CN112424958A - 微型发光二极管的巨量转移方法及系统 - Google Patents
微型发光二极管的巨量转移方法及系统 Download PDFInfo
- Publication number
- CN112424958A CN112424958A CN201980000828.8A CN201980000828A CN112424958A CN 112424958 A CN112424958 A CN 112424958A CN 201980000828 A CN201980000828 A CN 201980000828A CN 112424958 A CN112424958 A CN 112424958A
- Authority
- CN
- China
- Prior art keywords
- substrate
- micro light
- emitting diodes
- emitting diode
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 110
- 238000012546 transfer Methods 0.000 title claims description 65
- 239000000758 substrate Substances 0.000 claims abstract description 634
- 230000008569 process Effects 0.000 claims description 61
- 239000000853 adhesive Substances 0.000 claims description 37
- 230000001070 adhesive effect Effects 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 36
- 239000003086 colorant Substances 0.000 claims description 25
- 239000002313 adhesive film Substances 0.000 claims description 17
- 238000000059 patterning Methods 0.000 claims description 13
- 238000007731 hot pressing Methods 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 238000005520 cutting process Methods 0.000 claims description 9
- 238000011068 loading method Methods 0.000 claims description 9
- 238000001029 thermal curing Methods 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 7
- 230000009471 action Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000084 colloidal system Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Supply And Installment Of Electrical Components (AREA)
Abstract
一种微型发光二极管的巨量转移方法及系统,其中,巨量转移方法包括:提供形成有多个微型发光二极管的元件基板(200)(S101);采用第一中载基板(300)上的多个粘接结构(31)将元件基板(200)上的微型发光二极管进行至少一次拾取,并在每次拾取后转移至第二中载基板(400)上(S102);将第二中载基板(400)上的各微型发光二极管一次性转移至目标基板(100)上对应的子像素内(S103);其中,第二中载基板(400)上的一个微型发光二极管对应目标基板(100)的一个子像素。
Description
PCT国内申请,说明书已公开。
Claims (19)
- PCT国内申请,权利要求书已公开。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202410352902.5A CN118231534A (zh) | 2019-06-13 | 2019-06-13 | 微型发光二极管的巨量转移方法及系统 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2019/091167 WO2020248201A1 (zh) | 2019-06-13 | 2019-06-13 | 微型发光二极管的巨量转移方法及系统 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202410352902.5A Division CN118231534A (zh) | 2019-06-13 | 2019-06-13 | 微型发光二极管的巨量转移方法及系统 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112424958A true CN112424958A (zh) | 2021-02-26 |
CN112424958B CN112424958B (zh) | 2024-04-09 |
Family
ID=73780692
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202410352902.5A Pending CN118231534A (zh) | 2019-06-13 | 2019-06-13 | 微型发光二极管的巨量转移方法及系统 |
CN201980000828.8A Active CN112424958B (zh) | 2019-06-13 | 2019-06-13 | 微型发光二极管的巨量转移方法及系统 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202410352902.5A Pending CN118231534A (zh) | 2019-06-13 | 2019-06-13 | 微型发光二极管的巨量转移方法及系统 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11437265B2 (zh) |
EP (1) | EP3985744A4 (zh) |
JP (2) | JP7364603B2 (zh) |
CN (2) | CN118231534A (zh) |
WO (1) | WO2020248201A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114141804A (zh) * | 2021-11-23 | 2022-03-04 | 深圳市华星光电半导体显示技术有限公司 | 发光二极管的转移方法、发光基板以及显示面板 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114512584B (zh) | 2022-02-18 | 2022-08-16 | 广东工业大学 | 一种Mini/micro芯片快速转移封装系统 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101859714A (zh) * | 2009-04-10 | 2010-10-13 | 索尼公司 | 显示器制造方法和显示器 |
CN106783648A (zh) * | 2016-12-28 | 2017-05-31 | 歌尔股份有限公司 | 一种led显示屏的制备方法 |
CN107026124A (zh) * | 2014-11-27 | 2017-08-08 | 广州硅芯电子科技有限公司 | 制造微型led显示器的方法和微型led显示器 |
CN108962789A (zh) * | 2018-06-25 | 2018-12-07 | 开发晶照明(厦门)有限公司 | 微器件转移方法和微器件转移设备 |
US20190081200A1 (en) * | 2017-09-13 | 2019-03-14 | PlayNitride Inc. | Method of manufacturing micro light-emitting element array, transfer carrier, and micro light-emitting element array |
CN109524512A (zh) * | 2018-11-15 | 2019-03-26 | 华中科技大学 | 基于可控微反射镜阵列的微型发光二极管巨量转移方法 |
US20200259044A1 (en) * | 2017-08-01 | 2020-08-13 | Innolux Corporation | Methods for manufacturing semiconductor device |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6942750B2 (en) * | 2001-06-08 | 2005-09-13 | The Regents Of The University Of Michigan | Low-temperature patterned wafer bonding with photosensitive benzocyclobutene (BCB) and 3D MEMS (microelectromechanical systems) structure fabrication |
JP4082242B2 (ja) * | 2003-03-06 | 2008-04-30 | ソニー株式会社 | 素子転写方法 |
JP4100203B2 (ja) * | 2003-03-14 | 2008-06-11 | ソニー株式会社 | 素子転写方法 |
JP5670249B2 (ja) * | 2011-04-14 | 2015-02-18 | 日東電工株式会社 | 発光素子転写シートの製造方法、発光装置の製造方法、発光素子転写シートおよび発光装置 |
US8889485B2 (en) * | 2011-06-08 | 2014-11-18 | Semprius, Inc. | Methods for surface attachment of flipped active componenets |
WO2016120398A1 (en) * | 2015-01-30 | 2016-08-04 | Osram Opto Semiconductors Gmbh | Method for producing a semiconductor component and semiconductor component |
WO2016183844A1 (en) * | 2015-05-21 | 2016-11-24 | Goertek.Inc | Transferring method, manufacturing method, device and electronic apparatus of micro-led |
KR102442612B1 (ko) * | 2016-02-19 | 2022-09-14 | 삼성디스플레이 주식회사 | 발광 다이오드 트랜스퍼 방법 |
US10325893B2 (en) | 2016-12-13 | 2019-06-18 | Hong Kong Beida Jade Bird Display Limited | Mass transfer of micro structures using adhesives |
TWI756384B (zh) | 2017-03-16 | 2022-03-01 | 美商康寧公司 | 用於大量轉移微型led的方法及製程 |
TW201917811A (zh) | 2017-06-26 | 2019-05-01 | 美商特索羅科學有限公司 | 發光二極體質量傳遞設備及製造方法 |
US20190181122A1 (en) * | 2017-12-13 | 2019-06-13 | Innolux Corporation | Electronic device and method of manufacturing the same |
US10984708B1 (en) * | 2018-03-30 | 2021-04-20 | Facebook Technologies, Llc | Manufacture LED displays using temporary carriers |
-
2019
- 2019-06-13 CN CN202410352902.5A patent/CN118231534A/zh active Pending
- 2019-06-13 EP EP19931500.3A patent/EP3985744A4/en active Pending
- 2019-06-13 CN CN201980000828.8A patent/CN112424958B/zh active Active
- 2019-06-13 JP JP2020571449A patent/JP7364603B2/ja active Active
- 2019-06-13 US US16/770,655 patent/US11437265B2/en active Active
- 2019-06-13 WO PCT/CN2019/091167 patent/WO2020248201A1/zh active Application Filing
-
2023
- 2023-10-05 JP JP2023173641A patent/JP2024008937A/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101859714A (zh) * | 2009-04-10 | 2010-10-13 | 索尼公司 | 显示器制造方法和显示器 |
CN107026124A (zh) * | 2014-11-27 | 2017-08-08 | 广州硅芯电子科技有限公司 | 制造微型led显示器的方法和微型led显示器 |
CN106783648A (zh) * | 2016-12-28 | 2017-05-31 | 歌尔股份有限公司 | 一种led显示屏的制备方法 |
US20200259044A1 (en) * | 2017-08-01 | 2020-08-13 | Innolux Corporation | Methods for manufacturing semiconductor device |
US20190081200A1 (en) * | 2017-09-13 | 2019-03-14 | PlayNitride Inc. | Method of manufacturing micro light-emitting element array, transfer carrier, and micro light-emitting element array |
CN108962789A (zh) * | 2018-06-25 | 2018-12-07 | 开发晶照明(厦门)有限公司 | 微器件转移方法和微器件转移设备 |
CN109524512A (zh) * | 2018-11-15 | 2019-03-26 | 华中科技大学 | 基于可控微反射镜阵列的微型发光二极管巨量转移方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114141804A (zh) * | 2021-11-23 | 2022-03-04 | 深圳市华星光电半导体显示技术有限公司 | 发光二极管的转移方法、发光基板以及显示面板 |
Also Published As
Publication number | Publication date |
---|---|
EP3985744A1 (en) | 2022-04-20 |
US20210407841A1 (en) | 2021-12-30 |
JP2022543329A (ja) | 2022-10-12 |
US11437265B2 (en) | 2022-09-06 |
CN112424958B (zh) | 2024-04-09 |
CN118231534A (zh) | 2024-06-21 |
WO2020248201A1 (zh) | 2020-12-17 |
EP3985744A4 (en) | 2023-01-25 |
JP2024008937A (ja) | 2024-01-19 |
JP7364603B2 (ja) | 2023-10-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10741608B2 (en) | Manufacturing method of micro light-emitting diode display panel | |
CN109300931B (zh) | 一种Micro LED显示面板及制作方法、显示装置 | |
US10886257B2 (en) | Micro LED display device and method for manufacturing same | |
US9698160B2 (en) | Method for transferring micro devices and method for manufacturing display panel | |
US10096740B1 (en) | Method for manufacturing color micro light-emitting diode array substrate | |
CN109935664B (zh) | 光电半导体戳记及其制造方法与光电半导体装置 | |
TW201947737A (zh) | 一種發光裝置及其製造方法 | |
US10991845B2 (en) | Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component | |
CN109920814B (zh) | 显示基板及制造方法、显示装置 | |
JP2024008937A (ja) | マイクロ発光ダイオードのマストランスファー方法及びシステム | |
US10707192B2 (en) | Light emitting panel comprising a plurality of light emitting modules | |
US11942485B2 (en) | Substrate having dual edge connection line and method for manufacturing the same, display panel, and display apparatus | |
US20240063360A1 (en) | Drive circuit substrate, led display panel and method of forming the same, and display device | |
CN111902952A (zh) | 发光二极管的巨量转移方法、以及显示背板组件 | |
JP4840371B2 (ja) | 素子転写方法 | |
CN115513244A (zh) | 临时基板、发光二极管芯片的转移方法及显示组件 | |
KR102385376B1 (ko) | 마이크로 진공모듈을 이용한 마이크로 led 어레이 전사를 위한 기판, 마이크로 led 어레이, 마이크로 진공모듈 간의 배치 구조 및 이를 이용한 마이크로 led 디스플레이 제작 방법 | |
CN114787997A (zh) | 形成多色磷光体转换led阵列 | |
JP7269548B2 (ja) | 保持部材、転写部材、チップ基板、転写部材の製造方法及び製造装置、発光基板の製造方法 | |
JP2020194089A (ja) | 転写部材、転写部材の製造方法及び発光基板の製造方法 | |
JP2020191423A (ja) | 保持部材、転写部材、転写部材の製造方法及び発光基板の製造方法 | |
JP2022014690A (ja) | 保持部材、転写部材、転写部材の製造方法及び発光基板の製造方法 | |
US11295972B2 (en) | Layout structure between substrate, micro-LED array and micro-vacuum module for micro-LED array transfer using micro-vacuum module, and method for manufacturing micro-LED display using the same | |
CN115410996B (zh) | 显示面板及其制造方法 | |
TWI796230B (zh) | 發光元件基板及其製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |