CN112500167A - 一种致密化碳化钛复合陶瓷的制备方法 - Google Patents
一种致密化碳化钛复合陶瓷的制备方法 Download PDFInfo
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- 239000002131 composite material Substances 0.000 title claims abstract description 43
- 239000000919 ceramic Substances 0.000 title claims abstract description 35
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 238000005245 sintering Methods 0.000 claims abstract description 40
- 239000000843 powder Substances 0.000 claims abstract description 28
- 239000010936 titanium Substances 0.000 claims abstract description 14
- 239000000654 additive Substances 0.000 claims abstract description 12
- 239000002994 raw material Substances 0.000 claims abstract description 11
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000000996 additive effect Effects 0.000 claims abstract description 10
- 239000002245 particle Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 22
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 239000011230 binding agent Substances 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 8
- 239000002002 slurry Substances 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000748 compression moulding Methods 0.000 claims description 6
- 238000005469 granulation Methods 0.000 claims description 6
- 230000003179 granulation Effects 0.000 claims description 6
- 238000007873 sieving Methods 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 239000005011 phenolic resin Substances 0.000 claims description 5
- 229920001568 phenolic resin Polymers 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 229910021389 graphene Inorganic materials 0.000 claims description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 4
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 4
- 239000006229 carbon black Substances 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052580 B4C Inorganic materials 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910003074 TiCl4 Inorganic materials 0.000 claims description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 2
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 claims description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000292 calcium oxide Substances 0.000 claims description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 2
- 239000007791 liquid phase Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 239000011159 matrix material Substances 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000000280 densification Methods 0.000 abstract description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000011065 in-situ storage Methods 0.000 abstract description 2
- 230000008707 rearrangement Effects 0.000 abstract description 2
- 229910052726 zirconium Inorganic materials 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- -1 sintering aids Substances 0.000 abstract 1
- 229910010293 ceramic material Inorganic materials 0.000 description 19
- 238000001035 drying Methods 0.000 description 15
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
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- 239000000463 material Substances 0.000 description 3
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- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- 238000011049 filling Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
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- 238000009776 industrial production Methods 0.000 description 1
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- 238000000465 moulding Methods 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000004537 pulping Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
本发明提供一种致密化碳化钛复合陶瓷的制备方法，所述复合陶瓷的原料中，TiC粉、添加剂、烧结助剂、钛源、C源的质量比为(30‑80):(0‑75):(0‑30):(0‑35):(0‑25)，在原料中，引入钛源、C源，通过原位反应，在碳化钛陶瓷基体中合成超细的碳化钛晶粒，提高了硼化锆的烧结活性，有利于致密化，相对密度95%以上；同时引入添加剂和烧结助剂，有利于形成液相，促进碳化钛颗粒之间重新排列，便于形成烧结颈，本发明制得的TiC复合陶瓷材料具有致密度高、高硬度、高韧性、低电阻率等性能，便于大规模自动化生产。
Description
技术领域
本发明属于陶瓷材料技术领域，具体涉及一种致密化碳化钛复合陶瓷的制备方法。
背景技术
碳化钛陶瓷具有强度高、导热良好、低电阻率、抗高温氧化、耐化学腐蚀等优良的特性，经常被用在切削刀具、耐磨部件、电接触部件、核聚变反应堆等领域。但是碳化钛属于超硬材料，难以烧结致密化。
目前，虽然使用热压、SPS、自蔓延等烧结方式可以获得致密化的碳化钛复合陶瓷；但是，采用热压烧结工艺，产品上下两面要承受很大的压力，产品的形状往往是板材或片材，形状简单不能复杂，所以形状受到限制；此外，由于产品受压的原因，每一批次烧结的产品数量也会受到限制。SPS和自蔓延烧结工艺，虽然对产品的形状没有要求，但是这两种烧结工艺限定了烧结炉内腔尺寸非常小，产量极其低下，目前只限于实验科研研究，也不适用于大批量工业化生产。
发明专利 CN102390999A公开一种液相烧结SiC-TiC复合陶瓷及其制备方法，由15～50wt%的碳化钛，40～80wt%的碳化硅，5～10wt%的助烧结剂Al2O3和Y2O3组成，经配料、制浆、成型、干燥、烧结而得到，SiC-TiC复合陶瓷的常温抗折强度提高到580Mpa，断裂韧性提高到7.8MPa·m1/2，但是，该方法制备的陶瓷致密度并不高。
发明专利 CN110330318A公开一种微纳复合陶瓷材料，以微米氧化铝为基体，以微米碳化钨和纳米碳化钛为第二相材料，以石墨烯为强韧化相，该种氧化铝-碳化钨-碳化钛-石墨烯微纳复合陶瓷材料，抗弯强度550.92±25.55MPa，硬度23.54±0.63GPa，断裂韧性8.76±0.51MPa·m 1/2，但是，其采用热压烧结工艺，样品虽然能获得较高的综合性能，但是样品的形状、尺寸和数量受到了极大的限制，不适用于规模化大批量生产。
发明内容
为解决现有技术存在的问题，对现有工艺进行进一步优化，本发明提供一种致密化碳化钛复合陶瓷的制备方法，以实现制备具有高致密度、形状可塑性强、便于大规模量产的碳化钛复合陶瓷的发明目的。
为解决以上技术问题，本发明采用以下技术方案：
一种致密化碳化钛复合陶瓷的制备方法，其特征在于，所述复合陶瓷的原料，包括TiC粉、添加剂、烧结助剂、钛源、C源，所述TiC粉、添加剂、烧结助剂、钛源、C源的质量比为(30-80):(0-75):(0-30):(0-35):(0-25)；
所述添加剂可以是碳化钨、碳化硅、碳化硼、氧化铝、氧化硅、氮化硅、氮化铝中的一种或几种；
所述TiC粉平均粒度为0.4~5μm，纯度大于96%；
所述C源可以是酚醛树脂、石墨粉、炭黑、石墨烯中的一种或几种；
所述钛源可以是Ti粉、TiCl4、TiO2粉、钛酸丁酯中的一种或几种；
所述烧结助剂可以是氧化钙、氧化镁、氧化钇、氧化铈、氧化镧中的一种或几种；
所述制备方法，包括以下步骤：
（1）将原料、结合剂与液体介质一起混合成浆料，在球磨罐中球磨；
（2）将混合浆料进行喷雾造粒或在40~100℃干燥箱中烘干后手工过筛造粒；
（3）将造粒粉放入模具中，经过模压成型制成陶瓷生坯；
（4）将压制好的陶瓷生坯放入100~250℃干燥箱中干燥；
（5）将生坯放入高温烧结中，1800~2150℃下反应烧结获得致密化TiC复合陶瓷材料；
所述原料、结合剂和液体介质的质量比为100:(20-150):(120-180)；
所述结合剂可以是酚醛树脂、PVA或PVB；
所述液体介质可以是水、丙酮或乙醇；
所述烧结，烧结气氛可以是真空、氩气、氢气中的一种或两种；
所述过筛造粒，筛网规格为40~100目；
所述模压成型，压力为100~250MPa。
本专利采用无压烧结工艺，样品不用加压，则样品的形状、尺寸和数量不受限制；且在原料中引入钛源和碳源，Ti+C=TiC，TiO2+3C=TiC+2CO，不仅提高的碳化钛的烧结活性，促进致密化，而且超细的碳化钛颗粒对陶瓷基体和形成的液相均有弥散强化作用，从而提高综合性能，使无压烧结工艺得到的综合性能与热压烧结的相近，适用于规模化大批量生产。
采用上述技术方案，本发明的有益效果为：
1、采用本发明致密化碳化钛复合陶瓷的制备方法，在原料中，引入钛源、C源，通过原位反应，在碳化钛陶瓷基体中合成超细的碳化钛晶粒，提高了硼化锆的烧结活性，有利于致密化，相对密度95-99%；
2、采用本发明致密化碳化钛复合陶瓷的制备方法，在原料中，引入添加剂和烧结助剂，有利于形成液相，促进碳化钛颗粒之间重新排列，便于形成烧结颈，从而降低了烧结温度，烧结温度在1850-2150℃；
3、采用本发明致密化碳化钛复合陶瓷的制备方法，提高了复合陶瓷的弯曲强度和断裂韧性，弯曲强度达到485-619MPa，断裂韧性达到4.73-8.12MPa·m1/2；
4、采用本发明致密化碳化钛复合陶瓷的制备方法，降低了碳化钛复合陶瓷的气孔率，气孔率为0.31-0.82%；同时维氏硬度达到19.50-26.09GPa；
5、采用本发明致密化碳化钛复合陶瓷的制备方法，碳化钛复合陶瓷材料的电阻率可达到4.07×10-6-6.44×10-5Ω·m；
6、本发明采用无压烧结工艺，可以制备出形状可塑的产品，工艺简单，对设备要求度低，便于大规模自动化生产，产品成本低且性能高，具有巨大的市场实用价值。
附图说明
图1为本发明实施例1中TiC-SiC复合陶瓷材料条状样品实物图。
图2为本发明实施例1中TiC-SiC复合陶瓷材料金相显微图。
图3为本发明实施例2中TiC-WC复合陶瓷材料条状样品实物图。
图4为本发明实施例2中TiC-WC复合陶瓷材料金相显微图。
图5为本发明实施例2中TiC-WC复合陶瓷材料SEM和EDS图。
图6为本发明实施例3中TiC-Al2O3复合陶瓷材料条状样品实物图。
图7为本发明实施例3中TiC-Al2O3复合陶瓷材料金相显微图。
具体实施方式：
下面结合具体的实施例，进一步阐述本发明。
实施例1
一种致密化碳化钛复合陶瓷的制备方法，步骤如下：
（1）将TiC粉、添加剂碳化硅和氧化铝、烧结助剂氧化钇、Ti粉、石墨烯按质量比50:65:4:10:3混合成混合粉料，将混合粉料、浓度为5%PVA溶液的结合剂、液体介质去离子水按质量比100:20:150一起混合成浆料，在球磨罐中球磨；
所述TiC粉，平均粒度为0.8μm，纯度99.9%；
所述碳化硅与氧化铝质量比为15:1；
（2）将混合浆料进行喷雾造粒；
（3）将造粒粉放入模具中，经压力机模压成型，压力150MPa，获得生坯；
（4）将压制好的陶瓷生坯放入150℃干燥箱中干燥排出体内水分；
（5）将生坯放入烧结中，在真空状态下，升温至1600℃保温30min，之后充氩气，达到烧结温度2150℃时，保温180min，获得TiC-SiC复合陶瓷材料；
本实施例制得的TiC-SiC复合陶瓷材料条状样品如图1所示，金相显微图如图2所示；经测试，该TiC-SiC复合陶瓷材料的相对密度为98.52%、气孔率为0.31%、弯曲强度为619MPa、断裂韧性为8.12MPa·m1/2、维氏硬度为26.09GPa、电阻率为6.44×10-5Ω·m。
实施例2
一种致密化碳化钛复合陶瓷的制备方法，步骤如下：
（1）按质量比，将TiC粉、添加剂碳化钨、烧结助剂氧化铈、氧化钛粉、石墨粉=65:10:5:35:12混合成混合粉料，将混合粉料、浓度为5%酚醛树脂溶液的结合剂、液体介质乙醇=100:30:180一起混合成浆料，在球磨罐中球磨；
所述TiC粉，平均粒度为0.5μm，纯度98.5%；
（2）将球磨后的浆料在80℃干燥箱中烘干后，手工研磨破碎粉末，并过100目筛造粒；
（3）将造粒粉放入模具中，经压力机模压成型，压力200MPa，获得生坯；
（4）将压制好的陶瓷生坯放入200℃干燥箱中干燥排出体内水分；
（5）将生坯放入烧结中，在真空状态下，升温至1550℃保温60min，达到烧结温度2050℃时，保温120min，获得TiC-WC复合陶瓷材料；
本实施例制得的TiC-WC复合陶瓷材料条状样品如图3所示，金相显微图如图4所示，SEM与EDS如图5所示；经测试，该TiC-WC复合陶瓷材料的相对密度为95.73%、气孔率为0.82%、弯曲强度为525MPa、断裂韧性为7.17MPa·m1/2、维氏硬度为25.78GPa、电阻率为4.07×10-6Ω·m。
实施例3
一种致密化碳化钛复合陶瓷的制备方法，步骤如下：
（1）按质量比，将TiC粉、添加剂氧化铝、烧结助剂氧化镁、氧化钛粉、炭黑=55:35:5:18:9混合成混合粉料，将混合粉料、浓度为5%PVB的结合剂、液体介质丙酮=100:150:120一起混合成浆料，在球磨罐中球磨；
所述TiC粉，平均粒度为1.0μm，纯度99%；
（2）将球磨后的浆料在100℃干燥箱中烘干后，手工研磨破碎粉末，并过80目筛造粒；
（3）将造粒粉放入模具中，经压力机模压成型，压力250MPa，获得生坯；
（4）将压制好的陶瓷生坯放入250℃干燥箱中干燥排出体内水分；
（5）将生坯放入烧结中，在氩气状态下，升温至1300℃保温60min，达到烧结温度1850℃时，保温90min，获得TiC-Al2O3复合陶瓷材料；
本实施例制得的TiC-Al2O3复合陶瓷材料条状样品如图6所示，金相显微图如图7所示；经测试，该TiC-Al2O3复合陶瓷材料的相对密度为97.14%、气孔率为0.72%、弯曲强度为485MPa、断裂韧性为4.37MPa·m1/2、维氏硬度为19.50GPa、电阻率为7.62×10-6Ω·m。
以上所述，仅为本发明的实施例，并非用以限定本发明的范围，本发明的上述实施例还可以做出各种变化。凡是依据本发明申请的权利要求书及说明书内容所作的简单、等效变化与修饰，皆落入本发明专利的权利要求保护范围。本发明未详尽描述的均为常规技术内容。
Claims (11)
1.一种致密化碳化钛复合陶瓷的制备方法，其特征在于，所述复合陶瓷的原料，包括TiC粉、添加剂、烧结助剂、钛源、C源，所述TiC粉、添加剂、烧结助剂、钛源、C源的质量比为(30-80):(0-75):(0-30):(0-35):(0-25)。
2.根据权利要求1所述的制备方法，其特征在于，所述添加剂可以是碳化钨、碳化硅、碳化硼、氧化铝、氧化硅、氮化硅、氮化铝中的一种或几种。
3.根据权利要求1所述的制备方法，其特征在于，所述TiC粉平均粒度为0.4-5μm，纯度大于96%。
4.根据权利要求1所述的制备方法，其特征在于，所述C源可以是酚醛树脂、石墨粉、炭黑、石墨烯中的一种或几种。
5.根据权利要求1所述的制备方法，其特征在于，所述钛源可以是Ti粉、TiCl4、TiO2粉、钛酸丁酯中的一种或几种。
6.根据权利要求1所述的制备方法，其特征在于，所述烧结助剂可以是氧化钙、氧化镁、氧化钇、氧化铈、氧化镧中的一种或几种。
7.根据权利要求1所述的制备方法，其特征在于，所述制备方法，包括将原料与结合剂和液体介质混合成浆料，所述原料、结合剂和液体介质的质量比为100:(20-150):(120-180)。
8.根据权利要求7所述的制备方法，其特征在于，所述结合剂可以是酚醛树脂、PVA或PVB；所述液体介质可以是水、丙酮或乙醇。
9.根据权利要求7所述的制备方法，其特征在于，所述制备方法，包括烧结，所述烧结，烧结气氛可以是真空、氩气、氢气中的一种或两种。
10.根据权利要求7所述的制备方法，其特征在于，所述制备方法，包括过筛造粒，所述过筛造粒，筛网规格为40-100目。
11.根据权利要求7所述的制备方法，其特征在于，所述制备方法，包括模压成型，所述模压成型，压力为100-250MPa。
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| CN115196966B (zh) * | 2021-04-12 | 2023-05-09 | 中国科学院上海硅酸盐研究所 | 一种温阻特性恒定的碳化硅复相陶瓷及其制备方法 |
| CN114292107A (zh) * | 2022-01-20 | 2022-04-08 | 山东东大新材料研究院有限公司 | 一种用于电火花线切割设备的陶瓷导电块及其制备方法 |
| CN115287516A (zh) * | 2022-07-22 | 2022-11-04 | 燕山大学 | 高熵陶瓷结合的wc硬质合金及其制备方法 |
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