CN1119826C - 磁性微型开关及其制造方法 - Google Patents

磁性微型开关及其制造方法 Download PDF

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Publication number
CN1119826C
CN1119826C CN98107465A CN98107465A CN1119826C CN 1119826 C CN1119826 C CN 1119826C CN 98107465 A CN98107465 A CN 98107465A CN 98107465 A CN98107465 A CN 98107465A CN 1119826 C CN1119826 C CN 1119826C
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CN
China
Prior art keywords
reed
microswitch
magnetic field
substrate
length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN98107465A
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English (en)
Chinese (zh)
Other versions
CN1198581A (zh
Inventor
F·古埃沙兹
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Asulab AG
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Asulab AG
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Publication date
Application filed by Asulab AG filed Critical Asulab AG
Publication of CN1198581A publication Critical patent/CN1198581A/zh
Application granted granted Critical
Publication of CN1119826C publication Critical patent/CN1119826C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/50—Means for increasing contact pressure, preventing vibration of contacts, holding contacts together after engagement, or biasing contacts to the open position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H36/00—Switches actuated by change of magnetic field or of electric field, e.g. by change of relative position of magnet and switch, by shielding
    • H01H2036/0093—Micromechanical switches actuated by a change of the magnetic field

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Switches That Are Operated By Magnetic Or Electric Fields (AREA)
  • Manufacture Of Switches (AREA)
  • Contacts (AREA)
  • Micromachines (AREA)
CN98107465A 1997-04-21 1998-04-20 磁性微型开关及其制造方法 Expired - Fee Related CN1119826C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CH919/1997 1997-04-21
CH919/97 1997-04-21
CH00919/97A CH691559A5 (fr) 1997-04-21 1997-04-21 Micro-contacteur magnétique et son procédé de fabrication.

Publications (2)

Publication Number Publication Date
CN1198581A CN1198581A (zh) 1998-11-11
CN1119826C true CN1119826C (zh) 2003-08-27

Family

ID=4198229

Family Applications (1)

Application Number Title Priority Date Filing Date
CN98107465A Expired - Fee Related CN1119826C (zh) 1997-04-21 1998-04-20 磁性微型开关及其制造方法

Country Status (6)

Country Link
US (1) US6040748A (enExample)
JP (1) JP4205202B2 (enExample)
KR (1) KR100507950B1 (enExample)
CN (1) CN1119826C (enExample)
CH (1) CH691559A5 (enExample)
TW (1) TW412767B (enExample)

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US6728023B1 (en) 2002-05-28 2004-04-27 Silicon Light Machines Optical device arrays with optimized image resolution
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US7054515B1 (en) 2002-05-30 2006-05-30 Silicon Light Machines Corporation Diffractive light modulator-based dynamic equalizer with integrated spectral monitor
US6822797B1 (en) 2002-05-31 2004-11-23 Silicon Light Machines, Inc. Light modulator structure for producing high-contrast operation using zero-order light
US6829258B1 (en) 2002-06-26 2004-12-07 Silicon Light Machines, Inc. Rapidly tunable external cavity laser
US6908201B2 (en) 2002-06-28 2005-06-21 Silicon Light Machines Corporation Micro-support structures
US6813059B2 (en) 2002-06-28 2004-11-02 Silicon Light Machines, Inc. Reduced formation of asperities in contact micro-structures
US6714337B1 (en) 2002-06-28 2004-03-30 Silicon Light Machines Method and device for modulating a light beam and having an improved gamma response
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US6801354B1 (en) 2002-08-20 2004-10-05 Silicon Light Machines, Inc. 2-D diffraction grating for substantially eliminating polarization dependent losses
US6712480B1 (en) 2002-09-27 2004-03-30 Silicon Light Machines Controlled curvature of stressed micro-structures
US6928207B1 (en) 2002-12-12 2005-08-09 Silicon Light Machines Corporation Apparatus for selectively blocking WDM channels
US7057819B1 (en) 2002-12-17 2006-06-06 Silicon Light Machines Corporation High contrast tilting ribbon blazed grating
US6987600B1 (en) 2002-12-17 2006-01-17 Silicon Light Machines Corporation Arbitrary phase profile for better equalization in dynamic gain equalizer
US6934070B1 (en) 2002-12-18 2005-08-23 Silicon Light Machines Corporation Chirped optical MEM device
US6927891B1 (en) 2002-12-23 2005-08-09 Silicon Light Machines Corporation Tilt-able grating plane for improved crosstalk in 1×N blaze switches
US7068372B1 (en) 2003-01-28 2006-06-27 Silicon Light Machines Corporation MEMS interferometer-based reconfigurable optical add-and-drop multiplexor
US7286764B1 (en) 2003-02-03 2007-10-23 Silicon Light Machines Corporation Reconfigurable modulator-based optical add-and-drop multiplexer
US6947613B1 (en) 2003-02-11 2005-09-20 Silicon Light Machines Corporation Wavelength selective switch and equalizer
US6922272B1 (en) 2003-02-14 2005-07-26 Silicon Light Machines Corporation Method and apparatus for leveling thermal stress variations in multi-layer MEMS devices
US7027202B1 (en) 2003-02-28 2006-04-11 Silicon Light Machines Corp Silicon substrate as a light modulator sacrificial layer
US6806997B1 (en) 2003-02-28 2004-10-19 Silicon Light Machines, Inc. Patterned diffractive light modulator ribbon for PDL reduction
US6922273B1 (en) 2003-02-28 2005-07-26 Silicon Light Machines Corporation PDL mitigation structure for diffractive MEMS and gratings
US6829077B1 (en) 2003-02-28 2004-12-07 Silicon Light Machines, Inc. Diffractive light modulator with dynamically rotatable diffraction plane
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US8665041B2 (en) * 2008-03-20 2014-03-04 Ht Microanalytical, Inc. Integrated microminiature relay
US8581679B2 (en) * 2010-02-26 2013-11-12 Stmicroelectronics Asia Pacific Pte. Ltd. Switch with increased magnetic sensitivity
KR101712628B1 (ko) * 2010-05-03 2017-03-06 삼성전자 주식회사 가변 콘택을 포함한 반도체 소자
FR2970111B1 (fr) * 2011-01-03 2013-01-11 Commissariat Energie Atomique Procede de fabrication d'un micro-contacteur actionnable par un champ magnetique
FR2970596B1 (fr) 2011-01-19 2013-02-08 Commissariat Energie Atomique Contacteur et interrupteur
US9972459B1 (en) 2013-09-09 2018-05-15 Apple Inc. Tactile switch assembly in an electronic device
US10109432B1 (en) * 2014-06-16 2018-10-23 Apple Inc. Switch assemblies
RU2629002C2 (ru) * 2015-12-28 2017-08-24 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Рязанский государственный радиотехнический университет" Способ увеличения чувствительности магнитоуправляемых коммутаторов
DE102016210485A1 (de) * 2016-06-14 2017-12-14 Siemens Aktiengesellschaft Elektromechanisches Schutzschaltgerät mit einer Überlastauslöseeinrichtung
US10707032B1 (en) 2016-12-02 2020-07-07 Apple Inc. Electronic device having travel-magnifying input/output structure
CN111915997A (zh) * 2020-08-19 2020-11-10 深圳市奥拓电子股份有限公司 一种具有触摸功能的cob显示模组及led显示屏

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US5726480A (en) * 1995-01-27 1998-03-10 The Regents Of The University Of California Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same

Also Published As

Publication number Publication date
JP4205202B2 (ja) 2009-01-07
JPH10321102A (ja) 1998-12-04
CH691559A5 (fr) 2001-08-15
KR100507950B1 (ko) 2005-11-08
CN1198581A (zh) 1998-11-11
TW412767B (en) 2000-11-21
KR19980081539A (ko) 1998-11-25
US6040748A (en) 2000-03-21

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