CN112005350A - 半导体装置 - Google Patents

半导体装置 Download PDF

Info

Publication number
CN112005350A
CN112005350A CN201980027125.4A CN201980027125A CN112005350A CN 112005350 A CN112005350 A CN 112005350A CN 201980027125 A CN201980027125 A CN 201980027125A CN 112005350 A CN112005350 A CN 112005350A
Authority
CN
China
Prior art keywords
oxide
insulator
conductor
transistor
addition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201980027125.4A
Other languages
English (en)
Chinese (zh)
Inventor
根井孝征
村川努
竹内敏彦
菅谷健太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to CN202411539728.1A priority Critical patent/CN119421415A/zh
Publication of CN112005350A publication Critical patent/CN112005350A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/312—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with a bit line higher than the capacitor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
CN201980027125.4A 2018-04-27 2019-04-16 半导体装置 Pending CN112005350A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202411539728.1A CN119421415A (zh) 2018-04-27 2019-04-16 半导体装置、存储装置及半导体装置的制造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018-086578 2018-04-27
JP2018086578 2018-04-27
PCT/IB2019/053094 WO2019207410A1 (ja) 2018-04-27 2019-04-16 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202411539728.1A Division CN119421415A (zh) 2018-04-27 2019-04-16 半导体装置、存储装置及半导体装置的制造方法

Publications (1)

Publication Number Publication Date
CN112005350A true CN112005350A (zh) 2020-11-27

Family

ID=68293812

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201980027125.4A Pending CN112005350A (zh) 2018-04-27 2019-04-16 半导体装置
CN202411539728.1A Pending CN119421415A (zh) 2018-04-27 2019-04-16 半导体装置、存储装置及半导体装置的制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202411539728.1A Pending CN119421415A (zh) 2018-04-27 2019-04-16 半导体装置、存储装置及半导体装置的制造方法

Country Status (4)

Country Link
US (3) US11881513B2 (https=)
JP (4) JP7130738B2 (https=)
CN (2) CN112005350A (https=)
WO (1) WO2019207410A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113330555A (zh) * 2019-01-29 2021-08-31 株式会社半导体能源研究所 摄像装置及电子设备
US20240298435A1 (en) * 2021-09-17 2024-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and storage device
JPWO2024100467A1 (https=) * 2022-11-11 2024-05-16

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160104521A1 (en) * 2014-10-10 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
US20160232956A1 (en) * 2015-02-09 2016-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, central processing unit, and electronic device
US20170221899A1 (en) * 2016-01-29 2017-08-03 Semiconductor Energy Laboratory Co., Ltd. Microcontroller System
CN107210227A (zh) * 2015-02-06 2017-09-26 株式会社半导体能源研究所 半导体装置及其制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5190275B2 (ja) 2008-01-09 2013-04-24 パナソニック株式会社 半導体メモリセル及びそれを用いた半導体メモリアレイ
US9653613B2 (en) 2015-02-27 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20160114511A (ko) 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP2016225585A (ja) 2015-05-26 2016-12-28 株式会社半導体エネルギー研究所 半導体装置
JP2016225613A (ja) 2015-05-26 2016-12-28 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の駆動方法
US10424671B2 (en) 2015-07-29 2019-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
US9773919B2 (en) 2015-08-26 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10096718B2 (en) 2016-06-17 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Transistor, electronic device, manufacturing method of transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160104521A1 (en) * 2014-10-10 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
CN107210227A (zh) * 2015-02-06 2017-09-26 株式会社半导体能源研究所 半导体装置及其制造方法
US20160232956A1 (en) * 2015-02-09 2016-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, central processing unit, and electronic device
US20170221899A1 (en) * 2016-01-29 2017-08-03 Semiconductor Energy Laboratory Co., Ltd. Microcontroller System

Also Published As

Publication number Publication date
JPWO2019207410A1 (ja) 2021-05-13
US12484270B2 (en) 2025-11-25
JP7130738B2 (ja) 2022-09-05
US20240088232A1 (en) 2024-03-14
US20260090047A1 (en) 2026-03-26
US11881513B2 (en) 2024-01-23
US20210167174A1 (en) 2021-06-03
JP2022164743A (ja) 2022-10-27
JP2024095704A (ja) 2024-07-10
JP7724321B2 (ja) 2025-08-15
JP2025163171A (ja) 2025-10-28
CN119421415A (zh) 2025-02-11
JP7462712B2 (ja) 2024-04-05
WO2019207410A1 (ja) 2019-10-31

Similar Documents

Publication Publication Date Title
TWI794340B (zh) 半導體裝置以及半導體裝置的製造方法
JP7229669B2 (ja) 半導体装置、および半導体装置の作製方法
CN111788696A (zh) 半导体装置及半导体装置的制造方法
JP7170671B2 (ja) 半導体装置
CN111788698A (zh) 半导体装置及半导体装置的制造方法
JP7724321B2 (ja) 半導体装置
JP7221216B2 (ja) 半導体装置
CN111742414A (zh) 半导体装置以及半导体装置的制造方法
CN111316448A (zh) 半导体装置及半导体装置的制造方法
JP7736736B2 (ja) 半導体装置
CN111819670A (zh) 叠层体及半导体装置
WO2019155329A1 (ja) 半導体装置、及び半導体装置の作製方法
CN111615743A (zh) 半导体装置及半导体装置的制造方法
WO2019207411A1 (ja) 半導体装置、および半導体装置の作製方法
CN111448669A (zh) 半导体装置及半导体装置的制造方法
JP7254462B2 (ja) 半導体装置の作製方法
JP2019153613A (ja) 半導体装置、および半導体装置の作製方法
CN111656530A (zh) 半导体装置及半导体装置的制造方法
JP2019186496A (ja) 半導体装置、および半導体装置の作製方法
JP2019145539A (ja) 半導体装置、および半導体装置の作製方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20201127