CN111883433A - 一种半导体晶片封装及其形成方法 - Google Patents
一种半导体晶片封装及其形成方法 Download PDFInfo
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- CN111883433A CN111883433A CN202010636833.2A CN202010636833A CN111883433A CN 111883433 A CN111883433 A CN 111883433A CN 202010636833 A CN202010636833 A CN 202010636833A CN 111883433 A CN111883433 A CN 111883433A
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- semiconductor wafer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 108
- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000004806 packaging method and process Methods 0.000 claims abstract description 30
- 239000011347 resin Substances 0.000 claims abstract description 22
- 229920005989 resin Polymers 0.000 claims abstract description 22
- 239000004033 plastic Substances 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 238000000465 moulding Methods 0.000 claims abstract description 6
- 239000004020 conductor Substances 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 13
- 238000005538 encapsulation Methods 0.000 claims description 11
- 238000001312 dry etching Methods 0.000 claims description 9
- 238000001039 wet etching Methods 0.000 claims description 9
- 239000004925 Acrylic resin Substances 0.000 claims description 8
- 229920000178 Acrylic resin Polymers 0.000 claims description 8
- 239000003822 epoxy resin Substances 0.000 claims description 8
- 229920000647 polyepoxide Polymers 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- 239000003921 oil Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 60
- 238000004519 manufacturing process Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010636833.2A CN111883433B (zh) | 2020-07-03 | 2020-07-03 | 一种半导体晶片封装及其形成方法 |
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Application Number | Priority Date | Filing Date | Title |
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CN202010636833.2A CN111883433B (zh) | 2020-07-03 | 2020-07-03 | 一种半导体晶片封装及其形成方法 |
Publications (2)
Publication Number | Publication Date |
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CN111883433A true CN111883433A (zh) | 2020-11-03 |
CN111883433B CN111883433B (zh) | 2022-03-22 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114792634A (zh) * | 2022-06-27 | 2022-07-26 | 威海市泓淋电力技术股份有限公司 | 一种柔性封装结构及其制造方法 |
WO2022205737A1 (zh) * | 2021-03-30 | 2022-10-06 | 长鑫存储技术有限公司 | 半导体结构的制备方法及半导体结构 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2749231Y (zh) * | 2004-06-01 | 2005-12-28 | 成都市依迈电子化工实业有限公司 | 复合导电密封衬垫 |
CN102157397A (zh) * | 2010-01-18 | 2011-08-17 | 半导体元件工业有限责任公司 | 形成电磁保护半导体管芯的方法及半导体管芯 |
CN102683311A (zh) * | 2011-03-10 | 2012-09-19 | 精材科技股份有限公司 | 晶片封装体及其形成方法 |
CN202705026U (zh) * | 2011-05-23 | 2013-01-30 | 埃普科斯股份有限公司 | 具有mems器件的装置 |
CN103904048A (zh) * | 2012-12-27 | 2014-07-02 | 欣兴电子股份有限公司 | 内置式芯片封装结构 |
KR101741648B1 (ko) * | 2016-01-22 | 2017-05-31 | 하나 마이크론(주) | 전자파 차폐 수단을 갖는 반도체 패키지 및 그 제조 방법 |
CN110970399A (zh) * | 2018-10-01 | 2020-04-07 | 三星电子株式会社 | 半导体封装件 |
CN210467825U (zh) * | 2019-10-31 | 2020-05-05 | 互创(东莞)电子科技有限公司 | 一种具有抗干扰结构的贴片式二极管 |
-
2020
- 2020-07-03 CN CN202010636833.2A patent/CN111883433B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2749231Y (zh) * | 2004-06-01 | 2005-12-28 | 成都市依迈电子化工实业有限公司 | 复合导电密封衬垫 |
CN102157397A (zh) * | 2010-01-18 | 2011-08-17 | 半导体元件工业有限责任公司 | 形成电磁保护半导体管芯的方法及半导体管芯 |
CN102683311A (zh) * | 2011-03-10 | 2012-09-19 | 精材科技股份有限公司 | 晶片封装体及其形成方法 |
CN202705026U (zh) * | 2011-05-23 | 2013-01-30 | 埃普科斯股份有限公司 | 具有mems器件的装置 |
CN103904048A (zh) * | 2012-12-27 | 2014-07-02 | 欣兴电子股份有限公司 | 内置式芯片封装结构 |
KR101741648B1 (ko) * | 2016-01-22 | 2017-05-31 | 하나 마이크론(주) | 전자파 차폐 수단을 갖는 반도체 패키지 및 그 제조 방법 |
CN110970399A (zh) * | 2018-10-01 | 2020-04-07 | 三星电子株式会社 | 半导体封装件 |
CN210467825U (zh) * | 2019-10-31 | 2020-05-05 | 互创(东莞)电子科技有限公司 | 一种具有抗干扰结构的贴片式二极管 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022205737A1 (zh) * | 2021-03-30 | 2022-10-06 | 长鑫存储技术有限公司 | 半导体结构的制备方法及半导体结构 |
CN114792634A (zh) * | 2022-06-27 | 2022-07-26 | 威海市泓淋电力技术股份有限公司 | 一种柔性封装结构及其制造方法 |
CN114792634B (zh) * | 2022-06-27 | 2022-08-26 | 威海市泓淋电力技术股份有限公司 | 一种柔性封装结构及其制造方法 |
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Effective date of registration: 20221202 Address after: 215600 Xu Caifen, No. 3, Tongji Road, Jingang town, Zhangjiagang City, Suzhou City, Jiangsu Province Patentee after: ZHANGJIAGANG SHANMU NEW MATERIAL TECHNOLOGY DEVELOPMENT Co.,Ltd. Address before: 215600 Xu Caifen, No. 3, Tongji Road, Jingang town, Zhangjiagang City, Suzhou City, Jiangsu Province Patentee before: Xu Caifen |
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Effective date of registration: 20240116 Address after: 523000, Room 101, No.1 Fujin West Road, Huangcaolang, Dalang Town, Dongguan City, Guangdong Province 453000 Patentee after: DONGGUAN BEST ALLOYS CO.,LTD. Address before: 215600 Xu Caifen, No. 3, Tongji Road, Jingang town, Zhangjiagang City, Suzhou City, Jiangsu Province Patentee before: ZHANGJIAGANG SHANMU NEW MATERIAL TECHNOLOGY DEVELOPMENT Co.,Ltd. |
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