CN112335024B - 金属氧氮化物膜的制造方法 - Google Patents

金属氧氮化物膜的制造方法 Download PDF

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CN112335024B
CN112335024B CN201980039953.XA CN201980039953A CN112335024B CN 112335024 B CN112335024 B CN 112335024B CN 201980039953 A CN201980039953 A CN 201980039953A CN 112335024 B CN112335024 B CN 112335024B
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metal oxynitride
oxynitride film
plane
angle
substrate
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CN112335024A (zh
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种村和幸
三本菅正太
奥野直树
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/06—Epitaxial-layer growth by reactive sputtering
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0676—Oxynitrides
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
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    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
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  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Led Devices (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
CN201980039953.XA 2018-07-06 2019-06-24 金属氧氮化物膜的制造方法 Active CN112335024B (zh)

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WO2021161126A1 (ja) * 2020-02-14 2021-08-19 株式会社半導体エネルギー研究所 表示装置および電子機器
WO2025079560A1 (ja) * 2023-10-11 2025-04-17 住友化学株式会社 金属窒化物、膜、積層体、素子、デバイス、膜の製造方法、磁気トンネル接合素子、及び、磁気デバイス

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CA2442985C (en) * 2001-03-30 2016-05-31 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
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JP2001044500A (ja) * 1999-07-26 2001-02-16 Agency Of Ind Science & Technol Ａ面サファイア基板を用いたＺｎＯ系化合物半導体発光素子およびその製法
JP2011029238A (ja) * 2009-07-21 2011-02-10 Fujifilm Corp 結晶性ホモロガス化合物層を含む積層体の製造方法及び電界効果型トランジスタ

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JPWO2020008294A1 (ja) 2021-08-02
JP7296381B2 (ja) 2023-06-22
KR102943468B1 (ko) 2026-03-25
KR20210027448A (ko) 2021-03-10
JP2023118744A (ja) 2023-08-25
CN112335024A (zh) 2021-02-05
US20210125823A1 (en) 2021-04-29
WO2020008294A1 (ja) 2020-01-09
JP2024163913A (ja) 2024-11-22
US20230402280A1 (en) 2023-12-14
JP7531660B2 (ja) 2024-08-09
US12315717B2 (en) 2025-05-27
CN119753828A (zh) 2025-04-04
US11728163B2 (en) 2023-08-15

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