower end of the heat insulation connecting column 9 is fixedly connected with the bottom wall of the heating groove 101, the heating tray body 2 is arranged in the heating groove 101 through the heat insulation connecting column 9, and the upper surface of the heating tray body 2 is controlled to be parallel to the wafer taking-out port 102. In this embodiment 1, a station for removing photoresist on a wafer by a dry method is disposed on the upper surface of the heating tray body 2.
Referring to fig. 2, 3, 4, 5 and 6, T-shaped insertion grooves 201 are formed in front and rear side surfaces of the heating plate body 2, resistance heating rod penetrating grooves 202 are formed in the heating plate body 2 located inside each T-shaped insertion groove 201, and each resistance heating rod penetrating groove 202 is communicated with an inner wall of the corresponding T-shaped insertion groove 201. Each resistance heating rod penetrating groove 202 is inserted with a resistance heating rod 3, and the resistance heating rod 3 is a high-power heater with the resistance value of 9.2 ohms and can quickly respond to the set temperature. Two ends of the resistance heating rod 3 are respectively connected with a positive end 301 and a negative end 302, the lower surface of the process cavity 1 is provided with a power supply positive end 4 and a power supply negative end 5, the power supply positive end 4 extends into the process cavity 1 to be connected with the two positive ends 301, and the power supply negative end 5 extends into the process cavity 1 to be connected with the two negative ends 302.
Meanwhile, a plurality of first threaded holes 203 are uniformly formed in the side surface of the heating tray body 2 above and below the T-shaped insertion groove 201, eight first threaded holes 203 are formed in each side surface in the embodiment, and four first threaded holes are formed in the upper and lower sides of the T-shaped insertion groove 201. A T-shaped resistance rod fixing block 6 which is matched with the T-shaped insertion slot 201 is inserted into the T-shaped insertion slot 201, and the T-shaped resistance rod fixing block 6 is made of a heat conductive material, specifically, the T-shaped resistance rod fixing block 6 is made of aluminum or copper material. First through holes (not marked in the figure) corresponding to each first threaded hole 203 are formed in the upper side and the lower side of the outer end of the T-shaped resistance rod fixing block 6, fixing bolts (not shown in the figure) in threaded connection with the first threaded holes 203 are arranged in the first through holes, the T-shaped resistance rod fixing block 6 can be tightly fixed in the T-shaped insertion groove 201 through the screwed fixing bolts, the inner end of the T-shaped resistance rod fixing block 6 is fixed between resistance heating rods in a contact and extrusion mode, and heat on the resistance heating rods 3 can be transmitted to the T-shaped resistance rod fixing block 6.
Referring to fig. 1 and 7, a plurality of second threaded holes 104 are uniformly formed in the left and right ends of the upper surface of the process chamber 1, a sealing cover 10 is disposed at the upper end of the process chamber 1, second through holes corresponding to each second threaded hole 104 are formed in the front and rear ends of the sealing cover 8, fastening screws 11 screwed with the second threaded holes 104 are disposed in the second through holes, a bar-shaped insertion slot 12 communicated with the wafer extraction port 102 is formed in the process chamber 1 above the wafer extraction port 102, a bar-shaped through hole 13 corresponding to the bar-shaped insertion slot 12 is formed in the rear end of the sealing cover 8, a baffle 14 capable of sealing the wafer extraction port 102 is inserted into the bar-shaped through hole 13, and a horizontal anti-falling plate 15 is disposed at the upper end of the baffle 14.
Finally, referring to fig. 1, in this embodiment 1, a temperature measuring rod 7 penetrating through the lower surface of the process chamber 1 is further disposed on the lower surface of the process chamber 1, and the upper end of the temperature measuring rod 7 is connected to the heating tray body 2. And the lower surface of the process cavity 1 is also provided with an over-temperature protector 8 which penetrates through the lower surface of the process cavity 1, and the top end of the over-temperature protector 8 is connected with the whole circuit in series. Its excess temperature protector 8 can constitute the system of an automatic monitoring heating disk body with temperature probe 7, and when the high temperature that feeds back when temperature probe 7 can damage the wafer, its excess temperature protector 8 can fuse whole circuit to realize the cooling of resistance heating stick 3.
Example 2
The embodiment 2 discloses a hot plate device for double-station plasma dry photoresist stripping, which is improved based on the embodiment 1. The following description will be made in detail with reference to the accompanying drawings.
This embodiment 2 discloses a hot plate device of duplex position plasma dry process degumming, refer to fig. 1, and its main part one includes process cavity 1, and this process cavity 1 wholly is cuboid shape to heating groove 101 has been seted up at process cavity 1's upper surface. Meanwhile, a wafer taking-out port 102 is formed in the rear side surface of the process cavity 1, and a nameplate plate 103 is arranged on the front side surface of the process cavity 1; the wafer taking-out port 102 can be arranged to take out the wafer after the dry stripping by a mechanical hand, and the name plate 103 can be arranged to display the relevant information of the whole device.
Referring to fig. 1, a heating tray body 2 is fixedly arranged in a heating groove 101, and in particular, when the heating tray body 2 is arranged, the heating tray body 2 is made of aluminum with the surface subjected to anodic oxidation treatment, the aluminum subjected to anodic oxidation treatment is made into the heating tray body 2, so that heat can be efficiently conducted to the surface of a product, uniformity of process temperature at each position of the product is maintained, and meanwhile, the heating tray body can have good process characteristics of corrosion resistance, insulation and good heat conduction performance. The lower surface center department fixedly connected with of heating disk body 2 separates heat exchanger column 9, and this separates heat exchanger column 9 has ceramic material to make, and its ceramic material still has better intensity and hardness when having heat-proof quality, can be with heating disk body 2 fixed setting in the heating recess. Then, the lower end of the heat insulation connecting column 9 is fixedly connected with the bottom wall of the heating groove 101, the heating tray body 2 is arranged in the heating groove 101 through the heat insulation connecting column 9, and the upper surface of the heating tray body 2 is controlled to be parallel to the wafer taking-out port 102. The shape of heating disk body 2 in this embodiment 2 is the rectangle, and both ends are provided with first station 204 and second station 205 about the upper surface of heating disk body 2, and the setting of its first station 204 and second station 205 can satisfy the technology temperature demand of two product pieces simultaneously, can be suitable for 4 cun, 6 cun and 8 cun product technology simultaneously.
In addition, referring to fig. 1, in this embodiment 2, groove groups 206 are further formed on the upper surfaces of the first station 204 and the second station 205. In the specific arrangement, the groove group 206 is composed of a plurality of concentric ring grooves, a plurality of longitudinal grooves and a transverse groove, but the shape of the groove group 206 is not limited to the above design, as long as the design is reasonable.
Referring to fig. 2, 3, 4, 5 and 6, T-shaped insertion grooves 201 are formed in front and rear side surfaces of the heating plate body 2, resistance heating rod penetrating grooves 202 are formed in the heating plate body 2 located inside each T-shaped insertion groove 201, and each resistance heating rod penetrating groove 202 is communicated with an inner wall of the corresponding T-shaped insertion groove 201. Each resistance heating rod penetrating groove 202 is inserted with a resistance heating rod 3, and the resistance heating rod 3 is a high-power heater with the resistance value of 9.2 ohms and can quickly respond to the set temperature. Two ends of the resistance heating rod 3 are respectively connected with a positive end 301 and a negative end 302, the lower surface of the process cavity 1 is provided with a power supply positive end 4 and a power supply negative end 5, the power supply positive end 4 extends into the process cavity 1 to be connected with the two positive ends 301, and the power supply negative end 5 extends into the process cavity 1 to be connected with the two negative ends 302.
Meanwhile, a plurality of first threaded holes 203 are uniformly formed in the side surface of the heating tray body 2 above and below the T-shaped insertion groove 201, eight first threaded holes 203 are formed in each side surface in the embodiment, and four first threaded holes are formed in the upper and lower sides of the T-shaped insertion groove 201. A T-shaped resistance rod fixing block 6 which is matched with the T-shaped insertion slot 201 is inserted into the T-shaped insertion slot 201, and the T-shaped resistance rod fixing block 6 is made of a heat conductive material, specifically, the T-shaped resistance rod fixing block 6 is made of aluminum or copper material. First through holes (not marked in the figure) corresponding to each first threaded hole 203 are formed in the upper side and the lower side of the outer end of the T-shaped resistance rod fixing block 6, fixing bolts (not shown in the figure) in threaded connection with the first threaded holes 203 are arranged in the first through holes, the T-shaped resistance rod fixing block 6 can be tightly fixed in the T-shaped insertion groove 201 through the screwed fixing bolts, the inner end of the T-shaped resistance rod fixing block 6 is fixed between resistance heating rods in a contact and extrusion mode, and heat on the resistance heating rods 3 can be transmitted to the T-shaped resistance rod fixing block 6.
Referring to fig. 1 and 7, a plurality of second threaded holes 104 are uniformly formed in the left and right ends of the upper surface of the process chamber 1, a sealing cover 10 is disposed at the upper end of the process chamber 1, second through holes corresponding to each second threaded hole 104 are formed in the front and rear ends of the sealing cover 8, fastening screws 11 screwed with the second threaded holes 104 are disposed in the second through holes, a bar-shaped insertion slot 12 communicated with the wafer extraction port 102 is formed in the process chamber 1 above the wafer extraction port 102, a bar-shaped through hole 13 corresponding to the bar-shaped insertion slot 12 is formed in the rear end of the sealing cover 8, a baffle 14 capable of sealing the wafer extraction port 102 is inserted into the bar-shaped through hole 13, and a horizontal anti-falling plate 15 is disposed at the upper end of the baffle 14.
Finally, referring to fig. 1, in this embodiment 2, two temperature measurement rods 7 penetrating through the lower surface of the process chamber 1 are further disposed on the lower surface of the process chamber 1, the upper ends of the two temperature measurement rods 7 are respectively connected to the lower surfaces of the heating plate bodies 2 below the first station 204 and the second station, and the two temperature measurement rods 7 disposed therein can respectively not monitor the temperatures of the heating plate bodies 2 at different stations, so as to meet the process temperature requirements of two product pieces simultaneously, and can be suitable for 4 inches, 6 inches and 8 inches product processes. And the lower surface of the process cavity 1 is also provided with an over-temperature protector 8 which penetrates through the lower surface of the process cavity 1, and the top end of the over-temperature protector 8 is connected with the whole circuit in series. Its excess temperature protector 8 can constitute the system of an automatic monitoring heating disk body with temperature probe 7, and when the high temperature that feeds back when temperature probe 7 can damage the wafer, its excess temperature protector 8 can fuse whole circuit to realize the cooling of resistance heating stick 3.
The use method of the hot plate device for removing photoresist by the plasma dry method disclosed in embodiment 1 or embodiment 2 of the invention is as follows:
step 1: the wafer to be stripped is placed on a station heating the upper surface of the tray 2 using a robot.
Step 2: closing a sealing cover above the process cavity 1, and communicating the power supply positive end 4 with the power supply negative end 5, so that the resistance heating rod 3 is heated, the heat generated by the resistance heating rod 3 is diffused to the surface of the heating disk body 2, meanwhile, the heat generated by the resistance heating rod 3 is transferred to the T-shaped resistance rod fixing block 6, and then the heat is more uniformly transferred to the heating disk body 2 through the T-shaped resistance rod fixing block 6.
And step 3: and heating the wafer after the upper surface of the heating disc body 2 is heated, thereby realizing dry photoresist removal.
And 4, step 4: after the photoresist on the wafer surface is removed, the baffle plate 14 is lifted up, and the robot arm is extended into the heating groove 101 from the wafer take-out port 102 to take out the wafer.
The present invention is not limited to the above preferred embodiments, and any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. A hot plate device for removing photoresist by a plasma dry method is characterized by comprising a process cavity (1), wherein a heating groove (101) is formed in the upper surface of the process cavity (1); the heating disc body (2) is fixedly arranged in the heating groove (101), the lower surface center of the heating disc body (2) is fixedly connected with a heat insulation connecting column (9), the lower end of the heat insulation connecting column (9) is fixedly connected with the bottom wall of the heating groove (101), T-shaped insertion grooves (201) are formed in the front side and the rear side of the heating disc body (2), each resistance heating rod penetrating groove (202) is formed in the heating disc body (2) on the inner side of the T-shaped insertion groove (201), the resistance heating rods penetrate through the inner walls of the grooves (202) and the corresponding T-shaped insertion grooves (201), each resistance heating rod (3) is inserted into the corresponding resistance heating rod penetrating groove (202), the two ends of each resistance heating rod (3) are respectively connected with a positive end (301) and a negative end (302), and the lower surface of the process cavity (1) is provided with a power supply positive end (4) and a power supply negative end (5), the power supply positive end (4) extends into the process cavity (1) and is connected with the two positive ends (301), and the power supply negative end (5) extends into the process cavity (1) and is connected with the two negative ends (302);
a plurality of first threaded holes (203) are uniformly formed in the side face of the heating disc body (2) positioned above and below the T-shaped insertion groove (201), a T-shaped resistance rod fixing block (6) matched with the T-shaped insertion groove (201) is arranged in the T-shaped insertion groove (201), the T-shaped resistance rod fixing block (6) is made of a heat conduction material, an arc-shaped groove (601) attached to the side face of the resistance heating rod (3) is formed in the inner side face of the T-shaped resistance rod fixing block (6), first through holes corresponding to the first threaded holes (203) are formed in the upper side and the lower side of the outer end of the T-shaped resistance rod fixing block (6), and fixing bolts in threaded connection with the first threaded holes are arranged in the first through holes;
a wafer taking-out port (102) is formed in the rear side face of the process cavity (1), the horizontal height of the wafer taking-out port (102) is parallel to the upper surface of the heating disc body (2), a plurality of second threaded holes (104) are uniformly formed in the left end and the right end of the upper surface of the process cavity (1), a sealing cover (10) is arranged at the upper end of the process cavity (1), second through holes corresponding to each second threaded hole (104) are formed in the front end and the rear end of each sealing cover (8), fastening screws (11) in threaded connection with the second threaded holes (104) are arranged in the second through holes, a strip-shaped insertion groove (12) communicated with the wafer taking-out port (102) is formed in the process cavity (1) above the wafer taking-out port (102), and strip-shaped through holes (13) corresponding to the strip-shaped insertion grooves (12) are formed in the rear end of each sealing cover (8), the wafer taking-out device is characterized in that a baffle (14) capable of sealing the wafer taking-out port (102) is inserted into the strip-shaped through hole (13), a horizontal anti-falling plate (15) is arranged at the upper end of the baffle (14), the heating disc body (2) is rectangular, and a first station (204) and a second station (205) are arranged at the left end and the right end of the upper surface of the heating disc body (2).
2. The hot plate device for removing the photoresist by the plasma dry method according to claim 1, wherein the upper surfaces of the first station (204) and the second station (205) are provided with a groove group (206).
3. A hot plate apparatus for plasma dry stripping as claimed in claim 2, wherein said set of grooves (206) is comprised of a plurality of concentric ring grooves, a plurality of longitudinal grooves and a transverse groove.
4. The hot plate device for removing photoresist by the plasma dry method according to claim 1, wherein a temperature measuring rod (7) penetrating through the lower surface of the process cavity (1) is arranged on the lower surface of the process cavity (1), and the upper end of the temperature measuring rod (7) is connected with the heating plate body (2).
5. The hot plate device for removing photoresist by the plasma dry method according to claim 4, wherein the lower surface of the process cavity (1) is provided with an over-temperature protector (8) penetrating through the lower surface of the process cavity (1).
6. The hot plate device for removing photoresist by the plasma dry method according to the claim 1 is characterized in that the front side surface of the process cavity (1) is provided with a name plate (103).
7. The hot plate device for the plasma dry stripping of photoresist as claimed in claim 1, characterized in that the heating plate body (2) is made of aluminum with anodized surface and the thermally insulating connecting column (9) is made of ceramic material.
8. The hot plate device for removing the glue by the plasma dry method according to the claim 1, characterized in that the T-shaped resistance rod fixing block (6) is made of aluminum or copper material.
9. The use method of the hot plate device for the plasma dry stripping according to any one of claims 1 to 8 is characterized by comprising the following steps:
s1: a manipulator is used for placing the wafer to be subjected to photoresist stripping on a station on the upper surface of the heating disc body (2);
s2: closing a sealing cover above the process cavity (1), connecting a power supply positive end (4) with a power supply negative end (5) to heat the resistance heating rod (3), diffusing heat generated by the resistance heating rod (3) to the surface of the heating disk body (2), transferring the heat generated by the resistance heating rod (3) to the T-shaped resistance rod fixing block (6), and transferring the heat to the heating disk body (2) more uniformly through the T-shaped resistance rod fixing block (6);
s3: heating the wafer after the upper surface of the heating disc body (2) is heated, thereby realizing dry photoresist removal;
s4: after the photoresist on the surface of the wafer is removed completely, the baffle plate (14) is lifted up, and then the manipulator extends into the heating groove (101) from the wafer taking-out opening (102) to take out the wafer.
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| CN202011446213.9A CN112563169B (en) | 2020-12-11 | 2020-12-11 | Hot plate device for removing photoresist by plasma dry method and using method thereof |
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| CN112563169B true CN112563169B (en) | 2022-02-11 |
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| US20030215962A1 (en) * | 2002-05-14 | 2003-11-20 | Applied Materials, Inc. | Integration of multiple processes within a single chamber |
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| CN108271282A (en) * | 2017-12-27 | 2018-07-10 | 武汉微纳传感技术有限公司 | A kind of low-grade fever disk and preparation method thereof |
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Address after: 214028 No.1 Guanshan Road, Xinwu District, Wuxi City, Jiangsu Province Patentee after: Wuxi Yiwen Microelectronics Technology Co.,Ltd. Address before: 214028 No.1 Guanshan Road, Xinwu District, Wuxi City, Jiangsu Province Patentee before: WUXI YIWEN ELECTRONIC TECHNOLOGY Co.,Ltd. |