CN112441832A - 电介质组合物及电子部件 - Google Patents
电介质组合物及电子部件 Download PDFInfo
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- CN112441832A CN112441832A CN202010749593.7A CN202010749593A CN112441832A CN 112441832 A CN112441832 A CN 112441832A CN 202010749593 A CN202010749593 A CN 202010749593A CN 112441832 A CN112441832 A CN 112441832A
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- 239000000203 mixture Substances 0.000 title claims abstract description 122
- 239000013078 crystal Substances 0.000 claims abstract description 26
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims abstract description 17
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000002131 composite material Substances 0.000 claims description 39
- 239000010955 niobium Substances 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 11
- 229910052758 niobium Inorganic materials 0.000 claims description 9
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 20
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- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 4
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
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- 230000000052 comparative effect Effects 0.000 description 1
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- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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- 150000002736 metal compounds Chemical class 0.000 description 1
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- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
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Abstract
本发明提供一种显示高的相对介电常数,并且即使在还原气氛下烧成,也显示高的电阻率的电介质组合物。所述电介质组合物包含具有以(SrxBa1‑x)yNb2O5+y表示的组成式的复合氧化物,复合氧化物的晶系为四方晶系,组成式中的y小于1。
Description
技术领域
本发明涉及一种电介质组合物及具备由该电介质组合物构成的电介质层的电子部件。
背景技术
在组装于电子设备的电子电路或电源电路中搭载有许多利用电介质表现的介电特性的如层叠陶瓷电容器之类的电子部件。作为构成这样的电子部件的电介质的材料(电介质材料),非专利文献1公开了一种以通式SrxBa1-xNb2O6表示的铁电体材料。
内部电极由贱金属构成的层叠陶瓷电容器通过在氧分压比空气中低的气氛下进行了还原烧成后再实施退火而制作。本发明者发现,非专利文献1中记载的电介质组合物在低氧分压下进行烧成来制作的情况下,存在电阻率低的问题。
现有技术文献
非专利文献
非专利文献1:Acta Cryst.(2006).B62,960-965,Sergey Podlozhenov,HeribertA.Graetsch,Julius Schneider,Michael Ulex,Manfred Wohlecke,Klaus Betzler
发明内容
发明所要解决的技术问题
本发明鉴于这样的实际情况,其目的在于提供一种显示高的相对介电常数,并且即使在还原气氛下烧成,也显示高的电阻率的电介质组合物、和具备由该电介质组合物构成的电介质层的电子部件。
用于解决技术问题的技术方案
为了实现上述目的,本发明的第一观点所涉及的电介质组合物包含具有以(SrxBa1-x)yNb2O5+y表示的组成式的复合氧化物,所述复合氧化物的晶系为四方晶系,所述y小于1。
本发明者发现,通过本发明的第一观点所涉及的电介质组合物为上述的构成,从而能够显示高的相对介电常数,并且显示高的电阻率。作为获得这样的效果的理由,认为是下述理由。
当在还原气氛下烧成以通式(SrxBa1-x)1Nb2O6表示的氧化物时,会从上述的氧化物中夺取氧,氧缺陷和自由电子成对地生成。其结果,认为产生由所生成的自由电子的移动引起的导电性,上述氧化物的电阻率会降低。
与之相对,如上述的复合氧化物那样,通过组成式中的y小于1,从而在产生阳离子缺陷的同时,也产生氧缺陷。其结果,在复合氧化物中,由于某种程度地存在氧缺陷,因此,随着还原烧成而生成氧缺陷及自由电子的反应变得难以进行。即,即使在还原气氛下,也难以发生从复合氧化物中夺取氧而生成自由电子的反应。因此,认为由于难以生成自由电子,因此,电阻率的降低得到抑制。
另外,认为复合氧化物的晶系为四方晶系,由此存在相对介电常数提高的趋势。
根据以上的理由,认为本发明的第一观点所涉及的电介质组合物为上述的构成,由此能够显示高的相对介电常数,并且显示高的电阻率。
本发明的第一观点所涉及的电介质组合物中,所述复合氧化物的空间群也可以为P4bm。
由此,本发明的第一观点所涉及的电介质组合物能够显示高的相对介电常数,并且显示高的电阻率。
本发明的第一观点所涉及的电介质组合物中,所述组成式中的所述x也可以为0.2~0.7。
由此,本发明的第一观点所涉及的电介质组合物能够显示高的相对介电常数,并且显示高的电阻率。另外,组成式中的x包含于上述的范围内,由此容易得到晶系为四方晶系的复合氧化物,有相对介电常数提高的趋势。
为了实现上述目的,本发明的第二观点所涉及的电介质组合物包含具有以(SrxBa1-x)yNb2O5+y表示的组成式的复合氧化物,所述组成式中的所述x为0.2~0.7,所述组成式中的所述y小于1。
本发明者发现,通过本发明的第二观点所涉及的电介质组合物为上述的构成,从而能够显示高的相对介电常数,并且显示高的电阻率。作为获得这样的效果的理由,认为是下述理由。
首先,本发明的第二观点所涉及的电介质组合物与本发明的第一观点所涉及的电介质组合物同样地,包含具有以(SrxBa1-x)yNb2O5+y表示的组成式的复合氧化物,组成式中的y小于1。因此,与本发明的第一观点所涉及的电介质组合物同样地,通过组成式中的y小于1,成为阳离子缺陷的状态,并且成为氧缺陷的状态。其结果,在复合氧化物中,由于某种程度地存在氧缺陷,因此,随着还原烧成而生成氧缺陷及自由电子的反应变得难以进行。即,即使在还原气氛下,也可以抑制从复合氧化物中夺取氧而生成自由电子的反应。因此,认为由于难以生成自由电子,因此,电阻率的降低得到抑制。
另外,认为通过组成式中的x包含于上述的范围内,从而容易得到晶系为四方晶系的复合氧化物,有相对介电常数提高的趋势。
根据以上的理由,认为通过本发明的第二观点所涉及的电介质组合物为上述的构成,从而能够显示高的相对介电常数,并且显示高的电阻率。
本发明的第一观点所涉及的电介质组合物及第二观点所涉及的电介质组合物中,所述组成式中的所述y也可以为0.95以下。
由此,本发明的第一观点所涉及的电介质组合物及第二观点所涉及的电介质组合物能够显示更高的电阻率。
本发明的第一观点所涉及的电介质组合物及第二观点所涉及的电介质组合物中,所述电介质组合物也可以含有第一副成分元素,
所述第一副成分元素也可以是选自铜、锌、钯、钽及锡中的至少任意一种。
由此,本发明的第一观点所涉及的电介质组合物及第二观点所涉及的电介质组合物能够维持高的相对介电常数,并且能够进一步提高电阻率。
本发明的第一观点所涉及的电介质组合物及第二观点所涉及的电介质组合物中,相对于所述复合氧化物中的铌100摩尔份,也可以含有10摩尔份以下的所述第一副成分元素。
由此,本发明的第一观点所涉及的电介质组合物及第二观点所涉及的电介质组合物能够维持高的相对介电常数,并且能够进一步提高电阻率。
本发明的第一观点所涉及的电介质组合物及第二观点所涉及的电介质组合物中,所述电介质组合物也可以含有第二副成分元素,
所述第二副成分元素也可以是选自镓、钾、钼、硼、镍及锆中的至少任意一种。
由此,本发明的第一观点所涉及的电介质组合物及第二观点所涉及的电介质组合物能够维持高的相对介电常数,并且能够进一步提高电阻率。
本发明的第一观点所涉及的电介质组合物及第二观点所涉及的电介质组合物中,相对于所述复合氧化物中的铌100摩尔份,也可以含有10摩尔份以下的所述第二副成分元素。
由此,本发明的第一观点所涉及的电介质组合物及第二观点所涉及的电介质组合物能够维持高的相对介电常数,并且能够进一步提高电阻率。
本发明的电子部件具备含有第一观点所涉及的电介质组合物或第二观点所涉及的电介质组合物的电介质层。
由此,本发明的电子部件例如即使与含有贱金属作为主要成分的电极层一起在还原气氛下进行烧成,也能够显示高的相对介电常数,并且显示高的电阻率。
附图说明
图1是本发明的一个实施方式的层叠陶瓷电容器的剖面图。
符号的说明:
1…层叠陶瓷电容器
10…元件主体
2…电介质层
3…内部电极层
4…外部电极
具体实施方式
(1.层叠陶瓷电容器)
(1.1层叠陶瓷电容器的整体结构)
图1表示作为本实施方式的电子部件的一例的层叠陶瓷电容器1。层叠陶瓷电容器1具有由电介质层2和内部电极层3交替层叠而成的结构的元件主体10。在该元件主体10的两端部形成有分别与在元件主体10的内部交替配置的内部电极层3导通的一对外部电极4。元件主体10的形状没有特别限制,但通常制成长方体状。另外,元件主体10的尺寸也没有特别限制,只要根据用途而设为适当的尺寸即可。
(1.2电介质层)
电介质层2由后述的本实施方式的电介质组合物构成。
电介质层2的每一层的厚度(层间厚度)没有特别限定,可以根据所期望的特性或用途等而任意设定。通常,层间厚度优选为30μm以下,更优选为20μm以下,进一步优选为10μm以下。另外,电介质层2的层叠数没有特别限定,在本实施方式中,例如优选为20以上。
(1.3内部电极层)
在本实施方式中,内部电极层3以各端部在元件主体10的相对的两个端面的表面交替露出的方式层叠。
内部电极层3中所含的导电材料的主要成分为贱金属。这里,主要成分是内部电极层3中所含的导电材料中占据80质量%以上的成分。作为贱金属,没有特别限定,只要使用例如Ni、Ni系合金、Cu、Cu系合金等公知的导电材料作为贱金属即可。此外,在Ni、Ni系合金、Cu或Cu系合金中也可以含有0.1质量%左右以下的P或S等各种微量成分。另外,内部电极层3也可以使用市售的电极用膏来形成。内部电极层3的厚度只要根据用途等适当确定即可。
(1.4外部电极)
外部电极4中所含的导电材料没有特别限定。只要使用例如Ni、Cu、Sn、Ag、Pd、Pt、Au或这些的合金、导电性树脂等公知的导电材料即可。外部电极4的厚度只要根据用途等而适当确定即可。
(2.电介质组合物)
构成本实施方式的电介质层2的电介质组合物包含具有以(SrxBa1-x)yNb2O5+y表示的组成式的复合氧化物,根据需要,也可以含有第一副成分元素、第二副成分元素及其他成分元素。
(2.1复合氧化物)
本实施方式的复合氧化物具有以(SrxBa1-x)yNb2O5+y表示的组成式,上述组成式中的y小于1。在本实施方式中,上述组成式中的y优选为0.95以下。
上述组成式中的y的下限在可以得到本发明的效果的范围内没有限制,但优选为例如0.8以上。
本发明者发现,通过上述组成式中的y小于1,从而上述的复合氧化物即使在还原气氛下烧成,也能够显示高的电阻率。即,在还原气氛下将含有上述复合氧化物的电介质组合物与由贱金属构成的电极同时烧成而得到的层叠陶瓷电容器1能够显示高的相对介电常数,并且显示高的电阻率。
作为即使将本实施方式的电介质组合物在还原气氛下烧成,也能够得到高的电阻率的主要原因,例如可以如下推测。
当将以通式(SrxBa1-x)1Nb2O6表示的氧化物在还原气氛下烧成时,会从上述的氧化物中夺取氧,氧缺陷和自由电子成对地生成。其结果,认为会产生由所生成的自由电子的移动引起的导电性,上述氧化物的电阻率降低。
与之相对,如上述的复合氧化物那样,通过组成式中的y小于1,从而成为阳离子缺陷的状态,并且成为氧缺陷的状态。其结果,在复合氧化物中,由于某种程度地存在氧缺陷,因此,随着还原烧成而生成氧缺陷及自由电子的反应变得难以进行。即,即使在还原气氛下,也难以发生从复合氧化物中夺取氧而生成自由电子的反应。因此,认为由于难以生成自由电子,因此,电阻率的降低得到抑制。
另外,本实施方式的复合氧化物的晶系为四方晶系。由此,认为能够显示高的相对介电常数。
在是具有以(SrxBa1-x)yNb2O5+y表示的组成式的上述复合氧化物,且晶体结构为四方晶的情况下,与晶体结构为立方晶、斜方晶、六方晶或单斜晶的情况相比,结晶中的Nb5+离子位移的范围变大,因此,在施加了电场时,容易极化。因此,在上述复合氧化物的晶系为四方晶系的情况下,与晶系为立方晶系、斜方晶系、六方晶系或单斜晶系的情况相比,认为相对介电常数有升高的倾向。
另外,本实施方式的复合氧化物的空间群为P4bm。由此,能够显示高的相对介电常数,并且显示高的电阻率。作为其理由,被认为是由于结晶中的Nb5+离子位移的范围变大的缘故。
在本实施方式中,上述组成式中的x优选为0.2~0.7。通过上述组成式中的x包含于上述的范围内,从而能够显示高的相对介电常数,并且显示高的电阻率。另外,通过上述组成式中的x包含于上述范围内,容易得到晶系为四方晶系的复合氧化物,相对介电常数有提高的倾向。在本实施方式中,上述组成式中的x更优选为0.2~0.6。
(2.2第一副成分元素)
本实施方式的电介质组合物也可以含有第一副成分元素。电介质组合物通过含有第一副成分元素,能够维持高的相对介电常数,并且能够进一步提高电阻率。
本实施方式的第一副成分元素是选自铜(Cu)、锌(Zn)、钯(Pd)、钽(Ta)及锡(Sn)中的至少任意一种,优选为铜(Cu)、锌(Zn)及钯(Pd)。作为第一副成分元素,可以仅使用一种元素,也可以并用两种以上。
本实施方式的第一副成分元素优选相对于以(SrxBa1-x)yNb2O5+y式表示的复合氧化物中的铌(Nb)100摩尔份而含有10摩尔份以下。由此,能够维持高的相对介电常数,并且能够进一步提高电阻率。本实施方式的第一副成分元素更优选相对于以(SrxBa1-x)yNb2O5+y式表示的复合氧化物中的铌(Nb)100摩尔份而含有1~10摩尔份,进一步优选含有3~10摩尔份。
(2.3第二副成分元素)
本实施方式的电介质组合物也可以含有第二副成分元素。通过电介质组合物含有第二副成分元素,能够维持高的相对介电常数,并且能够进一步提高电阻率。
上述第二副成分元素是选自镓(Ga)、钾(K)、钼(Mo)、硼(B)、镍(Ni)及锆(Zr)中的至少任意一种,优选为镓(Ga)、钾(K)及钼(Mo)。作为第二副成分元素,可以仅使用一种元素,也可以并用两种以上。
本实施方式的第二副成分元素优选相对于以(SrxBa1-x)yNb2O5+y式表示的复合氧化物中的铌(Nb)100摩尔份而含有10摩尔份以下。由此,能够维持高的相对介电常数,并且能够进一步提高电阻率。本实施方式的第二副成分元素更优选相对于以(SrxBa1-x)yNb2O5+y式表示的复合氧化物中的铌(Nb)100摩尔份而含有1~10摩尔份,进一步优选含有3~10摩尔份。
(3.层叠陶瓷电容器的制造方法)
接着,以下对图1所示的层叠陶瓷电容器1的制造方法的一例进行说明。
首先,准备电介质组合物的起始原料。作为起始原料,可以使用构成上述电介质组合物的复合氧化物。另外,可以使用复合氧化物所含的各金属的氧化物。另外,可以使用通过烧成而成为构成该复合氧化物的成分的各种化合物。作为各种化合物,例如可以例示碳酸盐、草酸盐、硝酸盐、氢氧化物、有机金属化合物等。在本实施方式中,上述的起始原料优选为粉末。
在电介质组合物含有第一副成分元素的情况下,准备含有第一副成分元素的原料。另外,在电介质组合物含有第二副成分元素的情况下,准备含有第二副成分元素的原料。作为含有第一副成分元素的原料或含有第二副成分元素的原料,与复合氧化物的原料同样地,可以使用氧化物等各种化合物等。
在所准备的起始原料中按规定的比例称量了复合氧化物的原料之后,使用球磨机等,进行规定时间的湿式混合。在将混合粉干燥后,在大气中,在700~1300℃的范围内进行热处理,得到复合氧化物的煅烧粉末。另外,煅烧粉末也可以使用球磨机等进行规定时间的粉碎。
接下来,制备用于制作生坯芯片的膏。将所得到的煅烧粉末、粘合剂和溶剂混炼并涂料化,来制备电介质层用膏。粘合剂及溶剂只要使用公知的粘合剂和溶剂即可。
此外,在电介质组合物含有第一副成分元素的情况下,将上述的煅烧粉末、含有第一副成分元素的原料粉末、粘合剂和溶剂混炼并涂料化,来制备电介质层用膏。
另外,在电介质组合物含有第二副成分元素的情况下,将上述的煅烧粉末、含有第二副成分元素的原料粉末、粘合剂和溶剂混炼并涂料化,来制备电介质层用膏。
电介质层用膏根据需要也可以含有增塑剂或分散剂等添加物。
内部电极层用膏是将上述导电材料的原料、粘合剂和溶剂混炼而得到的。粘合剂及溶剂只要使用公知的粘合剂及溶剂即可。内部电极层用膏根据需要也可以含有常用材料或增塑剂等添加物。
外部电极用膏可以与内部电极层用膏同样地制备。
使用所得到的各膏,形成生片及内部电极图案,将其层叠,得到生坯芯片。
根据需要,对所得到的生坯芯片进行脱粘合剂处理。脱粘合剂处理条件例如优选将保持温度设为200~350℃。
在脱粘合剂处理后,进行生坯芯片的烧成,得到元件主体10。在本实施方式中,能够进行还原气氛下的烧成(还原烧成)。在本实施方式中,优选将烧成时的保持温度设为1200~1350℃。这样,即使使烧成时的保持温度比较低,也容易得到本实施方式的电介质组合物。
在烧成后,根据需要,对所得到的元件主体10进行再氧化处理(退火)。退火条件只要设为公知的条件即可,例如,优选将退火时的氧分压设为比烧成时的氧分压高的氧分压,并且将保持温度设为1150℃以下。
如上所述得到的元件主体10的构成电介质层2的电介质组合物是上述的电介质组合物。对该元件主体10实施端面研磨,涂布并烧接外部电极用膏,形成外部电极4。然后,根据需要,通过镀敷等在外部电极4的表面形成包覆层。
这样,制造本实施方式的层叠陶瓷电容器1。
(4.变形例)
在上述的实施方式中,对本发明的电子部件为层叠陶瓷电容器的情况进行了说明,但本发明的电子部件不限定于层叠陶瓷电容器,只要是具有上述电介质组合物的电子部件即可。
例如,也可以是在上述的电介质组合物形成有一对电极的单板型陶瓷电容器。
另外,电介质组合物也可以不含有第一副成分元素及第二副成分元素。进一步,电介质组合物也可以含有第一副成分元素及第二副成分元素中的至少任一者。
以上,对本发明的实施方式进行了说明,但本发明不限定于上述的实施方式,也可以在本发明的范围内以各种方式进行改变。
实施例
下面,利用实施例及比较例对本发明进行更详细地说明。但是,本发明不限定于以下的实施例。
(实验1)
作为电介质组合物所含的复合氧化物的起始原料,准备了碳酸钡(BaCO3)、碳酸锶(SrCO3)及氧化铌(Nb2O5)的粉末。以烧成后的电介质组合物所含的复合氧化物成为表1所示的x及y的方式称量所准备的起始原料。
接着,使用作为分散介质的离子交换水并利用球磨机对所称量的各粉末进行16小时的湿式混合,将混合物干燥,得到混合原料粉末。其后,在大气中以保持温度900℃、保持时间2小时的条件对所得到的混合原料粉末进行热处理,得到复合氧化物的煅烧粉末。
使用作为分散介质的离子交换水并利用球磨机对所得到的煅烧粉末进行16小时的湿式粉碎,将粉碎物干燥。
相对于粉碎后的煅烧粉末100质量%,添加10质量%的含有6质量%的作为粘合剂的聚乙烯醇树脂的水溶液并进行造粒,得到造粒粉。
将所得到的生坯成型体在还原气氛下烧成,进一步进行退火处理,得到在还原气氛下烧成后的烧结体(电介质组合物)。烧成条件是将升温速度设为200℃/h、将保持温度设为1300℃、将保持时间设为2小时。气氛气体设为加湿至露点20℃的氮和氢的混合气体(氢浓度3%)。另外,退火处理条件是将保持温度设为1050℃、将保持时间设为2小时。气氛气体设为加湿至露点20℃的氮气。
在所得到的烧结体的两主面上涂布In-Ga合金,形成一对电极,由此得到圆盘状的陶瓷电容器的试样。
使用X射线结构分析装置对所得到的电介质组合物所含的复合氧化物的晶系及空间群进行了分析。将结果表示在表1中。
电容器试样的密度如下进行测定。在三处测定烧成后的圆盘状的电容器试样的直径,得到直径R。接着,在三处测定圆盘状的电容器试样的厚度,得到厚度h。使用所得到的R和h,算出圆盘状的电容器试样的体积V(=1/4·π·R2·h)。这里的π表示圆周率。接下来,测定圆盘状的电容器试样的质量m,算出m/V,由此得到圆盘状的电容器试样的密度。将对三个试样进行了评价得到的密度的结果的平均值表示在表1中。
在基准温度(25℃)下,使用数字电阻仪(ADVANTEST公司制造的R8340)对电容器试样测定了绝缘电阻。根据所得到的绝缘电阻、有效电极面积和电介质层的厚度,计算出电阻率。电阻率越高越优选。将结果表示在表1中。
在室温(20℃)下,使用数字LCR仪(YHP公司制造的4284A),对电阻率为1.0×108(Ω·m)以上的试样输入频率1kHz、输入信号电平(测定电压)1Vrms的信号,测定电容。然后,基于电介质层的厚度、有效电极面积、通过测定而得到的电容,算出相对介电常数(无单位)。相对介电常数越高越优选。将结果表示在表1中。
此外,电阻率为1.0×104(Ω·m)以上且小于1.0×108(Ω·m)的试样的相对介电常数是基于在频率1MHz下测得的电容而算出的。这是由于在频率1kHz下测得的这些试样的电容的测定值会受到试样的低电阻的强烈影响,缺乏可靠性。
[表1]
由表1可以确认,在使用了晶系为四方晶系且y小于1的复合氧化物的情况(试样编号2~4、4a及8~10)下,即使在还原气氛下烧成,也显示高的相对介电常数,并且显示高的电阻率。
(实验2)
作为表2~表6所示的第一副成分元素或第二副成分元素的起始原料,准备了第一副成分元素或第二副成分元素的各氧化物的粉末。另外,以烧成后的电介质组合物中的第一副成分元素或第二副成分元素的含量成为表2~表6所示的值的方式称量所准备的起始原料。此外,表2~表6中记载的第一副成分元素或第二副成分元素的“含量”是相对于复合氧化物中的铌(Nb)100摩尔份的含量。
相对于由实验1所示的方法得到的粉碎后的复合氧化物的煅烧粉末及上述的第一副成分元素的氧化物或第二副成分元素的氧化物的混合物100质量%,添加10质量%的含有6质量%作为粘合剂的聚乙烯醇树脂的水溶液并进行造粒,得到造粒粉。除了上述以外,与实验1的试样编号3同样地进行,得到圆盘状的陶瓷电容器的试样。
另外,与实验1同样地对所得到的烧结体的晶系及空间群进行了分析,结果可以确认表2~表6的各试样其晶系全部为四方晶系,且空间群为P4bm。
进一步,与实验1同样地测定了密度、电阻率及相对介电常数。表3~表5的各试样相对介电常数都为300以上。将密度及电阻率的结果表示在表2~表6中。
[表2]
x=0.40,y=0.90
晶系:四方晶系
空间群:P4bm
[表3]
x=0.40,y=0.90
晶系:四方晶系
空间群:P4bm
[表4]
x=0.40,y=0.90
晶系:四方晶系
空间群:P4bm
[表5]
x=0.40,y=0.90
晶系:四方晶系
空间群:P4bm
[表6]
x=0.40,y=0.90
晶系:四方晶系
空间群:P4bm
由表2及表4可以确认,在含有第一副成分元素的情况(试样编号21~25、41~45)下,与不含有第一副成分元素的情况(试样编号3)相比,电阻率变高。另外,可以确认在第一副成分元素的含量为10摩尔份的情况(试样编号41~45)下,与第一副成分元素的含量为5摩尔份的情况(试样编号21~25)相比,电阻率变高。
由表3及表5可以确认,在含有第二副成分元素的情况(试样编号31~36、51~56)下,与不含有第二副成分元素的情况(试样编号3)相比,电阻率变高。另外,在第二副成分元素的含量为10摩尔份的情况(试样编号51~56)下,与第二副成分元素的含量为5摩尔份的情况(试样编号31~36)相比,电阻率变高。
由表6可以确认,在作为第一副成分元素的铜(Cu)的含量为1~10摩尔份的情况(试样编号21、41及61~64)下,与不含有第一副成分元素的情况(试样编号3)相比,电阻率变高。
Claims (10)
1.一种电介质组合物,其中,
包含具有以(SrxBa1-x)yNb2O5+y表示的组成式的复合氧化物,所述复合氧化物的晶系为四方晶系,所述组成式中的所述y小于1。
2.根据权利要求1所述的电介质组合物,其中,
所述复合氧化物的空间群为P4bm。
3.根据权利要求1所述的电介质组合物,其中,
所述组成式中的所述x为0.2~0.7。
4.一种电介质组合物,其中,
包含以(SrxBa1-x)yNb2O5+y表示的复合氧化物,
所述组成式中的所述x为0.2~0.7,所述组成式中的所述y小于1。
5.根据权利要求1所述的电介质组合物,其中,
所述组成式中的所述y为0.95以下。
6.根据权利要求1所述的电介质组合物,其中,
所述电介质组合物含有第一副成分元素,
所述第一副成分元素是选自铜、锌、钯、钽及锡中的至少任意一种。
7.根据权利要求6所述的电介质组合物,其中,
相对于所述复合氧化物中的铌100摩尔份,含有10摩尔份以下的所述第一副成分元素。
8.根据权利要求1所述的电介质组合物,其中,
所述电介质组合物含有第二副成分元素,
所述第二副成分元素是选自镓、钾、钼、硼、镍及锆中的至少任意一种。
9.根据权利要求8所述的电介质组合物,其中,
相对于所述复合氧化物中的铌100摩尔份,含有10摩尔份以下的所述第二副成分元素。
10.一种电子部件,其中,
具备含有权利要求1~9中任一项所述的电介质组合物的电介质层。
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06231994A (ja) * | 1993-02-05 | 1994-08-19 | Sumitomo Metal Ind Ltd | 半導体磁器組成物 |
CN103288449A (zh) * | 2012-02-29 | 2013-09-11 | Tdk株式会社 | 介电体陶瓷组合物以及电子部件 |
CN103288452A (zh) * | 2012-02-29 | 2013-09-11 | Tdk株式会社 | 电介质陶瓷组合物以及电子元件 |
Non-Patent Citations (1)
Title |
---|
张宝林: "铌酸锶钡陶瓷的制备与介电性能的研究", 知网硕士电子期刊, no. 9, pages 3 - 1 * |
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