JP7130738B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7130738B2
JP7130738B2 JP2020515311A JP2020515311A JP7130738B2 JP 7130738 B2 JP7130738 B2 JP 7130738B2 JP 2020515311 A JP2020515311 A JP 2020515311A JP 2020515311 A JP2020515311 A JP 2020515311A JP 7130738 B2 JP7130738 B2 JP 7130738B2
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Japan
Prior art keywords
oxide
insulator
conductor
transistor
oxygen
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JP2020515311A
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Japanese (ja)
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JPWO2019207410A1 (ja
JPWO2019207410A5 (https=
Inventor
孝征 根井
努 村川
敏彦 竹内
健太郎 菅谷
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JPWO2019207410A1 publication Critical patent/JPWO2019207410A1/ja
Publication of JPWO2019207410A5 publication Critical patent/JPWO2019207410A5/ja
Priority to JP2022133256A priority Critical patent/JP7462712B2/ja
Application granted granted Critical
Publication of JP7130738B2 publication Critical patent/JP7130738B2/ja
Priority to JP2024049006A priority patent/JP7724321B2/ja
Priority to JP2025129914A priority patent/JP2025163171A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/312—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with a bit line higher than the capacitor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
JP2020515311A 2018-04-27 2019-04-16 半導体装置 Active JP7130738B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2022133256A JP7462712B2 (ja) 2018-04-27 2022-08-24 半導体装置
JP2024049006A JP7724321B2 (ja) 2018-04-27 2024-03-26 半導体装置
JP2025129914A JP2025163171A (ja) 2018-04-27 2025-08-04 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018086578 2018-04-27
JP2018086578 2018-04-27
PCT/IB2019/053094 WO2019207410A1 (ja) 2018-04-27 2019-04-16 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022133256A Division JP7462712B2 (ja) 2018-04-27 2022-08-24 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2019207410A1 JPWO2019207410A1 (ja) 2021-05-13
JPWO2019207410A5 JPWO2019207410A5 (https=) 2022-04-14
JP7130738B2 true JP7130738B2 (ja) 2022-09-05

Family

ID=68293812

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2020515311A Active JP7130738B2 (ja) 2018-04-27 2019-04-16 半導体装置
JP2022133256A Active JP7462712B2 (ja) 2018-04-27 2022-08-24 半導体装置
JP2024049006A Active JP7724321B2 (ja) 2018-04-27 2024-03-26 半導体装置
JP2025129914A Pending JP2025163171A (ja) 2018-04-27 2025-08-04 半導体装置

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2022133256A Active JP7462712B2 (ja) 2018-04-27 2022-08-24 半導体装置
JP2024049006A Active JP7724321B2 (ja) 2018-04-27 2024-03-26 半導体装置
JP2025129914A Pending JP2025163171A (ja) 2018-04-27 2025-08-04 半導体装置

Country Status (4)

Country Link
US (3) US11881513B2 (https=)
JP (4) JP7130738B2 (https=)
CN (2) CN112005350A (https=)
WO (1) WO2019207410A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113330555A (zh) * 2019-01-29 2021-08-31 株式会社半导体能源研究所 摄像装置及电子设备
US20240298435A1 (en) * 2021-09-17 2024-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and storage device
JPWO2024100467A1 (https=) * 2022-11-11 2024-05-16

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016125052A1 (ja) 2015-02-06 2016-08-11 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2016149175A (ja) 2015-02-09 2016-08-18 株式会社半導体エネルギー研究所 半導体装置、中央処理装置及び電子機器
JP2017045989A (ja) 2015-08-26 2017-03-02 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2017228777A (ja) 2016-06-17 2017-12-28 株式会社半導体エネルギー研究所 トランジスタ、電子機器、トランジスタの作製方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5190275B2 (ja) 2008-01-09 2013-04-24 パナソニック株式会社 半導体メモリセル及びそれを用いた半導体メモリアレイ
WO2016055903A1 (en) 2014-10-10 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
US9653613B2 (en) 2015-02-27 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20160114511A (ko) 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP2016225585A (ja) 2015-05-26 2016-12-28 株式会社半導体エネルギー研究所 半導体装置
JP2016225613A (ja) 2015-05-26 2016-12-28 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の駆動方法
US10424671B2 (en) 2015-07-29 2019-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
US20170221899A1 (en) 2016-01-29 2017-08-03 Semiconductor Energy Laboratory Co., Ltd. Microcontroller System

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016125052A1 (ja) 2015-02-06 2016-08-11 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US20180019343A1 (en) 2015-02-06 2018-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2016149175A (ja) 2015-02-09 2016-08-18 株式会社半導体エネルギー研究所 半導体装置、中央処理装置及び電子機器
JP2017045989A (ja) 2015-08-26 2017-03-02 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2017228777A (ja) 2016-06-17 2017-12-28 株式会社半導体エネルギー研究所 トランジスタ、電子機器、トランジスタの作製方法

Also Published As

Publication number Publication date
JPWO2019207410A1 (ja) 2021-05-13
US12484270B2 (en) 2025-11-25
US20240088232A1 (en) 2024-03-14
US20260090047A1 (en) 2026-03-26
US11881513B2 (en) 2024-01-23
US20210167174A1 (en) 2021-06-03
JP2022164743A (ja) 2022-10-27
JP2024095704A (ja) 2024-07-10
JP7724321B2 (ja) 2025-08-15
JP2025163171A (ja) 2025-10-28
CN119421415A (zh) 2025-02-11
JP7462712B2 (ja) 2024-04-05
WO2019207410A1 (ja) 2019-10-31
CN112005350A (zh) 2020-11-27

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