CN112447654A - 电子封装件及其制法 - Google Patents

电子封装件及其制法 Download PDF

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Publication number
CN112447654A
CN112447654A CN201910856970.4A CN201910856970A CN112447654A CN 112447654 A CN112447654 A CN 112447654A CN 201910856970 A CN201910856970 A CN 201910856970A CN 112447654 A CN112447654 A CN 112447654A
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conductive
electronic
optical communication
layer
communication element
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CN201910856970.4A
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黄公敦
廖怡茜
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Siliconware Precision Industries Co Ltd
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Siliconware Precision Industries Co Ltd
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Abstract

本发明涉及一种电子封装件及其制法，一种电子封装件的制法经由包覆层包覆第一电子元件与多个导电柱，且该包覆层定义有相邻接的一保留区及一移除区，再形成线路结构在该包覆层上，之后移除该移除区及其上的线路结构，以在后续设置光通讯元件在该线路结构上时，令该光通讯元件能有效凸出该包覆层的侧面，避免后续制程用的封装材附着在该光通讯元件的凸出部分。本发明还提供该电子封装件。

Description

电子封装件及其制法
技术领域
本发明有关一种半导体封装技术，特别是一种电子封装件及其制法。
背景技术
随着电子产业的蓬勃发展，电子产品也逐渐迈向多功能、高性能的趋势。为了满足电子封装件微型化(miniaturization)的封装需求，发展出晶圆级封装(Wafer LevelPackaging，简称WLP)技术。
图1A至1E为现有采用晶圆级封装技术的半导体封装件1的制法的剖面示意图。
如图1A所示，形成一热化离形胶层(thermal release layer)100在一承载件10上。
接着，置放多个通讯芯片11在该热化离形胶层100上，所述通讯芯片11具有相对的作用面11a与非作用面11b，各该作用面11a上具有多个电极垫110，且各该通讯芯片11以其作用面11a粘着在该热化离形胶层100上。
如图1B所示，形成一封装胶体14在该热化离形胶层100上，以包覆所述通讯芯片11。
如图1C所示，以烘烤方式以硬化该热化离形胶层100，进而移除该热化离形胶层100与该承载件10，以外露出所述通讯芯片11的作用面11a。
如图1D所示，形成一线路结构16在该封装胶体14与所述通讯芯片11的作用面11a上，令该线路结构16电性连接该电极垫110。接着，形成一绝缘保护层18在该线路结构16上，且该绝缘保护层18外露该线路结构16的部分表面，以供结合如焊球的导电元件17。
如图1E所示，沿如图1D所示的切割路径L进行切单制程，以获取多个个半导体封装件1。
但是，现有半导体封装件1的制法中，若将该半导体封装件1应用在网通交换器时，由在该通讯芯片11对外界环境应力具有高敏感性，若进行研磨制程时，研磨作用力会影响该通讯芯片11的传输功能，导致该半导体封装件1不良。
另随着数据网络按比例缩放以满足不断增加的频宽要求，铜数据通道(如该线路结构16的线路)的缺点越来越明显，例如，因所述通讯芯片11之间的辐射电磁能量而引起的信号衰减及串扰。
此外，业界虽可经由均衡、编码及屏蔽等设计减轻信号衰减及串扰的状况，但所述设计需相当大的功率、复杂度及电缆容积损失，且仅仅改善局部区域的适用度及有限的可缩放性。
因此，如何克服现有技术的种种缺点，实为目前各界亟欲解决的技术问题。
发明内容
鉴于上述现有技术的缺陷，本发明提供一种电子封装件及其制法，其经由包覆层设计有移除区的设计，以避免研磨制程或封装材影响光通讯元件的功能。
本发明的电子封装件包括：包覆层，其具有相对的第一表面与第二表面及邻接该第一与第二表面的侧面；第一电子元件，其嵌埋在该包覆层中；多个导电柱，其嵌埋在该包覆层中；线路结构，其形成在该包覆层的第一表面上且电性连接该导电柱与该第一电子元件；以及光通讯元件，其设在该线路结构上且电性连接该线路结构，其中，该光通讯元件具有光电部及雷射部。
前述的电子封装件中，还包括线路部，其形成在该包覆层的第二表面上且电性连接该导电柱。
本发明还提供一种电子封装件的制法，其包括：经由包覆层包覆第一电子元件与多个导电柱，其中，该包覆层具有相对的第一表面与第二表面，且定义有相邻接的一保留区及一移除区，该保留区包含有该第一电子元件及部分该导电柱，该移除区包含有部分该导电柱；形成线路结构在该包覆层的第一表面上，且令该线路结构电性连接该导电柱与该第一电子元件；形成线路部在该包覆层的第二表面上，且令该线路部电性连接该导电柱；移除该移除区及其上的线路结构与线路部，使该包覆层形成有邻接该第一与第二表面的侧面；以及设置光通讯元件在该线路结构上，且令该光通讯元件电性连接该线路结构，其中，该光通讯元件具有光电部及雷射部。
前述的制法中，该多个导电柱在移除该移除区前环绕该第一电子元件。
前述的电子封装件及其制法中，该第一电子元件结合及电性连接多个导电体。
前述的电子封装件及其制法中，该光电部将光信号转换为电信号，而该雷射部将该电信号转换为另一光信号并发射该另一光信号。例如，该光通讯元件经由多个导电凸块电性连接该线路结构，且该多个导电凸块位在该雷射部外。进一步，还包括以封装材包覆该多个导电凸块，且该封装材未形成在该雷射部上。
前述的电子封装件及其制法中，该光通讯元件凸出该包覆层的侧面，以作为连接段。
前述的电子封装件及其制法中，还包括形成多个导电元件在该线路部上。
前述的电子封装件及其制法中，还包括设置承载结构在该包覆层的第二表面上。例如，还包括设置第二电子元件在该承载结构上。
由上可知，本发明的电子封装件及其制法，主要经由先形成该包覆层，再设置该光通讯元件，以避免研磨制程影响该光通讯元件，且经由移除该移除区及其上的线路结构与线路部，使该光通讯元件能有效凸出该包覆层的侧面，因而能避免后续制程用的封装材附着在该连接段，所以该封装材不会影响该连接段的光信号传输。
另外，经由将该光电部与该雷射部整合为单一光通讯元件，以避免因该光电部与该雷射部分开配置时两者之间的辐射电磁能量而引起的信号衰减及串扰等问题，且能改善该电子封装件整体的适用度及可缩放性。
附图说明
图1A至1E为现有半导体封装件的制法的剖面示意图；
图2A至2F为本发明的电子封装件的制法的剖面示意图；
图2A’为图2A的局部上视示意图；
图2F’为图2F的局部横剖面下视示意图；以及
图3为本发明的电子封装件的另一实施例的剖面示意图。
附图标记说明
1 半导体封装件 10 承载件
100 热化离形胶层 11 通讯芯片
11a,21a 作用面 11b,21b 非作用面
110,210 电极垫 14 封装胶体
16,20 线路结构 17,24 导电元件
18 绝缘保护层 2,3 电子封装件
200,91 绝缘层 201 线路重布层
202 电性接触垫 21 第一电子元件
211 保护膜 212 结合层
22 导电体 22a 端面
23 导电柱 23a,23b 端面
240 线路部 25 包覆层
25a 第一表面 25b 第二表面
25c 侧面 26 光通讯元件
26a 光电部 26b 雷射部
260 连接段 27,320,330 导电凸块
270 凸块底下金属层 29 封装材
30 承载结构 30a 上表面
30b 下表面 300 外接垫
31 底胶 32 第二电子元件
33 第三电子元件 34 散热件
340 散热体 341 支撑脚
35 散热层 36 粘着层
9 承载板 9b 金属层
90 离型层 A 保留区
C 移除区 L 切割路径。
具体实施方式
以下经由特定的具体实施例说明本发明的实施方式，本领域技术人员可由本说明书所揭示的内容轻易地了解本发明的其他优点及功效。
须知，本说明书附图所绘示的结构、比例、大小等，均仅用在配合说明书所揭示的内容，以供本领域技术人员的了解与阅读，并非用在限定本发明可实施的限定条件，故不具技术上的实质意义，任何结构的修饰、比例关系的改变或大小的调整，在不影响本发明所能产生的功效及所能达成的目的下，均应仍落在本发明所揭示的技术内容得能涵盖的范围内。同时，本说明书中所引用的如“上”、“下”、“第一”、“第二”及“一”等用语，也仅为便在叙述的明了，而非用在限定本发明可实施的范围，其相对关系的改变或调整，在无实质变更技术内容下，当也视为本发明可实施的范畴。
图2A至2F为本发明的电子封装件2的制法的剖面示意图。
如图2A所示，在一承载板9上形成多个导电柱23，且设置至少一第一电子元件21在该承载板9上，其中，该第一电子元件21上结合并电性连接多个导电体22。
在本实施例中，该承载板9例如为半导体材料(如硅或玻璃)的板体，其上以例如涂布方式依序形成有一离型层90、如钛/铜的金属层9b与一如介电材或防焊材的绝缘层91，以供该导电柱23设在该绝缘层91上。
另外，形成该导电柱23的材料为如铜的金属材或焊锡材，且该导电体22为如导电线路、焊球的圆球状、或如铜柱、焊锡凸块等金属材的柱状、或焊线机制作的钉状(stud)导电件，但不限于此。
又，该第一电子元件21为主动元件、被动元件或其二者组合，且该主动元件例如为半导体芯片，而该被动元件例如为电阻、电容及电感。在本实施例中，该第一电子元件21为作用驱动器(Driver)的半导体芯片，其具有相对的作用面21a与非作用面21b，该第一电子元件21以其非作用面21b经由一结合层212粘固在该绝缘层91上，而该作用面21a具有多个电极垫210与一如钝化材的保护膜211，且该导电体22位在该保护膜211中。
另外，该多个导电柱23环绕该第一电子元件21，如图2A’所示。
如图2B所示，形成一包覆层25在该承载板9的绝缘层91上，以令该包覆层25包覆该第一电子元件21、所述导电体22与所述导电柱23，其中，该包覆层25具有相对的第一表面25a与第二表面25b，该包覆层25以其第二表面25b结合至该承载板9的绝缘层91上，且令该保护膜211、该导电体22的端面22a与该导电柱23的端面23a外露在该包覆层25的第一表面25a。
在本实施例中，该包覆层25定义有相邻接的一保留区A及一移除区C，且该保留区A包含有该第一电子元件21及部分导电柱23，而该移除区C包含有部分导电柱23。
另外，该包覆层25为绝缘材，如聚酰亚胺(polyimide，简称PI)、干膜(dry film)、如环氧树脂(epoxy)的封装胶体或封装材(molding compound)。例如，该包覆层25的制程可选择液态封胶(liquid compound)、喷涂(injection)、压合(lamination)或模压(compression molding)等方式形成在该绝缘层91上。
又，经由整平制程，使该包覆层25的第一表面25a齐平该保护膜211、该导电柱23的端面23a与该导电体22的端面22a，以令该导电柱23的端面23a与该导电体22的端面22a外露在该包覆层25的第一表面25a。例如，该整平制程经由研磨方式，移除该保护膜211的部分材料、该导电柱23的部分材料、该导电体22的部分材料与该包覆层25的部分材料。
另外，所述导电柱23的另一端面23b也齐平该包覆层25的第二表面25b。
如图2C所示，形成一线路结构20在该包覆层25的第一表面25a上，且令该线路结构20电性连接该导电柱23与该导电体22。
在本实施例中，该线路结构20包括多个绝缘层200及设在该绝缘层200上的多个线路重布层(redistribution layer，简称RDL)201，最外层的绝缘层200可作为防焊层，且令最外层的线路重布层201外露在该防焊层，以供作为电性接触垫202。或者，该线路结构20也可仅包括单一绝缘层200及单一线路重布层201。
另外，形成该线路重布层201的材料为铜，且形成该绝缘层200的材料为如聚对二唑苯(Polybenzoxazole，简称PBO)、聚酰亚胺(PI)、预浸材(Prepreg，简称PP)等的介电材、或如绿漆、油墨等的防焊材。
如图2D所示，移除该承载板9及其上的离型层90与金属层9b，并保留该绝缘层91，再形成一线路部240在该绝缘层91上以电性连接该导电柱23。
在本实施例中，该绝缘层91经由雷射方式形成有多个开孔，以令所述导电柱23的端面23b及该包覆层25的部分第二表面25b外露在所述开孔，以供结合该线路部240。例如，该线路部240为凸块底下金属层(UBM)，以在后续制程结合如多个焊锡凸块或焊球的导电元件；或者，可经由RDL制程形成线路部在该绝缘层91上，以在后续制程结合该导电元件或UBM。应可理解地，有关线路部240的态样种类繁多，并无特别限制。
另外，经由提供具有绝缘层91的承载板9，以在移除该承载板9后，可利用该绝缘层91形成该线路部240，因而无需再布设介电层，所以能节省制程时间与制程步骤，以达到降低制程成本的目的。
如图2E所示，移除该移除区C及其上的线路结构20、绝缘层91与线路部240，使该包覆层25形成有邻接该第一表面与第二表面的侧面25c。
如图2F所示，设置至少一光通讯元件26在该线路结构20上，以令该光通讯元件26凸出该包覆层25的侧面25c，其中，该光通讯元件26的凸出部分作为连接段260，以连接具有排线的汇流排(如光纤)，且在该线路部240上结合如多个焊锡凸块或焊球的导电元件24。
在本实施例中，该光通讯元件26为多功能整合式芯片，其具有如光电二极体(Photo Diode)的光电部26a，以将光信号转换为电信号，且具有如雷射二极管(LaserDiode)的雷射部26b，如图2F’所示，以将电信号转换为光信号并发射如雷射信号的光信号。
另外，该光通讯元件26经由多个如焊锡凸块、铜凸块或其它等的导电凸块27电性连接该电性接触垫202。在本实施例中，可形成一凸块底下金属层(Under BumpMetallurgy，简称UBM)270在该电性接触垫202上，以利于结合该导电凸块27。
又，可形成一如底胶的封装材29在该线路结构20与该光通讯元件26之间，以包覆所述导电凸块27。
另外，如图2F’所示，其对应图2F的局部横剖面F-F下视图，该多个导电凸块27位在该雷射部26b外，且该封装材29未形成在该雷射部26b上，所以该封装材29不会影响该雷射部26b的光信号传输。
因此，在该电子封装件2的运行过程中，该驱动器(该第一电子元件21)驱动该光通讯元件26，以令该光通讯元件26的连接段260接收一光纤(图未示)的光信号，再经由该光电部26a将该光信号转换成电信号。接着，经由该线路结构20与该雷射部26b将该电信号转换为另一光信号，以令该雷射部26b发射如雷射信号的另一光信号至一目标装置(图未示)。
因此，若将该电子封装件2应用在网通交换器时，由在该光通讯元件26具有该雷射部26b而对外界环境应力具有高敏感性，所以本发明的制法先研磨该包覆层25(如图2B所示)，再设置该光通讯元件26(如图2F所示)，以避免研磨制程影响该光通讯元件26。
另外，本发明的制法经由该包覆层25定义有该移除区C，以在移除该移除区C及其上的线路结构20、绝缘层91与线路部240后，使该光通讯元件26的连接段260能有效凸出该包覆层25的侧面25c，因而能避免后续制程用的封装材29附着在该连接段260上，所以该封装材29不会影响该连接段260的光信号传输。
另外，经由将该光电部26a与该雷射部26b整合为单一光通讯元件26，以避免因该光电部26a与该雷射部26b分开配置时两者之间的辐射电磁能量而引起的信号衰减及串扰等问题，且能改善该电子封装件2整体的适用度及可缩放性。
又，因无需采用现有均衡、编码及屏蔽等设计，所以不会产生相当大的功率、复杂度及电缆容积损失等状况。
进一步，如图3所示，可将所述导电元件24接置一承载结构30上，以形成另一电子封装件3。
在本实施例中，该承载结构30为基板形式，其具有相对的上表面30a与下表面30b，以令该电子封装件2设在该承载结构30的上表面30a上。例如，该承载结构30为具有核心层与线路结构的封装基板或无核心层(coreless)的线路结构，且该线路结构其包含至少一绝缘层及至少一结合该绝缘层的线路层，如至少一扇出(fan out)型重布线路层(redistribution layer，简称RDL)。应可理解地，该承载结构30也可为其它板材，如导线架(lead frame)、晶圆(wafer)、或其它具有金属布线(routing)的载板等，并不限于上述。
另外，所述导电元件24电性连接该承载结构30，并以底胶31包覆所述导电元件24。
又，该承载结构30上可依功能需求配置有至少一第二电子元件32、第三电子元件33及/或散热件34。
所述的第二电子元件32设在该承载结构30的上表面30a上，且该第二电子元件32例如为主动元件、被动元件、封装结构或其组合者，其中，该主动元件例如为半导体芯片，而该被动元件例如为电阻、电容及电感。在本实施例中，该第二电子元件32为半导体芯片，其可经由多个如焊锡材料、金属柱(pillar)或其它等的导电凸块320以覆晶方式设在该承载结构30的线路层上并电性连接该线路层，并以底胶31包覆所述导电凸块320；或者，该第二电子元件32可经由多个焊线以打线方式电性连接该承载结构30的线路层；又或者，该第二电子元件32可直接接触该承载结构30的线路层。应可理解地，有关该第二电子元件32电性连接该承载结构30的方式繁多，并不限于上述。
另一方面，基于功能需求，该第二电子元件32可对应该光通讯元件26配置有至少一组时脉及数据回复电路(Clock and Data Recovery Circuit，简称CDR)，以提供如串列器/解串器(SERializer/DESerializer，简称SERDES)的串列通信技术作同时脉的信号复原或拆除，以作为高频宽传输接点(I/O)。
所述的第三电子元件33设在该承载结构30的下表面30b上，且该第三电子元件33例如为主动元件、被动元件、封装结构或其组合者，其中，该主动元件例如为半导体芯片，而该被动元件例如为电阻、电容及电感。在本实施例中，该第三电子元件33为半导体芯片，其可经由多个如焊锡材料、金属柱或其它等的导电凸块330以覆晶方式设在该承载结构30的线路层上并电性连接该线路层，并以底胶31包覆所述导电凸块330；或者，该第三电子元件33可经由多个焊线以打线方式电性连接该承载结构30的线路层；又或者，该第三电子元件33可直接接触该承载结构30的线路层。应可理解地，有关该第三电子元件33电性连接该承载结构30的方式繁多，并不限于上述。
另一方面，基于功能需求，该第三电子元件33可配置有电源管理集成电路(PowerManagement IC)，以针对主系统进行管理电源等作业。
所述的散热件34经由该散热层35结合至该第二电子元件32上，其中，该散热层35为导热介面材(Thermal Interface Material，简称TIM)，如高导热金属胶材。该散热件34具有一散热体340与至少一设在该散热体340下侧的支撑脚341，该散热体340为散热片型式，并以下侧接触该散热层35，且该支撑脚341经由粘着层36结合在该承载结构30的上表面30a上。
本发明也提供一种电子封装件2,3，其包括：一包覆层25、至少一第一电子元件21、多个导电柱23、一线路结构20以及至少一光通讯元件26。
所述的包覆层25具有相对的第一表面25a与第二表面25b及邻接该第一与第二表面25a,25b的侧面25c。
所述的第一电子元件21嵌埋在该包覆层25中，且该第一电子元件21上结合并电性连接多个导电体22，其中，该导电体22嵌埋在该保护膜211中，并令该导电体22的端面22a外露在该保护膜211的第一表面25a。
所述的导电柱23嵌埋在该包覆层25中，且令该导电柱23的端面23a外露在该包覆层25的第一表面25a。
所述的线路结构20设在该包覆层25的第一表面25a上且电性连接该导电柱23与该导电体22。
所述的光通讯元件26设在该线路结构20上且电性连接该线路结构20，其中，该光通讯元件26具有一光电部26a及一雷射部26b。
在一实施例中，该光电部26a将光信号转换为电信号，而该雷射部26b将该电信号转换为另一光信号并发射该另一光信号。例如，该光通讯元件26经由多个导电凸块27电性连接该线路结构20，且该多个导电凸块27位在该雷射部26b外。进一步，可经由封装材29包覆该多个导电凸块27，且该封装材29未形成在该雷射部26b上。
在一实施例中，该光通讯元件26凸出该包覆层25的侧面25c。
在一实施例中，所述的电子封装件2,3还包括一线路部240，其形成在该包覆层25的第二表面25b上且电性连接该导电柱23。进一步，可包括形成在该线路部240上的多个导电元件24。
在一实施例中，所述的电子封装件3还包括一设置在该包覆层25的第二表面25b上的承载结构30。进一步，可包括至少一设置在该承载结构30上的第二电子元件32。
综上所述，本发明的电子封装件及其制法，其经由该包覆层设计有移除区的设计，以避免研磨制程或该封装材影响该光通讯元件的功能，所以本发明有利于该光通讯元件的运行。
上述实施例仅用于例示性说明本发明的原理及其功效，而非用于限制本发明。任何本领域技术人员均可在不违背本发明的精神及范畴下，对上述实施例进行修改。因此本发明的权利保护范围，应如权利要求书所列。

Claims (20)

1.一种电子封装件，其特征在于，包括：
包覆层，其具有相对的第一表面与第二表面及邻接该第一表面与第二表面的侧面；
第一电子元件，其嵌埋在该包覆层中；
多个导电柱，其嵌埋在该包覆层中；
线路结构，其形成在该包覆层的第一表面上且电性连接该导电柱与该第一电子元件；以及
光通讯元件，其设在该线路结构上且电性连接该线路结构，其中，该光通讯元件具有光电部及雷射部。
2.根据权利要求1所述的电子封装件，其特征在于，该第一电子元件结合及电性连接多个导电体。
3.根据权利要求1所述的电子封装件，其特征在于，该光电部将光信号转换为电信号，而该雷射部将该电信号转换为另一光信号并发射该另一光信号。
4.根据权利要求3所述的电子封装件，其特征在于，该光通讯元件经由多个导电凸块电性连接该线路结构，且所述多个导电凸块位在该雷射部外。
5.根据权利要求4所述的电子封装件，其特征在于，该电子封装件还包括包覆所述多个导电凸块的封装材，其未形成在该雷射部上。
6.根据权利要求1所述的电子封装件，其特征在于，该光通讯元件凸出该包覆层的侧面，且令该光通讯元件的凸出部分作为连接段。
7.根据权利要求1所述的电子封装件，其特征在于，该电子封装件还包括线路部，其形成在该包覆层的第二表面上且电性连接该导电柱。
8.根据权利要求7所述的电子封装件，其特征在于，该电子封装件还包括形成在该线路部上的多个导电元件。
9.根据权利要求1所述的电子封装件，其特征在于，该电子封装件还包括设置在该包覆层的第二表面上的承载结构。
10.根据权利要求9所述的电子封装件，其特征在于，该电子封装件还包括设置在该承载结构上的第二电子元件。
11.一种电子封装件的制法，其特征在于，该制法包括：
经由包覆层包覆第一电子元件与多个导电柱，其中，该包覆层具有相对的第一表面与第二表面，且定义有相邻接的一保留区及一移除区，该保留区包含有该第一电子元件及部分该导电柱，该移除区包含有部分该导电柱；
形成线路结构在该包覆层的第一表面上，且令该线路结构电性连接该导电柱与该第一电子元件；
形成线路部在该包覆层的第二表面上，且令该线路部电性连接该导电柱；
移除该移除区及其上的线路结构与线路部，使该包覆层形成有邻接该第一表面与第二表面的侧面；以及
设置光通讯元件在该线路结构上，且令该光通讯元件电性连接该线路结构，其中，该光通讯元件具有光电部及雷射部。
12.根据权利要求11所述的电子封装件的制法，其特征在于，该第一电子元件结合及电性连接多个导电体。
13.根据权利要求11所述的电子封装件的制法，其特征在于，该多个导电柱在移除该移除区前环绕该第一电子元件。
14.根据权利要求11所述的电子封装件的制法，其特征在于，该光电部将光信号转换为电信号，而该雷射部将该电信号转换为另一光信号并发射该另一光信号。
15.根据权利要求14所述的电子封装件的制法，其特征在于，该光通讯元件经由多个导电凸块电性连接该线路结构，且该多个导电凸块位在该雷射部外。
16.根据权利要求15所述的电子封装件的制法，其特征在于，该制法还包括以封装材包覆该多个导电凸块，且该封装材未形成在该雷射部上。
17.根据权利要求11所述的电子封装件的制法，其特征在于，该光通讯元件凸出该包覆层的侧面，且令该光通讯元件的凸出部分作为连接段。
18.根据权利要求11所述的电子封装件的制法，其特征在于，该制法还包括形成多个导电元件在该线路部上。
19.根据权利要求11所述的电子封装件的制法，其特征在于，该制法还包括设置承载结构在该包覆层的第二表面上。
20.根据权利要求19所述的电子封装件的制法，其特征在于，该制法还包括设置第二电子元件在该承载结构上。
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