CN111986990A - 硬掩模、基板处理方法以及基板处理装置 - Google Patents

硬掩模、基板处理方法以及基板处理装置 Download PDF

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CN111986990A
CN111986990A CN202010413378.XA CN202010413378A CN111986990A CN 111986990 A CN111986990 A CN 111986990A CN 202010413378 A CN202010413378 A CN 202010413378A CN 111986990 A CN111986990 A CN 111986990A
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film
hard mask
substrate
substrate processing
stress
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守屋刚
石坂忠大
森贞佳纪
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • G—PHYSICS
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Abstract

本发明提供一种硬掩模、基板处理方法以及基板处理装置，该硬掩膜进行了应力调整。所述硬掩模形成于在基板形成的对象膜之上，并且是通过将一个以上的具有第一方向的应力的第一膜和一个以上的具有与所述第一方向相反的第二方向的应力的第二膜交替地层叠而成的硬掩模。

Description

硬掩模、基板处理方法以及基板处理装置
技术领域
本公开涉及一种硬掩模、基板处理方法以及基板处理装置。
背景技术
例如，已知将包含碳的硬掩模用作蚀刻掩模。
在专利文献1中公开了一种基板处理方法，其包括：在基板的处理面上沉积器件层；在器件层上沉积纳米晶金刚石层；将纳米晶金刚石层进行图案化并进行蚀刻；对器件层进行蚀刻来形成沟槽；以及将纳米晶金刚石层进行灰化。
现有技术文献
专利文献
专利文献1：日本特开2017-224823号公报
发明内容
发明要解决的问题
在一个方面中，本公开提供一种进行了应力调整的硬掩模、基板处理方法以及基板处理装置。
用于解决问题的方案
为了解决上述课题，根据一个方式，提供如下一种硬掩模：其形成于在基板形成的对象膜之上，并且是通过将一个以上的具有第一方向的应力的第一膜和一个以上的具有与所述第一方向相反的第二方向的应力的第二膜交替地层叠而成的硬掩模。
发明的效果
根据一个方面，能够提供一种进行了应力调整的硬掩模、基板处理方法以及基板处理装置。
附图说明
图1是表示本实施方式所涉及的基板处理系统的一例的结构示意图。
图2是表示本实施方式所涉及的硬掩模形成装置的一例的概要截面图。
图3是表示本实施方式所涉及的前体蒸发装置的一例的概要截面图。
图4是表示本实施方式所涉及的基板处理系统的动作的一例的流程图。
图5是各工序中的基板的截面示意图。
图6是表示一个实施方式所涉及的硬掩模形成装置的动作的流程图。
图7是形成硬掩模时的各工序中的基板的截面示意图。
图8是参考例所涉及的形成有硬掩模的基板的截面示意图。
具体实施方式
下面，参照附图来说明用于实施本公开的方式。在各附图中，对相同的结构部分标注相同的标记，并且有时省略重复的说明。
<基板处理系统>
使用图1来说明本实施方式所涉及的基板处理系统100。图1是表示本实施方式所涉及的基板处理系统100的一例的结构示意图。
基板处理系统100具备硬掩模形成装置101、图案形成装置102、蚀刻装置103、灰化装置104、搬送装置105～107以及控制装置108。
硬掩模形成装置101为在形成于基板W的处理面的对象膜210(参照后述的图5的(a))之上形成硬掩模220(参照后述的图5的(b))的装置。此外，在后文中叙述硬掩模形成装置101的详情。
图案形成装置102为在硬掩模220形成图案230(参照后述的图5的(c))的装置。此外，图案形成装置102例如构成为能够执行以下工序：在硬掩模220之上进行光致抗蚀剂层(未图示)的成膜的工序；在光致抗蚀剂层进行图案的显影的光刻工序；以及经由形成有图案的光致抗蚀剂层对硬掩模220进行蚀刻来在硬掩模220形成图案230的工序。此外，执行这些工序的装置能够使用公知的装置，省略详细的说明。
蚀刻装置103为经由形成有图案230的硬掩模220蚀刻对象膜210，来在对象膜210形成沟、槽、孔等特征构造240的装置。此外，蚀刻装置103能够使用公知的装置，因此省略详细的说明。另外，可以通过湿法工艺进行蚀刻，也可以通过干法工艺进行蚀刻，并无限定。
灰化装置104为通过将硬掩模220进行灰化来从基板W去除硬掩模220的装置。此外，灰化装置104例如能够使用通过氧等离子体将硬掩模220进行灰化的装置。此外，灰化装置104能够使用公知的装置，因此省略详细的说明。
搬送装置105在硬掩模形成装置101与图案形成装置102之间搬送基板W或收容有基板W的承载件。搬送装置106在图案形成装置102与蚀刻装置103之间搬送基板W或收容有基板W的承载件。搬送装置107在蚀刻装置103与灰化装置104之间搬送基板W或收容有基板W的承载件。
控制装置108通过控制上述各结构装置来控制由基板处理系统100进行的全部处理。控制装置108具有CPU(Central Processing Unit：中央处理单元)、ROM(Read OnlyMemory：只读存储器)以及RAM(Random Access Memory：随机存取存储器)。CPU按照RAM等存储区域中保存的制程来执行期望的处理。在制程中设定有针对工艺条件的装置的控制信息，即，工艺时间、各种气体流量、压力(气体的排气)等。
<硬掩模形成装置>
接着，使用图2和图3来说明硬掩模形成装置101。图2是表示本实施方式所涉及的硬掩模形成装置101的一例的概要截面图。
在此，通过本实施方式所涉及的硬掩模形成装置101形成的硬掩模220(参照后述的图5的(b))构成为一个以上的第一膜221与一个以上的第二膜222交替地层叠而成的层叠膜。硬掩模形成装置101具有供给第一膜221的原料气体的第一气体供给系统11和供给第二膜222的原料气体的第二气体供给系统12。硬掩模形成装置101例如为CVD(Chemical VaporDeposition：化学气相沉积)装置，一边切换原料气体一边进行成膜，由此形成一个以上的第一膜221与一个以上的第二膜222交替地层叠而成的硬掩模220。第一气体供给系统11具有原料气体供给源11S和阀11V。第二气体供给系统12具有原料气体供给源(前体蒸发装置)12S和阀12V。通过控制阀11V、12V的开闭，能够切换向处理空间26供给的原料气体。
硬掩模形成装置101具有筒体状的处理容器20。处理容器20具有内径大的上部室和内径比该上部室的内径小的下部室，该下部室内形成为排气空间21。在划分排气空间21的下部侧壁形成有排气口22。排气口22与用于对处理容器20内的氛围气体进行排气的排气系统15连接。排气系统15具有真空泵等，能够将处理容器20内的压力控制为规定的压力。
在处理容器20的侧壁形成有用于搬出和搬入基板W的开口23。另外，在开口23设置有用于将该开口23气密地进行开闭的闸阀24。
在处理容器20的侧壁、顶部分别设置有加热器25A、25B。加热器25A、25B对处理容器20的侧壁、顶部进行加热来维持规定的温度，由此防止原料气体固化、液化。
另外，在处理容器20的上部室内设置有载置台30，该载置台30用于载置并且保持作为被处理体的基板W。基板W载置于载置台30的上表面。载置台30的下表面与支柱31的上端部固定在一起。支柱31将划分排气空间21的底部贯通并沿上下方向延伸。支柱31通过未图示的致动器进行升降。由此，能够使载置台30升降，从而能够使载置台30停止于上下方向上的任意位置。另外，在支柱31将处理容器20贯通的贯通部设置有能够伸缩的金属制的波纹管32，以维持处理容器20内的气密性并且容许载置台30进行升降。
在载置台30的上部侧设置有加热器33。加热器33通过将载置台30进行加热，来将载置于载置台30的基板W进行加热。另外，在载置台30的下部侧设置有制冷剂通路34，该制冷剂通路34用于流通将载置台30的下部、侧部进行冷却来进行温度调整的冷却水等制冷剂。
另外，在载置台30的周边部设置有多个(在图2中仅示出两个。)销插通孔35。在销插通孔35中贯穿有升降销36。升降销36的下端部被升降臂37支承。升降臂37与升降杆38固定。升降杆38贯通处理容器20的底部并且沿上下方向延伸。升降杆38通过未图示的致动器进行升降。由此，能够使升降销36升降。例如，在使载置台30向下方降下后的状态下，使升降销36从载置台30突出，由此升降销36能够支承基板W，将基板W抬离载置台30的上表面。另外，在升降销36支承了基板W的状态下，使升降销36下降，由此能够将基板W载置于载置台30的上表面。另外，在升降杆38将处理容器20贯通的贯通部设置有能够伸缩的金属制的波纹管39，以维持处理容器20内的气密性并且容许升降销36进行升降。
在载置台30的上表面外周部设置有盖环，以防止膜附着于基板W的斜角部。
另外，在处理容器20的顶部，以与载置台30相向的方式设置用于导入所需的气体的气体导入部50。具体地说，气体导入部50由喷淋头51构成。在喷淋头51的下表面，以与载置台30上的基板W相向的方式形成有多个气体导入口52A。另外，以包围形成有气体导入口52A的区域的方式形成有气体导入口52B。喷淋头51内以被分隔为两个空间的方式被分区，划分出扩散室53A、53B。扩散室53A与气体导入口52A连通。扩散室53B与气体导入口52B连通。在处理容器20的顶部形成有与扩散室53A连通的气体导入口54A以及与扩散室53B连通的气体导入口54B。气体导入口54A与第一气体供给系统11连接。气体导入口54B与第二气体供给系统12连接。
设置有使喷淋头51的侧壁部分进一步向下方延伸而形成的圆环状的内部划分壁55。内部划分壁55以包围载置台30的上方的处理空间26的周围的方式设置，使该内部划分壁55的下端部接近载置台30。而且，在内部划分壁55的下端部与载置台30的周缘部之间形成有排气用的气体出口27。气体出口27沿载置台30的周向形成为环状，通过该气体出口27使处理空间26的氛围气体从基板W的外周侧均等地进行排气。
通过打开阀11V，来使原料气体供给源11S的原料气体经过气体导入口54A、扩散室53A后从气体导入口52A导入处理空间26。同样地，通过打开阀12V，来使原料气体供给源12S的原料气体经过气体导入口54B、扩散室53B后从气体导入口52B导入处理空间26。之后，处理空间26的氛围气体经由气体出口27、排气空间21、排气口22向排气系统15排气。
载置台30具有下部电极板41，载置台30为设置于基板W的下部的下部电极。另外，喷淋头51为设置于基板W的上部的上部电极。
基板处理系统100具备第一高频电源61和第二高频电源62。第一高频电源61为产生第一高频电力的电源。第一高频电力具有适于生成等离子体的频率。第一高频电力的频率例如为12.88MHz～220MHz的范围内的频率。第一高频电源61经由匹配器63而与下部电极连接。匹配器63具有用于使第一高频电源61的输出阻抗与负载侧(下部电极侧)的阻抗匹配的电路。此外，第一高频电源61可以经由匹配器63而与上部电极连接。第一高频电源61构成为等离子体生成部的一例。
第二高频电源62为产生第二高频电力的电源。第二高频电力具有比第一高频电力的频率低的频率。在使用第一高频电力并且使用第二高频电力的情况下，第二高频电力被用作用于向基板W吸引离子的偏压用的高频电力。第二高频电力的频率例如为400kHz～13.56MHz的范围内的频率。第二高频电源62经由匹配器64而与下部电极连接。匹配器64具有用于使第二高频电源62的输出阻抗与负载侧(下部电极侧)的阻抗匹配的电路。第二高频电源62构成为等离子体生成部的一例。
从气体导入部50向处理空间26导入气体，来生成等离子体。另外，通过供给第一高频电力以及/或者第二高频电力，来在上部电极与下部电极之间生成高频电场。生成的高频电场生成等离子体。
装置控制部90控制阀11V、12V、排气系统15的真空泵、闸阀24、加热器25A、25B、加热器33、支柱31的致动器、升降杆38的致动器等，由此控制由硬掩模形成装置101进行的全部处理。装置控制部90具有CPU(Central Processing Unit：中央处理单元)、ROM(ReadOnly Memory：只读存储器)以及RAM(Random Access Memory：随机存取存储器)。装置控制部90基于控制装置108的指令来执行期望的处理。
在此，第一膜221例如为碳膜，作为第一气体供给系统11供给的原料气体，能够使用含碳气体(例如CH4、C2H2、C2H4、C3H6等)。另外，第二膜222例如为钌(Ru)膜，作为第二气体供给系统12供给的原料气体，能够使用含Ru气体(例如Ru3(CO)12等)。在此，作为第二膜222的前体的Ru3(CO)12是常温下为固体的物质，原料气体供给源12S将Ru3(CO)12气化后供给至气体导入口54B。
图3是表示原料气体供给源(前体蒸发装置)12S的一例的概要截面图。
前体蒸发装置12S具有容器71，所述容器71具有外壁71a和底部71b。另外，前体蒸发装置12S具有以与容器71密闭接合的方式构成的盖72。盖72具有出口72a。出口72a与气体导入口54B(参照图2)连接。
在容器71的内部具有基底托盘73和上部托盘74。基底托盘73具有圆板状的底板73a和沿底板73a的外周形成的外壁73b，在外壁73b的内侧保持固体的前体80。上部托盘74具有带孔的圆板状的底板74a、沿底板74a的外周形成的外壁74b以及沿底板74a的内周形成的内壁74c，在外壁74b与内壁74c之间保持固体的前体80。内壁74c的高度比外壁74b的高度低。基底托盘73设置于容器71的底部71b上。基底托盘73的外壁73b与上部托盘74的底板73a抵接，且能够堆叠。另外，上部托盘74的外壁74b与其它上部托盘74的底板73a抵接，且能够堆叠。由此，在容器71的外壁71a与堆叠后的基底托盘73和上部托盘74的外壁73b、74b之间形成环状空间75。另外，通过堆叠后的上部托盘74的内壁74c形成柱状空间76。
在基底托盘73的外壁73b设置有开口73d。另外，在上部托盘74的外壁74b设置有开口74d。在盖72设置有用于向环状空间75供给载气的开口72b。
前体蒸发装置12S具备未图示的加热器，该加热器将被基底托盘73和上部托盘74保持的固体的前体80加热至规定的温度。由此，形成前体80的气相。
从开口72b供给的载气流入环状空间75，并且流入外壁73b、74b的开口73d、74d。前体80的气相被从开口73d、74d向柱状空间76流动的载气搬送，从盖72的出口72a进行排气，并且供给到气体导入口54B(参照图2)。此外，前体80例如为Ru3(CO)12。载气例如是作为抑制非活性气体Ar和Ru3(CO)12的成膜反应的气体的CO气体的混合气体。像这样，前体蒸发装置12S将Ru3(CO)12进行气化后供给至气体导入口54B。
<基板处理系统100的动作>
接着，使用图4和图5来说明本实施方式所涉及的基板处理系统100的动作的一例。图4是表示本实施方式所涉及的基板处理系统100的动作的一例的流程图。图5是各工序中的基板W的截面示意图。
首先，在步骤S1中，控制装置108提供基板W。控制装置108控制未图示的搬送装置来将基板W载置于硬掩模形成装置101的载置台30。当搬送装置从开口23退避后，控制装置108关闭闸阀24。
在此，在图5的(a)中示出载置于载置台30的基板W的截面示意图。如图5的(a)所示，在基板W中，在Si基板200之上形成有对象膜210。对象膜210例如由将氮化硅膜211和氧化硅膜212交替地层叠而成的层叠膜构成。此外，在图5的(a)中，将最下层的膜图示为氮化硅膜211，但并不限定于此，也可以为氧化硅膜212。另外，虽然将最上层的膜图示为氮化硅膜211，但并不限定于此，也可以为氧化硅膜212。另外，对象膜210并不限定于此，例如也可以为非晶硅膜、钨膜、氮化钛膜，但并不限定于此。
在步骤S2中，控制装置108控制硬掩模形成装置101来在基板W的对象膜210之上形成硬掩模220。
在此，在图5的(b)中示出形成有硬掩模220的基板W的截面示意图。如图5的(b)所示，硬掩模220由将一个以上的具有第一方向的应力的第一膜221和一个以上的具有与第一方向相反的第二方向的应力的第二膜222交替地层叠而成的层叠膜构成。另外，第一膜221和第二膜222使用相对于对象膜210而言蚀刻的选择性相对良好的材料。即，第一膜221和第二膜222相对于对象膜210的选择比大于1。由此，在后述的蚀刻(参照步骤S4)中，能够形成深宽比高的特征构造240。
在以下的说明中，设是第一膜221为碳膜来进行说明。此外，碳膜例如能够使用DLC(Diamond Like Carbon：类金刚石)膜。DLC膜具有压缩应力(compressive stress)。另外，设是第二膜222为Ru膜来进行说明。Ru膜具有拉伸应力(tensile stress)。
在此，使用图6和图7来进一步说明步骤S2中的硬掩模形成装置101的动作。图6是表示一个实施方式所涉及的硬掩模形成装置101的动作的流程图。图7是形成硬掩模时的各工序中的基板W的截面示意图。
在步骤S21中，控制装置108控制硬掩模形成装置101，通过等离子体CVD工艺在基板W的对象膜210之上进行第一膜221的成膜。
按照控制装置108的指令进行动作的装置控制部90控制加热器33来将基板W的温度设为规定的温度。另外，装置控制部90控制排气系统15来将处理空间26设为规定的压力。另外，装置控制部90打开阀11V来向处理空间26供给原料气体。另外，装置控制部90使用于生成等离子体的第一高频电源61和偏压用的第二高频电源62动作来生成等离子体。
此外，示出制程的一例。
供给气体：CH4、C2H2、C2H4、C3H6、H2、Ar、He、O2
载气：H2、Ar、He、O2
气体流量：2000sccm
载置台温度：100℃～550℃(基板W：～370℃)
处理容器内压力：2Pa～500Pa
第一高频电力：100MHz
第二高频电力：13.56MHz
由此，通过等离子体CVD工艺在基板W进行DLC膜(第一膜221)的成膜。在此，如图7的(a)所示，DLC膜(第一膜221)具有压缩应力(在附图中用黑底箭头表示)。
在步骤S22中，控制装置108控制硬掩模形成装置101，通过热CVD工艺在基板W的第一膜221之上进行第二膜222的成膜。
按照控制装置108的指令动作的装置控制部90控制加热器33来将基板W的温度设为规定的温度。另外，装置控制部90控制排气系统15来将处理空间26设为规定的压力。另外，装置控制部90打开阀12V来向处理空间26供给原料气体。
此外，示出制程的一例。
供给气体：Ru3(CO)12
载气：Ar+CO
气体流量：CO 100sccm
载置台温度：150℃
处理容器内压力：0.01Torr
由此，Ru3(CO)12在基板W的表面热分解，由此在基板W进行Ru膜(第二膜222)的成膜。在此，如图7的(b)所示，Ru膜(第二膜222)具有拉伸应力(在附图中用白底箭头表示)。
在步骤S23中，控制装置108控制硬掩模形成装置101，来在基板W重复进行第一膜221和第二膜222的成膜。当完成规定的层叠时，结束图6所示的处理。
像这样，通过将应力的方向相反的第一膜221和第二膜222进行层叠来形成硬掩模220，由此能够调整硬掩模220的应力。例如，能够调整硬掩模220的应力以使由于硬掩模220的应力引起的基板W的翘曲变小。
当完成硬掩模形成装置101中进行的硬掩模220的形成时，控制装置108控制搬送装置105来将基板W从硬掩模形成装置101搬送至图案形成装置102。
返回图4和图5，在步骤S3中，控制装置108控制图案形成装置102来在基板W的硬掩模220形成图案230。首先，在硬掩模220之上进行光致抗蚀剂层(未图示)的成膜。此外，也可以在硬掩模220与光致抗蚀剂层之间设置防反射层(未图示)。接着，根据期望将光致抗蚀剂层进行图案化。在使光致抗蚀剂显影后，将在图案的下方露出的硬掩模220去除。由此，如图5的(c)所示，在硬掩模220形成具有开口的图案230。
当图案形成装置102中进行的图案230的形成完成时，控制装置108控制搬送装置106来将基板W从图案形成装置102搬送至蚀刻装置103。
在步骤S4中，控制装置108控制蚀刻装置103，来经由基板W的硬掩模220的具有开口的图案230进行对象膜210的蚀刻。由此，如图5的(d)所示，在对象膜210形成沟、槽、孔等特征构造240。在此，硬掩模220(第一膜221、第二膜222)相对于对象膜210而言具有相对高的蚀刻选择性。即，硬掩模220相对于对象膜210的选择比大于1。由此，能够在对象膜210形成深宽比高的特征构造240。
当完成蚀刻装置103中进行的蚀刻处理时，控制装置108控制搬送装置107来将基板W从蚀刻装置103搬送至灰化装置104。
在步骤S5中，控制装置108控制灰化装置104来将基板W的硬掩模220进行灰化。
在此，灰化装置104具备将载置于处理空间内的基板W进行加热的加热器。加热器将基板W加热至规定温度(例如Ru3(CO)12的升华温度以上且Ru3(CO)12的热分解温度以下)。另外，灰化装置104具备产生氧等离子体的等离子体发生装置。等离子体发生装置在载置基板W的处理空间内产生氧等离子体。由此，如以下的化学式那样，作为第一膜221的DLC膜通过氧等离子体而灰化。此外，在以下的化学式中，“↑”表示气体。
C+O*→CO↑
另外，如以下的化学式所示那样，作为第二膜222的Ru膜通过在将DLC膜进行灰化时生成的CO而灰化。此外，为了促进Ru膜的灰化，可以向灰化装置104的处理空间供给CO气体。
3Ru+12CO→Ru3(CO)12↑
像这样，灰化装置104能够通过基于氧等离子体的灰化将层叠后的第一膜221和第二膜222这两方去除。
当灰化装置104中进行的硬掩模220的去除完成时，控制装置108控制搬送装置107来排出基板W。
根据以上的本实施方式所涉及的基板处理系统100，将具有压缩应力的DLC膜(第一膜221)和具有拉伸应力的Ru膜(第二膜222)进行层叠来形成硬掩模220，由此能够控制硬掩模220的应力。例如，相比于仅通过DLC膜来形成硬掩模的情况，能够降低硬掩模220的应力。
图8是参考例所涉及的形成有硬掩模的基板W的截面示意图。参考例所涉及的硬掩模仅通过DLC膜250形成。如图8所示，由于DLC膜250的压缩应力，在基板W产生翘曲。由于该基板W的翘曲，例如在步骤S3内的光刻工序中可能会发生失焦。因此，可能得不到期望的图案。与此相对地，根据本实施方式所涉及的硬掩模形成装置101，例如能够形成应力小的硬掩模220。由此，能够抑制基板W的翘曲来在光刻工序中适当地聚焦。即，能够在硬掩模220形成微细的图案230。
另外，在步骤S21～S23所示的第一膜221和第二膜222的成膜中，优选在基板W的温度为相同温度的情况下进行成膜。由此，能够消除基板W的升温/降温时间，因此能够提高硬掩模220的生产率。
另外，优选的是，步骤S21中进行的第一膜221的成膜时的基板W的温度和步骤S22中进行的第二膜222的成膜时的基板W的温度为相同的温度。基板W的温度控制的响应性比其它响应性(例如处理空间26内的压力控制的响应性、气体切换的响应性)慢，因此，当步骤S21和步骤S22中的基板W的温度不同时，进行硬掩模220的层叠时的需要时间增加。与此相对地，在本实施方式中，在碳膜(第一膜221)的成膜中使用CH4/H2，在Ru膜(第二膜222)的成膜中使用Ru3(CO)12，由此能够在将基板W的温度固定为200℃的情况下进行第一膜221和第二膜222的成膜。由此，能够使硬掩模220的生产率提高。
另外，在将硬掩模220进行灰化时，能够通过氧等离子体将第一膜221和第二膜222这两方进行灰化。由于第二膜222的金属成分(Ru)也能够灰化，因此能够从基板W适当地去除金属成分(Ru)。
此外，优选硬掩模220的最上层的膜为碳膜(第一膜221)。由此，例如即使在利用搬送装置105～107在大气气氛下搬送基板W的情况下，也能够防止作为金属膜的Ru膜(第二膜222)的自然氧化。
此外，优选硬掩模220的最下层的膜为具有压缩应力的第一膜221(碳膜)。与对象膜210直接接触的第一膜221具有压缩应力，由此能够提高对象膜210与第一膜221的密合性。由此，能够防止硬掩模220的膜剥离。
此外，优选硬掩模220的最下层的膜为碳膜(第一膜221)。由此，作为金属膜的Ru膜(第二膜222)不在对象膜210直接成膜，在灰化(步骤S5)时，能够减少对象膜210上的杂质的残留。
此外，设是通过等离子体CVD工艺进行碳膜(第一膜221)的成膜来进行了说明，但并不限定于此，也可以通过热CVD工艺、PVD(Physical Vapor Deposition：物理气相沉积)工艺进行成膜。另外，设是通过热CVD工艺进行Ru膜(第二膜222)的成膜来进行了说明，但并不限定于此，也可以通过等离子体CVD工艺、PVD工艺进行成膜。
关于第一膜221的气体，以含碳气体(例如CH4、C2H2、C2H4、C3H6等)为例进行了说明，但并不限定于此。例如，也可以使用C7H8等芳香烃、CxHy(x＝1以上且10以下，y＝2以上)。
以Ru3(CO)12为例说明了第二膜222的前体，但并不限于此。含Ru气体例如可以使用(2,4二甲基戊二烯基)(乙基环戊二烯基)钌：(Ru(DMPD)(EtCp))、双(2,4-二甲基戊二烯基)钌：(Ru(DMPD)2)、(4-二甲基戊二烯基)(甲基环戊二烯基)钌)：Ru(DMPD)(MeCp))、双(环戊二烯基)钌：(Ru(C5H5)2)、顺二羰基双(5-甲基己烷-2,4-二酸酯)钌(II)：Ru(DMBD)(CO)3。另外，含Ru气体也可以包含杂质(例如P)。在进行灰化(步骤S5)时，在由于含Ru气体中包含的杂质(例如P)而残留有残渣的情况下，除了基于O2的灰化以外，还追加清洁处理。在清洁处理中，例如供给ClF3、O3来作为气体，通过O2等离子体来去除残渣。另外，还可以利用H等离子体进行处理。
以上对基板处理系统100的实施方式等进行了说明，但本公开并不限定于上述实施方式等，在权利要求书所记载的本公开的主旨的范围内能够进行各种变形、改进。
基板处理系统100可以为在真空气氛下搬送基板W的Insitu系统，也可以为在大气气氛下搬送基板W的Exsitu系统，但并无限定。
设是硬掩模形成装置101在一个处理容器20中进行第一膜221和第二膜222的成膜来进行了说明，但并不限于此，也可以分别单独设置进行第一膜221的成膜的处理容器和进行第二膜222的成膜的处理容器。
另外，设是硬掩模220为将具有压缩应力的碳膜(第一膜221)和具有拉伸应力的Ru膜(第二膜222)交替地层叠而成的硬掩模来进行了说明，但并不限于此。可以将向硬掩模提供压缩应力的第一原料气体(含碳气体)和向硬掩模提供拉伸应力的第二原料气体(含Ru气体)以按规定的比率进行混合，使用混合后的原料气体来进行硬掩模的成膜。另外，第一原料气体与第二原料气体的混合气体中的第一原料气体的浓度比可以设为0.1％至100％。此外，当考虑材料成本时，含Ru气体比含碳气体价格高，因此优选混合气体中的第一原料气体的浓度比低。

Claims (23)

1.一种硬掩模，形成于在基板形成的对象膜之上，
所述硬掩模是将一个以上的具有第一方向的应力的第一膜和一个以上的具有与所述第一方向相反的第二方向的应力的第二膜交替地层叠而成的硬掩模。
2.根据权利要求1所述的硬掩模，其特征在于，
所述硬掩模相对于所述对象膜的选择比大于1。
3.根据权利要求1或2所述的硬掩模，其特征在于，
所述第一膜具有压缩应力，
所述第二膜具有拉伸应力。
4.根据权利要求1至3中的任一项所述的硬掩模，其特征在于，
所述第一膜为碳膜，
所述第二膜为钌膜。
5.根据权利要求4所述的硬掩模，其特征在于，
交替地层叠后的所述第一膜和所述第二膜中的最上层的膜为所述第一膜。
6.根据权利要求3至5中的任一项所述的硬掩模，其特征在于，
交替地层叠后的所述第一膜和所述第二膜中的最下层的膜为所述第一膜。
7.根据权利要求1至6中的任一项所述的硬掩模，其特征在于，
所述第一膜和所述第二膜构成为能够通过利用氧等离子体进行的灰化被从所述基板去除。
8.一种基板处理方法，包括以下工序：
准备形成有对象膜的基板；
在所述基板进行具有第一方向的应力的第一膜的成膜；
在所述基板进行具有与所述第一方向相反的第二方向的应力的第二膜的成膜；以及
重复进行所述第一膜的成膜的工序和进行所述第二膜的成膜的工序，来形成硬掩模。
9.根据权利要求8所述的基板处理方法，其特征在于，
所述硬掩模相对于所述对象膜的选择比大于1。
10.根据权利要求8或9所述的基板处理方法，其特征在于，
所述第一膜具有压缩应力，
所述第二膜具有拉伸应力。
11.根据权利要求8至10中的任一项所述的基板处理方法，其特征在于，
所述第一膜为碳膜，
所述第二膜为钌膜。
12.根据权利要求11所述的基板处理方法，其特征在于，
交替地层叠后的所述第一膜和所述第二膜中的最上层的膜为所述第一膜。
13.根据权利要求10至12中的任一项所述的基板处理方法，其特征在于，
交替地层叠后的所述第一膜和所述第二膜中的最下层的膜为所述第一膜。
14.根据权利要求8至13中的任一项所述的基板处理方法，其特征在于，
进行所述第一膜的成膜的工序中的所述基板的温度与进行所述第二膜的成膜的工序中的所述基板的温度为相同的温度。
15.根据权利要求8至14中的任一项所述的基板处理方法，其特征在于，
还包括通过利用氧等离子体进行的灰化来从所述基板去除所述第一膜和所述第二膜的工序。
16.一种基板处理装置，具备：
载置台，其载置基板；
处理容器，其收容所述载置台；
第一气体供给系统，其向所述处理容器供给第一气体；
第二气体供给系统，其向所述处理容器供给第二气体；以及
控制装置，
其中，所述控制装置执行以下工序：
准备形成有对象膜的所述基板；
在所述基板进行具有第一方向的应力的第一膜的成膜；
在所述基板进行具有与所述第一方向相反的第二方向的应力的第二膜的成膜；以及
重复进行所述第一膜的成膜的工序和进行所述第二膜的成膜的工序来形成硬掩模。
17.根据权利要求16所述的基板处理装置，其特征在于，
所述硬掩模相对于所述对象膜的选择比大于1。
18.根据权利要求16或17所述的基板处理装置，其特征在于，
进行所述第一膜的成膜的工序和进行所述第二膜的成膜的工序在一个所述处理容器中进行处理。
19.根据权利要求16至18中的任一项所述的基板处理装置，其特征在于，
所述第一膜具有压缩应力，
所述第二膜具有拉伸应力。
20.根据权利要求16至19中的任一项所述的基板处理装置，其特征在于，
所述第一膜为碳膜，
所述第二膜为钌膜。
21.一种硬掩模，形成于在基板形成的对象膜之上，
所述硬掩模是通过将第一原料气体与第二原料气体以规定的比率进行混合并使用混合后的原料气体进行成膜所得到的硬掩模，其中，所述第一原料气体向所述硬掩模提供第一方向的应力，所述第二原料气体向所述硬掩模提供与所述第一方向相反的第二方向的应力。
22.根据权利要求21所述的硬掩模，其特征在于，
所述硬掩模相对于所述对象膜的选择比大于1。
23.根据权利要求21或22所述的硬掩模，其特征在于，
所述第一原料气体含有碳，
所述第二原料气体含有钌。
CN202010413378.XA 2019-05-23 2020-05-15 硬掩模、基板处理方法以及基板处理装置 Pending CN111986990A (zh)

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