JP2002198477A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JP2002198477A
JP2002198477A JP2000391981A JP2000391981A JP2002198477A JP 2002198477 A JP2002198477 A JP 2002198477A JP 2000391981 A JP2000391981 A JP 2000391981A JP 2000391981 A JP2000391981 A JP 2000391981A JP 2002198477 A JP2002198477 A JP 2002198477A
Authority
JP
Japan
Prior art keywords
semiconductor chip
screw
semiconductor
semiconductor device
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000391981A
Other languages
Japanese (ja)
Inventor
Takeshi Maekawa
剛 前川
Seiji Matsui
政治 松井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Original Assignee
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Priority to JP2000391981A priority Critical patent/JP2002198477A/en
Publication of JP2002198477A publication Critical patent/JP2002198477A/en
Pending legal-status Critical Current

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a reliable semiconductor device in which such small and low-cost semiconductor chip as a IGBT can be used for good workability in assembling and the like and for assured heat dissipating characteristics, by solving problems related to a semiconductor device of a conventional heat dissipating structure, especially the one in which a semiconductor chip comprises an insulating gate type bipolar transistor(IGBT), where the semiconductor chip rises because it is directly fitted to a fixed member with a screw and the like, otherwise the resin of semiconductor chips cracks when the screw or the like is excessively tightened. SOLUTION: A fixing member 1 such as a screw fixes an elastic member 11 which contacts a semiconductor chip 2 by a surface opposite to the surface of the semiconductor chip 2 which faces a heat dissipating member 4, to provide a compressing force, so that the semiconductor chip 2 is pressurized toward the heat dissipating member 4 by an even surface pressure. An insulating sheet 3 is provided away from the fixing member 1 such as a screw, with no hole opened through which a fixing member such as a screw which can cause a short circuit is inserted.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、放熱構造を有する
半導体装置、特に半導体チップが絶縁ゲート型バイポー
ラトランジスタ(IGBT)であるものに関するものであ
る。
The present invention relates to a semiconductor device having a heat dissipation structure, and more particularly to a semiconductor device in which a semiconductor chip is an insulated gate bipolar transistor (IGBT).

【0002】[0002]

【従来の技術】従来IGBTのような電力スイッチングデバ
イスは、その高速大電力動作による発熱を逃がすために
放熱部材に直接デバイスをねじ止めする構造が取られて
いる。放熱構造を有する半導体装置の代表的な従来例を
図4に示す。図4において、固定部材1は半導体チップ
2を絶縁シート3を介して放熱部材4に固定する部材
で、代表的にはねじ等である。ねじ等の固定部材1を通
すため、半導体チップ2に穴5、絶縁シート3に穴6が
開けられている。なお半導体チップとは一般にトランジ
スタなどの個別半導体のチップやモノリシック半導体集
積回路のチップを指すときに用いられるが、ここでは幅
広く2以上のモノリシック半導体LSIを含むマルチチッ
プ集積回路や、半導体チップ以外のデバイスを含むハイ
ブリッド集積回路なども包含して、半導体素子をふくむ
ものが1つのチップ状になっているものを広く指し、本
発明では特にモールドIGBTについて従来例との対比も含
め詳しく説明するが、これに限られるものではない。図
4において半導体チップ2が例えばモールドIGBTの場合
について述べると、エミッタ端子7、コレクタ端子8、
ゲート端子9を有している。また、これら回路基板と接
続される外部端子とは別に、IGBTのエミッタ電極10は
モールドの背面にむき出しにされている。
2. Description of the Related Art Conventionally, a power switching device such as an IGBT has a structure in which a device is directly screwed to a heat radiating member in order to release heat generated by its high-speed and large-power operation. FIG. 4 shows a typical conventional example of a semiconductor device having a heat dissipation structure. In FIG. 4, a fixing member 1 is a member for fixing a semiconductor chip 2 to a heat radiating member 4 via an insulating sheet 3, and is typically a screw or the like. A hole 5 is formed in the semiconductor chip 2 and a hole 6 is formed in the insulating sheet 3 for passing the fixing member 1 such as a screw. Note that a semiconductor chip is generally used when referring to an individual semiconductor chip such as a transistor or a monolithic semiconductor integrated circuit chip. Here, however, a wide variety of multichip integrated circuits including two or more monolithic semiconductor LSIs and devices other than semiconductor chips are used. Including hybrid integrated circuits, etc., broadly refers to those in which a semiconductor element is included in a single chip, and in the present invention, in particular, a mold IGBT will be described in detail including a comparison with a conventional example. It is not limited to. Referring to the case where the semiconductor chip 2 is, for example, a molded IGBT in FIG. 4, the emitter terminal 7, the collector terminal 8,
It has a gate terminal 9. In addition to the external terminals connected to these circuit boards, the emitter electrode 10 of the IGBT is exposed on the back of the mold.

【0003】この構造において作用を説明する。モール
ドIGBTにおいて、エミッタ端子7を0V(GND)に、コレク
タ端子8をたとえば+216Vに設定し、ゲート端子9
を制御して高速電力スイッチング動作を行わせるとき、
その動作発熱は、モールド背面のむき出しのエミッタ電
極10に伝えられる。ここで固定部材1は、モールドIG
BTを絶縁シート3を介して放熱部材4に直接しっかり固
定するので、モールドIGBTの背面むきだしエミッタ電極
10は絶縁シート3を介して熱伝導性の良い例えば金属
材料からなる放熱部材4に密着されて放熱が行われる。
絶縁シート3は、むき出しのエミッタ電極10と例えば
金属材料からなる放熱部材4を電気的に絶縁している。
The operation of this structure will be described. In the molded IGBT, the emitter terminal 7 is set to 0 V (GND), the collector terminal 8 is set to, for example, +216 V, and the gate terminal 9 is set.
To control high-speed power switching operation,
The operating heat is transmitted to the exposed emitter electrode 10 on the back of the mold. Here, the fixing member 1 is a mold IG
Since the BT is directly and firmly fixed to the heat radiating member 4 via the insulating sheet 3, the exposed back surface of the molded IGBT is closely attached to the heat radiating member 4 made of, for example, a metal material having good heat conductivity through the insulating sheet 3. Heat is dissipated.
The insulating sheet 3 electrically insulates the exposed emitter electrode 10 from the heat dissipation member 4 made of, for example, a metal material.

【0004】また特開平8−236667には、半導体
チップを搭載した絶縁板と、前記半導体チップの周囲を
取り囲む樹脂ケースと、絶縁板を取りつけた放熱板とを
有する半導体装置において、前記絶縁板を前記放熱板に
取り付ける手段として、前記樹脂ケースを用いて前記絶
縁板を前記放熱板に押し付ける構造を有している半導体
装置を提案しており、その発明の実施形態では前記樹脂
ケースをバネを介してボルトで放熱板にむけて押し付け
ている。さらに特開2000−299419において、
半導体チップを搭載した基板を、該基板の両端部に押圧
力を加えて放熱部材に圧接させる半導体装置において、
前記基板を前記放熱部材への圧接側に凸となるように湾
曲形成したことを特徴とする半導体装置を提案し、その
発明の実施形態では、基板の両端部を板ばねにより押圧
しており、板ばねはねじで放熱部材にしめつけられてい
る。
Japanese Patent Laid-Open Publication No. Hei 8-236667 discloses a semiconductor device having an insulating plate on which a semiconductor chip is mounted, a resin case surrounding the semiconductor chip, and a heat sink attached with the insulating plate. As means for attaching to the radiator plate, a semiconductor device having a structure in which the insulating plate is pressed against the radiator plate using the resin case has been proposed.In an embodiment of the present invention, the resin case is connected via a spring. Bolts against the heat sink. Further, in JP-A-2000-299419,
In a semiconductor device in which a substrate on which a semiconductor chip is mounted is pressed against both ends of the substrate by applying a pressing force to a heat radiating member,
The present invention proposes a semiconductor device characterized in that the substrate is formed so as to be curved toward the pressure contact side of the heat radiating member, and in the embodiment of the invention, both ends of the substrate are pressed by leaf springs. The leaf spring is fastened to the heat radiating member with a screw.

【0005】[0005]

【発明が解決しようとする課題】これら前述半導体装置
のうち図4の従来例では、放熱部材に例えばモールドIG
BTなどの半導体チップを直接ねじ等の固定部材で取り付
ける構造であるため、ねじ等が緩むことによる半導体チ
ップが浮く、またはねじ等の締め付け過剰により半導体
チップの樹脂にクラックが生じる問題があった。
In the prior art shown in FIG. 4 of the above-mentioned semiconductor devices, for example, a mold IG
Since the semiconductor chip such as BT is directly attached with a fixing member such as a screw, there is a problem that the semiconductor chip floats due to loosening of the screw or the like, or a crack occurs in the resin of the semiconductor chip due to excessive tightening of the screw or the like.

【0006】また、例えばIGBTの背面のむき出しのエミ
ッタ電極と金属等の材料からなる放熱部材との電気絶縁
は絶縁シートで行っているが、この絶縁シートにはねじ
等を通すための穴(図4の穴6)が開けられるため、絶
縁シートの位置がずれて、エミッタ電極全体を絶縁シー
トでカバー出来ずに、放熱部材とエミッタ電極間で電気
的短絡が起こる危険性があった。
For example, electrical insulation between the exposed emitter electrode on the back surface of the IGBT and a heat radiating member made of a material such as metal is performed by an insulating sheet. Since the hole 6) of No. 4 is formed, the position of the insulating sheet is shifted, so that the entire emitter electrode cannot be covered with the insulating sheet, and there is a risk that an electrical short circuit may occur between the heat radiation member and the emitter electrode.

【0007】さらに、ねじ等の固定部材の固定部分は発
熱を伝えるためのエミッタ電極と離して配置されている
ので、ねじ等の締め付けによるIGBT等の半導体チップは
放熱部材に対し均等に面圧力を受けていず、放熱性が低
下していた。この放熱性の低下により半導体チップの所
期の特性が十分発揮できず、結果として、より電力容量
の大きな半導体チップを使用することになり、半導体装
置の大型化、高価格化を招いていた。
Further, since the fixing portion of the fixing member such as a screw is disposed apart from the emitter electrode for transmitting heat, the semiconductor chip such as an IGBT by tightening the screw uniformly applies a surface pressure to the heat radiating member. No heat radiation was observed. Due to this decrease in heat radiation, the expected characteristics of the semiconductor chip cannot be sufficiently exhibited, and as a result, a semiconductor chip having a larger power capacity is used, resulting in an increase in size and cost of the semiconductor device.

【0008】また公開特許公報にて提案された半導体装
置の例では、半導体チップを搭載した絶縁板または基板
を直接ボルトまたはねじといった固定部材で放熱部材に
取り付けていないが、半導体チップの周辺の樹脂ケース
により絶縁板、または半導体チップを搭載した基板の両
端部を、ばねを介して放熱部材に押し付けまたは押圧し
ている構造となっていて、押し付けまたは押圧を受ける
場所は絶縁板または基板の周辺部または端部であるの
で、半導体チップを搭載した絶縁板または基板全体に均
等に面圧力を受けていず、放熱性が低下する課題を有し
ていた。また複雑な構造をとるため、組み立てにくく小
型化が図れず、高価格となっていた。
In the example of the semiconductor device proposed in the patent publication, the insulating plate or the substrate on which the semiconductor chip is mounted is not directly attached to the heat radiating member by a fixing member such as a bolt or a screw. The case has a structure in which both ends of the insulating plate or the substrate on which the semiconductor chip is mounted are pressed or pressed against the heat dissipating member via a spring. Or, since it is an end portion, surface pressure is not evenly applied to the entire insulating plate or substrate on which the semiconductor chip is mounted, and there is a problem that heat dissipation is reduced. In addition, since it has a complicated structure, it is difficult to assemble and cannot be reduced in size, resulting in a high price.

【0009】本発明の目的は、かかる従来の放熱構造を
有する半導体装置、特に半導体チップに絶縁ゲート型バ
イポーラトランジスタ(IGBT)に関するものが有する課
題を解決し、小型で安価なIGBTなどの半導体チップを使
用でき、組み込み等の作業性にすぐれ、放熱性を確保し
信頼性の高い半導体装置を提供しようとするところにあ
る。
An object of the present invention is to solve the problems of a conventional semiconductor device having a heat dissipation structure, particularly a semiconductor chip having an insulated gate bipolar transistor (IGBT), and to provide a small and inexpensive semiconductor chip such as an IGBT. An object of the present invention is to provide a semiconductor device which can be used, has excellent workability in assembling and the like, secures heat dissipation, and has high reliability.

【0010】[0010]

【課題を解決するための手段】上記目的を達成するため
に、第1の発明に係る半導体装置においては、集積回路
チップと放熱部材を有する半導体装置であって、前記半
導体チップは、その放熱部材に向いている面と反対側の
面において、弾性部材の圧縮力によって放熱部材にむけ
て押し付けられていることを特徴とする。
According to a first aspect of the present invention, there is provided a semiconductor device having an integrated circuit chip and a heat radiating member, wherein the semiconductor chip has a heat radiating member. On the surface opposite to the surface facing the fin, the elastic member is pressed against the heat radiating member by the compressive force of the elastic member.

【0011】第2の発明に係る半導体装置は、第1の発
明において、前記弾性部材は板ばねであって、前記半導
体チップをはさんで放熱部材と反対側にあって、前記半
導体チップの上方を覆うことを特徴とする。
A semiconductor device according to a second aspect of the present invention is the semiconductor device according to the first aspect, wherein the elastic member is a leaf spring, and is located on a side opposite to the heat radiation member with the semiconductor chip interposed therebetween. Is characterized by being covered.

【0012】第3の発明に係る半導体装置は、第2の発
明において、前記板ばねは、ばね性の板を加工して形成
されたプレートの一部であって、そのプレートは、少な
くとも1つの板ばね部分と、その板ばね部分に沿って延
びている部分を有し、その延びている部分には前記半導
体チップの端子の位置決め部材を少なくとも1つ備えて
いることを特徴とする。
In a semiconductor device according to a third aspect of the present invention, in the second aspect, the leaf spring is a part of a plate formed by processing a resilient plate, and the plate has at least one plate. It has a leaf spring portion and a portion extending along the leaf spring portion, and the extended portion is provided with at least one positioning member for a terminal of the semiconductor chip.

【0013】第1の発明においては、ねじ等の固定部材
によって直接半導体チップを放熱部材に取りつけるので
なく、弾性部材を用いて半導体チップの放熱部材に向い
ている面の反対側の面を、弾性部材の圧縮力により放熱
部材に押し付けているので、半導体チップは浮くことも
クラックが生じることもなく、さらに面圧力が均一にか
かるので、放熱性が十分に得られる。また絶縁シートに
は電気的短絡の原因となるねじ等の固定部材を通す穴が
ない。
In the first aspect of the invention, the semiconductor chip is not directly attached to the heat radiating member by a fixing member such as a screw, but the surface of the semiconductor chip opposite to the surface facing the heat radiating member is elastically fixed by using an elastic member. Since the semiconductor chip is pressed against the heat radiating member by the compressive force of the member, the semiconductor chip does not float or crack, and the surface pressure is evenly applied, so that sufficient heat radiation can be obtained. Further, the insulating sheet has no hole through which a fixing member such as a screw which causes an electric short circuit passes.

【0014】第2の発明においては、前記弾性部材を板
ばねで構成し、また半導体チップの上方を覆うようにし
たので、安価、容易に製作でき、さらにシールド効果を
持たせることが出来る。
In the second aspect of the present invention, since the elastic member is formed of a leaf spring and covers the upper part of the semiconductor chip, it can be manufactured inexpensively and easily, and can have a shielding effect.

【0015】第3の発明においては、前記弾性部材を構
成する板ばねは、ばね性の板を加工して形成されたプレ
ートの一部となっていて、その弾性部材を構成する板ば
ね部分にそって延びている部分には前記半導体チップの
端子の位置決め部材を有するようにしたので、半導体チ
ップが容易に組み込める。また1つのプレートに少なく
とも1つ、すなわち複数の板ばね、位置決め部材を有し
ているときは、複数の半導体チップを、半導体装置全体
の体積を小さくしてかつ容易に組み込みことが出来る。
In a third aspect of the present invention, the leaf spring constituting the elastic member is a part of a plate formed by processing a resilient plate. Since the extending portion has the positioning member for the terminal of the semiconductor chip, the semiconductor chip can be easily assembled. When one plate has at least one, that is, a plurality of leaf springs and a positioning member, a plurality of semiconductor chips can be easily integrated with a reduced volume of the entire semiconductor device.

【0016】[0016]

【発明の実施の形態】以下図面を用いて本発明を実施す
るための形態について詳細に説明する。図1は第1、第
2の発明にかかる第1の実施形態である。ここで図4と
同じ構成要素には同じ符号をつけた。ねじ等の固定部材
1は弾性部材11を固定し、弾性部材11は半導体チッ
プ2の放熱部材4に向いている面の反対側の面で半導体
チップ2に接して圧縮力を発生し、半導体チップ2の発
熱部分(エミッタ電極10)上部より弾性部材11で放
熱部材4に押し付けている。絶縁シート3は、ねじ等の
固定部材1と分離した位置に配置されている。弾性部材
11は、半導体チップ2の上面方向から見ると、図1
(a)に示すように半導体チップ2の上面を覆ってい
る。
Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 shows a first embodiment according to the first and second inventions. Here, the same reference numerals are given to the same components as those in FIG. The fixing member 1 such as a screw fixes the elastic member 11, and the elastic member 11 contacts the semiconductor chip 2 on the surface of the semiconductor chip 2 opposite to the surface facing the heat radiating member 4 to generate a compressive force, The elastic member 11 is pressed against the heat radiating member 4 from above the heat generating portion (emitter electrode 10). The insulating sheet 3 is arranged at a position separated from the fixing member 1 such as a screw. The elastic member 11 has a structure shown in FIG.
As shown in (a), the upper surface of the semiconductor chip 2 is covered.

【0017】かかる第1の実施形態においては、半導体
チップ2は、固定部材1によって支持された弾性部材1
1の圧縮力により、絶縁シート3を介して半導体チップ
2の発熱部分(エミッタ電極10)上部より弾性部材1
1で放熱部材4にむけて押し付けられ、面圧力が均一に
かかり、面圧力不均一による放熱性の低下を防ぐ。弾性
部材11は、ばね性の板材たとえば高炭素鋼、ステンレ
ス鋼、銅合金等から板ばね等として作ることが出来る。
この場合半導体チップに面圧は均一にかかるので、例え
ば実施例で述べた+216Vで300Aクラスのモールド
IGBT1個の場合では、押し付け力は約10kg程度で放
熱特性は十分確保できる。放熱部材4は金属板、好まし
くは銅、アルミなどの金属板などで製作できる。また絶
縁シート3はシリコン樹脂シート等で製作でき、ねじ等
の固定部材1を通すための穴はないので、エミッタ電極
10と金属材料等からなる放熱部材4との間は完全に電
気的に絶縁される。また弾性部材11は半導体チップ2
の上面を覆っているので、シールド効果がある。
In the first embodiment, the semiconductor chip 2 includes the elastic member 1 supported by the fixing member 1.
Due to the compressive force of 1, the elastic member 1 is moved from above the heating portion (emitter electrode 10) of the semiconductor chip 2 via the insulating sheet 3.
At 1, the pressure is pressed against the heat radiating member 4, the surface pressure is uniformly applied, and a decrease in heat radiation due to uneven surface pressure is prevented. The elastic member 11 can be made as a leaf spring or the like from a springy plate material such as high-carbon steel, stainless steel, a copper alloy or the like.
In this case, since the surface pressure is uniformly applied to the semiconductor chip, for example, the mold of +216 V and 300 A class described in the embodiment is used.
In the case of one IGBT, the pressing force is about 10 kg and the heat radiation characteristics can be sufficiently secured. The heat dissipating member 4 can be made of a metal plate, preferably a metal plate such as copper or aluminum. Further, since the insulating sheet 3 can be made of a silicon resin sheet or the like and has no holes for passing the fixing members 1 such as screws, the insulation between the emitter electrode 10 and the heat radiating member 4 made of a metal material or the like is completely electrically insulated. Is done. The elastic member 11 is a semiconductor chip 2
It has a shielding effect because it covers the upper surface of the.

【0018】図2は、第2、第3の発明にかかる第2の
実施形態である。ここで図4、図1と同じ構成要素には
同じ符号を付した。ここにおいて、ねじ等の固定部材1
は弾性部材11を固定し、弾性部材11は半導体チップ
2の放熱部材4に向いている面の反対側の面で半導体チ
ップ2に接して圧縮力を発生し、半導体チップ2の発熱
部分(エミッタ電極10)上部より弾性部材11で放熱
部材4に押し付けて、面圧力不均一による放熱性の低下
を防いでいること、絶縁シート3は、ねじ等の固定部材
1と分離した位置に配置されていることは図1と同様の
構成と作用である。ここで弾性部材11はプレート14
の一部として形成される。すなわちプレート14は図1
と比較して理解できるように、弾性部材を構成する部分
11のほかに、弾性部材を構成する部分11に沿って延
びる部分12を有していて、その延びる部分12の、半
導体チップ2を越えた位置に、半導体チップの端子7,
8,9の位置決め部材13を備えている。位置決め部材
13は、半導体チップ側が穴径の大きいテーパ状の3つ
の穴を持ち、この3つの穴に半導体チップ2の端子7,
8,9が挿入され、図示されていない目的装置の基板1
5と接続される。
FIG. 2 shows a second embodiment according to the second and third inventions. Here, the same components as those in FIGS. 4 and 1 are denoted by the same reference numerals. Here, a fixing member 1 such as a screw
Fixes the elastic member 11, and the elastic member 11 comes into contact with the semiconductor chip 2 on the surface opposite to the surface facing the heat radiating member 4 of the semiconductor chip 2, generates a compressive force, and generates a heat generating portion (emitter) of the semiconductor chip 2. The electrode 10) is pressed against the heat radiating member 4 by the elastic member 11 from above to prevent a decrease in heat radiating property due to uneven surface pressure. The insulating sheet 3 is disposed at a position separated from the fixing member 1 such as a screw. This is the same configuration and operation as in FIG. Here, the elastic member 11 is a plate 14
Formed as part of That is, the plate 14 corresponds to FIG.
As can be understood from the comparison, in addition to the portion 11 constituting the elastic member, the elastic member has a portion 12 extending along the portion 11 constituting the elastic member. Terminal 7 of the semiconductor chip
Eight and nine positioning members 13 are provided. The positioning member 13 has three tapered holes having a large hole diameter on the semiconductor chip side, and the terminals 7,
8 and 9 are inserted, and the substrate 1 of the target device (not shown)
5 is connected.

【0019】かかる第2の実施形態では、半導体チップ
2は、固定部材1によって支持されたプレート14の一
部としての弾性部材を構成する部分11の圧縮力によ
り、絶縁シート3を介して半導体チップ2の発熱部分
(エミッタ電極10)上部より弾性部材11で放熱部材
4にむけて押し付けられ、この場合半導体チップに面圧
力は均一にかかり、面圧力不均一による放熱性の低下を
防ぐこと等の作用は実施形態1と同じである。またプレ
ート14の弾性部材を構成する部分11と弾性部材を構
成する部分11に沿って延びる部分12によって半導体
チップ2の上面を覆うので、シールド効果は実施形態1
よりさらに向上する。さらにその延びる部分12の、半
導体チップ2を越えた位置に、半導体チップの端子7,
8,9の位置決め部材13を備えていて、その位置決め
部材13は、半導体チップ側が穴径の大きいテーパ状の
3つの穴を持つので、この3つの穴に半導体チップ2の
端子7,8,9がスムーズに挿入でき、組立性が格段に
向上する。かかる形状の位置決め部材13はたとえば材
質を樹脂として、アウトサート成形法等により、ばね性
のたとえば金属材料の板と一体製作が容易にできる。ま
たこのようにプレート14に弾性部材を構成する部分1
1と位置決め部材を一体製作できるので、部品点数が大
幅に減少する。
In the second embodiment, the semiconductor chip 2 is separated from the semiconductor chip 2 by the compressive force of the portion 11 forming an elastic member as a part of the plate 14 supported by the fixing member 1 via the insulating sheet 3. The elastic member 11 is pressed against the heat dissipating member 4 from the upper part of the heat generating portion (emitter electrode 10) 2 to apply a uniform surface pressure to the semiconductor chip. The operation is the same as in the first embodiment. Further, since the upper surface of the semiconductor chip 2 is covered by the portion 11 forming the elastic member of the plate 14 and the portion 12 extending along the portion 11 forming the elastic member, the shielding effect is reduced in the first embodiment.
Even better. Further, the terminals 7, 7 of the semiconductor chip are located at positions of the extending portions 12 beyond the semiconductor chip 2.
Since the semiconductor chip side has three tapered holes having a large hole diameter, the positioning members 13 are provided with the terminals 7, 8, 9 of the semiconductor chip 2 in these three holes. Can be inserted smoothly, and the assemblability is greatly improved. The positioning member 13 having such a shape can be easily manufactured integrally with a plate made of a resilient material such as a metal material by an outsert molding method or the like, for example, using resin as a material. Further, the portion 1 constituting the elastic member on the plate 14 as described above.
Since the positioning member 1 and the positioning member can be manufactured integrally, the number of parts is greatly reduced.

【0020】図3は第3の発明に係る第3の実施形態で
ある。図3では、図1、図2、図4と同じ構成要素には
同じ符号を付した。第3の実施形態は、第2の実施形態
の複数個分を一体化製作したものであり、基本的な単位
についての構成と作用は第2の実施形態と同一である。
図3では、第2の実施形態の単位を6ケ分一体化製作し
た例を示したが、その数は6ケに限るものではない。こ
こで固定部材1は、たとえば図3では半導体チップ2を
3ケ2列に配置してその列の中間に配置されている。こ
のことにより、個別に実施形態2を採用するときに比較
して、固定部材1の数が大幅に減少する。また位置決め
部材13の作用により、半導体チップの数が増加しても
容易に組立ができる。
FIG. 3 shows a third embodiment according to the third invention. 3, the same components as those in FIGS. 1, 2, and 4 are denoted by the same reference numerals. In the third embodiment, a plurality of parts of the second embodiment are integrally manufactured, and the configuration and operation of basic units are the same as those of the second embodiment.
FIG. 3 shows an example in which six units of the second embodiment are integrally manufactured, but the number is not limited to six. Here, the fixing member 1 is arranged, for example, in FIG. 3 by arranging three semiconductor chips 2 in two rows and in the middle of the row. This greatly reduces the number of fixing members 1 as compared with the case where the second embodiment is individually adopted. Also, due to the operation of the positioning member 13, even if the number of semiconductor chips increases, the semiconductor chip can be easily assembled.

【0021】[0021]

【発明の効果】このように第1の発明においては、ねじ
等の固定部材によって直接半導体チップを放熱部材に取
りつけるのでなく、半導体チップはその放熱部材に向い
ている面と反対側の面において、弾性部材の圧縮力によ
り放熱部材に押し付けてられているので、半導体チップ
は浮くこともクラックが生じることもなく、さらに面圧
力が均一にかかるので、放熱性が十分に得られ、半導体
チップの所期の特性が十分発揮できるので、結果とし
て、より電力容量の小さな半導体チップを使用すること
ができ、半導体装置の小型化、低価格化ができる。
As described above, in the first aspect, the semiconductor chip is not directly attached to the heat radiating member by the fixing member such as the screw, but the semiconductor chip is provided on the surface opposite to the surface facing the heat radiating member. Since the semiconductor chip is pressed against the heat radiating member by the compressive force of the elastic member, the semiconductor chip does not float or crack, and the surface pressure is evenly applied. As a result, a semiconductor chip having a smaller power capacity can be used, and the size and price of the semiconductor device can be reduced.

【0022】また絶縁シートには電気的短絡の原因とな
るねじ等の固定部材を通す穴がないので、放熱部材とエ
ミッタ電極間で電気的短絡が起こることはない。
Further, since the insulating sheet has no hole for passing a fixing member such as a screw which causes an electric short circuit, an electric short circuit does not occur between the heat radiation member and the emitter electrode.

【0023】第2の発明においては、前記弾性部材を板
ばねで構成し、また半導体チップの上方を覆うようにし
たので、安価、容易に製作でき、さらにシールド効果を
持つ。
In the second invention, since the elastic member is constituted by a leaf spring and covers the upper part of the semiconductor chip, it can be manufactured easily at low cost and has a shielding effect.

【0024】第3の発明においては、前記板ばねをばね
性の板を加工して形成されたプレートの一部となってい
て、板ばね部分にそって延びている部分には前記半導体
チップの端子の位置決め部材を有するようにしたので、
半導体チップが容易に組み込める。また1つのプレート
に少なくとも1つ、すなわち複数の板ばね、位置決め部
材を有しているときは、複数の半導体チップを有する半
導体装置において、部品点数が大幅に減少し、かつ容易
に組み込みことが出来て、低価格かつ小型化ができる。
In a third aspect of the present invention, the plate spring is a part of a plate formed by processing a resilient plate, and a portion extending along the plate spring portion is provided with the semiconductor chip. Since it has a terminal positioning member,
Semiconductor chips can be easily incorporated. When one plate has at least one plate spring, that is, a plurality of leaf springs and positioning members, the number of components in a semiconductor device having a plurality of semiconductor chips is greatly reduced, and the semiconductor device can be easily incorporated. As a result, the cost and size can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の第1実施形態の正面図、平面図であ
る。
FIG. 1 is a front view and a plan view of a first embodiment of the present invention.

【図2】 本発明の第2実施形態の正面図、平面図であ
る。
FIG. 2 is a front view and a plan view of a second embodiment of the present invention.

【図3】 本発明の第3実施形態の平面図、正面図であ
る。
FIG. 3 is a plan view and a front view of a third embodiment of the present invention.

【図4】 従来例の正面図、平面図である。FIG. 4 is a front view and a plan view of a conventional example.

【符号の説明】[Explanation of symbols]

1 固定部材、2 半導体チップ、3 絶縁シート、4
放熱部材、5 穴、6 穴、7 エミッタ端子、8
コレクタ端子、9 ゲート端子、10 エミッタ電極、
11 弾性部材、12 弾性部材に沿って延びる部分、
13 位置決め部材、14 プレート、15 基板。
1 fixing member, 2 semiconductor chip, 3 insulating sheet, 4
Heat dissipation member, 5 holes, 6 holes, 7 emitter terminals, 8
Collector terminal, 9 gate terminal, 10 emitter electrode,
11 elastic member, 12 a portion extending along the elastic member,
13 positioning member, 14 plate, 15 substrate.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 半導体チップと放熱部材を有する半導体
装置であって、前記半導体チップは、その放熱部材に向
いている面と反対側の面において、弾性部材の圧縮力に
よって放熱部材にむけて押し付けられていることを特徴
とする半導体装置。
1. A semiconductor device having a semiconductor chip and a heat radiating member, wherein the semiconductor chip is pressed against the heat radiating member by a compressive force of an elastic member on a surface opposite to a surface facing the heat radiating member. A semiconductor device characterized in that:
【請求項2】 請求項1において、前記弾性部材は板ば
ねであって、前記半導体チップをはさんで放熱部材と反
対側にあって、前記半導体チップの上方を覆うことを特
徴とする半導体装置。
2. The semiconductor device according to claim 1, wherein the elastic member is a leaf spring, and is located on a side opposite to the heat radiating member across the semiconductor chip and covers an upper part of the semiconductor chip. .
【請求項3】 請求項2において、前記板ばねは、ばね
性の板を加工して形成されたプレートの一部であって、
そのプレートは、少なくとも1つの板ばね部分と、その
板ばね部分に沿って延びている部分を有し、その延びて
いる部分には前記半導体チップの端子の位置決め部材を
少なくとも1つ備えていることを特徴とする半導体装
置。
3. The plate spring according to claim 2, wherein the plate spring is a part of a plate formed by processing a spring plate.
The plate has at least one leaf spring portion and a portion extending along the leaf spring portion, and the extending portion has at least one positioning member for a terminal of the semiconductor chip. A semiconductor device characterized by the above-mentioned.
JP2000391981A 2000-12-25 2000-12-25 Semiconductor device Pending JP2002198477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000391981A JP2002198477A (en) 2000-12-25 2000-12-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000391981A JP2002198477A (en) 2000-12-25 2000-12-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JP2002198477A true JP2002198477A (en) 2002-07-12

Family

ID=18858044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000391981A Pending JP2002198477A (en) 2000-12-25 2000-12-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2002198477A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004086501A1 (en) * 2003-03-25 2004-10-07 Toshiba Carrier Corporation Heat radiator
EP1544915A2 (en) * 2003-12-19 2005-06-22 Hitachi Industrial Equipment Systems Co. Ltd. Electronic module heat sink mounting arrangement
JP2008135784A (en) * 2008-02-18 2008-06-12 Matsushita Electric Ind Co Ltd Component unit
JP2009036042A (en) * 2007-07-31 2009-02-19 Calsonic Kansei Corp Electric compressor
US7745952B2 (en) 2005-03-31 2010-06-29 Hitachi Industrial Equipment Systems Co., Ltd. Electric circuit module with improved heat dissipation characteristics using a fixing tool for fixing an electric apparatus to a heat sink
CN102889194A (en) * 2011-07-19 2013-01-23 株式会社丰田自动织机 Structure for fixing electric part for motor-driven compressor
WO2013080317A1 (en) 2011-11-30 2013-06-06 三菱電機株式会社 Semiconductor device, and on-board power conversion device
US9035453B2 (en) 2005-02-28 2015-05-19 Octec, Inc. Semiconductor device
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US9578790B2 (en) 2012-03-19 2017-02-21 Mitsubishi Electric Corporation Power conversion apparatus
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CN108389842A (en) * 2018-02-22 2018-08-10 宁波央腾汽车电子有限公司 A kind of elastic pressuring plate fixed structure and installation method
JP2020031122A (en) * 2018-08-22 2020-02-27 新電元工業株式会社 Semiconductor device and manufacturing method thereof
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Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2004224861B2 (en) * 2003-03-25 2007-06-07 Toshiba Carrier Corporation Heat radiator
CN100373600C (en) * 2003-03-25 2008-03-05 东芝开利株式会社 Heat radiator
WO2004086501A1 (en) * 2003-03-25 2004-10-07 Toshiba Carrier Corporation Heat radiator
EP1544915A2 (en) * 2003-12-19 2005-06-22 Hitachi Industrial Equipment Systems Co. Ltd. Electronic module heat sink mounting arrangement
US7206204B2 (en) 2003-12-19 2007-04-17 Hitachi Industrial Equipment Systems Co., Ltd. Electric circuit module
EP1544915A3 (en) * 2003-12-19 2007-12-05 Hitachi Industrial Equipment Systems Co. Ltd. Electronic module heat sink mounting arrangement
CN100382289C (en) * 2003-12-19 2008-04-16 株式会社日立产机系统 Electric circuit module
US9035453B2 (en) 2005-02-28 2015-05-19 Octec, Inc. Semiconductor device
US7745952B2 (en) 2005-03-31 2010-06-29 Hitachi Industrial Equipment Systems Co., Ltd. Electric circuit module with improved heat dissipation characteristics using a fixing tool for fixing an electric apparatus to a heat sink
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JP2008135784A (en) * 2008-02-18 2008-06-12 Matsushita Electric Ind Co Ltd Component unit
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US9025334B2 (en) 2011-07-19 2015-05-05 Kabushiki Kaisha Toyota Jidoshokki Structure for fixing electric part for motor-driven compressor
CN102889194A (en) * 2011-07-19 2013-01-23 株式会社丰田自动织机 Structure for fixing electric part for motor-driven compressor
WO2013080317A1 (en) 2011-11-30 2013-06-06 三菱電機株式会社 Semiconductor device, and on-board power conversion device
US9147634B2 (en) 2011-11-30 2015-09-29 Mitsubishi Electric Corporation Semiconductor device, and on-board power conversion device
US9578790B2 (en) 2012-03-19 2017-02-21 Mitsubishi Electric Corporation Power conversion apparatus
RU2640038C2 (en) * 2013-07-08 2017-12-26 Сименс Акциенгезелльшафт Multilevel converter
US9936610B2 (en) 2013-07-08 2018-04-03 Siemens Aktiengesellschaft Multilevel converter
DE102015202591A1 (en) 2014-02-13 2015-08-13 Omron Automotive Electronics Co., Ltd. Electronic component mounting structure and mounting method
DE102015202591B4 (en) 2014-02-13 2024-05-08 Omron Corporation Electronic component mounting structure and mounting method
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JP2020031122A (en) * 2018-08-22 2020-02-27 新電元工業株式会社 Semiconductor device and manufacturing method thereof
JP7097780B2 (en) 2018-08-22 2022-07-08 新電元工業株式会社 Semiconductor devices and methods for manufacturing semiconductor devices
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US11652021B2 (en) 2019-05-07 2023-05-16 Zf Friedrichshafen Ag Power module having packaged power semiconductors for the controllable supply of electric power to a load
CN112420636A (en) * 2020-11-19 2021-02-26 四川长虹空调有限公司 Chip heat radiation structure

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