JPWO2019207410A5 - - Google Patents

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Publication number
JPWO2019207410A5
JPWO2019207410A5 JP2020515311A JP2020515311A JPWO2019207410A5 JP WO2019207410 A5 JPWO2019207410 A5 JP WO2019207410A5 JP 2020515311 A JP2020515311 A JP 2020515311A JP 2020515311 A JP2020515311 A JP 2020515311A JP WO2019207410 A5 JPWO2019207410 A5 JP WO2019207410A5
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JP
Japan
Prior art keywords
insulator
oxide
conductor
layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2020515311A
Other languages
English (en)
Japanese (ja)
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JPWO2019207410A1 (ja
JP7130738B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/IB2019/053094 external-priority patent/WO2019207410A1/ja
Publication of JPWO2019207410A1 publication Critical patent/JPWO2019207410A1/ja
Publication of JPWO2019207410A5 publication Critical patent/JPWO2019207410A5/ja
Priority to JP2022133256A priority Critical patent/JP7462712B2/ja
Application granted granted Critical
Publication of JP7130738B2 publication Critical patent/JP7130738B2/ja
Priority to JP2024049006A priority patent/JP7724321B2/ja
Priority to JP2025129914A priority patent/JP2025163171A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2020515311A 2018-04-27 2019-04-16 半導体装置 Active JP7130738B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2022133256A JP7462712B2 (ja) 2018-04-27 2022-08-24 半導体装置
JP2024049006A JP7724321B2 (ja) 2018-04-27 2024-03-26 半導体装置
JP2025129914A JP2025163171A (ja) 2018-04-27 2025-08-04 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018086578 2018-04-27
JP2018086578 2018-04-27
PCT/IB2019/053094 WO2019207410A1 (ja) 2018-04-27 2019-04-16 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022133256A Division JP7462712B2 (ja) 2018-04-27 2022-08-24 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2019207410A1 JPWO2019207410A1 (ja) 2021-05-13
JPWO2019207410A5 true JPWO2019207410A5 (https=) 2022-04-14
JP7130738B2 JP7130738B2 (ja) 2022-09-05

Family

ID=68293812

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2020515311A Active JP7130738B2 (ja) 2018-04-27 2019-04-16 半導体装置
JP2022133256A Active JP7462712B2 (ja) 2018-04-27 2022-08-24 半導体装置
JP2024049006A Active JP7724321B2 (ja) 2018-04-27 2024-03-26 半導体装置
JP2025129914A Pending JP2025163171A (ja) 2018-04-27 2025-08-04 半導体装置

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2022133256A Active JP7462712B2 (ja) 2018-04-27 2022-08-24 半導体装置
JP2024049006A Active JP7724321B2 (ja) 2018-04-27 2024-03-26 半導体装置
JP2025129914A Pending JP2025163171A (ja) 2018-04-27 2025-08-04 半導体装置

Country Status (4)

Country Link
US (3) US11881513B2 (https=)
JP (4) JP7130738B2 (https=)
CN (2) CN112005350A (https=)
WO (1) WO2019207410A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113330555A (zh) * 2019-01-29 2021-08-31 株式会社半导体能源研究所 摄像装置及电子设备
US20240298435A1 (en) * 2021-09-17 2024-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and storage device
JPWO2024100467A1 (https=) * 2022-11-11 2024-05-16

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5190275B2 (ja) 2008-01-09 2013-04-24 パナソニック株式会社 半導体メモリセル及びそれを用いた半導体メモリアレイ
WO2016055903A1 (en) 2014-10-10 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
KR102865410B1 (ko) 2015-02-06 2025-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6717604B2 (ja) 2015-02-09 2020-07-01 株式会社半導体エネルギー研究所 半導体装置、中央処理装置及び電子機器
US9653613B2 (en) 2015-02-27 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20160114511A (ko) 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP2016225585A (ja) 2015-05-26 2016-12-28 株式会社半導体エネルギー研究所 半導体装置
JP2016225613A (ja) 2015-05-26 2016-12-28 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の駆動方法
US10424671B2 (en) 2015-07-29 2019-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
US9773919B2 (en) 2015-08-26 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20170221899A1 (en) 2016-01-29 2017-08-03 Semiconductor Energy Laboratory Co., Ltd. Microcontroller System
US10096718B2 (en) 2016-06-17 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Transistor, electronic device, manufacturing method of transistor

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