CN111916428A - Plating layer windowing structure and process method thereof - Google Patents

Plating layer windowing structure and process method thereof Download PDF

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Publication number
CN111916428A
CN111916428A CN202010590098.6A CN202010590098A CN111916428A CN 111916428 A CN111916428 A CN 111916428A CN 202010590098 A CN202010590098 A CN 202010590098A CN 111916428 A CN111916428 A CN 111916428A
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Prior art keywords
substrate
plastic packaging
grid groove
packaging material
plating layer
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Pending
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CN202010590098.6A
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Chinese (zh)
Inventor
邢发军
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JCET Group Co Ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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Application filed by Jiangsu Changjiang Electronics Technology Co Ltd filed Critical Jiangsu Changjiang Electronics Technology Co Ltd
Priority to CN202010590098.6A priority Critical patent/CN111916428A/en
Publication of CN111916428A publication Critical patent/CN111916428A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
    • B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
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Abstract

The invention relates to a plating layer windowing structure and a process method, wherein the structure comprises a substrate (1), a signal transmitter (2) and a device (3) are arranged on the substrate (1), plastic packaging materials (4) are encapsulated at the peripheries of the signal transmitter (2) and the device (3), a grid groove structure (8) is arranged on the surface of the plastic packaging material (4) above the signal transmitter (2), and a sputtering plating layer (5) is arranged on the surface of the plastic packaging material (4) in other areas except the grid groove structure (8). The invention relates to a plating layer windowing structure and a process method thereof, which can solve the problems of poor operability, residual glue, plating layer scraps and the like caused by coating and windowing a specific area by covering a high-temperature glue.

Description

Plating layer windowing structure and process method thereof
Technical Field
The invention relates to a plating windowing structure and a process method thereof, belonging to the technical field of semiconductor packaging.
Background
The traditional method for windowing the magnetron sputtering coating in the specific area comprises the following steps:
1. taking a high-temperature resistant adhesive tape, punching the high-temperature resistant adhesive tape into a sheet in a longitudinal mode by utilizing a mechanical up-down prop punching technology, and then sticking the adhesive tape to a position needing to open a window (see figure 1);
2. and (3) putting the product pasted with the high-temperature adhesive tape into a magnetron sputtering machine for coating operation, wherein continuous coating is generally formed in the magnetron sputtering operation, and the top of the high-temperature adhesive tape is covered with a coating.
3. And tearing off the high-temperature adhesive tape on the surface of the sputtered product, and preparing a plating layer window in the area covered by the high-temperature adhesive tape (see figure 2).
The defects of the traditional process method are as follows:
1. the high-temperature adhesive tape has poor dimensional stability in the physical punching process, the punched adhesive tape has poor dimensional precision, and the cut edge has adhesive drawn wires, which affects the subsequent operation;
2. the punched high-temperature adhesive tape with a specific size needs to be attached to a windowing position of a specified plating layer, the precision of the position where the high-temperature adhesive tape is attached to the surface of a product is poor, and wrinkles are easy to appear;
3. after sputtering, the high-temperature adhesive tape needs to be torn off, no force application point exists, and the high-temperature adhesive tape is difficult to tear off;
4. after the adhesive tape is torn off, adhesive residue and plating scraps are easy to appear in the area of the adhesive tape, and the appearance and the performance of a product are affected.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a plating layer windowing structure and a process method thereof aiming at the prior art, and the plating layer windowing structure can solve the problems of poor operability, residual glue, plating layer chipping and the like caused by traditional window windowing of a specific area by covering high-temperature glue.
The technical scheme adopted by the invention for solving the problems is as follows: a plating layer windowing structure comprises a substrate, wherein a signal transmitter and a device are arranged on the substrate, a plastic packaging material is encapsulated at the periphery of the signal transmitter and the device, a grid groove structure is formed in the surface of the plastic packaging material above the signal transmitter, a sputtering plating layer is arranged on the upper surface of the plastic packaging material, the side surface of the plastic packaging material and the side surface of the substrate, and the sputtering plating layer is a discontinuous plating layer in the area of the grid groove structure.
Optionally, the distance from the upper surface of the signal emitting device to the upper surface of the molding compound is greater than 150 um.
Optionally, the grid groove structure comprises a plurality of grooves, the grooves are arranged in parallel, and the distance range between two adjacent grooves is larger than 10 um.
Optionally, the ratio of the depth to the width of the groove is greater than 5: 1.
Optionally, the depth range of the groove is 50 um-500 um, and the width range is 10 um-100 um.
A process for coating a fenestration structure, the process comprising the steps of:
step one, taking a substrate which is sealed in a plastic package;
secondly, optically positioning the position needing to be windowed;
thirdly, forming a grid groove structure on the upper surface of the plastic packaging material by using laser;
fourthly, cleaning dust in the dug grid groove structure;
step five, cutting the substrate, and carrying out magnetron sputtering on the upper surface and the side surface of the cut unit product to form a sputtering coating, wherein the sputtering coating is in a continuous state on the flat surface of the plastic packaging material and is in a discontinuous state on the upper surface of the grid groove structure;
and step six, taking down the sputtered product.
Optionally, in the step one, the device and the signal emitting device are attached to the upper surface of the substrate, the upper surface of the substrate is subjected to plastic package, and the device and the signal emitting device are wrapped by a plastic package material.
Optionally, in the fourth step, the dust in the grid groove is removed by using a high-speed airflow or a dry ice cleaning method.
Compared with the prior art, the invention has the advantages that:
1. according to the invention, through the process of laser grid groove digging, the high-temperature adhesive tape is not needed for pasting and shielding operation, and the film coating and windowing effects can be achieved;
2. the laser grid groove windowing process adopts an optical positioning method, the position accuracy of the grid groove is high, the laser processing area is not limited by the windowing outline, and grid groove windowing with any outline and any size can be prepared;
3. the laser grid groove windowing does not need to use an adhesive tape to shield the plating layer, so that the situation of difficult glue tearing operation does not exist, the preparation process is simple, and the production efficiency is high;
4. the laser grid groove windowing device does not have the side effects of residual glue caused by adhesive tape sticking and plating layer scraps caused by adhesive tearing, and is better in appearance and quality.
Drawings
FIG. 1 is a schematic view illustrating a conventional method for opening a window by magnetron sputtering coating in a specific area to attach an adhesive tape to a specific position of the window by magnetron sputtering coating.
FIG. 2 is a schematic diagram of a magnetron sputtering coating windowing prepared in a high-temperature adhesive tape covered area by a traditional magnetron sputtering coating windowing method in a specific area.
FIG. 3 is a schematic view of a window structure of a plating layer according to the present invention.
Fig. 4 is a top view of fig. 3.
Wherein:
substrate 1
Signal emitter 2
Device 3
Plastic package material 4
Sputter coating 5
High temperature adhesive tape 6
Coating windowing 7
A gate trench structure 8.
Detailed Description
The invention is described in further detail below with reference to the accompanying examples.
As shown in fig. 3 and 4, the plating layer windowing structure according to the present invention includes a substrate 1, a signal transmitter 2 and a device 3 are disposed on the substrate 1, a plastic package material 4 is encapsulated at peripheries of the signal transmitter 2 and the device 3, a gate groove structure 8 is disposed on a surface of the plastic package material 4 vertically above the signal transmitter 2, a sputtering plating layer 5 is disposed on an upper surface of the plastic package material 4, a side surface of the plastic package material 4 and a side surface of the substrate 1, and the sputtering plating layer 5 is a discontinuous plating layer in a region of the gate groove structure 8.
The process method comprises the following steps:
step one, taking a substrate which is sealed in a plastic package;
taking a substrate, pasting a device and a signal emitting device on the upper surface of the substrate, carrying out plastic package on the upper surface of the substrate, and wrapping the device and the signal emitting device by using a plastic package material, wherein the distance from the upper surface of the signal emitting device to the upper surface of the plastic package material is more than 150 micrometers, so that a laser grid digging groove in the subsequent step III is facilitated;
secondly, optically positioning the position of the window on the substrate;
an optical recognition system of the laser device scans the substrate alignment point to recognize the position of the area to be processed, so that the three steps of accurate processing are facilitated;
thirdly, performing laser grid groove digging on the plastic packaging material by using laser;
on the substrate which is optically positioned in the second step, a laser device is utilized to dig a groove on the corresponding plastic package material vertically above the signal transmitter, and a grid groove structure with a specific line width and a groove depth is dug;
the area of the grid groove structure is larger than 200 multiplied by 200 um;
the grid groove structure is formed by a plurality of grooves, the distance between every two adjacent grooves is larger than 10um, and the specially designed structure is beneficial to windowing of a coating in the subsequent step five;
the ratio of the depth to the width of the groove is greater than 5: 1;
the depth range of the groove is 50 um-500 um, and the width range is 10 um-100 um;
fourthly, cleaning dust in the grid groove dug by the laser;
the principle of laser grooving is that the plastic packaging material is subjected to organizational structure damage by utilizing the molecular bonding damage and the thermal effect of laser on the material to form a groove, and dust generated in the grooving process blocks the groove, so that after the grid groove is dug by the laser in the third step, the dust in the groove needs to be cleaned and removed, and the dust in the grid groove is generally removed by utilizing methods such as high-speed airflow and dry ice cleaning;
fifthly, carrying out magnetron sputtering;
the method comprises the steps of cutting a substrate plastic package body, sputtering a layer of sputtering coating on the upper surface and the side surface of a product by utilizing a magnetron sputtering PVD process, wherein the layer of sputtering coating is in a continuous state on the flat surface of the plastic package material, but in a special surface structure of a grid groove, the sputtering coating is in a discontinuous state in the area due to the influence of a shielding effect in the area of the grid groove. The discontinuous plating layer formed due to the influence of the specific structure of the grid groove forms a windowing structure of the magnetron sputtering plating layer, so that an internal signal emitter can conveniently emit signals to the outside;
and step six, taking down the sputtered substrate and putting the substrate into a tray.
In addition, the present invention also includes other embodiments, and any technical solutions formed by equivalent transformation or equivalent replacement should fall within the protection scope of the claims of the present invention.

Claims (8)

1. A plating layer windowing structure is characterized in that: the novel plastic packaging structure comprises a substrate (1), wherein a signal transmitter (2) and a device (3) are arranged on the substrate (1), a plastic packaging material (4) is packaged on the peripheries of the signal transmitter (2) and the device (3), a grid groove structure (8) is formed in the surface of the plastic packaging material (4) above the signal transmitter (2), a sputtering coating (5) is arranged on the upper surface of the plastic packaging material (4), the side surfaces of the plastic packaging material (4) and the substrate (1), and the sputtering coating (5) is a discontinuous coating in the area of the grid groove structure (8).
2. The structure of claim 1, wherein: the distance from the upper surface of the signal transmitting device (2) to the upper surface of the plastic packaging material (4) is larger than 150 um.
3. The structure of claim 1, wherein: the grid groove structure (8) is composed of a plurality of grooves which are arranged in parallel, and the distance range between every two adjacent grooves is larger than 10 um.
4. A coated fenestration structure according to claim 3 wherein: the ratio of the depth to the width of the groove is greater than 5: 1.
5. A coated fenestration structure according to claim 3 wherein: the depth range of the groove is 50 um-500 um, and the width range is 10 um-100 um.
6. A process method of a plating windowing structure is characterized by comprising the following steps:
step one, taking a substrate which is sealed in a plastic package;
secondly, optically positioning the position needing to be windowed;
thirdly, forming a grid groove structure on the upper surface of the positioned plastic packaging material by using laser;
fourthly, cleaning dust in the dug grid groove structure;
step five, cutting the substrate, and forming a sputtering coating on the upper surface and the side surface of the cut unit product, wherein the sputtering coating is in a continuous state on the flat surface of the plastic packaging layer, and is in a discontinuous state on the upper surface of the gate groove structure;
and step six, taking down the product after sputtering.
7. The process of claim 6, wherein the process comprises: and step one, carrying a magnetron sputtering electromagnetic shielding process on a substrate, wherein a signal emitting device and a device are arranged on the substrate, and the peripheries of the signal generator and the device are wrapped by a plastic package material.
8. The process of claim 6, wherein the process comprises: and in the fourth step, the dust in the grid groove structure is removed by using a high-speed airflow or dry ice cleaning method.
CN202010590098.6A 2020-06-24 2020-06-24 Plating layer windowing structure and process method thereof Pending CN111916428A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114334913A (en) * 2021-12-09 2022-04-12 江苏长电科技股份有限公司 Coating structure and manufacturing method

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CN201729871U (en) * 2010-06-17 2011-02-02 北京清华阳光能源开发有限责任公司 Shielding device of magnetically-controlled sputtering target
CN102760590A (en) * 2011-04-29 2012-10-31 光宝新加坡有限公司 Proximity sensor
KR20170013510A (en) * 2015-07-28 2017-02-07 (주)포인트엔지니어링 Method for chip substrate and chip package
KR20170047039A (en) * 2015-10-22 2017-05-04 (주)파트론 Optical sensor package and manufacturing method thereof
US20170263569A1 (en) * 2016-03-10 2017-09-14 Apple Inc. System-in-Package Devices With Magnetic Shielding
US20180358303A1 (en) * 2017-06-08 2018-12-13 Futurewei Technologies, Inc. Wrapped signal shielding in a wafer fanout package
CN109216297A (en) * 2018-08-02 2019-01-15 江苏长电科技股份有限公司 It is a kind of selectively to carry on the back golden chip-packaging structure and its process
KR102112620B1 (en) * 2019-11-18 2020-05-19 제너셈(주) Emi shielding method and protection tape sticking apparatus applied for the same

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201729871U (en) * 2010-06-17 2011-02-02 北京清华阳光能源开发有限责任公司 Shielding device of magnetically-controlled sputtering target
CN102760590A (en) * 2011-04-29 2012-10-31 光宝新加坡有限公司 Proximity sensor
KR20170013510A (en) * 2015-07-28 2017-02-07 (주)포인트엔지니어링 Method for chip substrate and chip package
KR20170047039A (en) * 2015-10-22 2017-05-04 (주)파트론 Optical sensor package and manufacturing method thereof
US20170263569A1 (en) * 2016-03-10 2017-09-14 Apple Inc. System-in-Package Devices With Magnetic Shielding
US20180358303A1 (en) * 2017-06-08 2018-12-13 Futurewei Technologies, Inc. Wrapped signal shielding in a wafer fanout package
CN109216297A (en) * 2018-08-02 2019-01-15 江苏长电科技股份有限公司 It is a kind of selectively to carry on the back golden chip-packaging structure and its process
KR102112620B1 (en) * 2019-11-18 2020-05-19 제너셈(주) Emi shielding method and protection tape sticking apparatus applied for the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114334913A (en) * 2021-12-09 2022-04-12 江苏长电科技股份有限公司 Coating structure and manufacturing method

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