CN112088427A - 极端均匀加热基板支撑组件 - Google Patents

极端均匀加热基板支撑组件 Download PDF

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Publication number
CN112088427A
CN112088427A CN201980030055.8A CN201980030055A CN112088427A CN 112088427 A CN112088427 A CN 112088427A CN 201980030055 A CN201980030055 A CN 201980030055A CN 112088427 A CN112088427 A CN 112088427A
Authority
CN
China
Prior art keywords
support assembly
substrate support
heater
chuck body
chuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201980030055.8A
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English (en)
Chinese (zh)
Inventor
D·本杰明森
V·D·帕科
O·S·科拉西德达拉玛雅
K·H·弗劳德
J·王
M·T·萨米尔
D·卢博米尔斯基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
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Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN112088427A publication Critical patent/CN112088427A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Resistance Heating (AREA)
  • Chemical Vapour Deposition (AREA)
CN201980030055.8A 2018-05-31 2019-05-03 极端均匀加热基板支撑组件 Pending CN112088427A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862678540P 2018-05-31 2018-05-31
US62/678,540 2018-05-31
PCT/US2019/030741 WO2019231614A1 (en) 2018-05-31 2019-05-03 Extreme uniformity heated substrate support assembly

Publications (1)

Publication Number Publication Date
CN112088427A true CN112088427A (zh) 2020-12-15

Family

ID=68693589

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980030055.8A Pending CN112088427A (zh) 2018-05-31 2019-05-03 极端均匀加热基板支撑组件

Country Status (6)

Country Link
US (1) US12488967B2 (https=)
JP (3) JP7662339B2 (https=)
KR (3) KR20250100800A (https=)
CN (1) CN112088427A (https=)
TW (1) TWI702685B (https=)
WO (1) WO2019231614A1 (https=)

Cited By (2)

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CN115552591A (zh) * 2021-03-12 2022-12-30 应用材料公司 多区域半导体基板支撑
TWI899717B (zh) * 2022-12-19 2025-10-01 大陸商中微半導體設備（上海）股份有限公司 靜電吸盤、電漿處理裝置及方法

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TWI896439B (zh) * 2020-03-30 2025-09-01 美商蘭姆研究公司 基板處理系統及基板支座溫度控制方法
TWI868119B (zh) * 2020-03-30 2025-01-01 美商蘭姆研究公司 基板處理系統及基板支座溫度控制方法
US11493551B2 (en) 2020-06-22 2022-11-08 Advantest Test Solutions, Inc. Integrated test cell using active thermal interposer (ATI) with parallel socket actuation
US11549981B2 (en) 2020-10-01 2023-01-10 Advantest Test Solutions, Inc. Thermal solution for massively parallel testing
US11808812B2 (en) 2020-11-02 2023-11-07 Advantest Test Solutions, Inc. Passive carrier-based device delivery for slot-based high-volume semiconductor test system
US11821913B2 (en) 2020-11-02 2023-11-21 Advantest Test Solutions, Inc. Shielded socket and carrier for high-volume test of semiconductor devices
US12320841B2 (en) 2020-11-19 2025-06-03 Advantest Test Solutions, Inc. Wafer scale active thermal interposer for device testing
US11567119B2 (en) 2020-12-04 2023-01-31 Advantest Test Solutions, Inc. Testing system including active thermal interposer device
US11573262B2 (en) 2020-12-31 2023-02-07 Advantest Test Solutions, Inc. Multi-input multi-zone thermal control for device testing
US12317378B2 (en) * 2021-02-04 2025-05-27 Applied Materials, Inc. Multi-zone heater control for wafer processing equipment
US11881423B2 (en) * 2021-02-09 2024-01-23 Applied Materials, Inc. Electrostatic chuck with metal bond
US11410869B1 (en) * 2021-02-22 2022-08-09 Applied Materials, Inc. Electrostatic chuck with differentiated ceramics
US20220282371A1 (en) * 2021-03-03 2022-09-08 Applied Materials, Inc. Electrostatic chuck with metal shaft
US11587640B2 (en) 2021-03-08 2023-02-21 Advantest Test Solutions, Inc. Carrier based high volume system level testing of devices with pop structures
TWI768786B (zh) * 2021-03-24 2022-06-21 天虹科技股份有限公司 可準確調整溫度的承載盤及應用該承載盤的薄膜沉積裝置
US20230011261A1 (en) * 2021-07-09 2023-01-12 Applied Materials, Inc. Multi-zone heater with minimum rf loss
US12094748B2 (en) * 2021-08-18 2024-09-17 Applied Materials, Inc. Bipolar esc with balanced RF impedance
US20230060192A1 (en) * 2021-09-02 2023-03-02 Entegris, Inc. Methods and apparatus for processing an electrostatic chuck
CN116072584A (zh) * 2021-11-03 2023-05-05 中微半导体设备(上海)股份有限公司 多区控温的静电吸盘及等离子体处理装置
US11656273B1 (en) 2021-11-05 2023-05-23 Advantest Test Solutions, Inc. High current device testing apparatus and systems
US20230420274A1 (en) * 2022-06-22 2023-12-28 Tel Manufacturing And Engineering Of America, Inc. Radiatively-Cooled Substrate Holder
TWI890199B (zh) * 2022-12-02 2025-07-11 日商鎧俠股份有限公司 半導體裝置冷卻裝置
US12400896B2 (en) * 2023-05-24 2025-08-26 Applied Materials, Inc. Fabrication of substrate support devices using inorganic dielectric bonding
US20250096703A1 (en) * 2023-09-19 2025-03-20 Applied Materials, Inc. Electrostatic Chuck Having Multi Zone Gas Cooling
CN120236968A (zh) * 2023-12-28 2025-07-01 中微半导体设备(上海)股份有限公司 一种用于晶圆处理装置的加热器及其制造方法和等离子处理装置

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Publication number Priority date Publication date Assignee Title
CN115552591A (zh) * 2021-03-12 2022-12-30 应用材料公司 多区域半导体基板支撑
TWI899717B (zh) * 2022-12-19 2025-10-01 大陸商中微半導體設備（上海）股份有限公司 靜電吸盤、電漿處理裝置及方法

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Publication number Publication date
KR102471635B1 (ko) 2022-11-29
JP7662339B2 (ja) 2025-04-15
JP2022020732A (ja) 2022-02-01
KR20250100800A (ko) 2025-07-03
US20190371577A1 (en) 2019-12-05
JP7662489B2 (ja) 2025-04-15
JP2021525454A (ja) 2021-09-24
TWI702685B (zh) 2020-08-21
TW202004980A (zh) 2020-01-16
US12488967B2 (en) 2025-12-02
JP2025072361A (ja) 2025-05-09
KR20220163508A (ko) 2022-12-09
WO2019231614A1 (en) 2019-12-05
KR20200136495A (ko) 2020-12-07

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