CN112420636A - Chip heat radiation structure - Google Patents
Chip heat radiation structure Download PDFInfo
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- CN112420636A CN112420636A CN202011302000.9A CN202011302000A CN112420636A CN 112420636 A CN112420636 A CN 112420636A CN 202011302000 A CN202011302000 A CN 202011302000A CN 112420636 A CN112420636 A CN 112420636A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
Abstract
The invention relates to the technical field of chip heat dissipation, in particular to a chip heat dissipation structure. The heat-conducting chip comprises a base body and a chip, wherein the base body comprises an upper base body and a lower base body, the upper base body is connected with the lower base body through a first screw, an insulating heat-conducting gasket is arranged between the upper base body and the lower base body, a heat-radiating fin is arranged on the lower base body, the chip is fixed on the upper surface of the upper base body through a second screw, a heat-conducting layer is filled between the chip and the upper surface of the upper base body, and the first screw and the second screw are respectively provided with an insulating sleeve; the contact area of the chip and the heat conduction layer is set to be A1, the contact area of the upper base body and the insulating heat conduction pad is set to be A2, the heat conduction coefficient of the heat conduction layer is set to be K1, the heat conduction coefficient of the insulating heat conduction pad is set to be K2, A2: the value of A1 is greater than 1 and less than 2K 1/K2. The invention is beneficial to reasonably improving the comprehensive heat dissipation effect of the heat radiator.
Description
Technical Field
The invention relates to the technical field of chip heat dissipation, in particular to a chip heat dissipation structure.
Background
In the conventional chip heat dissipation technology, a plurality of chips are basically dissipated by one large heat sink. When the chip comprises the igbt chip, the special structure and function of the igbt chip need to be insulated and radiated, and other chips basically do not need to be insulated and radiated. It is usually necessary for the IGBT chip to be connected to the heat sink by using an insulating gasket, but the insulating gasket increases the thermal conduction resistance between the IGBT chip and the metal heat sink. Often, igbt chip heat dissipation is a bottleneck problem of heat dissipation of the whole chip system. To solve this problem, some solutions raise the thermal conductivity of the insulating and heat conducting layer, as in patent document CN 207811642U.
Meanwhile, various conditions such as limited space size of a radiator, limited cost control, limited adjustment range of relative positions of a plurality of chips and the like are frequently met in practical product application, and under the conditions, how to enhance the heat dissipation capability of the igbt chip and balance the heat dissipation effect of other chips so as to finally achieve the heat dissipation balance of the whole chip system is achieved, and no technical means exists at present.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the chip heat dissipation structure with the better heat dissipation effect is provided.
The technical scheme adopted by the invention for solving the technical problems is as follows: chip heat radiation structure, including base member and chip, the base member includes fixed connection's last base member and lower base member, is equipped with radiating fin on the base member down, and the chip is fixed on the upper surface of last base member, and it has insulating heat conduction gasket to go up to fill between base member lower surface and the lower base member upper surface, and it has the heat-conducting layer to fill between chip and the last base member upper surface. The upper base body is connected with the lower base body through a first screw, the upper base body is provided with a screw through hole matched with the first screw, the lower base body is provided with a threaded hole matched with the first screw, and an insulating sleeve is sleeved between the screw through hole of the upper base body and the matching surface of the first screw; the chip is connected with the upper base body through a second screw, the chip is provided with a screw through hole matched with the second screw, the upper base body is provided with a threaded hole matched with the second screw, and an insulating sleeve is sleeved between the screw through hole of the chip and the matching surface of the screw; the contact area of the chip and the heat conduction layer is set to be A1, the contact area of the upper base body and the insulating heat conduction pad is set to be A2, the heat conduction coefficient of the heat conduction layer is set to be K1, the heat conduction coefficient of the insulating heat conduction pad is set to be K2, A2: the value of A1 is greater than 1 and less than 2K 1/K2.
Further, the method comprises the following steps: the matching surface of the upper base body and the lower base body is V-shaped or arc-shaped.
Further, the method comprises the following steps: lower base member includes that thickness is H1's base plate, and base plate top surface middle part position is equipped with V font or curved recess, and the base plate thickness at the lowest position of recess is set for H2, H2: the value of H1 is greater than 0.15.
Further, the method comprises the following steps: a second chip is fixedly arranged on one side of the groove on the top surface of the substrate, a third chip is fixedly arranged on the other side of the groove, a second heat-conducting layer is filled between the top surface of the substrate and the second chip, and a third heat-conducting layer is filled between the top surface of the substrate and the third chip;
taking a vertical plane perpendicular to the length direction of the groove as a reference plane, setting connection points of a groove contour line and a substrate top surface contour line as M points and N points respectively, setting a point at the lowest position of the groove as P point, wherein the M point is a point close to one side of the second chip, the distance value between the M point and the P point is less than that between the N point and the P point, setting an insulating heat conduction gasket corresponding to a region between the M point and the P point as an insulating heat conduction gasket A, setting an insulating heat conduction gasket corresponding to a region between the N point and the P point as an insulating heat conduction gasket B,
when the heat dissipation power of the second chip is appointed to dissipate heat in the appointed area, the heat dissipation power is realized by the distance from the upper base body to the edge of the second chip and the distance from the upper base body to the edge of the third chip;
when the designated tooth sheet of the heat dissipation power of the designated second chip in the designated area is critical, the heat dissipation power of the designated second chip can be realized by the fact that the position of the P point where the lowest position of the groove of the lower base body is located is close to the designated tooth sheet, and meanwhile, the thickness of the insulating heat conduction gasket A is increased to realize heat transfer isolation of the lower base body.
Further, the method comprises the following steps: the second chip is connected with the lower base body through a third screw, the second chip is provided with a screw through hole matched with the third screw, the lower base body is provided with a threaded hole matched with the third screw, and an insulating sleeve is sleeved between the screw through hole of the second chip and the matching surface of the screw; the third chip is connected with the lower base body through a fourth screw, the third chip is provided with a screw through hole matched with the fourth screw, the lower base body is provided with a threaded hole matched with the fourth screw, and an insulating sleeve is sleeved between the screw through hole of the third chip and the matching surface of the screw.
Further, the method comprises the following steps: the lower base body is provided with a through hole for the second screw to pass through, the through hole is a step hole with a large upper end diameter and a small lower end diameter, and a T-shaped insulating sleeve matched with the second screw is sleeved in the step hole.
Further, the method comprises the following steps: the insulating and heat-conducting gasket has an overhang portion with respect to the outer edge of the bottom surface of the upper substrate.
Further, the method comprises the following steps: the upper surface of the upper base body is provided with heat dissipation teeth.
The invention has the beneficial effects that: compared with the existing chip insulation heat dissipation structure, the chip and the upper base body are connected through the non-insulation gasket with larger heat conductivity coefficient for heat transfer, heat is transferred to the upper base body more efficiently, and then heat is transferred through the contact area of the upper base body and the lower base body after the area is increased without the limitation of the size of the chip, so that the bottleneck problem caused by low heat conductivity coefficient of the insulation connection heat transfer gasket is solved. And the heat conduction area is set according to the heat conduction coefficient proportional relation between the heat conduction layer on the lower surface of the chip and the insulating heat conduction gasket on the lower surface of the upper base body, so that the comprehensive heat dissipation effect of the heat radiator is favorably and reasonably improved. The contact surfaces of the upper and lower substrates are V-shaped surfaces or arc surfaces, so that the heat transfer area can be increased, and the influence of the problem of large thermal resistance of the insulating and heat-conducting gasket is weakened; the heat generated by the chip can be transferred to the base body as much as possible, and the V-shaped or arc-shaped matching surface between the upper base body and the lower base body can reduce the time required for positioning between the upper base body and the lower base body during assembly, so that the production assembly efficiency is improved; and can guarantee not to influence the extrusion of insulating heat conduction gasket because of assembly process to influence the heat of metal heat-conducting layer and spread to the region around. When a plurality of chips are arranged, the temperature distribution and heat dissipation of different chips can be controlled by adjusting the relative position relation between the heat radiator and the center of the area of the chip base and controlling the thickness of the heat radiator substrate in the corresponding area, so that the heat of the chips tends to dissipate heat in the designated area, and the high-temperature resistant chips and the tooth sheet areas corresponding to the metal heat radiators are allowed to have high temperatures while the other chip areas have low temperatures when the highest limiting temperatures of the different chips are different.
Drawings
FIG. 1 is an elevational view of a V-shaped mating surface configuration of the present invention;
FIG. 2 is a cross-sectional view A-A of the V-shaped mating surface configuration of the present invention;
FIG. 3 is an elevational view of the arcuate mating surface configuration of the present invention;
FIG. 4 is a schematic structural view in elevation of an embodiment of a linear mating surface of the present invention;
FIG. 5 is a schematic structural view of a second embodiment of a linear mating surface of the present invention in a front view;
FIG. 6 is a schematic structural view of a third embodiment of a straight mating surface of the present invention in a front view;
FIG. 7 is a front view of a structure embodying the present invention applied to a plurality of chips;
fig. 8 is a schematic structural view of a preferred arrangement of the insulating sleeve in the present invention.
Parts, positions and numbers in the drawings: the chip comprises a chip 1, a heat conduction layer 2, an upper base body 3, an insulating heat conduction gasket 4, a lower base body 5, a second chip 6, a third chip 7, a second heat conduction layer 8, a third heat conduction layer 9, an insulating sleeve 10, a first screw 11, a second screw 12, a T-shaped insulating sleeve 13, a heat dissipation tooth 14 and a designated tooth piece 15.
Detailed Description
The invention is further explained below with reference to the drawings and examples.
As shown in fig. 1 and 2, the invention includes a substrate and a chip 1, the substrate includes an upper substrate 3 and a lower substrate 5 which are fixedly connected, an insulating heat-conducting gasket 4 is arranged between the upper substrate 3 and the lower substrate 5, a heat-radiating fin is arranged on the lower substrate 5, the chip 1 is fixed on the upper surface of the upper substrate 3, a heat-conducting layer 2 is filled between the chip 1 and the upper surface of the upper substrate 3, the upper substrate 3 and the lower substrate 5 are connected through a first screw 11, the upper substrate 3 is provided with a screw through hole adapted to the first screw 11, the lower substrate 5 is provided with a threaded hole adapted to the first screw 11, and an insulating sleeve 10 is sleeved between the screw through hole of the upper substrate 3 and the matching surface of the first screw 11; the chip 1 is connected with the upper base body 3 through a second screw 12, the chip 1 is provided with a screw through hole matched with the second screw 12, the upper base body 3 is provided with a threaded hole matched with the second screw 12, and an insulating sleeve 10 is sleeved between the screw through hole of the chip 1 and the matching surface of the screw; the contact area between the chip 1 and the heat conduction layer 2 is set to a1, the contact area between the upper substrate 3 and the insulating heat conduction pad 4 is set to a2, the heat conductivity of the heat conduction layer 2 is set to K1, the heat conductivity of the insulating heat conduction pad 4 is set to K2, a 2: the value of A1 is greater than 1 and less than 2K 1/K2.
Because the thermal resistance of air is high, the heat conduction layer 2 is filled between the chip 1 and the upper surface of the upper base body 3, the heat conduction layer 2 can fill the gap between the chip 1 and the upper surface of the upper base body 3, so that the chip 1 and the upper base body 3 are insulated, the air in the gap can be reduced as much as possible, the resistance of the chip 1 in heat transfer to the upper base body 3 is smaller, the upper base body 3 can receive the heat transferred by the chip 1 after being connected with the chip 1, and the heat exchange is carried out by the surface of the upper base body 3 and the air, so that the temperature of the chip is reduced; insulating heat conduction gasket 4 sets up at last base member 3 under and between base member 5, insulating heat conduction gasket 4 makes and goes up base member 3 and insulate between the base member 5 down, and can be with the heat transfer of last base member 3 down on base member 5, carry out heat exchange through base member 5 and the radiating fin on the base member 5 down and air, further strengthen the radiating effect, go up between base member 3 and the lower base member 5, all adopt screw fixed connection between chip 1 and the last base member 3, and convenient assembling, and the insulating cover 10 that sets, make and be suitable for insulating between the two parts of screwed connection, guarantee from chip 1 to last base member 3, it all insulates each other to go up base member 3 to base member 5 down.
When the bottleneck problem of heat dissipation of the insulated pad of the IGBT chip is solved, the heat conduction area is set according to the heat conduction coefficient proportional relation between the heat conduction layer 2 on the lower surface of the chip 1 and the insulated heat conduction gasket 4 on the lower surface of the upper base body 3, and the comprehensive heat dissipation effect of the radiator is favorably and reasonably improved.
The heat conducting layer 2 is made of heat conducting materials such as heat conducting silicone grease, heat conducting silica gel and the like; the upper substrate 3 to the lower substrate 5 are generally made of aluminum alloy metal. The insulating and heat-conducting gasket 4 is a heat-conducting and insulating material such as a fiber insulating gasket, a ceramic gasket and the like.
Referring to fig. 1 to 6, the mating surface between the upper substrate 3 and the lower substrate 5 may be a mating surface that is easy to assemble, such as a plane, an arc, a V-shaped surface, and the like, and facilitates positioning between the upper substrate 3 and the lower substrate 5. The matching surface between the upper base body 3 and the lower base body 5 is recommended to use a V-shaped matching surface and an arc-shaped matching surface, compared with a plane matching surface, the V-shaped matching surface and the arc-shaped matching surface can improve the high positioning precision of the upper base body 3 and the lower base body 5 and increase the contact area of the upper base body 3 and the lower base body 5, and the V-shaped matching surface and the arc-shaped matching surface can enable the two base bodies to be positioned more easily and quickly when the upper base body 3 and the lower base body 5 are assembled, namely when the upper base body 3 and the lower base body 5 are connected through screws, the upper base body 3 only needs to be placed into a V-shaped groove or an arc-shaped groove of the lower base body 5, then the two ends of the upper base body 3 and the two ends of the lower base body 5 are aligned, and at the; the V-shaped or curved mating surface enhances the tendency of heat to spread around after transfer to the lower substrate 5.
To effectively ensure the insulating effect, the insulating and heat-conducting pad 4 has an overhang with respect to the outer edge of the bottom surface of the upper substrate 3, and the length of the overhang is typically 2mm to 3 mm.
In order to improve the heat dissipation effect, referring to fig. 5, heat dissipation teeth 14 may be additionally arranged on the upper surface of the upper substrate 3 to increase the heat dissipation area of the chip 1; the heat dissipation of the upper base body 3 to the outside is realized.
In order to further effectively ensure the insulation effect, referring to fig. 8, the lower base 5 is provided with a through hole for the second screw 12 to pass through, the through hole is provided as a stepped hole with a large upper end diameter and a small lower end diameter, and a T-shaped insulation sleeve 13 matched with the second screw 12 is sleeved in the stepped hole.
When the chip is applied and implemented on a plurality of chips, referring to fig. 7, the second chip 6 is fixedly arranged on one side of the groove on the substrate top surface of the lower base 5, the third chip 7 is fixedly arranged on the other side of the groove, the second heat conduction layer 8 is filled between the substrate top surface and the second chip 6, and the third heat conduction layer 9 is filled between the substrate top surface and the third chip 7; the vertical plane perpendicular to the length direction of the groove is used as a reference plane, the connection points of the contour line of the groove and the contour line of the top surface of the substrate are respectively set as an M point and an N point, the point where the lowest position of the groove is located is set as a P point, wherein the M point is a point close to one side of the second chip 6, the distance value between the M point and the P point is smaller than that between the N point and the P point, the insulating heat conduction gasket 4 corresponding to the area between the M point and the P point is set as an insulating heat conduction gasket A, and the insulating heat conduction gasket 4 corresponding to the area between the N point and the P point is set as an insulating heat conduction gasket B.
When the heat dissipation power of the second chip 6 is specified to dissipate heat in the specified area (area a in the figure), the heat dissipation power can be realized by the distance from the edge of the upper substrate 3 to the second chip 6 and the distance from the edge of the third chip 7;
when the designated tooth 15 of the second chip 6 in the designated area (area a in the figure) is designated as critical, the heat dissipation power can be realized by the point P of the lowest position of the groove of the lower substrate 5 being close to the designated tooth 15, and the thickness of the insulating and heat-conducting pad a is increased to realize the heat transfer isolation of the lower substrate.
After adopting above-mentioned structural style to implement, the temperature distribution and the heat dissipation of steerable different chips with the heat trend of chip appointed regional heat dissipation, are favorable to when the highest temperature limit of different chips is different, allow the temperature of high temperature resistant chip and the tooth piece region that corresponds metal radiator to be high, and other chip region temperature are low. In the embodiment shown in fig. 7, the heat of the second chip 6 is dissipated to the region a in the figure, and the heat of the chip 1 and the third chip 7 is dissipated to the region B in the figure.
For convenient assembly, effectively guarantee insulating effect simultaneously, the preferred mounting means of second chip 6 and third chip 7 is as follows: the second chip 6 is connected with the lower substrate 5 through a third screw, the second chip 6 is provided with a screw through hole matched with the third screw, the lower substrate 5 is provided with a threaded hole matched with the third screw, and an insulating sleeve 10 is sleeved between the screw through hole of the second chip 6 and the matching surface of the screw; the third chip 7 is connected with the lower base body 5 through a fourth screw, the third chip 7 is provided with a screw through hole matched with the fourth screw, the lower base body 5 is provided with a threaded hole matched with the fourth screw, and an insulating sleeve 10 is sleeved between the screw through hole of the third chip 7 and the matching surface of the screw.
Example 1: referring to fig. 1 and 2, a chip 1(igbt chip) is tightly connected to the upper surface of an upper substrate 3 through a heat conductive layer 2 (silicone layer); the material of the upper substrate 3 is the same as that of the lower substrate 5, and the upper substrate and the lower substrate are both made of aluminum alloy metal. The bottom surface of the upper base body 3 is V-shaped and is tightly connected with the lower base body 5 through an insulating heat-conducting gasket 4 (fiber insulating heat-conducting material), and the lower base body 5 is provided with a prefabricated matched V-shaped groove. The insulating heat conduction gasket 4 exceeds the bottom edge of the upper base body 3 by 2-3 mm, so that the insulation effect is ensured. The base of the heat sink 9 is a flat plate structure, i.e. the thickness is reduced in the area corresponding to the groove of the upper base 3. The substrate thickness H1 of lower base 5 is 4mm, and the substrate thickness of the position that the recess minimum was located is set as H2, H2: h1 has a value of 0.4, i.e. H2 has a value of 1.6 mm; the contact area between the chip 1 and the heat conduction layer 2 is set to a1, the contact area between the upper substrate 3 and the insulating heat conduction pad 4 is set to a2, the heat conductivity of the heat conduction layer 2 is set to K1, the heat conductivity of the insulating heat conduction pad 4 is set to K2, a 2: a1 ═ 2.2
After the mode is adopted for implementation, the heat dissipation effect is as follows: the chip 1 is lowered by 12 degrees.
Example 2: referring to fig. 3, a chip 1(igbt chip) is tightly connected to the upper surface of an upper substrate 3 through a heat conductive layer 2 (silicone layer); the material of the upper substrate 3 is the same as that of the lower substrate 5, and the upper substrate and the lower substrate are both made of aluminum alloy metal. The bottom surface of the upper base body 3 is of an arc-shaped curved surface structure, the lower base body 5 is tightly connected with the upper base body through an insulating heat conduction gasket 4 (fiber insulating heat conduction material), the lower base body 5 is provided with a prefabricated matched arc-shaped groove, the thickness of the position of the arc-shaped groove is kept consistent with the whole thickness of the base plate, and namely the thickness of the base plate in all areas of the lower base body 5 is kept unchanged. The insulating heat conduction gasket 4 exceeds the bottom edge of the upper base body 3 by 2-3 mm, so that the insulation effect is ensured. The depth of the groove corresponding to the lowest position of the arc-shaped groove is set as G1, and the relation between G1 and the thickness H1 of the bottom plate of the lower base 5 is that G1 is 0.4 multiplied by H1. I.e. 5mm for H1 and 2mm for G1. The contact area between the chip 1 and the heat conduction layer 2 is set to a1, the contact area between the upper substrate 3 and the insulating heat conduction pad 4 is set to a2, the heat conductivity of the heat conduction layer 2 is set to K1, the heat conductivity of the insulating heat conduction pad 4 is set to K2, a 2: a1 ═ 2.0.
After the implementation of this mode, the heat dissipation effect is that the temperature of the chip 1 is reduced by 11 degrees.
Example 3: referring to fig. 7, a second chip 6, a chip 1(igbt chip), and a third chip 7 are sequentially disposed on the heat spreader. The second chip 6 is tightly connected with the top surface of the lower base body 5 through a second heat conduction layer 8 (silicone layer); the third chip 7 is tightly connected to the top surface of the lower base 5 through a third heat conductive layer 9 (silicone layer). The chip 1(igbt chip) is tightly connected with the upper surface of the upper base body 3 through the heat conduction layer 2 (silicone layer); the material of the upper substrate 3 is the same as that of the lower substrate 5, and the upper substrate and the lower substrate are both made of aluminum alloy metal. The bottom surface of the upper base body 3 is V-shaped and is tightly connected with the lower base body 5 through an insulating heat-conducting gasket 4 (fiber insulating heat-conducting material), and the lower base body 5 is provided with a prefabricated matched V-shaped groove. The insulating heat conduction gasket 4 exceeds the bottom edge of the upper base body 3 by 2-3 mm, so that the insulation effect is ensured. The minimum distance value between the edge of the second chip 6 and the center of the chip 1 is smaller than the minimum distance value between the edge of the third chip 7 and the center of the chip 1; the vertical plane perpendicular to the length direction of the groove is used as a reference surface, the connection points of the groove contour line and the substrate top surface contour line are respectively set as an M point and an N point, the point where the lowest position of the groove is located is set as a P point, wherein the M point is a point close to one side of the second chip 6, the distance value between the M point and the P point is smaller than that between the N point and the P point, the insulating heat conduction gasket 4 corresponding to the area between the M point and the P point is set as an insulating heat conduction gasket A, the insulating heat conduction gasket 4 corresponding to the area between the N point and the P point is set as an insulating heat conduction gasket B, the thickness of the insulating heat conduction gasket A is 0.3mm, and the thickness of the insulating heat conduction gasket B is 0.15 mm. In addition, in the present embodiment, the substrate thickness H1 of the lower base 5 is 4mm, and the substrate thickness at the position where the lowest groove is located is set to H2, H2: h1 has a value of 0.2, i.e. H2 has a value of 0.8 mm; the contact area between the chip 1 and the heat conduction layer 2 is set to a1, the contact area between the upper substrate 3 and the insulating heat conduction pad 4 is set to a2, the heat conductivity of the heat conduction layer 2 is set to K1, the heat conductivity of the insulating heat conduction pad 4 is set to K2, a 2: a1 ═ 4.2. The minimum distance between the edge of the second chip 6 and the edge of the third chip 7 is L0, and the minimum distance between the center of the chip 1(igbt chip) and the second chip 6 is L1. The minimum distance L2 between the center of the chip 1(igbt chip) and the third chip 7 is L0-L1. Wherein L0 is 38mm, and L1 is 12 mm.
After the implementation of this embodiment, the heat dissipation power of the second chip 6 is concentrated in the region a for heat dissipation, and the chip 1(igbt chip) and the third chip 7 are concentrated in the region B for heat dissipation. Practice proves that under the condition that the heating powers of the second chip 6, the chip 1(igbt chip) and the third chip 7 are respectively 22W, 12W and 13W, the temperature of the second chip 6 rises by 5 ℃, the temperature of the chip 1(igbt chip) falls by 15 ℃, and the temperature of the third chip 7 falls by 3 ℃, so that the aim of controlling the distributed temperature is fulfilled.
Claims (8)
1. Chip heat radiation structure, including base member and chip (1), its characterized in that: the heat-conducting chip comprises a substrate and a heat-conducting layer, wherein the substrate comprises an upper substrate (3) and a lower substrate (5) which are fixedly connected, a heat-radiating fin is arranged on the lower substrate (5), a chip (1) is fixed on the upper surface of the upper substrate (3), an insulating heat-conducting gasket (4) is filled between the lower surface of the upper substrate (3) and the upper surface of the lower substrate (5), and a heat-conducting layer (2) is filled between the chip (1) and the upper surface of the upper substrate (3);
the upper base body (3) is connected with the lower base body (5) through a first screw (11), a screw through hole matched with the first screw (11) is formed in the upper base body (3), a threaded hole matched with the first screw (11) is formed in the lower base body (5), and an insulating sleeve (10) is sleeved between the screw through hole of the upper base body (3) and the matching surface of the first screw (11);
the chip (1) is connected with the upper base body (3) through a second screw (12), the chip (1) is provided with a screw through hole matched with the second screw (12), the upper base body (3) is provided with a threaded hole matched with the second screw (12), and an insulating sleeve (10) is sleeved between the screw through hole of the chip (1) and the matching surface of the screw;
the contact area of the chip (1) and the heat conduction layer (2) is set to be A1, the contact area of the upper base body (3) and the insulating heat conduction pad (4) is set to be A2, the heat conduction coefficient of the heat conduction layer (2) is set to be K1, the heat conduction coefficient of the insulating heat conduction pad (4) is set to be K2, A2: the value of A1 is greater than 1 and less than 2K 1/K2.
2. The chip heat dissipation structure of claim 1, wherein: the matching surface of the upper base body (3) and the lower base body (5) is V-shaped or arc-shaped.
3. The chip heat dissipation structure of claim 2, wherein: lower base member (5) are including the base plate that thickness is H1, and base plate top surface middle part position is equipped with V font or curved recess, and the base plate thickness of the lowest position of recess is set for H2, H2: the value of H1 is greater than 0.15.
4. The chip heat dissipation structure of claim 3, wherein: a second chip (6) is fixedly arranged on one side of the groove on the top surface of the substrate, a third chip (7) is fixedly arranged on the other side of the groove, a second silicone grease heat-conducting layer (8) is filled between the top surface of the substrate and the second chip (6), and a third silicone grease heat-conducting layer (9) is filled between the top surface of the substrate and the third chip (7);
a vertical plane perpendicular to the length direction of the groove is taken as a reference plane, the connection points of the contour line of the groove and the contour line of the top surface of the substrate are respectively set as M point and N point, the point at which the lowest position of the groove is located is set as P point, wherein the M point is a point close to one side where the second chip (6) is located, the distance value between the M point and the P point is smaller than the distance value between the N point and the P point,
setting the insulating heat conduction gasket (4) corresponding to the region between the M point and the P point as an insulating heat conduction gasket A, and setting the insulating heat conduction gasket (4) corresponding to the region between the N point and the P point as an insulating heat conduction gasket B;
when the heat dissipation power of the second chip (6) is appointed to dissipate heat in an appointed area, the heat dissipation power is realized by the distance from the upper substrate (3) to the edge of the second chip (6) and the distance from the upper substrate to the edge of the third chip (7);
when the designated tooth sheet (15) of the heat dissipation power of the designated second chip (6) in the designated area is critical, the heat dissipation power is realized by the fact that the position of the P point where the lowest position of the groove of the lower base body (5) is located is close to the designated tooth sheet (15), and meanwhile, the thickness of the insulating heat conduction gasket A is increased to realize heat transfer isolation of the lower base body (5).
5. The chip heat dissipation structure of claim 4, wherein: the second chip (6) is connected with the lower base body (5) through a third screw, a screw through hole matched with the third screw is formed in the second chip (6), a threaded hole matched with the third screw is formed in the lower base body (5), and an insulating sleeve (10) is sleeved between the screw through hole of the second chip (6) and the matching surface of the screw;
the third chip (7) is connected with the lower base body (5) through a fourth screw, a screw through hole matched with the fourth screw is formed in the third chip (7), a threaded hole matched with the fourth screw is formed in the lower base body (5), and an insulating sleeve (10) is sleeved between the screw through hole of the third chip (7) and the matching surface of the screw.
6. The chip heat dissipation structure according to any one of claims 1 to 5, wherein: the lower base body (5) is provided with a through hole for the second screw (12) to pass through, the through hole is a step hole with a large upper end diameter and a small lower end diameter, and a T-shaped insulating sleeve (13) matched with the second screw (12) is sleeved in the step hole.
7. The chip heat dissipation structure according to any one of claims 1 to 5, wherein: the insulating heat-conducting gasket (4) has an overhang relative to the outer edge of the bottom surface of the upper substrate (3).
8. The chip heat dissipation structure according to any one of claims 1 to 5, wherein: the upper surface of the upper base body (3) is provided with heat dissipation teeth (14).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011302000.9A CN112420636B (en) | 2020-11-19 | 2020-11-19 | Chip heat radiation structure |
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| CN202011302000.9A CN112420636B (en) | 2020-11-19 | 2020-11-19 | Chip heat radiation structure |
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| CN112420636B CN112420636B (en) | 2022-09-06 |
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|---|---|
| CN112420636B (en) | 2022-09-06 |
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