CN112534351A - 感光性树脂组合物及抗蚀图案的形成方法 - Google Patents
感光性树脂组合物及抗蚀图案的形成方法 Download PDFInfo
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- CN112534351A CN112534351A CN201980051908.6A CN201980051908A CN112534351A CN 112534351 A CN112534351 A CN 112534351A CN 201980051908 A CN201980051908 A CN 201980051908A CN 112534351 A CN112534351 A CN 112534351A
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- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- LMYRWZFENFIFIT-UHFFFAOYSA-N toluene-4-sulfonamide Chemical compound CC1=CC=C(S(N)(=O)=O)C=C1 LMYRWZFENFIFIT-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- DWWMSEANWMWMCB-UHFFFAOYSA-N tribromomethylsulfonylbenzene Chemical compound BrC(Br)(Br)S(=O)(=O)C1=CC=CC=C1 DWWMSEANWMWMCB-UHFFFAOYSA-N 0.000 description 1
- 239000001069 triethyl citrate Substances 0.000 description 1
- VMYFZRTXGLUXMZ-UHFFFAOYSA-N triethyl citrate Natural products CCOC(=O)C(O)(C(=O)OCC)C(=O)OCC VMYFZRTXGLUXMZ-UHFFFAOYSA-N 0.000 description 1
- 235000013769 triethyl citrate Nutrition 0.000 description 1
- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- FIQMHBFVRAXMOP-UHFFFAOYSA-N triphenylphosphane oxide Chemical compound C=1C=CC=CC=1P(C=1C=CC=CC=1)(=O)C1=CC=CC=C1 FIQMHBFVRAXMOP-UHFFFAOYSA-N 0.000 description 1
- JEVGKYBUANQAKG-UHFFFAOYSA-N victoria blue R Chemical compound [Cl-].C12=CC=CC=C2C(=[NH+]CC)C=CC1=C(C=1C=CC(=CC=1)N(C)C)C1=CC=C(N(C)C)C=C1 JEVGKYBUANQAKG-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
- C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
- C08F290/06—Polymers provided for in subclass C08G
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Polymerisation Methods In General (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018149985 | 2018-08-09 | ||
| JP2018-149985 | 2018-08-09 | ||
| PCT/JP2019/031219 WO2020032133A1 (ja) | 2018-08-09 | 2019-08-07 | 感光性樹脂組成物及びレジストパターンの形成方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112534351A true CN112534351A (zh) | 2021-03-19 |
Family
ID=69414762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980051908.6A Pending CN112534351A (zh) | 2018-08-09 | 2019-08-07 | 感光性树脂组合物及抗蚀图案的形成方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (2) | JP7422664B2 (ja) |
| KR (1) | KR102509152B1 (ja) |
| CN (1) | CN112534351A (ja) |
| TW (2) | TWI812546B (ja) |
| WO (1) | WO2020032133A1 (ja) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI780648B (zh) * | 2020-04-03 | 2022-10-11 | 日商旭化成股份有限公司 | 感光性元件、及抗蝕圖案之形成方法 |
| KR20230096046A (ko) * | 2021-01-29 | 2023-06-29 | 아사히 가세이 가부시키가이샤 | 감광성 엘리먼트, 및 레지스트 패턴의 형성 방법 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200600973A (en) * | 2004-05-12 | 2006-01-01 | Fuji Photo Film Co Ltd | Pattern forming material, pattern forming apparatus, and pattern forming process |
| JP2006163339A (ja) * | 2004-05-12 | 2006-06-22 | Fuji Photo Film Co Ltd | パターン形成材料、並びにパターン形成装置及びパターン形成方法 |
| NL1031119A1 (nl) * | 2005-03-24 | 2006-09-27 | Hitachi Via Mechanics Ltd | Blootstellingswerkwijze van een patroon en inrichting. |
| JP2009145613A (ja) * | 2007-12-13 | 2009-07-02 | Nippon Synthetic Chem Ind Co Ltd:The | フォトレジストフィルム、感光性樹脂組成物層およびレジストパターンの形成方法 |
| WO2017002859A1 (ja) * | 2015-06-30 | 2017-01-05 | 富士フイルム株式会社 | ネガ型感光性樹脂組成物、硬化膜、硬化膜の製造方法および半導体デバイス |
| CN108027559A (zh) * | 2015-09-11 | 2018-05-11 | 旭化成株式会社 | 感光性树脂组合物 |
| TW201820036A (zh) * | 2014-05-21 | 2018-06-01 | Asahi Kasei E Mat Corporation | 感光性樹脂組合物及電路圖案之形成方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007256832A (ja) * | 2006-03-24 | 2007-10-04 | Fujifilm Corp | パターン形成材料及びパターン形成方法 |
| JP2010091662A (ja) * | 2008-10-06 | 2010-04-22 | Hitachi Chem Co Ltd | 感光性樹脂組成物、並びにこれを用いた感光性エレメント、レジストパターンの製造法及びプリント配線板の製造法 |
| JP5287397B2 (ja) * | 2009-03-18 | 2013-09-11 | Ｊｓｒ株式会社 | アルミニウム含有感光性樹脂組成物およびパターン形成方法 |
| JP2010249884A (ja) | 2009-04-10 | 2010-11-04 | Dupont Mrc Dryfilm Ltd | 光重合性樹脂組成物およびこれを用いた感光性フィルム |
| JP5791874B2 (ja) | 2010-03-31 | 2015-10-07 | 富士フイルム株式会社 | 着色組成物、インクジェット用インク、カラーフィルタ及びその製造方法、固体撮像素子、並びに表示装置 |
| JP2015102756A (ja) | 2013-11-26 | 2015-06-04 | 富士フイルム株式会社 | タッチパネル又はディスプレイパネルの製造方法、タッチパネル、ディスプレイパネル、及び、表示装置 |
| TWI541596B (zh) * | 2013-12-26 | 2016-07-11 | Asahi Kasei E Materials Corp | A photosensitive resin composition and a photosensitive resin laminate |
| TWI667539B (zh) * | 2015-04-08 | 2019-08-01 | 日商旭化成股份有限公司 | Photosensitive resin composition |
| JP2016224161A (ja) * | 2015-05-28 | 2016-12-28 | 日立化成株式会社 | レジストパターンの形成方法、プリント配線板の製造方法及び感光性エレメント |
| JP6896383B2 (ja) * | 2016-07-22 | 2021-06-30 | 東京応化工業株式会社 | 感光性樹脂組成物、硬化膜、カラーフィルタ、及び硬化膜の製造方法 |
-
2019
- 2019-08-07 CN CN201980051908.6A patent/CN112534351A/zh active Pending
- 2019-08-07 KR KR1020207031624A patent/KR102509152B1/ko active IP Right Grant
- 2019-08-07 JP JP2020535851A patent/JP7422664B2/ja active Active
- 2019-08-07 WO PCT/JP2019/031219 patent/WO2020032133A1/ja active Application Filing
- 2019-08-08 TW TW111143862A patent/TWI812546B/zh active
- 2019-08-08 TW TW108128248A patent/TWI811423B/zh active
-
2023
- 2023-02-01 JP JP2023014176A patent/JP2023061998A/ja not_active Withdrawn
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200600973A (en) * | 2004-05-12 | 2006-01-01 | Fuji Photo Film Co Ltd | Pattern forming material, pattern forming apparatus, and pattern forming process |
| JP2006163339A (ja) * | 2004-05-12 | 2006-06-22 | Fuji Photo Film Co Ltd | パターン形成材料、並びにパターン形成装置及びパターン形成方法 |
| NL1031119A1 (nl) * | 2005-03-24 | 2006-09-27 | Hitachi Via Mechanics Ltd | Blootstellingswerkwijze van een patroon en inrichting. |
| JP2009145613A (ja) * | 2007-12-13 | 2009-07-02 | Nippon Synthetic Chem Ind Co Ltd:The | フォトレジストフィルム、感光性樹脂組成物層およびレジストパターンの形成方法 |
| TW201820036A (zh) * | 2014-05-21 | 2018-06-01 | Asahi Kasei E Mat Corporation | 感光性樹脂組合物及電路圖案之形成方法 |
| WO2017002859A1 (ja) * | 2015-06-30 | 2017-01-05 | 富士フイルム株式会社 | ネガ型感光性樹脂組成物、硬化膜、硬化膜の製造方法および半導体デバイス |
| CN108027559A (zh) * | 2015-09-11 | 2018-05-11 | 旭化成株式会社 | 感光性树脂组合物 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020032133A1 (ja) | 2020-02-13 |
| JP7422664B2 (ja) | 2024-01-26 |
| TWI812546B (zh) | 2023-08-11 |
| JPWO2020032133A1 (ja) | 2021-05-13 |
| KR20200139768A (ko) | 2020-12-14 |
| TWI811423B (zh) | 2023-08-11 |
| TW202309103A (zh) | 2023-03-01 |
| JP2023061998A (ja) | 2023-05-02 |
| TW202016154A (zh) | 2020-05-01 |
| KR102509152B1 (ko) | 2023-03-10 |
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