CN112086381B - 用于原子层沉积的动态前体投配 - Google Patents

用于原子层沉积的动态前体投配 Download PDF

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Publication number
CN112086381B
CN112086381B CN202010730406.0A CN202010730406A CN112086381B CN 112086381 B CN112086381 B CN 112086381B CN 202010730406 A CN202010730406 A CN 202010730406A CN 112086381 B CN112086381 B CN 112086381B
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precursor
ampoule
process chamber
time
flow
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CN112086381A (zh
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普鲁肖塔姆·库马尔
阿德里安·拉沃伊
钱俊
康胡
伊时塔克·卡里姆
欧丰松
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
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    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
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    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
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    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
CN202010730406.0A 2015-10-02 2016-09-29 用于原子层沉积的动态前体投配 Active CN112086381B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562236780P 2015-10-02 2015-10-02
US62/236,780 2015-10-02
US14/929,073 2015-10-30
US14/929,073 US10094018B2 (en) 2014-10-16 2015-10-30 Dynamic precursor dosing for atomic layer deposition
CN201610865153.1A CN107068585B (zh) 2015-10-02 2016-09-29 用于原子层沉积的动态前体投配

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CN112086381B true CN112086381B (zh) 2025-04-15

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US (2) US10094018B2 (https=)
JP (1) JP6804920B2 (https=)
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Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US11970772B2 (en) 2014-08-22 2024-04-30 Lam Research Corporation Dynamic precursor dosing for atomic layer deposition
US10094018B2 (en) 2014-10-16 2018-10-09 Lam Research Corporation Dynamic precursor dosing for atomic layer deposition
US11072860B2 (en) 2014-08-22 2021-07-27 Lam Research Corporation Fill on demand ampoule refill
US11393703B2 (en) 2018-06-18 2022-07-19 Applied Materials, Inc. Apparatus and method for controlling a flow process material to a deposition chamber
TWI821363B (zh) * 2018-08-31 2023-11-11 美商應用材料股份有限公司 前驅物遞送系統
CN109881180B (zh) * 2019-01-31 2020-07-07 华中科技大学 一种用于微纳米颗粒的快速循环原子层沉积设备
KR20240160679A (ko) 2019-05-01 2024-11-11 램 리써치 코포레이션 변조된 원자 층 증착
US12431349B2 (en) 2019-06-07 2025-09-30 Lam Research Corporation In-situ control of film properties during atomic layer deposition
KR20220046645A (ko) 2019-08-12 2022-04-14 램 리써치 코포레이션 반도체 제작시 동적 프로세스 제어
KR102703185B1 (ko) 2019-09-02 2024-09-05 삼성전자주식회사 가스 공급기 및 이를 포함하는 박막 증착 장치
JP6857760B2 (ja) * 2020-02-18 2021-04-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
CN115867999A (zh) 2020-06-06 2023-03-28 朗姆研究公司 用于半导体处理的可移除喷头面板
CN115917039A (zh) 2020-07-29 2023-04-04 朗姆研究公司 使用起泡器的浓度控制
US11566327B2 (en) 2020-11-20 2023-01-31 Applied Materials, Inc. Methods and apparatus to reduce pressure fluctuations in an ampoule of a chemical delivery system
US11487304B2 (en) * 2021-01-08 2022-11-01 Applied Materials, Inc. Process fluid path switching in recipe operations

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1977351A (zh) * 2004-05-20 2007-06-06 瓦里安半导体设备联合公司 等离子体离子注入系统的原位处理室制备方法
CN101040371A (zh) * 2004-08-16 2007-09-19 阿维扎技术公司 用于形成多组分介电薄膜的直接液体注入系统和方法

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1813318C3 (de) 1968-12-07 1974-01-03 Alexander 2000 Hamburg Kueckens Zeitgesteuerte Dosiervorrichtung für flüssige Medien aus festen und elastischen Behältern
JPS63136614A (ja) 1986-11-28 1988-06-08 Hitachi Ltd 処理装置
JP3250111B2 (ja) 1992-06-16 2002-01-28 株式会社日立製作所 光磁気ディスク装置
US5465766A (en) 1993-04-28 1995-11-14 Advanced Delivery & Chemical Systems, Inc. Chemical refill system for high purity chemicals
JP3380610B2 (ja) * 1993-11-30 2003-02-24 株式会社サムコインターナショナル研究所 液体原料ｃｖｄ装置
US5944940A (en) 1996-07-09 1999-08-31 Gamma Precision Technology, Inc. Wafer transfer system and method of using the same
TW535216B (en) 1996-09-13 2003-06-01 Tokyo Electron Ltd Photoresist processing method and photoresist processing system
TW382749B (en) 1996-12-24 2000-02-21 Tokyo Electron Ltd Liquid supplying device
JPH11312649A (ja) 1998-04-30 1999-11-09 Nippon Asm Kk Ｃｖｄ装置
JP2004031782A (ja) * 2002-06-27 2004-01-29 Sumitomo Chem Co Ltd 有機金属ガス供給装置
US6921062B2 (en) 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US20040093938A1 (en) 2002-11-15 2004-05-20 Chung-Te Tsai Liquid in pipeline and liquid level detection and warning system
DE10307672A1 (de) 2003-02-21 2004-09-09 Krohne Meßtechnik GmbH & Co KG Verfahren zum Abfüllen eines flüssigen oder schüttbaren Mediums in ein Behältnis
JP2005056918A (ja) * 2003-08-06 2005-03-03 Hitachi Kokusai Electric Inc 基板処理装置
US7608300B2 (en) * 2003-08-27 2009-10-27 Applied Materials, Inc. Methods and devices to reduce defects in dielectric stack structures
US20050095859A1 (en) 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
JP5264039B2 (ja) * 2004-08-10 2013-08-14 東京エレクトロン株式会社 薄膜形成装置及び薄膜形成方法
JP4626956B2 (ja) * 2004-10-18 2011-02-09 東京エレクトロン株式会社 半導体製造装置、液量監視装置、半導体製造装置の液体材料監視方法、及び、液量監視方法
US20060121192A1 (en) 2004-12-02 2006-06-08 Jurcik Benjamin J Liquid precursor refill system
US7485338B2 (en) * 2005-03-31 2009-02-03 Tokyo Electron Limited Method for precursor delivery
US8951478B2 (en) 2006-03-30 2015-02-10 Applied Materials, Inc. Ampoule with a thermally conductive coating
US7562672B2 (en) * 2006-03-30 2009-07-21 Applied Materials, Inc. Chemical delivery apparatus for CVD or ALD
US7775508B2 (en) 2006-10-31 2010-08-17 Applied Materials, Inc. Ampoule for liquid draw and vapor draw with a continuous level sensor
EP2094406B1 (en) * 2006-11-22 2015-10-14 Soitec Method, apparatus and gate valve assembly for forming monocrystalline group iii-v semiconductor material
KR100855582B1 (ko) 2007-01-12 2008-09-03 삼성전자주식회사 액 공급 장치 및 방법, 상기 장치를 가지는 기판 처리설비, 그리고 기판 처리 방법
JP5305328B2 (ja) * 2007-06-07 2013-10-02 株式会社日立国際電気 基板処理装置
EP2011898B1 (en) 2007-07-03 2021-04-07 Beneq Oy Method in depositing metal oxide materials
EP2247819B1 (en) 2008-01-18 2022-11-02 Pivotal Systems Corporation Method and apparatus for in situ testing of gas flow controllers
US20090214777A1 (en) 2008-02-22 2009-08-27 Demetrius Sarigiannis Multiple ampoule delivery systems
US8394454B2 (en) 2008-03-08 2013-03-12 Omniprobe, Inc. Method and apparatus for precursor delivery system for irradiation beam instruments
JP4418001B2 (ja) * 2008-03-12 2010-02-17 三井造船株式会社 原料供給装置
US20090255466A1 (en) 2008-04-11 2009-10-15 Peck John D Reagent dispensing apparatus and delivery method
US20100062149A1 (en) 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
WO2010056576A1 (en) 2008-11-11 2010-05-20 Praxair Technology, Inc. Reagent dispensing apparatuses and delivery methods
JP2012515842A (ja) * 2009-01-16 2012-07-12 ビーコ・インスツルメンツ・インコーポレーテッド ルテニウムの低温堆積のための組成物及び方法
WO2010135250A2 (en) 2009-05-22 2010-11-25 Applied Materials, Inc. Methods for determining the quantity of precursor in an ampoule
US9028924B2 (en) * 2010-03-25 2015-05-12 Novellus Systems, Inc. In-situ deposition of film stacks
US8728956B2 (en) * 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
KR20140050681A (ko) 2011-07-22 2014-04-29 어플라이드 머티어리얼스, 인코포레이티드 Ald/cvd 프로세스들을 위한 반응물 전달 시스템
CN103041954A (zh) 2011-10-13 2013-04-17 北大方正集团有限公司 一种用于旋涂设备的液位报警系统
US20130196078A1 (en) * 2012-01-31 2013-08-01 Joseph Yudovsky Multi-Chamber Substrate Processing System
US8728955B2 (en) * 2012-02-14 2014-05-20 Novellus Systems, Inc. Method of plasma activated deposition of a conformal film on a substrate surface
JP2015190035A (ja) * 2014-03-28 2015-11-02 東京エレクトロン株式会社 ガス供給機構およびガス供給方法、ならびにそれを用いた成膜装置および成膜方法
KR102387359B1 (ko) 2014-04-18 2022-04-14 어플라이드 머티어리얼스, 인코포레이티드 자동-리필 앰풀 및 사용 방법들
US10094018B2 (en) 2014-10-16 2018-10-09 Lam Research Corporation Dynamic precursor dosing for atomic layer deposition
US20160052651A1 (en) * 2014-08-22 2016-02-25 Lam Research Corporation Fill on demand ampoule
US11072860B2 (en) 2014-08-22 2021-07-27 Lam Research Corporation Fill on demand ampoule refill
US9460915B2 (en) * 2014-09-12 2016-10-04 Lam Research Corporation Systems and methods for reducing backside deposition and mitigating thickness changes at substrate edges
US9613818B2 (en) * 2015-05-27 2017-04-04 Lam Research Corporation Deposition of low fluorine tungsten by sequential CVD process

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1977351A (zh) * 2004-05-20 2007-06-06 瓦里安半导体设备联合公司 等离子体离子注入系统的原位处理室制备方法
CN101040371A (zh) * 2004-08-16 2007-09-19 阿维扎技术公司 用于形成多组分介电薄膜的直接液体注入系统和方法

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