CN112331638B - Light emitting diode and backlight module - Google Patents
Light emitting diode and backlight module Download PDFInfo
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- CN112331638B CN112331638B CN202011040061.2A CN202011040061A CN112331638B CN 112331638 B CN112331638 B CN 112331638B CN 202011040061 A CN202011040061 A CN 202011040061A CN 112331638 B CN112331638 B CN 112331638B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Abstract
The invention provides a light-emitting diode and a backlight module, wherein a third metal connection area of the light-emitting diode and a corresponding groove are used as bonding pads for welding the light-emitting diode outwards, and when the light-emitting diode is welded on a circuit board or a circuit substrate, solder such as solder paste used in the welding process can be contracted in the groove, so that short circuit connection with the solder on the adjacent bonding pads is avoided, and meanwhile, the small-size arrangement and the small-space arrangement of the light-emitting diode are facilitated, and the light mixing effect is improved; the LED adopts the matrix formed by the first insulating plate and the second insulating plate, and compared with a single-layer matrix with the same thickness, the heat generated by the LED chip can be more rapidly transferred to the second insulating plate below, so that the heat dissipation path can be greatly shortened, and the heat dissipation performance and the light emitting performance of the LED are improved.
Description
Technical Field
The invention relates to the field of LEDs (Light Emitting Diode, light emitting diodes), in particular to a light emitting diode and a backlight module.
Background
With the development of electronic semiconductor technology, the application of LEDs in the lighting field and the display field has become increasingly mature and widespread. In the display field, LEDs are used as backlight sources, in order to improve the display effect, the distance between the LEDs as backlight sources is required to be smaller and smaller, and the size of the LEDs is also required to be smaller and smaller, so that the light mixing effect of the backlight module is improved. When the current LED is applied to the backlight field, the following problems exist: the smaller and smaller spacing between LEDs results in smaller and smaller electrode spacing between adjacent LEDs, and during soldering, the solder paste used to solder the electrodes between adjacent LEDs is prone to interconnection and short circuits. In addition, the smaller the size of the LED, the smaller the heat dissipation area thereof, which results in the poorer and worse heat dissipation performance of the LED, so how to improve the heat dissipation performance of the LED is also a technical problem which is continuously solved at present.
Disclosure of Invention
The invention provides a light-emitting diode and a backlight module, which solve the problems that the existing LED is easy to generate short circuit during welding and the heat dissipation performance of the existing LED is poor.
In order to solve the above technical problems, an embodiment of the present invention provides a light emitting diode, including:
a light emitting chip unit and a substrate;
the substrate comprises a first insulating plate and a second insulating plate which are stacked; the front surface of the first insulating plate is plated with a plurality of metal electrode welding areas which are insulated and isolated from each other, the back surface of the first insulating plate is provided with a first metal connecting area corresponding to the metal electrode welding area, and the first insulating plate is also provided with a metal conductive piece penetrating through the front surface and the back surface so as to electrically connect the metal electrode welding area with the first metal connecting area;
the front surface of the second insulating plate is plated with a second metal connecting area which corresponds to the first metal connecting area and is electrically connected with the first metal connecting area; a third metal connection area corresponding to the second metal connection area is plated on the back surface of the second insulating plate, a groove which is used for communicating the corresponding second metal connection area with the third metal connection area is further formed on the second insulating plate, and a metal conductive layer which is formed on the side wall of the groove and used for conducting connection between the second metal connection area and the third metal connection area;
the light-emitting chip unit is arranged on the front surface of the first insulating plate, and the electrode of the light-emitting chip unit is electrically connected with the corresponding metal electrode welding area.
Optionally, the light emitting diode further includes an encapsulation layer formed on the front surface of the first insulating plate, covering the light emitting chip unit, where the encapsulation layer includes a wavelength conversion layer covering the light emitting chip unit, and a white wall glue layer surrounding the wavelength conversion layer.
Optionally, the light emitting diode includes at least two light emitting chip units, and the white wall glue layer is formed between adjacent light emitting chip units.
Optionally, the encapsulation layer further includes a transparent glue layer disposed over the wavelength conversion layer.
Optionally, the cross section of the groove is arc-shaped or square.
Optionally, after the first insulating plate and the second insulating plate are stacked, the metal conductive member does not overlap with the groove.
Optionally, after the first insulating plate and the second insulating plate are stacked, the first metal connection area and the second metal connection area at least partially overlap, or the first metal connection area and the second metal connection area do not overlap, and the substrate further includes a conductive filler filled between the first metal connection area and the second metal connection area to electrically connect the first metal connection area and the second metal connection area.
Optionally, the substrate further includes a conductive adhesive layer formed between the first metal connection region and the second metal connection region.
Optionally, the light emitting diode includes at least two light emitting chip units, at least one electrode of the at least two light emitting chip units shares one metal electrode welding area, or at least two metal electrode welding areas share one first metal connection area.
Optionally, the metal electrode welding area includes a copper plating layer, a nickel plating layer and a gold plating layer sequentially disposed on the front surface of the first insulating plate from bottom to top.
In order to solve the technical problem, the invention also provides a backlight module, which comprises a display backboard and a plurality of light emitting diodes, wherein the light emitting diodes are arranged on the display backboard.
Advantageous effects
The invention provides a light-emitting diode and a backlight module, wherein the light-emitting diode comprises a light-emitting chip unit and a matrix; the substrate comprises a first insulating plate and a second insulating plate which are stacked; the front surface of the first insulating plate is plated with a plurality of metal electrode welding areas which are insulated and isolated from each other and are used for correspondingly welding with the electrodes of the light-emitting chip units; the back of the first insulating plate is provided with a first metal connecting area corresponding to the metal electrode welding area, and the first insulating plate is also provided with a metal conductive piece penetrating through the front and the back to electrically connect the metal electrode welding area with the first metal connecting area; the front surface of the second insulating plate is plated with a second metal connecting area corresponding to the first metal connecting area and electrically connected with the first metal connecting area, the back surface of the second insulating plate is plated with a third metal connecting area corresponding to the second metal connecting area, the second insulating plate is also provided with a groove for communicating the second metal connecting area with the third metal connecting area and a metal conductive layer formed on the side wall of the groove for electrically connecting the second metal connecting area with the third metal connecting area, so that the electrode of the light-emitting chip unit can be electrically connected with the outside through the metal electrode welding area, the first metal connecting area, the second metal connecting area and the third metal connecting area which are arranged in sequence, and the third metal connecting area and the corresponding groove are used as welding pads for welding the light-emitting diode to the outside; the light-emitting diode provided by the invention has at least the following advantages:
the third metal connection area and the corresponding groove are used as bonding pads for welding the light-emitting diode outwards, and when the light-emitting diode is welded on a circuit board or a circuit substrate, solder such as solder paste used in the welding process can be contracted in the groove, so that short circuit connection with the solder on the adjacent bonding pad is avoided, and meanwhile, the small-size arrangement and the small-space arrangement of the light-emitting diode are facilitated, and the light mixing effect is facilitated;
the LED adopts the matrix formed by the first insulating plate and the second insulating plate, and compared with a single-layer matrix with the same thickness, the heat generated by the LED chip can be more rapidly transferred to the second insulating plate below, so that the heat dissipation path can be greatly shortened, and the heat dissipation performance and the light emitting performance of the LED are improved.
Drawings
Fig. 1 is a schematic perspective view of a light emitting diode according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a light emitting diode according to an embodiment of the present invention;
FIG. 3 is a schematic perspective view of a substrate according to an embodiment of the present invention;
FIG. 4 is a schematic bottom view of a substrate according to an embodiment of the present invention;
FIG. 5 is a cross-sectional view of a substrate provided by an embodiment of the present invention;
fig. 6 is a cross-sectional view of a first insulating plate according to an embodiment of the present invention;
fig. 7 is a second cross-sectional view of the first insulating plate according to the embodiment of the present invention;
FIG. 8 is a cross-sectional view of a second insulating plate according to an embodiment of the present invention;
FIG. 9 is a perspective view of another LED according to an embodiment of the present invention;
FIG. 10 is a cross-sectional view of another LED according to an embodiment of the present invention;
FIG. 11 is a schematic diagram illustrating an overlapping of a first metal connection region and a second metal connection region according to an embodiment of the present invention;
FIG. 12 is a schematic diagram showing a second overlapping of a first metal connection region and a second metal connection region according to an embodiment of the present invention;
fig. 13 is a schematic diagram showing that the first metal connection region and the second metal connection region have no overlap according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following detailed description of the embodiments of the present invention is given with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The embodiment provides a light-emitting diode with simple structure, good heat dissipation performance and more favorable size miniaturization of the light-emitting diode, wherein a matrix of the light-emitting diode is formed by a double-layer substrate formed by a first insulating plate and a second insulating plate, and a metal electrode welding area and a metal connecting area which are sequentially and correspondingly arranged on the double-layer substrate, the metal electrode welding area and the metal connecting area form a groove which can electrically connect a light-emitting chip unit arranged on the matrix with the outside, and the second insulating plate is also provided with solder such as solder paste. It should be understood that the materials of the first insulating plate and the second insulating plate in this embodiment may be flexibly selected, and at least one of the first insulating plate and the second insulating plate may be a rigid substrate or a flexible substrate. For example, in one example, the first insulating plate and the second insulating plate may be both rigid substrates, may be both flexible substrates, or may be one of the rigid substrates and the other of the flexible substrates. It should be understood that the light emitting chip unit in this embodiment may employ, but is not limited to, a front-mounted LED chip, a flip-chip LED chip, or a vertical LED chip.
For ease of understanding, this embodiment will be described below as further examples of light emitting diodes.
The light emitting diode provided in this embodiment includes a substrate that is a double-layer insulating plate, and a light emitting chip unit that is fixedly and electrically connected to be disposed on the substrate, wherein:
the substrate comprises a first insulating plate and a second insulating plate which are arranged in a laminated mode, the first insulating plate is located on the second insulating plate, the front face of the first insulating plate is plated with a plurality of metal electrode welding areas which are insulated and isolated from each other, and one metal electrode welding area can be used for welding one electrode of one light-emitting chip unit and can also be used for welding electrodes of two or more light-emitting chip units. The material of the metal electrode welding area can be flexibly selected and arranged, and the structure can be flexibly selected and arranged. For example, in one example, the metal electrode welding area can be a single-layer film structure or a multi-layer film structure, and the material can be one or more of Au, pt, pd, rh, ni, W, mo, cr, ti, fe, cu, al and Ag. For example, in one example, the metal electrode pad may include a Cu-plated layer, a Ni-plated layer, and an Au-plated layer disposed in this order from bottom to top on the front surface of the first insulating plate.
In this embodiment, the back surface of the first insulating plate is provided with a first metal connection region corresponding to the metal electrode welding region, and the first insulating plate is further provided with a metal conductive member penetrating through the front surface and the back surface to electrically connect the metal electrode welding region and the first metal connection region; it should be understood that, in this embodiment, the correspondence between the metal electrode welding area and the first metal connection area may be flexibly set, for example, in some application scenarios, the metal electrode welding area and the first metal connection area may be set to be in one-to-one correspondence, and in other application scenarios, the metal electrode welding area and the first metal connection area may also be set to be in a non-one correspondence, for example, may be set according to application requirements: two or more metal electrode welding areas correspond to a first metal connecting area, namely, the two or more metal electrode welding areas share the first metal connecting area; two or more first metal connection regions can be arranged corresponding to one metal electrode welding region according to the requirement, namely, the two or more first metal connection regions share one metal electrode welding region. It should be understood that the first metal connection region in this embodiment may also have a single-layer film structure or a multi-layer film structure, and the material thereof may also be selected from, but not limited to, one or more of Au, pt, pd, rh, ni, W, mo, cr, ti, fe, cu, al, ag, which will not be described herein. And it should be understood that the first metal connection region in this embodiment may be a conductive layer disposed on the back surface of the first insulating plate and electrically connected to the metal conductive member, and in some examples, the first metal connection region may also be an end of the metal conductive member exposed on the back surface of the first insulating plate.
It should be understood that the material of the metal conductive member electrically connecting the metal electrode bonding area and the first metal connection area in this embodiment may be the same as the material of the metal electrode bonding area and/or the first metal connection area. In one example, a through hole for connecting the metal electrode bonding area with the first metal connection area may be formed in an area of the first insulating plate, where the metal electrode bonding area corresponds to the first metal connection area electrically, and then a metal conductive member may be formed in the through hole, where the formed metal conductive member may be a metal conductive layer distributed along a through sidewall, or may be a metal conductive column filled with the through hole. In this example, the metal conductive member may be made of a material having good heat conductivity, for example, au, cu, ag, or the like, in addition to a material having good electrical conductivity. And it should be understood that the size and material of the through hole in this example may be chosen flexibly, for example, the through hole may be a circular hole, an oval hole, a square hole or an irregularly shaped hole, and the maximum pore diameter of the through hole may be set to be, but not limited to, 0.035 mm-0.3 mm.
In this embodiment, the front surface of the second insulating plate is plated with a second metal connection region corresponding to and electrically connected with the first metal connection region; that is, in this embodiment, the front surface of the second insulating plate is disposed opposite to the back surface of the first insulating plate. It should be understood that, in the present embodiment, the correspondence between the first metal connection area and the second metal connection area may be flexibly set, for example, in some application scenarios, the first metal connection area and the second metal connection area may be set to be in one-to-one correspondence, and in other application scenarios, the first metal connection area and the second metal connection area may be set to be in a non-one correspondence, for example, may be set to be set according to application requirements: two or more first metal connection regions correspond to one second metal connection region, i.e., the two or more first metal connection regions share one second metal connection region; two or more second metal connection regions may be provided corresponding to one first metal connection region according to the requirement, that is, two or more second metal connection regions share one first metal connection region. It should be understood that the second metal connection region in this embodiment may also have a single-layer film structure or a multi-layer film structure, and the material thereof may also be selected from, but not limited to, one or more of Au, pt, pd, rh, ni, W, mo, cr, ti, fe, cu, al, ag, which will not be described herein.
The back of the second insulating plate in this embodiment is plated with a third metal connection region corresponding to the second metal connection region, and the second insulating plate is further provided with a groove for communicating the corresponding second metal connection region with the third metal connection region, and a metal conductive layer formed on a sidewall of the groove for conductively connecting the second metal connection region with the third metal connection region. It should be understood that, in the present embodiment, the correspondence between the second metal connection area and the third metal connection area may be flexibly set, for example, in some application scenarios, the second metal connection area and the third metal connection area may be set to be in one-to-one correspondence, and in other application scenarios, the second metal connection area and the third metal connection area may be set to be in a non-one correspondence, for example, may be set to be set according to application requirements: two or more second metal connection regions correspond to one third metal connection region, i.e., the two or more second metal connection regions share one third metal connection region; two or more third metal connection regions can be arranged corresponding to one second metal connection region according to the requirement, namely, the two or more third metal connection regions share one second metal connection region. It should be understood that the third metal connection region in this embodiment may also have a single-layer film structure or a multi-layer film structure, and the material thereof may also be selected from, but not limited to, one or more of Au, pt, pd, rh, ni, W, mo, cr, ti, fe, cu, al, ag, which will not be described herein. In this embodiment, the material and structure of the metal conductive layer formed on the sidewall of the groove to conductively connect the second metal connection region and the third metal connection region may be the same as or different from at least one of the second metal connection region and the third metal connection region. For example, in one example, the metal conductive layer may be the same material and structure as the second metal connection region, and both may be integrally formed. In other examples, the material and structure of the conductive layer and the second metal connection region may be different, and the conductive layer and the second metal connection region may be non-integrally formed.
In this example, the third metal connection region, the groove and the metal conductive layer on the inner wall of the groove form a bonding pad for external connection of the light emitting diode pair, so that the light emitting diode pair is correspondingly bonded with the upper circuit such as the circuit board or the circuit substrate. And in the welding process, the solder such as solder paste can be contracted in the groove, so that the space occupied by the solder is greatly reduced, and the short circuit welding between adjacent light emitting diodes is avoided. It should be understood that the material of the solder in this embodiment can be flexibly selected, and that "solder" in this embodiment means a final adhesive layer formed using paste as a mixture of metal powder, flux and organic matter. For example, the solder may contain Sn and other metals. In one example, the solder may contain 50% or more, 60% or more, or 90% or more of Sn relative to the total metal weight. For example, the solder may be a lead-containing solder alloy such as Sn-Pb or Sn-Pb-Ag-based, or a lead-free solder alloy such as Sn-Ag-based alloy, sn-Bi-based alloy, sn-Zn-based alloy, sn-Sb-based or Sn-Ag-Cu-based alloy.
It should be understood that the shape and size of the groove in this embodiment may be flexibly set according to requirements, for example, the cross section of the groove may be arc-shaped or square or other irregular shape. In this embodiment, the maximum aperture of the grooves may be, but is not limited to, 0.25 mm to 0.75 mm. In this embodiment, after the first insulating plate and the second insulating plate are stacked, there is no overlap or only partial overlap between the metal conductive member on the first insulating plate and the groove on the second insulating plate. The positions of the metal conductive piece and the groove are staggered, so that the integral strength of a matrix formed after the first insulating plate and the second insulating plate are aligned and bonded can be improved.
In this embodiment, after the first insulating plate and the second insulating plate are stacked, in one example, the corresponding first metal connection region and second metal connection region at least partially overlap. In other examples, there is no overlap between the first metal connection region and the second metal connection region, in which case the substrate may further include a conductive filler filled between the first metal connection region and the second metal connection region to conductively connect the two; the conductive filler in this example may be a flexible conductive filler, such as conductive adhesive, or may be a non-flexible conductive filler, and may be flexibly selected according to requirements.
Optionally, in this embodiment, in order to improve the reliability of the electrical connection between the first metal connection region and the second metal connection region, the substrate further includes a conductive adhesive layer formed between the first metal connection region and the second metal connection region. For example, in one example, when the first metal connection region and the second metal connection region at least partially overlap, a conductive adhesive layer may be disposed on the first metal connection region and/or the second metal connection region, so that an overlapping portion between the first metal connection region and the second metal connection region forms a tight mechanical connection through the conductive adhesive layer, thereby ensuring reliability and stability of electrical connection thereof, and improving air tightness of the combination between the first insulating plate and the second insulating plate, thereby improving protective performance thereof.
It should be understood that the first insulating plate and the second insulating plate in this embodiment may be fixedly connected by, but not limited to, bonding, bayonet structure connection, and the like. For example, in one example, an adhesive layer of an adhesive insulating material may be disposed on the back surface of the first insulating plate in an area other than the first metal connection area, and/or an adhesive layer of an adhesive insulating material may be disposed on the front surface of the second insulating plate in an area other than the second metal connection area, and then the first insulating plate and the second insulating plate are aligned and bonded to each other to complete bonding, thereby forming a matrix of the double-layer plate.
In this example, the light emitting chip unit is disposed on the front surface of the first insulating plate, and the electrode of the light emitting chip unit is electrically connected with the corresponding metal electrode land. It should be understood that in other examples of the present embodiment, other electronic components and corresponding circuits may be disposed on the front surface of the first insulating plate as required, for example, but not limited to, resistors, diodes, transistors, and other components and their corresponding circuits may be disposed.
It should be understood that the number of light emitting chip units included in the light emitting diode in this example may be flexibly set. For example, in one example, only one light emitting chip unit may be included. In other examples, the light emitting diode includes at least two light emitting chip units, so that the overall brightness of the light emitting diode is improved, and the light emitting diode is better suitable for the high brightness requirement in the backlight field.
In this example, when the light emitting diode includes at least two light emitting chip units, the at least two light emitting chip units may be independent from each other, or may be arranged in series connection, parallel connection, or a combination of series and parallel connection according to the need. For example, in one example, at least one electrode of at least two light emitting chip units may be connected in series, connected in parallel, or connected in series or connected in parallel by sharing one metal electrode welding area, or sharing one first metal connection area by at least two metal electrode welding areas, or sharing one first metal connection area by at least two second metal connection areas, so as to meet the requirements of various application scenarios.
Optionally, in some examples of the present embodiment, the light emitting diode may further include an encapsulation layer formed on the front surface of the first insulating plate to cover the light emitting chip unit, and the encapsulation layer may include, but is not limited to, a wavelength conversion layer to cover the light emitting chip unit, and a white wall glue layer surrounding the wavelength conversion layer. The wavelength conversion layer may be, but is not limited to, a fluorescent glue layer, a quantum dot thin film layer, or a combination of a fluorescent glue layer and a quantum dot thin film layer. The fluorescent glue layer and the quantum dot film layer can realize wavelength conversion of corresponding colors, such as red light, white light, yellow light and the like, and can be flexibly set according to application scenes.
In this embodiment, the white wall glue layer may be on the front surface of the first insulating plate, and the light emitting chip units on the front surface of the first insulating plate are all enclosed therein, so that the communication between the light emitting chip units on the front surface of the first insulating plate is not blocked by the white wall glue layer. In another example, the white wall adhesive layer may be on the front surface of the first insulating plate, and each light emitting chip unit on the front surface of the first insulating plate is enclosed in each light emitting chip unit by taking a single light emitting chip unit as a unit, and then the light emitting chip units on the front surface of the first insulating plate are isolated by the white wall adhesive layer. For example, in one example of the present embodiment, the light emitting diode may include at least two light emitting chip units, and a white wall glue layer is formed between adjacent light emitting chip units.
Optionally, in this embodiment, the encapsulation layer further includes a transparent adhesive layer disposed on the wavelength conversion layer, so that the overall protection performance of the light emitting diode can be further improved.
In order to facilitate understanding, the structure of the light emitting diode will be exemplified below with reference to the drawings.
An example is shown in fig. 1-6 for a light emitting diode, comprising: a light emitting chip unit 5 and a base; the substrate comprises a first insulating plate 1 and a second insulating plate 2 which are stacked; the front surface of the first insulating plate 1 is plated with a plurality of metal electrode welding areas 11 which are insulated and isolated from each other, the back surface of the first insulating plate 1 is provided with a first metal connecting area 14 corresponding to the metal electrode welding areas 11, and the first insulating plate 1 is also provided with a metal conductive piece 13 penetrating through the front surface and the back surface to electrically connect the metal electrode welding areas 11 with the first metal connecting area 14; the front surface of the second insulating plate 2 is plated with a second metal connection region 22 corresponding to and electrically connected with the first metal connection region 14; the back of the second insulating plate 2 is plated with a third metal connection region 23 corresponding to the second metal connection region 22, the second insulating plate 2 is also provided with a groove 21 for communicating the second metal connection region 22 with the third metal connection region 23, and a metal conductive layer 24 formed on the side wall of the groove 21 for conductively connecting the second metal connection region 22 with the third metal connection region 23; the light emitting chip unit 5 is disposed on the front surface of the first insulating plate 1, and electrodes of the light emitting chip unit 5 are electrically connected to the corresponding metal electrode lands 11.
In this embodiment, the light emitting diode further includes an encapsulation layer formed on the front surface of the first insulating plate 1 and covering the light emitting chip unit 5, wherein the encapsulation layer includes a wavelength conversion layer 32 covering the light emitting chip unit 5, and a white wall glue layer 31 surrounding the wavelength conversion layer 32. Referring to fig. 1-6, the led includes two light emitting chip units 5 (of course, the number of the light emitting chip units can be flexibly adjusted), and a white wall glue layer 31 is formed between the adjacent light emitting chip units 5. In another example, referring to fig. 9 to 10, the white-wall-free glue layer 31 may also be communicated between the adjacent light emitting chip units 5. Optionally, in some examples, the encapsulation layer further includes a transparent glue layer disposed over the wavelength conversion layer 32.
Referring to fig. 4, the cross section of the groove 21 in this example is arc-shaped, although in other examples, the cross section of the groove 21 may be square or other shapes.
Referring to fig. 8, in this embodiment, an adhesive layer 25 is disposed on the front surface of the second insulating plate 2, and the adhesive layer 25 is disposed outside the area of the second metal connection region 22. The adhesive layer 25 can be used to achieve a para-adhesive bond between the first insulating plate 1 and the second insulating plate 2.
Referring to fig. 6, in one example of the present embodiment, a conductive layer electrically connected to the metal conductive member 13 is provided on the back surface of the first insulating plate 1 as the first metal connection region 14. Referring to fig. 7, in another example of the present embodiment, one end of the metal conductive member 13 exposed to the back surface of the first insulating plate 1 is taken as a first metal connection region 14.
In an example of the present embodiment, referring to fig. 11, after the first insulating plate 1 and the second insulating plate 2 are stacked, the first metal connection region 14 and the second metal connection region 22 may at least partially overlap, and an electrical connection may be formed between the first metal connection region 14 and the second metal connection region 22 through the overlapping region. And optionally, in this embodiment, a conductive adhesive layer may also be disposed on the first metal connection region 14 and/or the second metal connection region 22, so that the electrical connection between the first metal connection region 14 and the second metal connection region 22 is more tightly and reliably.
In another example of the present embodiment, as shown in fig. 12, after the first insulating plate 1 and the second insulating plate 2 are stacked, the first metal connection region 14 overlaps the second metal connection region 22, and the first metal connection region 14 is an end of the metal conductive member 13 exposed from the back surface of the first insulating plate 1. An electrical connection may be made between the first metal connection region 14 and the second metal connection region 22 through the overlap region. And optionally, in this example, a conductive glue layer may also be disposed on the first metal connection region 14 and/or the second metal connection region 22, so that the electrical connection between the first metal connection region 14 and the second metal connection region 22 is more reliable.
In yet another example of this embodiment, referring to fig. 13, after the first insulating plate 1 and the second insulating plate 2 are stacked, the first metal connection region 14 and the second metal connection region 22 are not overlapped, and a conductive filler 6, which may be, but not limited to, a conductive adhesive layer, may be disposed in a gap between the first metal connection region 14 and the second metal connection region 22, and an electrical connection may be formed between the first metal connection region 14 and the second metal connection region 22 through the conductive filler.
Referring to fig. 2, 5 and 10, in the present embodiment, after the first insulating plate 1 and the second insulating plate 2 are stacked, there is no overlap between the metal conductive member 13 on the first insulating plate 1 and the groove 21 on the second insulating plate 2, and the positions of the two are staggered.
As shown in fig. 1 to 10, the light emitting diode in the present embodiment may further include at least one of a white oil layer 41 and a green oil layer 42 disposed at the bottom of the second insulating plate 2.
Referring to fig. 1 to 10, the light emitting diode includes two light emitting chip units 5, and one positive electrode and one negative electrode of the two light emitting chip units 5 are connected to one first metal connection region 14 through two metal electrode bonding regions 11, respectively, to form conductive connection.
The embodiment also provides a backlight module, which comprises a display back plate and a plurality of light emitting diodes as shown above, wherein the light emitting diodes are arranged on the display back plate and can be used as a positive light source or a side light source, and particularly can be flexibly arranged according to application requirements. It should be understood that the backlight module in this embodiment may be applied to, but not limited to, mobile phones, televisions, displays, IPAD, or various electronic devices with display screens, such as advertising devices. The light emitting diode used by the backlight module has the advantages that the space between the light emitting diodes can be smaller, more light emitting diodes can be arranged under the same area, the overall brightness is better, the heat dissipation performance is better, the black edge size of the prepared backlight module is smaller, and the user experience satisfaction is higher.
The foregoing is a further detailed description of embodiments of the invention in connection with the specific embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (10)
1. A light emitting diode, comprising:
a light emitting chip unit and a substrate;
the substrate comprises a first insulating plate and a second insulating plate which are stacked; the front surface of the first insulating plate is plated with a plurality of metal electrode welding areas which are insulated and isolated from each other, the back surface of the first insulating plate is provided with a first metal connecting area corresponding to the metal electrode welding areas, the first insulating plate is also provided with a metal conducting piece which penetrates through the front surface and the back surface to electrically connect the metal electrode welding areas with the first metal connecting area, and the first metal connecting area is a conducting layer electrically connected with the metal conducting piece;
the front surface of the second insulating plate is plated with a second metal connecting area which corresponds to the first metal connecting area and is electrically connected with the first metal connecting area, the first metal connecting area and the second metal connecting area are not overlapped, and the substrate also comprises conductive fillers filled between the first metal connecting area and the second metal connecting area and used for electrically connecting the first metal connecting area and the second metal connecting area; a third metal connection area corresponding to the second metal connection area is plated on the back surface of the second insulating plate, a groove which is used for communicating the corresponding second metal connection area with the third metal connection area is further formed on one side of the second insulating plate, and a metal conductive layer which is formed on the side wall of the groove and used for conducting connection between the second metal connection area and the third metal connection area;
the light-emitting chip unit is arranged on the front surface of the first insulating plate, and the electrode of the light-emitting chip unit is electrically connected with the corresponding metal electrode welding area.
2. The light-emitting diode according to claim 1, further comprising an encapsulation layer formed on the front surface of the first insulating plate to cover the light-emitting chip unit, the encapsulation layer including a wavelength conversion layer to cover the light-emitting chip unit, and a white-wall adhesive layer surrounding the wavelength conversion layer.
3. The led of claim 2, wherein the led comprises at least two light emitting chip units, and the white wall glue layer is formed between adjacent light emitting chip units.
4. The light emitting diode of claim 2, wherein the encapsulation layer further comprises a transparent glue layer disposed over the wavelength conversion layer.
5. The led of any of claims 1-4, wherein the grooves are arcuate or square in cross-section.
6. The light-emitting diode according to any one of claims 1 to 4, wherein the metal conductive member and the groove do not overlap after the first insulating plate and the second insulating plate are stacked.
7. The light emitting diode of any one of claims 1-4, wherein the substrate further comprises a conductive paste layer formed between the first metal connection region and the second metal connection region.
8. The light emitting diode of any one of claims 1-4, wherein the light emitting diode comprises at least two light emitting die units, at least one electrode of the at least two light emitting die units sharing one of the metal electrode bonding regions, or at least two of the metal electrode bonding regions sharing one of the first metal connection regions.
9. The light-emitting diode according to any one of claims 1 to 4, wherein the metal electrode land includes a copper plating layer, a nickel plating layer, and a gold plating layer disposed in this order from bottom to top on the front surface of the first insulating plate.
10. A backlight module comprising a display back plate and a plurality of light emitting diodes according to any one of claims 1-9, the plurality of light emitting diodes being arranged on the display back plate.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011040061.2A CN112331638B (en) | 2020-09-28 | 2020-09-28 | Light emitting diode and backlight module |
| EP21868759.8A EP4216275A1 (en) | 2020-09-21 | 2021-09-18 | Substrate, and led light source assembly and manufacturing method therefor |
| PCT/CN2021/119458 WO2022057937A1 (en) | 2020-09-21 | 2021-09-18 | Substrate, and led light source assembly and manufacturing method therefor |
| US18/027,223 US20230411574A1 (en) | 2020-09-21 | 2021-09-18 | Substrate, led light source assembly and manufacturing methods therefor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011040061.2A CN112331638B (en) | 2020-09-28 | 2020-09-28 | Light emitting diode and backlight module |
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| CN112331638A CN112331638A (en) | 2021-02-05 |
| CN112331638B true CN112331638B (en) | 2023-06-06 |
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| US20230411574A1 (en) * | 2020-09-21 | 2023-12-21 | Shenzhen Jufei Optoelectronics Co., Ltd. | Substrate, led light source assembly and manufacturing methods therefor |
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