CN112331638A - Light emitting diode and backlight module - Google Patents
Light emitting diode and backlight module Download PDFInfo
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- CN112331638A CN112331638A CN202011040061.2A CN202011040061A CN112331638A CN 112331638 A CN112331638 A CN 112331638A CN 202011040061 A CN202011040061 A CN 202011040061A CN 112331638 A CN112331638 A CN 112331638A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Abstract
The invention provides a light-emitting diode and a backlight module, wherein a third metal connecting area and a corresponding groove of the light-emitting diode are used as bonding pads for welding the light-emitting diode outwards, and when the light-emitting diode is welded on a circuit board or a circuit substrate, solder such as tin paste used in the welding process can be contracted in the groove, so that short circuit connection with the solder on the adjacent bonding pads is avoided, small-size arrangement and small-distance arrangement of the light-emitting diode are facilitated, and the light mixing effect is further facilitated to be improved; the LED adopts the first insulating board and the second insulating board to constitute the base body that forms, and relative equal thickness's individual layer base body, the heat that the LED chip produced can be more quick transmit to the second insulating board below on, consequently can shorten the heat dissipation route by a wide margin, promotes LED's heat dispersion and luminous performance.
Description
Technical Field
The present invention relates to the field of Light Emitting Diodes (LEDs), and more particularly, to an LED and a backlight module.
Background
With the development of electronic semiconductor technology, the application of LEDs in the illumination field and the display field has become mature and extensive. In the display field, the LEDs are used as backlight sources, and in order to improve the display effect, the distance between the LEDs used as the backlight sources is required to be smaller and smaller, and the size of the LEDs is also required to be smaller and smaller, so that the light mixing effect of the backlight module is improved. When the current LED is applied to the backlight field, the following problems can exist: the distance between the LEDs is set to be smaller and smaller, so that the electrode distance between the adjacent LEDs is smaller and smaller, and when the LEDs are welded, solder paste for welding the electrodes between the adjacent LEDs is easily interconnected to cause short circuit. In addition, the smaller the size of the LED is, the smaller the heat dissipation area of the LED is, which results in the increasingly poor heat dissipation performance of the LED.
Disclosure of Invention
The invention provides a light-emitting diode and a backlight module, which solve the problems that the conventional LED is easy to have short circuit during welding and the conventional LED has poor heat dissipation performance.
To solve the above technical problem, an embodiment of the present invention provides a light emitting diode, including:
a light emitting chip unit and a base;
the base body comprises a first insulating plate and a second insulating plate which are arranged in a stacked mode; the front surface of the first insulating plate is plated with a plurality of metal electrode welding areas which are insulated and isolated from each other, the back surface of the first insulating plate is provided with a first metal connecting area corresponding to the metal electrode welding areas, and the first insulating plate is also provided with a metal conductive piece which penetrates through the front surface and the back surface to electrically connect the metal electrode welding areas and the first metal connecting area;
the front surface of the second insulating plate is plated with a second metal connecting area which corresponds to the first metal connecting area and is electrically connected with the first metal connecting area; the back surface of the second insulating plate is plated with a third metal connecting area corresponding to the second metal connecting area, the second insulating plate is also provided with a groove for communicating the corresponding second metal connecting area with the third metal connecting area, and a metal conducting layer which is formed on the side wall of the groove and is used for electrically connecting the second metal connecting area with the third metal connecting area;
the light-emitting chip unit is arranged on the front surface of the first insulating plate, and the electrode of the light-emitting chip unit is electrically connected with the corresponding metal electrode welding area.
Optionally, the light emitting diode further includes a packaging layer formed on the front surface of the first insulating plate and covering the light emitting chip unit, where the packaging layer includes a wavelength conversion layer covering the light emitting chip unit, and a white wall glue layer enclosing the wavelength conversion layer.
Optionally, the light emitting diode includes at least two light emitting chip units, and the white wall glue layer is formed between adjacent light emitting chip units.
Optionally, the encapsulation layer further includes a transparent adhesive layer disposed on the wavelength conversion layer.
Optionally, the cross-section of the groove is arc-shaped or square-shaped.
Optionally, after the first insulating plate and the second insulating plate are stacked, the metal conductive member does not overlap with the groove.
Optionally, after the first insulating plate and the second insulating plate are stacked, the first metal connection region and the second metal connection region at least partially overlap, or the first metal connection region and the second metal connection region do not overlap, and the base further includes a conductive filler filled between the first metal connection region and the second metal connection region to conductively connect the first metal connection region and the second metal connection region.
Optionally, the substrate further comprises a conductive glue layer formed between the first metal connection region and the second metal connection region.
Optionally, the light emitting diode includes at least two light emitting chip units, at least one electrode of at least two light emitting chip units shares one metal electrode bonding area, or at least two metal electrode bonding areas share one first metal bonding area.
Optionally, the metal electrode pad includes a copper plating layer, a nickel plating layer, and a gold plating layer, which are sequentially disposed from bottom to top on the front surface of the first insulating plate.
In order to solve the technical problem, the invention further provides a backlight module, which comprises a display back plate and a plurality of light emitting diodes, wherein the plurality of light emitting diodes are arranged on the display back plate.
Advantageous effects
The invention provides a light-emitting diode and a backlight module, wherein the light-emitting diode comprises a light-emitting chip unit and a substrate; the base body comprises a first insulating plate and a second insulating plate which are arranged in a stacked mode; the front surface of the first insulating plate is plated with a plurality of metal electrode welding areas which are insulated and isolated from each other and used for correspondingly welding with the electrodes of the light-emitting chip unit; the back surface of the first insulating plate is provided with a first metal connecting area corresponding to the metal electrode welding area, and the first insulating plate is also provided with a metal conductive piece which penetrates through the front surface and the back surface and is used for electrically connecting the metal electrode welding area and the first metal connecting area; the front surface of the second insulating plate is plated with a second metal connecting area which corresponds to the first metal connecting area and is electrically connected with the first metal connecting area, the back surface of the second insulating plate is plated with a third metal connecting area which corresponds to the second metal connecting area, the second insulating plate is also provided with a groove which is used for communicating the second metal connecting area with the third metal connecting area, and a metal conducting layer which is formed on the side wall of the groove and is used for electrically connecting the second metal connecting area with the third metal connecting area, so that the electrode of the light-emitting chip unit can be electrically connected with the outside through a metal electrode welding area, the first metal connecting area, the second metal connecting area and the third metal connecting area which are sequentially electrically connected, and the third metal connecting area and the corresponding groove are used as welding pads for externally welding the light-; the light-emitting diode provided by the invention at least has the following advantages:
the third metal connecting area and the corresponding groove are used as bonding pads for welding the light-emitting diode to the outside, when the light-emitting diode is welded on a circuit board or a circuit substrate, solder such as tin paste used in the welding process can be contracted in the groove, so that short circuit connection with the solder on the adjacent bonding pad is avoided, small-size arrangement and small-distance arrangement of the light-emitting diode are facilitated, and the light mixing effect is facilitated to be improved;
the LED adopts the first insulating board and the second insulating board to constitute the base body that forms, and relative equal thickness's individual layer base body, the heat that the LED chip produced can be more quick transmit to the second insulating board below on, consequently can shorten the heat dissipation route by a wide margin, promotes LED's heat dispersion and luminous performance.
Drawings
Fig. 1 is a schematic perspective view of a light emitting diode according to an embodiment of the present invention;
fig. 2 is a cross-sectional view of a light emitting diode provided in an embodiment of the present invention;
FIG. 3 is a perspective view of a substrate according to an embodiment of the present invention;
FIG. 4 is a bottom view of a substrate according to an embodiment of the present invention;
FIG. 5 is a cross-sectional view of a substrate provided in accordance with an embodiment of the present invention;
fig. 6 is a first cross-sectional view of a first insulating plate according to an embodiment of the present invention;
fig. 7 is a second cross-sectional view of the first insulating plate according to the embodiment of the present invention;
FIG. 8 is a cross-sectional view of a second insulating plate provided in accordance with an embodiment of the present invention;
FIG. 9 is a perspective view of another LED according to an embodiment of the present invention;
fig. 10 is a cross-sectional view of another light emitting diode provided in accordance with an embodiment of the present invention;
fig. 11 is a first schematic view illustrating an overlap between a first metal connection region and a second metal connection region according to an embodiment of the present invention;
fig. 12 is a second schematic view illustrating an overlap between a first metal connection region and a second metal connection region according to an embodiment of the present invention;
fig. 13 is a schematic diagram illustrating that the first metal connection region and the second metal connection region do not overlap according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The embodiment provides the light-emitting diode which is simple in structure, good in heat dissipation performance and more beneficial to the miniaturization of the size of the light-emitting diode, the base body of the light-emitting diode is composed of a double-layer substrate formed on a first insulating plate and a second insulating plate, and a metal electrode welding area and a metal connecting area which are sequentially and correspondingly arranged on the double-layer substrate, the metal electrode welding area and the metal connecting area are formed to electrically connect a light-emitting chip unit arranged on the base body with the outside, and a groove used for containing solders such as solder paste is further arranged on the second insulating plate. It should be understood that, in this embodiment, the materials of the first insulating plate and the second insulating plate may be flexibly selected, and at least one of the first insulating plate and the second insulating plate may be a rigid substrate or a flexible substrate. For example, in one example, the first insulating plate and the second insulating plate may be both rigid substrates, may be both flexible substrates, or may be one of the rigid substrates and the other flexible substrate. It should be understood that the light emitting chip unit in the present embodiment may employ, but is not limited to, a front-mounted LED chip, a flip LED chip, or a vertical LED chip.
For ease of understanding, the present embodiment further exemplifies the light emitting diode.
The light emitting diode provided by the embodiment comprises a substrate which is a double-layer insulating plate, and a light emitting chip unit which is fixedly and electrically connected with the substrate, wherein:
the base body comprises a first insulating plate and a second insulating plate which are stacked, the first insulating plate is positioned on the second insulating plate, a plurality of metal electrode welding areas which are insulated and isolated from each other are plated on the front surface of the first insulating plate, and one metal electrode welding area can be used for welding one electrode of one light-emitting chip unit and also can be used for welding two or more electrodes of the light-emitting chip units. The metal electrode welding area can be flexibly selected and arranged by materials and structures. For example, in one example, the metal electrode pad may have a single-layer film structure or a multi-layer film structure, and the material thereof may be selected from, but not limited to, one or more of Au, Pt, Pd, Rh, Ni, W, Mo, Cr, Ti, Fe, Cu, Al, and Ag. For example, in one example, the metal electrode pad may include a Cu-plated layer, a Ni-plated layer, and an Au-plated layer sequentially disposed from bottom to top on the front surface of the first insulating plate.
In this embodiment, the back surface of the first insulating plate is provided with a first metal connection region corresponding to the metal electrode bonding region, and the first insulating plate is further provided with a metal conductive member penetrating through the front surface and the back surface to electrically connect the metal electrode bonding region and the first metal connection region; it should be understood that, in this embodiment, the corresponding relationship between the metal electrode bonding area and the first metal bonding area may be flexibly set, for example, in some application scenarios, the metal electrode bonding area and the first metal bonding area may be set to correspond to each other one by one, and in other application scenarios, the metal electrode bonding area and the first metal bonding area may also be set to be in a non-one-to-one corresponding relationship, for example, the corresponding relationship may be set according to application requirements: two or more metal electrode welding areas correspond to one first metal connecting area, namely the two or more metal electrode welding areas share the same first metal connecting area; two or more first metal connecting areas can be arranged corresponding to one metal electrode welding area according to requirements, namely, the two or more first metal connecting areas share one metal electrode welding area. It should be understood that the first metal connection region in this embodiment may also be a single-layer film structure or a multi-layer film structure, and the material thereof may also be selected from, but not limited to, one or more of Au, Pt, Pd, Rh, Ni, W, Mo, Cr, Ti, Fe, Cu, Al, and Ag, which are not described herein again. And it should be understood that the first metal connection region in this embodiment may be a conductive layer disposed on the back surface of the first insulating plate and electrically connected to the metal conductive member, and in some examples, the first metal connection region may also be an end of the metal conductive member exposed on the back surface of the first insulating plate.
It should be understood that the material of the metal conductive member electrically connecting the metal electrode pad and the first metal connection region in the present embodiment may be the same as the material of the metal electrode pad and/or the first metal connection region. In one example, a through hole for communicating the metal electrode bonding area with the first metal connection area may be provided in an area of the first insulating plate where the metal electrode bonding area and the first metal connection area electrically correspond to each other, and then a metal conductive member may be formed in the through hole, where the formed metal conductive member may be a metal conductive layer distributed along a sidewall of the through hole or a metal conductive pillar filling the through hole. In this example, the material of the metal conductive member may be selected from materials having good heat conductivity, such as Au, Cu, and Ag, in addition to materials having good electric conductivity. And it should be understood that the size and material of the through holes in this example can be flexibly selected, for example, the through holes can be circular holes, elliptical holes, square holes or irregular holes, and the maximum diameter of the through holes can be set to, but not limited to, 0.035 mm-0.3 mm.
In the embodiment, the front surface of the second insulating plate is plated with a second metal connecting area which corresponds to the first metal connecting area and is electrically connected with the first metal connecting area; that is, the front surface of the second insulating plate is disposed opposite to the back surface of the first insulating plate in this embodiment. It should be understood that, in this embodiment, the corresponding relationship between the first metal connection area and the second metal connection area may also be flexibly set, for example, in some application scenarios, the first metal connection area and the second metal connection area may be set to correspond to each other one by one, and in other application scenarios, the first metal connection area and the second metal connection area may also be set to correspond to each other one by one, for example, according to application requirements: two or more first metal connection regions correspond to one second metal connection region, namely the two or more first metal connection regions share the same second metal connection region; two or more second metal connection regions can also be arranged corresponding to one first metal connection region according to requirements, that is, two or more second metal connection regions share one first metal connection region. It should be understood that the second metal connection region in this embodiment may also be a single-layer film structure or a multi-layer film structure, and the material thereof may also be selected from, but not limited to, one or more of Au, Pt, Pd, Rh, Ni, W, Mo, Cr, Ti, Fe, Cu, Al, and Ag, which are not described herein again.
In this embodiment, a third metal connection area corresponding to the second metal connection area is plated on the back surface of the second insulating plate, and the second insulating plate is further provided with a groove for communicating the corresponding second metal connection area with the third metal connection area, and a metal conductive layer formed on a side wall of the groove for electrically connecting the second metal connection area with the third metal connection area. It should be understood that, in this embodiment, the corresponding relationship between the second metal connection area and the third metal connection area may also be flexibly set, for example, in some application scenarios, the second metal connection area and the third metal connection area may be set to correspond to each other one by one, and in other application scenarios, the second metal connection area and the third metal connection area may also be set to correspond to each other one by one, for example, the corresponding relationship may be set according to application requirements: two or more second metal connection regions correspond to one third metal connection region, namely the two or more second metal connection regions share the same third metal connection region; two or more third metal connection regions can also be arranged corresponding to one second metal connection region according to requirements, that is, two or more third metal connection regions share one second metal connection region. It should be understood that the third metal connection region in this embodiment may also be a single-layer film structure or a multi-layer film structure, and the material thereof may also be selected from, but not limited to, one or more of Au, Pt, Pd, Rh, Ni, W, Mo, Cr, Ti, Fe, Cu, Al, and Ag, which are not described herein again. In this embodiment, the material and structure of the metal conductive layer formed on the sidewall of the recess to electrically connect the second metal connection region and the third metal connection region may be the same as or different from at least one of the second metal connection region and the third metal connection region. For example, in one example, the metal conductive layer may be the same material and structure as the second metal connection region, and both may be integrally formed. In other examples, the material and structure of the metal conductive layer and the second metal connection region may be different, and they may be non-integrated structures.
In this example, the third metal connection region, the groove and the metal conductive layer on the inner wall of the groove form a pad for electrically connecting the light emitting diode to the outside, so that the light emitting diode can be soldered to a circuit on a circuit board or a circuit substrate. In the welding process, the adopted solder such as tin paste and the like can be contracted in the groove, so that the space occupied by the solder is greatly reduced, and the short-circuit welding between the adjacent light-emitting diodes is avoided. It should be understood that the material of the solder in this embodiment can be flexibly selected, and the "solder" in this embodiment means a final adhesive layer formed by using a paste which is a mixture of metal powder, flux and organic substance. For example, the solder may contain Sn and other metals. In one example, the solder may contain 50% or more, 60% or more, or 90% or more of Sn with respect to the total metal weight. For example, the solder may be a lead-containing solder alloy such as Sn- -Pb or Sn- -Pb- -Ag series, or a lead-free solder alloy such as Sn- -Ag series alloy, Sn- -Bi series alloy, Sn- -Zn series alloy, Sn- -Sb series or Sn- -Ag- -Cu series alloy.
It should be understood that the shape and size of the groove in this embodiment can be flexibly set according to the requirement, for example, the cross section of the groove can be set to be arc-shaped or square-shaped or other irregular shapes. In this embodiment, the maximum aperture of the groove may be, but is not limited to, 0.25 mm to 0.75 mm. In this embodiment, after the first insulating plate and the second insulating plate are stacked, there is no overlap between the metal conductive member on the first insulating plate and the groove on the second insulating plate, or only a partial overlap. Therefore, the metal conductive piece and the groove are arranged in a staggered mode, and the overall strength of a matrix formed after the first insulating plate and the second insulating plate are bonded in an aligned mode can be improved.
In this embodiment, after the first insulating plate and the second insulating plate are stacked, in one example, the corresponding first metal connection region and the second metal connection region at least partially overlap. In other examples, there is no overlap between the first metal connection region and the second metal connection region, and in this example, the substrate may further include a conductive filler filled between the first metal connection region and the second metal connection region to conductively connect the first metal connection region and the second metal connection region; the conductive filler in this example may be a flexible conductive filler, such as a conductive adhesive, or may be a non-flexible conductive filler, and may be specifically selected flexibly according to requirements.
Optionally, in this embodiment, in order to improve the reliability of the electrical connection between the first metal connection region and the second metal connection region, the substrate further includes a conductive glue layer formed between the first metal connection region and the second metal connection region. For example, in an example, when the first metal connection region and the second metal connection region at least partially overlap, a conductive adhesive layer may be disposed on the first metal connection region and/or the second metal connection region, so that the overlapping portion between the first metal connection region and the second metal connection region forms a tight mechanical connection through the conductive adhesive layer, thereby ensuring reliability and stability of electrical connection thereof, and simultaneously improving airtightness of the joint between the first insulating plate and the second insulating plate, thereby improving protective performance thereof.
It should be understood that the first insulating plate and the second insulating plate in this embodiment may be fixedly connected by, but not limited to, bonding, bayonet structure connection, etc. For example, in one example, an adhesive layer of an insulating material having adhesiveness may be provided on the back surface of the first insulating plate in a region other than the first metal land, and/or an adhesive layer of an insulating material having adhesiveness may be provided on the front surface of the second insulating plate in a region other than the second metal land, and then the first insulating plate and the second insulating plate are bonded by being aligned to each other to complete bonding, thereby forming a base of the double-layer plate.
In this example, the light emitting chip unit is disposed on the front surface of the first insulating plate, and the electrodes of the light emitting chip unit are electrically connected to the corresponding metal electrode pads. It should be understood that in other examples of the present embodiment, other electronic components and corresponding circuits may also be disposed on the front surface of the first insulating plate according to requirements, for example, but not limited to, resistors, diodes, transistors, and the like and their corresponding circuits may be disposed.
It should be understood that the number of light emitting chip units included in the light emitting diode in this example can be flexibly set. For example, in one example, only one light emitting chip unit may be included. In other examples, the light emitting diode includes at least two light emitting chip units, so as to improve the overall brightness of the light emitting diode, thereby better meeting the high brightness requirement in the backlight field.
In this example, when the light emitting diode includes at least two light emitting chip units, the at least two light emitting chip units may be independent from each other, or may be arranged in series, parallel, or a combination of series and parallel connections according to requirements. For example, in one example, at least one electrode of at least two light emitting chip units may share one metal electrode pad, or at least two metal electrode pads share one first metal connection region, or at least two second metal connection regions share one first metal connection region, so as to implement series connection, parallel connection, or combination of series and parallel connection of the at least two light emitting chip units, thereby meeting the requirements of various application scenarios.
Optionally, in some examples of this embodiment, the light emitting diode may further include an encapsulation layer formed on the front surface of the first insulating plate and covering the light emitting chip unit, where the encapsulation layer may include, but is not limited to, a wavelength conversion layer covering the light emitting chip unit, and a white wall glue layer enclosing the wavelength conversion layer. The wavelength conversion layer can be, but is not limited to, a fluorescent glue layer, a quantum dot thin film layer, or a combination of the fluorescent glue layer and the quantum dot thin film layer. The fluorescent glue layer and the quantum dot film layer can realize wavelength conversion of corresponding colors, such as red light, white light, yellow light and the like, and can be flexibly set according to application scenes.
In this embodiment, the white wall glue layer may be on the front surface of the first insulating board, and the light emitting chip units on the front surface of the first insulating board are all enclosed therein, and at this time, no white wall glue layer is used for blocking communication between the light emitting chip units on the front surface of the first insulating board. In another example, the white wall glue layer may be on the front surface of the first insulating board, and the light emitting chip units on the front surface of the first insulating board are enclosed respectively by taking a single light emitting chip unit as a unit, and at this time, the light emitting chip units on the front surface of the first insulating board are isolated from each other by the white wall glue layer. For example, in an example of the present embodiment, the light emitting diode may include at least two light emitting chip units, and a white wall glue layer is formed between adjacent light emitting chip units.
Optionally, in this embodiment, the encapsulation layer further includes a transparent adhesive layer disposed on the wavelength conversion layer, so as to further improve the overall protection performance of the light emitting diode.
For the convenience of understanding, the present embodiment will be described below with reference to the accompanying drawings.
An example of a light emitting diode shown in fig. 1-6 comprises: a light emitting chip unit 5 and a base; the base body comprises a first insulating plate 1 and a second insulating plate 2 which are arranged in a stacked mode; the front surface of the first insulating plate 1 is plated with a plurality of metal electrode welding areas 11 which are insulated and isolated from each other, the back surface of the first insulating plate 1 is provided with a first metal connecting area 14 corresponding to the metal electrode welding areas 11, and the first insulating plate 1 is also provided with a metal conductive piece 13 which penetrates through the front surface and the back surface to electrically connect the metal electrode welding areas 11 with the first metal connecting area 14; the front surface of the second insulating plate 2 is plated with a second metal connection region 22 corresponding to the first metal connection region 14 and forming an electrical connection therewith; the back of the second insulating plate 2 is plated with a third metal connection area 23 corresponding to the second metal connection area 22, the second insulating plate 2 is also provided with a groove 21 for communicating the second metal connection area 22 with the third metal connection area 23, and a metal conductive layer 24 formed on the side wall of the groove 21 and used for electrically connecting the second metal connection area 22 with the third metal connection area 23; the light emitting chip unit 5 is disposed on the front surface of the first insulating plate 1, and electrodes of the light emitting chip unit 5 are electrically connected to the corresponding metal electrode pads 11.
In this embodiment, the light emitting diode further includes a packaging layer formed on the front surface of the first insulating plate 1 and covering the light emitting chip unit 5, wherein the packaging layer includes a wavelength conversion layer 32 covering the light emitting chip unit 5, and a white wall glue layer 31 enclosed by the wavelength conversion layer 32. Referring to fig. 1-6, the led includes two light emitting chip units 5 (the number of the light emitting chip units can be flexibly adjusted), and a white wall glue layer 31 is formed between adjacent light emitting chip units 5. In another example, please refer to fig. 9 to 10, the adjacent light emitting chip units 5 may be communicated without the white wall glue layer 31. Optionally, in some examples, the encapsulation layer further includes a transparent glue layer disposed over the wavelength converting layer 32.
Referring to fig. 4, the cross section of the groove 21 in this example is arc-shaped, but in other examples, the cross section of the groove 21 may be square or other shapes.
Referring to fig. 8, an adhesive glue layer 25 is provided on the front surface of the second insulating plate 2 in the present embodiment, the adhesive glue layer 25 being provided outside the area of the second metal connecting region 22. The adhesive layer 25 can be used to achieve alignment bonding between the first insulating plate 1 and the second insulating plate 2.
Referring to fig. 6, in one example of the present embodiment, a conductive layer conductively connected to metal conductive member 13 is provided as first metal connection region 14 on the back surface of first insulating plate 1. Referring to fig. 7, in another example of the present embodiment, one end of metal conductive member 13 exposed to the back surface of first insulating plate 1 is used as first metal connection region 14.
In an example of the present embodiment, referring to fig. 11, after the first insulating plate 1 and the second insulating plate 2 are stacked, the first metal connection region 14 and the second metal connection region 22 may at least partially overlap, and an electrical connection may be formed between the first metal connection region 14 and the second metal connection region 22 through the overlapping region. Optionally, in this embodiment, a conductive adhesive layer may be further disposed on the first metal connection region 14 and/or the second metal connection region 22, so that the electrical connection between the first metal connection region 14 and the second metal connection region 22 is more reliable and tight.
In another example of the present embodiment, referring to fig. 12, after the first insulating plate 1 and the second insulating plate 2 are stacked, the first metal connection region 14 overlaps the second metal connection region 22, and the first metal connection region 14 is an end of the metal conductive member 13 exposed from the back surface of the first insulating plate 1. An electrical connection between the first metal connection region 14 and the second metal connection region 22 can be formed through this overlap region. And optionally, in this example, a conductive glue layer may also be disposed on the first metal connection region 14 and/or the second metal connection region 22, so as to make the electrical connection between the first metal connection region 14 and the second metal connection region 22 more close and reliable.
In still another example of the present embodiment, referring to fig. 13, after the first insulating plate 1 and the second insulating plate 2 are stacked, the first metal connection region 14 and the second metal connection region 22 do not overlap, and a conductive filler 6, which may be but not limited to a conductive glue layer, may be disposed in a gap between the first metal connection region 14 and the second metal connection region 22, and an electrical connection may be formed between the first metal connection region 14 and the second metal connection region 22 through the conductive filler.
Referring to fig. 2, 5 and 10, in the present embodiment, after the first insulating plate 1 and the second insulating plate 2 are stacked, the metal conductive member 13 on the first insulating plate 1 and the groove 21 on the second insulating plate 2 are not overlapped and are staggered.
Referring to fig. 1 to 10, optionally, the light emitting diode in the present embodiment may further include at least one of a white oil layer 41 and a green oil layer 42 disposed at the bottom of the second insulating plate 2.
Referring to fig. 1 to 10, the light emitting diode includes two light emitting chip units 5, wherein one positive electrode and one negative electrode of the two light emitting chip units 5 are respectively connected to a first metal connection region 14 through two metal electrode pads 11 to form a conductive connection.
The embodiment also provides a backlight module, which comprises a display back plate and a plurality of light emitting diodes as shown above, wherein the plurality of light emitting diodes are arranged on the display back plate, can be used as a front light source and a side light source, and can be flexibly arranged according to application requirements. It should be understood that the backlight module in this embodiment can be applied to, but not limited to, an electronic device having a display screen, such as a mobile phone, a television, a display, an IPAD, or various advertisement devices. Because the light emitting diodes used by the backlight module have the structure, the distance between the light emitting diodes can be smaller, more light emitting diodes can be arranged in the same area, the overall brightness is better, the heat dissipation performance is better, the black edge size of the manufactured backlight module is smaller, and the user experience satisfaction is higher.
The foregoing is a more detailed description of embodiments of the present invention, and the present invention is not to be considered limited to such descriptions. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (11)
1. A light emitting diode, comprising:
a light emitting chip unit and a base;
the base body comprises a first insulating plate and a second insulating plate which are arranged in a stacked mode; the front surface of the first insulating plate is plated with a plurality of metal electrode welding areas which are insulated and isolated from each other, the back surface of the first insulating plate is provided with a first metal connecting area corresponding to the metal electrode welding areas, and the first insulating plate is also provided with a metal conductive piece which penetrates through the front surface and the back surface to electrically connect the metal electrode welding areas and the first metal connecting area;
the front surface of the second insulating plate is plated with a second metal connecting area which corresponds to the first metal connecting area and is electrically connected with the first metal connecting area; the back surface of the second insulating plate is plated with a third metal connecting area corresponding to the second metal connecting area, the second insulating plate is also provided with a groove for communicating the corresponding second metal connecting area with the third metal connecting area, and a metal conducting layer which is formed on the side wall of the groove and is used for electrically connecting the second metal connecting area with the third metal connecting area;
the light-emitting chip unit is arranged on the front surface of the first insulating plate, and the electrode of the light-emitting chip unit is electrically connected with the corresponding metal electrode welding area.
2. The led of claim 1, further comprising an encapsulation layer formed on the front surface of the first insulating plate to cover the light emitting chip units, wherein the encapsulation layer comprises a wavelength conversion layer to cover the light emitting chip units, and a white wall glue layer to enclose the wavelength conversion layer.
3. The led of claim 2, wherein the led comprises at least two light emitting chip units, and the white wall glue layer is formed between adjacent light emitting chip units.
4. The light-emitting diode of claim 2, wherein the encapsulation layer further comprises a layer of transparent glue disposed over the wavelength converting layer.
5. The light-emitting diode according to any one of claims 1 to 4, wherein the cross section of the groove is arc-shaped or square-shaped.
6. The light-emitting diode according to any one of claims 1 to 4, wherein the metal conductive member does not overlap the recess after the first insulating plate and the second insulating plate are stacked.
7. The light-emitting diode according to any one of claims 1 to 4, wherein the first metal connection region and the second metal connection region at least partially overlap or do not overlap after the first insulating sheet and the second insulating sheet are stacked, and the substrate further comprises a conductive filler filled between the first metal connection region and the second metal connection region to conductively connect the first metal connection region and the second metal connection region.
8. The light-emitting diode according to claim 7, wherein the substrate further comprises a layer of conductive glue formed between the first metal connection region and the second metal connection region.
9. The light-emitting diode according to any one of claims 1 to 4, wherein the light-emitting diode includes at least two of the light-emitting chip units, at least one electrode of at least two of the light-emitting chip units shares one of the metal electrode pads, or at least two of the metal electrode pads share one of the first metal connection regions.
10. The light-emitting diode according to any one of claims 1 to 4, wherein the metal electrode pad comprises a copper-plated layer, a nickel-plated layer and a gold-plated layer provided in this order from bottom to top on the front surface of the first insulating plate.
11. A backlight module, comprising a display back plate and a plurality of leds as claimed in any one of claims 1 to 9, the plurality of leds being disposed on the display back plate.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011040061.2A CN112331638B (en) | 2020-09-28 | 2020-09-28 | Light emitting diode and backlight module |
| EP21868759.8A EP4216275A1 (en) | 2020-09-21 | 2021-09-18 | Substrate, and led light source assembly and manufacturing method therefor |
| US18/027,223 US20230411574A1 (en) | 2020-09-21 | 2021-09-18 | Substrate, led light source assembly and manufacturing methods therefor |
| PCT/CN2021/119458 WO2022057937A1 (en) | 2020-09-21 | 2021-09-18 | Substrate, and led light source assembly and manufacturing method therefor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011040061.2A CN112331638B (en) | 2020-09-28 | 2020-09-28 | Light emitting diode and backlight module |
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| CN112331638A true CN112331638A (en) | 2021-02-05 |
| CN112331638B CN112331638B (en) | 2023-06-06 |
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Cited By (1)
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