CN112204722A - 用于高rf功率工艺的半导体处理装置 - Google Patents
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Abstract
在一些实施例中,半导体处理装置包含:导电支撑件,包含网;导电轴,包含导电杆;以及多个连接组件。多个连接组件并列地耦接到网并且在单个接面处连接到杆。多个连接组件有助于散布RF电流,从而减少基板中的局部加热,导致更均匀的膜沉积。此外,使用合并且耦接到单个RF杆的连接元件允许杆由可以在较低温度传导RF电流的材料制成。
Description
背景技术
技术领域
本文所描述的实施例总体上涉及利用高频功率设备的半导体处理装置,并且更特定地,涉及利用射频(RF)功率生成和/或递送装备的半导体处理装置。
相关技术说明
半导体处理装置通常包括工艺腔室,所述工艺腔室适于在工艺腔室的处理区域支撑的晶片或基板上执行各种沉积、蚀刻、或热处理步骤。随着在晶片上形成的半导体设备的尺寸减小,在沉积、蚀刻、和/或热处理步骤期间对热均匀性的需要大幅度增加。在处理期间晶片温度的少量变化可以影响在晶片上执行的这些通常与温度相关的工艺的晶片内(WIW)均匀性。
通常,半导体处理装置包括温度受控的晶片支撑件,所述晶片支撑件设置在晶片处理腔室的处理区域中。晶片支撑件将包括温度受控支撑板以及耦接到支撑板的轴。在工艺腔室中的处理期间将晶片放置在支撑板上。轴通常安装在支撑板的中心处。在支撑板内侧,存在由诸如钼(Mo)之类的材料制成的导电网,所述导电网将RF能量分配到处理腔室的处理区域。通常将导电网铜焊到含金属的连接元件,所述连接元件通常连接到RF匹配和RF发生器或接地。
随着提供到导电网的RF功率变高,通过连接元件的RF电流也将变高。将含金属的连接元件耦接到导电网的每个铜焊接合具有有限电阻,这将由于RF电流而产生热量。因此,由于焦耳加热,在导电网被铜焊到含金属的连接元件的点处存在急剧的温度增加。在导电网与连接元件之间形成的接头处产生的热量将在接头附近的支撑板中产生较高温度区域,这将导致跨支撑板的支撑表面的不均匀温度。
另外,由于将RF连接元件直接铜焊到导电网的难度,RF连接元件的材料选择受限。通常,连接元件由镍(Ni)制成,这是因为Ni可以被铜焊到用于形成导电网的钼(Mo)。然而,Ni在低温下不利于传导RF电流。在低于Ni的居里点温度(Curie point temperature)时,Ni是铁磁的并且因此是不良RF导体,从而降低RF功率递送效率。
因此,在本领域中需要通过改进将RF功率递送到工艺腔室中的基板支撑件内设置的导电电极的工艺来减少在工艺腔室内的支撑板上的温度变化。另外,需要改进将RF功率递送到导电电极的效率的方法。
发明内容
本文所描述的一个或多个实施例提供了一种半导体处理装置,所述半导体处理装置具有耦接到连接元件的RF网,所述连接元件连接到单个RF杆。
在一个实施例中,一种半导体处理装置包括:导热基板支撑件,包含网;导热轴,包含导电杆;以及连接组件,所述连接组件被配置为将导电杆电耦接到网,其中连接组件包含多个连接元件,连接元件各自包括第一端和第二端,其中多个连接元件的每一者的第一端耦接到导电网的不同部分;以及导电板,其中导电板耦接到多个连接元件的第二端和导电杆的第一端中的每一者。
在另一实施例中,一种半导体处理装置包括:导热基板支撑件,包含网;导热轴,包含导电杆;以及连接组件,所述连接组件被配置为将导电杆电耦接到网,其中连接组件包含多个连接元件,连接元件各自包括第一端和第二端,其中多个连接元件的每一者的第一端耦接到导电网的不同部分;以及导电板,其中导电板耦接到多个连接元件的第二端和导电杆的第一端中的每一者。导电杆包含具有第一长度的第一材料和具有第二长度的第二材料,其中第二材料设置在第一材料与导电板之间并且耦接到第一材料和导电板。
在又另一实施例中,一种处理腔室包括:腔室主体;RF发生器;以及导热基板支撑件,包含网;导热轴,包含导电杆;以及连接组件,所述连接组件被配置为将导电杆电耦接到网,其中连接组件包含多个连接元件,连接元件各自包括第一端和第二端,其中多个连接元件的每一者的第一端耦接到导电网的不同部分;以及导电板,其中导电板耦接到多个连接元件的第二端和导电杆的第一端中的每一者。导电杆包含具有第一长度的第一材料和具有第二长度的第二材料,其中第二材料设置在第一材料与导电板之间并且耦接到第一材料和导电板,其中第二材料在室温下是铁磁的,并且其中导热基板支撑件具有大于360℃的第一操作温度范围,并且当导热基板支撑件被维持在其第一操作温度范围内的温度时,在导电杆中的所有第二材料的温度大于第二材料的居里温度。
附图说明
为了以能够详细理解本公开的上述特征所用方式,可通过参考实施例来对上文简要概述的本公开进行更具体的描述,这些实施例中的一些在附图中被示出。然而,将注意,附图仅示出本公开的典型实施例,并且由此不被认为限制其范围,因为本公开可允许其他等同有效的实施例。
图1是根据本公开的实施例的处理腔室的横截面侧视图;
图2A是图1的半导体处理装置的横截面侧视图;
图2B是在现有技术中沿着基板表面量测的温度分布的示意图;
图2C是根据本公开的实施例的沿着基板表面量测的温度分布的示意图;
图2D是如图1所示的半导体处理装置的透视图;
图3A是如图1所示的半导体处理装置的横截面侧视图;以及
图3B是根据本公开的实施例的沿着导电杆表面量测的温度分布的示意图。
为了便于理解,在可能的情况下已使用相同附图标记来指示附图中共有的相同元件。可以预期,一个实施例的元件和特征可有利地并入其他实施例中,而无需进一步叙述。
具体实施方式
在以下描述中,阐述了数个具体细节以提供对本公开的实施例的更透彻理解。然而,对于本领域技术人员将显而易见的是,可在没有这些具体细节中的一者或多者的情况下实践本公开的一个或多个实施例。在其他实例中,没有描述熟知特征以便避免模糊本公开的一个或多个实施例。
本文所描述的实施例通常涉及适于在设置在半导体处理腔室的处理区域中的晶片上执行高射频(RF)功率工艺的半导体处理装置。半导体处理装置包括设置在基板支撑元件中的RF供电网,所述基板支撑元件耦接到适于将RF能量递送到RF供电网的连接组件。在一些实施例中,连接组件(即,图1中的连接组件134)包括多个连接元件,所述多个连接元件在一端处连接到RF供电网并且在另一端处连接到单个RF杆。多个连接元件可以用于共享和分配通过使期望量的RF电流流动到RF供电网而产生的负载。多个连接元件配置将因此有助于散布通过RF功率到RF供电网的递送而产生的热量,并且有助于减少在连接元件连接到RF供电网的点处的局部加热。这导致晶片的更均匀的膜沉积、蚀刻、或热处理。
此外,连接组件允许RF杆连接到多个连接元件,而非直接连接到网。因此,RF杆的材料选择可以包括更广范围的材料,所述材料可以更有效地将所递送的RF电流传导至RF供电网。随着传导RF电流的能力改善,RF效率也改善,这将导致减少的焦耳加热,从而允许在处理期间使用较小的RF功率递送部件和设备,并且改善工艺控制和效率。
图1是根据本公开的实施例的处理腔室的横截面侧视图。作为示例,根据等离子体增强化学气相沉积(PECVD)系统来描述图1中的处理腔室100的实施例,但可使用任何其他类型的晶片处理腔室,包括其他等离子体沉积、等离子体蚀刻、或类似的等离子体处理腔室,而不脱离本文提供的公开内容的基本范围。处理腔室100可包括壁102、底部104、和腔室盖106,它们一起封闭半导体处理装置108和处理区域110。半导体处理装置108通常为基板支撑元件,所述基板支撑元件可包括用于晶片处理的基座加热器。基座加热器可由诸如陶瓷材料(例如,AlN、BN、或Al2O3材料)之类的介电材料形成。壁102和底部104可包含导电和导热材料,诸如铝或不锈钢。
处理腔室100可进一步包括气源112和射频(RF)发生器142,所述气源和RF发生器可耦接到半导体处理装置108。气源112可经由穿过腔室盖106的气体管(gas tube)114耦接到处理腔室100。气体管114可耦接到背板116以允许处理气体通过背板116并且进入在背板116与气体分配喷头122之间形成的气室118。气体分配喷头122可由悬浮件120保持在邻近背板116的位置,使得气体分配喷头122、背板116、和悬浮件120一起形成有时被称为喷头组件的组件。在操作期间,从气源112引入处理腔室100的处理气体可以填充气室118,并且通过气体分配喷头122以均匀地进入处理区域110。在替代实施例中,除了气体分配喷头122之外或代替气体分配喷头122,可经由附接到一个或多个壁102的入口和/或喷嘴(未示出)将工艺气体处理区域110中。
半导体处理装置108可包含导热基板支撑件130,所述基板支撑件包括嵌入基板支撑件130内侧的RF供电网,下文称为网132。基板支撑件130还包括在导电轴126的至少一部分内设置的导电杆128,所述导电轴126耦接到基板支撑件130。在处理期间,基板124(或晶片)可定位在导热支撑件130的顶部上。在一些实施例中,RF发生器142可经由一个或多个传输线144(示出了一个)耦接到导电杆128。在至少一个实施例中,RF发生器142可在约200kHz到约81MHz之间(诸如在约13.56MHz到约40MHz之间)的频率下向网132提供RF电流。由RF发生器142产生的功率用于将处理区域110中的气体激励(或“激发”)为等离子体状态,例如,从而在等离子体沉积工艺期间在基板124的表面上形成层。
导电杆128经由连接组件134连接到网132。连接组件134可包括多个连接元件136(例如,在图1和图2A中示出了三个)、连接接面138、和导电板140。连接元件136的第一端可各自在连接接面138处并列地物理地耦接到网132并电耦接到网132。连接元件136中的每一者的第一端可以被铜焊到网132。连接元件136的第二端可各自耦接到导电板140的第一侧150。连接元件136可以被铜焊到导电板140,但也可以通过其他接合方法焊接或耦接至所述导电板140。导电杆128可在单个连接接面154处连接到导电板140的第二侧152。同样,导电杆128可以被铜焊到导电板140,但也可以通过其他接合方法耦接。如参考图2A至图2C更详细描述的,连接组件134提供将通过导电杆128提供的RF电流分流到连接元件136中的每一者的优点。此配置用于散布RF电流并且因此减少在连接接面138中的每一者处的焦耳加热(例如,I2R加热),从而导致基板支撑件130的表面温度更均匀,这将例如转换成在基板124上形成的更均匀沉积的膜层。在一个实施例中,连接元件136由镍(Ni)、含Ni合金、或其他类似材料制成。导电板140可由任何导电材料、RF递送材料、和工艺兼容的材料(诸如镍(Ni)、钼(Mo)、或钨(W))制造。导电板140可为圆形、矩形、三角形、或任何其他适当形状,所述形状被尺寸设计成支撑连接元件136和导电杆128。导电板140应当具有适当厚度(例如,0.5mm至5mm)以将从导电杆128提供的RF功率发送到连接元件136中的每一者。
网132、可选的偏置电极146、和加热元件148嵌入在基板支撑件130内。可选地形成在基板支撑件130内的偏置电极146可以用于通过单独的RF连接(未示出)将RF“偏压(bias)”单独地提供到基板124和处理区域110。加热元件148可包括一个或多个电阻加热元件,所述电阻加热元件被配置为在处理期间通过穿过基板124递送AC功率来向基板124提供热量。偏置电极146和加热元件148可以由导电材料制成,诸如Mo、W、或其他类似材料。
网132还可以用作静电夹紧电极,所述静电夹紧电极有助于在处理期间向基板124提供抵靠基板支撑件130的支撑表面130A的适当保持力。如上所述,网132可以由耐火金属(诸如钼(Mo)、钨(W)、或其他类似材料)制成。在一些实施例中,在距支撑表面130A(其上放置基板124)距离DT(参见图1)处嵌入网132。DT可以非常小,诸如小于1mm。因此,在网132上的温度变化将显著影响设置在支撑表面130A上的基板124的温度变化。从网132传递到支撑表面130A的热量由图1中的H箭头表示。
因此,通过划分、分配和散布由每个连接元件136提供到网132的RF电流量,并且因此使在连接元件136处产生至连接接面138的增加的温度增加最小化,将导致相对于常规连接技术的在网132上的更均匀的温度,这在下文结合图2B进一步论述。由于使用本文所描述的连接组件134,在网132上的更均匀的温度将在支撑表面130A和基板124上产生更均匀的温度。
图2A是图1的半导体处理装置108的横截面侧视图。如图所示,导电杆128具有由DR表示的直径,并且连接元件136中的每一者具有由DC表示的直径。在一些实施例中,连接元件136中的每一者具有比导电杆128更小的直径。本领域技术人员将理解,RF能量主要通过导电元件的表面区域传导,并且因此通常RF导体的大部分电流携载面积将主要由RF导电元件的周边的长度主导。RF导体的大部分电流携载面积还随着所递送的RF功率的频率增加而减小,由于集肤深度(skin depth)减少,在通过RF导体递送RF功率时,所递送的RF功率能够穿透到RF导体中。在一个示例中,对于具有圆形横截面形状的杆,在杆的集肤深度与表面之间的RF电流携载面积(Aca)将等于横截面积(Ao)减去超出杆的集肤深度之外的电流携载面积(Ana),其中Ao等于π·Do 2/4,并且Ana等于π·Dna 2/4,其中Do是杆的外径,并且Dna是在杆的集肤深度之下的面积的直径(即,Dna=Do–2·δ,其中δ是集肤深度)。可以通过等式δ=(ρ/(πfμrμo))0.5来估算集肤深度,其中ρ是以Ω·m为单位的介质的电阻率,f是以赫兹(Hz)为单位的驱动频率,μr是材料的相对电容率,并且μo是自由空间的电容率。集肤深度是指电流密度在介质表面处达到电流密度值的大约1/e(约37%)的点。因此,在介质中的大部分电流在介质表面与介质的集肤深度之间流动。在一个示例中,在13.56MHz处的纯镍材料的集肤深度将为大约1.46微米(μm)并且在40MHz的频率下为0.85μm。因此,在杆具有8mm的外径Do并且由在13.56MHz下驱动的RF源供电的一个示例中,在杆的集肤深度之上的杆的电流携载面积Aca将仅是约3.8x 10-2mm2。
然而,本公开中描述的实施例通常将包括基板支撑件130配置,在所述配置中,在所有结合的连接元件136的表面与集肤深度之间的电流携载面积的总和大于在导电杆128的表面与集肤深度之间的电流携载面积。这提供了产生较大面积以通过在连接元件136与网132之间的界面传导大部分RF能量的优点,由于焦耳加热,这将相对于图2B所示的常规单杆连接配置减少在连接接面138处产生的热量以及还在连接元件136内产生的热量。例如,当导电杆128的DR是6mm(根据上文说明的等式,DR=DO)时,使用大约1.46μm的集肤深度,Dna是大约5.997mm(即,Dna=6mm–2(.00146mm))。这导致针对导电杆128的大约2.8x 10-2mm2的Aca(即,Aca=π(6mm)2/4)–(π(5.997mm)2/4),这在下文被称为Aca1。相对地,当每个连接元件136的DC是3mm(即,DC=DO)时,使用大约1.46μm的集肤深度值,Dna是大约2.997mm(即,Dna=3mm-2(.00146mm))。这导致针对每个连接元件136的大约1.4x 10-2mm2的Aca(即,Aca=π(3mm)2/4)–(π(2.997mm)2/4),这在下文被称为Aca2。因此,针对包括三个连接元件136的连接组件,连接元件136的总RF导电面积与导电杆128的RF导电面积的比率(即,3x Aca2/Aca1)将是约1.5。由此,因为在表面与连接元件136的每一者的集肤深度之间的电流携载面积的总和大于导电杆128,所以与图2B所示的单杆连接配置处相比,在连接接面138中的每一者处存在更少的焦耳加热。
由于较小直径的连接元件具有较小横截面积,并且因此在连接接面138中的每一者处具有较小接触面积,本文所公开的连接元件配置还提供了优于常规设计的优点。由于通过连接元件递送RF功率,连接元件136的较小的横截面积将降低连接元件136中的每一者热传导在连接元件136中产生的任何热量的能力。降低的导热能力还将在基板支撑件130内更均匀地散布热量,从而有助于产生在支撑表面130A和基板124上的更均匀的温度分配。根据上文的先前示例,其中导电杆128的DR等于6mm,并且网132的DC等于3mm,对于三个导电元件136的导电组件配置,三个连接元件136与导电杆128的导热面积的比率将是约0.75。
为了示出使用本文公开的导电组件配置的效果,提供图2B作为在现有技术中在基板支撑表面206A和常规基板支撑件206的基板202上形成的温度分布的示意图,并且提供图2C作为根据本公开的一个或多个实施例的在支撑表面130A和基板124上形成的温度分布的示意图。如图2B所示,通过现有技术导电杆208传递RF电流。此RF电流由值I1表示。现有技术导电杆208设置在现有技术导电轴210内并且在单个现有技术接面212处直接连接到现有技术网204。因此,电流从现有技术导电杆208完整地流动到单个现有技术接面212。导电杆具有有限电阻抗,这将由于通过现有技术导电杆208递送RF电流而产生热量。因此,由于能够传导RF功率的表面积减少,提供到现有技术连接接面212的热量急剧增加。由于如由H箭头所示热量通过现有技术导电基板支撑件206向上流动到基板202,如由图200所示,在现有技术接面212之上的基板202的位置处的温度在中心区中尖峰,从而导致不均匀的膜层。
相反地,如图2C所示,本公开提供了将所产生的电流I1通过导电杆128散布到连接元件136中的每一者中的优点。通过连接元件136中的每一者的电流由I2表示。在一些实施例中,通过连接元件136中的每一者的电流I2可以是相等的。因此,在至少一个实施例中,连接元件136可以包含三个元件(在本文示出)。然而,连接元件136可以包含任何数量的多个元件,包括四个或更多个。通过连接元件136的电流I2可以至少小于通过导电杆128的电流I1三倍。因此,电流I2以较低大小并在网132上的多个分布开的点处流入连接接面138,从而有助于散布在基板124上产生的热量,在任何一点处产生更少的热量增加,如由图214所示。这用于改进膜层中的均匀性。连接接面138在基板支撑件130的网132上的散布在图2D中最佳地示出,图2D提供了半导体处理装置108的一个实施例的透视图。如图所示,连接接面138中的每一者可以相对远离彼此散布,从而在支撑表面130A上广泛地分配电流和所产生的热量,导致在基板124上的均匀热散布。
图3A是如图1所示的连接组件134的剖视图,并且图3B是根据本公开的实施例沿着导电杆128的温度的示意图。导电杆128可以包含两个或更多个串行连接的材料,并且因此形成复合导电杆结构。在一个实施例中,导电杆128包括具有第一长度302的第一材料300和具有第二长度306的第二材料304。第一材料300可以定位在基板支撑件130内,使得在正常处理期间,沿着第一长度经历的温度是低于第一材料300的居里温度的温度,并且在正常处理期间,沿着第二材料的第二长度306经历的温度是高于第二材料的居里温度的温度。如图3A所示,第二材料304设置在连接组件134与第一材料300之间。在图3A中,在由TC表示的点处,导电杆128的温度匹配第二材料304的居里温度。图3B中的图308示出了在导电杆128的整个长度上温度如何改变。一些材料在高于材料的居里点温度时失去其磁性,并且因此将材料从铁磁改变为顺磁。
如由图308所示,在基板支撑件130的正常操作期间,温度通常在靠近加热元件148处最高,而温度通常随着其远离加热元件148延伸而降低。例如,在第一点310处,所述第一点310对应于加热元件148附近的连接元件136中的温度,所述温度是高的,诸如例如,350-900℃的温度。进一步远离加热元件148,在第二点312处,温度下降到远小于第一点310处的值的值。第二点312处的温度将取决于第二点312距加热元件148的距离、导电杆材料的导热性、以及围绕导电杆128上的第二点的热环境。更进一步远离加热元件148,在第三点314处,也对应于导电杆128中的温度,所述温度更进一步下降。
在一些实施例中,第二材料304达到高于第二材料304的居里点(TC)的温度,并且因此高于居里点的第二材料304的所有区域从铁磁改变为顺磁。铁磁材料是不良RF导体,并且因此降低RF效率。因此,在一些实施例中,处于应低于第二材料304的居里点的温度的导电杆128的部分,优选地替换或使用非铁磁或具有甚至更低的居里点的第一材料300,并且因此所述部分在较低的温度是比第二材料304更好的RF导体。在一个实施例中,第二材料304是在高于材料的居里温度时为顺磁的材料,诸如Ni(例如,居里温度=627°K(354℃))。第一材料300可以是非铁磁材料,诸如Ti。在一些实施例中,期望设计基板支撑件130的导电杆128,使得当基板支撑件130在基板支撑件130的正常操作范围中操作时,在复合导电杆128内沿着第二材料304的所有点并且包括在第一材料300与第二材料304之间的接面的温度高于第二材料304的居里点。在一个示例中,基板支撑件130的正常操作范围是在350-900℃之间,并且因此在导电杆128上的温度是在基板支撑件的温度设定点到室温(例如,25℃)之间。在一个示例中,基板支撑件130的正常操作范围是大于350℃,诸如大于360℃、或大于400℃、或大于450℃、或甚至大于500℃。可使用具有类似性质的其他类似材料,并且此类实施例不应当被解释为限制性的。在沿着导电杆128的这些长度处使用此类材料提高了RF效率并且减少功率损失,从而提供改进沉积和产量的优点。
尽管上述内容涉及本公开的实施例,但是在不脱离本公开的基本范围的情况下,可以设计本公开的其他和进一步实施例,并且本公开的范围由所附权利要求确定。
Claims (15)
1.一种半导体处理装置,包含:
导热基板支撑件,所述导热基板支撑件包含网;
导热轴,所述导热轴包含导电杆;以及
连接组件,所述连接组件被配置为将所述导电杆电耦接到所述网,其中所述连接组件包含:
多个连接元件,所述多个连接元件各自包括第一端和第二端,其中所述多个连接元件中的每一者的所述第一端耦接到所述导电网的不同部分;以及
导电板,其中所述导电板耦接到所述多个连接元件的所述第二端和所述导电杆的第一端中的每一者。
2.如权利要求1所述的半导体处理装置,其中所述多个连接元件中的每一者的导电面积的总和至少大于所述导电杆的导电面积,其中在所述多个连接元件中的每一者中和在所述导电杆中的所述导电面积是基于从电源的RF频率电流的递送来确定的。
3.如权利要求1所述的半导体处理装置,进一步包含耦接到所述导电杆的第二端的RF发生器。
4.如权利要求3所述的半导体处理装置,其中由所述RF发生器产生的电流通过所述多个连接元件中的每一者均等地散布。
5.如权利要求4所述的半导体处理装置,其中通过所述多个连接元件中的每一者的所述电流至少小于由所述RF发生器产生的所述电流的三倍。
6.一种半导体处理装置,包含:
导热基板支撑件,所述导热基板支撑件包含网;
导热轴,所述导热轴包含导电杆;以及
连接组件,所述连接组件被配置为将所述导电杆电耦接到所述网,其中所述连接组件包含:
多个连接元件,所述多个连接元件各自包括第一端和第二端,其中所述多个连接元件中的每一者的所述第一端耦接到所述导电网的不同部分;以及
导电板,其中所述导电板耦接到所述多个连接元件的所述第二端和所述导电杆的第一端中的每一者。
其中所述导电杆包含具有第一长度的第一材料和具有第二长度的第二材料,其中所述第二材料设置在所述第一材料与所述导电板之间并且耦接到所述第一材料和所述导电板。
7.如权利要求6所述的半导体处理装置,其中所述第二材料在室温下是铁磁的。
8.如权利要求6所述的半导体处理装置,其中所述第一材料是Ti,并且所述第二材料是Ni。
9.如权利要求6所述的半导体处理装置,其中所述导热基板支撑件具有大于360℃的第一操作温度范围,并且当所述导热基板支撑件维持在所述导热基板支撑件的第一操作温度范围内的温度时,在所述导电杆中的所有所述第二材料的温度大于所述第二材料的居里温度。
10.如权利要求6所述的半导体处理装置,其中所述多个连接元件中的每一者的导电面积的总和至少大于所述导电杆的导电面积,其中在所述多个连接元件中的每一者中和在所述导电杆中的所述导电面积是基于从电源的RF频率电流的递送来确定的。
11.如权利要求6所述的半导体处理装置,进一步包含耦接到所述半导体处理装置的RF发生器,其中由所述RF发生器产生的电流通过所述多个连接元件中的每一者均等地散布。
12.一种处理腔室,包含:
腔室主体;
RF发生器;以及
导热基板支撑件,所述导热基板支撑件包含网;
导热轴,所述导热轴包含导电杆;以及
连接组件,所述连接组件被配置为将所述导电杆电耦接到所述网,其中所述连接组件包含:
多个连接元件,所述多个连接元件各自包括第一端和第二端,其中所述多个连接元件中的每一者的所述第一端耦接到所述导电网的不同部分;以及
导电板,其中所述导电板耦接到所述多个连接元件的所述第二端和所述导电杆的第一端中的每一者。
其中所述导电杆包含具有第一长度的第一材料和具有第二长度的第二材料,其中所述第二材料设置在所述第一材料与所述导电板之间并且耦接到所述第一材料和所述导电板,
其中所述第二材料在室温下是铁磁的,并且
其中所述导热基板支撑件具有大于360℃的第一操作温度范围,并且当所述导热基板支撑件维持在所述导热基板支撑件的第一操作温度范围内的温度时,在所述导电杆中所有所述第二材料的温度大于所述第二材料的居里温度。
13.如权利要求12所述的半导体处理装置,其中所述多个连接元件中的每一者的导电面积的总和至少大于所述导电杆的导电面积,其中在所述多个连接元件中的每一者中和在所述导电杆中的所述导电面积是基于从电源的RF频率电流的递送来确定的。
14.如权利要求12所述的半导体处理装置,其中由所述RF发生器产生的电流通过所述多个连接元件中的每一者均等地散布。
15.如权利要求14所述的半导体处理装置,其中通过所述多个连接元件中的每一者的所述电流至少小于由所述RF发生器产生的所述电流的三倍。
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