CN112530865A - 一种基于水导激光加工技术的后减薄晶圆划片方法 - Google Patents

一种基于水导激光加工技术的后减薄晶圆划片方法 Download PDF

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CN112530865A
CN112530865A CN201910812982.7A CN201910812982A CN112530865A CN 112530865 A CN112530865 A CN 112530865A CN 201910812982 A CN201910812982 A CN 201910812982A CN 112530865 A CN112530865 A CN 112530865A
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曹治赫
赵吉宾
乔红超
陆莹
孙博宇
张旖诺
于永飞
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Shenyang Institute of Automation of CAS
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Abstract

本发明涉及晶圆划片加工领域，具体地说是一种基于水导激光加工技术的后减薄晶圆划片方法，包括如下步骤：一、利用水导激光发生装置在晶圆正面沿划片轨迹加工出沟槽；二、在晶圆正面贴保护膜；三、利用金刚石砂轮对晶圆背面进行磨削减薄，直至步骤一中的沟槽露出；四、对晶圆清洗和干燥；五、在晶圆背面粘贴蓝膜，并撕除晶圆正面的保护膜。本发明先利用水导激光加工技术对晶圆正面进行切槽，再从晶圆背面进行减薄，有效降低了晶圆封装工序中划片工序及减薄工序中的废品率。

Description

一种基于水导激光加工技术的后减薄晶圆划片方法
技术领域
本发明涉及晶圆划片加工领域，具体地说是一种基于水导激光加工技术的后减薄晶圆划片方法。
背景技术
随着电子技术的飞速发展，各种电子产品对电子元器件的性能要求越来越高，比如芯片就逐渐呈现出轻薄化、3D堆栈化的趋势，芯片的厚度也从650μm减薄至120μm、75μm甚至50μm，但是当制作芯片的晶圆厚度减薄到100μm以下时，采用传统的高速金刚石砂轮刀片对晶圆进行划片时，由于机械切割过程中的震动以及加工产生的裂纹，都会使晶圆非常容易产生破损，致使芯片的废品率飙升。
发明内容
本发明的目的在于提供一种基于水导激光加工技术的后减薄晶圆划片方法，先利用水导激光加工技术对晶圆正面进行切槽，再从晶圆背面进行减薄，有效降低了晶圆封装工序中划片工序及减薄工序中的废品率。
本发明的目的是通过以下技术方案来实现的：
一种基于水导激光加工技术的后减薄晶圆划片方法，其特征在于：包括如下步骤：
一、利用水导激光发生装置在晶圆正面沿划片轨迹加工出沟槽；
二、在晶圆正面贴保护膜；
三、利用金刚石砂轮对晶圆背面进行磨削减薄，并使步骤一中的沟槽露出；
四、对晶圆清洗和干燥；
五、在晶圆背面粘贴蓝膜，并撕除晶圆正面的保护膜。
步骤一中采用的水导激光发生装置包括壳体、激光聚焦透镜、激光窗口和喷嘴，在所述壳体内设有液压均衡腔，且所述液压均衡腔一侧设有激光窗口，另一侧设有喷嘴，在所述壳体上设有液体接口与所述液压均衡腔相通，激光聚焦透镜设于所述壳体内且设于所述激光窗口外侧，在所述喷嘴外侧的壳体上设有射流口。
步骤三的晶圆磨削减薄过程中，先进行粗磨工序，再进行精磨工序，其中粗磨工序去除深度占总去除深度的80～90％，精磨工序去除深度占总去除深度的10～20％。
粗磨工序采用的陶瓷基金刚石砂轮磨粒粒度号为300～500#，细磨工序中采用的陶瓷基金刚石砂轮磨粒粒度号为6000～7000#。
本发明的优点与积极效果为：
1、本发明利用水导激光发生装置对晶圆正面进行切槽时，集成电路中的金属材料会和基体材料一同被均匀融化去除，切缝周边没有裂纹和热损伤，大大降低了芯片在后续工序中的破损率。
2、本发明利用陶瓷基金刚石砂轮对晶圆背面进行减薄时，采用粗磨和精磨两道工序，既保证了加工效率，又大大减小了磨削面残留的裂纹及亚表面损伤深度，且加工状态稳定，晶圆破碎的几率也很低，有效降低了芯片发生崩缺的可能。
3、本发明采用基于水导激光加工技术的后减薄晶圆划片方法，不仅可以防止超薄芯片在划片及背面减薄工序中产生破损，保证划片工序的良品率，还提高了晶圆划片工序的加工效率。
附图说明
图1为本发明的流程示意图，
图2为利用水导激光发生装置对晶圆正面加工沟槽的示意图，
图3为利用金刚石砂轮对晶圆背面减薄的示意图，
图4为完成减薄后的晶圆截面示意图，
图5为在晶圆背面粘贴蓝膜后撕掉晶圆正面保护膜的示意图，
图6为本发明采用的水导激光发生装置结构示意图。
其中，1为集成电路，2为晶圆，3为射流，4为激光，5为水导激光发生装置，501为液体接口，502为液压均衡腔，503为喷嘴，504为激光聚焦透镜，505为激光窗口，506为射流口，507为凹槽，6为保护膜，7为金刚石砂轮，8为沟槽，9为蓝膜。
具体实施方式
下面结合附图对本发明作进一步详述。
如图1所示，本发明包括如下步骤：
一、首先如图2所示，将待划片的晶圆2正面向上放到划片机吸盘中央，在所述晶圆2正面设有集成电路1，先利用水导激光发生装置5沿划片轨迹加工出具有一定深度与宽度的沟槽8，所述划片机为本领域公知技术，所述水导激光发生装置5可以喷出稳定的射流3，激光4在射流3内部发生全反射，并沿着射流3向前传导。
如图6所示，本实施例采用的水导激光发生装置5包括壳体、激光聚焦透镜504、激光窗口505和喷嘴503，在所述壳体内设有液压均衡腔502，且所述液压均衡腔502一侧设有激光窗口505，另一侧设有喷嘴503，激光聚焦透镜504设于所述壳体内且设于所述激光窗口505外侧，壳体后端设有开口且脉冲激光器发出的激光5由壳体后端开口射入后依次穿过所述激光聚焦透镜504、激光窗口505和液压均衡腔502内的液体并照射在所述喷嘴503内，在所述壳体上设有液体接口501与所述液压均衡腔502相通，在所述喷嘴503外侧的壳体上设有射流口506，压力液体经由所述液体接口501进入所述液压均衡腔502中，并经过所述喷嘴503形成射流3穿过所述射流口506喷出，照射在所述喷嘴503内的激光5在所述射流3内发生全反射并沿着射流3方向进行传播。本实施例中，所述压力液体为水，所述脉冲激光器为市购产品。
本实施例中，所述水导激光发生装置5连同脉冲激光器形成一个模块安装于一个具有X、Y、Z自由度的微型桁架机械手上，以方便调整位置，保证沟槽8的加工质量。所述桁架机械手为市购产品，本实施例中，所述桁架机械手采购于新松机器人自动化股份有限公司。
本实施例中，所述水导激光发生装置5喷出的射流3直径范围为30～100μm，水压大小为5～90MPa，加工使用的激光4为脉冲激光，加工出的沟槽8宽度为30～100μm，槽深为50～200μm，且大于晶圆2的目标厚度。
二、将划槽后的晶圆2正面向上放置在晶圆贴膜机工作台的中心位置，使用晶圆贴膜机完成晶圆2正面的保护膜6粘贴。所述晶圆贴膜机为本领域公知技术。
三、如图3～4所示，将晶圆2背面向上放入晶圆背面减薄设备中，并经过陶瓷基金刚石砂轮7的粗磨与精磨工序使步骤一中加工的沟槽8露出，本实施例中，粗磨工序去除深度占总去除深度的80～90％，精磨工序去除深度占总去除深度的10～20％，经过背面减薄后的晶圆2目标厚度为30～100μm。所述晶圆背面减薄设备为本领域公知技术，其中粗磨工序采用的陶瓷基金刚石砂轮磨粒粒度号为300～500#，细磨工序中采用的陶瓷基金刚石砂轮磨粒粒度号为6000～7000#。
四、对晶圆2上残存的切割碎屑进行清洗，完成清洗后对晶圆2进行干燥。所述清洗台为本领域公知技术，清洗台的转速为1000～1200rpm。
五、使用晶圆贴膜机完成晶圆2背面蓝膜9的粘贴作业，并如图5所示，撕除晶圆2正面的保护膜6。本实施例中，所述蓝膜9厚度为100～150μm。
本发明提出的基于水导激光加工技术的后减薄晶圆划片方法，将水导激光加工技术及晶圆后减薄划片技术有机结合，其中使用水导激光加工的方法对带有金属材料部分的晶圆进行切槽，切槽处没有裂纹与热损伤，然后再采用晶圆背面减薄技术将晶圆减薄。采用本发明提出的划片方法，不仅可以防止超薄晶圆划片过程中出现的崩碎现象，保证划片工序的良品率，还提高了晶圆划片工序的整体加工效率。另外本实施例中，所述晶圆贴膜机、晶圆背面减薄设备和清洗台集成于一个系统中，该系统为市购产品，其生产厂家为中国科学院沈阳自动化研究所，型号为siawj_1。

Claims (4)

1.一种基于水导激光加工技术的后减薄晶圆划片方法，其特征在于：包括如下步骤：
一、利用水导激光发生装置(5)在晶圆(2)正面沿划片轨迹加工出沟槽(8)；
二、在晶圆(2)正面贴保护膜(6)；
三、利用金刚石砂轮(7)对晶圆(2)背面进行磨削减薄，并使步骤一中的沟槽(8)露出；
四、对晶圆(2)清洗和干燥；
五、在晶圆(2)背面粘贴蓝膜(9)，并撕除晶圆(2)正面的保护膜(6)。
2.根据权利要求1所述的基于水导激光加工技术的后减薄晶圆划片方法，其特征在于：步骤一中采用的水导激光发生装置(5)包括壳体、激光聚焦透镜(504)、激光窗口(505)和喷嘴(503)，在所述壳体内设有液压均衡腔(502)，且所述液压均衡腔(502)一侧设有激光窗口(505)，另一侧设有喷嘴(503)，在所述壳体上设有液体接口(501)与所述液压均衡腔(502)相通，激光聚焦透镜(504)设于所述壳体内且设于所述激光窗口(505)外侧，在所述喷嘴(503)外侧的壳体上设有射流口(506)。
3.根据权利要求1所述的基于水导激光加工技术的后减薄晶圆划片方法，其特征在于：步骤三的晶圆(2)磨削减薄过程中，先进行粗磨工序，再进行精磨工序，其中粗磨工序去除深度占总去除深度的80～90％，精磨工序去除深度占总去除深度的10～20％。
4.根据权利要求3所述的基于水导激光加工技术的后减薄晶圆划片方法，其特征在于：粗磨工序采用的陶瓷基金刚石砂轮磨粒粒度号为300～500#，细磨工序中采用的陶瓷基金刚石砂轮磨粒粒度号为6000～7000#。
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