CN112480912A - 一种钠铟基双钙钛矿纳米晶体材料及其制备和应用 - Google Patents
一种钠铟基双钙钛矿纳米晶体材料及其制备和应用 Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
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- 239000006228 supernatant Substances 0.000 claims abstract description 14
- 229910052792 caesium Inorganic materials 0.000 claims abstract description 12
- 239000000460 chlorine Substances 0.000 claims abstract description 11
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 11
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims abstract description 11
- 229910052709 silver Inorganic materials 0.000 claims abstract description 11
- 239000004332 silver Substances 0.000 claims abstract description 11
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- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 claims abstract description 9
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims abstract description 9
- 235000017281 sodium acetate Nutrition 0.000 claims abstract description 9
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- 239000002086 nanomaterial Substances 0.000 claims description 12
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 claims description 8
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- -1 silver ions Chemical class 0.000 claims description 3
- WFSGQBNCVASPMW-UHFFFAOYSA-N 2-ethylhexanoyl chloride Chemical compound CCCCC(CC)C(Cl)=O WFSGQBNCVASPMW-UHFFFAOYSA-N 0.000 claims description 2
- PASDCCFISLVPSO-UHFFFAOYSA-N benzoyl chloride Chemical compound ClC(=O)C1=CC=CC=C1 PASDCCFISLVPSO-UHFFFAOYSA-N 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 238000005401 electroluminescence Methods 0.000 claims description 2
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- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 229910001415 sodium ion Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 4
- 229910052738 indium Inorganic materials 0.000 claims 2
- 231100000419 toxicity Toxicity 0.000 abstract description 3
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
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Abstract
本发明公开了新型未掺杂和银掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料,其步骤包括将含铯化合物、醋酸钠、醋酸铟、醋酸银加入到烧瓶中,再加入1‑十八烯、油酸、油胺,搅拌混合,在100‑110℃抽真空1h;通氮气,4‑8℃/min升温到180‑185℃,在165‑170℃时注入含氯化合物,当温度到180℃时,迅速冰浴至室温,离心去除上清液,然后用甲苯洗2遍,离心去除上清液,再将沉淀分散到正己烷中,离心去除沉淀,得到纳米晶体胶体。本发明制备方法简单,解决了铅基钙钛矿的毒性问题,并通过银掺杂提高了钙钛矿纳米晶体的稳定性,同时改善其荧光性能,在光电领域具有良好的应用前景。
Description
技术领域
本发明属于发光二极管技术领域,具体涉及一种新型发光二极管纳米发光材料合成和应用。
背景技术
铅基钙钛矿纳米晶体材料具有良好的光电性质,已被用于制备发光二极管、太阳能电池和光电探测器等设备。但是,其毒性和不稳定性,严重制约了其大规模应用。因此,高效非铅钙钛矿纳米发光材料受到全世界科研工作者的广泛关注。
因此,为了环境友好和可持续发展,采用无毒或低毒的非铅元素代替铅,是钙钛矿材料发展的必然趋势。在非铅钙钛矿中,双钙钛矿由于其三维结构和好的稳定性,具有潜在的应用前景。但是,目前非铅全无机钠基双钙钛矿材料还没有被报道。
发明内容
本发明的目的在于提供新型未掺杂和银掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料及其制备方法,该材料制备简单,环保无毒,光电性能优异,有望用于发光二极管等光电器件。
新型未掺杂和银掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料,其特征在于,所述双钙钛矿纳米材料化学式为Cs2NaInCl6纳米晶体,所述银掺杂双钙钛矿纳米材料化学式为Cs2NaInCl6:Ag纳米晶体,该双钙钛矿纳米材料具有的面心立方结构。
所述未掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料的变温热注射制备方法如下:
按所需量将含铯化合物、醋酸钠、醋酸铟加入到50ml烧瓶中,再加入1-十八烯、油酸、油胺,搅拌混合,在100-115℃抽真空40min-90min;通氮气,4-8℃/min升温到170-190℃,在165±5℃时注入含氯化合物,当温度到170-190℃时,迅速冰浴,冷却至室温;9000±1500转/min离心5-30分钟去除上清液,然后用甲苯洗1-4遍,10000±500转/min离心10±6分钟去除上清液,再将沉淀分散到正己烷中,6000±1000转/min离心10±6分钟去除沉淀,得到Cs2NaInCl6纳米晶体胶体。
所述银掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料的变温热注射制备方法如下:
按所需量将含铯化合物、醋酸钠、醋酸铟、醋酸银加入到50ml烧瓶中,再加入1-十八烯、油酸、油胺,搅拌混合,在100-115℃抽真空40-90min;通氮气,4-8℃/min升温到175-195℃,在165±5℃时注入含氯化合物,当温度到175-195℃时,迅速冰浴,冷却至室温;9000±1500转/min离心5-30分钟去除上清液,然后用甲苯洗1-4遍,10000±500转/min离心10±6分钟去除上清液,再将沉淀分散到正己烷中,6000±1000转/min离心10±6分钟去除沉淀,得到Cs2NaInCl6:Ag纳米晶体胶体。
制备过程中所用的反应温度是梯度变温的过程,及变温热注射过程。
制备过程中所用的含铯化合物为醋酸铯或油酸铯中的一种。
制备过程中所用的含氯化合物为三甲基氯硅烷、苯甲酰氯或2-乙基己酰氯中的一种。
制备过程中:每合成0.5mmol Cs2NaInCl6或Cs2NaInCl6:Ag纳米晶体需要10ml 1-十八烯,2.9ml油酸,0.65ml油胺。
所述的未掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料的应用,其特点在于该纳米材料的边长为12.5±5nm,光学带隙在4.25eV,可作为光敏材料适合用于紫外光电探测器中。
所述的银掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料的应用,其特点在于该纳米材料的边长为9.7±5nm,光学带隙在4.25eV,可作为光敏材料适合用于紫外光电探测器中。
所述的银掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料的应用,其特点在于银离子可能取代钠离子或铟离子的位置,也可能在晶格的间隙中。
所述的银掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料的应用,其特点在于银的掺杂量是大于0%,小于等于5%。
所述的银掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料的应用,其特点在于该材料在室温下有很强的黄色荧光,荧光峰很宽,覆盖了整个可见光区,峰中心位置在540nm,可作为黄色荧光粉,适合用于黄光二极管的荧光层,或与蓝光材料组成暖白光发光二极管。
所述的银掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料的应用,其特点在于该材料的荧光量子产率高达31.1%,可作为发光材料用于发光二极管中电致发光。
所述的银掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料,该材料可以在25℃、55%相对湿度和0.6个太阳光照下稳定均超过1个月。
有益效果:本发明提供了新型未掺杂和银掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料及其变温热注射合成方法,少量的银元素掺杂,使得制备的三维银掺杂非铅全无机钠铟基双钙钛矿纳米晶体具有很强的黄色荧光,以及优异的稳定性,具有很好的光电应用前景。
发明制备方法简单,解决了铅基钙钛矿的毒性问题,并通过银掺杂提高了钙钛矿纳米晶体的稳定性,同时改善其荧光性能,在光电领域具有良好的应用前景。
附图说明
图1为本发明未掺杂和银掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料的粉末XRD衍射谱图。
图2为本发明未掺杂(图2a)和银掺杂(图2b)非铅全无机钠铟基双钙钛矿纳米晶体材料的透射电子显微镜(TEM)图片。
图3为本发明未掺杂和银掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料的紫外-可见吸收光谱及室温稳态荧光光谱。
图4为本发明四种不同银掺杂比例的非铅全无机钠铟基双钙钛矿纳米晶体材料在254纳米紫外灯下的荧光图片。
具体实施方式
下面结合附图及具体的实施案例对本发明做进一步描述:
实施例1
将115.2mg醋酸铯、36.9mg醋酸钠和146.0mg醋酸铟加入到50ml烧瓶中,再加入10ml1-十八烯,2.9ml油酸,0.65ml油胺,搅拌混合,在105℃抽真空1h;通氮气,6℃/min升温到180℃,在165℃时注入0.4ml三甲基氯硅烷,当温度到180℃时,迅速冰浴,冷却至室温,9000±1000转/min离心10分钟去除上清液,然后用甲苯洗2遍,10000转/min离心5分钟去除上清液,再将沉淀分散到正己烷中,5000转/min离心5分钟去除沉淀,得到平均边长约为12.5nm的Cs2NaInCl6纳米晶体胶体。
经粉末XRD衍射测试,如图1所示,获得的未掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料结晶度高,是单一的纯相,具有明显的面心立方结构。
实施列2
将115.2mg醋酸铯、35.1mg醋酸钠、146.0mg醋酸铟和3.8mg醋酸银加入到50ml烧瓶中,再加入10ml1-十八烯,2.9ml油酸,0.65ml油胺,搅拌混合,在105℃抽真空1h;通氮气,6℃/min升温到185℃,在170℃时注入0.4ml三甲基氯硅烷,当温度到185℃时,迅速冰浴,冷却至室温,9000±1000转/min离心10分钟去除上清液,然后用甲苯洗2遍,10000转/min离心5分钟去除上清液,再将沉淀分散到正己烷中,5000转/min离心5分钟去除沉淀,得到边长约为9.7nm的Cs2NaInCl6:Ag纳米晶体胶体。
经粉末XRD衍射测试,如图1所示,获得的银掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料结晶度高,是单一的纯相,具有明显的面心立方结构。
经透射电子显微镜测试,如图2所示,获得的未掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料粒径分布均匀,边长约为12.5纳米;获得的银掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料粒径分布均匀,边长约为9.7纳米。
经紫外-可见吸收测试和稳态荧光测试,如图3所示,获得的银掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料在可见光范围内具有较宽的荧光发射光谱。如图4所示,四种不同银掺杂比例的非铅全无机钠铟基双钙钛矿纳米晶体材料在254纳米紫外灯下的荧光图片。
以上所述的实施例只是本发明的较佳方案,仅用于说明本发明而不用于限制本发明的范围,凡采用等同替换或等效变换的方式所获得的技术方案,均落在本发明的保护范围内。
Claims (10)
1.一种钠铟基双钙钛矿纳米晶体材料,包括未掺杂或银掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料,其特征在于,所述未掺杂双钙钛矿纳米材料化学式为Cs2NaInCl6纳米晶体,所述银掺杂双钙钛矿纳米材料化学式为Cs2NaInCl6:Ag纳米晶体;该未掺杂或银掺杂钠铟基双钙钛矿纳米材料具有的面心立方结构。
2.根据权利要求1所述钠铟基双钙钛矿纳米晶体材料,其特征在于:
未掺杂钠铟基双钙钛矿纳米晶体材料的边长为12.5±5nm;
银掺杂钠铟基双钙钛矿纳米晶体材料的边长为9.7±5nm;
银掺杂双钙钛矿纳米材料中银的摩尔含量(Ag/(Ag+Na))为大于0到小于等于5%,优选1±0.5%。
3.一种权利要求1或2所述的双钙钛矿纳米晶体材料的制备方法,其特征在于,未掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料按照以下步骤进行:
(一)按所需量将含铯化合物、醋酸钠、醋酸铟加入到反应容器中,再加入1-十八烯、油酸、油胺,搅拌混合,在100-115℃抽真空40-90min;
(二)通氮气,从室温按4-8℃/min升温到170-190℃,在165±5℃时注入含氯化合物,当温度到170-190℃时,反应容器置于冰浴降温,冷却至室温;
(三)9000±1500转/min离心5-30分钟去除上清液,然后沉淀用甲苯洗1-4遍,10000±500转/min离心10±6分钟去除上清液,再将沉淀分散到正己烷中,6000±1000转/min离心10±6分钟去除沉淀,得到Cs2NaInCl6纳米晶体胶体;
或,银掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料按照以下步骤进行:
(一)按所需量将含铯化合物、醋酸钠、醋酸铟、醋酸银加入到反应容器中,再加入1-十八烯、油酸、油胺,搅拌混合,在100-115℃抽真空40-90min;
(二)通氮气,从室温按4-8℃/min升温到175-195℃,在165±5℃时注入含氯化合物,当温度到175-195℃时,反应容器置于冰浴降温,冷却至室温;
(三)9000±1500转/min离心5-30分钟去除上清液,然后沉淀用甲苯洗1-4遍,10000±500转/min离心10±6分钟去除上清液,再将沉淀分散到正己烷中,6000±1000转/min离心10±6分钟去除沉淀,得到Cs2NaInCl6:Ag纳米晶体胶体。
4.根据权利要求3所述的制备方法,其特征在于:制备过程中所用的含铯化合物为醋酸铯或油酸铯中的一种或二种以上。
5.根据权利要求3所述的制备方法,其特征在于:制备过程中所用的含氯化合物为三甲基氯硅烷、苯甲酰氯或2-乙基己酰氯中的一种或二种以上。
6.根据权利要求3所述的制备方法,其特征在于:制备过程中,每合成0.5mmolCs2NaInCl6或Cs2NaInCl6:Ag纳米晶体需要12±3ml 1-十八烯,3±0.2ml油酸,0.8±0.2ml油胺。
7.根据权利要求3-6任一所述的制备方法,其特征在于:
未掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料制备过程中制备过程中,含铯化合物、醋酸钠、醋酸铟、含氯化合物按Cs、Na、In、Cl计的摩尔用量比为(1-1.6):(0.8-1):1:(8-12)。
银掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料制备过程中,含铯化合物、醋酸钠、醋酸铟、醋酸银、含氯化合物按Cs、(Na+Ag)、In、Cl计的摩尔用量比为(1-1.6):(0.8-1):1:(8-12),Ag/(Na+Ag)≤0.1。
8.根据权利要求1或2所述的钠铟基双钙钛矿纳米晶体材料的应用,其特征在于:未掺杂非铅全无机钠铟基双钙钛矿纳米材料的边长为12.5±5nm,光学带隙在4.25eV,可作为光敏材料适合用于紫外光电探测器中;
或,银掺杂非铅全无机钠铟基双钙钛矿纳米材料的粒径为9.7±5nm,光学带隙在4.25eV,可作为光敏材料适合用于紫外光电探测器中。
9.根据权利要求1或2所述的钠铟基双钙钛矿纳米晶体材料的应用,其特征在于:银掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料,银离子可能取代钠离子或铟离子的位置,也可能在晶格的间隙中;
其中银的掺杂量是大于0%,小于等于5%,且实际掺杂量小于等于投料比,优选范围1±0.5%。
10.根据权利要求1或2所述的钠铟基双钙钛矿纳米晶体材料的应用,其特征在于:银掺杂非铅全无机钠铟基双钙钛矿纳米晶体材料在室温下有很强的黄色荧光,荧光峰很宽(400-750nm),覆盖了整个可见光区,峰中心位置在540nm,可作为黄色荧光粉,适合用于黄光二极管的荧光层,或与蓝光材料组成暖白光发光二极管;
或者,该材料的荧光量子产率高达31.1%,可作为发光材料用于发光二极管中电致发光。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107299393A (zh) * | 2017-06-08 | 2017-10-27 | 华中科技大学 | 一种多元钙钛矿材料及其制备与应用 |
CN108659827A (zh) * | 2018-06-15 | 2018-10-16 | 华中科技大学 | 近紫外激发的双钙钛矿单基质白光荧光材料及制备与应用 |
CN109054814A (zh) * | 2018-09-10 | 2018-12-21 | 华中科技大学 | 一种紫外激发白光多元非铅钙钛矿荧光粉及其制备方法 |
CN109830550A (zh) * | 2019-01-16 | 2019-05-31 | 暨南大学 | 一种无铅双钙钛矿单晶的紫外光探测器及其制备方法 |
-
2019
- 2019-09-11 CN CN201910858015.4A patent/CN112480912A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107299393A (zh) * | 2017-06-08 | 2017-10-27 | 华中科技大学 | 一种多元钙钛矿材料及其制备与应用 |
CN108659827A (zh) * | 2018-06-15 | 2018-10-16 | 华中科技大学 | 近紫外激发的双钙钛矿单基质白光荧光材料及制备与应用 |
CN109054814A (zh) * | 2018-09-10 | 2018-12-21 | 华中科技大学 | 一种紫外激发白光多元非铅钙钛矿荧光粉及其制备方法 |
CN109830550A (zh) * | 2019-01-16 | 2019-05-31 | 暨南大学 | 一种无铅双钙钛矿单晶的紫外光探测器及其制备方法 |
Non-Patent Citations (1)
Title |
---|
PEIGENG HAN等: "Size effect of lead-free halide double perovskite on luminescence property", 《SCIENCE CHINA CHEMISTRY》 * |
Cited By (14)
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