CN112103374B - 半导体发光单元及级联型中红外光发光二极管 - Google Patents
半导体发光单元及级联型中红外光发光二极管 Download PDFInfo
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Abstract
本发明公开了一种半导体发光单元及级联型中红外光发光二极管，半导体发光单元包括依序叠层的空穴势垒层、有源层和电子势垒层，空穴势垒层和电子势垒层的有效带宽分别大于有源层的有效带宽，空穴势垒层和有源层的导带相互平齐且价带形成势差，电子势垒层和有源层的价带相互平齐且导带形成势差。级联型中红外光发光二极管包括上述的半导体发光单元。本发明解决了现有半导体发光单元的有源区域缺乏异质结限制，影响其量子效率和输出功率的问题。
Description
技术领域
本发明涉及半导体技术领域，尤其涉及一种半导体发光单元及级联型中红外发光二极管。
背景技术
3-5μm中红外光源处于大气的窗口波段，在工业气体检测、光谱学、动态红外场景生成、医疗、环保、自由空间光通信和军事等诸多领域有着十分重要的应用。发光二极管凭借其快速的开关速度、高的输出功率以及相对较窄的发光光谱等优势在中红外光源中受到重视。
近年来为了提高中红外发光二极管的性能，出现了很多新型的结构。其中较受重视的为级联型发光二极管。级联型发光二极管将传统发光二极管的有源区从一个拆分成多个，使用连接层将多个有源区连接起来，多个有源区通过串联实现载流子的注入，上一个级层中的电子复合后可以从价带通过连接层进入下一个有源区的导带继续进行载流子复合。通过这种方式，提高了电子利用率。级联结构在输出总功率不变的情况下，通过提高器件两端的电压而降低了器件中的电流密度，从而降低了电子浓度，抑制了由俄歇复合导致的非辐射复合概率，提高了发光二极管的性能。
但为了实现这种结构，其有源区和连接层非常复杂，生长步骤繁琐且材料质量和均匀性难以保证。2008年有文献报道了一种新材料体系下的更简洁的级联型红外发光二极管(E.J.Koerperick et al，Journal of Quantum Electronics 44， 1242-1247，2008)，其能带结构如图1所示。此结构以InAs/GaSb超晶格作为有源区，以渐变超晶格和GaSb层所形成的隧道结作为连接层。
但是此结构仅以InAs/GaSb超晶格作为电子空穴复合有源区域，其载流子没有异质结形成的势垒限制从而易造成待复合载流子从有源区逃逸，影响其量子效率和输出功率。此结构连接层中渐变超晶格结构工艺较为复杂，生长过程的重复性和均匀性较差。因此，迫切需要研发一种更先进的量子结构，以提高器件性能。
发明内容
为了达到上述的目的，本发明采用了如下的技术方案：
本发明的一方面提供了一种半导体发光单元，包括依序叠层设置的空穴势垒层、有源层和电子势垒层，所述空穴势垒层和所述电子势垒层的有效带宽分别大于所述有源层的有效带宽，所述空穴势垒层和所述有源层的导带相互平齐且价带形成势差，所述电子势垒层和所述有源层的价带相互平齐且导带形成势差。
优选地，所述空穴势垒层为掺Si的InAsP/InAsSb超晶格。
优选地，所述有源层为非掺杂的本征InAs/GaSb超晶格。
优选地，所述电子势垒层为掺Zn或Be的InAs/GaSb超晶格。
本发明的另一方面提供了一种级联型中红外光发光二极管，包括多个叠层设置的如上所述的半导体发光单元，每个所述半导体发光单元的所述电子势垒层朝向相邻的所述半导体发光单元的空穴势垒层，其中，每相邻的两个所述半导体发光单元之间设有隧道结。
优选地，所述隧道结包括叠层的P型GaSb层和N型InAs层，所述P型 GaSb层朝向相邻的所述半导体发光单元的所述电子势垒层，所述N型InAs层朝向相邻的所述半导体发光单元的所述空穴势垒层。
优选地，所述P型GaSb层与所述电子势垒层的导带和价带均形成势差。
优选地，所述N型InAs层与所述空穴势垒层的导带和价带均形成势差。
优选地，还包括衬底，所述衬底为N型InAs衬底或P型GaSb衬底。
优选地，多个叠层的所述半导体发光单元设于所述衬底的第一表面上，所述衬底的第二表面上设有第一电极，所述衬底的第一表面和第二表面彼此相对，相对于所述衬底最远设置的所述半导体发光单元上设有与所述第一电极相对应的第二电极。
与现有技术相比，本发明的半导体发光单元使空穴势垒层和电子势垒层的有效带宽分别大于有源层的有效带宽，且使空穴势垒层和有源层的导带相互平齐且价带形成势差，使电子势垒层和有源层的价带相互平齐且导带形成势差，以此在有源层两侧分别形成了异质结，能够有效地限制载流子，从而提高了半导体发光单元的量子效率和输出功率。
进一步地，本发明的级联型中红外光发光二极管，利用InAs/GaSb超晶格作为有源区的半导体发光单元，并利用隧道结连接每相邻的两个半导体发光单元，在提高器件电压的同时降低了每个半导体发光单元的电流密度，能够有效抑制俄歇复合引起的非辐射复合，提高了器件的量子效率和输出功率。
附图说明
图1为现有技术中的级联型红外发光二极管的能带与载流子的示意图；
图2为本发明的半导体发光单元的结构示意图；
图3为本发明的级联型红外发光二极管的结构示意图；
图4为本发明的半导体发光单元的能带与载流子的示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面结合附图对本发明的具体实施方式进行详细说明。这些优选实施方式的示例在附图中进行了例示。附图中所示和根据附图描述的本发明的实施方式仅仅是示例性的，并且本发明并不限于这些实施方式。
在此，还需要说明的是，为了避免因不必要的细节而模糊了本发明，在附图中仅仅示出了与根据本发明的方案密切相关的结构和/或处理步骤，而省略了与本发明关系不大的其他细节。
实施例1
本实施例提供了一种半导体发光单元1，如图2所示，该半导体发光单元1 包括依序叠层设置的空穴势垒层11、有源层12和电子势垒层13。如图4所示，为了在所述有源层12的两侧分别设置异质结结构，本实施例中，所述半导体发光单元1的所述空穴势垒层11和所述电子势垒层13的有效带宽分别大于所述有源层12的有效带宽。
其中，所述空穴势垒层11和所述有源层12的导带相互平齐且价带形成势差，以此限制了空穴载流子的迁移率；所述电子势垒层13和所述有源层12的价带相互平齐且导带形成势差，以此限制了待复合的载流子的移动，有效地限制载流子的逃逸，使待复合的载流子局域在有源区内，从而可以得到更高的量子效率和复合效率，进而提高了半导体发光单元1的发光效率。
为了实现上述的异质结结构。本实施例中所述空穴势垒层11优选为掺Si 的InAsP/InAsSb超晶格；所述有源层12优选为非掺杂的本征InAs/GaSb超晶格；所述电子势垒层13优选为掺Zn或Be的InAs/GaSb超晶格。
本实施例中，在半导体发光单元的有源层的两侧分别形成了异质结结构，以此限制了有源区域的载流子，从而提高了半导体发光单元的量子效率和输出功率。
实施例2
本实施例提供了一种级联型中红外光发光二极管，如图3所示，该级联型中红外光发光二极管包括衬底3，所述衬底3的第一表面上设有多个叠层的如实施例1所述的半导体发光单元1，每个所述半导体发光单元1的所述电子势垒层 13朝向相邻的所述半导体发光单元1的空穴势垒层11，其中，每相邻的两个所述半导体发光单元1之间设有隧道结2。所述衬底3的第二表面上设有第一电极 4，相对于所述衬底3最远设置的所述发光单元上设有与所述第一电极4相对应的第二电极5。
其中，所述隧道结2包括叠层的P型GaSb层21和N型InAs层22。所述 P型GaSb层21朝向相邻的所述半导体发光单元1的所述电子势垒层13，所述 N型InAs层22朝向相邻的所述半导体发光单元1的所述空穴势垒层11。所述隧道结2作为电子空穴源，相当于一种金属层，可实现级联型结构的连接并且能够较好地抑制电压的损失。
进一步地，如图4所示，所述P型GaSb层21与所述电子势垒层13的导带和价带均形成势差。所述N型InAs层22与所述空穴势垒层11的导带和价带均形成势差。
与现有技术相比(如图1中的级联型中红外光发光二极管)，本实施例的级联型中红外光发光二极管的隧道结不具有渐变超晶格层，因此生长中不必逐渐调节组分的厚度，隧道结的制作工艺比较简单，生长过程的重复性和均匀性都比较良好，从而提高了产品的良率。
实施例3
本实施例公开了实施例2的级联型中红外光发光二极管的制作方法，该方法包括：
步骤S1、在衬底3的第一表面上交替叠层生长所述半导体发光单元1和所述隧道结2，设置第15个所述半导体发光单元1之后结束生长操作。具体地，所述衬底3优选为N型InAs衬底，掺杂浓度为1×1019cm-3。采用金属有机物化学气相沉积(MOCVD)作为生长工艺，生长源为TMIn、TMGa、TMSb、AsH3 和PH3，N型掺杂源为SiH4，P型掺杂源DEZn，生长温度为600℃，反应室压力为200Torr。在高温处理除去衬底3表面的杂质后，依次生长：
空穴势垒层11，包括100nm厚InAsP/InAsSb超晶格，各层掺Si，掺杂浓度为2×1017cm-3，对应带宽为0.4eV；
有源层12，包括50nm厚的非掺杂InAs/GaSb超晶格，对应带宽为0.25eV；
电子势垒层13，包括100nm厚的InAs/GaSb超晶格，各层掺Zn,掺杂浓度为2×1017cm-3，对应带宽为0.4eV；
P型GaSb层21，其厚度为5nm，掺Zn，掺杂浓度为1×1019cm-3；
N型InAs层22，其厚度为5nm，掺Si，掺杂浓度为1×1019cm-3。
步骤S2、在衬底3的第二表面上设置第一电极4，在最后生长的所述半导体发光单元1上设置第二电极5。具体地，采用电子束蒸发工艺，将Ti、Pt、Au 依序叠层组合形成金属电极。其中，所述Ti的厚度为
所述Pt的厚度为
所述Au的厚度为
本实施例中制备了含有15个发光单元的级联型中红外发光二极管，生长采用了工业化的MOCVD工艺，能够减小成本，提高性价比。InAs/GaSb超晶格有源层的带宽为0.25eV，对应的出射光波长为5μm。
实施例4
本实施例公开了另一种实施例2的级联型中红外光发光二极管的制作方法，该方法包括：
步骤S1、在衬底3的第一表面上交替叠层生长所述半导体发光单元1和所述隧道结2，设置第10个所述半导体发光单元1之后结束生长操作。具体地，所述衬底3优选为P型GaSb衬底，掺杂浓度为2×1018cm-3。采用分子束外延工艺(MBE)作为生长工艺，生长源为固态单质源In、Ga、As、Sb和P，N型掺杂源为Si，P型掺杂源为Be。生长温度为400℃。对衬底3除气去杂后，依次生长：
空穴势垒层11，200nm厚InAsP/InAsSb超晶格，各层掺Si，掺杂浓度为 6×1017cm-3，对应带宽为0.6eV；
有源层12，包括100nm厚的非掺杂InAs/GaSb超晶格，对应带宽为0.41eV；
电子势垒层13，200nm厚的InAs/GaSb超晶格，各层掺Be，掺杂浓度为 4×1016cm-3，对应带宽为0.62eV；
P型GaSb层21，其厚度为10nm，掺Zn，掺杂浓度为1×1019cm-3；
N型InAs层22，其厚度为10nm，掺Si，掺杂浓度为1×1019cm-3。
步骤S2、在衬底3的第二表面上设置第一电极4，在最后生长的所述半导体发光单元1上设置第二电极5。具体地，采用电子束蒸发工艺，将Ti、Pt、Au 依序叠层组合形成金属电极。其中，所述Ti的厚度为
所述Pt的厚度为
所述Au的厚度为
本实施例中制备了含有10个发光单元的级联型中红外发光二极管，使用较为常见的MBE工艺，由于MBE工艺能形成陡峭界面，该实施例提供的器件性能较好。InAs/GaSb超晶格有源层的带宽为0.41eV，对应出射光波长为3μm。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由所附权利要求及其等同物限定。
Claims (7)
1.一种半导体发光单元，其特征在于，包括依序叠层设置的空穴势垒层、有源层和电子势垒层，所述空穴势垒层和所述电子势垒层的有效带宽分别大于所述有源层的有效带宽，所述空穴势垒层和所述有源层的导带相互平齐且价带形成势差，所述电子势垒层和所述有源层的价带相互平齐且导带形成势差；
其中，所述空穴势垒层为掺Si的InAsP/InAsSb超晶格。
2.根据权利要求1所述的半导体发光单元，其特征在于，所述有源层为非掺杂的本征InAs/GaSb超晶格。
3.根据权利要求2所述的半导体发光单元，其特征在于，所述电子势垒层为掺Zn或Be的InAs/GaSb超晶格。
4.一种级联型中红外光发光二极管，其特征在于，包括多个叠层的如权利要求1-3任一所述的半导体发光单元，每个所述半导体发光单元的所述电子势垒层朝向相邻的所述半导体发光单元的空穴势垒层，其中，每相邻的两个所述半导体发光单元之间设有隧道结。
5.根据权利要求4所述的级联型中红外光发光二极管，其特征在于，所述隧道结包括叠层的P型GaSb层和N型InAs层，所述P型GaSb层朝向相邻的所述半导体发光单元的所述电子势垒层，所述N型InAs层朝向相邻的所述半导体发光单元的所述空穴势垒层。
6.根据权利要求4或5所述的级联型中红外光发光二极管，其特征在于，还包括衬底，所述衬底为N型InAs衬底或P型GaSb衬底。
7.根据权利要求6所述的级联型中红外光发光二极管，其特征在于，多个叠层的所述半导体发光单元设于所述衬底的第一表面上，所述衬底的第二表面上设有第一电极，所述衬底的第一表面和第二表面彼此相对，相对于所述衬底最远设置的所述半导体发光单元上设有与所述第一电极相对应的第二电极。
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