CN201729871U - Shielding device of magnetically-controlled sputtering target - Google Patents
Shielding device of magnetically-controlled sputtering target Download PDFInfo
- Publication number
- CN201729871U CN201729871U CN2010202364847U CN201020236484U CN201729871U CN 201729871 U CN201729871 U CN 201729871U CN 2010202364847 U CN2010202364847 U CN 2010202364847U CN 201020236484 U CN201020236484 U CN 201020236484U CN 201729871 U CN201729871 U CN 201729871U
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- shielding unit
- sputtering target
- groove
- shielding device
- magnetron sputtering
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Abstract
The utility model provides a shielding device of a magnetically-controlled sputtering target. One end of the sputtering target is connected with a sputtering target seat; an insulating seal part is arranged between the sputtering target set and a flange plate; a through hole in the middle of the shielding device is sleeved with the sputtering target, so that the shielding device is resisted on the insulating seal part, and a gap is remained between the shielding device and the flange plate; the surface of the outer circumference of the shielding device is provided with at least one of grooves and at least one of lug bosses; and the end face of one end of the shielding device which is far away from the sputtering target seat is provide with at least one of grooves which are coaxial with the sputtering target. With the structure, the shielding device can completely solve the problem of the existing shielding structure. Even the a part of the shielding device is coated with the thicker coating, the coating on the shielding device is interrupted and can not form into the continuous coating structure due to the existence of the labyrinth type multi-groove structure, so that the arc discharge between the sputtering cathode and the flange plate (the grounding anode) can not be formed.
Description
Technical field
The utility model relates to vacuum coating technology, particularly a kind of magnetron sputtering target shielding unit.
Background technology
At present, magnetron sputtering coater sputtering target structure is developed to column rotary target structure direction gradually by early stage planar target structure, and has formed multiple column-shape magnetron sputtering target structure.The realization of column sputtering target has increased substantially target utilization, makes the structure of target also simple more, reliable simultaneously.A kind of rotary magnetic field planar target magnetic-controlled sputtering apparatus of mentioning as the patent CN200510021648.8 of the People's Republic of China (PRC), and the column-shape magnetron sputtering equipment mentioned of the patent CN200610062227.4 of the People's Republic of China (PRC), all adopted multi-form Style Columu Talget structure.In above-mentioned sputtering target, in order to reach the insulation between sputtering target negative electrode and the anode, except being provided with various seals, also must the various shielding units of design, cause failure of insulation between negative electrode and the anode to stop because of sputter coating.The shielding construction of existing column rotary target mainly is the gap shielding construction, as shown in Figure 1, between sputter cathode and ring flange (ground connection anode), designed a simple column Abschirmblech, sputtering target is in sputter procedure like this, owing to have the gap between Abschirmblech and the ring flange hole, therefore, can realize insulation between negative electrode and the ground connection anode.Another kind of structure has increased the ground plane of the structure of turning up as shown in Figure 2 on the architecture basics of Fig. 1, make shield effectiveness more effective.
Yet, find that in use there is following problem in said structure: Abschirmblech and ring flange surface also can be coated with and be covered with coating in long-term coating process, accumulation along with the plated film time, coat-thickness can increase, reduced the shielding gap between Abschirmblech and the ring flange gradually, little to a certain degree the time when the gap, will between sputtering target negative electrode and ring flange (ground connection anode), produce arc discharge, cause sputtering target insulation damage, even cause the damage of sputter target stand or shielding power supply.
Summary of the invention
The purpose of this utility model is to have proposed a kind of many groove structures of labyrinth type magnetron sputtering target shielding construction, this kind structure can solve the problem that existing shielding construction exists fully, even shielding unit top has applied thicker coating, but because the existence of the many groove structures of labyrinth type, make the coating on the shielding unit form interrupted shape, not all right formation continuous coating structure, thus arc-over between sputter cathode and the ring flange (ground connection anode) also can't be formed.Negative electrode of realizing and the thorough shielding between the anode.Simultaneously, the many groove structures of labyrinth type adopt movable assembly structure, when the column sputtering target need more renew target because of sputter consumption acquires a certain degree,, can install to again in the new sputter and use as long as simply shielding construction outside surface and trench portions top coat are processed and removed.
For reaching above-mentioned purpose, a kind of magnetron sputtering target shielding unit of the utility model, one end of sputtering target is connected with the sputter target stand, between sputter target stand and ring flange, insulating sealer is installed, shielding unit intermediary through hole and sputtering target socket-connect and make this shielding unit butt to this insulating sealer, leave the gap between this shielding unit and the ring flange; Wherein: on the external peripheral surface of this shielding unit, be provided with at least one groove and at least one boss.
Described magnetron sputtering target shielding unit, wherein, this groove is a rectangle or trapezoidal.
Described magnetron sputtering target shielding unit, wherein, this shielding unit is provided with the co-axial groove at least of this sputtering target away from the end face of an end of this sputter target stand.
Described magnetron sputtering target shielding unit, wherein, this groove is a rectangle or trapezoidal.
Described magnetron sputtering target shielding unit, wherein, the boss on this shielding unit can block the gap between this shielding unit and the ring flange fully.
Described magnetron sputtering target shielding unit, wherein, this shielding unit is provided with a positioning and locking hole, connects or be threaded by plug this shielding unit and this sputtering target are fixed.
Described magnetron sputtering target shielding unit, wherein, this shielding unit is provided with a delineation position locking screw thread near the external peripheral surface of an end of this insulating sealer, and this insulating sealer is provided with the screw thread with this positioning and locking threads engaged, makes shielding unit and this insulating sealer positioning and locking.Described magnetron sputtering target shielding unit, wherein, the width of the groove on this shielding unit and the degree of depth are between 0.1～30mm.
Described magnetron sputtering target shielding unit, wherein, the width of the groove on this shielding unit and the degree of depth are between 0.1～30mm.
Described magnetron sputtering target shielding unit, wherein, the size in this gap is between 0.1～30mm.
The beneficial effects of the utility model are: this kind structure can solve the problem that existing shielding construction exists fully, even shielding unit top has applied thicker coating, but because the existence of the many groove structures of labyrinth type, make the coating on the shielding unit form interrupted shape, not all right formation continuous coating structure, thus arc-over between sputter cathode and the ring flange (ground connection anode) also can't be formed.Negative electrode of realizing and the thorough shielding between the anode.Simultaneously, the many groove structures of labyrinth type adopt movable assembly structure, when the column sputtering target need more renew target because of sputter consumption acquires a certain degree,, can install to again in the new sputter and use as long as simply shielding construction outside surface and trench portions top coat are processed and removed.In addition, owing to adopt multiple tracks groove structure on the external peripheral surface of shielding unit and the end face, the wall thickness of shielding unit is thicker, therefore, compare, have better heat-resistant deforming ability with conventional shielding unit, and general shielding unit adopts resistant to elevated temperatures insulating material, generally can bear higher temperature.
Description of drawings
Fig. 1 is known sputtering target shielding construction;
Fig. 2 is the known sputtering target shielding construction that has the structure of turning up;
Fig. 3 is the utility model first embodiment labyrinth type rectangle groove sputtering target shielding unit;
Fig. 4 is the labyrinth type square type groove shielding unit among Fig. 3;
Fig. 5 is the utility model second embodiment labyrinth type trapezoidal groove shielding unit;
Fig. 6 is the utility model the 3rd embodiment labyrinth type gradient groove sputtering target shielding unit;
Fig. 7 is the insulating sealer that has the positioning and locking screw thread among Fig. 6;
Fig. 8 is the labyrinth type gradient groove shielding unit among Fig. 6.
Description of reference numerals: 1-ring flange; The 2-insulating sealer; 3-sputter target stand; The 4-sputtering target; The 5-shielding unit; The 51-through hole; The 6-shielding gap; The 7-groove; The 8-boss; The 9-groove; 10-positioning and locking hole; 11-positioning and locking screw thread, 12-positioning and locking screw thread.
Embodiment
As shown in Figure 3 and Figure 4, be the utility model first embodiment labyrinth type rectangle groove sputtering target shielding unit.One end of sputtering target (negative electrode) 4 is connected with sputter target stand 3, between sputter target stand 3 and ring flange (ground connection anode) 1, insulating sealer 2 is installed, to guarantee insulation, the sealing between ring flange 1 and the sputtering target 4, this sputtering target 4 is positioned on the axis of ring flange 1.The profile of shielding unit 5 is roughly round shape, and these shielding unit 5 intermediary through holes 51 socket-connect with sputtering target 4 and make these shielding unit 4 butts to this insulating sealer 2.In addition, this shielding unit 5 is provided with a positioning and locking hole 10, connects or be threaded by plug this shielding unit 5 is fixed with this sputtering target 4.Leave gap 6 between this shielding unit 5 and the ring flange 1, this gap 6 is preferably dimensioned to be between 0.1～30mm.
Be provided with at least one rectangle groove 7 and at least one rectangular boss 8 on the external peripheral surface of this shielding unit 5, the width of this groove 7 and the degree of depth are between 0.1～30mm.In sputter procedure, even coating on the surface-coated of the external peripheral surface of shielding unit 5 and ring flange 1, reduced the gap 6 between the two, even owing to blocked up coating causes overlap joint between the two, yet, because the external peripheral surface of shielding unit 5 has groove 7 and boss 8, make the internal surface of groove 7 still be difficult to be coated with and be covered with coating, thereby make that the coating on the external peripheral surface of shielding unit 5 is discontinuous, stop the top coat of shielding unit 5 and the connection between the ring flange 1, realized the thorough insulation between sputtering target (negative electrode) 4 and the ring flange (ground connection anode) 1.
In addition, be provided with on the end face of this shielding unit 5 away from an end of this sputter target stand 3 with this sputtering target 4 co-axial rectangular recess at least 9, the width of this groove 9 and the degree of depth are between 0.1～30mm.In the sputtering target coating process, the surface of labyrinth type rectangle groove shielding unit can be coated with and be covered with coating.But because the end face of this shielding unit 5 is provided with groove 9, making splash coating be difficult to fully internal surface with this groove 9 is coated with fully and is covered with, thereby formed the insulation of the external peripheral surface of sputtering target 4 and shielding unit 5, realized the insulation between sputtering target 4 (negative electrode) and the ring flange 1 (ground connection anode).
After sputter for some time, if when beginning thicker coating to occur in groove 7 on the shielding unit and the groove 9, can be when changing sputtering target material, shielding unit 5 is together disassembled, adopt the method for cleaning or mechanical workout, be scavenged into the coating of the outside surface (comprising groove 7 and groove 9 inside) of shielding unit 5, the shielding unit of ressembling on the sputtering target 45 is repeatedly utilized.
Because adopt multiple tracks groove structure on the external peripheral surface of shielding unit and the end face, the wall thickness of shielding unit 5 is thicker, therefore, compare with conventional shielding unit, have better heat-resistant deforming ability, and generally shielding unit adopts resistant to elevated temperatures insulating material, generally can bear higher temperature.
Fig. 5 is the utility model second embodiment labyrinth type trapezoidal groove shielding unit, the difference of itself and first embodiment is, the external peripheral surface of this shielding unit 5 is provided with at least one trapezoidal groove 7 and at least one trapezoid boss 8, the structure of shielding unit and first embodiment (Fig. 4) are relatively among second embodiment, trapezoidal groove 7 has stronger shielding characteristic, and promptly splash coating is more difficult forms continuous coating in flute surfaces.
In addition, on the external peripheral surface of this shielding unit 5, be provided with a delineation position locking screw thread 11 near an end of this insulating sealer 2, can be provided with the screw thread (Fig. 7) that matches with this positioning and locking screw thread 11 on this insulating sealer 2, and with shielding unit 5 and these insulating sealer 2 positioning and lockings.
Fig. 6, Fig. 7 and Fig. 8 are the utility model the 3rd embodiment labyrinth type gradient groove sputtering target shielding unit, the difference of itself and first embodiment is, this shielding unit 5 has at least one rectangle groove 7 and at least one bigger rectangular boss 8 away from an end of this insulating sealer 2, this bigger rectangular boss 8 can be blocked the gap between ring flange 1 and this shielding unit 5, the shielding effect that has further improved shielding unit fully.
The above person only, it only is preferred embodiment of the present utility model, when not limiting the scope that the utility model is implemented with this, so the change of numerical value or displacement of equivalent elements such as, or, all should still belong to the category that the utility model patent contains according to equalization variation and modification that the utility model claim is done.
Claims (10)
1. magnetron sputtering target shielding unit, one end of sputtering target is connected with the sputter target stand, between sputter target stand and ring flange, insulating sealer is installed, shielding unit intermediary through hole and sputtering target socket-connect and make this shielding unit butt to this insulating sealer, leave the gap between this shielding unit and the ring flange; It is characterized in that: on the external peripheral surface of this shielding unit, be provided with at least one groove and at least one boss.
2. magnetron sputtering target shielding unit according to claim 1 is characterized in that, this groove is a rectangle or trapezoidal.
3. magnetron sputtering target shielding unit according to claim 1 is characterized in that, this shielding unit is provided with the co-axial groove at least of this sputtering target away from the end face of an end of this sputter target stand.
4. magnetron sputtering target shielding unit according to claim 3 is characterized in that, this groove is a rectangle or trapezoidal.
5. magnetron sputtering target shielding unit according to claim 1 is characterized in that, the boss on this shielding unit can block the gap between this shielding unit and the ring flange fully.
6. magnetron sputtering target shielding unit according to claim 1 is characterized in that, this shielding unit is provided with a positioning and locking hole, connects or be threaded by plug this shielding unit and this sputtering target are fixed.
7. magnetron sputtering target shielding unit according to claim 1, it is characterized in that, this shielding unit is provided with a delineation position locking screw thread near the external peripheral surface of an end of this insulating sealer, this insulating sealer is provided with the screw thread with this positioning and locking threads engaged, makes shielding unit and this insulating sealer positioning and locking.
8. magnetron sputtering target shielding unit according to claim 1 is characterized in that the width of the groove on this shielding unit and the degree of depth are between 0.1～30mm.
9. magnetron sputtering target shielding unit according to claim 3 is characterized in that the width of the groove on this shielding unit and the degree of depth are between 0.1～30mm.
10. magnetron sputtering target shielding unit according to claim 1 is characterized in that the size in this gap is between 0.1～30mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202364847U CN201729871U (en) | 2010-06-17 | 2010-06-17 | Shielding device of magnetically-controlled sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202364847U CN201729871U (en) | 2010-06-17 | 2010-06-17 | Shielding device of magnetically-controlled sputtering target |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201729871U true CN201729871U (en) | 2011-02-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010202364847U Expired - Fee Related CN201729871U (en) | 2010-06-17 | 2010-06-17 | Shielding device of magnetically-controlled sputtering target |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201729871U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105525269A (en) * | 2016-02-16 | 2016-04-27 | 京东方科技集团股份有限公司 | Magnetron sputtering device |
| CN109554675A (en) * | 2018-11-30 | 2019-04-02 | 深圳市华星光电技术有限公司 | Protection cap and sputtering equipment |
| CN112663003A (en) * | 2019-10-16 | 2021-04-16 | 株式会社爱发科 | Sputtering device |
-
2010
- 2010-06-17 CN CN2010202364847U patent/CN201729871U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105525269A (en) * | 2016-02-16 | 2016-04-27 | 京东方科技集团股份有限公司 | Magnetron sputtering device |
| CN109554675A (en) * | 2018-11-30 | 2019-04-02 | 深圳市华星光电技术有限公司 | Protection cap and sputtering equipment |
| CN112663003A (en) * | 2019-10-16 | 2021-04-16 | 株式会社爱发科 | Sputtering device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110202 Termination date: 20160617 |