CN209708964U - Power module and electronic equipment - Google Patents
Power module and electronic equipment Download PDFInfo
- Publication number
- CN209708964U CN209708964U CN201920882251.5U CN201920882251U CN209708964U CN 209708964 U CN209708964 U CN 209708964U CN 201920882251 U CN201920882251 U CN 201920882251U CN 209708964 U CN209708964 U CN 209708964U
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- substrate
- groove body
- face
- power module
- filler
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- 239000000758 substrate Substances 0.000 claims abstract description 203
- 239000000945 filler Substances 0.000 claims abstract description 45
- 229910052802 copper Inorganic materials 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 230000017525 heat dissipation Effects 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 210000002421 cell wall Anatomy 0.000 description 10
- 239000004519 grease Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 244000247747 Coptis groenlandica Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model provides a power module and electronic equipment, this power module include the base plate, set up the chip on the base plate. The substrate is provided with a first surface and a second surface which are opposite, and the chip is arranged on the first surface of the substrate. In order to reduce the deformation degree of the base plate when the chip is arranged on the base plate, a groove body is arranged on the second surface of the base plate, the groove body is filled with filler, and the thermal expansion chip of the base plate is smaller than the thermal expansion coefficient of the filler. In the above scheme, the groove body on the second surface of the substrate is filled with the filler with a large thermal expansion coefficient, so that when the chip is arranged on the substrate, the warping degree of the substrate is reduced, the substrate and the radiator can be connected in a good heat conduction manner, and the heat dissipation effect is improved.
Description
Technical field
The utility model relates to technical field of electric appliances more particularly to a kind of power modules and electronic equipment.
Background technique
IGBT module is by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) by specific
Circuit bridge encapsulation made of modularized semiconductor product.By the working mechanism of IGBT it is found that as the inside IGBT PN junction (PN
Junction when) reverse biased increases, thermal losses caused by reverse current causes junction temperature to rise, and the raising of junction temperature causes reversely again
Electric current increases, and IGBT is switching device, repeats to open with high-frequency and turns off this process, if cooling device cannot be timely
Transfer heat away from, junction temperature rise and reverse current increase will alternate cycles go down.If things go on like this, thermal accumlation, most
Whole PN junction punctures, and this breakdown is the referred to as thermal breakdown as caused by fuel factor.The most common failure phenomenon in practical application
It is exactly thermal failure, therefore the cooling device of IGBT module seems of crucial importance.
The copper base of IGBT module is exactly a kind of good type of cooling, and such as Fig. 1, module is from lower to upper namely for right
The radiator 1 of igbt chip heat dissipation, thermal grease conduction 2, copper base 3, DCB substrate 4 (Direct Copper Bonding, direct copper key
Close substrate), chip 5, bonding line 6, silica gel 7, bus terminal 8.In order to preferably radiate, copper base 3 must have good with radiator 1
Good contact, but when welding procedure in encapsulation process, because the mechanism expanded with heat and contract with cold will cause showing for 3 indent of copper base
As just will appear the phenomenon that very big gap causes heat dissipation uneven when installing in this way with radiator 1.To solve this phenomenon, commonly use
Set-up mode can make the copper base 3 with certain radian, in welding procedure, 3 surface of copper base is flattened by convex in this way.But
It is the bad control of indent degree when due to welding procedure, the also bad appraisal of the radian size of copper base 3, therefore its work
Skill is complicated, at high cost.
Utility model content
The utility model provides a kind of power module and electronic equipment, to reduce the warpage degree of substrate, make radiator with
It being capable of good thermally conductive connection between substrate.
In a first aspect, the utility model provides a kind of power module, which includes substrate, is disposed on the substrate
Chip.Wherein, substrate has opposite the first face and the second face, and chip is arranged on the first face of substrate.To reduce core
The warpage degree of substrate when piece is disposed on the substrate is provided with groove body in the second face of substrate, and filler is filled in groove body,
And the thermal expansion chip of substrate is less than the thermal expansion coefficient of filler.
In above-mentioned scheme, by filling the biggish filler of thermal expansion coefficient, In in the groove body in the second face of substrate
When chip is disposed on the substrate, the warpage degree of substrate is reduced, so that making can be good thermally conductive between substrate and radiator
Connection, improves the heat dissipation effect of radiator.
In a specific embodiment, substrate has two opposite long sides and connect respectively with two long sides
And two opposite short sides, to simplify the structure of substrate.
In a specific embodiment, two long sides opposite on groove body through substrate make filler edge and substrate
The parallel direction of short side be evenly distributed on the second face of substrate, reduce the warpage degree of substrate.
In a specific embodiment, the axis of groove body in the longitudinal direction is conllinear with the line of symmetry of two short sides,
To make to be filled in the middle position that the intracorporal filler of slot is located at substrate, to reduce the warpage degree of substrate.
In a specific embodiment, the width of groove body is d3, and the length d2 of the width d3 of groove body and substrate is full
Foot: d3≤1/2d2.Wherein, the length of substrate refers to the length of long side, to reduce the warpage degree of substrate.
In a specific embodiment, the number of groove body is multiple, and multiple groove bodies are along vertical with the long side of substrate
Direction be alternatively arranged, to reduce the warpage degree of substrate.
In a specific embodiment, the first face of substrate is welded with substrate, and chip setting deviates from base on substrate
The one side of plate.
In a specific embodiment, substrate is copper base, to improve the heat dissipation performance of substrate.
In a specific embodiment, filler is aluminium flake, in order to be arranged, and saves cost.
In a specific embodiment, the thickness of filler is less than or equal to the half of substrate thickness, to reduce substrate
Warpage degree.
In a specific embodiment, substrate with a thickness of 3-8um, in order to be arranged.
In a specific embodiment, the surface of substrate and filler is coated with nickel coating, with protective substrate and filling
Object.
In a specific embodiment, nickel coating with a thickness of 3-10um, in order to be arranged.
Second aspect, the utility model additionally provide a kind of electronic equipment, which includes any one of the above function
Rate module and hot linked radiator is led with the second face of substrate.To reduce the warpage degree of substrate, make substrate and radiator
Between can good thermally conductive connection, to improve heat dissipation effect.
In a specific embodiment, pass through the thermally conductive connection of heat-conducting silicone grease between the second face and radiator of substrate,
Hot linked stability is led between substrate and radiator, to improve heat dissipation effect to improve.
Detailed description of the invention
Fig. 1 is a kind of cross-sectional view of power module in the prior art；
Fig. 2 is a kind of cross-sectional view of power module provided by the embodiment of the utility model；
Fig. 3 be Fig. 2 shows power module in substrate front view；
Fig. 4 be Fig. 2 shows power module in substrate top view.
Appended drawing reference:
The first face 11- substrate 111- the second face 112-
113 114- short side 12- substrate 121- insulating layer of 113- long side
122- copper wiring layer 13- chip 14- pin
15- encapsulated layer 16- bonding line 20- groove body 21- notch
22- cell wall 23- slot bottom 30- filler
40- radiator 41- heat-conducting silicone grease
Specific embodiment
It is practical to this below in conjunction with attached drawing in order to keep the purpose of this utility model, technical solution and advantage clearer
It is novel to be described in further detail.
In order to facilitate power module provided by the embodiment of the utility model is understood, illustratively its application scenarios first.It should
Power module is specifically as follows IGBT module.Power module provided by the embodiment of the utility model is carried out with reference to the accompanying drawing detailed
Thin description.
With reference to Fig. 2, power module provided by the embodiment of the utility model includes a substrate 11, which specifically can be with
For copper base, aluminum substrate, silicon carbide aluminum substrate etc..When substrate 11 is arranged, substrate 11 is a plate body structure.It, should with reference to Fig. 3
Substrate 11 has opposite the first face 111 and the second face 112.As shown in Figures 3 and 4, substrate 11 has two opposite long sides
It 113 and is separately connected with two long sides 113 and two opposite short sides 114, makes the hardened of 11 1 strips of substrate
Structure, to simplify structure, convenient for setting.Wherein, the width d1 of substrate 11 refers to vertical between two long sides 113 of substrate 11
Distance, the i.e. length of the short side 114 of substrate 11；The length d2 of substrate 11 refers to vertical between two short sides 114 of substrate 11
Distance, the i.e. length of the long side 113 of substrate 11.Wherein, d1 < d2.It should be understood that the above-mentioned substrate 11 of illustrate only
Several ways, in addition to this, substrate 11 can also be other set-up modes.
As shown in Fig. 2, being provided with chip 13 on the first face 111 of substrate 11.Chip 13 be specifically as follows igbt chip,
FWD chip etc..And the number of chip 13 can be 1,2,4,6,8,12,14 etc..As shown in Fig. 2, substrate
There are two chips 13 for setting on 11 the first face 111.It should be understood that the number of chip 13 is not limited to above-mentioned two shown
The set-up mode of a chip 13.
When by the setting of chip 13 on the substrate 11, chip 13 can be directly welded at base using modes such as welding, bondings
On first face 111 of plate 11, one layer of substrate 12 can also be set on the substrate 11, chip 13 is arranged on substrate 12.With reference to
Fig. 2, is provided with one layer of substrate 12 on the first face 111 of substrate 11, and chip 13 is arranged on substrate 12.Wherein, substrate 12 can
Think such as, but not limited to DCB substrate.With reference to Fig. 2, substrate 12 includes one layer exhausted for connecting with the first face 111 of substrate 11
Edge layer 121, the material of the insulating layer 121, which has, to be ceramics, to realize the electric insulation between chip 13 and substrate 11.After
Continuous to refer to Fig. 2, substrate 12 further includes that the copper wiring layer 122 for deviating from 11 one side of substrate on insulating layer 121 is arranged in, copper wiring layer
122 for the circuit bridge between chip 13.When substrate 12 to be arranged in the first face 111 of substrate 11, substrate 12 passes through weldering
The mode of connecing is welded on the first face 111 of substrate 11, specifically, having one layer of use between substrate 12 and substrate 11 with reference to Fig. 2
In the layer of connection substrate 12 and substrate 11, to realize the connection of substrate 12 Yu substrate 11.It is arranged by chip 13 in substrate 12
When upper, chip 13 can be arranged on substrate 12 by bonding way, can also be arranged on substrate 12 by welding manner.Ginseng
Examine Fig. 2, with one layer for connecting the layer of chip 13 Yu substrate 12 between chip 13 and substrate 12, with realize chip 13 and
Electrical connection between substrate 12, and make to be electrically connected between chip 13 by the copper wiring layer 122 on substrate 12.With reference to Fig. 2,
Each chip 13 can also be electrically connected by bonding line 16 with the copper wiring layer 122 on substrate 12, realize chip 13 and thin copper film
Electrical connection between layer 122.Wherein, bonding line 16 is specifically as follows copper wire, aluminum steel, silver wire, gold thread etc..
With reference to Fig. 2, it is additionally provided on each chip 13 for the pin 14 with external electrical connections.Wherein, pin 14 is
In the prior art conventionally used for making the pin 14 of chip 13 Yu external electrical connections.The side that each pin 14 can be fastened by screw
Formula is fixed on the shell of power module.
With continued reference to Fig. 2, one layer is provided on the first face 111 of substrate 11 for encapsulating chip 13, bonding line 16, copper
The encapsulated layer 15 of wiring layer 122, to protect the circuit of chip 13 and internal electrical connection, make bonding line 16 and copper wiring layer 122 with
Exterior insulation.With continued reference to Fig. 2, each 14 part of pin is exposed to outside encapsulated layer 15, realizes that chip 13 is electrically connected with external.
Wherein, it can be silica gel, resin etc. that the material of encapsulated layer 15, which has, can also be the material in the prior art for encapsulation.
With reference to Fig. 2, Fig. 3 and Fig. 4, it is provided with groove body 20 on the second face 112 of substrate 11, is filled out in groove body 20
Object 30 is filled, and the thermal expansion coefficient of filler 30 is greater than the thermal expansion coefficient of substrate 11.Chip 13 is being welded on substrate 11
When the first face 111, the temperature in the first face 111 of substrate 11 is increased, and due to thermal expansion and contraction principle, the first face 111 of substrate 11 is swollen
It is swollen.Simultaneously because the heating conduction of substrate 11 is preferable, 11 first face 111 of substrate can carry out heat transfer to the second face 112, to make
The temperature in the second face 112 of substrate 11 increases, and the second face 112 of substrate 11 is made also to start to expand.But due to the first of substrate 11
Face 111 is closer apart from layer, to make the temperature in the first face 111 of substrate 11 than the temperature in the second face 112 of substrate 11
Degree is high.Keep the degrees of expansion in 11 first face 111 of substrate high compared with the degrees of expansion in the second face 112, so that it is downward to have substrate 11
The trend of warpage.And since the thermal expansion coefficient of filler 30 is greater than the thermal expansion coefficient of substrate 11, to make filler 30
Swell increment is bigger than the swell increment of substrate 11, improves the degrees of expansion in the second face 112 of substrate 11, makes the first face 111 of substrate 11
And second face 112 differential expansion reduce, so that the warpage degree of substrate 11 be made to reduce.
In specifically setting groove body 20, groove body 20 has two opposite notches 21, and two notches 21 are located at two
In the long side 113 of substrate 11, i.e. two long sides 113 opposite on 20 through substrate 11 of groove body.Specifically, with reference to Fig. 3 and Fig. 4,
Two notches 21 are located in two long sides 113 opposite on substrate 11, to make the filler 30 being filled in groove body 20
Length (filler 30 along with the length in 114 parallel direction of short side) it is equal with the width of substrate 11.Due to the shape of substrate 11
Shape is elongate in shape, and when warpage occurs, the warpage trend in the width direction of substrate 11 is more consistent, i.e., substrate 11 is in width
Middle section warpage synchronous with marginal portion on direction.By keeping the length of filler 30 equal with the width of substrate 11, with
Filler 30 prevents along the second face that the mode parallel with the short side 114 of substrate 11 is evenly distributed on substrate 11 in substrate 11
And after filler 30 expands, the middle section of substrate 11 and the not concordant phenomenon in marginal portion, to reduce the warpage journey of substrate 11
Degree.
As shown in figure 4, groove body 20 has two opposite cell walls 22, and the long side 113 of each cell wall 22 and substrate 11 is hung down
Directly, make the length direction of groove body 20 vertical with the long side 113 of substrate 11, make the filler 30 being filled in groove body 20 along substrate 11
Width direction extend, to prevent the inconsistent situation of warpage degree in the direction of the width of substrate 11.It should be understood that slot
Each cell wall 22 in two cell walls 22 of body 20 is not limited to the set-up mode vertical with long side 113, can also use other
Set-up mode.Such as each cell wall 22 and 113 near normal of long side of groove body 20 can be set.
With continued reference to Fig. 2, the axis of groove body 20 in the longitudinal direction is conllinear with the line of symmetry of two short sides 114.Specifically,
The vertical range and another cell wall of a short side 114 in a cell wall 22 distance, two short sides 114 in two cell walls 22
22 vertical range apart from another short side 114 is equal, that is, the filler 30 being filled in groove body 20 is located at two of substrate 11
Middle position between short side 114.Since substrate 11 is when occurring warpage, the maximum position of warpage is appeared in substrate 11
Between part, the middle position in the second face 112 by the way that filler 30 to be arranged in substrate 11, to reduce the warpage journey of substrate 11
Degree.It should be understood that the setting position of groove body 20 is not limited to setting for the above-mentioned middle position that substrate 11 is arranged in shown
Mode is set, in addition to this it is possible to using other set-up modes.
With reference to Fig. 4, the width (vertical range between the opposite cell wall 22 of two of groove body 20) of groove body 20 is d3, and slot
The width d3 of body 20 and the length d2 of substrate 11 meet: d3≤1/2d2.Specifically, the width d3 that groove body 20 can be set is equal to
1/2d2,1/3d2,1/4d2 etc. are less than or equal to the arbitrary value of 1/2d2.Since substrate 11 is when occurring warpage, the maximum position of warpage
Set the middle section for appearing in substrate 11, i.e., on the length direction of substrate 11, closer to the edge of substrate 11, substrate 11
Warpage degree is smaller, to prevent from causing the degrees of expansion in the second face 112 of substrate 11 to be more than first because filler 30 is wide
The degrees of expansion in face 111, to reversed warping phenomenon occur.
With reference to such as Fig. 2 and Fig. 3, the thickness of filler 30 is less than or equal to the half of the thickness of substrate 11, specifically, can set
The thickness for setting filler 30 is equal to the half of thickness of substrate 11, the thickness of filler 30 be equal to substrate 11 thickness three/
One, it is any less than or equal to the half of 11 thickness of substrate to be equal to a quarter of thickness of substrate 11 etc. for the thickness of filler 30
Value.In specific setting, the depth of settable groove body 20 (second face 112 of the slot bottom 23 of groove body 20 apart from substrate 11 it is vertical
Distance) be less than or equal to substrate 11 thickness half, so that the thickness of the filler being filled in groove body 20 30 be made to be less than or equal to
The half of the thickness of substrate 11.Setting when, can be set substrate 11 with a thickness of 3-8um, specifically, the thickness of substrate 11 can
Think the arbitrary value between 3-8um such as 3um, 4um, 5um, 6um, 7um, 8um.
In specifically setting filler 30, filler 30 can be the sheet metals such as aluminium flake, copper sheet.The shape of filler 30 can
Think cube, such as can be cuboid.When being arranged filler 30 in groove body 20, filler 30 can be bonded in
In groove body 20, filler 30 can also be expressed in groove body 20 by way of elastic conjunction.It should be understood that filler
30 material is not limited to as aluminium flake, as long as the thermal expansion coefficient for meeting filler 30 is greater than setting for the thermal expansion coefficient of substrate 11
Mode is set, all within the protection scope of the utility model embodiment.
It should be noted that the number of groove body 20 is not limited to above-mentioned one shown, the number of groove body 20 can also be 2
It is a, 3,4,5 etc. it is multiple.When the number of groove body 20 is multiple, multiple groove bodies 20 are along vertical with the long side 113 of substrate 11
Direction be alternatively arranged.When the number of groove body 20 is 3 or 3 or more, 3 or 3 or more groove bodies 20 can be uniform
It is arranged on the second face of substrate 11；It heterogeneous can also be arranged on the second face of substrate 11, for example, 3 or 3 or more
Arrangement of the groove body 20 in the middle position closer to substrate 11 it is closer, 20 row of groove body further away from the middle position of substrate 11
What is arranged is more sparse.
Furthermore it is possible to plate one layer of nickel coating on substrate 11 and 30 surface of filler, to prevent substrate 11 and filler 30
Oxidation corrosion, thus protective substrate 11 and filler 30.In specific setting, the thickness of nickel coating may be configured as 3-10um, tool
Body, the thickness of nickel coating can be any between 3-10um for 3um, 4um, 5um, 6um, 7um, 8um, 9um, 10um etc.
Value.
By filling the biggish filler 30 of thermal expansion coefficient in the groove body 20 in 11 second face 112 of substrate, by chip
13 setting on the substrate 11 when, reduce the warpage degree of substrate 11, so that making can be good between substrate 11 and radiator 40
Thermally conductive connection, improve radiator 40 heat dissipation effect.
In addition, the utility model embodiment additionally provides a kind of electronic equipment, with reference to Fig. 2, which includes above-mentioned
Any one power module and hot linked radiator 40 is led with the second face 112 of substrate 11, to reduce the warpage of substrate 11
Degree, make between substrate 11 and radiator 40 can good thermally conductive connection, to improve heat dissipation effect.Wherein, radiator 40
For the radiator for radiating to chip 13 conventional in the prior art.
When fixing on the substrate 11 radiator 40, with reference to Fig. 2, radiator 40 is fixed in such a way that screw fastens
On second face 112 of substrate 11.It should be understood that the fixed mode on the substrate 11 of radiator 40 is not limited to screw fastening
Mode, in addition to this it is possible to using other set-up modes.
With reference to Fig. 2, pass through the thermally conductive connection of heat-conducting silicone grease 41 between the second face 112 of substrate 11 and radiator 40.Specifically set
When setting, one layer of heat-conducting silicone grease 41 is coated in the second face 112 of substrate 11 first, radiator 40 is fixed on the of substrate 11 later
Two faces 112.By the heat-conducting silicone grease 41 of setting, with improve led between substrate 11 and radiator 40 hot linked stability, to
Improve heat dissipation effect.
More than, only specific embodiment of the present utility model, but protection scope of the utility model is not limited thereto,
Anyone skilled in the art within the technical scope disclosed by the utility model, can readily occur in variation or replace
It changes, should be covered within the scope of the utility model.Therefore, the protection scope of the utility model should be with claim
Subject to protection scope.
Claims (10)
1. a kind of power module characterized by comprising
Substrate with the first opposite face and the second face；
Chip on first face of the substrate is set；
Wherein, the second face of the substrate is provided with groove body, is filled with filler in the groove body；And the thermal expansion of the substrate
Coefficient is less than the thermal expansion coefficient of the filler.
2. power module as described in claim 1, which is characterized in that the substrate has opposite two long sides, Yi Jifen
It is not connect with described two long sides and two opposite short sides.
3. power module as claimed in claim 2, which is characterized in that it is long that the groove body penetrates through opposite on the substrate two
Side.
4. power module as claimed in claim 3, which is characterized in that the axis of the groove body in the longitudinal direction and described two
The line of symmetry of a short side is conllinear.
5. power module as claimed in claim 4, which is characterized in that the width of the groove body is d3；And the width of the groove body
The length d2 for spending d3 and the substrate meets: d3≤1/2d2；Wherein, the length of the substrate refers to the length of the long side.
6. power module as claimed in claim 3, which is characterized in that the number of the groove body is multiple, and the multiple slot
Body is alternatively arranged along the direction vertical with the long side of the substrate.
7. power module as described in claim 1, which is characterized in that it is thick that the thickness of the filler is less than or equal to the substrate
The half of degree.
8. power module as described in claim 1, which is characterized in that it is welded with substrate on the first face of the substrate, it is described
Chip setting deviates from the one side of the substrate over the substrate.
9. power module as described in claim 1, which is characterized in that the substrate is copper base, and the filler is aluminium flake.
10. a kind of electronic equipment, which is characterized in that including such as described in any item power modules of claim 1-9 and with institute
Lead hot linked radiator in the second face for stating substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920882251.5U CN209708964U (en) | 2019-06-12 | 2019-06-12 | Power module and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920882251.5U CN209708964U (en) | 2019-06-12 | 2019-06-12 | Power module and electronic equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209708964U true CN209708964U (en) | 2019-11-29 |
Family
ID=68650711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920882251.5U Active CN209708964U (en) | 2019-06-12 | 2019-06-12 | Power module and electronic equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209708964U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110164826A (en) * | 2019-06-12 | 2019-08-23 | 珠海格力电器股份有限公司 | Power module and electronic equipment |
-
2019
- 2019-06-12 CN CN201920882251.5U patent/CN209708964U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110164826A (en) * | 2019-06-12 | 2019-08-23 | 珠海格力电器股份有限公司 | Power module and electronic equipment |
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