CN209215617U - A kind of improvement stress type filtering chip architecture and wavelength division multiplexer - Google Patents
A kind of improvement stress type filtering chip architecture and wavelength division multiplexer Download PDFInfo
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- CN209215617U CN209215617U CN201920063605.3U CN201920063605U CN209215617U CN 209215617 U CN209215617 U CN 209215617U CN 201920063605 U CN201920063605 U CN 201920063605U CN 209215617 U CN209215617 U CN 209215617U
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- thin film
- film layer
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- cutting groove
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Abstract
The utility model provides a kind of improvement stress type filtering chip architecture, belong to optical-fibre communications field, including matrix, matrix is equipped with optical thin film layer, optical thin film layer is equipped at least one cutting groove, optical thin film layer is divided at least two free standing film areas, the depth penetrates optical thin film layer of cutting groove by cutting groove.Compared with prior art, the utility model has the beneficial effects that: the utility model provides a kind of improvement stress type filtering chip architecture, by the way that cutting groove is arranged in the optical thin film layer to filter plate surface, the depth penetrates optical thin film layer of cutting groove, so that four side stress equilibrium of optical thin film layer, and then improve the face type on filter plate surface to meet the needs of utilization；According to needs are applied, the length and width of optical thin film layer is adjusted, improves the stress of optical thin film layer, the service performance of boostfiltering piece also facilitates subsequent filter plate assembling to fix.
Description
Technical field
The utility model relates to optical-fibre communications field, especially a kind of improvement stress type filtering chip architecture and wavelength-division multiplex
Device.
Background technique
Filter plate is made of that optical film is deposited on the surface of plastics or glass baseplate, to certain in (absorption) light wave of decaying
A little optical bands or accurately to select small range wave band light wave to pass through, and reflect (or absorption) fall other be not intended to by wave band.
By changing the parameters of film of filter plate, various spectral characteristics can be obtained.
One of plated film current main-stream of filter plate is exactly using ion beam sputtering deposition method.The technology is by vacuum ring
In border, ion is issued with ion source and becomes pencil through extraction, acceleration, focusing, with the target of this ion beam bombardment high vacuum
The atom sputtered is at a high speed impinged upon substrate surface, and deposited on the surface thereof by material.Sputter deposition process, that is,
The process that optical thin film is grown in substrate surface, during being somebody's turn to do, the adhesion between optical thin film layer and substrate is good, optical thin film
Layer density is high, pin hole is few, and optical thin film layer thickness controllability and reproducible.
One deficiency of the technology is exactly as the thickness of optical thin film increases, i.e. film layer number increases, and optical thin film is answered
Power is bigger, so that substrate surface generates certain face type deformation, to influence the optical property of product or be adhesively fixed
Performance.
Fig. 1 show filter plate external form ideally: 1 is substrate, and 2 be optical thin film layer ideally,
Optical Coatings Surface face type is plane.Fig. 2 is the filter plate external form under virtual condition: 1 is substrate, and 2a is under virtual condition
Optical thin film layer, Optical Coatings Surface face type is convex surface, and as stress becomes larger and height of projection is higher.
For the optical property of boostfiltering piece, while the optics in order to adapt to the needs of miniaturized application, on filter plate
Film thickness is up to 100 multilayers, and outer dimension is smaller and smaller.This makes the optically thin film surface face type deformation phenomenon of filter plate aobvious
It obtains more prominent.This deformation is so that product optical property is deteriorated, and also resulting in assembling fixed performance, there are some problems.
Utility model content
In view of the above-mentioned problems, the utility model provides a kind of improvement stress type filtering chip architecture, by filter plate
Cutting groove is arranged in the optical thin film layer on surface, so that four side stress equilibrium of optical thin film layer, and then improve the face on filter plate surface
Type, the service performance of boostfiltering piece also facilitate subsequent filter plate assembling to fix.
The technical solution adopted in the utility model are as follows:
A kind of improvement stress type filtering chip architecture, including matrix, matrix are equipped with optical thin film layer, set on optical thin film layer
There is at least one cutting groove, optical thin film layer is divided at least two free standing film areas, the depth penetrates of cutting groove by cutting groove
Optical thin film layer.
Preferably, the optical thin film layer is equipped with a cutting groove, and the cutting groove is in the middle part of optical thin film layer,
Optical thin film layer is divided into Liang Ge free standing film area by cutting groove.
Preferably, the cutting groove is 1 ~ 4.
Preferably, the width of the cutting groove is 0.1mm to 0.2mm.
Preferably, the cutting groove is vertical-type cutting groove.
The utility model also provides a kind of wavelength division multiplexer of application improvement stress type filtering chip architecture, including pedestal,
The leading flank of pedestal is equipped with antireflective optical film, and anti-reflective film is equipped with the entry port for injecting for incident ray, preceding
It is additionally provided on side for the high reflection optical film for being incident to the intracorporal light of base and being reflected, high reflection optical film to be in anti-
The trailing flank of the top of reflective foil, pedestal is equipped at least two improvement stress being arranged side by side for passing through for optical signal
Type filters chip architecture, and optical thin film layer is equipped with exit ports, each improvement stress type in each improvement stress type filtering chip architecture
Each free standing film area in filtering chip architecture is respectively equipped with exit ports.
Preferably, respectively improve stress type filtering chip architecture and be equipped with different optical thin film layers.
Compared with prior art, the utility model has the beneficial effects that: the utility model provides a kind of improvement stress type
Chip architecture is filtered, by the way that cutting groove, the depth penetrates optical thin film of cutting groove is arranged in the optical thin film layer to filter plate surface
Layer, so that four side stress equilibrium of optical thin film layer, and then improve the face type on filter plate surface to meet the needs of utilization；According to answering
With needs, the length and width of optical thin film layer is adjusted, improves the stress of optical thin film layer, the service performance of boostfiltering piece,
Subsequent filter plate assembling is facilitated to fix.
Detailed description of the invention
Fig. 1, for filter plate external form ideally；
Fig. 2 is the filter plate external form under virtual condition；
Fig. 3, for a kind of schematic diagram one for improving stress type and filtering chip architecture provided by the utility model；
Fig. 4, for a kind of schematic diagram two for improving stress type and filtering chip architecture provided by the utility model；
Fig. 5, for a kind of schematic diagram three for improving stress type and filtering chip architecture provided by the utility model；
Fig. 6 improves the schematic diagram that stress type filters the wavelength division multiplexer of chip architecture for application provided by the utility model.
Specific embodiment
Preferred embodiment provided by the utility model is illustrated with reference to the accompanying drawings.
Fig. 3 to Fig. 5, for a kind of preferred embodiment for improving stress type and filtering chip architecture provided by the utility model.It should
Improve stress type and filter chip architecture 100, including matrix 10, matrix 10 is equipped with optical thin film layer 20, sets on optical thin film layer 20
There is at least one cutting groove 30, cutting groove 30 divides optical thin film layer 20 at least two free standing film areas 21, cutting groove 30
Depth penetrates optical thin film layer 20, the i.e. depth of cutting groove 30 are greater than the thickness of optical thin film layer 20, the width of the cutting groove
For 0.1mm to 0.2mm, so that 20 4 side stress equilibrium of optical thin film layer, and then improve the face type on filter plate surface with full
The needs used enough.It is worth noting that, cutting groove 30 is vertical with 10 surface of matrix in cutting, it is ensured that vertically cut optically thin
Film layer 20, therefore cutting groove is all vertical-type cutting groove.
The quantity of the cutting groove can be 1 ~ 4: as shown in Figure 3 and Figure 4, optical thin film layer 20 is equipped with a cutting
Slot 30；As shown in figure 5, optical thin film layer 20 is equipped with three cutting grooves 30.It is as a preferred method, as shown in figure 3, described
Cutting groove 30 is in the middle part of optical thin film layer 20, and optical thin film layer is divided into Liang Ge free standing film area 21 by cutting groove 30；?
Can be as needed, using cutting groove 30 by the proportionally subregion of optical thin film layer 20, improves the stress of optical thin film layer in this way, mention
The service performance for rising filter plate also facilitates subsequent filter plate assembling to fix.
Matrix 10 have width edge a and length sides b, as a preferred method, as shown in figure 3, the cutting groove 30 with
The width edge a of matrix 10 is parallel；The cutting groove 30 can also be parallel with the length sides b of matrix 10, as shown in Figure 4.
As shown in fig. 6, the utility model also provides a kind of wavelength-division multiplex of application improvement stress type filtering chip architecture 100
Device, including pedestal 200, the leading flank of pedestal 200 are equipped with antireflective optical film 300, and anti-reflective film 300 is equipped with for feeding
The entry port 301 of light injection is penetrated, is additionally provided on leading flank for anti-to the height that the intracorporal light of base is reflected is incident to
Optical film 400 is penetrated, high reflection optical film 400 is in the top of antireflective optical film 300, and the trailing flank of pedestal 100 is equipped with extremely
The few two improvement stress type filtering chip architectures 100 being arranged side by side for being passed through for optical signal, it is each to improve stress type filter plate knot
Optical thin film layer is equipped with exit ports in structure, and each each free standing film area improved in stress type filtering chip architecture is respectively equipped with
Exit ports 2101.
Each stress type filtering chip architecture 100 that improves is equipped with different optical thin film layers, passes through for different optical signals.
By taking the wavelength division multiplexer that Fig. 6 is provided as an example, set that there are four the improvement stress types that are arranged side by side on the wavelength division multiplexer
It is as shown in Figure 4 to filter chip architecture 100(improvement stress type filtering chip architecture 100), the working principle of the wavelength division multiplexer is: light
Signal from 201 position of entry port, is incident on the antireflective optical film 300 of pedestal 200 at an angle, is transmitted into base
Seat 200, and improve the filtering that optical signal is realized in stress type filtering chip architecture at one, a kind of signal filtered out is from exit ports
2101 project, and other optical signals not filtered reflex to the high reflection optical film 400 of pedestal 200, through high reflection optical film
400, which reflex to next improvement stress type filtering chip architecture, carries out optical signal filtering, so repeats, compound optical signal is split
At four independent optical signals, to realize the wavelength-division function of product；Conversely, can be achieved to the multiplexing function of optical signal.
And in the production subassembly product improve stress type filtering chip architecture be to be designed by strip, the first half of product and
Latter half can be used as wavelength-division, multiplexing function respectively, realize and wavelength-division and multiplexing function can be achieved at the same time by a product.Due to
Improvement stress type filtering chip architecture is utilized, improves the face type of filter plate, and then improve the performance of subassembly product, is allowed to
It is able to satisfy with needs.
In conclusion the technical solution of the utility model sufficiently effective can realize above-mentioned purpose of utility model, and this
The structure and the principle of work and power of utility model have all adequately been verified in embodiment, can reach expected effect and mesh
, under the premise of without departing substantially from the principles of the present invention and essence, numerous variations can be made to the embodiment of utility model
Or modification.Therefore, the utility model includes all replacement contents being previously mentioned in range in patent claim, any
The made equivalence changes in present utility model application the scope of the patents, all within the scope of the patents of category this case application.
Claims (7)
1. a kind of improvement stress type filters chip architecture, which is characterized in that including matrix, matrix is equipped with optical thin film layer, optics
Film layer is equipped at least one cutting groove, and optical thin film layer is divided at least two free standing film areas by cutting groove, cutting groove
Depth penetrates optical thin film layer.
2. improvement stress type according to claim 1 filters chip architecture, it is characterised in that: the optical thin film layer is equipped with
One cutting groove, the cutting groove are in the middle part of optical thin film layer, and it is thin that optical thin film layer is divided into two independences by cutting groove
Film area.
3. improvement stress type according to claim 1 filters chip architecture, it is characterised in that: the cutting groove is 1 ~ 4.
4. improvement stress type according to claim 1 filters chip architecture, it is characterised in that: the width of the cutting groove is
0.1mm to 0.2mm.
5. improvement stress type according to claim 1 filters chip architecture, it is characterised in that: the cutting groove is cut for vertical-type
Cut slot.
6. a kind of using any wavelength division multiplexer for improving stress type filtering chip architecture of claim 1 to 5, feature exists
In, comprising: pedestal, the leading flank of pedestal are equipped with antireflective optical film, and anti-reflective film is equipped with for injecting for incident ray
Entry port, be additionally provided on leading flank for the high reflection optical film for being incident to the intracorporal light of base and being reflected, it is high anti-
The top that optical film is in antireflective optical film is penetrated, the trailing flank of pedestal is equipped at least two and is arranged side by side for for optical signal
The improvement stress type filtering chip architecture passed through, each improvement stress type filter optical thin film layer in chip architecture and are equipped with exit ports,
Each each free standing film area improved in stress type filtering chip architecture is respectively equipped with exit ports.
7. wavelength division multiplexer according to claim 6, it is characterised in that: each stress type filtering chip architecture that improves is equipped with not
Same optical thin film layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201920063605.3U CN209215617U (en) | 2019-01-15 | 2019-01-15 | A kind of improvement stress type filtering chip architecture and wavelength division multiplexer |
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| CN201920063605.3U CN209215617U (en) | 2019-01-15 | 2019-01-15 | A kind of improvement stress type filtering chip architecture and wavelength division multiplexer |
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| CN209215617U true CN209215617U (en) | 2019-08-06 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109445010A (en) * | 2019-01-15 | 2019-03-08 | 北极光电(深圳)有限公司 | A kind of improvement stress type filtering chip architecture and wavelength division multiplexer |
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2019
- 2019-01-15 CN CN201920063605.3U patent/CN209215617U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109445010A (en) * | 2019-01-15 | 2019-03-08 | 北极光电(深圳)有限公司 | A kind of improvement stress type filtering chip architecture and wavelength division multiplexer |
| CN109445010B (en) * | 2019-01-15 | 2024-03-29 | 北极光电(深圳)有限公司 | Improved stress type filter structure and wavelength division multiplexer |
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