CN113113298A - 一种晶圆背面金属沉积工艺 - Google Patents

一种晶圆背面金属沉积工艺 Download PDF

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CN113113298A
CN113113298A CN202110385120.8A CN202110385120A CN113113298A CN 113113298 A CN113113298 A CN 113113298A CN 202110385120 A CN202110385120 A CN 202110385120A CN 113113298 A CN113113298 A CN 113113298A
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严立巍
符德荣
李景贤
文锺
陈政勋
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Shaoxing Tongxincheng Integrated Circuit Co ltd
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Abstract

本发明公开一种晶圆背面金属沉积工艺，包括以下步骤：S1、通过钻石刀轮在晶圆正面对应切割道处开设SAW槽；S2、通过激光加蚀刻在SAW槽底部中间开设窄沟槽；S3、在晶圆正面涂装Dry F i lm；S4、将晶圆正面键合玻璃载板；S5、翻转玻璃载板，通过研磨蚀刻的方式将晶圆背面减薄至裸露出窄沟槽；S6、制作晶圆背面元件，通过蒸镀或溅镀于减薄后晶圆背面沉积金属镀层，沉积的金属镀层于窄沟槽处自动断开；S7、将完成金属沉积后的晶圆送至后续晶圆制程。本发明通过在晶圆正面开设不同宽度的SAW槽和窄沟槽，使金属沉积时金属层在窄沟槽内自动断开，在后续的晶粒切割时无需进行金属切割，可以有效防止因金属切割时变化的剪切应力使晶圆崩裂。

Description

一种晶圆背面金属沉积工艺
技术领域
本发明涉及半导体加工领域，具体的是一种晶圆背面金属沉积工艺。
背景技术
随着半导体行业的发展，为了满足电子器件微型化，多功能化和智能化的要求，对超薄晶圆的需求日益增长。特别是最近几年，超薄晶圆芯片已成为半导体工业的一种关键技术。它有助于开发诸如智能卡和视频识别(RFID)器件等技术，并已成为在最新型的移动电话、个人数字助理(PDA)和其他小型、轻便且功能强大的电子设备中日趋流行的堆栈式芯片封装的一种重要方法。
在超薄晶圆背面存在一层金属镀层，晶圆背金是连接前部芯片和后部装配的重要工艺，直接影响到后续的装配成品率、热阻等等，对器件的可靠性有着重要影响。目前在晶圆背金工艺中通常采用整面电镀，但是薄化到20-80μm的超薄晶圆在完成金属沉积工艺之后再进行晶圆的切割晶粒工序，于切割晶粒时，由于薄晶圆的翘曲性，加上晶圆已完成金属沉积，以外力切割时，切割时变化的剪切应力易使晶圆崩裂，晶粒无法重工而报废损毁。
发明内容
为解决上述背景技术中提到的不足，本发明的目的在于提供一种晶圆背面金属沉积工艺，通过在晶圆正面开设不同宽度的SAW槽和窄沟槽，使金属沉积时金属层在窄沟槽内自动断开。
本发明的目的可以通过以下技术方案实现：
一种晶圆背面金属沉积工艺，包括以下步骤：
S1、通过钻石刀轮在晶圆正面对应切割道处开设SAW槽；
S2、通过激光加蚀刻在SAW槽底部中间开设窄沟槽；
S3、在晶圆正面涂装Dry Film；
S4、将晶圆正面键合玻璃载板；
S5、翻转玻璃载板，通过研磨蚀刻的方式将晶圆背面减薄至裸露出窄沟槽；
S6、制作晶圆背面元件，通过蒸镀或溅镀于减薄后晶圆背面沉积金属镀层，沉积的金属镀层于窄沟槽处自动断开；
S7、将完成金属沉积后的晶圆送至后续晶圆制程。
进一步优选地，所述步骤S1中开设的SAW槽宽度为50-100μm，所述步骤S2中开设的窄沟槽宽度为10-50μm。
进一步优选地，所述步骤S2中开设窄沟槽的方法具体步骤为：
S201、采用飞秒激光扫描过SAW槽底部中间窄沟槽区域；
S202、运用蚀刻窄沟槽区域形成环形窄沟槽。
进一步优选地，其特征在于，所述SAW槽和窄沟槽的深度和介于减薄前后的晶圆厚度之间，所述SAW槽和窄沟槽深度比为1:1-2。
进一步优选地，所述步骤S6中沉积金属前完成黄光、蚀刻、粒子植入及高温回火制程。
进一步优选地，所述步骤S7中后续晶圆制程包括解键合玻璃载板及晶圆切割。
本发明的有益效果：
本发明通过在晶圆正面开设不同宽度的SAW槽和窄沟槽，晶圆背面减薄后裸露出窄沟槽再进行金属沉积，使金属沉积时金属层在窄沟槽内自动断开，在后续的晶粒切割时无需进行金属切割，可以有效防止因金属切割时变化的剪切应力使晶圆崩裂。
附图说明
下面结合附图对本发明作进一步的说明。
图1是本发明工艺步骤S1的成型示意图；
图2是本发明工艺步骤S2的成型示意图；
图3是本发明工艺步骤S3的成型示意图；
图4是本发明工艺步骤S4的成型示意图；
图5是本发明工艺步骤S5的成型示意图；
图6是本发明工艺步骤S6的成型示意图。
图中：
1-晶圆，2-SAW槽，3-窄沟槽，4-Dry film，5-玻璃载板，6-金属镀膜。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
在本发明的描述中，需要理解的是，术语“开孔”、“上”、“下”、“厚度”、“顶”、“中”、“长度”、“内”、“四周”等指示方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的组件或元件必须具有特定的方位，以特定的方位构造和操作，因此不能理解为对本发明的限制。
实施例1
一种晶圆背面金属沉积工艺，包括以下步骤：
S1、通过钻石刀轮在晶圆正面对应切割道处开设宽度为80μm深度为50μm的SAW槽；
S2、通过激光加蚀刻在SAW槽底部中间开设宽度为30μm，深度为70μm的窄沟槽；
S3、在晶圆正面涂装干膜；
S4、将晶圆正面键合玻璃载板；
S5、翻转玻璃载板，通过研磨蚀刻的方式将晶圆背面减薄至裸露出窄沟槽；
S6、完成完成黄光、蚀刻、粒子植入及高温回火制程，然后通过蒸镀或溅镀于减薄后晶圆背面沉积金属镀层，沉积的金属镀层于窄沟槽处自动断开；
S7、将完成金属沉积后的晶圆放在切割模框上解键合玻璃载板然后进行晶圆切割。
步骤S2中开设窄沟槽的方法具体步骤为：
S201、采用飞秒激光扫描过SAW槽底部中间窄沟槽区域；
S202、运用蚀刻窄沟槽区域形成环形窄沟槽。
实施例2
一种晶圆背面金属沉积工艺，包括以下步骤：
S1、通过钻石刀轮在晶圆正面对应切割道处开设宽度为60μm深度为40μm的SAW槽；
S2、通过激光加蚀刻在SAW槽底部中间开设宽度为20μm，深度为80μm的窄沟槽；
S3、在晶圆正面涂装干膜；
S4、将晶圆正面键合玻璃载板；
S5、翻转玻璃载板，通过研磨蚀刻的方式将晶圆背面减薄至裸露出窄沟槽；
S6、完成完成黄光、蚀刻、粒子植入及高温回火制程，然后通过蒸镀或溅镀于减薄后晶圆背面沉积金属镀层，沉积的金属镀层于窄沟槽处自动断开；
S7、将完成金属沉积后的晶圆放在切割模框上解键合玻璃载板然后进行晶圆切割。
步骤S2中开设窄沟槽的方法具体步骤为：
S201、采用飞秒激光扫描过SAW槽底部中间窄沟槽区域；
S202、运用蚀刻窄沟槽区域形成环形窄沟槽。
在本说明书的描述中，参考术语“一个实施例”、“示例”、“具体示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上显示和描述了本发明的基本原理、主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。

Claims (6)

1.一种晶圆背面金属沉积工艺，其特征在于，包括以下步骤：
S1、通过钻石刀轮在晶圆正面对应切割道处开设SAW槽；
S2、通过激光加蚀刻在SAW槽底部中间开设窄沟槽；
S3、在晶圆正面涂装Dry Film；
S4、将晶圆正面键合玻璃载板；
S5、翻转玻璃载板，通过研磨蚀刻的方式将晶圆背面减薄至裸露出窄沟槽；
S6、制作晶圆背面元件，通过蒸镀或溅镀于减薄后晶圆背面沉积金属镀层，沉积的金属镀层于窄沟槽处自动断开；
S7、将完成金属沉积后的晶圆送至后续晶圆制程。
2.根据权利要求1所述的晶圆背面金属沉积工艺，其特征在于，所述步骤S1中开设的SAW槽宽度为50-100μm，所述步骤S2中开设的窄沟槽宽度为10-50μm。
3.根据权利要求1所述的晶圆背面金属沉积工艺，其特征在于，所述步骤S2中开设窄沟槽的方法具体步骤为：
S201、采用飞秒激光扫描过SAW槽底部中间窄沟槽区域；
S202、运用蚀刻窄沟槽区域形成环形窄沟槽。
4.根据权利要求1所述的晶圆背面金属沉积工艺，其特征在于，所述SAW槽和窄沟槽的深度和介于减薄前后的晶圆厚度之间，所述SAW槽和窄沟槽深度比为1:1-2。
5.根据权利要求1所述的晶圆背面金属沉积工艺，其特征在于，所述步骤S6中沉积金属前完成黄光、蚀刻、粒子植入及高温回火制程。
6.根据权利要求1所述的晶圆背面金属沉积工艺，其特征在于，所述步骤S7中后续晶圆制程包括解键合玻璃载板及晶圆切割。
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