CN112449725A - 电容器及其制作方法 - Google Patents
电容器及其制作方法 Download PDFInfo
- Publication number
- CN112449725A CN112449725A CN201980001219.4A CN201980001219A CN112449725A CN 112449725 A CN112449725 A CN 112449725A CN 201980001219 A CN201980001219 A CN 201980001219A CN 112449725 A CN112449725 A CN 112449725A
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- CN
- China
- Prior art keywords
- layer
- conductive layer
- conductive
- substrate
- trench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 186
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 310
- 239000004065 semiconductor Substances 0.000 claims abstract description 150
- 238000000034 method Methods 0.000 claims description 60
- 239000000463 material Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 18
- 239000011810 insulating material Substances 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 239000010948 rhodium Substances 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 229910052703 rhodium Inorganic materials 0.000 claims description 5
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 229910021332 silicide Inorganic materials 0.000 claims description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- VQYPKWOGIPDGPN-UHFFFAOYSA-N [C].[Ta] Chemical compound [C].[Ta] VQYPKWOGIPDGPN-UHFFFAOYSA-N 0.000 claims description 4
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 229920001940 conductive polymer Polymers 0.000 claims description 4
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 739
- 239000004020 conductor Substances 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 239000005380 borophosphosilicate glass Substances 0.000 description 5
- 239000005388 borosilicate glass Substances 0.000 description 5
- 239000005360 phosphosilicate glass Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 238000010292 electrical insulation Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- -1 aluminum (Al) Chemical compound 0.000 description 3
- 238000000708 deep reactive-ion etching Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 229910002244 LaAlO3 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229910000167 hafnon Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
本申请实施例提供一种电容器及其制作方法，电容器包括：半导体衬底，包括至少一个衬底沟槽组；至少一个叠层结构，每个叠层结构包括n层导电层和m层电介质层，n层导电层中的第一层导电层设置于半导体衬底上方和衬底沟槽组内，n层导电层中的第i层导电层形成有第i导电层沟槽组，n层导电层中的第i+1层导电层设置于第i层导电层的上方和第i导电层沟槽组内，m、n、i为正整数，且n≥2，1≤i≤n‑1；至少一个第一外接电极，电连接至n层导电层中的一部分导电层；至少一个第二外接电极，电连接至n层导电层中的另一部分导电层，一部分导电层中的每层导电层在叠层结构中相邻的导电层包括有另一部分导电层中的至少一个导电层。
Description
PCT国内申请，说明书已公开。
Claims (49)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/094619 WO2021000304A1 (zh) | 2019-07-03 | 2019-07-03 | 电容器及其制作方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112449725A true CN112449725A (zh) | 2021-03-05 |
| CN112449725B CN112449725B (zh) | 2023-01-20 |
Family
ID=74066128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980001219.4A Active CN112449725B (zh) | 2019-07-03 | 2019-07-03 | 电容器及其制作方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11362171B2 (zh) |
| EP (1) | EP3783647B1 (zh) |
| CN (1) | CN112449725B (zh) |
| WO (1) | WO2021000304A1 (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3680934A1 (en) * | 2019-01-08 | 2020-07-15 | Murata Manufacturing Co., Ltd. | Rc architectures, and methods of fabrication thereof |
| US11854959B2 (en) * | 2021-03-26 | 2023-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal-insulator-metal device with improved performance |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709311A (zh) * | 2011-02-17 | 2012-10-03 | 美士美积体产品公司 | 带有具有压缩应力的保形沉积导电层的深沟槽电容器 |
| CN103208415A (zh) * | 2013-03-22 | 2013-07-17 | 上海宏力半导体制造有限公司 | 电容及其形成方法 |
| US20140145299A1 (en) * | 2012-11-26 | 2014-05-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deep trench structure for high density capacitor |
| CN108735719A (zh) * | 2017-04-25 | 2018-11-02 | 三星电机株式会社 | 电容器及制造该电容器的方法 |
| CN108962880A (zh) * | 2018-07-17 | 2018-12-07 | 昆山晔芯电子科技有限公司 | 一种高密度多层堆叠mim电容器及像素电路与成像装置 |
| CN109103188A (zh) * | 2017-06-20 | 2018-12-28 | 台湾积体电路制造股份有限公司 | 用以形成半导体装置的方法 |
| CN109427753A (zh) * | 2017-09-01 | 2019-03-05 | 台湾积体电路制造股份有限公司 | 电容结构、包括电容结构的半导体管芯及其形成方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6570477B2 (en) * | 2000-05-09 | 2003-05-27 | Innochips Technology | Low inductance multilayer chip and method for fabricating same |
| US9978829B2 (en) * | 2012-11-26 | 2018-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Low impedance high density deep trench capacitor |
| EP2924730A1 (en) * | 2014-03-25 | 2015-09-30 | Ipdia | Capacitor structure |
| CN107204331B (zh) * | 2017-07-07 | 2019-08-23 | 上海华虹宏力半导体制造有限公司 | 多层电容器的制造方法 |
-
2019
- 2019-07-03 EP EP19920625.1A patent/EP3783647B1/en active Active
- 2019-07-03 CN CN201980001219.4A patent/CN112449725B/zh active Active
- 2019-07-03 WO PCT/CN2019/094619 patent/WO2021000304A1/zh unknown
-
2020
- 2020-09-21 US US17/027,184 patent/US11362171B2/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709311A (zh) * | 2011-02-17 | 2012-10-03 | 美士美积体产品公司 | 带有具有压缩应力的保形沉积导电层的深沟槽电容器 |
| US20140145299A1 (en) * | 2012-11-26 | 2014-05-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deep trench structure for high density capacitor |
| CN103208415A (zh) * | 2013-03-22 | 2013-07-17 | 上海宏力半导体制造有限公司 | 电容及其形成方法 |
| CN108735719A (zh) * | 2017-04-25 | 2018-11-02 | 三星电机株式会社 | 电容器及制造该电容器的方法 |
| CN109103188A (zh) * | 2017-06-20 | 2018-12-28 | 台湾积体电路制造股份有限公司 | 用以形成半导体装置的方法 |
| CN109427753A (zh) * | 2017-09-01 | 2019-03-05 | 台湾积体电路制造股份有限公司 | 电容结构、包括电容结构的半导体管芯及其形成方法 |
| CN108962880A (zh) * | 2018-07-17 | 2018-12-07 | 昆山晔芯电子科技有限公司 | 一种高密度多层堆叠mim电容器及像素电路与成像装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3783647B1 (en) | 2022-05-25 |
| CN112449725B (zh) | 2023-01-20 |
| WO2021000304A1 (zh) | 2021-01-07 |
| US11362171B2 (en) | 2022-06-14 |
| EP3783647A1 (en) | 2021-02-24 |
| US20210005707A1 (en) | 2021-01-07 |
| EP3783647A4 (en) | 2021-06-30 |
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