CN112363356B - 显示面板 - Google Patents
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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Abstract
本发明提供一种显示面板,包括若干子像素,所述子像素包括:第一公共电极走线、第二公共电极走线、第一连接线、第二连接线以及像素电极。本发明的子像素结构使用新的公共电极走线的设计,由于像素电极内电极主干的位置本身是暗区,从而将第一公共电极走线设置在电极主干的下方,以达到减少一道暗影,增加穿透率的目的。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种超窄边框的显示面板。
背景技术
现有液晶显示器的像素设计方案中,存储电容可以使用像素上一行的扫描线作为电位参考电极,该技术方案一般被称为Cst on gate,即像素电极和扫描线重合。如图1所示,如果下板共电极也同传统的Cst on COM(下板共电极作为电位参考电极)设计方法一样,公共电极走线(Acom走线)采用环形四周封口设计,会降低像素电极的开口率。而如果使用单侧Acom走线设计,如果单侧的Acom走线断线,会影响液晶配向;使用无Acom走线设计,会使后续制程中无法暗点化的问题,会影响面板的显示效果。
因此,有必要提供一种显示面板,采用新的Acom走线设计,可以降低像素电极的开口率。
发明内容
本发明一目的提供一种显示面板,将第一公共电极走线设置在电极主干的下方,能够减少一道暗影,增加穿透率。
本发明提供一种显示面板,包括多个子像素,所述子像素阵列设置;其中,所述子像素中包括:第一公共电极走线;像素电极,包括相互垂直设置的第一电极主干以及第二电极主干;其中,所述第一公共电极走线设于所述第一电极主干的下方。
进一步地,所述子像素还包括:第二公共电极走线,设于所述子像素的边角处,通过一第一连接线连接所述第一公共电极走线。
进一步地,所述子像素还包括:第二连接线,一端连接所述第二公共电极走线,另一端沿着所述子像素的边界延伸至相邻的子像素。
进一步地,所述子像素还包括:薄膜晶体管,设于所述子像素的边角的对角处。
进一步地,所述子像素还包括:扫描线,设于所述像素电极的下方且连接所述薄膜晶体管。
进一步地,在所述第二公共电极走线处,所述子像素的剖面结构包括:第一金属层,所述第二公共电极走线形成于所述第一金属层中;第一绝缘层,设于所述第一金属层上;有源层,设于所述第一绝缘层上;第二金属层,设于所述有源层上;第二绝缘层,设于所述有源层以及所述第一绝缘层上,所述第二绝缘层设有一第一开槽,所述第一开槽下凹至所述第二金属层的上表面;色阻层,设于所述第二绝缘层上,所述色阻层具有第二开槽,所述第二开槽下凹至所述第二绝缘层的上表面;第三绝缘层,设于所述色阻层上,所述第三绝缘层具有与所述第一开槽相对应的第三开槽,所述第一开槽连接所述第三开槽;以及透明电极层,设于所述第二开槽与所述第一开槽中。
进一步地,所述第一公共电极走线、所述第一连接线以及所述第二公共电极走线制备于同一金属层。
进一步地,所述第一公共电极走线、所述第一连接线、所述第二公共电极走线以及所述第二连接线制备于同一金属层。
进一步地,所述第一公共电极走线与所述扫描线制备于同一层。
进一步地,在所述薄膜晶体管处,所述子像素的层状结构包括:栅极层;第一绝缘层,设于所述栅极层上;有源层,设于所述第一绝缘层上;第二金属层,设于所述有源层上;第二绝缘层,设于所述有源层、所述第二金属层以及所述第一绝缘层上;色阻层,设于所述第二绝缘层上;第三绝缘层,设于所述色阻层上。
本发明的有益效果是:本发明中提供一种显示面板,使用新的公共电极走线的设计,由于像素电极内电极主干的位置本身是暗区,从而将第一公共电极走线设置在电极主干的下方,以达到减少一道暗影,增加穿透率的目的。并且所述第二公共电极走线的像素电极的图案为遮蔽电场防止漏光的ITO图案,可以防止第二公共电极走线漏光。
附图说明
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其它有益效果显而易见。
图1为现有技术子像素结构的示意图。
图2为本发明提供的子像素结构的示意图。
图3为本发明图2中所述第二公共电极走线的剖面图。
图4为本发明图2中所述薄膜晶体管处的剖面图。
显示面板100;
子像素110;第一公共电极走线101;第二公共电极走线102;
第一连接线104;第二连接线105;像素电极103;
薄膜晶体管120;扫描线106;第一电极主干1031;
第二电极主干1032;电极分支1033;栅极层121;
第一金属层112;第一绝缘层113;有源层114;
第二金属层115;第二绝缘层116;色阻层117;
第三绝缘层118;透明电极层119。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述。显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
在本发明中,除非另有明确的规定和限定,第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触,也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且,第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方,或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方,或仅仅表示第一特征水平高度小于第二特征。
如图2所示,本发明提供一种显示面板100,包括多个子像素110,所述子像素110阵列设置。
其中,所述子像素110包括:第一公共电极走线101、第二公共电极走线102、第一连接线104、第二连接线105以及像素电极103。
所述像素电极103包括相互垂直设置的第一电极主干1031以及第二电极主干1032。所述第一电极主干1031垂直平分所述第二电极主干1032。
所述像素电极103的材料包括氧化铟锡。
所述像素电极103还包括电极分支1033,分别倾斜连接所述第一电极主干1031以及所述第二电极主干1032。
所述像素电极103具有四个畴,不同畴区域内的电极分支1033关于第一电极主干1031以及所述第二电极主干1032对称。
所述第一公共电极走线101设于所述第一电极主干1031的下方。
所述第二公共电极走线102设于所述子像素110的边角处,通过所述第一连接线104连接所述第一公共电极走线101。
所述第二公共电极走线102的上设有透明电极层,像素电极103的图案为遮蔽电场防止漏光的ITO图案,可以防止第二公共电极走线102漏光。
在本实施例中,透明电极层可分为两种电信号,分别是像素电极以及数据遮光(data BM less,DBS)
第一电极主干1031/第二电极主干1032/电极分支1033是可以统称为像素电极,所以像素电极是用来控制液晶偏转的,以控制光透过量,使面板呈现出不同的亮度。
DBS与像素电极是完全分开的,是一种特殊的电极图案。DBS是用来遮光的,但DBS与像素电极同样是电极图案,所赋予的电信号不同,若连在一起则会发生短路,所以在第二公共电极走线102的位置会出现一道缝隙,这道缝隙正是漏光的位置,本发明中使用第二公共电极走线102走线穿过这道缝隙,因第二公共电极走线102是金属材质,其本身是不透光的,所以可以是遮蔽光源的光,已达到遮蔽漏光的目的。
在本发明中使用新的公共电极走线的设计,由于像素电极103内电极主干的位置本身是暗区,从而将第一公共电极走线101设置在电极主干的下方,以达到减少一道暗影,增加穿透率的目的。
所述第二连接线105一端连接所述第二公共电极走线102,另一端沿着所述子像素110的边界延伸至相邻的子像素110。
所述第一公共电极走线101、所述第二公共电极走线102、扫描线106、所述第一连接线104以及所述第二连接线105形成于第一金属层112中。
在一实施例中,所述子像素110还包括:薄膜晶体管120以及扫描线106。
所述薄膜晶体管120设于所述边角的对角处。
所述扫描线106设于所述像素电极103的下方且连接所述薄膜晶体管120。
如图3所示,在所述第二公共电极走线102处,所述子像素110的剖面结构包括:所述第一金属层112、第一绝缘层113、有源层114、第二金属层115、第二绝缘层116、色阻层117、第三绝缘层118以及透明电极层119。
所述第一金属层112所述第二公共电极走线102形成于所述第一金属层112中。所述第一绝缘层113设于所述第一金属层112上。所述有源层114设于所述第一绝缘层113上。
所述第二金属层115设于所述有源层114上。所述第二绝缘层116。设于所述有源层114以及所述第一绝缘层113上,所述第二绝缘层116设有一第一开槽1161,所述第一开槽下1161凹至所述第二金属层115的上表面。
所述色阻层117设于所述第二绝缘层116上,所述色阻层117具有第二开槽1171,所述第二开槽1171下凹至所述第二绝缘层116的上表面。所述色阻层117为R/G/B色阻。所述第一开槽1161和所述第二开槽1171的位置是重叠设置的,即在制备的时候,先开设所述第二开槽1171,然后在所述第二开槽1171的槽底开设所述第一开槽1161。
所述第三绝缘层118设于所述色阻层117上,所述第三绝缘层118具有与所述第一开槽1161相对应的第三开槽1181,所述第一开槽1161连接所述第三开槽1181。
所述透明电极层119设于所述第二开槽1171与所述第一开槽1161中。在此处的透明电极层119的图案为遮蔽电场防止漏光的ITO图案,可以防止第二公共电极走线102漏光。在实施例中,所述透明电极层119用以将像素电极103和第二金属层115连接。
所述透明电极层119图案化即为所述像素电极103。
在一实施例中,所述第一公共电极走线101、所述第一连接线104以及所述第二公共电极走线102制备于同一金属层。
在一实施例中,所述第一公共电极走线101、所述第一连接线104、所述第二公共电极走线102以及所述第二连接线105制备于同一金属层。
在一实施例中,所述第一公共电极走线101与所述扫描线106制备于同一层。
如图4所示,在所述薄膜晶体管120处,所述子像素110的层状结构包括:栅极层121、第一绝缘层113、有源层114、第二金属层115、第二绝缘层116、色阻层117以及第三绝缘层118。
所述第一绝缘层113设于所述栅极层121上。所述有源层114设于所述第一绝缘层113上。
所述第二金属层115设于所述有源层114上。所述第二绝缘层116设于所述有源层114、所述第二金属层115以及所述第一绝缘层113上。
所述色阻层117设于所述第二绝缘层116上;所述第三绝缘层118设于所述色阻层117上。
在上述实施例中,对各个实施例的描述都各有侧重,某个实施例中没有详述的部分,可以参见其他实施例的相关描述。
以上对本发明进行了详细介绍,本文中应用了具体个例对本发明的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本发明的技术方案及其核心思想;本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例的技术方案的范围。
Claims (9)
1.一种显示面板,其特征在于,包括多个子像素,所述子像素阵列设置;
其中,所述子像素包括:
第一公共电极走线;以及
像素电极,包括相互垂直设置的第一电极主干以及第二电极主干;
其中,所述第一公共电极走线设于所述第一电极主干的下方;
第二公共电极走线,设于所述子像素的边角处,通过一第一连接线连接所述第一公共电极走线;
所述第二公共电极走线的上设有透明电极层,所述透明电极层包括像素电极以及数据遮光,数据遮光和像素电极之间具有缝隙,所述第二公共电极走线穿过所述缝隙。
2.如权利要求1所述的显示面板,其特征在于,
所述子像素还包括:
第二连接线,一端连接所述第二公共电极走线,另一端沿着所述子像素的边界延伸至相邻的子像素。
3.如权利要求1所述的显示面板,其特征在于,
所述子像素还包括:
薄膜晶体管,设于所述子像素的边角的对角处。
4.如权利要求1所述的显示面板,其特征在于,
所述子像素还包括:
扫描线,设于所述像素电极的下方且连接薄膜晶体管。
5.如权利要求1所述的显示面板,其特征在于,
在所述第二公共电极走线处,所述子像素的剖面结构包括:
第一金属层,所述第二公共电极走线形成于所述第一金属层中;
第一绝缘层,设于所述第一金属层上;
有源层,设于所述第一绝缘层上;
第二金属层,设于所述有源层上;
第二绝缘层,设于所述有源层以及所述第一绝缘层上,所述第二绝缘层设有一第一开槽,所述第一开槽下凹至所述第二金属层的上表面;
色阻层,设于所述第二绝缘层上,所述色阻层具有第二开槽,所述第二开槽下凹至所述第二绝缘层的上表面;
第三绝缘层,设于所述色阻层上,所述第三绝缘层具有与所述第一开槽相对应的第三开槽,所述第一开槽连接所述第三开槽;以及
透明电极层,设于所述第二开槽与所述第一开槽中。
6.如权利要求1所述的显示面板,其特征在于,
所述第一公共电极走线、所述第一连接线以及所述第二公共电极走线制备于同一金属层。
7.如权利要求2所述的显示面板,其特征在于,
所述第一公共电极走线、所述第一连接线、所述第二公共电极走线以及所述第二连接线制备于同一金属层。
8.如权利要求4所述的显示面板,其特征在于,
所述第一公共电极走线与所述扫描线制备于同一层。
9.如权利要求3所述的显示面板,其特征在于,
在所述薄膜晶体管处,所述子像素的层状结构包括:
栅极层;
第一绝缘层,设于所述栅极层上;
有源层,设于所述第一绝缘层上;
第二金属层,设于所述有源层上;
第二绝缘层,设于所述有源层、所述第二金属层以及所述第一绝缘层上;
色阻层,设于所述第二绝缘层上;
第三绝缘层,设于所述色阻层上。
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