CN112159227A - 一种铌酸钾钠基无铅压电陶瓷及其制作工艺 - Google Patents
一种铌酸钾钠基无铅压电陶瓷及其制作工艺 Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 95
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000000126 substance Substances 0.000 claims abstract description 11
- 239000010936 titanium Substances 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 9
- 239000011734 sodium Substances 0.000 claims abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 38
- 229910052709 silver Inorganic materials 0.000 claims description 38
- 239000004332 silver Substances 0.000 claims description 38
- 239000002994 raw material Substances 0.000 claims description 33
- 238000005245 sintering Methods 0.000 claims description 22
- 239000000843 powder Substances 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 13
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims description 12
- 238000007873 sieving Methods 0.000 claims description 10
- 238000005303 weighing Methods 0.000 claims description 10
- 238000001238 wet grinding Methods 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 8
- 230000010287 polarization Effects 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 7
- 230000032683 aging Effects 0.000 claims description 6
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 6
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 6
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 claims description 6
- 239000001095 magnesium carbonate Substances 0.000 claims description 6
- 229910000021 magnesium carbonate Inorganic materials 0.000 claims description 6
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 6
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 6
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 6
- 229910000027 potassium carbonate Inorganic materials 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 6
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 6
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 6
- 239000004408 titanium dioxide Substances 0.000 claims description 6
- 230000002431 foraging effect Effects 0.000 claims description 5
- 239000010955 niobium Substances 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 238000002372 labelling Methods 0.000 claims description 3
- 229920002545 silicone oil Polymers 0.000 claims description 3
- 239000002131 composite material Substances 0.000 abstract description 9
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052797 bismuth Inorganic materials 0.000 abstract description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract description 4
- 238000013329 compounding Methods 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 4
- 229910052749 magnesium Inorganic materials 0.000 abstract description 4
- 239000011777 magnesium Substances 0.000 abstract description 4
- 229910052715 tantalum Inorganic materials 0.000 abstract description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052719 titanium Inorganic materials 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 6
- 239000003921 oil Substances 0.000 description 4
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
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- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
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Abstract
本发明公开了一种铌酸钾钠基无铅压电陶瓷及其制作工艺,所述铌酸钾钠基无铅压电陶瓷的化学组成为:(1‑x)(K0.5Na0.5)Nb1‑yTayO3+xBiMg0.5Ti0.5O3;所述x,y为摩尔百分比,0≤x≤0.3,0.01≤y≤0.1。本发明的铌酸钾钠基无铅压电陶瓷及其制作工艺,采用钽、铋、镁和钛元素掺杂取代铌酸钾钠钙钛矿结构的A、B位。通过掺杂和复合方法实现电荷平衡及空位补偿,减少原子级缺陷,提高其机械品质因数和降低介电损耗,使之能够满足大功率换能器的性能要求。
Description
技术领域
本发明涉及无铅压电陶瓷技术领域,具体涉及一种铌酸钾钠基无铅压电陶瓷及其制作工艺。
背景技术
目前商业大量使用以锆钛酸铅(PZT)陶瓷为主的含铅压电材料,其性能优异、成本低廉,但在生产时氧化铅的使用量占原料总重的70%以上,导致这些铅在生产、使用、回收以及废弃处理过程中对给人类健康和生态环境造成十分严重的伤害。也正因此,绿色环保和环境友好的无铅压电陶瓷如铌酸钾钠等逐成为压电技术新热点。单一铌酸钾钠陶瓷的压电性能不如PZT陶瓷,需要通过调控成分和掺杂元素等方法进一步调高其性能,以满足相应产品的使用要求。
基于上述情况,本发明提出了一种铌酸钾钠基无铅压电陶瓷及其制作工艺,可有效解决以上问题。
发明内容
本发明的目的在于提供一种高机械品质因数和低介电损耗的铌酸钾钠基无铅压电陶瓷及其制作工艺。本发明的铌酸钾钠基无铅压电陶瓷及其制作工艺,采用钽、铋、镁和钛元素掺杂取代铌酸钾钠钙钛矿结构的A、B位。通过掺杂和复合方法实现电荷平衡及空位补偿,减少原子级缺陷,提高其机械品质因数和降低介电损耗,使之能够满足大功率换能器的性能要求。
为解决以上技术问题,本发明提供的技术方案是:
一种铌酸钾钠基无铅压电陶瓷,所述铌酸钾钠基无铅压电陶瓷的化学组成为:(1-x)(K0.5Na0.5)Nb1-yTayO3+xBiMg0.5Ti0.5O3;所述x,y为摩尔百分比,0≤x≤0.3,0.01≤y≤0.1。
本发明的铌酸钾钠基无铅压电陶瓷及其制作工艺,采用钽、铋、镁和钛元素掺杂取代铌酸钾钠钙钛矿结构的A、B位。通过掺杂和复合方法实现电荷平衡及空位补偿,减少原子级缺陷,提高其机械品质因数和降低介电损耗,使之能够满足大功率换能器的性能要求。
优选的,所述的铌酸钾钠基无铅压电陶瓷的制作工艺包括以下步骤:
1)原料预处理:将碳酸钾、碳酸钠、五氧化二铌、五氧化二钽、氧化铋、碳酸镁和二氧化钛放入培养皿,置于烘箱内,在100-120℃下保温5-8h;
2)称料混合:按所述铌酸钾钠基无铅压电陶瓷的化学组成配比称量经步骤1)预处理后的原料,分散于无水乙醇中,混合均匀后烘干,粉碎过筛,制成预混粉;
3)预烧:将所述预混粉置于箱式炉中连续升温至800-950℃,保温6-10h,降至室温后粉碎过筛,得到预烧粉;
4)烧结:将所述预烧粉干压成型为生坯,在气氛烧结炉中于1050-1250℃下保温8-12h,得到致密的压电陶瓷片;
5)后处理:将烧结好的所述压电陶瓷片加工成所需形状,在两侧镀上银层,标注正负极后极化老化得到所述铌酸钾钠基无铅压电陶瓷。
优选的,步骤2)中,所述经步骤1)预处理后的原料分散于无水乙醇后,通过球磨机湿磨混合均匀,所述球磨机的转速为200-400rpm,湿磨时间为24-36h,过80目筛。
优选的,步骤4)中,所述气氛烧结炉中的烧结气为空气或氧气,气压为0.1-0.6MPa。
优选的,步骤5)中,所述在两侧镀上银层为:在压电陶瓷片的两表面用丝网涂上厚度为0.01mm的银浆,在120℃下烘干,随后在箱式炉中升温至600-700℃,保温120min后,降温至室温,得到被银陶瓷片。
优选的,步骤5)中,所述极化老化为:将标注有正负极的被银陶瓷片放入装有硅油的极化装置中,油浴加热至100-150℃,在3-5kV/mm的电压下极化30min,然后在室温下放置24h老化,得到所述铌酸钾钠基无铅压电陶瓷。
本发明与现有技术相比,具有以下优点及有益效果:
本发明的铌酸钾钠基无铅压电陶瓷通过精选原料组成,并优化各原料含量,且采用直接干压成型、烧结的方式(严格控制各步骤的工艺条件参数(工艺条件参数的控制是获得性能良好的铌酸钾钠基无铅压电陶瓷的关键,只有工艺条件参数控制在合适的范围内,才能保证铌酸钾钠基无铅压电陶瓷的质量),制备成的铌酸钾钠基无铅压电陶瓷压电性能好,其机械品质因数在350以上,介电损耗在0.8%以下,压电常数为280-300pC/N,可以满足大功率换能器对于压电陶瓷需求。
本发明制备得到的铌酸钾钠基无铅压电陶瓷可取代传统的含铅压电陶瓷制作大功率换能器的元件,绿色环保,可有效避免含铅压电陶瓷材料在生产、使用和废弃过程中带来的铅污染,减少对人类健康和生态环境造成的损害。
本发明的铌酸钾钠基无铅压电陶瓷选择了适当配比的碳酸钾、碳酸钠、五氧化二铌和辅料,所述辅料为五氧化二钽、氧化铋、碳酸镁和二氧化钛;
本发明在合成铌酸钾钠基无铅压电陶瓷的过程中,采用掺杂改性和复合添加的方法,并严格控制各步骤的工艺条件参数,工艺条件参数的控制是获得性能良好的铌酸钾钠基无铅压电陶瓷的关键,只有工艺条件参数控制在合适的范围内,才能保证铌酸钾钠基无铅压电陶瓷的质量,有效提高了铌酸钾钠基无铅压电陶瓷的机械品质因数,降低了其介电损耗。
具体实施方式
为了使本领域的技术人员更好地理解本发明的技术方案,下面结合具体实施例对本发明的优选实施方案进行描述,但是不能理解为对本专利的限制。
下述实施例中所述试验方法或测试方法,如无特殊说明,均为常规方法;所述试剂和材料,如无特殊说明,均从常规商业途径获得,或以常规方法制备。
实施例1:
一种铌酸钾钠基无铅压电陶瓷,所述铌酸钾钠基无铅压电陶瓷的化学组成为:(1-x)(K0.5Na0.5)Nb1-yTayO3+xBiMg0.5Ti0.5O3;所述x,y为摩尔百分比,0≤x≤0.3,0.01≤y≤0.1。
优选的,所述的铌酸钾钠基无铅压电陶瓷的制作工艺包括以下步骤:
1)原料预处理:将碳酸钾、碳酸钠、五氧化二铌、五氧化二钽、氧化铋、碳酸镁和二氧化钛放入培养皿,置于烘箱内,在100-120℃下保温5-8h;
2)称料混合:按所述铌酸钾钠基无铅压电陶瓷的化学组成配比称量经步骤1)预处理后的原料,分散于无水乙醇中,混合均匀后烘干,粉碎过筛,制成预混粉;
3)预烧:将所述预混粉置于箱式炉中连续升温至800-950℃,保温6-10h,降至室温后粉碎过筛,得到预烧粉;
4)烧结:将所述预烧粉干压成型为生坯,在气氛烧结炉中于1050-1250℃下保温8-12h,得到致密的压电陶瓷片;
5)后处理:将烧结好的所述压电陶瓷片加工成所需形状,在两侧镀上银层,标注正负极后极化老化得到所述铌酸钾钠基无铅压电陶瓷。
优选的,步骤2)中,所述经步骤1)预处理后的原料分散于无水乙醇后,通过球磨机湿磨混合均匀,所述球磨机的转速为200-400rpm,湿磨时间为24-36h,过80目筛。
优选的,步骤4)中,所述气氛烧结炉中的烧结气为空气或氧气,气压为0.1-0.6MPa。
优选的,步骤5)中,所述在两侧镀上银层为:在压电陶瓷片的两表面用丝网涂上厚度为0.01mm的银浆,在120℃下烘干,随后在箱式炉中升温至600-700℃,保温120min后,降温至室温,得到被银陶瓷片。
优选的,步骤5)中,所述极化老化为:将标注有正负极的被银陶瓷片放入装有硅油的极化装置中,油浴加热至100-150℃,在3-5kV/mm的电压下极化30min,然后在室温下放置24h老化,得到所述铌酸钾钠基无铅压电陶瓷。
实施例2:
一种(高机械品质因数和低介电损耗的)铌酸钾钠基无铅压电陶瓷,包含以下原子百分比的化学组成,90%的(K0.5Na0.5)Nb0.9Ta0.1O3和10%的BiMg0.5Ti0.5O3,制备方法包括以下步骤:
1)原料预处理:将碳酸钾、碳酸钠、五氧化二铌、五氧化二钽、氧化铋、碳酸镁和二氧化钛放入培养皿,置于烘箱内,在120℃下保温6h;
2)称料混合:按所述化学组成配比称量预处理后的原料,分散于无水乙醇中,放入球磨机湿磨,球磨机的转速为240rpm,湿磨时间为36h,湿磨结束后取出放入烘箱烘干,用玛瑙研钵磨碎,过80目筛,制成干粉;
3)预烧:将预混粉置于箱式炉中连续升温至900℃,保温8h,降温至室温后粉碎过筛,得到预烧粉;
4)烧结:将预烧粉干压成型为生坯,在0.1MPa空气气氛烧结炉中于1050℃下保温10h,得到致密的压电陶瓷片;
5)后处理:将烧结好的压电陶瓷片加工成所需形状,在两侧镀上银层,烧银温度为700℃;在被银陶瓷片两侧电极分别标注正负极,放入装有硅油的极化装置中,油浴加热至150℃,在3kV/mm的电压下极化30min,然后在室温下放置24h老化,得到所述铌酸钾钠基无铅压电陶瓷。
经测试本实施例得到的铌酸钾钠基无铅压电陶瓷的机械品质因数为380,介电损耗为0.77%,压电常数为300pC/N。
实施例3:
一种(高机械品质因数和低介电损耗的)铌酸钾钠基无铅压电陶瓷,包含以下原子百分比的化学组成,85%的(K0.5Na0.5)Nb0.95Ta0.05O3和15%的BiMg0.5Ti0.5O3,制备方法包括以下步骤:
1)原料预处理:将碳酸钾、碳酸钠、五氧化二铌、五氧化二钽、氧化铋、碳酸镁和二氧化钛放入培养皿,置于烘箱内,在110℃下保温8h;
2)称料混合:按所述化学组成配比称量预处理后的原料,分散于无水乙醇中,放入球磨机湿磨,球磨机的转速为300rpm,湿磨时间为24h,湿磨结束后取出放入烘箱烘干,用玛瑙研钵磨碎,过80目筛,制成干粉;
3)预烧:将预混粉置于箱式炉中连续升温至850℃,保温10h,降温至室温后粉碎过筛,得到预烧粉;
4)烧结:将预烧粉干压成型为生坯,在0.1MPa氧气气氛烧结炉中于1100℃下保温10h,得到致密的压电陶瓷片;
5)后处理:将烧结好的压电陶瓷片加工成所需形状,在两侧镀上银层,烧银温度为650℃;在被银陶瓷片两侧电极分别标注正负极,放入装有硅油的极化装置中,油浴加热至120℃,在4kV/mm的电压下极化30min,然后在室温下放置24h老化,得到所述铌酸钾钠基无铅压电陶瓷。
经测试本实施例得到的铌酸钾钠基无铅压电陶瓷的机械品质因数为372,介电损耗为0.69%,压电常数为295pC/N。
本发明的(高机械品质因数和低介电损耗的)铌酸钾钠基无铅压电陶瓷,采用钽、铋、镁和钛元素掺杂取代铌酸钾钠钙钛矿结构的A、B位。通过掺杂和复合方法实现电荷平衡及空位补偿,减少原子级缺陷,提高其机械品质因数并降低介电损耗,使之能够满足大功率换能器的性能要求。本发明制备得到的铌酸钾钠基无铅压电陶瓷可以取代传统的含铅压电陶瓷制作大功率换能器的元件,绿色环保,可有效避免含铅压电陶瓷材料在生产、使用和废弃过程中带来的铅污染,减少对人类健康和生态环境造成的损害。
以上仅是本发明的优选实施方式,应当指出的是,上述优选实施方式不+应视为对本发明的限制,本发明的保护范围应当以权利要求所限定的范围为准。对于本技术领域的普通技术人员来说,在不脱离本发明的精神和范围内,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (6)
1.一种铌酸钾钠基无铅压电陶瓷,其特征在于,所述铌酸钾钠基无铅压电陶瓷的化学组成为:(1-x)(K0.5Na0.5)Nb1-yTayO3+xBiMg0.5Ti0.5O3;所述x,y为摩尔百分比,0≤x≤0.3,0.01≤y≤0.1。
2.根据权利要求1所述的铌酸钾钠基无铅压电陶瓷的制作工艺,其特征在于,包括以下步骤:
1)原料预处理:将碳酸钾、碳酸钠、五氧化二铌、五氧化二钽、氧化铋、碳酸镁和二氧化钛放入培养皿,置于烘箱内,在100-120℃下保温5-8h;
2)称料混合:按所述铌酸钾钠基无铅压电陶瓷的化学组成配比称量经步骤1)预处理后的原料,分散于无水乙醇中,混合均匀后烘干,粉碎过筛,制成预混粉;
3)预烧:将所述预混粉置于箱式炉中连续升温至800-950℃,保温6-10h,降至室温后粉碎过筛,得到预烧粉;
4)烧结:将所述预烧粉干压成型为生坯,在气氛烧结炉中于1050-1250℃下保温8-12h,得到致密的压电陶瓷片;
5)后处理:将烧结好的所述压电陶瓷片加工成所需形状,在两侧镀上银层,标注正负极后极化老化得到所述铌酸钾钠基无铅压电陶瓷。
3.根据权利要求2所述的铌酸钾钠基无铅压电陶瓷的制作工艺,其特征在于,步骤2)中,所述经步骤1)预处理后的原料分散于无水乙醇后,通过球磨机湿磨混合均匀,所述球磨机的转速为200-400rpm,湿磨时间为24-36h,过80目筛。
4.根据权利要求2所述的铌酸钾钠基无铅压电陶瓷的制作工艺,其特征在于,步骤4)中,所述气氛烧结炉中的烧结气为空气或氧气,气压为0.1-0.6MPa。
5.根据权利要求2所述的铌酸钾钠基无铅压电陶瓷的制作工艺,其特征在于,步骤5)中,所述在两侧镀上银层为:在压电陶瓷片的两表面用丝网涂上厚度为0.01mm的银浆,在120℃下烘干,随后在箱式炉中升温至600-700℃,保温120min后,降温至室温,得到被银陶瓷片。
6.根据权利要求5所述的铌酸钾钠基无铅压电陶瓷的制作工艺,其特征在于,步骤5)中,所述极化老化为:将标注有正负极的被银陶瓷片放入装有硅油的极化装置中,油浴加热至100-150℃,在3-5kV/mm的电压下极化30min,然后在室温下放置24h老化,得到所述铌酸钾钠基无铅压电陶瓷。
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CN113979748A (zh) * | 2021-09-30 | 2022-01-28 | 西安交通大学 | 一种铌酸钠钾基无铅压电陶瓷及其制备方法 |
CN113979748B (zh) * | 2021-09-30 | 2022-07-12 | 西安交通大学 | 一种铌酸钠钾基无铅压电陶瓷及其制备方法 |
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